CN106340561A - Novel uncooled infrared focal plane detector pixel and fabrication method thereof - Google Patents
Novel uncooled infrared focal plane detector pixel and fabrication method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 101
- 239000002184 metal Substances 0.000 claims abstract description 101
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 72
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 238000010521 absorption reaction Methods 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 510
- 239000011241 protective layer Substances 0.000 claims description 102
- 239000010409 thin film Substances 0.000 claims description 76
- 210000003141 lower extremity Anatomy 0.000 claims description 32
- 239000000523 sample Substances 0.000 claims description 27
- 239000010408 film Substances 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 13
- 230000002745 absorbent Effects 0.000 claims description 12
- 239000002250 absorbent Substances 0.000 claims description 12
- 239000004642 Polyimide Substances 0.000 claims description 9
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 5
- 239000002071 nanotube Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 238000004380 ashing Methods 0.000 claims description 4
- 238000000992 sputter etching Methods 0.000 claims description 4
- 239000012467 final product Substances 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 11
- 230000004044 response Effects 0.000 abstract description 3
- 238000002835 absorbance Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000004043 responsiveness Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910003978 SiClx Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005616 pyroelectricity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a novel uncooled infrared focal plane detector pixel and a fabrication method thereof and belongs to the uncooled infrared focal plane detector technical field. The novel uncooled infrared focal plane detector pixel comprises three layers of structures which are located on a semiconductor substrate sequentially from bottom to top, wherein the first layer of bridge structure includes a metal reflection layer, an insulating dielectric layer, a first supporting layer, a first supporting layer protection layer, a first metal electrode layer and a first silicon nitride dielectric layer, the second layer of thermal conversion structure includes a second supporting layer, a second supporting layer protection layer, a second metal electrode layer, a second silicon nitride dielectric layer, a thermal sensitive layer and a heat sensitive layer protection layer, and the third layer of absorption structure includes a third supporting layer, an absorption layer and an absorption protection layer. The invention also discloses a fabrication method of the novel uncooled infrared focal plane detector pixel. With the novel uncooled infrared focal plane detector pixel provided by the invention adopted, the absorption rate of infrared radiation can be obviously improved, the response rate of a detector can be improved, and a foundation can be laid for the manufacture of larger-array and smaller-pixel detectors.
Description
Technical field
The present invention relates to a kind of new non-refrigerated infrared focal plane probe pixel and preparation method thereof, belong to non-brake method red
Outer focus planardetector art field.
Background technology
Progressively reduce with pixel dimension, the target emanation energy that single sensor is absorbed substantially reduces.In order to maintain
Relatively uniform transducer sensitivity is it is necessary to lift the responsiveness of sensor.The responsiveness of sensor depends on pixel dimension, biography
Thermal conductivity between sensor and substrate, the optical absorption efficiency of sensor and thermo-sensitive material performance.In conventional double micro-bridge structure, the
One layer is the bridge lower limb supporting construction that elongated bridge lower limb is constituted, in order to lift the thermal conductivity between sensor and substrate.The second layer comprises to aoxidize
Vanadium layers, in order to absorb Target Infrared Radiation and to be changed into electrical signal.When infra-red radiation incides infrared detector pixel, remove
Top layer has absorption outer to infra-red radiation, and bottom bridge lower limb also partially absorbs effect for incident infra-red radiation, but for top layer
Temperature rise contribution is limited.Reducing further with pixel dimension, need to lift the absorption efficiency of top level structure further.
U.S. raytheon once applied for a patent (United States Patent (USP): us 6690014b1).The technical scheme that this patent adopts is adopted
Use double-deck micro-bridge structure, ground floor is support bridge lower limb, the second layer is heat-sensitive layer amorphous silicon membrane.Although this structure can be effective
Detect infra-red radiation, but when pixel reduces, the area of heat-sensitive layer reduces therewith, thus it is very bright to lead to absorbance can decline
Aobvious.So this structure is unfavorable for making the little pixel detector of high responsiveness.Additionally, drs patent (United States Patent (USP):
Us891161b2) using the structure of similar raytheon, make double-decker, the heat insulation bridge lower limb of ground floor adopts snakelike knot
Structure, the second layer makes hanging detector, and double-layer structure forms two resonator cavitys with substrate.This structure is with the profit of raytheon patent
Disadvantage is identical.
Uncooled infrared detection technology is that the infra-red radiation (ir) without refrigeration system object to external world is perceived and turned
The chemical conversion signal of telecommunication, after treatment in the technology of display terminal output, can be widely applied to national defence, space flight, medical science, production monitoring etc.
Various fields.Non-refrigerated infrared focal plane probe can be worked due to it under room temperature state, and has light weight, volume
Little, life-span length, low cost, power are little, startup is fast and the advantages of good stability, meet civilian infrared system and partly military red
External system is to Long Wave Infrared Probe in the urgent need to developing swift and violent, just towards highly sensitive, wide spectrum, high-resolution in recent years
Rate, low-power consumption, miniaturization and intelligentized direction are developed.Non-refrigerated infrared detector mainly includes bolometer, pyroelectricity
With thermopile detector etc., micro-metering bolometer (micro-bolometer) infrared acquisition wherein based on mems manufacturing process
Device is high due to its speed of response, and processing technology is simple and compatible with integrated circuit fabrication process, has relatively low cross-talk and relatively low
1/f noise, higher frame speed, work, without chopper, the advantages of be easy to large-scale production, is non-refrigerated infrared detector
One of mainstream technology.
Micro-metering bolometer (micro-bolometer) is based on having the material of sensitive characteristic when temperature changes
A kind of non-refrigeration infrared detector that resistance value occurs corresponding change and manufactures.To the heat being supported on heat insulating construction during work
Quick resistance two ends apply fixing bias voltage or current source, and the temperature change that incident IR radiation causes makes critesistor hinder
Value reduces, so that electric current, voltage change, and by reading circuit (roic:readout integrated circuits)
Read the change of the signal of telecommunication.The infrared detective process of micro-metering bolometer, mainly by hanging micro-bridge structure Lai complete
Become, so the structure manufacture of micro-metering bolometer is the key factor determining its performance.Traditional structure is double-decker, bottom
Bridge lower limb, top layer heat-sensitive layer, and the temperature rise contribution to heat-sensitive layer is concentrated mainly on top level structure, remaining knot such as bridge lower limb structure of bottom
The temperature rise contribution of structure is all smaller, thus leading to detector sensitivity than relatively low.
Chinese invention patent Authorization Notice No. is a kind of " non-refrigerated infrared detector and its preparation of cn 103715307 b
Method ", disclose a kind of preparation method of non-refrigerated infrared detector and its structure.The monolayer micro-bridge structure that this patent uses,
Bridge lower limb and heat-sensitive layer are all in same layer.This structure, when making large scale pixel, can effectively lift absorbance.But it is as
The reducing of pixel dimension, this structure will can not meet the demand of high-absorbility detector pixel.Further, since the resonance of this structure
Chamber limited height, the infrared wavelength range being able to detect that is limited, is concentrated mainly on 8-14 μm.
In consideration of it, being necessary to develop a kind of new non-refrigerated infrared focal plane probe pixel, to solve prior art
Not enough.
Content of the invention
An object of the present invention, is to provide a kind of manufacture method of new non-refrigerated infrared focal plane probe pixel.
The manufacture method of the present invention is simple, it is possible to increase the compatibility with integrated circuit, such that it is able to accomplish scale production, reduces life
Produce cost.
The technical scheme is that a kind of new non-refrigerated infrared focal plane probe picture
The manufacture method of unit, comprises the steps:
Step 1 a: Semiconductor substrate comprising reading circuit is provided, deposits a metal level on a semiconductor substrate；And it is right
Metal level is patterned, and forms metallic reflection layer pattern and metal electrode block；Reading on metal electrode block and Semiconductor substrate
Go out circuit electrical connection；Insulating medium layer is deposited on completing patterned metal level；Deposition first sacrifice on insulating medium layer
Layer, and planarization process is carried out to the first sacrifice layer, the first sacrifice layer after completing planarization process deposits sio2Thin film
As the first supporting layer；Again in the first supporting layer cvd nitride silicon thin film as the first supporting layer protective layer；
Step 2: from described first supporting layer protective layer to described Semiconductor substrate side upwardly through photoetching and react from
The method etching first through hole of son etching, first through hole etch-stop is in the metal electrode block electrically connecting with reading circuit；
Step 3: on the first supporting layer protective layer and first through hole bottom deposit first metal electrode layer, and to first
Metal electrode layer is patterned, and forms metal connecting line and metal electrode；The first metal electrode after completing graphical treatment
The first silicon nitride medium layer is deposited on layer；Then from the first silicon nitride medium layer vertically downward, etch the first silicon nitride successively to be situated between
Matter layer, the first metal electrode layer, the first supporting layer protective layer and the first supporting layer, etch-stop is in described first sacrifice layer；Shape
Become bridge lower limb structure；
Step 4: depositing second sacrificial layer in bridge lower limb structure, and planarization process is carried out to the second sacrifice layer, complete
Sio is deposited on the second sacrifice layer after planarization process2Thin film is as the second supporting layer；Cvd nitride on the second supporting layer again
Silicon thin film is as the second supporting layer protective layer；On from described second supporting layer protective layer to described first metal electrode layer direction
Second through hole is etched by the method for photoetching and reactive ion etching, the second through hole etch-stop in the first metal electrode layer；
Step 5: on the second supporting layer protective layer and the second through hole bottom deposit second metal electrode layer, and to second
Metal electrode layer is patterned；
Step 6: the second silicon nitride medium layer is deposited on the second metal electrode layer after completing graphical treatment；In deposition
The method passing through photoetching and reactive ion etching on second metal electrode layer of complete second silicon nitride medium layer, etches away the second gold medal
Belong to part the second silicon nitride medium layer above electrode layer, expose the second metal electrode layer, form contact hole；
Step 7: deposit heat-sensitive layer on the second silicon nitride medium layer forming contact hole, and figure is carried out to heat-sensitive layer
Change；
Step 8: on the heat-sensitive layer after completing graphical treatment, cvd nitride silicon thin film is as heat-sensitive layer protective layer and right
Heat-sensitive layer protective layer is patterned；
Step 9: certainly complete the heat-sensitive layer protective layer after graphical treatment vertically downward, successively etching heat-sensitive layer protective layer,
Heat-sensitive layer, the second silicon nitride medium layer, the second metal electrode layer, the second supporting layer protective layer, etch-stop is in the second sacrifice layer；
Form the hot-cast socket structure comprising microbridge lower limb and heat-sensitive structure；
Step 10: deposit 3rd sacrifice layer in the hot-cast socket structure comprising microbridge lower limb and heat-sensitive structure, and sacrificial to the 3rd
Domestic animal layer carries out planarization process, and the 3rd sacrifice layer after completing planarization process deposits sio2Thin film is as the 3rd support
Layer；Again on the 3rd supporting layer deposit absorbent layer film as absorbed layer；Again on absorbed layer cvd nitride silicon thin film as suction
Receive layer protective layer, form absorbent layer structure；
Step 11: vertically downward, etching successively absorbs protective layer, absorbed layer and the 3rd supporting layer, erosion to self-absorption protective layer
Quarter terminates at 3rd sacrifice layer；Then discharge the first sacrifice layer, the second sacrifice layer and 3rd sacrifice layer, obtain final product described new non-system
Cold infrared focal plane detector pixel.
On the basis of technique scheme, the present invention can also do following improvement.
Further, in step 1, described metallic reflector thickness is 0.05-0.40 μm；Described insulating medium layer is silicon nitride
Thin film or sio2Thin film, the thickness of described insulating medium layer is 0.02-0.30 μm；Described first sacrifice layer is amorphous carbon, non-
One of crystal silicon, polyimides；Sio is deposited using pecvd method2Thin film is as the first supporting layer；Described first supporting layer
Thickness be 0.05-0.30 μm；Using pecvd method cvd nitride silicon thin film as the first supporting layer protective layer；Described first
The thickness of supporting layer protective layer is 0.05-0.30 μm.
Using above-mentioned further beneficial effect it is: be capable of stability and the flatness of each Rotating fields.Wherein, metal
The reflectance of the infrared light to specific wavelength (as 8-14 μm) for the reflecting layer is more than 98%.
Further, in step 3, described first metal electrode layer is deposited using pvd method, described first metal electrode layer is
One of ti thin film, nicr thin film or tin thin film；The thickness of described first metal electrode layer isUsing
Pevcd method deposits described first silicon nitride medium layer；The thickness of described first silicon nitride medium layer is
Further, in step 4, described second sacrifice layer is one of amorphous carbon, non-crystalline silicon, silicon oxide, polyimides；
The thickness of described second sacrifice layer is 0.5-3 μm；Sio is deposited using pecvd method2Thin film is as the second supporting layer；Described
The thickness of two supporting layers is 0.05-0.30 μm；Using pecvd method cvd nitride silicon thin film as the second supporting layer protective layer；
The thickness of described second supporting layer protective layer is 0.05-0.30 μm.
Further, in step 5, described second metal electrode layer is deposited using pvd method, described second metal electrode layer is
One of ti thin film, nicr thin film or tin thin film；The thickness of described second metal electrode layer is
Further, in step 6, described second silicon nitride medium layer is deposited using pevcd method；Described second silicon nitride is situated between
The thickness of matter layer isEtching contact hole adopts sf6、chf3And o2, or cf4And o2As etching gas, using end
Point monitoring device is etched reaction end monitoring.
Using above-mentioned further beneficial effect it is: etching reaction is monitored using epd, can effectively monitor and be etched into
Journey, it is to avoid electrode is all etched clean, prevent from cutting through electrode layer.
Further, in step 7, the method using ion beam depositing or physical vapour deposition (PVD) deposits described heat-sensitive layer；Described
Heat-sensitive layer is vox thin film or amorphous silicon membrane；The thickness of described heat-sensitive layer isBefore deposition heat-sensitive layer, first
One layer of v/v of deposition2o5/ v thin film as transition zone, described v/v2o5The thickness of/v thin film is
Further, in step 8, using pecvd method cvd nitride silicon thin film as temperature-sensitive protective layer；Described heat-sensitive layer is protected
The thickness of sheath is
Further, in step 10, described 3rd sacrifice layer is amorphous carbon, non-crystalline silicon, silicon oxide, in polyimides one
Kind；The thickness of described 3rd sacrifice layer is 0.5-3 μm；Sio is deposited using pecvd method2Thin film is as the 3rd supporting layer；Described
The thickness of the 3rd supporting layer is 0.05-0.30 μm；The described material absorbing layer film is Graphene, CNT, nano-silica
Change one of titanium nanotube, nano zine oxide nanotube, nano aluminium oxide nanotube；The thickness of described absorbed layer protective layer is
0.05-0.30μm.
Using above-mentioned further beneficial effect it is: the absorption for distinctive infra-red bands (as 8-14 μm) can be lifted
Rate.
Further, in step 11, using resist remover, ion etching machine or plasma ashing machine to described first sacrifice layer,
Second sacrifice layer and 3rd sacrifice layer are discharged.
Using above-mentioned further beneficial effect it is: discharged non-using resist remover, ion etching machine or plasma ashing machine
Brilliant carbon, can discharge more complete, and generate carbon dioxide and water, do not pollute the environment.
Further, step 1, step 4, step 8, in step 10, the stress of described silicon nitride film is -50-100mpa.
Using above-mentioned further beneficial effect it is: the pressure of silicon nitride film is -50-100mpa, belongs to low stress.Cross
Big tensile stress can make thin film rupture, and excessive compressive stress then can make thin film warpage occur under above-mentioned low stress.And
The pressure limit that the silicon nitride film of the present invention is adopted, can be effectively prevented film breaks or warpage.
The second object of the present invention, is to provide a kind of new non-refrigerated infrared focal plane probe pixel.The present invention's is non-
Refrigerated infrared focal plane probe pixel, can significantly improve the absorbance of infra-red radiation, the responsiveness of lifting detector, for manufacturing
The detector of bigger array and less pixel lays the first stone.
The technical scheme is that a kind of new non-refrigerated infrared focal plane probe picture
Unit, has the detector pixel of three-decker, described detector pixel including a Semiconductor substrate comprising reading circuit and one
Formed with the reading circuit of described Semiconductor substrate and electrically connect,
Described detector pixel from Semiconductor substrate up, includes three-decker successively, and wherein, ground floor is tied for bridge lower limb
Structure, the second layer is the hot-cast socket structure comprising microbridge lower limb and heat-sensitive structure, and third layer is absorbent layer structure；
The bridge lower limb structure of ground floor includes metallic reflector, insulating medium layer, the first supporting layer, the first supporting layer protection
Layer, the first metal electrode layer and the first silicon nitride medium layer；
The hot-cast socket structure of the second layer include the second supporting layer, the second supporting layer protective layer, the second metal electrode layer, second
Silicon nitride medium layer, heat-sensitive layer and heat-sensitive layer protective layer；
The absorbent layer structure of third layer includes the 3rd supporting layer, absorbed layer and absorbed layer protective layer；
Metallic reflector and insulating medium layer are disposed with the reading circuit of described Semiconductor substrate；
Described first supporting layer is arranged at the top of described insulating medium layer；
Described first supporting layer protective layer, the first metal electrode layer and the first nitrogen are disposed with described first supporting layer
SiClx dielectric layer；
Described second supporting layer is arranged at the top of described first silicon nitride medium layer；
Described second supporting layer protective layer, the second metal electrode layer, the second nitrogen are disposed with described second supporting layer
SiClx dielectric layer, heat-sensitive layer and heat-sensitive layer protective layer；
Described 3rd supporting layer is arranged at the top of described heat-sensitive layer protective layer；
It is disposed with described absorbed layer and absorbed layer protective layer on described 3rd supporting layer.
In the present invention, the bridge lower limb structure of ground floor is bottom, using the bridge supporting construction of the elongated bridge lower limb that gathers, is for reality
Existing heat insulation between sensor and substrate.
The thermo-electric conversion structure of the second layer also comprises microbridge lower limb and heat-sensitive structure, so that integrally-built bridge leg length becomes
Long, the thermal insulation of detector can be made more preferably, such that it is able to reduce the impact of ambient temperature, reduce thermal conductivity, lift detector
Performance.
The absorbed layer of third layer is top layer, using sub-wavelength absorbing structure, can effectively improve the suction of distinctive infra-red bands
Yield, so that the thermal response of the second layer thermo-electric conversion structure being connected with third layer structure is bigger.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described insulating medium layer is silicon nitride film；Described first supporting layer is sio2 thin film；Described first
Support layer protective layer is silicon nitride film；Described second supporting layer is sio2 thin film；Described second supporting layer protective layer is silicon nitride
Thin film；Described heat-sensitive layer is vox thin film or amorphous silicon membrane；Described heat-sensitive layer protective layer is silicon nitride film；Described 3rd
Support layer is sio2Thin film.
The invention has the beneficial effects as follows:
1. the non-refrigerated infrared focal plane probe pixel of the present invention, using three-decker, the hot-cast socket structure of the second layer
It is respectively between the bridge lower limb structure of ground floor and the absorbent layer structure of third layer, thus can when making the detector of little pixel
With effective lifting fill factor, curve factor.In addition, the detector pixel of this structure investigative range can be expanded to from 8-14 μm wider
Sub-wavelength wave band.
2. the non-refrigerated infrared focal plane probe pixel of the present invention, it is possible to achieve the heat insulation of temperature responsive unit and substrate,
Thus reducing the impact that variation of ambient temperature exports to detector, increased detector sensitivity.
3. the non-refrigerated infrared focal plane probe pixel of the present invention, can significantly improve the absorbance of infra-red radiation, widen
INFRARED ABSORPTION spectral coverage, the responsiveness of lifting detector, the detector for manufacturing bigger array and less pixel lays the first stone.
4. the method for the present invention can be easy to large-scale production with ic process compatibility.
Brief description
Fig. 1 is that metallic reflector, the first sacrifice layer, the first supporting layer and the formation of the first supporting layer protective layer of the present invention are shown
It is intended to.
Fig. 2 is that the first through hole of the present invention forms schematic diagram.
Fig. 3 is first metal electrode layer of the present invention and the bridge lower limb structure of ground floor forms schematic diagram.
Fig. 4 is that the second sacrifice layer, the second supporting layer and the second supporting layer protective layer of the present invention form schematic diagram.
Fig. 5 is that second metal electrode layer of the present invention forms schematic diagram.
Fig. 6 is that the contact hole of the present invention forms schematic diagram.
Fig. 7 is that the heat-sensitive layer of the present invention forms schematic diagram.
Fig. 8 is that the heat-sensitive layer protective layer of the present invention forms schematic diagram.
Fig. 9 is that the hot-cast socket structure of second Rotating fields of the present invention forms schematic diagram.
Figure 10 is 3rd sacrifice layer and the 3rd supporting layer, absorbed layer, the absorbed layer protective layer formation schematic diagram of the present invention.
Figure 11 is that three layers of micro-bridge structure of the present invention form schematic diagram.
Figure 12 is the absorbance contrast curve chart with the pixel of prior art for the pixel of the present invention.
In accompanying drawing, the list of parts representated by each label is as follows:
1st, Semiconductor substrate, 2, metallic reflector, 3, metal electrode block, 4, insulating medium layer, the 51, first sacrifice layer, 52,
Second sacrifice layer, 53,3rd sacrifice layer, the 6, first supporting layer, the 7, first supporting layer protective layer, 8, first through hole, the 9, first gold medal
Belong to electrode layer, 91, metal connecting line, 92, metal electrode, the 10, first silicon nitride medium layer, the 11, second supporting layer, 12, second
Support layer protective layer, the 13, second through hole, the 14, second metal electrode layer, the 15, second silicon nitride medium layer, 16, contact hole, 17, heat
Photosensitive layer, 18, heat-sensitive layer protective layer, the 19, the 3rd supporting layer, 20, absorbed layer, 21, absorbed layer protective layer.
Specific embodiment
Below in conjunction with accompanying drawing, the principle of the present invention and feature are described, example is served only for explaining the present invention, and
Non- for limiting the scope of the present invention.
A kind of manufacture method of new non-refrigerated infrared focal plane probe pixel, comprises the steps:
Step 1: as shown in figure 1, providing a Semiconductor substrate 1 comprising reading circuit (not shown), in quasiconductor
One metal level is deposited on substrate 1；And metal level is patterned, form metallic reflector 2 figure and metal electrode block 3, gold
Belong to reflecting layer 2 thickness and be 0.05-0.40 μm；Metal electrode block 3 is electrically connected with the reading circuit in Semiconductor substrate 1；Complete
On patterned metal level deposit insulating medium layer 4, insulating medium layer 4 for stress be -50-100mpa silicon nitride film or
sio2Thin film, the thickness of insulating medium layer 4 is 0.02-0.30 μm；First sacrifice layer 51 deposited on insulating medium layer 4, first
Sacrifice layer 51 is one of amorphous carbon, non-crystalline silicon, polyimides, and carries out planarization process to the first sacrifice layer 51, complete
Become, on the first sacrifice layer 51 after planarization process, sio is deposited using pecvd method2Thin film is as the first supporting layer 6；Again
On one supporting layer 6, deposition stress is the silicon nitride film of -50-100mpa as the first supporting layer protective layer 7, the first supporting layer 6
Thickness be 0.05-0.30 μm.
Step 2: as shown in Fig. 2 from described first supporting layer protective layer 7 to described Semiconductor substrate 1 side upwardly through
The method etching first through hole 8 of photoetching and reactive ion etching, first through hole 8 etch-stop is in the gold electrically connecting with reading circuit
Belong to electrode block 3.
Step 3: as shown in figure 3, adopting pvd method to deposit with the bottom of first through hole 8 on the first supporting layer protective layer 7
First metal electrode layer 9, the first metal electrode layer 9 is one of ti thin film, nicr thin film or tin thin film, the first metal electricity
The thickness of pole layer 9 isAnd the first metal electrode layer 9 is patterned, form metal connecting line 91 and metal electricity
Pole 92；Pevcd method is adopted to deposit the first silicon nitride medium layer on the first metal electrode layer 9 after completing graphical treatment
10, the thickness of the first silicon nitride medium layer 10 isThen from the first silicon nitride medium layer 10 vertically downward, according to
Secondary etching the first silicon nitride medium layer 10, the first metal electrode layer 9, the first supporting layer protective layer 7 and the first supporting layer 6, etching
Terminate at described first sacrifice layer 51；Form bridge lower limb structure.
Step 4: as shown in figure 4, depositing second sacrificial layer 52 in bridge lower limb structure, the second sacrifice layer 52 is amorphous carbon, non-
One of crystal silicon, silicon oxide, polyimides, the thickness of the second sacrifice layer 52 is 0.5-3 μm, and the second sacrifice layer 52 is carried out
Planarization process, the second sacrifice layer 52 after completing planarization process adopts pecvd method deposit sio2Thin film is as
Two supporting layers 11, the thickness of the second supporting layer 11 is 0.05-0.30 μm；Pecvd method is adopted to sink again on the second supporting layer 11
Long-pending stress is the silicon nitride film of -50-100mpa as the second supporting layer protective layer 12, the thickness of the second supporting layer protective layer 12
For 0.05-0.30 μm；From described second supporting layer protective layer 12 to described first metal electrode layer 9 side upwardly through photoetching and
The method of reactive ion etching etches the second through hole 13, the second through hole 13 etch-stop in the first metal electrode layer 9.
Step 5: as shown in figure 5, the bottom with the second through hole 13 on the second supporting layer protective layer 12, using pvd method
Deposit the second metal electrode layer 14, the second metal electrode layer 14 is one of ti thin film, nicr thin film or tin thin film, second
The thickness of metal electrode layer 14 isAnd the second metal electrode layer 14 is patterned.
Step 6: as shown in fig. 6, being sunk using pevcd method on the second metal electrode layer 14 after completing graphical treatment
Amass the second silicon nitride medium layer 15, the thickness of the second silicon nitride medium layer 15 isDepositing the second silicon nitride
The method passing through photoetching and reactive ion etching on second metal electrode layer 14 of dielectric layer 15, etches away the second metal electrode layer
Part the second silicon nitride medium layer 15 of 14 tops, exposes the second metal electrode layer 14, forms contact hole 16；Etching contact hole 16
Using sf6、chf3And o2, or cf4And o2As etching gas；Metal electrode layer very thin thickness, in etching process, using terminal prison
Measurement equipment is etched reaction end monitoring, in order to avoid will be clean for metal electrode layer etching.
Step 7: as shown in fig. 7, on the second silicon nitride medium layer 15 forming contact hole 16, using ion beam depositing or
The method deposition heat-sensitive layer 17 of physical vapour deposition (PVD), heat-sensitive layer 17 is vox thin film or amorphous silicon membrane, and the thickness of heat-sensitive layer 17 isBefore deposition heat-sensitive layer, first deposit one layer of v/v2o5/ v thin film is as transition zone, v/v2o5The thickness of/v thin film
Spend and beAnd heat-sensitive layer 17 is patterned.
Step 8: as shown in figure 8, on heat-sensitive layer 17 after completing graphical treatment, using pecvd method deposition stress
Silicon nitride film for -50-100mpa as heat-sensitive layer protective layer 18, the thickness of heat-sensitive layer protective layer 18 is
And heat-sensitive layer protective layer 18 is patterned.
Step 9: as shown in figure 9, certainly completing the heat-sensitive layer protective layer 18 after graphical treatment vertically downward, etch heat successively
Photosensitive layer protective layer 18, heat-sensitive layer 17, the second silicon nitride medium layer 15, the second metal electrode layer 14, the second supporting layer protective layer 12,
Etch-stop is in the second sacrifice layer 52；Form the hot-cast socket structure comprising microbridge lower limb and heat-sensitive structure.
Step 10: as shown in Figure 10,3rd sacrifice layer is deposited on the hot-cast socket structure comprising microbridge lower limb and heat-sensitive structure
53,3rd sacrifice layer 53 is one of amorphous carbon, non-crystalline silicon, silicon oxide, polyimides, and the thickness of 3rd sacrifice layer 53 is
0.5-3 μm, and planarization process is carried out to 3rd sacrifice layer 53；In 3rd sacrifice layer 53 after completing planarization process, adopt
Deposit sio with pecvd method2Thin film is 0.05-0.30 μm as the 3rd supporting layer 19, the thickness of the 3rd supporting layer 19；Exist again
On 3rd supporting layer 19, deposit absorbent layer film is as absorbed layer 20, the material absorbing layer film is Graphene, CNT, two
One of titanium oxide nanotubes, zinc oxide nano mitron, alumina nano tube；On absorbed layer 20, deposition stress is -50- again
The silicon nitride film of 100mpa is 0.05-0.30 μm, is formed and inhale as absorbed layer protective layer 21, the thickness of absorbed layer protective layer 21
Receive Rotating fields.
Step 11: as shown in figure 11, vertically downward, etching successively absorbs protective layer 21, absorbed layer to self-absorption protective layer 21
20 and the 3rd supporting layer 19, etch-stop is in 3rd sacrifice layer 53；Then resist remover, ion etching machine or plasma ashing are adopted
Machine discharges the first sacrifice layer 51, the second sacrifice layer 52 and 3rd sacrifice layer 53, obtains final product described new non-refrigerating infrared focal plane and visits
Survey device pixel.
A kind of new non-refrigerated infrared focal plane probe pixel, as shown in figure 11, comprises the half of reading circuit including one
Conductor substrate and one has the detector pixel of three-decker, the reading circuit of described detector pixel and described Semiconductor substrate
Form electrical connection,
Described detector pixel from Semiconductor substrate 1 up, includes three-decker successively, and wherein, ground floor is tied for bridge lower limb
Structure, the second layer is hot-cast socket structure, and third layer is absorbent layer structure；
The bridge lower limb structure of ground floor includes metallic reflector 2, insulating medium layer 4, the first supporting layer 6, the first supporting layer guarantor
Sheath 7, the first metal electrode layer 9 and the first silicon nitride medium layer 10；
The hot-cast socket structure of the second layer includes the second supporting layer 11, the second supporting layer protective layer 12, the second metal electrode layer
14th, the second silicon nitride medium layer 15, heat-sensitive layer 17 and heat-sensitive layer protective layer 18；
The absorbent layer structure of third layer includes the 3rd supporting layer 19, absorbed layer 20 and absorbed layer protective layer 21；
Metallic reflector 2 and insulating medium layer 4 are disposed with the reading circuit of described Semiconductor substrate 1；
Described first supporting layer 6 is arranged at the top of described insulating medium layer 4；
Described first supporting layer protective layer 7, the first metal electrode layer 9 and are disposed with described first supporting layer 6
One silicon nitride medium layer 10；
Described second supporting layer 11 is arranged at the top of described first silicon nitride medium layer 10；
Be disposed with described second supporting layer 11 described second supporting layer protective layer 12, the second metal electrode layer 14,
Second silicon nitride medium layer 15, heat-sensitive layer 17 and heat-sensitive layer protective layer 18；
Described 3rd supporting layer 19 is arranged at the top of described heat-sensitive layer protective layer 18；
It is disposed with described absorbed layer 20 and absorbed layer protective layer 21 on described 3rd supporting layer 19.
Wherein, described insulating medium layer 4 is silicon nitride film；Described first supporting layer 6 is sio2Thin film；Described first
Support layer protective layer 7 is silicon nitride film；Described second supporting layer 11 is sio2Thin film；Described second supporting layer protective layer 12 is nitrogen
SiClx thin film；Described heat-sensitive layer 17 is vox thin film or amorphous silicon membrane；Described heat-sensitive layer protective layer 18 is silicon nitride film；Institute
Stating the 3rd supporting layer 19 is sio2Thin film.
The absorbance of the pixel of the present invention and the pixel of prior art is contrasted, as shown in figure 12.The pixel of the present invention
In 3-14 μm of absorbance all more than 80%, the absorbance of 8-14 mu m waveband has more reached more than 90% to structure.And existing skill
The structure of art is very low in 3-5 μm of absorbance, only 15-40%, and 8-14 μm of absorbance also only has 80% about.Thus may be used
See that the non-refrigerated infrared focal plane probe pixel of the present invention can significantly improve the absorbance of infra-red radiation, widen INFRARED ABSORPTION
Spectral coverage, the responsiveness of lifting detector, the detector for manufacturing bigger array and less pixel lays the first stone.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvement made etc., should be included within the scope of the present invention.
Claims (10)
1. a kind of manufacture method of new non-refrigerated infrared focal plane probe pixel is it is characterised in that comprise the steps:
Step 1: provide a Semiconductor substrate (1) comprising reading circuit, in Semiconductor substrate (1) upper deposition one metal level；And
Metal level is patterned, forms metallic reflector (2) figure and metal electrode block (3)；Metal electrode block (3) and quasiconductor
Reading circuit electrical connection on substrate (1)；Deposition insulating medium layer (4) on completing patterned metal level；In dielectric
Layer (4) is upper to deposit ground floor sacrifice layer (51), and carries out planarization process to the first sacrifice layer (51), completes planarization process
The first sacrifice layer (51) afterwards is upper to deposit sio2Thin film is as the first supporting layer (6)；Again in the upper cvd nitride of the first supporting layer (6)
Silicon thin film is as the first supporting layer protective layer (7)；
Step 2: in the side from described first supporting layer protective layer (7) to described Semiconductor substrate (1) upwardly through photoetching and reaction
Method etching first through hole (8) of ion(ic) etching, first through hole (8) etch-stop is in the metal electrode electrically connecting with reading circuit
Block (3)；
Step 3: the bottom deposit first metal electrode layer (9) of and first through hole (8) upper in the first supporting layer protective layer (7), and
First metal electrode layer (9) is patterned, forms metal connecting line (91) and metal electrode (92)；Complete graphical treatment
The first metal electrode layer (9) afterwards is upper to deposit the first silicon nitride medium layer (10)；Then hang down from the first silicon nitride medium layer (10)
Directly downward, etch the first silicon nitride medium layer (10), the first metal electrode layer (9), the first supporting layer protective layer (7) and the successively
One supporting layer (6), etch-stop is in described first sacrifice layer (51)；Form bridge lower limb structure；
Step 4: depositing second sacrificial layer (52) in bridge lower limb structure, and planarization process is carried out to the second sacrifice layer (52),
Complete the upper deposition sio of the second sacrifice layer (52) after planarization process2Thin film is as the second supporting layer (11)；Again in the second support
The upper cvd nitride silicon thin film of layer (11) is as the second supporting layer protective layer (12)；From described second supporting layer protective layer (12) extremely
Square method etching the second through hole (13) upwardly through photoetching and reactive ion etching of described first metal electrode layer (9), second
Through hole (13) etch-stop in the first metal electrode layer (9)；
Step 5: in the upper bottom deposit second metal electrode layer (14) with the second through hole (13) of the second supporting layer protective layer (12),
And the second metal electrode layer (14) is patterned；
Step 6: the second metal electrode layer (14) after completing graphical treatment is upper to deposit the second silicon nitride medium layer (15)；?
Deposit the upper method passing through photoetching and reactive ion etching of the second metal electrode layer (14) of the second silicon nitride medium layer (15),
Etch away the part the second silicon nitride medium layer (15) above the second metal electrode layer (14), expose the second metal electrode layer
(14), form contact hole (16)；
Step 7: above deposit heat-sensitive layer (17) in the second silicon nitride medium layer (15) forming contact hole (16), and to heat-sensitive layer
(17) it is patterned；
Step 8: the heat-sensitive layer (17) after completing graphical treatment goes up cvd nitride silicon thin film as heat-sensitive layer protective layer (18),
And heat-sensitive layer protective layer (18) is patterned；
Step 9: certainly complete the heat-sensitive layer protective layer (18) after graphical treatment vertically downward, etch heat-sensitive layer protective layer successively
(18), heat-sensitive layer (17), the second silicon nitride medium layer (15), the second metal electrode layer (14), the second supporting layer protective layer (12),
Etch-stop is in the second sacrifice layer (52)；Form the hot-cast socket structure comprising microbridge lower limb and heat-sensitive structure；
Step 10: deposition 3rd sacrifice layer (53) in the hot-cast socket structure comprising microbridge lower limb and heat-sensitive structure, and sacrificial to the 3rd
Domestic animal layer (53) carries out planarization process, and the 3rd sacrifice layer (53) after completing planarization process is upper to deposit sio2Thin film is as
Three supporting layers (19)；Again in the upper deposit absorbent layer film of the 3rd supporting layer (19) as absorbed layer (20)；Again in absorbed layer (20)
Upper cvd nitride silicon thin film, as absorbed layer protective layer (21), forms absorbent layer structure；
Step 11: vertically downward, etching successively absorbs protective layer (21), absorbed layer (20) and the 3rd to self-absorption protective layer (21)
Support layer (19), etch-stop is in 3rd sacrifice layer (53)；Then the first sacrifice layer (51), the second sacrifice layer (52) and the 3rd are discharged
Sacrifice layer (53), obtains final product described new non-refrigerated infrared focal plane probe pixel.
2. the manufacture method of a kind of new non-refrigerated infrared focal plane probe pixel according to claim 1, its feature
It is, in step 1, described metallic reflector (2) thickness is 0.05-0.40 μm；Described insulating medium layer (4) is silicon nitride film
Or sio2Thin film, the thickness of described insulating medium layer (4) is 0.02-0.30 μm；Described first sacrifice layer (51) be amorphous carbon,
One of non-crystalline silicon, polyimides；Sio is deposited using pecvd method2Thin film is as the first supporting layer (6)；Described first
The thickness of support layer (6) is 0.05-0.30 μm；Using pecvd method cvd nitride silicon thin film as the first supporting layer protective layer
(7)；The thickness of described first supporting layer protective layer (7) is 0.05-0.30 μm.
3. the manufacture method of a kind of new non-refrigerated infrared focal plane probe pixel according to claim 1, its feature
It is, in step 3, deposit described first metal electrode layer (9) using pvd method, described first metal electrode layer (9) is that ti is thin
One of film, nicr thin film or tin thin film；The thickness of described first metal electrode layer (9) isUsing pevcd
Method deposits described first silicon nitride medium layer (10)；The thickness of described first silicon nitride medium layer (10) is
4. the manufacture method of a kind of new non-refrigerated infrared focal plane probe pixel according to claim 1, its feature
It is, in step 4, described second sacrifice layer (52) is one of amorphous carbon, non-crystalline silicon, silicon oxide, polyimides；Described
The thickness of two sacrifice layers (52) is 0.5-3 μm；Sio is deposited using pecvd method2Thin film is as the second supporting layer (11)；Described
The thickness of the second supporting layer (11) is 0.05-0.30 μm；Protected as the second supporting layer using pecvd method cvd nitride silicon thin film
Sheath (12)；The thickness of described second supporting layer protective layer (12) is 0.05-0.30 μm.
5. the manufacture method of a kind of new non-refrigerated infrared focal plane probe pixel according to claim 1, its feature
It is, in step 5, deposit described second metal electrode layer (14) using pvd method, described second metal electrode layer (14) is ti
One of thin film, nicr thin film or tin thin film；The thickness of described second metal electrode layer (14) isStep 6
In, described second silicon nitride medium layer (15) is deposited using pevcd method；The thickness of described second silicon nitride medium layer (15) isEtching contact hole adopts sf6、chf3And o2, or cf4And o2As etching gas, entered using endpoint monitoring equipment
Row etching reaction endpoint monitoring.
6. the manufacture method of a kind of new non-refrigerated infrared focal plane probe pixel according to claim 1, its feature
It is, in step 7, the method using ion beam depositing or physical vapour deposition (PVD) deposits described heat-sensitive layer (17)；Described heat-sensitive layer
(17) it is vox thin film or amorphous silicon membrane；The thickness of described heat-sensitive layer (17) isIn deposition heat-sensitive layer (17)
Before, first deposit one layer of v/v2o5/ v thin film as transition zone, described v/v2o5The thickness of/v thin film isStep 8
In, using pecvd method cvd nitride silicon thin film as temperature-sensitive protective layer (18)；The thickness of described heat-sensitive layer protective layer (18) is
7. the manufacture method of a kind of new non-refrigerated infrared focal plane probe pixel according to claim 1, its feature
It is, in step 10, described 3rd sacrifice layer (53) is one of amorphous carbon, non-crystalline silicon, silicon oxide, polyimides；Described
The thickness of 3rd sacrifice layer (53) is 0.5-3 μm；Sio is deposited using pecvd method2Thin film is as the 3rd supporting layer (19)；Institute
The thickness stating the 3rd supporting layer (19) is 0.05-0.30 μm；Described absorb layer film material be Graphene, CNT, two
One of titanium oxide nanotubes, zinc oxide nano mitron, alumina nano tube；The thickness of described absorbed layer protective layer (23) is
0.05-0.30μm.
8. the manufacture method of a kind of new non-refrigerated infrared focal plane probe pixel according to claim 1, its feature
It is, in step 11, using resist remover, ion etching machine or plasma ashing machine to described first sacrifice layer (51), second sacrificial
Domestic animal layer (52) and 3rd sacrifice layer (53) are discharged.
9. a kind of new non-refrigerated infrared focal plane probe pixel, including a Semiconductor substrate comprising reading circuit and a tool
There is the detector pixel of three-decker, described detector pixel is formed with the reading circuit of described Semiconductor substrate and electrically connects, its
It is characterised by,
Described detector pixel from Semiconductor substrate (1) up, includes three-decker successively, and wherein, ground floor is bridge lower limb structure,
The second layer is hot-cast socket structure, and third layer is absorbent layer structure；
The bridge lower limb structure of ground floor includes metallic reflector (2), insulating medium layer (4), the first supporting layer (6), the first supporting layer
Protective layer (7), the first metal electrode layer (9) and the first silicon nitride medium layer (10)；
The hot-cast socket structure of the second layer includes the second supporting layer (11), the second supporting layer protective layer (12), the second metal electrode layer
(14), the second silicon nitride medium layer (15), heat-sensitive layer (17) and heat-sensitive layer protective layer (18)；
The absorbent layer structure of third layer includes the 3rd supporting layer (19), absorbed layer (20) and absorbed layer protective layer (21)；
Metallic reflector (2) and insulating medium layer (4) are disposed with the reading circuit of described Semiconductor substrate (1)；
Described first supporting layer (6) is arranged at the top of described insulating medium layer (4)；
Be disposed with described first supporting layer (6) described first supporting layer protective layer (7), the first metal electrode layer (9) and
First silicon nitride medium layer (10)；
Described second supporting layer (11) is arranged at the top of described first silicon nitride medium layer (10)；
Described second supporting layer protective layer (12), the second metal electrode layer are disposed with described second supporting layer (11)
(14), the second silicon nitride medium layer (15), heat-sensitive layer (17) and heat-sensitive layer protective layer (18)；
Described 3rd supporting layer (19) is arranged at the top of described heat-sensitive layer protective layer (18)；
It is disposed with described absorbed layer (20) and absorbed layer protective layer (21) on described 3rd supporting layer (19).
10. a kind of new non-refrigerated infrared focal plane probe pixel according to claim 9 is it is characterised in that described
Insulating medium layer (4) is silicon nitride film；Described first supporting layer (6) is sio2Thin film；Described first supporting layer protective layer (7)
For silicon nitride film；Described second supporting layer (11) is sio2Thin film；Described second supporting layer protective layer (12) is that silicon nitride is thin
Film；Described heat-sensitive layer (17) is vox thin film or amorphous silicon membrane；Described heat-sensitive layer protective layer (18) is silicon nitride film；Described
3rd supporting layer (19) is sio2Thin film.
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| CN113659027A (en) * | 2021-02-01 | 2021-11-16 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN113720471A (en) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | Infrared detector pixel based on CMOS (complementary metal oxide semiconductor) process and infrared detector |
| CN113720478A (en) * | 2021-03-26 | 2021-11-30 | 北京北方高业科技有限公司 | Infrared detector pixel based on CMOS (complementary metal oxide semiconductor) process and infrared detector |
| CN113720471B (en) * | 2021-03-26 | 2023-01-06 | 北京北方高业科技有限公司 | Infrared detector pixel based on CMOS (complementary Metal oxide semiconductor) process and infrared detector |
| WO2023141768A1 (en) * | 2022-01-25 | 2023-08-03 | 烟台睿创微纳技术股份有限公司 | Microbolometer and preparation method therefor |
| CN116793504A (en) * | 2023-08-23 | 2023-09-22 | 北京中科海芯科技有限公司 | Novel thermal radiation infrared detector and manufacturing method thereof |
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Application publication date: 20170118 |