CN106299077A - Led封装结构及其制作方法 - Google Patents
Led封装结构及其制作方法 Download PDFInfo
- Publication number
- CN106299077A CN106299077A CN201510274079.1A CN201510274079A CN106299077A CN 106299077 A CN106299077 A CN 106299077A CN 201510274079 A CN201510274079 A CN 201510274079A CN 106299077 A CN106299077 A CN 106299077A
- Authority
- CN
- China
- Prior art keywords
- groove
- conductive pattern
- loading plate
- encapsulation structure
- led encapsulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title description 2
- 238000011068 loading method Methods 0.000 claims abstract description 65
- 230000004888 barrier function Effects 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 238000007747 plating Methods 0.000 claims description 66
- 239000000463 material Substances 0.000 claims description 17
- 230000005855 radiation Effects 0.000 claims description 16
- 239000005022 packaging material Substances 0.000 claims description 10
- 239000004033 plastic Substances 0.000 claims description 10
- 239000000084 colloidal system Substances 0.000 claims description 9
- 238000012856 packing Methods 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 210000002421 cell wall Anatomy 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006336 epoxy molding compound Polymers 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920006375 polyphtalamide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (20)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510274079.1A CN106299077B (zh) | 2015-05-26 | 2015-05-26 | Led封装结构的制作方法 |
TW104119875A TWI606617B (zh) | 2015-05-26 | 2015-06-18 | Led封裝結構及其製作方法 |
US14/864,585 US9548427B2 (en) | 2015-05-26 | 2015-09-24 | Package structure and method for manufacturing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510274079.1A CN106299077B (zh) | 2015-05-26 | 2015-05-26 | Led封装结构的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106299077A true CN106299077A (zh) | 2017-01-04 |
CN106299077B CN106299077B (zh) | 2019-01-25 |
Family
ID=57399120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510274079.1A Active CN106299077B (zh) | 2015-05-26 | 2015-05-26 | Led封装结构的制作方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9548427B2 (zh) |
CN (1) | CN106299077B (zh) |
TW (1) | TWI606617B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108550681A (zh) * | 2018-04-26 | 2018-09-18 | 孙爱芬 | 一种led芯片cob封装结构 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230139147A (ko) * | 2022-03-25 | 2023-10-05 | 현대모비스 주식회사 | 엘이디 모듈 및 이를 포함하는 차량 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6507049B1 (en) * | 2000-09-01 | 2003-01-14 | General Electric Company | Encapsulants for solid state devices |
US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
CN1521863A (zh) * | 2003-02-10 | 2004-08-18 | 光磊科技股份有限公司 | 发光二极管的封装装置 |
CN101714596A (zh) * | 2008-09-29 | 2010-05-26 | 精工电子有限公司 | 发光器件及其制造方法 |
CN101946407A (zh) * | 2008-02-18 | 2011-01-12 | 精工电子有限公司 | 压电振动器的制造方法、压电振动器、振荡器、电子设备及电波钟 |
CN102136544A (zh) * | 2010-01-25 | 2011-07-27 | 精工电子有限公司 | 发光器件及其制造方法 |
CN104640377A (zh) * | 2013-11-12 | 2015-05-20 | 精工爱普生株式会社 | 配线基板及其制造方法、封装、电子装置及设备、移动体 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3261613B2 (ja) * | 1997-12-08 | 2002-03-04 | ローム株式会社 | 表示装置、およびこれが実装されたマザーボード |
KR101241650B1 (ko) * | 2005-10-19 | 2013-03-08 | 엘지이노텍 주식회사 | 엘이디 패키지 |
US20070126020A1 (en) * | 2005-12-03 | 2007-06-07 | Cheng Lin | High-power LED chip packaging structure and fabrication method thereof |
JP4926481B2 (ja) * | 2006-01-26 | 2012-05-09 | 共立エレックス株式会社 | 発光ダイオード用パッケージ及び発光ダイオード |
CN102804427A (zh) * | 2009-06-23 | 2012-11-28 | 旭硝子株式会社 | 发光装置 |
TW201126765A (en) * | 2010-01-29 | 2011-08-01 | Advanced Optoelectronic Tech | Package structure of compound semiconductor and manufacturing method thereof |
-
2015
- 2015-05-26 CN CN201510274079.1A patent/CN106299077B/zh active Active
- 2015-06-18 TW TW104119875A patent/TWI606617B/zh active
- 2015-09-24 US US14/864,585 patent/US9548427B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6507049B1 (en) * | 2000-09-01 | 2003-01-14 | General Electric Company | Encapsulants for solid state devices |
US6531328B1 (en) * | 2001-10-11 | 2003-03-11 | Solidlite Corporation | Packaging of light-emitting diode |
CN1521863A (zh) * | 2003-02-10 | 2004-08-18 | 光磊科技股份有限公司 | 发光二极管的封装装置 |
CN101946407A (zh) * | 2008-02-18 | 2011-01-12 | 精工电子有限公司 | 压电振动器的制造方法、压电振动器、振荡器、电子设备及电波钟 |
CN101714596A (zh) * | 2008-09-29 | 2010-05-26 | 精工电子有限公司 | 发光器件及其制造方法 |
CN102136544A (zh) * | 2010-01-25 | 2011-07-27 | 精工电子有限公司 | 发光器件及其制造方法 |
CN104640377A (zh) * | 2013-11-12 | 2015-05-20 | 精工爱普生株式会社 | 配线基板及其制造方法、封装、电子装置及设备、移动体 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108550681A (zh) * | 2018-04-26 | 2018-09-18 | 孙爱芬 | 一种led芯片cob封装结构 |
CN108550681B (zh) * | 2018-04-26 | 2019-10-18 | 广州市赛普电子科技有限公司 | 一种led芯片cob封装结构 |
Also Published As
Publication number | Publication date |
---|---|
CN106299077B (zh) | 2019-01-25 |
US9548427B2 (en) | 2017-01-17 |
TW201642499A (zh) | 2016-12-01 |
TWI606617B (zh) | 2017-11-21 |
US20160351753A1 (en) | 2016-12-01 |
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Legal Events
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---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230922 Address after: 066004 No. 18-2, Tengfei Road, Qinhuangdao Economic and Technological Development Zone, Hebei Province Patentee after: Liding semiconductor technology Qinhuangdao Co.,Ltd. Patentee after: Zhen Ding Technology Co.,Ltd. Address before: No.18, Tengfei Road, Qinhuangdao Economic and Technological Development Zone, Hebei Province 066004 Patentee before: Qi Ding Technology Qinhuangdao Co.,Ltd. Patentee before: Zhen Ding Technology Co.,Ltd. |