WO2012071820A1 - Infrared detector and method of manufacture thereof and multi-band uncooled infrared focal plane - Google Patents

Infrared detector and method of manufacture thereof and multi-band uncooled infrared focal plane Download PDF

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Publication number
WO2012071820A1
WO2012071820A1 PCT/CN2011/071489 CN2011071489W WO2012071820A1 WO 2012071820 A1 WO2012071820 A1 WO 2012071820A1 CN 2011071489 W CN2011071489 W CN 2011071489W WO 2012071820 A1 WO2012071820 A1 WO 2012071820A1
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Prior art keywords
layer
silicon
microbridge
infrared
bridge
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PCT/CN2011/071489
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French (fr)
Chinese (zh)
Inventor
梁华锋
王宏臣
陈文礼
魏慧娟
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烟台睿创微纳技术有限公司
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Publication of WO2012071820A1 publication Critical patent/WO2012071820A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0801—Means for wavelength selection or discrimination
    • G01J5/0802—Optical filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0808—Convex mirrors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/59—Radiation pyrometry, e.g. infrared or optical thermometry using polarisation; Details thereof

Definitions

  • the invention relates to the field of infrared detection and imaging technology, and more particularly to a multi-band uncooled infrared focal plane fabricated by MEMS technology.
  • BACKGROUND OF THE INVENTION Infrared imaging technology is a widely used night vision technology. Compared with other night vision technologies (artificial illumination, low-light imaging), infrared imaging technology does not require any auxiliary illumination or low-light conditions, and there is no illumination at all. The infrared radiation of the object is directly imaged. Moreover, infrared imaging provides excellent image performance under environmental conditions such as fog, clouds, smoke and dust, and is completely free of the technical limitations of artificial illumination or low-light imaging. Therefore, it is called the third-generation all-weather imaging technology.
  • Uncooled infrared imaging technology has the characteristics of low cost, small size, and low power consumption compared to the cooling type detector. With the continuous improvement of the technical level of uncooled infrared detectors, refrigeration infrared detectors have been gradually replaced in many applications, becoming more widely used imaging core chips for infrared night vision systems, thus having a very broad civil and national defense. Application prospects.
  • the materials currently used in commercial uncooled infrared focal plane products are mainly amorphous silicon (Amorphous si 1 icon ( a _S i) ), vanadium oxide (VOx) and silicate chain (Bar ium s tront). Nium ti tanate (BST) ) three.
  • the principle of uncooled infrared focal plane imaging can be described as: When the detector absorbs the external infrared radiation energy, the temperature of the detector changes: When amorphous silicon and vanadium oxide materials are used, the detector converts the temperature change into an electrical signal through the resistance change.
  • Adopt Adopt
  • the size of the electrical signal is converted into the temperature of the target object to obtain the temperature distribution of the target object, and the target object is imaged.
  • the uncooled infrared imaging band is mainly concentrated in the long-wave infrared band (8 ⁇ 14 ⁇ ), while the imaging band is located in the medium-wave infrared band (3 ⁇ 5 ⁇ ). Both of these bands have their own advantages: Long-wave infrared imaging technology is mature, sensitive, and has a strong ability to penetrate smoke, and can provide excellent imaging effects for most targets. Medium-wave infrared imaging background radiation interference is small, The visible distance in the environment with relatively high humidity is better than that of long-wave infrared, which has important applications in missile warning.
  • infrared imaging technology has attracted the interest of many companies and research institutions.
  • infrared imaging systems In order to achieve multi-band imaging, infrared imaging systems generally use multiple detectors that respond to different bands.
  • Such a system is complex in design, large in size, weight, and power consumption, and high in cost.
  • the advantage of this patented technical solution is that the short-wave infrared and long-wave infrared detectors respectively use different devices, and are mixed and integrated by lamination, and the short-wave infrared detector has high transmittance for long-wave infrared, so short-wave infrared
  • the detector and the long-wave infrared detector do not affect each other and have a high resolution.
  • the disadvantage is that the process difficulty is large. Due to the use of two different principles of the device, the readout circuit design is very complicated.
  • an infrared detector includes a base structure and a microbridge structure, and the base structure includes a silicon substrate substrate including a readout circuit, two readout circuit electrodes, and a reflective layer.
  • the microbridge structure includes a microbridge deck, two support columns, and two support bridge legs, wherein
  • the reflective layer is located on one end surface of the silicon substrate; the two readout circuit electrodes are diagonally distributed, and the reflective layer is located on the same end surface of the silicon substrate substrate;
  • each of the two supporting bridge legs is connected to the microbridge bridge deck, and the other end is connected to the readout circuit on the silicon substrate substrate via the two support columns and two readout circuit electrodes respectively; Causing the microbridge bridge surface to be suspended above the reflective layer, forming an optical resonant cavity between the microbridge bridge surface and the reflective layer;
  • the microbridge bridge surface is disposed with a support layer, a heat sensitive layer and a passivation layer in this order from the optical resonant cavity.
  • the microbridge bridge surface further includes an electromagnetic wave excitation layer, and the electromagnetic wave excitation layer is located at the Above the passivation layer, in close contact with the passivation layer.
  • the electromagnetic wave excitation layer is realized by fabricating an array type sub-wavelength microstructure on a polarized material.
  • the polarized material is one of a metal material or a dielectric material capable of coupling with an externally input infrared radiation signal.
  • the metal material is one of gold, silver, platinum, nickel, titanium, and tungsten;
  • the dielectric material is one of silicon carbide, oxidized, and gallium arsenide.
  • the array type sub-wavelength microstructure is formed by regularly arranging a plurality of microstructure units.
  • the shape of the microstructure unit is one or more of a rectangle, a circle, and a polygon.
  • the period of the microstructure unit is substantially the same as the center wavelength of the wavelength band to be selected, and the size of the microstructure unit is about half of the period.
  • the first step is to fabricate a base structure: one or more metals of nickel chromium, aluminum, or titanium nitride are plated on the silicon substrate by electron beam evaporation or magnetron sputtering to the silicon village. Forming a reflective layer and two readout circuit electrodes on the same end surface of the bottom substrate, and then patterning by a lift-off process, a dry etching or a wet etching method;
  • a sacrificial layer is formed: the sacrificial layer is formed by a spin coating method on the photosensitive polyimide or the non-photosensitive polyimide; or the chemical vapor deposition is performed on the silicon dioxide or the polycrystalline silicon.
  • the sacrificial layer is formed by a spin coating method on the photosensitive polyimide or the non-photosensitive polyimide; or the chemical vapor deposition is performed on the silicon dioxide or the polycrystalline silicon.
  • a sacrificial layer via hole is formed: a sacrificial layer via hole is formed on the sacrificial layer made of photosensitive polyimide by a photolithography method; or, by a dry etching method, a non-photosensitive type poly is formed. a sacrificial layer via hole is formed on the sacrificial layer made of imide, silicon dioxide or polysilicon;
  • the fourth step is to fabricate a support layer in the microbridge structure: using a material of silicon nitride, silicon oxide, silicon oxynitride, or silicon carbide, forming the support layer by chemical vapor deposition; Forming a heat sensitive layer in the microbridge structure: forming the heat sensitive layer by reactive sputtering using vanadium oxide; or forming the heat sensitive layer by plasma enhanced chemical vapor deposition on amorphous silicon And then graphically by dry etching;
  • the sixth step is to fabricate a passivation layer in the microbridge structure: using a material of silicon nitride, silicon oxide, silicon oxynitride, or silicon carbide, forming the passivation layer by a chemical vapor deposition method;
  • the contact hole of the readout circuit and the contact hole of the heat sensitive layer are formed: by using an etching gas composed of a mixture of oxygen and trifluoromethane, the contact hole of the readout circuit and the contact of the heat sensitive layer are formed by a dry etching method. hole;
  • the metal contact electrode layer is formed: using the metal of any one of titanium, aluminum, titanium nitride and vanadium, the metal contact electrode layer is formed by electron beam evaporation or magnetron sputtering, and then dried by dry etching.
  • the etch method is graphically implemented;
  • the electromagnetic wave excitation layer in the microbridge structure is fabricated: the electromagnetic wave excitation layer is formed by a magnetron sputtering method or a chemical vapor deposition method, and then patterned by a dry etching method or a wet etching method. Forming an array type subwavelength microstructure;
  • the microbridge structure is etched, the sacrificial layer is removed, and the microbridge structure is released: the microbridge structure is first etched by dry etching; the sacrificial layer is removed by the following method: using oxygen plasma Drying the sacrificial layer made of photosensitive polyimide or non-photosensitive polyimide; or removing the sacrificial layer made of silicon dioxide using hydrogen fluoride gas; or using cesium fluoride The sacrificial layer made of polysilicon is removed.
  • the electromagnetic wave excitation layer has a thickness of 50 nm to 200 nm.
  • the present invention further provides a multi-band uncooled infrared focal plane, wherein the focal plane is regularly arranged or irregularly arranged with a plurality of infrared detections capable of absorbing infrared radiation signals of different wavelength bands.
  • the focal plane is regularly arranged or irregularly arranged with a plurality of infrared detections capable of absorbing infrared radiation signals of different wavelength bands.
  • FIG. 1 is a schematic structural view of an infrared detector according to the present invention
  • FIG. 2 is a schematic cross-sectional view of the k-k' of the infrared detector of FIG. 1;
  • FIG. 3 is a schematic view showing a first configuration of an array type sub-wavelength microstructure of an electromagnetic wave excitation layer in the present invention
  • Figure 4 is a schematic view showing a second configuration of an array type sub-wavelength microstructure of an electromagnetic wave excitation layer in the present invention
  • Figure 5 is a schematic view showing a third constitution of an array type sub-wavelength microstructure of an electromagnetic wave excitation layer in the present invention.
  • Figure 6 is a schematic diagram showing the relationship between the wavelength of the electromagnetic wave coupling center and the polarization material, the arrangement of the array, and the period;
  • Figure 7a is a schematic cross-sectional view of the base structure in the A-A' direction of the present invention.
  • Figure 7b is a schematic cross-sectional view of the sacrificial layer in the A-A' direction of the present invention.
  • FIG. 7c is a schematic cross-sectional view of the sacrificial layer in the A-A' direction after the via hole of the sacrificial layer is formed;
  • FIG. 7d is a schematic cross-sectional view of the support layer in the A-A' direction of the present invention.
  • Figure 7e is a schematic cross-sectional view of the heat sensitive layer in the A-A' direction of the present invention.
  • Figure 7f is a schematic cross-sectional view of the passivation layer in the A-A' direction of the present invention.
  • Figure 7g is a cross-sectional view of the passivation layer in the k-k' direction after the electrode contact hole and the contact layer of the heat sensitive layer are formed;
  • FIG. 7h is a schematic cross-sectional view of the metal contact electrode in the AA' direction of the present invention
  • FIG. 7 is a schematic cross-sectional view of the electromagnetic wave excitation layer in the AA' direction of the present invention
  • FIG. 7 j is a microbridge structure in the AA' direction of the present invention. Schematic diagram of the section;
  • Figure 8 is a schematic view showing an arrangement of focal planes of different wavelength detectors in the present invention.
  • an infrared detector includes a base structure and a microbridge structure, and the base structure includes a silicon substrate base 1 including a readout circuit, and a reflective layer 2.
  • the microbridge structure comprises a microbridge deck 5, two support columns 3, and two support legs 4.
  • the reflective layer is located on one end surface of the base of the silicon substrate; the electrodes of the two readout circuits are diagonally distributed, and the reflective layer is located on the same end surface of the base of the silicon substrate, and is not in contact with the reflective layer.
  • Each of the two support bridge legs has one end connected to the microbridge bridge deck, and the other end is connected to the readout circuit on the silicon substrate base via two support columns and two readout circuit electrodes; the microbridge bridge deck is suspended in the reflection Above the layer, an optical resonant cavity is formed between the microbridge deck and the reflective layer.
  • the material of the reflective layer 2 is generally a metal material, because the metal material can provide a very high reflectance in the infrared band, and the material can be aluminum, nickel-chromium alloy, gold, titanium nitride or the like.
  • the optical resonant cavity 13 formed between the reflective layer 2 and the microbridge deck 5 enhances the absorption rate of the detector for the infrared radiation signal and improves the sensitivity of the detector.
  • the support column 3 and the support bridge 4 cooperate with each other to support the micro bridge deck 5, to realize the electrical connection between the microbridge deck 5 and the readout circuit, and also to increase the microbridge deck 5 and the silicon substrate base.
  • the thermal resistance between 1 increases the responsiveness of the detector.
  • the structure of the support column 3 may be a bowl-like structure composed of a support material and a metal material, or a plug-like structure composed only of a metal material.
  • the above metal materials generally use metals such as aluminum, nickel, titanium, and vanadium having high electrical conductivity.
  • the bridge leg 4 is generally constructed of a multilayer structure including a dielectric support layer and a metallic conductive layer.
  • the microbridge deck 5 is vertically distributed with the support layer 8, the heat sensitive layer 9, the passivation layer 10, and the electromagnetic wave excitation layer 12 from the optical resonator 13.
  • the electromagnetic wave excitation layer 12 is located above the passivation layer 10, and is blunt Layer 10 close contact.
  • the present invention achieves spectral selection by coupling between the electromagnetic wave excitation layer 12 and the incident infrared radiation signal 14, thereby effecting multi-band infrared imaging of the infrared focal plane formed by the detector of the present invention.
  • the electromagnetic wave excitation layer 12 is realized by fabricating an array type sub-wavelength microstructure on a polarized material.
  • the above polarized material is one of a metal material or a dielectric material capable of coupling with an externally input infrared radiation signal.
  • the metal material may be one of gold, silver, platinum, nickel, titanium, and tungsten; and the dielectric material may be one of silicon carbide, oxidized, and gallium arsenide.
  • the array-type sub-wavelength microstructure is determined by the shape, size, and period of the plurality of microstructure units 15/16.
  • the shape of the microstructure unit may be one or more of a rectangle, a circle, and a polygon.
  • the absorption band is also related to the selection of the size and period of the microstructure unit. As shown in FIG. 3, if the microstructure unit 15 is rectangular, the size of the microstructure unit 15 is the side length L, and P is a period; as shown in FIG. 4 and FIG. 5, if the microstructure unit 16 is circular, The size of the microstructure unit 16 is the radius R, and P is the period. In general, the period is substantially the same as the center wavelength of the desired band, that is, the period is selected near the center wavelength of the desired band, and the size of the microstructure unit is about half of the period.
  • the details are as follows: For the medium-wave infrared band (that is, the wavelength band of 3 ⁇ 5 ⁇ , the center wavelength is 4 ⁇ ) and the long-wave infrared band (that is, the wavelength band of 8 ⁇ 14 ⁇ , the center wavelength is 11 ⁇ m),
  • the period can be selected from a few micrometers to twenty micrometers, and the size can be selected from a few micrometers to a dozen micrometers.
  • some fine adjustment is calculated on the basis of the above-mentioned period and size selection values, so that the excitation wavelength of the electromagnetic wave excitation layer 12 corresponds to the selected wavelength band.
  • the cycle can be selected as follows: First, a reference period is obtained according to the dielectric constant of the selected polarized material; secondly, the material, shape, period, and size of the microstructure unit are determined. In the case of simulation, if the simulation results show that there is a deviation between the excited wavelength and the wavelength of the selected band, after the reference period is fine-tuned, the simulation is performed until the excited wavelength corresponds to the selected band.
  • a base structure is formed: one of nickel-nickel (NiCr), aluminum (Al), or titanium nitride (TiN) is plated on the silicon substrate 1 by electron beam evaporation, magnetron sputtering, or the like.
  • NiCr nickel-nickel
  • Al aluminum
  • TiN titanium nitride
  • Several metals are formed on the same end face of the silicon substrate 1 to form a reflective layer 2 and two readout circuit electrodes 6 having a thickness of 50 300 nm; and then by a lift-off process, a dry etching or a wet etching method Implement graphics.
  • N i C r is formed by electron beam evaporation to form a reflective layer 2 and a readout circuit 6 having a thickness of 5 Onm to 300 nm, and then patterned by a wet etching method, see FIG. 7a.
  • a sacrificial layer 7 is produced, see Figure 7b.
  • This step is different depending on the material selected. There are two ways to achieve this: If photosensitive polyimide or non-photosensitive polyimide (PI: polyimide) is used, the sacrificial layer 7 can be formed by spin coating on PI; Silica (SiO 2 ) or polycrystalline ( oly-silicon ), the sacrificial layer 7 is formed by chemical vapor deposition of silicon dioxide or polycrystalline silicon. The thickness of the sacrificial layer 7 is 1 ⁇ m to 3 ⁇ m. As an embodiment of this step, the thickness of the sacrificial layer 7 is 2.5 ⁇ m.
  • a sacrificial layer via 71 is formed, see Fig. 7c.
  • This step has two implementations depending on the material of the sacrificial layer 7: If the sacrificial layer 7 made of photosensitive PI is used, the via hole of the sacrificial layer 7 is formed on the sacrificial layer 7 by photolithography; A sacrificial layer 7 made of photosensitive PI, silicon dioxide or polysilicon is used to form a via hole of the sacrificial layer 7 on the sacrificial layer 7 by a RIE dry etching method.
  • the RIE dry etching gas is generally oxygen (0 2 ), trifluorodecane (CHF 3 ), carbon tetrafluoride (CF 4 ), sulfur hexafluoride (SF 6 ), or the like.
  • the sidewall of the sacrificial layer via 71 has a certain inclination angle to facilitate step coverage, reducing the probability of point connection failure, and improving The strength and yield of the microbridge structure.
  • the support layer 8 in the microbridge structure 100 is fabricated: using any one of silicon nitride (SiNx), silicon dioxide (SiO 2 ), silicon oxynitride (SiON), or silicon carbide (SiC).
  • the support layer 8 is formed by a chemical vapor deposition method, and the thickness of the support layer 8 is 50 nm to 300 nm, see FIG. 7d.
  • the second step of the sacrificial layer 7 is selected as Si0 2
  • the same material cannot be selected as the sacrificial layer 7, that is, Si0 2 cannot be selected, which can prevent the subsequent release of micro.
  • the support layer 8 is affected.
  • thermosensitive layer 9 in the microbridge structure 100 is fabricated.
  • V0J vanadium oxide
  • V0 X can be formed by reactive sputtering
  • Sensitive layer 9 If amorphous silicon (a-Si) is used, the heat sensitive layer 9 can be formed by plasma enhanced chemical vapor deposition of a-Si, and the thickness of the heat sensitive layer 9 is 50 legs to 300 nm. Patterning is then performed by RIE dry etching, see Figure 7e.
  • the passivation layer 10 in the microbridge structure 100 is fabricated: using any one of silicon nitride (SiN x ), silicon dioxide (SiO 2 ), silicon oxynitride (SiON), or silicon carbide (SiC).
  • the material is formed by a chemical vapor deposition method to form a passivation layer 10 having a thickness of 50 legs to 300 nm, see FIG. 7f.
  • the second step of the sacrificial layer 7 is made of Si0 2 , the same material may not be selected for the sacrificial layer 7 in this step, that is, Si0 2 cannot be selected, and the subsequent release can be prevented.
  • the passivation layer 10 is affected.
  • the readout circuit electrode contact hole 19 and the heat sensitive layer contact hole 20 are formed: an etching gas composed of a mixture of oxygen (0 2 ) and trifluoromethane (CHF 3 ) is used, and the RIE is used for etching and reading.
  • the circuit electrode contact hole 19 and the heat sensitive layer contact hole 20 are shown, see Fig. 7g.
  • the metal contact electrode layer 11 is formed: using any one of titanium (Ti), aluminum (Al), titanium nitride (TiN), and vanadium (V), using electron beam evaporation or magnetron sputtering
  • the metal contact electrode layer 11 is formed to have a thickness of 50 nm to 200 nm; and then patterned by RIE dry etching, and the etching gas is generally argon (Ar), trifluoromethane (CHF 3 ), or boron trichloride (BC1). 3 ), chlorine (Cl 2 ), etc. See Figure 7h.
  • the electromagnetic wave excitation layer 12 in the microbridge structure 100 is fabricated: the electromagnetic wave excitation layer 12 is formed by a magnetron sputtering method or a chemical vapor deposition method for the polarized material, and then the dry etching method or the wet etching method is used.
  • the etching method is patterned to form an array type sub-wavelength microstructure; as an embodiment of this step, gold (Au) is formed by magnetron sputtering to form an electromagnetic wave excitation layer 12 having a thickness of 50 nm to 200 nm; and then potassium iodide is used.
  • (KI) and iodine (12) was patterned to achieve a wet etching method.
  • the size and period of the microstructures fabricated on different detectors are designed according to different response bands to achieve multi-band imaging, see Figure 7i.
  • the microbridge structure 100 is etched, the sacrificial layer 7 is removed, and the microbridge structure 100 is released: first, the lithography method is used to realize the patterning of the bridge structure; then the passivation layer 10 is dry etched by using CHF 3 and 0 2 And the support layer 8 until the sacrificial layer 7 is exposed, thereby etching the truss structure 100; finally, according to the material for preparing the sacrificial layer 7, the sacrificial layer 7 is removed in the following three ways: if photosensitive polyimide or If the sacrificial layer 7 is made of non-photosensitive polyimide, the sacrificial layer 7 is removed by oxygen plasma dry method; if the sacrificial layer 7 made of SiO 2 is used , the sacrificial layer 7 is removed by using hydrogen fluoride (HF) gas; The sacrificial layer 7 made of polysilicon is removed by using xenon fluoride (XeF 2 ).
  • HF hydrogen fluoride
  • the present invention further provides a multi-band uncooled infrared focal plane in which a plurality of infrared detectors capable of absorbing infrared radiation signals of different wavelength bands are regularly arranged or irregularly arranged on a focal plane.
  • a multi-band uncooled infrared focal plane in which a plurality of infrared detectors capable of absorbing infrared radiation signals of different wavelength bands are regularly arranged or irregularly arranged on a focal plane.
  • the mid-band infrared detector 17 and the long-band infrared detector 18 of the dual-band uncooled focal plane 201/202 can be arranged in two ways:
  • the dual-band uncooled focal plane 201 is arranged in a checkerboard format with a resolution in the water.
  • the same ratio is reduced in both the horizontal and vertical directions. That is, if the infrared radiation signal in the middle band is absorbed, every other long-wavelength infrared detector 18 in the horizontal and vertical directions extracts an image acquired by the mid-band infrared detector 17, and the entire distribution band infrared
  • the resolution of the detector 17 is reduced by half in both the horizontal and vertical directions compared to the focal plane of the detector 17.
  • the two-band uncooled focal plane 202 is arranged in an interlaced manner in the horizontal direction, and the resolution is reduced by half in the horizontal direction and remains unchanged in the vertical direction. That is, if the long-band infrared radiation signal is absorbed, every other mid-band infrared detector 17 in the horizontal direction extracts an image acquired by the long-band infrared detector 18, and all the long-band infrared detectors 18 are distributed. Compared to the focal plane, the resolution is reduced by half in the horizontal direction, but the resolution in the vertical direction does not change. Similarly, the infrared focal plane can also be formed by interlacing in the vertical direction.
  • the medium-band infrared detector 17 and the long-band infrared detector 18 on the infrared focal plane shown in FIG. 8 and FIG. 9 are regularly arranged, and in addition, a plurality of medium-band infrared detectors 17 and a plurality of long-wavelength infrared detectors are provided.
  • the devices 18 can also be arranged irregularly.
  • the specific method is as follows: Because the focal plane is distributed after the mid-band infrared The positional relationship between the detector 17 and the long-band infrared detector 18 is fixed, so that after obtaining the image data acquired by the entire focal plane, the focal plane image data obtained from the obtained infrared-radiation signal image can be obtained as needed.
  • the image information obtained by the mid-band infrared detector ⁇ distributed on the focal plane is extracted to form a medium-wave infrared radiation image. If a long-band infrared radiation signal image is required, the focal plane image data obtained is extracted from the focal plane image. Distributed by the long-band infrared detector 18 The image information constitutes a long-wave infrared radiation image.
  • the invention realizes multi-band imaging by making a sub-wavelength microstructure on the surface of the detector, but the method is not limited to the uncooled infrared detector, and can be applied to other types of detection imaging techniques, for example. It can be used on imaging chips such as refrigerated detectors, CMOS sensors, and CCD sensors to achieve multi-band imaging.

Abstract

An infrared detector of the present invention comprises a base structure and a micro-bridge structure. The base structure comprises a silicon substrate base (1) including a read out circuit, two read out circuit electrodes (6) and a reflective layer (2). The micro-bridge structure comprises a micro-bridge surface (5), two support pillars (3) and two support bridge legs (4). The reflective layer (2) is located on one side of the silicon substrate base (1). Two read out circuit electrodes (6) are symmetric against the diagonal line on the same side of the silicon substrate base (1) as the reflective layer (2), and the two read out circuit electrodes (6) are not in contact with the reflective layer (2). One end of each of the two support bridge legs (4) is connected with the micro-bridge surface (5), the other ends are respectively connected with the read out circuit through the support pillars (3) and the read out circuit electrodes (6), making the micro-bridge surface (5) hang above the reflective layer (2), forming an optical resonant cavity between the micro-bridge surface (5) and the reflective layer (2). There are a support layer, a thermal sensitive layer, a passivation layer, and an electromagnetic wave excitation layer up from the optical resonant cavity sequentially on the surface of the micro-bridge. Besides, it also provides a method of manufacturing a detector and a multi-band infrared focal plane. The present invention enables a multi-band uncooled infrared focal plane which has simple structure, small volume, less difficulty in production process, low cost and high yield.

Description

说 明 书 红外探测器及其制作方法及多波段非制冷红外焦平面 技术领域 本发明涉及红外探测与成像技术领域， 尤其涉及一种采用 MEMS技术制 作的多波段非制冷红外焦平面。 背景技术 红外成像技术作为一种广泛使用的夜视技术， 与其它夜视技术（人工照 明、 微光成像）相比， 红外成像技术不需要任何辅助照明方式或微光条件， 在完全没有光照条件下直接对物体的红外辐射成像。而且红外成像在雾、云、 烟和灰尘等环境条件下均能提供优良的图像性能，彻底摆脱了人工照明或弱 光成像的技术限制 , 因此被称为第三代全天候成像技术。  BACKGROUND OF THE INVENTION 1. Field of the Invention The invention relates to the field of infrared detection and imaging technology, and more particularly to a multi-band uncooled infrared focal plane fabricated by MEMS technology. BACKGROUND OF THE INVENTION Infrared imaging technology is a widely used night vision technology. Compared with other night vision technologies (artificial illumination, low-light imaging), infrared imaging technology does not require any auxiliary illumination or low-light conditions, and there is no illumination at all. The infrared radiation of the object is directly imaged. Moreover, infrared imaging provides excellent image performance under environmental conditions such as fog, clouds, smoke and dust, and is completely free of the technical limitations of artificial illumination or low-light imaging. Therefore, it is called the third-generation all-weather imaging technology.
非制冷红外成像技术相对于制冷型探测器， 具有成本低、 体积小、 功耗 低的特点。 随着非制冷红外探测器技术水平的不断提高， 在许多的应用场合 已经逐步取代制冷型红外探测器， 成为更多红外夜视仪***广泛采用的成像 核心芯片， 从而具有非常广阔的民事和国防应用前景。  Uncooled infrared imaging technology has the characteristics of low cost, small size, and low power consumption compared to the cooling type detector. With the continuous improvement of the technical level of uncooled infrared detectors, refrigeration infrared detectors have been gradually replaced in many applications, becoming more widely used imaging core chips for infrared night vision systems, thus having a very broad civil and national defense. Application prospects.
目前商业化的非制冷红外焦平面产品所采用的材料主要有无定形硅 (Amorphous s i 1 icon ( a _S i) )、 氧化钒（Vanadium oxide (VOx) )和钬酸链钡 (Bar ium s tront ium t i tanate (BST) )三种。 非制冷红外焦平面成像原理可筒 述为， 当探测器吸收外界红外辐射能量， 探测器的温度会发生变化： 采用无 定形硅和氧化钒材料则探测器通过电阻变化将温度变化转换成电信号； 采用  The materials currently used in commercial uncooled infrared focal plane products are mainly amorphous silicon (Amorphous si 1 icon ( a _S i) ), vanadium oxide (VOx) and silicate chain (Bar ium s tront). Nium ti tanate (BST) ) three. The principle of uncooled infrared focal plane imaging can be described as: When the detector absorbs the external infrared radiation energy, the temperature of the detector changes: When amorphous silicon and vanadium oxide materials are used, the detector converts the temperature change into an electrical signal through the resistance change. Adopt
电信号的大小， 换算成目标物体的温度， 从而得到目标物体的温度分布， 对 目标物体进行成像。 目前， 非制冷红外成像波段主要集中在长波红外波段 (8 μηι~14μηι), 而成像波段位于中波红外波段（3μηι~5 μηι)的产品比较少。 这两个波段成 像均有各自的优点： 长波红外成像技术成熟， 灵敏度高， 对烟雾的穿透能力 比较强， 能够对大部分目标提供优异的成像效果； 中波红外成像背景辐射干 扰小， 在湿度比较大的环境中可视距离优于长波红外， 在导弹预警方面有重 要的应用。 由于长波红外成像和中波红外成像各具优点， 且提供不同的光谱 信息，所以美国的一些先进夜间战术成像***同时配备有长波红外和中波红 外成像***。 The size of the electrical signal is converted into the temperature of the target object to obtain the temperature distribution of the target object, and the target object is imaged. At present, the uncooled infrared imaging band is mainly concentrated in the long-wave infrared band (8 μηι~14μηι), while the imaging band is located in the medium-wave infrared band (3μηι~5 μηι). Both of these bands have their own advantages: Long-wave infrared imaging technology is mature, sensitive, and has a strong ability to penetrate smoke, and can provide excellent imaging effects for most targets. Medium-wave infrared imaging background radiation interference is small, The visible distance in the environment with relatively high humidity is better than that of long-wave infrared, which has important applications in missile warning. Because of the advantages of long-wave infrared imaging and medium-wave infrared imaging, and the provision of different spectral information, some advanced nighttime tactical imaging systems in the United States are equipped with long-wave infrared and medium-wave infrared imaging systems.
近年来， 多波段红外成像技术引起了许多公司和研究机构的兴趣。 为了 实现多波段成像， 红外成像***一般采用多个对不同波段响应的探测器， 这 样的***设计复杂， 体积、 重量、 功耗均比较大， 而且成本高。  In recent years, multi-band infrared imaging technology has attracted the interest of many companies and research institutions. In order to achieve multi-band imaging, infrared imaging systems generally use multiple detectors that respond to different bands. Such a system is complex in design, large in size, weight, and power consumption, and high in cost.
国外在红外多波段成像方面， 美国雷神公司在 2009年 12月申请了多波 段成像专利 （美国专利， 名称： Dual Band Imager with Visible or SWIR Detectors Combined with Uncooled LWIR Detectors, 专利号： US 7, 629, 582 B2， 公开日期： 2009.12.8 )。 该专利的技术方案是采用光子型探测器和热敏 型探测器混合集成的方式， 光子型探测器作为短波红外探测器， 而热敏型探 测器作为长波红外探测器。该专利技术方案的优点是短波红外和长波红外的 探测器分别采用不同的器件， 而且采用层叠的方式混合集成在一起， 短波红 外探测器对长波红外具有^艮高的透过率， 所以短波红外探测器和长波红外探 测器互不影响， 分辨率高。 缺点是工艺难度^艮大， 由于采用两种不同原理的 器件， 读出电路设计非常复杂。  In the field of infrared multi-band imaging in the United States, Raytheon applied for a multi-band imaging patent in December 2009 (US Patent, Name: Dual Band Imager with Visible or SWIR Detectors Combined with Uncooled LWIR Detectors, Patent No.: US 7, 629, 582 B2, published date: 2009.12.8). The patented solution is a hybrid approach that uses a photon detector and a thermal detector. The photon detector acts as a short-wave infrared detector and the thermal detector acts as a long-wave infrared detector. The advantage of this patented technical solution is that the short-wave infrared and long-wave infrared detectors respectively use different devices, and are mixed and integrated by lamination, and the short-wave infrared detector has high transmittance for long-wave infrared, so short-wave infrared The detector and the long-wave infrared detector do not affect each other and have a high resolution. The disadvantage is that the process difficulty is large. Due to the use of two different principles of the device, the readout circuit design is very complicated.
国内在红外多波段成像方面， 中国电子科技集团公司第十三研究所在 2009年 12月申请了一个双波段成像专利 （中国专利， 名称： 一种 MEMS 非 制冷双波段红外探测器及其制备， 申请号： 200910228000.6, 公开日期： 2010.05.26 )。该专利采用通过调节光学谐振腔长度的方式实现双波段成像。 该专利的优点是原理比较筒单， 容易设计。 缺点是采用双层微桥结构， 而且 两层微桥结构分别独立， 使得结构复杂， 工艺实现难度很大； 由于需要额外 的对谐振腔长的控制， 也增加了读出电路设计的难度。 发明内容 本发明所要解决的技术问题是提供一种实现筒单、可降低成像***的体 积、 重量和功耗， 且低成本的多波段非制冷红外焦平面。 In the field of infrared multi-band imaging, the 13th Research Institute of China Electronics Technology Group applied for a dual-band imaging patent in December 2009 (Chinese patent, name: a MEMS uncooled dual-band infrared detector and its preparation, Application No.: 200910228000.6, Publication Date: 2010.05.26 ). This patent uses dual-band imaging by adjusting the length of the optical cavity. The advantage of this patent is that the principle is relatively simple and easy to design. The disadvantage is that the two-layer micro-bridge structure is adopted, and the two-layer micro-bridge structure is independent, which makes the structure complicated and the process realization is very difficult; because of the additional control of the cavity length, the difficulty of the readout circuit design is also increased. SUMMARY OF THE INVENTION The technical problem to be solved by the present invention is to provide a multi-band uncooled infrared focal plane that realizes a single cartridge, can reduce the size, weight and power consumption of the imaging system, and is low in cost.
作为本发明技术方案的一方面， 提供一种红外探测器， 包括基底结构、 微桥结构， 所述基底结构包括含有读出电路的硅村底基底、 两个读出电路电 极、 反射层， 所述微桥结构包括微桥桥面、 两个支撑柱、 两个支撑桥腿， 其 中，  As an aspect of the technical solution of the present invention, an infrared detector includes a base structure and a microbridge structure, and the base structure includes a silicon substrate substrate including a readout circuit, two readout circuit electrodes, and a reflective layer. The microbridge structure includes a microbridge deck, two support columns, and two support bridge legs, wherein
所述反射层位于所述硅村底基底的一端面上； 所述两个读出电路电极呈 对角线分布， 与所述反射层位于所述硅村底基底的同一端面上；  The reflective layer is located on one end surface of the silicon substrate; the two readout circuit electrodes are diagonally distributed, and the reflective layer is located on the same end surface of the silicon substrate substrate;
所述两个支撑桥腿各有一端与所述微桥桥面相连， 另一端经由所述两个 支撑柱和两个读出电路电极分别与所述硅村底基底上的读出电路相连；使得 所述微桥桥面悬空于所述反射层之上，在所述微桥桥面与所述反射层之间形 成一光学谐振腔；  One end of each of the two supporting bridge legs is connected to the microbridge bridge deck, and the other end is connected to the readout circuit on the silicon substrate substrate via the two support columns and two readout circuit electrodes respectively; Causing the microbridge bridge surface to be suspended above the reflective layer, forming an optical resonant cavity between the microbridge bridge surface and the reflective layer;
所述微桥桥面自所述光学谐振腔向上依次分布有支撑层、 热敏层、 钝化 层， 特别地， 所述微桥桥面还包括一电磁波激发层， 所述电磁波激发层位于 所述钝化层之上， 与所述钝化层紧密接触。  The microbridge bridge surface is disposed with a support layer, a heat sensitive layer and a passivation layer in this order from the optical resonant cavity. In particular, the microbridge bridge surface further includes an electromagnetic wave excitation layer, and the electromagnetic wave excitation layer is located at the Above the passivation layer, in close contact with the passivation layer.
进一步地， 所述电磁波激发层通过在极化材料上制作阵列型亚波长微结 构实现。  Further, the electromagnetic wave excitation layer is realized by fabricating an array type sub-wavelength microstructure on a polarized material.
进一步地， 所述极化材料为能与外部输入的红外辐射信号发生耦合作用 的金属材料或者电介质材料中的一种。  Further, the polarized material is one of a metal material or a dielectric material capable of coupling with an externally input infrared radiation signal.
进一步地， 所述金属材料为金、 银、 铂、 镍、 钛、 钨中的一种； 所述电 介质材料为碳化硅、 氧化辞、 砷化镓中的一种。 Further, the metal material is one of gold, silver, platinum, nickel, titanium, and tungsten; The dielectric material is one of silicon carbide, oxidized, and gallium arsenide.
进一步地， 所述阵列型亚波长微结构由多个微结构单元规则排列形成。 进一步地， 所述微结构单元的形状为矩形、 圓形、 多边形中的一种或多 种。  Further, the array type sub-wavelength microstructure is formed by regularly arranging a plurality of microstructure units. Further, the shape of the microstructure unit is one or more of a rectangle, a circle, and a polygon.
进一步地， 所述微结构单元的周期基本与欲选波段的中心波长相同， 所 述微结构单元的尺寸约为周期的一半。  Further, the period of the microstructure unit is substantially the same as the center wavelength of the wavelength band to be selected, and the size of the microstructure unit is about half of the period.
作为本发明技术方案的另一方面， 还提供一种制作红外探测器的方法， 具体实现步骤如下，  As another aspect of the technical solution of the present invention, a method for manufacturing an infrared detector is further provided, and the specific implementation steps are as follows.
第一步， 制作基底结构： 利用电子束蒸发或者磁控溅射方法在硅村底基 底上镀制镍铬、 铝、 或氮化钛中的一种或几种金属， 以在所述硅村底基底的 同一端面上形成反射层和两个读出电路电极， 再通过剥离工艺、 干法刻蚀或 者湿法刻蚀方法实现图形化；  The first step is to fabricate a base structure: one or more metals of nickel chromium, aluminum, or titanium nitride are plated on the silicon substrate by electron beam evaporation or magnetron sputtering to the silicon village. Forming a reflective layer and two readout circuit electrodes on the same end surface of the bottom substrate, and then patterning by a lift-off process, a dry etching or a wet etching method;
第二步， 制作牺牲层： 对光敏型聚酰亚胺或者非光敏型聚酰亚胺采用旋 涂方法来制作所述牺牲层； 或者， 对二氧化硅或者多晶硅采用化学气相沉积 的方法来制作所述牺牲层；  In the second step, a sacrificial layer is formed: the sacrificial layer is formed by a spin coating method on the photosensitive polyimide or the non-photosensitive polyimide; or the chemical vapor deposition is performed on the silicon dioxide or the polycrystalline silicon. The sacrificial layer;
第三步， 制作牺牲层通孔： 通过光刻方法在由光敏型聚酰亚胺制成的所 述牺牲层上制作牺牲层通孔； 或者， 通过干法刻蚀方法在由非光敏型聚酰亚 胺、 二氧化硅或者多晶硅制成的所述牺牲层上制作牺牲层通孔；  In the third step, a sacrificial layer via hole is formed: a sacrificial layer via hole is formed on the sacrificial layer made of photosensitive polyimide by a photolithography method; or, by a dry etching method, a non-photosensitive type poly is formed. a sacrificial layer via hole is formed on the sacrificial layer made of imide, silicon dioxide or polysilicon;
第四步， 制作微桥结构中的支撑层： 使用氮化硅、 氧化硅、 氮氧化硅、 或碳化硅中的任一种材料， 采用化学气相沉积方法制作形成所述支撑层； 第五步， 制作微桥结构中的热敏层： 对氧化钒采用反应溅射方法镀制形 成所述热敏层； 或者， 对无定形硅采用等离子体增强化学气相沉积法镀制形 成所述热敏层， 然后再通过干法刻蚀实现图形化；  The fourth step is to fabricate a support layer in the microbridge structure: using a material of silicon nitride, silicon oxide, silicon oxynitride, or silicon carbide, forming the support layer by chemical vapor deposition; Forming a heat sensitive layer in the microbridge structure: forming the heat sensitive layer by reactive sputtering using vanadium oxide; or forming the heat sensitive layer by plasma enhanced chemical vapor deposition on amorphous silicon And then graphically by dry etching;
第六步， 制作微桥结构中的钝化层： 使用氮化硅、 氧化硅、 氮氧化硅、 或碳化硅中的任一种材料， 采用化学气相淀积方法制作形成所述钝化层； 第七步， 制作读出电路电极接触孔和热敏层接触孔： 利用由氧气与三氟 甲烷混合构成的刻蚀气体， 采用干法刻蚀方法形成读出电路电极接触孔和热 敏层接触孔； The sixth step is to fabricate a passivation layer in the microbridge structure: using a material of silicon nitride, silicon oxide, silicon oxynitride, or silicon carbide, forming the passivation layer by a chemical vapor deposition method; In the seventh step, the contact hole of the readout circuit and the contact hole of the heat sensitive layer are formed: by using an etching gas composed of a mixture of oxygen and trifluoromethane, the contact hole of the readout circuit and the contact of the heat sensitive layer are formed by a dry etching method. hole;
第八步， 制作金属接触电极层： 使用钛、 铝、 氮化钛、 钒中的任一种金 属， 采用电子束蒸发或磁控溅射制作所述金属接触电极层， 然后再通过干法 刻蚀方法实现图形化；  In the eighth step, the metal contact electrode layer is formed: using the metal of any one of titanium, aluminum, titanium nitride and vanadium, the metal contact electrode layer is formed by electron beam evaporation or magnetron sputtering, and then dried by dry etching. The etch method is graphically implemented;
第九步， 制作微桥结构中的电磁波激发层： 采用磁控溅射方法或化学气 相沉积方法制作形成所述电磁波激发层， 然后再利用干法刻蚀方法或者湿法 刻蚀方法实现图形化， 形成阵列型亚波长微结构；  In the ninth step, the electromagnetic wave excitation layer in the microbridge structure is fabricated: the electromagnetic wave excitation layer is formed by a magnetron sputtering method or a chemical vapor deposition method, and then patterned by a dry etching method or a wet etching method. Forming an array type subwavelength microstructure;
第十步， 刻蚀出微桥结构， 去除所述牺牲层， 释放微桥结构： 先采用干 法刻蚀方法刻蚀出微桥结构； 再采用下列方法去除所述牺牲层： 利用氧等离 子体干法去除由光敏型聚酰亚胺或者非光敏型聚酰亚胺制成的所述牺牲层； 或者， 利用氟化氢气体去除由二氧化硅制成的所述牺牲层； 或者， 利用氟化 氙去除由多晶硅制成的所述牺牲层。  In the tenth step, the microbridge structure is etched, the sacrificial layer is removed, and the microbridge structure is released: the microbridge structure is first etched by dry etching; the sacrificial layer is removed by the following method: using oxygen plasma Drying the sacrificial layer made of photosensitive polyimide or non-photosensitive polyimide; or removing the sacrificial layer made of silicon dioxide using hydrogen fluoride gas; or using cesium fluoride The sacrificial layer made of polysilicon is removed.
进一步地， 所述电磁波激发层的厚度为 50nm ~ 200nm。  Further, the electromagnetic wave excitation layer has a thickness of 50 nm to 200 nm.
作为本发明技术方案再一方面，本发明还提供一种多波段非制冷红外焦 平面，所述焦平面上规则排布或者不规则排布有多个上述能吸收不同波段红 外辐射信号的红外探测器。  As a further aspect of the technical solution of the present invention, the present invention further provides a multi-band uncooled infrared focal plane, wherein the focal plane is regularly arranged or irregularly arranged with a plurality of infrared detections capable of absorbing infrared radiation signals of different wavelength bands. Device.
本发明的有益效果是： 本发明技术方案在现有非制冷红外探测器技术方 案的基础上进一步改进， 增加一电磁波激发层， 由电磁波激发层与入射红外 辐射信号之间发生耦合作用实现光谱选择， 进而实现红外焦平面的多波段红 外成像。 由本发明技术方案构成的红外焦平面具有结构筒单、 体积小、 制作 工艺难度系数低、 低成本、 高成品率等优点， 同时， 由于本发明是在现有成 熟的非制冷探测器工艺上进行的改进， 这就无需再重新设计读出电路， 大大 缩短了研发周期、 降低研发成本和产品成本。 附图说明 图 1为本发明红外探测器的结构示意图； The invention has the beneficial effects that: the technical scheme of the invention is further improved on the basis of the technical scheme of the existing uncooled infrared detector, adding an electromagnetic wave excitation layer, and coupling occurs between the electromagnetic wave excitation layer and the incident infrared radiation signal to realize spectrum selection. , in turn, multi-band infrared imaging of the infrared focal plane. The infrared focal plane formed by the technical scheme of the invention has the advantages of simple structure, small volume, low manufacturing process difficulty coefficient, low cost, high yield, and the like, and at the same time, the invention is carried out on the existing mature uncooled detector technology. Improvements, which eliminate the need to redesign the readout circuitry, significantly reducing development cycles, reducing development costs and product costs. BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic structural view of an infrared detector according to the present invention;
图 2为图 1中的红外探测器的 k-k' 剖面结构示意图；  2 is a schematic cross-sectional view of the k-k' of the infrared detector of FIG. 1;
图 3为本发明中电磁波激发层的阵列型亚波长微结构的第一种构成示意 图；  3 is a schematic view showing a first configuration of an array type sub-wavelength microstructure of an electromagnetic wave excitation layer in the present invention;
图 4为本发明中电磁波激发层的阵列型亚波长微结构的第二种构成示意 图；  Figure 4 is a schematic view showing a second configuration of an array type sub-wavelength microstructure of an electromagnetic wave excitation layer in the present invention;
图 5为本发明中电磁波激发层的阵列型亚波长微结构的第三种构成示意 图；  Figure 5 is a schematic view showing a third constitution of an array type sub-wavelength microstructure of an electromagnetic wave excitation layer in the present invention;
图 6为电磁波耦合中心波长与极化材料、 阵列排布方式和周期之间的关 系示意图；  Figure 6 is a schematic diagram showing the relationship between the wavelength of the electromagnetic wave coupling center and the polarization material, the arrangement of the array, and the period;
图 7a为本发明中的基底结构在 A-A' 方向的截面示意图；  Figure 7a is a schematic cross-sectional view of the base structure in the A-A' direction of the present invention;
图 7b为本发明中的牺牲层在 A-A' 方向的截面示意图；  Figure 7b is a schematic cross-sectional view of the sacrificial layer in the A-A' direction of the present invention;
图 7c为制作牺牲层通孔后牺牲层在 A-A' 方向的截面示意图； 图 7d为本发明中的支撑层在 A-A' 方向的截面示意图；  7c is a schematic cross-sectional view of the sacrificial layer in the A-A' direction after the via hole of the sacrificial layer is formed; FIG. 7d is a schematic cross-sectional view of the support layer in the A-A' direction of the present invention;
图 7e为本发明中的热敏层在 A-A' 方向的截面示意图；  Figure 7e is a schematic cross-sectional view of the heat sensitive layer in the A-A' direction of the present invention;
图 7f 为本发明中的钝化层在 A-A' 方向的截面示意图；  Figure 7f is a schematic cross-sectional view of the passivation layer in the A-A' direction of the present invention;
图 7g制作电极接触孔与热敏层接触孔后钝化层在 k-k' 方向的截面示 意图；  Figure 7g is a cross-sectional view of the passivation layer in the k-k' direction after the electrode contact hole and the contact layer of the heat sensitive layer are formed;
图 7h为本发明中的金属接触电极在 A-A' 方向的截面示意图； 图 为本发明中的电磁波激发层在 A-A' 方向的截面示意图； 图 7 j为本发明中的微桥结构在 A-A' 方向的截面示意图；  7h is a schematic cross-sectional view of the metal contact electrode in the AA' direction of the present invention; FIG. 7 is a schematic cross-sectional view of the electromagnetic wave excitation layer in the AA' direction of the present invention; FIG. 7 j is a microbridge structure in the AA' direction of the present invention. Schematic diagram of the section;
图 8为本发明中的不同波段的探测器构成焦平面的一种排布方式的示意 图； 意图。 Figure 8 is a schematic view showing an arrangement of focal planes of different wavelength detectors in the present invention; intention.
具体实施方式  detailed description
以下结合附图对本发明的原理和特征进行描述， 所举实例只用于解释本 发明， 并非用于限定本发明的范围。  The principles and features of the present invention are described in the following description in conjunction with the accompanying drawings.
作为本发明技术方案的一方面， 如图 1所示， 提供一种红外探测器包括 基底结构、 微桥结构， 基底结构包括含有读出电路的硅村底基底 1、 反射层 2、 两个读出电路电极 6 , 微桥结构包括微桥桥面 5、 两个支撑柱 3、 两个支 撑桥腿 4。  As an aspect of the technical solution of the present invention, as shown in FIG. 1, an infrared detector includes a base structure and a microbridge structure, and the base structure includes a silicon substrate base 1 including a readout circuit, and a reflective layer 2. Out of the circuit electrode 6, the microbridge structure comprises a microbridge deck 5, two support columns 3, and two support legs 4.
反射层位于硅村底基底的一端面上； 两个读出电路电极呈对角线分布， 与反射层位于硅村底基底的同一端面上， 且与反射层互不接触。 两个支撑桥 腿各有一端与微桥桥面相连， 另一端经由两个支撑柱和两个读出电路电极分 别与硅村底基底上的读出电路相连； 使得微桥桥面悬空于反射层之上， 在微 桥桥面与反射层之间形成一光学谐振腔。  The reflective layer is located on one end surface of the base of the silicon substrate; the electrodes of the two readout circuits are diagonally distributed, and the reflective layer is located on the same end surface of the base of the silicon substrate, and is not in contact with the reflective layer. Each of the two support bridge legs has one end connected to the microbridge bridge deck, and the other end is connected to the readout circuit on the silicon substrate base via two support columns and two readout circuit electrodes; the microbridge bridge deck is suspended in the reflection Above the layer, an optical resonant cavity is formed between the microbridge deck and the reflective layer.
其中， 反射层 2的材料一般为金属材料， 这是由于金属材料在红外波段 能够提供非常高的宽语反射率， 具体材料科可采用铝、 镍铬合金、 金、 氮化 钛等。反射层 2与微桥桥面 5之间形成的光学谐振腔 1 3 ,可增强探测器对红 外辐射信号的吸收率， 提高探测器的灵敏度。  Among them, the material of the reflective layer 2 is generally a metal material, because the metal material can provide a very high reflectance in the infrared band, and the material can be aluminum, nickel-chromium alloy, gold, titanium nitride or the like. The optical resonant cavity 13 formed between the reflective layer 2 and the microbridge deck 5 enhances the absorption rate of the detector for the infrared radiation signal and improves the sensitivity of the detector.
支撑柱 3与支撑桥腿 4相互配合， 用来支撑微桥桥面 5 , 实现微桥桥面 5与读出电路之间的电连接， 同时还增大微桥桥面 5和硅村底基底 1之间的 热阻， 提高探测器的响应度。 其中， 支撑柱 3的结构可采用由支撑材料和金 属材料共同构成的碗状结构， 也可采用仅通过金属材料构成的塞状结构。 上 述金属材料一般采用电导率大的铝、 镍、 钛、 钒等金属。 桥腿 4一般由包括 介质支撑层和金属导电层的多层结构构成。  The support column 3 and the support bridge 4 cooperate with each other to support the micro bridge deck 5, to realize the electrical connection between the microbridge deck 5 and the readout circuit, and also to increase the microbridge deck 5 and the silicon substrate base. The thermal resistance between 1 increases the responsiveness of the detector. The structure of the support column 3 may be a bowl-like structure composed of a support material and a metal material, or a plug-like structure composed only of a metal material. The above metal materials generally use metals such as aluminum, nickel, titanium, and vanadium having high electrical conductivity. The bridge leg 4 is generally constructed of a multilayer structure including a dielectric support layer and a metallic conductive layer.
微桥桥面 5 自光学谐振腔 1 3向上依次分布有支撑层 8、 热敏层 9、 钝化 层 1 0、 电磁波激发层 12 , 电磁波激发层 12位于钝化层 1 0之上， 与钝化层 10紧密接触。本发明通过电磁波激发层 12与入射的红外辐射信号 14之间发 生耦合作用来实现光谱选择，进而实现由本发明的探测器构成的红外焦平面 的多波段红外成像。 The microbridge deck 5 is vertically distributed with the support layer 8, the heat sensitive layer 9, the passivation layer 10, and the electromagnetic wave excitation layer 12 from the optical resonator 13. The electromagnetic wave excitation layer 12 is located above the passivation layer 10, and is blunt Layer 10 close contact. The present invention achieves spectral selection by coupling between the electromagnetic wave excitation layer 12 and the incident infrared radiation signal 14, thereby effecting multi-band infrared imaging of the infrared focal plane formed by the detector of the present invention.
参见图 3、 图 4、 图 5, 电磁波激发层 12通过在极化材料上制作阵列型 亚波长微结构实现。  Referring to Figures 3, 4, and 5, the electromagnetic wave excitation layer 12 is realized by fabricating an array type sub-wavelength microstructure on a polarized material.
进一步地， 上述极化材料为能与外部输入的红外辐射信号发生耦合作用 的金属材料或者电介质材料中的一种。 具体地， 金属材料可为金、 银、 铂、 镍、 钛、 钨中的一种； 电介质材料 ( dielectric material )可为碳化硅、 氧化辞、 砷化镓中的一种。  Further, the above polarized material is one of a metal material or a dielectric material capable of coupling with an externally input infrared radiation signal. Specifically, the metal material may be one of gold, silver, platinum, nickel, titanium, and tungsten; and the dielectric material may be one of silicon carbide, oxidized, and gallium arsenide.
参见图 3、 图 4、 图 5, 阵列型亚波长微结构由多个微结构单元 15/16 形状、 尺寸、 和周期决定。  Referring to Figures 3, 4, and 5, the array-type sub-wavelength microstructure is determined by the shape, size, and period of the plurality of microstructure units 15/16.
微结构单元的形状可为矩形、 圓形、 多边形中的一种或多种， 此外， 吸 收波段还与微结构单元的尺寸、 周期的选取有关。 如图 3所示， 若微结构单 元 15为矩形， 则微结构单元 15的尺寸即为边长 L, P为周期； 如图 4、 图 5 所示， 若微结构单元 16为圓形， 则微结构单元 16的尺寸即为半径 R, P为 周期。 一般而言， 周期基本与欲选波段的中心波长相同， 即周期在欲选波段 的中心波长附近选值， 微结构单元的尺寸约为周期的一半。 具体如下： 对于 中波红外波段（即波长为 3μηι~5μηι的波段， 则中心波长为 4μηι)和长波 红外波段（即波长为 8 μηι~14μηι的波段， 则中心波长为 11 μ m ) 而言， 周 期的选取范围可以从几微米到二十几微米，尺寸大小可以从几微米到十几微 米范围内选值。 此外， 还要根据极化材料的选取情况， 在上述周期与尺寸选 值的基础上计算做一些微调， 以使电磁波激发层 12激发波长与所选波段相 对应。 具体地可按如下步骤选取周期： 首先， 根据选取的极化材料的介电常 数获得一基准周期； 其次， 在微结构单元的材料、 形状、 周期、 尺寸均确定 的情况下进行仿真， 若仿真结果显示激发出的波长与所选波段的波长之间存 在偏差， 则微调基准周期后， 再进行仿真， 直至激发出的波长与所选波段相 应为止。 The shape of the microstructure unit may be one or more of a rectangle, a circle, and a polygon. In addition, the absorption band is also related to the selection of the size and period of the microstructure unit. As shown in FIG. 3, if the microstructure unit 15 is rectangular, the size of the microstructure unit 15 is the side length L, and P is a period; as shown in FIG. 4 and FIG. 5, if the microstructure unit 16 is circular, The size of the microstructure unit 16 is the radius R, and P is the period. In general, the period is substantially the same as the center wavelength of the desired band, that is, the period is selected near the center wavelength of the desired band, and the size of the microstructure unit is about half of the period. The details are as follows: For the medium-wave infrared band (that is, the wavelength band of 3μηι~5μηι, the center wavelength is 4μηι) and the long-wave infrared band (that is, the wavelength band of 8 μηι~14μηι, the center wavelength is 11 μm), The period can be selected from a few micrometers to twenty micrometers, and the size can be selected from a few micrometers to a dozen micrometers. In addition, according to the selection of the polarized material, some fine adjustment is calculated on the basis of the above-mentioned period and size selection values, so that the excitation wavelength of the electromagnetic wave excitation layer 12 corresponds to the selected wavelength band. Specifically, the cycle can be selected as follows: First, a reference period is obtained according to the dielectric constant of the selected polarized material; secondly, the material, shape, period, and size of the microstructure unit are determined. In the case of simulation, if the simulation results show that there is a deviation between the excited wavelength and the wavelength of the selected band, after the reference period is fine-tuned, the simulation is performed until the excited wavelength corresponds to the selected band.
作为本发明技术方案的另一方面， 还提供一种制作红外探测器的方法， 具体实现步骤如下，  As another aspect of the technical solution of the present invention, a method for manufacturing an infrared detector is further provided, and the specific implementation steps are as follows.
第一步， 制作基底结构： 利用电子束蒸发、 磁控溅射等方法在硅村底基 底 1上镀制镍铬（NiCr)、 铝 （Al)、 或氮化钛（TiN)等一种或几种金属， 以在硅村底基底 1的同一端面上形成反射层 2和两个读出电路电极 6, 厚度 可为 50 300nm; 然后再通过剥离工艺、 干法刻蚀或者湿法刻蚀方法实现 图形化。作为本步骤的实施例，采用电子束蒸发镀制 N i C r ,形成厚度为 5 Onm ~ 300nm的反射层 2和读出电路 6, 然后再采用湿法刻蚀方法实现图形化， 参 见图 7a  In the first step, a base structure is formed: one of nickel-nickel (NiCr), aluminum (Al), or titanium nitride (TiN) is plated on the silicon substrate 1 by electron beam evaporation, magnetron sputtering, or the like. Several metals are formed on the same end face of the silicon substrate 1 to form a reflective layer 2 and two readout circuit electrodes 6 having a thickness of 50 300 nm; and then by a lift-off process, a dry etching or a wet etching method Implement graphics. As an embodiment of the present step, N i C r is formed by electron beam evaporation to form a reflective layer 2 and a readout circuit 6 having a thickness of 5 Onm to 300 nm, and then patterned by a wet etching method, see FIG. 7a.
第二步， 制作牺牲层 7, 参见图 7b。 本步骤根据选材不同， 有以下两种 实现方式： 若选用光敏型聚酰亚胺或者非光敏型聚酰亚胺（PI: polyimide), 则可对 PI 采用旋涂方法制作牺牲层 7; 若选用二氧化硅（Si02)或多晶硅 ( oly-silicon ), 则对二氧化硅或者多晶硅采用化学气相沉积的方法制作 牺牲层 7。 牺牲层 7的厚度为 1μηι~ 3μηι, 作为本步骤的一个实施例， 牺牲层 7厚度为 2.5μηι In the second step, a sacrificial layer 7 is produced, see Figure 7b. This step is different depending on the material selected. There are two ways to achieve this: If photosensitive polyimide or non-photosensitive polyimide (PI: polyimide) is used, the sacrificial layer 7 can be formed by spin coating on PI; Silica (SiO 2 ) or polycrystalline ( oly-silicon ), the sacrificial layer 7 is formed by chemical vapor deposition of silicon dioxide or polycrystalline silicon. The thickness of the sacrificial layer 7 is 1 μm to 3 μm. As an embodiment of this step, the thickness of the sacrificial layer 7 is 2.5 μm.
第三步， 制作牺牲层通孔 71, 参见图 7c。 本步骤根据制作牺牲层 7的 材料的不同， 有以下两种实现方式： 若选用光敏型 PI制作的牺牲层 7, 则通 过光刻方法在牺牲层 7上制作牺牲层 7通孔； 若选用非光敏型 PI、 二氧化硅 或者多晶硅制成的牺牲层 7, 则通过 RIE干法刻蚀方法在牺牲层 7上制作牺 牲层 7通孔。 其中， RIE干法刻蚀气体一般为氧气（02)、 三氟曱烷（CHF3)、 四氟化碳（CF4)、 六氟化硫（SF6)等。 通过优化刻蚀工艺， 使得牺牲层通孔 71的侧壁具有一定倾斜角度， 以利于台阶覆盖， 降低点连接失效概率， 提高 微桥结构的强度和良率。 In the third step, a sacrificial layer via 71 is formed, see Fig. 7c. This step has two implementations depending on the material of the sacrificial layer 7: If the sacrificial layer 7 made of photosensitive PI is used, the via hole of the sacrificial layer 7 is formed on the sacrificial layer 7 by photolithography; A sacrificial layer 7 made of photosensitive PI, silicon dioxide or polysilicon is used to form a via hole of the sacrificial layer 7 on the sacrificial layer 7 by a RIE dry etching method. The RIE dry etching gas is generally oxygen (0 2 ), trifluorodecane (CHF 3 ), carbon tetrafluoride (CF 4 ), sulfur hexafluoride (SF 6 ), or the like. By optimizing the etching process, the sidewall of the sacrificial layer via 71 has a certain inclination angle to facilitate step coverage, reducing the probability of point connection failure, and improving The strength and yield of the microbridge structure.
第四步， 制作微桥结构 100中的支撑层 8: 使用氮化硅（SiNx)、 二氧化 硅（Si02)、 氮氧化硅（SiON)、 或碳化硅（SiC) 中的任一种材料， 采用化学 气相沉积方法制作形成支撑层 8, 支撑层 8厚度为 50nm~ 300nm,参见图 7d。 另外， 需要说明的是， 若上述第二步制作牺牲层 7选用的是 Si02, 则本步骤 中， 不能与牺牲层 7选用相同的材料， 即不能选用 Si02, 这样可以防止在后 续释放微桥结构时， 对支撑层 8产生影响。 In the fourth step, the support layer 8 in the microbridge structure 100 is fabricated: using any one of silicon nitride (SiNx), silicon dioxide (SiO 2 ), silicon oxynitride (SiON), or silicon carbide (SiC). The support layer 8 is formed by a chemical vapor deposition method, and the thickness of the support layer 8 is 50 nm to 300 nm, see FIG. 7d. In addition, if the second step of the sacrificial layer 7 is selected as Si0 2 , in this step, the same material cannot be selected as the sacrificial layer 7, that is, Si0 2 cannot be selected, which can prevent the subsequent release of micro. In the case of the bridge structure, the support layer 8 is affected.
第五步， 制作微桥结构 100中的热敏层 9, 本步骤根据选材不同， 有以 下两种实现方式： 若选用氧化钒（V0J, 则可对 V0X采用反应溅射方法镀制 形成热敏层 9; 若选用无定形硅（ a -Si ), 则可对 a -Si采用等离子体增强 化学气相沉积法镀制形成热敏层 9, 热敏层 9的厚度为 50腿〜 300nm。 然后 再通过 RIE干法刻蚀实现图形化， 参见图 7e。 In the fifth step, the thermosensitive layer 9 in the microbridge structure 100 is fabricated. According to different materials, there are two implementation modes: If vanadium oxide (V0J is used, V0 X can be formed by reactive sputtering). Sensitive layer 9; If amorphous silicon (a-Si) is used, the heat sensitive layer 9 can be formed by plasma enhanced chemical vapor deposition of a-Si, and the thickness of the heat sensitive layer 9 is 50 legs to 300 nm. Patterning is then performed by RIE dry etching, see Figure 7e.
第六步， 制作微桥结构 100中的钝化层 10: 使用氮化硅（SiNx)、 二氧 化硅（Si02)、 氮氧化硅（SiON)、 或碳化硅（SiC) 中的任一种材料， 采用化 学气相淀积方法制作形成钝化层 10, 钝化层 10厚度为 50腿〜 300nm, 参见 图 7f。 另外， 需要说明的是， 若上述第二步制作牺牲层 7选用的是 Si02, 则 本步骤中， 也不能与牺牲层 7选用相同的材料， 即不能选用 Si02, 同样可防 止在后续释放微桥结构时， 对钝化层 10产生影响。 In the sixth step, the passivation layer 10 in the microbridge structure 100 is fabricated: using any one of silicon nitride (SiN x ), silicon dioxide (SiO 2 ), silicon oxynitride (SiON), or silicon carbide (SiC). The material is formed by a chemical vapor deposition method to form a passivation layer 10 having a thickness of 50 legs to 300 nm, see FIG. 7f. In addition, if the second step of the sacrificial layer 7 is made of Si0 2 , the same material may not be selected for the sacrificial layer 7 in this step, that is, Si0 2 cannot be selected, and the subsequent release can be prevented. In the case of a microbridge structure, the passivation layer 10 is affected.
第七步， 制作读出电路电极接触孔 19和热敏层接触孔 20: 利用由氧气 (02) 与三氟甲烷（CHF3) 混合构成的刻蚀气体， 采用 RIE干法刻蚀出读出 电路电极接触孔 19和热敏层接触孔 20, 参见图 7g。 In the seventh step, the readout circuit electrode contact hole 19 and the heat sensitive layer contact hole 20 are formed: an etching gas composed of a mixture of oxygen (0 2 ) and trifluoromethane (CHF 3 ) is used, and the RIE is used for etching and reading. The circuit electrode contact hole 19 and the heat sensitive layer contact hole 20 are shown, see Fig. 7g.
第八步，制作金属接触电极层 11:使用钛（Ti )、铝（Al)、氮化钛（TiN)、 钒（V) 中的任一种金属材料， 采用电子束蒸发或磁控溅射制作金属接触电 极层 11, 厚度 50nm~ 200nm; 然后再通过 RIE干法刻蚀实现图形化， 刻蚀气 体一般可为氩气（Ar)、 三氟甲烷（CHF3)、 三氯化硼（BC13)、 氯气（Cl2)等， 参见图 7h。 In the eighth step, the metal contact electrode layer 11 is formed: using any one of titanium (Ti), aluminum (Al), titanium nitride (TiN), and vanadium (V), using electron beam evaporation or magnetron sputtering The metal contact electrode layer 11 is formed to have a thickness of 50 nm to 200 nm; and then patterned by RIE dry etching, and the etching gas is generally argon (Ar), trifluoromethane (CHF 3 ), or boron trichloride (BC1). 3 ), chlorine (Cl 2 ), etc. See Figure 7h.
第九步，制作微桥结构 100中的电磁波激发层 12: 对极化材料采用磁控 溅射方法制作或化学气相沉积方法形成电磁波激发层 12,然后再利用干法刻 蚀方法或者湿法刻蚀方法实现图形化， 形成阵列型亚波长微结构； 作为本步 骤的一个实施例对金（Au)采用磁控溅射方法制作，形成厚度为 50nm~ 200nm 的电磁波激发层 12; 然后再利用碘化钾（ KI )与碘（ 12 )的溶液湿法刻蚀方 法实现图形化。 不同的探测器上制作的微结构的尺寸和周期根据不同的响应 波段进行设计， 从而实现多波段成像， 参见图 7i。 In the ninth step, the electromagnetic wave excitation layer 12 in the microbridge structure 100 is fabricated: the electromagnetic wave excitation layer 12 is formed by a magnetron sputtering method or a chemical vapor deposition method for the polarized material, and then the dry etching method or the wet etching method is used. The etching method is patterned to form an array type sub-wavelength microstructure; as an embodiment of this step, gold (Au) is formed by magnetron sputtering to form an electromagnetic wave excitation layer 12 having a thickness of 50 nm to 200 nm; and then potassium iodide is used. (KI) and iodine (12) was patterned to achieve a wet etching method. The size and period of the microstructures fabricated on different detectors are designed according to different response bands to achieve multi-band imaging, see Figure 7i.
第十步， 刻蚀微桥结构 100, 去除牺牲层 7, 释放微桥结构 100: 首先采 用光刻方法实现 桥结构的图形化；然后利用 CHF3与 02混合干法刻蚀钝化层 10和支撑层 8, 直到露出牺牲层 7为止， 至此刻蚀出敫桥结构 100; 最后再 根据制作牺牲层 7的选材， 采用下列三种方式去除牺牲层 7: 若选用光敏型 聚酰亚胺或者非光敏型聚酰亚胺制成牺牲层 7, 则采用氧等离子体干法去除 牺牲层 7; 若采用 Si02制成的牺牲层 7, 则利用氟化氢（HF) 气体去除牺牲 层 7; 若采用多晶硅制成的牺牲层 7, 则利用氟化氙（XeF2)去除牺牲层 7。 经上述步骤， 即可形成微桥结构 100, 参见图 7j。 In the tenth step, the microbridge structure 100 is etched, the sacrificial layer 7 is removed, and the microbridge structure 100 is released: first, the lithography method is used to realize the patterning of the bridge structure; then the passivation layer 10 is dry etched by using CHF 3 and 0 2 And the support layer 8 until the sacrificial layer 7 is exposed, thereby etching the truss structure 100; finally, according to the material for preparing the sacrificial layer 7, the sacrificial layer 7 is removed in the following three ways: if photosensitive polyimide or If the sacrificial layer 7 is made of non-photosensitive polyimide, the sacrificial layer 7 is removed by oxygen plasma dry method; if the sacrificial layer 7 made of SiO 2 is used , the sacrificial layer 7 is removed by using hydrogen fluoride (HF) gas; The sacrificial layer 7 made of polysilicon is removed by using xenon fluoride (XeF 2 ). Through the above steps, the microbridge structure 100 can be formed, see Fig. 7j.
作为本发明技术方案再一方面，本发明还提供一种多波段非制冷红外焦 平面， 焦平面上规则排布或者不规则排布有多个上述能吸收不同波段红外辐 射信号的红外探测器。 采用本发明的技术方案， 只需要单个焦平面， 通过在 焦平面上的不同探测器上制作不同形状和阵列的亚波长微结构即可实现多 波段成像。  As still another aspect of the technical solution of the present invention, the present invention further provides a multi-band uncooled infrared focal plane in which a plurality of infrared detectors capable of absorbing infrared radiation signals of different wavelength bands are regularly arranged or irregularly arranged on a focal plane. With the technical solution of the present invention, only a single focal plane is required, and multi-band imaging can be realized by fabricating sub-wavelength microstructures of different shapes and arrays on different detectors on the focal plane.
不同波段响应的探测器可采用不同的排布方式，如双波段非制冷焦平面 201/202的中波段红外探测器 17和长波段红外探测器 18可有如下两种排布 方式：  Different wavelength response detectors can be arranged in different ways. For example, the mid-band infrared detector 17 and the long-band infrared detector 18 of the dual-band uncooled focal plane 201/202 can be arranged in two ways:
如图 8所示， 双波段非制冷焦平面 201采用棋盘形式排列， 分辨率在水 平和垂直两个方向上按同样比例降低。 也就是， 若吸收中波段的红外辐射信 号，则在水平和垂直两个方向每隔一个长波段红外探测器 18 ,提取一个经中 波段红外探测器 17采集获得的图像， 与全部分布中波段红外探测器 17的焦 平面相比， 分辨率在水平和垂直方向上均降低了一半。 As shown in Figure 8, the dual-band uncooled focal plane 201 is arranged in a checkerboard format with a resolution in the water. The same ratio is reduced in both the horizontal and vertical directions. That is, if the infrared radiation signal in the middle band is absorbed, every other long-wavelength infrared detector 18 in the horizontal and vertical directions extracts an image acquired by the mid-band infrared detector 17, and the entire distribution band infrared The resolution of the detector 17 is reduced by half in both the horizontal and vertical directions compared to the focal plane of the detector 17.
如图 9所示， 双波段非制冷焦平面 202采用在水平方向上隔行排列的方 式排布， 则分辨率在水平方向上降低一半， 垂直方向上保持不变。 也就是， 若吸收长波段红外辐射信号， 则在水平方向上每隔一个中波段红外探测器 17 , 提取一个经长波段红外探测器 18采集获得的图像， 与全部分布长波段 红外探测器 18 的焦平面相比， 分辨率在水平方向上降低了一半， 但是垂直 方向上分辨率不改变。 同理， 也可在垂直方向上隔行排列形成红外焦平面。  As shown in Fig. 9, the two-band uncooled focal plane 202 is arranged in an interlaced manner in the horizontal direction, and the resolution is reduced by half in the horizontal direction and remains unchanged in the vertical direction. That is, if the long-band infrared radiation signal is absorbed, every other mid-band infrared detector 17 in the horizontal direction extracts an image acquired by the long-band infrared detector 18, and all the long-band infrared detectors 18 are distributed. Compared to the focal plane, the resolution is reduced by half in the horizontal direction, but the resolution in the vertical direction does not change. Similarly, the infrared focal plane can also be formed by interlacing in the vertical direction.
上述图 8、图 9所示的红外焦平面上的中波段红外探测器 17与长波段红 外探测器 18均为规则排布， 此外， 多个中波段红外探测器 17和多个长波段 红外探测器 18还可不规则排布。 在需要中波段红外辐射信号图像时， 提取 经中波段红外探测器 17获取的图像信息； 在需要长波段红外辐射信号图像 时， 则提取经由长波段红外探测器 18获取的图像信息； 或者也可以同时对 中波段和长波段红外辐射成像， 然后再通过后续的图像处理分别获得中波红 外辐射图像和长波红外辐射图像，具体方法如下： 因为在焦平面制作完成后， 其上分布的中波段红外探测器 17与长波段红外探测器 18的位置关系是固定 的， 这样在得到整个焦平面获取的图像数据后， 可根据需要， 比如需要中波 段红外辐射信号图像， 则从获得的焦平面图像数据中提取出由焦平面上分布 的中波段红外探测器 Π获得的图像信息构成中波红外辐射图像， 若需要长 波段红外辐射信号图像， 则从获得的焦平面图像数据中提取出由焦平面上分 布的长波段红外探测器 18获得的图像信息构成长波红外辐射图像。  The medium-band infrared detector 17 and the long-band infrared detector 18 on the infrared focal plane shown in FIG. 8 and FIG. 9 are regularly arranged, and in addition, a plurality of medium-band infrared detectors 17 and a plurality of long-wavelength infrared detectors are provided. The devices 18 can also be arranged irregularly. When the mid-band infrared radiation signal image is needed, the image information acquired by the mid-band infrared detector 17 is extracted; when the long-band infrared radiation signal image is needed, the image information acquired by the long-band infrared detector 18 is extracted; or At the same time, the mid-band and long-band infrared radiation imaging, and then the subsequent image processing to obtain the medium-wave infrared radiation image and the long-wave infrared radiation image respectively, the specific method is as follows: Because the focal plane is distributed after the mid-band infrared The positional relationship between the detector 17 and the long-band infrared detector 18 is fixed, so that after obtaining the image data acquired by the entire focal plane, the focal plane image data obtained from the obtained infrared-radiation signal image can be obtained as needed. The image information obtained by the mid-band infrared detector 分布 distributed on the focal plane is extracted to form a medium-wave infrared radiation image. If a long-band infrared radiation signal image is required, the focal plane image data obtained is extracted from the focal plane image. Distributed by the long-band infrared detector 18 The image information constitutes a long-wave infrared radiation image.
本发明通过在探测器表面制作亚波长微结构来实现多波段成像，但是本 方法不仅限于非制冷红外探测器， 还可应用于其它类型探测成像技术中， 例 如在制冷型探测器、 CMOS传感器、 CCD传感器等成像芯片上均可以使用， 以 实现多波段成像。 The invention realizes multi-band imaging by making a sub-wavelength microstructure on the surface of the detector, but the method is not limited to the uncooled infrared detector, and can be applied to other types of detection imaging techniques, for example. It can be used on imaging chips such as refrigerated detectors, CMOS sensors, and CCD sensors to achieve multi-band imaging.
以上所述仅为本发明的较佳实施例， 并不用以限制本发明， 凡在本发明 的精神和原则之内， 所作的任何修改、 等同替换、 改进等， 均应包含在本发 明的保护范围之内。  The above is only the preferred embodiment of the present invention, and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc., which are within the spirit and scope of the present invention, should be included in the protection of the present invention. Within the scope.

Claims

权 利 要 求 书 Claim
1. 一种红外探测器， 包括基底结构、 微桥结构， 所述基底结构 包括含有读出电路的硅村底基底、 两个读出电路电极、反射层， 所述 微桥结构包括微桥桥面、 两个支撑柱、 两个支撑桥腿， 其中， An infrared detector comprising a base structure and a microbridge structure, the base structure comprising a silicon substrate substrate including a readout circuit, two readout circuit electrodes, and a reflective layer, wherein the microbridge structure comprises a microbridge Face, two support columns, two support bridge legs, among them,
所述反射层位于所述硅村底基底的一端面上；所述两个读出电路 电极呈对角线分布， 与所述反射层位于所述硅村底基底的同一端面 上， 且与所述反射层互不接触；  The reflective layer is located on one end surface of the silicon substrate; the two readout circuit electrodes are diagonally distributed, and the reflective layer is located on the same end surface of the silicon substrate substrate, and The reflective layers are not in contact with each other;
所述两个支撑桥腿各有一端与所述微桥桥面相连，另一端经由所 述两个支撑柱和两个读出电路电极分别与所述硅村底基底上的读出 电路相连； 使得所述微桥桥面悬空于所述反射层之上， 在所述微桥桥 面与所述反射层之间形成一光学谐振腔；  The two supporting bridge legs each have one end connected to the microbridge bridge deck, and the other end is connected to the readout circuit on the silicon substrate base via the two support columns and two readout circuit electrodes respectively; Disposing the microbridge bridge surface over the reflective layer, forming an optical resonant cavity between the microbridge bridge surface and the reflective layer;
所述微桥桥面自所述光学谐振腔向上依次分布有支撑层、 热敏 层、 钝化层， 其特征在于， 所述微桥桥面还包括一电磁波激发层， 所 述电磁波激发层位于所述钝化层之上， 与所述钝化层紧密接触。  The microbridge bridge surface is provided with a support layer, a heat sensitive layer and a passivation layer in this order from the optical resonant cavity, wherein the microbridge bridge surface further comprises an electromagnetic wave excitation layer, and the electromagnetic wave excitation layer is located Above the passivation layer, in close contact with the passivation layer.
2. 按照权利要求 1所述的红外探测器， 其特征在于， 所述电磁  2. The infrared detector according to claim 1, wherein said electromagnetic
3. 按照权利要求 2所述的红外探测器， 其特征在于， 所述极化 材料为能与外部输入的红外辐射信号发生耦合作用的金属材料或者 电介质材料中的一种。 The infrared detector according to claim 2, wherein the polarized material is one of a metal material or a dielectric material capable of coupling with an externally input infrared radiation signal.
4. 按照权利要求 3所述的红外探测器， 其特征在于，  4. The infrared detector according to claim 3, wherein
所述金属材料为金、 银、 铂、 镍、 钛、 钨中的一种；  The metal material is one of gold, silver, platinum, nickel, titanium, and tungsten;
所述电介质材料为碳化硅、 氧化辞、 砷化镓中的一种。  The dielectric material is one of silicon carbide, oxidized, and gallium arsenide.
5. 按照权利要求 2所述的红外探测器， 其特征在于， 所述阵列 型亚波长微结构由多个微结构单元规则排列形成。 5. The infrared detector according to claim 2, wherein the array type sub-wavelength microstructure is formed by a regular arrangement of a plurality of microstructure units.
6. 按照权利要求 5所述的红外探测器， 其特征在于， 所述微结 构单元的形状为矩形、 圓形、 多边形中的一种或多种。 The infrared detector according to claim 5, wherein the micro-structure unit has one or more of a rectangular shape, a circular shape, and a polygonal shape.
7. 按照权利要求 5或 6所述的红外探测器， 其特征在于， 所述微结构单元的周期基本与欲选波段的中心波长相同，所述微 结构单元的尺寸约为周期的一半。  The infrared detector according to claim 5 or 6, wherein the period of the microstructure unit is substantially the same as the center wavelength of the wavelength band to be selected, and the size of the microstructure unit is about half of the period.
8. 一种制作红外探测器的方法， 其特征在于，  8. A method of fabricating an infrared detector, characterized in that
第一步， 制作基底结构： 利用电子束蒸发或者磁控溅射方法在硅 村底基底上镀制镍铬、 铝、 或氮化钛中的一种或几种金属， 以在所述 硅村底基底的同一端面上形成反射层和两个读出电路电极，再通过剥 离工艺、 干法刻蚀或者湿法刻蚀方法实现图形化；  The first step is to fabricate a base structure: one or more metals of nickel chromium, aluminum, or titanium nitride are plated on the silicon substrate by electron beam evaporation or magnetron sputtering to the silicon village. Forming a reflective layer and two readout circuit electrodes on the same end surface of the base substrate, and then performing patterning by a lift-off process, a dry etching or a wet etching method;
第二步， 制作牺牲层： 对光敏型聚酰亚胺或者非光敏型聚酰亚胺 采用旋涂方法来制作所述牺牲层； 或者， 对二氧化硅或者多晶硅采用 化学气相沉积方法来制作所述牺牲层；  In the second step, a sacrificial layer is formed: a sacrificial layer is formed by a spin coating method for a photosensitive polyimide or a non-photosensitive polyimide; or a chemical vapor deposition method is used for fabricating silicon dioxide or polycrystalline silicon. Sacrifice layer
第三步， 制作牺牲层通孔： 通过光刻方法在由光敏型聚酰亚胺制 成的所述牺牲层上制作牺牲层通孔； 或者， 通过干法刻蚀方法在由非 光敏型聚酰亚胺、二氧化硅或者多晶硅制成的所述牺牲层上制作牺牲 层通孑 L;  In the third step, a sacrificial layer via hole is formed: a sacrificial layer via hole is formed on the sacrificial layer made of photosensitive polyimide by a photolithography method; or, by a dry etching method, a non-photosensitive type poly is formed. Making a sacrificial layer through the sacrificial layer made of imide, silicon dioxide or polysilicon;
第四步， 制作微桥结构中的支撑层： 使用氮化硅、 氧化硅、 氮氧 化硅、或碳化硅中的任一种材料， 采用化学气相沉积方法制作形成所 述支撑层；  The fourth step is to fabricate a support layer in the microbridge structure: using a material of silicon nitride, silicon oxide, silicon oxynitride, or silicon carbide, forming the support layer by chemical vapor deposition;
第五步， 制作微桥结构中的热敏层： 对氧化钒采用反应溅射方法 镀制形成所述热敏层； 或者， 对无定形硅采用等离子体增强化学气相 沉积方法镀制形成所述热敏层； 然后再通过干法刻蚀实现图形化； 第六步， 制作微桥结构中的钝化层： 使用氮化硅、 氧化硅、 氮氧 化硅、或碳化硅中的任一种材料， 采用化学气相淀积方法制作形成所 述钝化层； In the fifth step, the heat sensitive layer in the microbridge structure is formed: the heat sensitive layer is formed by reactive sputtering of vanadium oxide; or the amorphous silicon is formed by plasma enhanced chemical vapor deposition. a heat sensitive layer; then patterned by dry etching; The sixth step is to fabricate a passivation layer in the microbridge structure: using a material of silicon nitride, silicon oxide, silicon oxynitride, or silicon carbide, forming the passivation layer by a chemical vapor deposition method;
第七步， 制作读出电路电极接触孔和热敏层接触孔： 利用由氧气 与三氟甲烷混合构成的刻蚀气体，采用干法刻蚀方法形成读出电路电 极接触孔和热敏层接触孔；  In the seventh step, the contact hole of the readout circuit and the contact hole of the heat sensitive layer are formed: by using an etching gas composed of a mixture of oxygen and trifluoromethane, the contact hole of the readout circuit and the contact of the heat sensitive layer are formed by a dry etching method. Hole
第八步， 制作金属接触电极层： 使用钛、 铝、 氮化钛、 钒中的任 一种金属， 采用电子束蒸发或磁控溅射制作所述金属接触电极层， 然 后再通过干法刻蚀方法实现图形化；  In the eighth step, the metal contact electrode layer is formed: using the metal of any one of titanium, aluminum, titanium nitride and vanadium, the metal contact electrode layer is formed by electron beam evaporation or magnetron sputtering, and then dried by dry etching. The etch method is graphically implemented;
第九步， 制作微桥结构中的电磁波激发层： 采用磁控溅射方法或 化学气相沉积方法制作形成所述电磁波激发层，然后再利用干法刻蚀 方法或者湿法刻蚀方法实现图形化， 形成阵列型亚波长微结构；  In the ninth step, the electromagnetic wave excitation layer in the microbridge structure is fabricated: the electromagnetic wave excitation layer is formed by a magnetron sputtering method or a chemical vapor deposition method, and then patterned by a dry etching method or a wet etching method. Forming an array type subwavelength microstructure;
第十步， 刻蚀出微桥结构， 去除所述牺牲层， 释放微桥结构： 先 采用干法刻蚀方法刻蚀出 桥结构； 再采用下列方法去除所述牺牲 层：利用氧等离子体干法去除由光敏型聚酰亚胺或者非光敏型聚酰亚 胺制成的所述牺牲层； 或者， 利用氟化氢气体去除由二氧化硅制成的 所述牺牲层； 或者， 利用氟化氙去除由多晶硅制成的所述牺牲层。  In the tenth step, the microbridge structure is etched, the sacrificial layer is removed, and the microbridge structure is released: the bridge structure is first etched by dry etching; the sacrificial layer is removed by the following method: using oxygen plasma to dry Removing the sacrificial layer made of photosensitive polyimide or non-photosensitive polyimide; or removing the sacrificial layer made of silicon dioxide using hydrogen fluoride gas; or removing it by using cesium fluoride The sacrificial layer made of polysilicon.
9. 按照权利要求 8所述的制作红外探测器的方法，其特征在于， 所述电磁波激发层的厚度为 5 0nm ~ 200nm。 9. The method of fabricating an infrared detector according to claim 8, wherein the electromagnetic wave excitation layer has a thickness of 50 nm to 200 nm.
10.—种多波段非制冷红外焦平面， 其特征在于， 所述焦平面上 规则排布或者不规则排布有多个如权利要求 1至 7任一项所述的能吸 收不同波段红外辐射信号的红外探测器。  10. A multi-band uncooled infrared focal plane, characterized in that the focal plane is regularly arranged or irregularly arranged with a plurality of infrared radiations capable of absorbing different wavelength bands according to any one of claims 1 to 7. Infrared detector for signals.
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014053389A1 (en) * 2012-10-01 2014-04-10 Siemens Aktiengesellschaft Sensor arrangement and production method
CN110160658A (en) * 2019-05-17 2019-08-23 中国科学院上海技术物理研究所 It is a kind of to etch enhanced uncooled ir thin film detector and preparation method
CN111584671A (en) * 2020-04-23 2020-08-25 中国科学院上海技术物理研究所 High-performance narrow-band infrared detector based on microcavity resonance frequency selection
CN112456434A (en) * 2020-11-05 2021-03-09 南京大学 Method for preparing terahertz detector based on suspended microbridge technology
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Publication number Priority date Publication date Assignee Title
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004170508A (en) * 2002-11-18 2004-06-17 Canon Inc Micro structural body
US20070262256A1 (en) * 2003-10-09 2007-11-15 Ocas Corp. Bolometric Infrared Sensor Having Two-Layer Structure and Method for Manufacturing the Same
US7629582B2 (en) * 2006-10-24 2009-12-08 Raytheon Company Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors
CN101713688A (en) * 2009-12-11 2010-05-26 中国电子科技集团公司第十三研究所 MEMS non-refrigerated two-band infrared detector and preparation method thereof
CN101881664A (en) * 2009-05-08 2010-11-10 世纪晶源科技有限公司 Air adiabatic diaphragm type infrared sensor
CN101881666A (en) * 2009-05-08 2010-11-10 世纪晶源科技有限公司 Film-type pyroelectric infrared sensor and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1915796A (en) * 2006-09-08 2007-02-21 中国科学院上海微***与信息技术研究所 Light reading out, not refrigerant infrared imaging array device, and fabricating metod
CN101774530B (en) * 2010-02-03 2012-06-06 电子科技大学 Microbolometer and preparation method thereof
CN202066596U (en) * 2010-12-01 2011-12-07 烟台艾睿光电科技有限公司 Infrared detector and multiband uncooled infrared focal plane

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004170508A (en) * 2002-11-18 2004-06-17 Canon Inc Micro structural body
US20070262256A1 (en) * 2003-10-09 2007-11-15 Ocas Corp. Bolometric Infrared Sensor Having Two-Layer Structure and Method for Manufacturing the Same
US7629582B2 (en) * 2006-10-24 2009-12-08 Raytheon Company Dual band imager with visible or SWIR detectors combined with uncooled LWIR detectors
CN101881664A (en) * 2009-05-08 2010-11-10 世纪晶源科技有限公司 Air adiabatic diaphragm type infrared sensor
CN101881666A (en) * 2009-05-08 2010-11-10 世纪晶源科技有限公司 Film-type pyroelectric infrared sensor and preparation method thereof
CN101713688A (en) * 2009-12-11 2010-05-26 中国电子科技集团公司第十三研究所 MEMS non-refrigerated two-band infrared detector and preparation method thereof

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CN110160658B (en) * 2019-05-17 2023-11-07 中国科学院上海技术物理研究所 Etching enhancement type uncooled infrared film detector and preparation method thereof
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CN114389046A (en) * 2022-01-05 2022-04-22 电子科技大学 Infrared electromagnetic periodic structure with selective absorption and beam anisotropic reflection functions
CN114389046B (en) * 2022-01-05 2023-05-30 电子科技大学 Infrared electromagnetic periodic structure with selective absorption and beam anisotropic reflection functions
CN114485951B (en) * 2022-01-13 2024-01-30 北京安酷智芯科技有限公司 Planar image sensor
CN114485951A (en) * 2022-01-13 2022-05-13 北京安酷智芯科技有限公司 Plane image sensor
CN115060371B (en) * 2022-07-27 2022-11-01 北京中科海芯科技有限公司 Micro-bolometer, manufacturing method and infrared detector
CN115060371A (en) * 2022-07-27 2022-09-16 北京中科海芯科技有限公司 Micro-bolometer, manufacturing method and infrared detector
CN116793504A (en) * 2023-08-23 2023-09-22 北京中科海芯科技有限公司 Novel thermal radiation infrared detector and manufacturing method thereof

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