CN109946261B - Terahertz wave detection device with adjustable absorption wavelength and preparation method thereof - Google Patents
Terahertz wave detection device with adjustable absorption wavelength and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a terahertz wave detection device with adjustable absorption wavelength and a preparation method thereof, wherein the preparation method comprises the following steps: providing a substrate, and manufacturing and forming a supporting layer on the substrate; manufacturing and forming a heat-sensitive layer on the supporting layer; forming a conductive layer on the support layer and the thermosensitive layer; manufacturing and forming an absorption layer on the thermosensitive layer; manufacturing a light through hole on the surface of the substrate, which faces away from the absorption layer; providing a base and a movable reflector, and mounting the movable reflector on the base; the base is fixedly attached to the substrate such that the absorption layer is aligned parallel to the reflective surface of the movable mirror. The preparation method disclosed by the invention has the advantages that the process is simple, the detector and the movable reflector for tuning the wavelength are separated, the detection range of the detection device can cover the whole terahertz waveband, and meanwhile, the novel film process is beneficial to improving the detection rate and reducing the thermal response time constant.
Description
Technical Field
The invention relates to the field of terahertz wave detection, in particular to a terahertz wave detection device with adjustable absorption wavelength and a preparation method thereof.
Background
The uncooled microbolometer originates from the end of the 80's of the last century, and the detector is designed for the far infrared band of 8-14 microns at the beginning, and can theoretically detect the heat radiation light covering the range from near infrared to millimeter wave according to the heat radiation detection mechanism. Through the development of the last 30 years, the uncooled microbolometer based on the vanadium oxide thermal resistance sensitive film makes great progress in the aspect of detection rate, which can reach 109cm﹒Hz1/2The temperature/w is higher than that of a deuterated L-alanine triglycidyl sulfate (DLATGS) pyroelectric detector commonly used in the terahertz wave detection field by one order of magnitude, but is lower than that of a refrigeration type detector (a liquid helium refrigeration superconducting detector) by at least one order of magnitude, and the current uncooled microbolometer is limited in that the structure and the material do not reach the background noise detection limit at room temperature, and has a certain improvement space.
At present, most terahertz wave detection fields use pyroelectric detectors, the detection wavelength range of the pyroelectric detectors is large, the defect that the detector rate is slightly low can be overcome by using a high-power light source, but for weak and slowly-changed terahertz wave signals, uncooled microbolometers have more advantages, unfortunately, the terahertz wave absorption range of a single uncooled microbolometer is too narrow, the wavelength absorption range is determined by the distance between a suspended thermosensitive film bridge floor and a bottom reflector, and if interested terahertz wave bands are detected, the distance needs to be changed, and the detectors need to be specially customized.
In order to realize the detection of the wide-spectrum terahertz wave, the invention patent of the patent number US7968846B2 provides an uncooled micrometering bolometer with adjustable absorption wavelength, the uncooled micrometering bolometer with adjustable absorption wavelength provided by the invention patent utilizes the electrostatic attraction between a heat-sensitive film conductive bridge leg and a terahertz wave resonance enhancing reflector, the distance between a heat-sensitive film absorption bridge floor and the reflector is adjusted by voltage, but the electrostatic force provided by the uncooled micrometering bolometer is limited due to the small bridge leg area, under the condition of external 100V voltage, the distance change is not more than 2 mu m, the absorption center wavelength range is not more than 8 mu m, and the entire terahertz wave band (0.1-10 THz) can not be covered far. In addition, the original design and process are still adopted, particularly when a resonant cavity is manufactured, a polyimide sacrificial layer structure is continuously adopted, and because the layer cannot bear the high temperature of more than 300 ℃, the upper layer film, including the silicon nitride film and the vanadium oxide film, cannot adopt a high-temperature coating process, so that the high-temperature coating process is not helpful for thinning a silicon nitride supporting layer (reducing the thermal response time) and reducing the defects of a vanadium oxide thermal resistance sensitive layer (reducing the 1/f low-frequency noise). Furthermore, the distance between the deck and the mirror is absorbed by the voltage-adjusting heat-sensitive film, which causes the legs to deform, causing the overall deck impedance to fluctuate, producing current noise.
Disclosure of Invention
In view of the defects in the prior art, the invention provides the preparation method of the terahertz wave detection device with adjustable absorption wavelength, which is simple in preparation process, and the prepared detection device can realize the large-range tuning of the absorption wavelength of the terahertz wave.
In order to achieve the purpose, the invention adopts the following technical scheme:
a preparation method of a terahertz wave detection device with adjustable absorption wavelength comprises the following steps:
providing a substrate, and manufacturing and forming a supporting layer on the substrate;
manufacturing and forming a heat-sensitive layer on the supporting layer;
forming a conductive layer on the support layer and the thermosensitive layer;
manufacturing and forming an absorption layer on the thermosensitive layer;
manufacturing a light through hole on the surface of the substrate, which faces away from the absorption layer;
the base of the movable mirror is fixedly attached to the substrate so that the absorption layer is aligned with the reflection surface of the movable mirror.
Preferably, after the thermosensitive layer is formed on the supporting layer, the preparation method further includes etching two side portions of the thermosensitive layer.
Preferably, after the conductive layer is formed on the support layer and the heat-sensitive layer, the preparation method further includes etching a portion of the conductive layer on the heat-sensitive layer so that the heat-sensitive layer is exposed.
Preferably, after the conductive layer is formed on the support layer and the heat-sensitive layer, the preparation method further includes forming an insulating layer on the conductive layer and the heat-sensitive layer.
Preferably, after the insulating layer is formed on the conductive layer and the heat-sensitive layer, the preparation method further includes etching partial areas of the insulating layer, the conductive layer and the support layer on both sides of the heat-sensitive layer to form a plurality of continuous elongated holes in the insulating layer, the conductive layer and the support layer.
Preferably, a specific method of fixedly connecting the base and the substrate so that the absorption layer is aligned with the reflection surface of the movable mirror is: and manufacturing and forming a plurality of sticking columns, and respectively sticking two ends of the sticking columns to the base and the substrate.
Preferably, the support layer is formed on the substrate by a low-pressure vapor deposition process, the support layer is a silicon nitride layer, and the thickness of the support layer is 20-30 nm.
Preferably, the thermosensitive layer is formed on the supporting layer by adopting a magnetron sputtering process, the thermosensitive layer is a vanadium oxide layer, and the thickness of the thermosensitive layer is 5-10 nm.
Preferably, the absorbing layer is formed on the part, facing the thermosensitive layer, of the insulating layer by adopting a magnetron sputtering process, wherein the absorbing layer is a nichrome layer, and the thickness of the absorbing layer is 5 nm.
The invention also discloses a terahertz wave detection device with adjustable absorption wavelength, which comprises a base, a movable reflector and a detector;
the detector comprises a substrate, a supporting layer arranged on the substrate, a heat-sensitive layer arranged on the supporting layer, an absorption layer arranged on the heat-sensitive layer and conductive layers arranged on two sides of the heat-sensitive layer and electrically connected with the heat-sensitive layer;
the base is arranged opposite to the detector, the movable reflector is arranged on the base, the reflecting surface of the movable reflector is opposite to the absorption layer, and the movable reflector is used for moving along the direction vertical to the reflecting surface; and the substrate is provided with a light through hole for exposing the absorption layer and the movable reflector.
The embodiment of the invention discloses a preparation method of a terahertz wave detection device with adjustable absorption wavelength, which has simple process, separates a detector from a movable reflector for tuning the wavelength, enables the detection range of the detection device to cover the whole terahertz wave band, and simultaneously facilitates the improvement of the detection rate and the reduction of the thermal response time constant by a new thin film process.
Drawings
Fig. 1A to 1I are flow charts of a manufacturing process of a detection device according to an embodiment of the present invention.
FIG. 2 is a schematic diagram of a detector according to an embodiment of the present invention.
Fig. 3 is a schematic diagram of a detection apparatus according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings and embodiments of a single-point detector. It should be understood that the embodiments described herein are merely illustrative of the present invention, and the structure and fabrication method are equally applicable to a line detector, and are not intended to limit the present invention.
Fig. 1A to 1H show process steps of a method for manufacturing a terahertz wave detection device with adjustable absorption wavelength according to the present embodiment;
step 1, as shown in fig. 1A, a substrate 31 is provided, and a support layer 32 is formed on the substrate 31.
Specifically, an ultra-flat double-side polished single crystal silicon wafer is selected as the substrate 31, and the thickness uniformity of the substrate 31 does not exceed 200 nm. Under the temperature environment of about 800 ℃, a silicon nitride film with the thickness of 20-30 nm and high elastic modulus is grown on the substrate 31 by using a low-pressure vapor deposition method to form the supporting layer 32.
Step 2, as shown in fig. 1B, a thermosensitive layer 33 is formed on the support layer 32.
Specifically, the material for forming the thermosensitive layer 33 is preferably vanadium oxide having good thermoelectric properties. Further, a magnetron sputtering process is preferably adopted, and a vanadium oxide heat-sensitive film with the thickness of 5-10 nm is deposited on the surface of the supporting layer 32 at the high temperature of about 500 ℃.
And 3, as shown in fig. 1C, preferably, a photoetching process is adopted, and the portions on the two sides of the vanadium oxide thermosensitive film are etched by using chlorine reactive ions, so that only the middle portion of the thermosensitive layer 33 is reserved. Of course, in other implementations, the thermosensitive layer 33 shown in fig. 1C may be fabricated directly on the support layer 30 without etching the thermosensitive layer 33.
Step 4, as shown in fig. 1D, a conductive layer 35 is formed on the support layer 32 and the thermosensitive layer 33.
Specifically, the material of the conductive layer 35 is preferably a nichrome material. Further, a nichrome layer having a thickness of 10nm is grown on the thermosensitive layer 33 and the supporting layer 32 by a sputtering process to form a conductive layer 35 covering the thermosensitive layer 33 and the supporting layer 32, the conductive layer 35 serving to output an electric signal of the thermosensitive layer 33 to an external circuit.
And 5, as shown in fig. 1E, etching a part of the nichrome layer on the thermosensitive layer 33 by using chlorine/sulfur hexafluoride reactive ions to form conductive layers 35 respectively on two sides of the thermosensitive layer 33. This prevents the absorber layer 34 from being subsequently formed in electrical contact with the conductive layer 35.
Further, the conductive layer 35 includes a main body portion 35a attached to the support layer 32, a first conductive portion 35b formed by bending from an end of the main body portion 35a close to the heat-sensitive layer 33, and a second conductive portion 35c formed by bending from an end of the first conductive portion 35b, the first conductive portion 35b is attached to a side wall of the heat-sensitive layer 33, and the second conductive portion 35c is attached to a surface of the heat-sensitive layer 33 facing away from the support layer 32, so that stable contact between the conductive layer 35 and the heat-sensitive layer 33 can be ensured, and conductive stability of the two is improved.
Step 6, as shown in fig. 1F, an insulating layer 36 is formed on the conductive layer 35 and the thermosensitive layer 33.
In particular, forming a dense silicon nitride insulating layer with a thickness of 10nm on the conductive layer 35 and the thermosensitive layer 33 by low temperature chemical vapor deposition can further prevent the absorption layer 34 from being electrically conductive in contact with the conductive layer 35.
Step 7, as shown in fig. 1F, forms an absorption layer 34 on the insulating layer 36.
As a preferred embodiment, a nichrome layer with a thickness of 5nm is grown on the insulating layer 36 by using a sputtering process, and portions of the nichrome layer on both sides of the thermosensitive layer 33 are etched by using a chlorine/sulfur hexafluoride reactive ion etching process through a photolithography etching process, so that only the portions of the nichrome layer facing the thermosensitive layer 33 remain, thereby forming the absorption layer 34.
Step 8, as shown in fig. 1G, a plurality of continuous elongated holes are formed on the insulating layer 36, the conductive layer 35 and the supporting layer 32.
Specifically, a chlorine/sulfur hexafluoride dry etching process is used to etch partial areas of the insulating layer 36 and the conductive layer 35 on both sides of the thermosensitive layer 33, and then a hot phosphoric acid wet etching process is used to etch corresponding areas of the supporting layer 32, so as to form a plurality of spaced long holes 37 on the insulating layer 36, the conductive layer 35 and the supporting layer 32. As a preferred embodiment, a plurality of elongated holes 37 are alternately arranged, so that the insulating layer 36, the conductive layer 35 and the support layer 32 form an S-shaped multi-period heat-insulating leg structure, which prolongs the heat propagation path between the heat-sensitive layer 33 and the absorption layer 34 to the edge of the substrate 31, and reduces the heat loss of the heat-sensitive layer 33 and the absorption layer 34. In addition, the thermal conductivity parameters of probe 30 can be adjusted by adjusting the number and width of elongated holes 37.
Step 9, as shown in fig. 1H and as shown in fig. 2, a light passing hole 31a is formed on the surface of the substrate 31 facing away from the absorption layer 34.
Specifically, a xenon fluoride gas dry etching process is used to etch from the back of the substrate 31 until the whole substrate 31 is etched through, and a light through hole 31a exposing the absorption layer 34 and the S-shaped multi-period heat insulation leg structure is formed, so that terahertz waves can enter the detection device from the light through hole 31a conveniently.
In a preferred embodiment, the movable mirror 20 is a mems displacement mirror, and the moving distance of the mems displacement mirror can be controlled by an external voltage, and the step range of the mems displacement mirror can reach 500 μm, so that the detection range of the detector 30 can cover the entire terahertz band.
Specifically, the absorption layer 34 is aligned with the reflection surface of the movable mirror 20, a plurality of paste columns 40 with a thickness of 2-4 μm are used, and the two ends of the plurality of paste columns 40 are respectively pasted on the surface of the base 10 and the surface of the substrate 31, so that the base 10, the movable mirror 20 and the detector 30 form a terahertz wave detection device with adjustable absorption wavelength.
As shown in fig. 3, a terahertz wave detection device with adjustable absorption wavelength according to an embodiment of the present invention includes a movable mirror 20 and a detector 30. As shown in fig. 2, the probe 30 includes a substrate 31, a support layer 32 provided on the substrate 31, a thermosensitive layer 33 provided on the support layer 32, an absorption layer 34 provided on the thermosensitive layer 33, and conductive layers 35 provided on both sides of the thermosensitive layer 33 and electrically connected to the thermosensitive layer 33. The base 10 of the movable mirror 20 is disposed opposite to the substrate 31, the movable mirror 20 is disposed on the base 10, the reflecting surface of the movable mirror 20 faces the absorbing layer 34, the movable mirror 20 is movable in a direction perpendicular to the reflecting surface, the reflecting surface and the absorbing layer 34 form a resonator, and the substrate 31 is provided with a light transmitting hole 31a for exposing the absorbing layer 34 and the movable mirror 20. Thus, external terahertz waves can enter through the light transmitting hole 31a and are reflected to the absorption layer 34 through the movable mirror 20, the absorption layer 34 generates heat and transmits the generated heat to the thermosensitive layer 33, the resistance of the thermosensitive layer 33 is changed, and the signal of the terahertz waves can be detected by detecting the change of the resistance of the thermosensitive layer 33. In addition, the distance between the reflecting surface and the absorption layer 34 is adjusted through adjusting the movable reflecting mirror 20, so that the absorption of the terahertz waves of different wave bands by the detection device is adjusted.
The invention discloses a terahertz wave detection device with adjustable absorption wavelength and a preparation method thereof, and the terahertz wave detection device has the following beneficial effects:
(1) the detector is separated from the movable reflector for tuning the wavelength, and the mature micro-electro-mechanical system displacement reflector large-range stepping distance (up to 500 mu m) is fully utilized, so that the detection range of the detection device covers the whole terahertz waveband (0.1-10 THz).
(2) The use of a polyimide sacrificial layer (a necessary step for manufacturing a classical detector) is abandoned, the silicon nitride and vanadium oxide films are directly manufactured on the monocrystalline silicon wafer substrate at a high temperature, and the terahertz wave detection is realized by using a mode of opening a hole in the back of the substrate and transmitting light, so that the manufacturing process is simplified, the sensitivity of the detector is improved, and the thermal response time constant is reduced.
(3) By adopting the separation structure of the detector and the tuning device, the bridge surface of the detector cannot deform and generate extra noise signals in the tuning process.
The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.
Claims (10)
1. A preparation method of a terahertz wave detection device with adjustable absorption wavelength is characterized by comprising the following steps:
providing a substrate (31), and manufacturing and forming a support layer (32) on the substrate (31);
forming a heat-sensitive layer (33) on the support layer (32);
forming an electrically conductive layer on the support layer (32) and the heat-sensitive layer (33);
forming an absorption layer (34) on the thermosensitive layer (33);
making a light through hole (31a) on the surface of the substrate (31) opposite to the absorption layer (34);
the base (10) of the movable mirror (20) is fixedly connected to the substrate (31) such that the absorption layer (34) is aligned with the reflection surface of the movable mirror (20).
2. The method for manufacturing a terahertz wave detection device with tunable absorption wavelength according to claim 1, further comprising etching both side portions of the thermosensitive layer (33) after the thermosensitive layer (33) is formed on the support layer (32).
3. The method for manufacturing a terahertz wave detection device with tunable absorption wavelength according to claim 2, wherein after the conductive layer (35) is formed on the support layer (32) and the heat sensitive layer (33), the method further comprises etching a portion of the conductive layer (35) on the heat sensitive layer (33) to expose the heat sensitive layer (33).
4. The method for manufacturing a terahertz-wave detection device with tunable absorption wavelength according to claim 3, wherein after the conductive layer (35) is formed on the support layer (32) and the heat sensitive layer (33), the method further comprises forming an insulating layer (36) on the conductive layer (35) and the heat sensitive layer (33).
5. The method for manufacturing a terahertz wave detection device with adjustable absorption wavelength according to claim 4, wherein after an insulating layer (36) is formed on the conductive layer (35) and the heat sensitive layer (33), the method further comprises etching partial areas of the insulating layer (36), the conductive layer (35) and the support layer (32) on both sides of the heat sensitive layer (33) to form a plurality of continuous elongated holes (37) on the insulating layer (36), the conductive layer (35) and the support layer (32).
6. The method for manufacturing a terahertz wave detection device with adjustable absorption wavelength according to claim 1, wherein the base (10) is fixedly connected to the substrate (31) so that the absorption layer (34) is aligned with the reflection surface of the movable mirror (20) by: a plurality of adhesive posts (40) are formed, and both ends of the plurality of adhesive posts (40) are respectively adhered to the base (10) and the substrate (31).
7. The method for manufacturing the terahertz wave detection device with the adjustable absorption wavelength according to claim 1, wherein the support layer (32) is formed on the substrate (31) by a low-pressure vapor deposition process, the support layer (32) is a silicon nitride layer, and the thickness of the support layer (32) ranges from 20 nm to 30 nm.
8. The method for preparing the terahertz wave detection device with the adjustable absorption wavelength according to claim 1, wherein the thermosensitive layer (33) is formed on the support layer (32) by a magnetron sputtering process, the thermosensitive layer (33) is a vanadium oxide layer, and the thickness of the thermosensitive layer (33) is 5-10 nm.
9. The method for manufacturing a terahertz wave detection device with adjustable absorption wavelength according to claim 4, wherein the absorption layer (34) is formed on a portion of the insulating layer (36) facing the thermosensitive layer (33) by a magnetron sputtering process, the absorption layer (34) is a nichrome layer, and the thickness of the absorption layer (34) is 5 nm.
10. The terahertz wave detection device with adjustable absorption wavelength is characterized by comprising a movable reflector (20) and a detector (30);
the detector (30) comprises a substrate (31), a supporting layer (32) arranged on the substrate (31), a heat-sensitive layer (33) arranged on the supporting layer (32), an absorbing layer (34) arranged on the heat-sensitive layer (33) and conductive layers (35) which are arranged on two sides of the heat-sensitive layer (33) and electrically connected with the heat-sensitive layer (33);
the base (10) of the movable reflector (20) is arranged opposite to the detector (30), the reflecting surface of the movable reflector (20) is opposite to the absorption layer (34), and the movable reflector (20) is used for moving in the direction vertical to the reflecting surface; the substrate (31) is provided with a light transmitting hole (31a) for exposing the absorption layer (34) and the movable mirror (20).
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