CN105990385A - 用于图像传感器的光敏电容器像素 - Google Patents

用于图像传感器的光敏电容器像素 Download PDF

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CN105990385A
CN105990385A CN201610072734.XA CN201610072734A CN105990385A CN 105990385 A CN105990385 A CN 105990385A CN 201610072734 A CN201610072734 A CN 201610072734A CN 105990385 A CN105990385 A CN 105990385A
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electrode
transistor
dielectric layer
light
layer
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CN105990385B (zh
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杨武璋
刘家颖
熊志伟
艾群咏
戴森·H·戴
多米尼克·马塞提
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Omnivision Technologies Inc
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Abstract

本申请案涉及用于图像传感器的光敏电容器像素。揭示一种图像传感器像素及图像传感器以及制造图像传感器像素及图像传感器的方法。所述图像像素包含光敏电容器及晶体管网络。所述光敏电容器包含电极、导电层、电介质层以及光敏半导体材料。所述导电层被安置在所述电极周围，且所述电介质层形成于所述导电层与所述电极之间。所述光敏半导体材料是用于响应于图像光产生图像信号且被安置于所述电介质层与所述电极之间。所述晶体管网络经耦合以从所述光敏电容器的所述电极读出所述图像信号。

Description

用于图像传感器的光敏电容器像素
技术领域
本发明大体上涉及图像感测，且更特定来说涉及作为图像传感器内的像素的光敏电容器。
背景技术
图像传感器是一种将光(呈光学图像的形式)转换成电子信号的电子装置。现代图像传感器通常为半导体电荷耦合装置(“CCD”)或使用互补金属氧化物半导体(“CMOS”)技术制造的有源像素传感器。
在许多现代电子装置中CMOS图像传感器已经变得无处不在。手机、膝上型计算机及相机都可利用CMOS图像传感器作为主要的图像/光检测方法。装置制造者正努力减小成本及提高图像传感器的性能以满足零售及商业需求。现有CMOS图像传感器制造与标准CMOS制造过程不同，其给制造图像传感器添加了额外的步骤、时间及成本。
发明内容
本发明一方面涉及一种图像传感器像素，其包括：光敏电容器，其包括：沿着轴延伸的电极；安置在所述电极周围的导电层；电介质层，其形成于所述导电层与所述电极之间使得所述导电层不接触所述电极；以及光敏半导体材料，其用于响应于图像光产生图像信号，其中所述光敏半导体材料安置于所述电介质层与所述电极之间；以及晶体管网络，其经耦合以从所述光敏电容器的所述电极读出所述图像信号。
在本发明的另一方面，一种图像传感器包括：具有前侧及背侧的半导体衬底层；沿着所述半导体衬底层的所述前侧耦合的互连层；用于捕获图像的像素阵列，其中所述像素阵列中的每一像素包含晶体管网络及光敏电容器，且其中沿着所述半导体衬底层的所述前侧安置所述晶体管网络，且所述光敏电容器安置于所述互连层内且经定位以成为前侧照明的，所述光敏电容器包括：沿着轴延伸的电极，导电层安置在所述电极的周围；形成于所述导电层与所述电极之间的电介质层；以及光敏半导体材料，其用于响应于图像光产生图像信号，其中所述光敏半导体材料安置于所述电介质层与所述电极之间，所述晶体管网络经耦合以从所述光敏电容器的所述电极读出所述图像信号。
在本发明的另一方面，一种制造用于图像传感器的像素阵列的方法包括：沿着半导体衬底的前侧在所述半导体衬底层中形成晶体管网络；针对所述像素阵列中的每个像素形成接触元件，其中每一接触元件电耦合到所述晶体管网络内的晶体管；在所述半导体衬底层的所述前侧上方形成互连层，其中所述互连层是用于协助控制所述晶体管网络，且其中所述互连层包含覆盖所述接触元件的电介质；在所述互连层中形成腔，其中在所述接触元件上方形成所述腔；沿着所述腔的腔壁形成导电层；在所述腔内的所述导电层上方形成电介质层；在所述腔内且在所述电介质层上方沉积光敏半导体材料；在所述接触元件上方形成电极腔，其中所述电极腔延伸到所述接触元件；运用导电材料至少局部填充所述电极腔以形成电极，其中所述电极、所述导电层及所述光敏半导体材料形成光敏电容器，所述光敏电容器经配置以响应于图像光而改变由所述接触元件接收的图像信号。
附图说明
参考以下图式描述本发明的非限制及非详尽实施例，其中贯穿各种视图相似的元件符号指代相似部件，除非另有说明。
图1为示意性说明根据本发明的实施例的成像***的一个实例的框图，所述成像***包含像素阵列，所述像素阵列包含光敏电容器像素。
图2说明根据本发明的实施例的包含于像素中的光敏电容器的一个实例。
图3A到3I展示根据本发明的实施例的用于制造光敏电容器像素的实例过程。
图4说明根据本发明的实施例的耦合到包含于像素中的晶体管的栅极的光敏电容器的一个实例。
图5展示在像素中使用低温多晶硅及透明电极的现有方法的示意模型。
图6说明根据本发明的实施例的包含光敏电容器的像素的示意模型。
图7A到B说明根据本发明的实施例的包含耦合到像素的晶体管的栅极的光敏电容器的像素的示意模型。
图7C说明根据本发明的实施例的用于操作图7A中说明的像素的实例时序图。
具体实施方式
本文中描述图像传感器像素及包含光敏电容器的图像传感器的实施例。在本发明中还描述制造及操作包含光敏电容器的像素的方法。在以下描述中，陈述众多特定细节以提供对实施例的详尽理解。然而，相关领域的技术人员将认识到，可无需运用所述特定细节中的一或多者或运用其它方法、组件、材料等等而实践本文中描述的技术。在其它情况中，未详细展示或描述众所周知的结构、材料或操作以避免使某些方面模糊。
贯穿此说明书对“一个实施例”、“实施例”的参考意味着与所述实施例相结合而描述的特定特征、结构或特性包含于本发明的至少一个实施例中。因此，贯穿此说明书在多个地方出现短语例如“在一个实施例中”或“在实施例中”并不一定都指代相同的实施例。此外，在一或多个实施例中特定的特征、结构或特性可以任何合适的方式组合。
图1为示意性说明根据本发明的实施例的成像***100的一个实例的框图，成像***100包含光敏电容器像素的像素阵列102。成像***100包含像素阵列102、控制电路108、读出电路104及功能逻辑106。如所描绘的实例中展示，成像***100包含耦合到控制电路108的像素阵列102及读出电路104。读出电路104耦合到功能逻辑106。控制电路108耦合到像素阵列102以控制像素阵列102的操作特性以便捕获通过由像素阵列102接收的图像光产生的图像。举例来说，控制电路108可产生用于控制图像采集的一快门信号或多个快门信号。
在一个实例中，像素阵列102为图像传感器或像素110(举例来说，像素P1、P2……Pn)的二维(2D)阵列。在一个实例中，每一像素110包含光敏电容器，其耦合到晶体管以协助读出。如说明，每一像素110被布置成行(举例来说，行R1到Ry)及列(举例来说，列C1到Cx)以采集个人、位置、物体等等的图像数据，接着可使用所述图像数据再现所述个人、位置、物体等等的图像。
在一个实例中，在每一像素110已采集其图像数据或图像电荷之后，接着由读出电路104通过读出列112读出图像数据且将其转移到功能逻辑106。在各种实例中，读出电路104可包含放大电路、模/数(ADC)转换电路或其它。功能逻辑106可简单存储图像数据或甚至通过应用后图像效果(举例来说，剪裁、旋转、消除红眼、调整亮度、调整对比度或其它)操纵所述图像数据。在一个实例中，读出电路104可沿着读出列线一次读出一行图像数据(已说明)，或可使用例如串行读出或同时全并行读出所有像素的多种其它技术(未说明)来读出所述图像数据。
图2说明根据本发明的实施例的包含于像素210中的光敏电容器230的实例的横截面。像素210为像素110的一个实例。像素210包含光敏电容器230，光敏电容器230包含电极235、导电层233、电介质层232及光敏半导体材料231。电极235用作光敏电容器230的一个导体或“板”，且导电层233用作光敏电容器230的第二导体或“板”。在一个实施例中，导电层233成形为像一根管。电介质层232使导电层233从光敏半导体材料231隔离，光敏半导体材料231安置于电极235与电介质层232之间。在一个实施例中，光敏半导体材料231包含低温多晶硅。在一个实施例中，光敏半导体材料231包含非晶多晶硅。非晶多晶硅通常阻断大于650nm的波长。使用非晶多晶硅作为光敏半导体材料231可能允许消除像素410上方的红外滤波器以拒绝非可见光谱以上的光。导电层233可为金属，例如氮化钛(“TiN”)或氮化钽(“TaN”)。
在操作上，光敏半导体材料231沿着电极235沿着其延伸的轴接收图像光205。图像光205可在遇到光敏半导体材料231之前传播通过钝化层243。图像光205还可在遇到光敏半导体材料231之前穿过未知的额外光学器件(举例来说，透镜)及滤波器(举例来说，彩色滤光器)。光敏半导体材料231响应于接收图像光205产生呈光电子形式的图像信号。所述光电子经由电极235(且在所说明的实施例中经由金属连接件236)流动到存储节点221。在曝光持续时间(又称为“积分时期”)之后，由电荷存储节点221中的图像信号产生的图像电荷可被转移到浮动漏极223且最终由读出电路读出。转移晶体管641包含栅极227、电荷存储节点221及浮动扩散223。为了将图像电荷从电荷存储节点221转移到浮动扩散223，通过将电压施加到栅极227激活转移晶体管641。通常，负电压将激活P型晶体管而正电压(超过阈值电压)将激活N型晶体管。
在图2中，沿着半导体衬底280的前侧281安置转移晶体管641。前侧281与半导体衬底280的背侧282相对。半导体衬底280可为P掺杂硅，且存储节点221及浮动扩散223可为N掺杂的。图2展示像素210为前侧照明像素，且所属领域的技术人员可将包含于像素阵列210中的图像传感器视为前侧照明图像传感器，因为图像光205将在遇到背侧282之前遇到衬底280的前侧281。相比之下，背侧照明图像传感器通常薄化半导体衬底的背侧，使得存储节点221(用作光电二极管)从经薄化的半导体衬底的背侧接收图像光。具有常规光电二极管像素的背侧照明图像传感器通常提供比具有常规光电二极管像素的前侧照明图像传感器好的光学效率，因为图像光无须行进通过吸收一部分图像光的互连层(用于控制光电二极管的读出)。
在图2中，图像光205无须通过互连层行进到光电二极管。实情是，图像光205遇到光敏电容器230的光敏半导体材料231，而无需行进通过包含金属层251、252及层间电介质290的互连层。在所说明的实施例中，电极235沿着轴延伸且光敏半导体材料231被同轴安置在电极235周围。在一个实施例中，电极235为圆柱形的，尽管在其它实施例中其可被不同地成形。在所说明的实施例中，光敏半导体材料231被成形为集中在电极沿其延伸的轴周围的倒截锥。在所说明的实施例中，所述倒截锥的较宽端经定位以接收图像光205。较宽端与最靠近电荷存储节点221的所述倒截锥的较窄端相对。
在一个实施例中，电极235由高度掺杂(N+)的低温多晶硅组成。在另一实施例中，电极235为金属。在一个实施例中，电介质层232为高K电介质。在一个实施例中，电介质层232为具有固定的负电荷的带负电荷的材料。负电荷层可诱导电介质层232与光敏半导体材料231的界面处的耗尽区，此将防止光生电子过滤进入电介质层中。实情为，光生电子将更可能朝向电极235流动且最终进入电荷存储节点221中。当然，电介质层232还用作导电层233与光敏半导体材料231之间的非导电缓冲层。在一个实施例中，针对负电荷层使用铪铝氧化物。
图3A到3I展示根据本发明的实施例的用于制造光敏电容器像素210的实例过程。应理解，所揭示的用以制造一个像素的技术可用以在半导体衬底上制造光敏电容器像素阵列。
图3A展示可为P掺杂硅的半导体衬底280。支撑每一像素的晶体管网络形成于衬底280中，尽管图3A中并未展示所有晶体管。下文将结合图6及7A论述晶体管网络且其可取决于所实施的特定实施例而不同。晶体管641包含存储节点221、栅极227及浮动扩散223。可使用常规方法沿着衬底280的前侧281形成存储节点221、栅极227及浮动扩散223以形成CMOS晶体管(举例来说，扩散或植入)。也可沿着衬底280的前侧281形成晶体管网络中的其它晶体管(图3A中未展示)。
在所说明的实施例中，存储节点221包含P钉扎层262，其可减小衬底280与形成于图3B中的层间电介质290之间的界面处的暗电流。接触层261形成于存储节点221中。与存储节点221的N-掺杂相比，接触层261可为N+掺杂的。
图3B展示在实例制造过程中的下一阶段。在图3B中，高K电介质层263形成在电荷存储节点221上方且互连层形成在半导体衬底280的前侧281上。互连层协助控制像素晶体管网络以读出光敏电容器。互连层包含金属层251及252，也包含层间电介质290。接触元件236经形成以连接到接触层261。接触元件236可经形成作为第一金属层251的形成部分。在图3B中，接触元件236包含向下延伸到接触层261的变黑的矩形。在接触元件236形成之后，层间电介质290形成在接触元件236上方。在层间电介质290形成在金属层上方之后，腔293形成于接触元件236上方的层间电介质290中。
图3C展示实例制造过程中的另一阶段。在图3C中，导电层233被沉积于腔293中、腔293的侧壁上以及层间电介质290上。在一些实施例中，在导电层233前形成薄缓冲电介质层(未展示)，使得导电层233形成在薄缓冲电介质层上。在图3D中，将导电层233的底部部分从腔293的底板移除。举例来说，可通过图案化蚀刻移除导电层233的底部部分。在图3E中，电介质层232形成在腔293内的导电层233上方。
在图3F中，在腔内且在电介质层232上方形成光敏半导体材料231。在一个实施例中，光敏半导体材料231为低温多晶硅。当多晶硅形成时，第一沉积部分可包含比随后沉积部分高的掺杂浓度(在一个实例中为P掺杂)。此导致具有梯度的低温多晶硅沿着沿着电介质层232的光敏半导体材料231的外部部分具有增加的掺杂浓度。导电层233可为反射的以将所接收的图像光205重新引导到光敏半导体材料231中。
在图3G中，电极腔237形成在接触元件236上方。在图3G中，电极腔237通过层间电介质290、电介质232以及光敏半导体材料231延伸到接触元件236。
在图3H中，电极腔237填充有导电材料以形成电极235。在其它实施例中，腔237可仅经局部填充以形成电极235。在所说明的过程中，腔237界定电极235的形状。腔237及电极235可为圆柱形。电极235可为金属或N+多晶硅。在电极235形成于电极腔237中之后，顶部电介质层243形成在导电层233、光敏半导体材料231及电介质层232上方。
图3I展示制造过程中的下一阶段。在图3I中，接合垫层253及遮光元件241形成在顶部电介质层243上方。可从相同的金属层图案化接合垫层253及遮光元件241。可通过顶部电介质层243形成导电通孔247以将电信号(举例来说，偏置电压)提供到导电层233。
图5展示在像素501中使用低温多晶硅及透明电极的现有方法的示意性模型。在像素501中，模型化为二极管的存储节点(SN)耦合到转移晶体管TX以读出光电二极管。具有透明导电电极的多晶硅形成也耦合到转移晶体管的肖特基(Schottky)二极管。当图像光遇到多晶硅时，由多晶硅产生的光电子影响存储节点内的图像电荷，可接着由转移晶体管将图像电荷转移到浮动扩散。
与图5相比，图6说明根据本发明的实施例的包含光敏电容器230的像素601的示意性模型。像素601包含耦合到转移晶体管641的光敏电容器230。转移晶体管641包含电荷存储节点221及浮动扩散223。电极235/236耦合到电荷存储节点221。电极235/236为光敏电容器230的一个“板”，且导电层233为光敏电容器230的另一“板”。当光敏电容器230接收图像光205时，在光敏半导体材料231中产生呈光电子形式的图像信号。由光敏半导体材料231产生的图像信号将修改电极235/236及对应电荷存储节点221上的电势。转移晶体管641包含于经耦合以从电极235/236读出图像电荷的晶体管网络中。在图6中，晶体管网络包含转移晶体管(TX T1)641、复位晶体管(RST T2)642、源极跟随器晶体管(SF T3)643以及行选择晶体管(SEL T4)644。转移晶体管网络可通过将图像电荷转移到浮动扩散223来读出图像信号。晶体管643放大图像信号且当晶体管644被激活时，可将所述放大的信号读出到读出列上。可使用偏置电压657偏置导电层233。当复位晶体管642被启用时复位晶体管642可复位浮动扩散223。导电层233上的偏置电压657可为供给电极235/236更高电势的负电压，使得当由图像光205产生光电子时其将朝向电极235流动。
复位晶体管T2642在复位信号RST的控制下耦合于复位电压VRST与浮动扩散FD223之间以复位像素601(举例来说，使FD放电或充电到预先设定的电压)。复位电压VRST被固定到根据像素601的特定实施方案的预先设定的电压。浮动扩散FD 223经耦合以控制SF晶体管T3643的栅极。SF晶体管T3耦合于电源轨VDD与行选择晶体管T4644之间。SF晶体管T3643操作作为将高阻抗连接提供到浮动扩散FD 223的源极跟随器。在一个实施例中，由控制电路108产生TX信号、RST信号及SEL信号。
图4说明根据本发明的实施例的耦合到包含于像素410中的晶体管的栅极427的光敏电容器230的一个实例。像素410为像素110的一个实例。图4类似于图3I中说明的像素，除了电极235/236耦合到包含漏极421、源极423及栅极427的源极跟随器晶体管743的栅极427之外。当图像光205在光敏半导体材料231中产生图像信号时，其修改栅极427上的电势。可与图3I中说明的像素类似地制造图4中说明的像素。像素410与像素210的不同之处在于，电极235及触点236耦合到栅极而不是耦合到电荷存储节点。
图7A说明根据本发明的实施例的像素701的示意性模型，像素701包含耦合到像素410的晶体管743的栅极427的光敏电容器230。当栅极427上的电势由图像信号修改时，在源极423中产生放大的图像信号。读出图像信号的晶体管网络包含源极跟随器晶体管SF 743及经耦合以将放大的图像信号转移到所说明的读出列的行选择晶体管SEL 744。复位晶体管742任选地包含于晶体管网络中且在曝光时期之后耦合到复位电极235/236及栅极427。
图7B展示光敏电容器C1230及电容器C2748的示意性模型，电容器C2748为晶体管743的栅极电容。在光敏半导体材料231中产生电子的图像光205用作两个串联的电容器之间的电流源。如果电容器C2小于C1，就在跨越C2748的较大的电压中反射C1230上的小的电压变化。通过以下给出串联电容器的总电容：
C T = C 1 C 2 C 1 + C 2 (等式1)
其中CT为串联的C1及C2的总电容。通过以下给出跨越C1230的电压：
V 1 = V B C T C 1 (等式2)
其中V1为跨越C1230的电压且VB为偏置电压757。通过以下给出跨越晶体管743的栅极的电压：
V 2 = V B C T C 2 (等式3)
其中V2为跨越C2748的电压。源极跟随器晶体管中的栅极电容通常为小的，且因此C2748的电容可经设计以在C2748与C1230之间拆分偏置电压757。如果源极跟随器743为N型，偏置电压757就将为正电压。可经由耦合到接合垫253的通孔将偏置电压757施加到导电层233。
图7C说明根据本发明的实施例的像素701的操作方法的实例时序图。在时间零处，偏置电压757为低(举例来说，在零与-1.0V之间)，行选择晶体管SEL 744为低(未启用)，且节点747(晶体管743的栅极427)为低。在时间t1处，行选择晶体管SEL 744被启用，其将基线信号781读出到读出列。在时间t2处，行选择晶体管SEL 744被禁用，且导电层233被偏置到反射到节点747上的正偏置电压(举例来说，3伏)。在时间t2与t3之间(像素701的积分时期)，节点747上的电压降低，因为电子由影响光敏半导体材料231的图像光205产生。在时间t2与t3之间高强度图像光205将增大节点747上的电压斜坡，而在时间t2与t3之间低强度图像光205将减小节点747上的电压斜坡。在t3处，行选择晶体管SEL 744被启用，其将图像信号782读出到读出列。在时间t4处，偏置电压757被驱动为低，且行选择晶体管SEL 744被禁用。可从图像信号782减去基线信号781以产生噪声校正信号。如果复位晶体管742包含于像素701中的晶体管网络中，在时间t4之后其就将经脉冲化以复位节点747。
使用所揭示的包含光敏电容器的像素的图像传感器可比常规方法与标准逻辑及动态随机存取存储器(“DRAM”)制造更加兼容。特定来说，所揭示的像素无需深植入及针对常规CMOS图像传感器使用的特殊隔离过程。另外，由于光敏元件(光敏电容器230)在制造结束时形成，所以其避免当前用以在常规背侧照明CMOS图像传感器中形成像素的晶片处理及薄化。此外，可运用两个像素实施图4中的实施例及图7A中的模型，其中常规方法需要晶体管网络中的三个或四个像素以读出每一像素。减少晶体管数目可增大用于像素中的光敏材料的区域，借此提高图像传感器的性能。
可运用计算机软件及硬件实施上文阐释的操作像素及图像传感器的方法。所描述的技术可组成体现于有形或非暂时机器(举例来说，计算机)可读的存储介质内的机器可执行的指令，当由机器执行所述指令时将导致机器执行所描述的操作。另外，所述过程可体现于硬件内，例如专用集成电路(“ASIC”)或其它。
有形非暂时机器可读存储介质包含提供(即，存储)呈由机器(举例来说，计算机、网络装置、个人数字助理、制造工具、具有一或多个处理器的集合的任何装置等等)可存取形式的信息的任何机构。举例来说，机器可读的存储介质包含可录/不可录的介质(举例来说，只读存储器(ROM)、随机存取存储器(RAM)、磁盘存储介质、光盘存储介质、快闪存储器装置等等)。
本发明所说明的实施例的上文描述，包含说明书摘要中所描述的内容，不希望为详尽的或将本发明限制于所揭示的精确形式。虽然出于说明的目的，本文中描述本发明的特定实施例及实例，但相关领域的技术人员应认识到，在本发明的范围内，各种等效修改为可能的。
鉴于上文详细的描述，可对本发明做出这些修改。所附权利要求书中所使用的术语不应被解释为将本发明限制于说明书中揭示的特定实施例。实情是，本发明的范围将完全由所附权利要求确定，所述权利要求应根据权利要求解释的公认原则来解释。

Claims (27)

1.一种图像传感器像素，其包括：
光敏电容器，其包括：
沿着轴延伸的电极；
安置在所述电极周围的导电层；
电介质层，其形成于所述导电层与所述电极之间使得所述导电层不接触所述电极；以及
光敏半导体材料，其用于响应于图像光产生图像信号，其中所述光敏半导体材料安置于所述电介质层与所述电极之间；以及
晶体管网络，其经耦合以从所述光敏电容器的所述电极读出所述图像信号。
2.根据权利要求1所述的图像传感器像素，其中所述晶体管网络包含具有浮动扩散的转移晶体管及耦合到所述光敏电容器的所述电极的电荷存储节点，其中当所述转移晶体管被激活时所述转移晶体管将由所述图像信号产生的图像电荷从所述电荷存储节点转移到所述浮动扩散。
3.根据权利要求2所述的图像传感器像素，其中所述电极包含高度掺杂的多晶硅，且其中以与所述高度掺杂的多晶硅相同的掺杂极性轻度掺杂所述电荷存储节点。
4.根据权利要求1所述的图像传感器像素，其中所述晶体管网络包含具有耦合到所述光敏电容器的所述电极的栅极的源极跟随器晶体管，其中所述源极跟随器晶体管响应于所述电极上的所述图像信号产生放大的图像信号，且其中所述晶体管网络进一步包含经耦合以将所述放大的图像信号转移到读出线的行选择晶体管。
5.根据权利要求4所述的图像传感器像素，其中所述晶体管网络进一步包含复位晶体管，所述复位晶体管经耦合以当所述复位晶体管被激活时复位所述源极跟随器晶体管的所述栅极。
6.根据权利要求1所述的图像传感器像素，其中所述导电层同轴地缠绕在所述电极周围。
7.根据权利要求1所述的图像传感器像素，其中所述电介质层符合所述导电层的形状。
8.根据权利要求1所述的图像传感器像素，其中所述电介质层为高K电介质层。
9.根据权利要求1所述的图像传感器像素，其中所述电介质层包含负电荷层以诱导所述电介质层与所述光敏半导体材料的界面处的耗尽区。
10.根据权利要求9所述的图像传感器像素，其中所述负电荷层包含铪铝氧化物。
11.根据权利要求1所述的图像传感器像素，其中所述导电层对所述图像光为反射的。
12.根据权利要求1所述的图像传感器像素，其中所述导电层形成截锥，且其中所述截锥的宽端经定位以接收所述图像光，所述宽端相对所述截锥的较窄端安置。
13.根据权利要求1所述的图像传感器像素，其中在具有增大的掺杂浓度的梯度下在沿着所述电介质层安置的所述光敏半导体材料的外部部分中掺杂所述光敏半导体材料。
14.一种图像传感器，其包括：
具有前侧及背侧的半导体衬底层；
沿着所述半导体衬底层的所述前侧耦合的互连层；
用于捕获图像的像素阵列，其中所述像素阵列中的每一像素包含晶体管网络及光敏电容器，且其中沿着所述半导体衬底层的所述前侧安置所述晶体管网络，且所述光敏电容器安置于所述互连层内且经定位以成为前侧照明的，所述光敏电容器包括：
沿着轴延伸的电极，导电层安置在所述电极的周围；
形成于所述导电层与所述电极之间的电介质层；以及
光敏半导体材料，其用于响应于图像光产生图像信号，其中所述光敏半导体材料安置于所述电介质层与所述电极之间，所述晶体管网络经耦合以从所述光敏电容器的所述电极读出所述图像信号。
15.根据权利要求14所述的图像传感器，其中所述导电层同轴缠绕在所述电极周围。
16.根据权利要求14所述的图像传感器，其中所述电介质层为高K电介质层。
17.根据权利要求14所述的图像传感器，其中所述电介质层包含负电荷层以诱导所述电介质层与所述光敏半导体材料的界面处的耗尽区。
18.一种制造用于图像传感器的像素阵列的方法，所述方法包括：
沿着半导体衬底的前侧在所述半导体衬底层中形成晶体管网络；
针对所述像素阵列中的每个像素形成接触元件，其中每一接触元件电耦合到所述晶体管网络内的晶体管；
在所述半导体衬底层的所述前侧上方形成互连层，其中所述互连层是用于协助控制所述晶体管网络，且其中所述互连层包含覆盖所述接触元件的电介质；
在所述互连层中形成腔，其中在所述接触元件上方形成所述腔；
沿着所述腔的腔壁形成导电层；
在所述腔内的所述导电层上方形成电介质层；
在所述腔内且在所述电介质层上方沉积光敏半导体材料；
在所述接触元件上方形成电极腔，其中所述电极腔延伸到所述接触元件；
运用导电材料至少局部填充所述电极腔以形成电极，其中所述电极、所述导电层及所述光敏半导体材料形成光敏电容器，所述光敏电容器经配置以响应于图像光而改变由所述接触元件接收的图像信号。
19.根据权利要求18所述的方法，其中所述导电层对所述图像光为反射的。
20.根据权利要求18所述的方法，其中所述接触元件耦合到转移晶体管的电荷存储节点，其中所述转移晶体管经耦合以当所述转移晶体管被激活时将由所述光敏电容器产生的图像电荷转移到所述半导体衬底层内的浮动扩散。
21.根据权利要求18所述的方法，其中所述接触元件耦合到响应于由所述光敏电容器产生的图像电荷而产生放大的图像信号的源极跟随器晶体管的控制端子。
22.根据权利要求18所述的方法，其进一步包括：
在于所述腔壁上沉积所述导电层之前在所述腔壁上形成缓冲电介质层。
23.根据权利要求18所述的方法，其进一步包括：
在形成所述电介质层之前移除安置在所述腔的底板上的所述导电层的底部部分。
24.根据权利要求18所述的方法，其中所述光敏半导体材料包含非晶硅。
25.根据权利要求18所述的方法，其中所述在所述腔内沉积所述光敏半导体材料包含在所述沉积的开始处比所述沉积的结束处更多地掺杂所述光敏半导体材料。
26.根据权利要求18所述的方法，其进一步包括：
在所述导电层、所述光敏半导体材料及所述电介质层上方形成顶部电介质层；以及
通过所述顶部电介质层形成到所述导电层的导电通孔以用于将电信号提供到所述导电层。
27.根据权利要求18所述的方法，其中所述形成所述接触元件包含在所述电介质层内形成金属接触层。
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