CN106082106B - A kind of broadband non-refrigerated infrared detector and preparation method thereof - Google Patents
A kind of broadband non-refrigerated infrared detector and preparation method thereof Download PDFInfo
- Publication number
- CN106082106B CN106082106B CN201610422054.6A CN201610422054A CN106082106B CN 106082106 B CN106082106 B CN 106082106B CN 201610422054 A CN201610422054 A CN 201610422054A CN 106082106 B CN106082106 B CN 106082106B
- Authority
- CN
- China
- Prior art keywords
- layer
- film
- thickness
- electrode
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 84
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 284
- 239000010408 film Substances 0.000 claims description 106
- 238000005530 etching Methods 0.000 claims description 45
- 238000005240 physical vapour deposition Methods 0.000 claims description 45
- 238000000151 deposition Methods 0.000 claims description 33
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 29
- 230000008021 deposition Effects 0.000 claims description 21
- 238000010884 ion-beam technique Methods 0.000 claims description 17
- 238000001259 photo etching Methods 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 12
- 238000000206 photolithography Methods 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 12
- 238000010521 absorption reaction Methods 0.000 claims description 11
- 238000001020 plasma etching Methods 0.000 claims description 11
- 238000012544 monitoring process Methods 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 6
- 239000011253 protective coating Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000000992 sputter etching Methods 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 9
- 238000013461 design Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 7
- 229910001120 nichrome Inorganic materials 0.000 description 7
- 229910010037 TiAlN Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 238000000701 chemical imaging Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003331 infrared imaging Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0207—Bolometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention discloses a kind of broadband non-refrigerated infrared detector and preparation method thereof, Semiconductor substrate comprising reading circuit and a detector with the first micro-bridge structure, the detector is electrically connected with the reading circuit formation of the Semiconductor substrate, first micro-bridge structure is provided with the second micro-bridge structure, and second micro-bridge structure is provided with the 3rd micro-bridge structure；Using this method, the detection wave band of infrared detector can be widened, so as to extend the application field of infrared detector.Not only technique is simple, and cost is low, and will not increase the design difficulty of reading circuit.
Description
Technical field
The invention belongs to the MEMS (MEMS in semiconductor technology:Micro-electromechanical
Systems a kind of) technique manufacture field, and in particular to broadband non-refrigerated infrared detector and preparation method thereof.
Background technology
Uncooled infrared detection technology is perceived and turned without the infra-red radiation (IR) of refrigeration system object to external world
The technology that electric signal is exported after processing in display terminal is melted into, national defence, space flight, medical science, production monitoring etc. is can be widely applied to
Various fields.Non-refrigerated infrared focal plane probe can be worked due to it under room temperature state, and with light weight, volume
The advantages of small, long lifespan, cost are low, power is small, startup is fast and stability is good, meets civilian infrared system and part is military red
External system is to Long Wave Infrared Probe in the urgent need to developing in recent years rapidly, just towards highly sensitive, wide spectrum, high-resolution
Rate, low-power consumption, miniaturization and intelligentized direction are developed.Non-refrigerated infrared detector mainly includes bolometer, pyroelectricity
With thermopile detector etc., wherein micro-metering bolometer (Micro-bolometer) infrared acquisition based on MEMS manufacturing process
Device is high due to its speed of response, and manufacture craft is simple and compatible with integrated circuit fabrication process, with relatively low cross-talk and relatively low
1/f noise, higher frame speed works without chopper, the advantages of being easy to large-scale production, is non-refrigerated infrared detector
One of mainstream technology.
Micro-metering bolometer (Micro-bolometer) be based on the material with sensitive characteristic when temperature changes
A kind of non-refrigeration infrared detector that resistance value occurs corresponding change and manufactured.Heat during work to being supported on heat insulating construction
Quick resistance two ends apply fixed bias voltage or current source, and temperature change caused by incident IR radiation causes thermistor to hinder
Value reduces, so that electric current, voltage change, and by reading circuit (ROIC:Readout Integrated Circuits)
Read the change of electric signal.There must be higher temperature-coefficient of electrical resistance (TCR as the material of thermistor:Temperature
Coefficient of Resistance), relatively low 1/f noise, appropriate resistance value and stable electrical property, and be easy to
Preparation etc. is required.The infrared or terahertz emission detection process of micro-metering bolometer, mainly passes through hanging micro-bridge structure
Come what is completed, so the structure manufacture of micro-metering bolometer is the key factor for determining its performance.
The unit of traditional non-refrigerate infrared focal plane array seeker generally uses cantilever beam micro-bridge structure, and it utilizes sacrificial
Thermo-sensitive material in domestic animal layer release process formation bridge supporting construction, support platform is connected by microbridge with substrate reading circuit.It is sacrificial
Domestic animal thickness degree is the determination of optical resonator (cavity) height：Cavity, can be with booster in addition to playing heat insulation effect
Absorption (absorption coefficient may be up to 90%) of the part to infra-red radiation or terahertz emission, and positioning devices are to infrared or terahertz
The wave band hereby absorbed.
At present, non refrigerating infrared imaging wave band is concentrated mainly on long wave infrared region (8 μm~14 μm), and imaging band position
It is less in the product of medium-wave infrared wave band (3 μm~5 μm).Long-wave band infrared imagery technique is ripe, sensitivity is high, and smog is worn
Saturating ability is stronger, can provide most of target excellent imaging effect；Medium-wave infrared imaging background radiation interference is small, wet
Visual range is better than LONG WAVE INFRARED in the larger environment of degree, there is important application in terms of missile warning.So, develop broadband
Infrared detector is highly desirable to.
Foreign countries are in terms of infrared multi-spectral imaging, and U.S.'s Thunder God once applied for a patent (United States Patent (USP)：US 7629582B2).Should
Patent using technical scheme be the photon type detector using by the way of photon type detector and thermosensitive type detector hybrid integrated
As short-wave infrared detector, and thermosensitive type detector is used as Long Wave Infrared Probe.Although the program can realize broadband
Infrared acquisition, but be due to that, using the superposition detection of two kinds of devices, this method can cause that technology difficulty is big, cost is high, read
Complex circuit designs.
The country is in terms of infrared multi-spectral imaging, and No.13 Inst., Chinese Electronic Science ＆ Technology Group Co applies for a patent (one
Plant MEMS non-refrigerated two-band infrared detectors and its preparation, application number：200910228000).The patent is used by regulation
The mode of optical resonance cavity length realizes dual-waveband imaging.This method principle is simple, easily design, but is due to need to increase electricity
Road adjusts resonator change in elevation, and not only technology difficulty is big, also increases the difficulty of reading circuit design.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of technique simply, and cost is low, and will not increase reading electricity
The broadband non-refrigerated infrared detector of the design difficulty on road.
In order to solve the above technical problems, the technical scheme is that：
A kind of broadband non-refrigerated infrared detector, the Semiconductor substrate comprising reading circuit and one has the first microbridge
The detector of structure, the detector is electrically connected with the reading circuit formation of the Semiconductor substrate, first micro-bridge structure
The second micro-bridge structure is provided with, second micro-bridge structure is provided with the 3rd micro-bridge structure.
As preferred technical scheme, second micro-bridge structure includes setting on the second supporting layer, second supporting layer
There is the second absorbed layer；
3rd micro-bridge structure includes the 3rd supporting layer, and the 3rd supporting layer is provided with the 3rd absorbed layer.
The present invention also provides a kind of method for preparing the broadband non-refrigerated infrared detector.
In order to solve the above technical problems, the technical scheme is that：
A kind of method for preparing broadband non-refrigerated infrared detector, including step：
1) metallic reflector, film thickness 0.05~0.40 are made in the Semiconductor substrate of manufactured reading circuit
μm；After etching reflecting layer one layer of dielectric is deposited on reflection layer pattern；Then the preparation of sacrifice layer is carried out；In sacrifice layer
Upper utilization PECVD deposition low stresses Si3N4Film is used as supporting layer, 0.10~0.30 μm of supporting layer thickness；
2) partial sacrificial layer and the dielectric of bottom are etched away using the method for photoetching and RIE etch, exposed following
Metal electrode, formed Via through holes, then using PVD deposition electrode, typically using Ti, NiCr, TiAlN thin film, thicknessUsing the method for photoetching and etching, electrode pattern is etched, recycles PECVD to deposit one layer of low stress
Si3N4Dielectric layer, thickness
3) electrode layer and heat-sensitive layer, the heat-sensitive layer materials'use VOx films, using ion beam depositing or physics gas are prepared
The mutually method growth of deposition, film thickness
4) sacrifice layer of the second Rotating fields is prepared in the structure that etching terminates, sacrificial layer thickness is 0.5 μm~3 μm, profit
With PECVD deposition low stresses Si3N4Film is used as supporting layer, 0.10~0.30 μm of supporting layer thickness；
5) one layer of absorption layer film is deposited using PECVD or PVD methods, such as Ti, TiN metal or nonmetallic, film is thick
Spend and beThen layer film and Si are graphically absorbed using the method for Lithography Etching3N4Film, forms second layer knot
Structure；
6) after the preparation for completing the second Rotating fields, the sacrifice layer of third layer structure is made, sacrificial layer thickness is 0.5 μm~3 μ
M, low stress Si is deposited using PECVD3N4Film is as supporting layer, 0.10~0.30 μm of supporting layer thickness, recycle PECVD or
PVD methods deposit one layer of absorption layer film, such as Ti, TiN metal or nonmetallic, and film thickness isThen light
Carve graphical absorption layer film and Si3N4Film, forms third layer structure；
8) release of sacrifice layer, completion absorbed layer and Si3N4The device of film etching is put into resist remover or ion etching
In the equipment such as machine, plasma ashing, releasing sacrificial layer forms final micro-bridge structure.
As preferred technical scheme, the step 1) described in dielectric use Si3N4Film or SiO2 are thin
Film, 0.02~0.30 μm of film thickness.
Be used as preferred technical scheme, the step 1), step 4) or step 6) described in sacrifice layer from amorphous carbon,
Non-crystalline silicon, heatproof photoresist.
As preferred technical scheme, the step 3) prepare electrode layer and temperature-sensitive layer method is：In supporting layer Si3N4On
Electrode layer and electrode passivation layer are prepared using PVD and by photolithography patterning, then using ion beam depositing or physical vapour deposition (PVD)
Method thermosensitive film layer VOx films are grown on patterned electrode layer protective layer and heat-sensitive layer protective layer and pass through photoetching figure
Shape.
Be used as it is further preferably, the step 3) prepare electrode layer and heat-sensitive layer specific method is：Utilize PVD deposition electricity
Pole, typically using Ti, NiCr, TiAlN thin film, thicknessUsing the method for photoetching and etching, electrode figure is etched
Shape, one layer of low stress Si is deposited using PECVD3N4Dielectric layer, thicknessUsing the method for Lithography Etching in electrode
Partial protection layer Si is etched away on (Ti, TiN, NiCr) protective layer3N4, the contact hole of electrode and heat-sensitive layer is formed, SF is used6、
CHF3、O2Or CF4、O2Deng gas as etching gas, thickness of electrode is relatively thin, it is necessary to use endpoint monitoring EPD (End Point
Detection) it is etched reaction and terminates monitoring, in case by electrode, all etching is clean；Etch behind Contact holes, immediately
Deposit thermosensitive film, heat-sensitive layer materials'use VOx films, using the side of ion beam depositing (IBD) or physical vapour deposition (PVD) (PVD)
Method grows, film thicknessOne layer of V/V can be first deposited when deposition VOx2O5/ V films, thickness isAs transition zone, VOx etching can use the side of ion beam etching (IBE) or reactive ion etching (RIE)
Method, is completed after thermosensitive film etching, and low stress Si is deposited using PECVD method3N4Thinfilm protective coating, thickness isThen protective layer (Passivation) figure is lithographically formed, each layer Si is etched3N4Film, is releasing for sacrifice layer
Put and prepare.
As the improvement to above-mentioned technical proposal, one layer of V/V is first deposited when deposition VOx2O5/ V films, thickness isAs transition zone.
As preferred technical scheme, the etching of the VOx films can use ion beam etching or reactive ion etching
Method.
It is used as another preferred technical scheme, the step 3) prepare electrode layer and heat-sensitive layer specific method is：First in branch
Support layer Si3N4Upper use ion beam depositing (IBD) or physical vapour deposition (PVD) (PVD) method growth thermosensitive film layer VOx films and
VOx thinfilm protective coatings and by photolithography patterning, recycle PVD to prepare electrode layer and electricity on patterned heat-sensitive layer protective layer
Pole passivation layer and photolithography patterning.
Advantages of the present invention：
1. be further added by two layers of absorbent layer structure in the structure of individual layer, can by adjust the spacing between each Rotating fields with
And planform is come the absorptivity of infrared waves in being lifted.Traditional detection wave band is extended to 3~14 μm, expansion from 8~14 μm
The application field of detector, simulation result is as shown in Figure 10.
2. third layer micro-structural is manufactured in second layer micro-structural.Because the material of second and third layer structure is all insulation
Body, and play a part of be lifting absorptivity.So, difficulty of the third layer structure in manufacturing process is just reduced, i.e.,
Make third layer structure collapse or with second layer form touch, can also play lifting absorptivity without reduce detector
Overall performance.
3. using this method, not only technique is simple, and cost is low, and will not increase the design difficulty of reading circuit.
By adopting the above-described technical solution, a kind of broadband non-refrigerated infrared detector and preparation method thereof, comprising
The Semiconductor substrate of reading circuit and a detector with the first microbridge supporting construction, the detector are served as a contrast with the semiconductor
The reading circuit formation electrical connection at bottom, first micro-bridge structure is provided with the second micro-bridge structure, second micro-bridge structure
Provided with the 3rd micro-bridge structure；The structure is to continue to make two layers of hanging structure in the microbridge supporting construction of conventional detectors,
One layer of absorbent layer structure is first made on traditional micro-bridge structure, third layer hanging structure conduct is then made on the second Rotating fields again
Absorbed layer, not only 8-14 μm long to wavelength have more than 90% absorptivity, and can also in 3-5 μm of absorptivity
Significantly lifted very much, traditional detection wave band is extended to 3-14 μm from 8-14 μm, the application field of detector is extended；The
Third layer micro-bridge structure is manufactured on two layers of micro-bridge structure, because the material of second and third layer structure is all insulator, and is risen
To be lifted absorptivity effect, so, difficulty of the third layer structure in manufacturing process is just reduced, even if third layer knot
Structure collapse or with second layer form touch, can also play lifting absorptivity without reduce detector globality
Energy；Using this method, not only technique is simple, and cost is low, and will not increase the design difficulty of reading circuit.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, without having to pay creative labor, may be used also
To obtain other accompanying drawings according to these accompanying drawings.
Fig. 1 is reflecting layer of the present invention, sacrifice layer, supporting layer formation schematic diagram；
Fig. 2 is that the present invention is electrically connected to form schematic diagram；
Fig. 3 is that electrode layer of the present invention, electrode passivation layer and contact holes form schematic diagram；
Fig. 4 is single layer structure formation schematic diagram of the present invention；
Fig. 5 is the second Rotating fields sacrifice layer of the invention and supporting layer formation schematic diagram；
Fig. 6 is the second Rotating fields formation schematic diagram of the invention；
Fig. 7 is third layer structure formation schematic diagram of the present invention；
Fig. 8 is broadband infrared detector structure schematic diagram of the present invention；
Fig. 9 is broadband infrared detector structure schematic three dimensional views of the present invention；
Figure 10 is detector detection simulation result schematic diagram of the present invention.
In figure：1- Semiconductor substrates；2- reflecting layer；3- dielectrics；4- sacrifice layers；5- supporting layers；6- electrode layers；7- electricity
Pole passivation layer；8- heat-sensitive layers；9- heat-sensitive layer protective layers；10- second layer supporting layers；11- second layer absorbed layers；12- third layer branch
Support layer；13- third layer absorbed layers.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Embodiment one：
As shown in Figures 1 to 9, a kind of broadband non-refrigerated infrared detector, the Semiconductor substrate 1 comprising reading circuit
With a detector with the first micro-bridge structure, the detector is electrically connected with the reading circuit formation of the Semiconductor substrate 1,
First micro-bridge structure is provided with the second micro-bridge structure, and second micro-bridge structure is provided with the 3rd micro-bridge structure.
Second micro-bridge structure includes the second supporting layer 10, and second supporting layer 10 is provided with the second absorbed layer 11；
3rd micro-bridge structure includes the 3rd supporting layer 12, and the 3rd supporting layer 12 is provided with the 3rd absorbed layer 13.
A kind of method for preparing broadband non-refrigerated infrared detector, including step：
1) the making metallic reflector 2 in the Semiconductor substrate 1 of manufactured reading circuit, film thickness 0.05~
0.40μm；Etch reflecting layer 2 and deposit one layer of dielectric 3 on reflection layer pattern afterwards；Then the preparation of sacrifice layer 4 is carried out,
Utilize PECVD deposition low stresses Si3N4Film is used as supporting layer 5,0.10~0.30 μm of 5 thickness of supporting layer；
2) dielectric 3 of the bottom of sacrifice layer 4 is etched away using the method for photoetching and RIE etch, exposes following metal
Electrode, forms Via through holes, using PVD deposition electrode, typically using Ti, NiCr, TiAlN thin film, thicknessUtilize
Photoetching and the method for etching, etch electrode pattern, and one layer of low stress Si is deposited using PECVD3N4Dielectric layer, thickness
3) electrode layer 6 and heat-sensitive layer 8, the materials'use VOx films of heat-sensitive layer 8, using ion beam depositing or thing are prepared
The method growth of physical vapor deposition, film thickness
4) sacrifice layer 4 of the second Rotating fields is prepared in the structure that etching terminates, the thickness of sacrifice layer 4 is 0.5 μm~3 μm,
Utilize PECVD deposition low stresses Si3N4Film is used as supporting layer 5,0.10~0.30 μm of 5 thickness of supporting layer；
5) one layer of absorption layer film is deposited using PECVD or PVD methods, such as Ti, TiN metal or nonmetallic, film is thick
Spend and beThen the graphical film of second absorbed layer 11 of method and Si of Lithography Etching are used3N4Film, forms the
Two-layer structure；
6) complete the second Rotating fields preparation after, make third layer structure sacrifice layer 4, the thickness of sacrifice layer 4 be 0.5 μm~
3 μm, low stress Si is deposited using PECVD3N4Film is recycled as supporting layer 5,0.10~0.30 μm of 5 thickness of supporting layer
PECVD or PVD methods deposit one layer of absorption layer film, such as Ti, TiN metal or nonmetallic, and film thickness isThen the film of the 3rd absorbed layer of photolithography patterning 13 and Si3N4Film, forms third layer structure；
8) release of sacrifice layer 4, completion absorbed layer 4 and Si3N4The device of film etching is put into resist remover or ion etching
In the equipment such as machine, plasma ashing, releasing sacrificial layer 4 forms final micro-bridge structure.
The step 1) described in dielectric 3 use Si3N4Film or SiO2Film, film thickness 0.02~
0.30μm。
The step 1), step 4) or step 6) described in sacrifice layer 4 from amorphous carbon, non-crystalline silicon, heatproof photoresist.
The step 3) prepare electrode layer 6 and the method for heat-sensitive layer 8 is：In supporting layer 5Si3N4Upper utilization PVD prepares electrode layer
6 and electrode passivation layer 7 and by photolithography patterning, then using ion beam depositing or physical vapour deposition (PVD) method patterned
Thermosensitive film layer VOx films and heat-sensitive layer protective layer 9 are grown on electrode layer passivation layer 7 and passes through photolithography patterning.
The step 3) prepare electrode layer 6 and the specific method of heat-sensitive layer 8 is：Using PVD deposition electrode, typically using Ti,
NiCr, TiAlN thin film, thicknessUsing the method for photoetching and etching, electrode pattern is etched, it is heavy using PECVD
One layer of low stress Si of product3N4Dielectric layer, thicknessUsing the method for Lithography Etching at electrode (Ti, TiN, NiCr)
Partial protection layer Si is etched away on protective layer3N4, the contact hole of electrode and heat-sensitive layer 8 is formed, SF is used6、CHF3、O2Or CF4、O2
Deng gas as etching gas, thickness of electrode is relatively thin, it is necessary to be carried out using endpoint monitoring EPD (End Point Detection)
Etching reaction terminates monitoring, in case by electrode, all etching is clean；Etch behind Contact holes, thermosensitive film is deposited immediately, heat
The materials'use VOx films of photosensitive layer 8, are grown, film is thick using the method for ion beam depositing (IBD) or physical vapour deposition (PVD) (PVD)
DegreeOne layer of V/V can be first deposited when deposition VOx2O5/ V films, thickness isAs transition
Layer, the method that VOx etching can use ion beam etching (IBE) or reactive ion etching (RIE) completes thermosensitive film etching
Afterwards, low stress Si is deposited using PECVD method3N4Thinfilm protective coating, thickness isThen it is lithographically formed electrode
Passivation layer 7 (Passivation) figure, etches each layer Si3N4Film, is that the release of sacrifice layer 4 is prepared.
One layer of V/V is first deposited when deposition VOx2O5/ V films, thickness isAs transition zone.
The method that the etching of the VOx films can use ion beam etching or reactive ion etching.
Embodiment two：
As shown in Figure 1, Figure 2, shown in Fig. 5, Fig. 6, Fig. 7, Fig. 8 and Fig. 9, a kind of broadband non-refrigerated infrared detector, comprising
The Semiconductor substrate 1 and one of reading circuit has the detector of the first micro-bridge structure, the detector and the Semiconductor substrate 1
Reading circuit formation electrical connection, first micro-bridge structure is provided with the second micro-bridge structure, sets on second micro-bridge structure
There is the 3rd micro-bridge structure.
Second micro-bridge structure includes the second supporting layer 10, and second supporting layer 10 is provided with the second absorbed layer 11；
3rd micro-bridge structure includes the 3rd supporting layer 12, and the 3rd supporting layer 12 is provided with the 3rd absorbed layer 13.
A kind of method for preparing broadband non-refrigerated infrared detector, including step：
1) the making metallic reflector 2 in the Semiconductor substrate 1 of manufactured reading circuit, film thickness 0.05~
0.40μm；After etching reflecting layer one layer of dielectric 3 is deposited on reflection layer pattern；Then the preparation of sacrifice layer 4, profit are carried out
With PECVD deposition low stresses Si3N4Film is used as supporting layer 5,0.10~0.30 μm of 5 thickness of supporting layer；
2) dielectric 3 of the bottom of sacrifice layer 4 is etched away using the method for photoetching and RIE etch, exposes following metal
Electrode, forms Via through holes, using PVD deposition electrode, typically using Ti, NiCr, TiAlN thin film, thicknessUtilize
Photoetching and the method for etching, etch electrode pattern, and one layer of low stress Si is deposited using PECVD3N4Dielectric layer, thickness
3) electrode layer 6 and heat-sensitive layer 8, the materials'use VOx films of heat-sensitive layer 8, using ion beam depositing or thing are prepared
The method growth of physical vapor deposition, film thickness
4) sacrifice layer 4 of the second Rotating fields is prepared in the structure that etching terminates, the thickness of sacrifice layer 4 is 0.5 μm~3 μm,
Utilize PECVD deposition low stresses Si3N4Film is used as supporting layer 5,0.10~0.30 μm of 5 thickness of supporting layer；
5) one layer of absorption layer film is deposited using PECVD or PVD methods, such as Ti, TiN metal or nonmetallic, film is thick
Spend and beThen the graphical film of second absorbed layer 11 of method and Si of Lithography Etching are used3N4Film, forms the
Two-layer structure；
6) after the preparation for completing the second Rotating fields, the sacrifice layer of third layer structure is made, sacrificial layer thickness is 0.5 μm~3 μ
M, low stress Si is deposited using PECVD3N4Film is as supporting layer, 0.10~0.30 μm of supporting layer thickness, recycle PECVD or
PVD methods deposit one layer of absorption layer film, such as Ti, TiN metal or nonmetallic, and film thickness isThen light
Carve the graphical film of 3rd absorbed layer 13 and Si3N4Film, forms third layer structure；
8) release of sacrifice layer 4, completion absorbed layer and Si3N4The device of film etching is put into resist remover or ion etching
In the equipment such as machine, plasma ashing, releasing sacrificial layer 4 forms final micro-bridge structure.
The step 1) described in dielectric 3 use Si3N4Film or SiO2Film, film thickness 0.02~
0.30μm。
The step 1), step 4) or step 6) described in sacrifice layer 4 from amorphous carbon, non-crystalline silicon, heatproof photoresist.
The step 3) prepare electrode layer 6 and the specific method of heat-sensitive layer 8 is：First in supporting layer 5Si3N4Upper use ion beam
Deposition (IBD) or the method for physical vapour deposition (PVD) (PVD) growth thermosensitive film layer VOx films and VOx thinfilm protective coatings simultaneously pass through
Photolithography patterning, recycles PVD to prepare electrode layer 6 and electrode passivation layer 7 and photoetching figure on the patterned protective layer of heat-sensitive layer 8
Shape.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God is with principle, and any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (10)
1. a kind of method for preparing broadband non-refrigerated infrared detector, it is characterised in that including step：
1) metallic reflector, 0.05~0.40 μm of film thickness are made in the Semiconductor substrate of manufactured reading circuit；
After etching reflecting layer one layer of dielectric is deposited on reflection layer pattern；Then the preparation of sacrifice layer is carried out；On sacrifice layer
Utilize PECVD deposition low stresses Si3N4Film is used as supporting layer, 0.10~0.30 μm of supporting layer thickness；
2) partial sacrificial layer and the dielectric of bottom are etched away using the method for photoetching and RIE etch, exposes following gold
Belong to electrode, form Via through holes, utilize PVD deposition electrode, thicknessUtilize the method for photoetching and etching, etching
Go out electrode pattern, recycle PECVD to deposit one layer of low stress Si3N4Dielectric layer, thickness
3) electrode layer and heat-sensitive layer are prepared, the heat-sensitive layer materials'use VOx films are heavy using ion beam depositing or physical vapor
Long-pending method growth, film thickness
4) sacrifice layer of the second Rotating fields is prepared in the structure that etching terminates, sacrificial layer thickness is 0.5 μm~3 μm, is utilized
PECVD deposition low stresses Si3N4Film is used as supporting layer, 0.10~0.30 μm of supporting layer thickness；
5) one layer of absorption layer film is deposited using PECVD or PVD methods, film thickness isThen photoetching is used
The method of etching graphically absorbs layer film and Si3N4Film, forms the second Rotating fields；
6) after the preparation for completing the second Rotating fields, the sacrifice layer of third layer structure is made, sacrificial layer thickness is 0.5 μm~3 μm, profit
With PECVD deposition low stresses Si3N4Film recycles PECVD or PVD side as supporting layer, 0.10~0.30 μm of supporting layer thickness
Method deposits one layer of absorption layer film, and film thickness isThen photolithography patterning absorbs layer film and Si3N4It is thin
Film, forms third layer structure；
7) release of sacrifice layer, completion absorbed layer and Si3N4The device of film etching be put into resist remover or ion etching machine, etc.
In ion incineration equipment, releasing sacrificial layer forms final micro-bridge structure.
2. the method for broadband non-refrigerated infrared detector is prepared as claimed in claim 1, it is characterised in that：The step
1) dielectric described in uses Si3N4Film or SiO2Film, 0.02~0.30 μm of film thickness.
3. the method for broadband non-refrigerated infrared detector is prepared as claimed in claim 1, it is characterised in that：The step
1), step 4) or step 6) described in sacrifice layer select amorphous carbon, non-crystalline silicon, heatproof photoresist.
4. the method for broadband non-refrigerated infrared detector is prepared as claimed in claim 1, it is characterised in that the step
3) prepare electrode layer and temperature-sensitive layer method is：In supporting layer Si3N4Upper utilization PVD prepares electrode layer and electrode passivation layer and passed through
Photolithography patterning, then heat is grown on patterned electrode layer protective layer using the method for ion beam depositing or physical vapour deposition (PVD)
Sensitive film layer VOx films and heat-sensitive layer protective layer simultaneously pass through photolithography patterning.
5. the method for broadband non-refrigerated infrared detector is prepared as claimed in claim 4, it is characterised in that the step
3) prepare electrode layer and heat-sensitive layer specific method is：Utilize PVD deposition electrode；Using the method for photoetching and etching, electricity is etched
Pole figure shape, one layer of low stress Si is deposited using PECVD3N4Dielectric layer, thicknessExisted using the method for Lithography Etching
Partial protection layer Si is etched away on electrode passivation layer3N4, the contact hole of electrode and heat-sensitive layer is formed, thickness of electrode is relatively thin, it is necessary to make
Reaction is etched with endpoint monitoring EPD and terminates monitoring, in case by electrode, all etching is clean；Etch behind Contact holes, stood
Thermosensitive film is deposited, heat-sensitive layer materials'use VOx films are grown using the method for ion beam depositing or physical vapour deposition (PVD),
Film thicknessComplete after thermosensitive film etching, low stress Si is deposited using PECVD method3N4Film is protected
Layer, thickness isThen protection layer pattern is lithographically formed, each layer Si is etched3N4Film, is that the release of sacrifice layer is done
Prepare.
6. the method for broadband non-refrigerated infrared detector is prepared as claimed in claim 5, it is characterised in that：Deposit VOx
When first deposit one layer of V/V2O5/ V films, thickness isAs transition zone.
7. the method for broadband non-refrigerated infrared detector is prepared as claimed in claim 5, it is characterised in that：The VOx
The etching of film uses ion beam etching or the method for reactive ion etching.
8. the method for broadband non-refrigerated infrared detector is prepared as claimed in claim 1, it is characterised in that the step
3) prepare electrode layer and heat-sensitive layer specific method is：First in supporting layer Si3N4Upper use ion beam depositing or physical vapour deposition (PVD)
Method grows thermosensitive film layer VOx films and VOx thinfilm protective coatings and by photolithography patterning, recycles PVD patterned
Electrode layer and electrode passivation layer and photolithography patterning are prepared on heat-sensitive layer protective layer.
9. the method for preparing broadband non-refrigerated infrared detector as described in claim 1-8 any one, its feature exists
In there is Semiconductor substrate of the broadband non-refrigerated infrared detector comprising reading circuit and one first microbridge to support knot
The detector of structure, the detector is electrically connected with the reading circuit formation of the Semiconductor substrate, on first micro-bridge structure
Provided with the second micro-bridge structure, second micro-bridge structure is provided with the 3rd micro-bridge structure.
10. the method for broadband non-refrigerated infrared detector is prepared as claimed in claim 9, it is characterised in that：Described
Two micro-bridge structures include the second supporting layer, and second supporting layer is provided with the second absorbed layer；
3rd micro-bridge structure includes the 3rd supporting layer, and the 3rd supporting layer is provided with the 3rd absorbed layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610422054.6A CN106082106B (en) | 2016-06-13 | 2016-06-13 | A kind of broadband non-refrigerated infrared detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610422054.6A CN106082106B (en) | 2016-06-13 | 2016-06-13 | A kind of broadband non-refrigerated infrared detector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106082106A CN106082106A (en) | 2016-11-09 |
| CN106082106B true CN106082106B (en) | 2017-09-05 |
Family
ID=57845970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610422054.6A Active CN106082106B (en) | 2016-06-13 | 2016-06-13 | A kind of broadband non-refrigerated infrared detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106082106B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106800271B (en) * | 2017-01-24 | 2018-06-26 | 烟台睿创微纳技术股份有限公司 | A kind of non-refrigerated infrared focal plane probe dot structure and preparation method thereof |
| CN106672891A (en) * | 2017-01-24 | 2017-05-17 | 烟台睿创微纳技术股份有限公司 | Double-layer uncooled infrared detector structure and preparation method thereof |
| CN107128872B (en) * | 2017-05-11 | 2018-09-18 | 烟台睿创微纳技术股份有限公司 | A kind of novel polarization non-refrigerated infrared focal plane probe and preparation method thereof |
| CN107150995B (en) * | 2017-05-11 | 2019-04-30 | 烟台睿创微纳技术股份有限公司 | A kind of polarization sensitive non-refrigerated infrared detector and preparation method thereof |
| CN108298495B (en) * | 2017-12-19 | 2020-10-16 | 烟台艾睿光电科技有限公司 | Metal anchor point filling process and thermal detection device |
| CN109946261B (en) * | 2017-12-20 | 2021-07-16 | 中国科学院深圳先进技术研究院 | Terahertz wave detection device with adjustable absorption wavelength and preparation method thereof |
| CN109459144B (en) * | 2018-11-12 | 2020-11-03 | 中国科学院长春光学精密机械与物理研究所 | Wide-spectrum infrared sensor based on piezoelectric effect and composite plasmon |
| CN112551478B (en) * | 2020-12-11 | 2024-06-07 | 上海集成电路研发中心有限公司 | Infrared detector and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5597862B2 (en) * | 2007-03-27 | 2014-10-01 | 日本電気株式会社 | Bolometer type THz wave detector |
| CN102692276B (en) * | 2011-03-21 | 2014-05-21 | 浙江大立科技股份有限公司 | Non-refrigeration infrared detector |
| CN103759838B (en) * | 2014-01-13 | 2016-06-01 | 浙江大立科技股份有限公司 | Infrared detector with micro-bridge structure and manufacture method thereof |
| CN103776546A (en) * | 2014-01-21 | 2014-05-07 | 武汉高芯科技有限公司 | Non-refrigeration infrared focal plane array detector of double-layer structure |
-
2016
- 2016-06-13 CN CN201610422054.6A patent/CN106082106B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN106082106A (en) | 2016-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106082106B (en) | A kind of broadband non-refrigerated infrared detector and preparation method thereof | |
| CN106352989B (en) | A kind of production method and structure of non-refrigerated infrared focal plane probe microbridge | |
| CN103715307B (en) | A kind of non-refrigerated infrared detector and preparation method thereof | |
| CN102951597B (en) | A kind of preparation method of infrared detector with micro-bridge structure and micro-bridge structure | |
| CN106298827B (en) | A kind of non-refrigerated infrared focal plane probe pixel and preparation method thereof | |
| CN106276781B (en) | A kind of micro-metering bolometer refers to the preparation method and structure of pixel | |
| CN106124066B (en) | A kind of microbolometer and preparation method of high fill factor | |
| WO2012071820A1 (en) | Infrared detector and method of manufacture thereof and multi-band uncooled infrared focal plane | |
| CN103940518B (en) | A kind of terahertz detection unit micro-bridge structure of low thermal conductance and preparation method thereof | |
| CN106517077B (en) | Infrared detector and manufacturing method thereof | |
| CN106784165B (en) | A kind of novel double-layer non-refrigerated infrared focal plane probe dot structure and preparation method thereof | |
| CN106052883B (en) | Three layers of micro-bridge structure, three layers of uncooled microbolometer and preparation method thereof | |
| CN102315329B (en) | Preparation method of thermosensitive-film infrared detector | |
| CN107150995B (en) | A kind of polarization sensitive non-refrigerated infrared detector and preparation method thereof | |
| JP2008241438A (en) | Bolometer type thz wave detector | |
| CN110174175A (en) | A kind of non refrigerating infrared imaging sensor based on super surface | |
| CN107101728B (en) | A kind of double-colored polarized ir detector of non-brake method and its manufacturing method | |
| EP3522217B1 (en) | Method to prepare pixel for uncooled infrared focal plane detector | |
| KR20090055766A (en) | Bolometer and manufacturing method thereof | |
| CN106340561A (en) | Novel uncooled infrared focal plane detector pixel and fabrication method thereof | |
| CN104953223B (en) | A kind of helical antenna coupling micro-bridge structure and preparation method thereof | |
| CN105129717A (en) | Micro-bridge structure of broadband high-absorption terahertz wave and fabrication method thereof | |
| CN107055464A (en) | A kind of method for using amorphous carbon to make micro-metering bolometer micro-bridge structure as sacrifice layer | |
| CN104078526A (en) | Terahertz wave room temperature detection unit of integrated infrared shielding structure and manufacturing method | |
| CN105811061B (en) | A kind of bridge leg separate antenna coupling micro-bridge structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |