CN105987757A - Terahertz focal plane array and detecting and imaging device - Google Patents
Terahertz focal plane array and detecting and imaging device Download PDFInfo
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- CN105987757A CN105987757A CN201510100794.3A CN201510100794A CN105987757A CN 105987757 A CN105987757 A CN 105987757A CN 201510100794 A CN201510100794 A CN 201510100794A CN 105987757 A CN105987757 A CN 105987757A
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- focal plane
- fpa
- cantilever beam
- terahertz
- plane arrays
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Abstract
The invention discloses a terahertz focal plane array which comprises a frame, cantilever beams, and an absorption structure. The absorption structure comprises a first metal layer, a first dielectric layer and a metal square array in sequential stacking. Two cantilever beams are at opposite sides of the metal square array. Each of the cantilever beams is a multi-material deformation beam which is formed by the sequential end-to-end connection of longitudinal and transverse parts, one end of the cantilever beam is fixedly connected to the frame, and the other end is fixedly connected to the absorption structure. The resonant cavity of a super material is formed by the terahertz focal plane array and has strong absorption ability to the low energy terahertz radiation.
Description
Technical field
The invention belongs to MEMS field, particularly relate to a kind of Terahertz focal plane arrays (FPA) and detection and become
As device.
Background technology
Terahertz emission is the electromagnetic radiation from 0.1-10THz, and Terahertz Technology can not show a candle to its both sides wave band
Infrared ripe with microwave irradiation technology, but in recent years, along with new material technology provides the transmitting of more power
Source, Terahertz Technology be proved to deeper into physical study and actual application in have wide should
By prospect it is considered to be change " T-Ray " of one of ten big technology of future world.
THz imaging technology mainly comes from the light spectrum image-forming ability of its phase sensitive to the captivation of people,
Utilize this point it is likely that realize material and differentiate and functional imaging.Terahertz system is used for dielectric material
Imaging be ideal, the imaging including paper, plastics and pottery etc..These materials are to this wave band phase
It is non-absorbent from the point of view of to, but owing to refractive index is different, utilizes the phase information of Terahertz, different materials
Material is easy to be resolved, and THz imaging technology becomes the focus in imaging research.
But, owing to the electron energy ratio of terahertz emission is relatively low, 1THz about 4.1meV, to its signal
Detection difficulty is relatively big, and the terahertz emission how detecting signal energy low becomes in THz imaging technology
Difficult point.
Summary of the invention
It is an object of the invention to overcome deficiency of the prior art, it is provided that the Terahertz of a kind of strong absorption
Focal plane arrays (FPA) and detection and imaging device.
For achieving the above object, the technical scheme is that
Including framework, cantilever beam and absorbing structure;Wherein,
Absorbing structure, including the first metal layer stacked gradually, first medium layer and metal squares array;
Cantilever beam, two cantilever beams lay respectively at the opposite side of metal squares array, and each cantilever beam is
The many material deformations beam being in turn connected to form by vertical portion and transverse part head and the tail, its one end is fixing with framework to be connected,
The other end is fixing with absorbing structure to be connected.
Optionally, absorbing structure also includes split ring resonator, and split ring resonator is positioned on first medium layer
And around metal squares array.
Optionally, the opening of split ring resonator is arranged along the formed symmetrical of metal squares array.
Optionally, also including second dielectric layer, second dielectric layer is positioned under the first metal layer, cantilever beam
The other end and second dielectric layer fixing be connected.
Optionally, described second dielectric layer is to have the block structure of same size with the first metal layer.
Optionally, cantilever beam is laminated construction, and at least one section of cantilever beam, at least a kind of material is not
It is same as the material of other sections.
Optionally, adjacent vertical portion includes different materials, and transverse part uses the material in one of them vertical portion.
Optionally, a vertical portion is formed by the first material, the vertical portion being adjacent by the first material and its
On the second material lamination formed.
Optionally, described cantilever beam is the structure of monolayer, at least one section of cantilever beam employing and other
The material of Duan Butong.
Additionally, present invention also offers a kind of Terahertz detection and imaging device, with any of the above-described terahertz
The visible ray of hereby focal plane arrays (FPA) reflection is as input.
The Terahertz focal plane arrays (FPA) that the embodiment of the present invention provides, has the first gold medal including stacking gradually
Belong to layer, first medium layer and the absorbing structure of metal squares array, and many material deformations beam, this suction
Receive structure and define the resonator cavity of Meta Materials, the terahertz emission that energy is low is had stronger absorbability,
After absorbing terahertz emission, absorbing structure temperature raises and passes to the deformation beam of many materials, many materials
The different materials of deformation beam has the different coefficients of expansion, when there being heat to transmit, it may occur that thermal deformation,
Under this thermal deformation drives, absorbing structure deflects so that the visible ray of metal squares array reflection becomes
Change, by detecting this visible ray, it is achieved the detection of terahertz signal and recycling.
Additionally, be also formed with the split ring resonator around metal squares array, widen further terahertz
The adsorption frequency hereby radiated.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme that the present invention implements, below will be to required in embodiment
The accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only the present invention
Some embodiments, for those of ordinary skill in the art, before not paying creative work
Put, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the plan structure schematic diagram of the Terahertz focal plane arrays (FPA) according to the embodiment of the present invention;
Fig. 2 is the cross section structure schematic diagram of the Terahertz focal plane arrays (FPA) according to the embodiment of the present invention.
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, the most right
The detailed description of the invention of the present invention is described in detail.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but the present invention
Other can also be used to be different from alternate manner described here implement, those skilled in the art can be not
Doing similar popularization in the case of running counter to intension of the present invention, therefore the present invention is not by following public specific embodiment
Restriction.
Secondly, the present invention combines schematic diagram and is described in detail, when describing the embodiment of the present invention in detail, for ease of
Illustrate, represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is only
Being example, it should not limit the scope of protection of the invention at this.Additionally, should comprise in actual fabrication length,
Width and the three-dimensional space of the degree of depth.
With reference to shown in Fig. 1 and Fig. 2, wherein Fig. 2 is the cross section structure schematic diagram in dotted line direction along Fig. 1,
In an embodiment of the present invention, absorbing structure includes the first metal layer 110, the first medium stacked gradually
Layer 108 and metal squares array, metal squares array is the array being made up of metal squares 104, gold
Belonging to square can be square or rectangular, and the first metal layer 110 and first medium layer 108 are essentially
The shape of the outline of metal squares array, for block structure, is i.e. situated between at the first metal layer 110 and first
Matter layer 108 does not has hollow out or the pattern of non-hollow out, certainly, in order to improve absorbance or adsorption frequency etc.
Purpose, it is also possible to pattern in the first metal layer 110 and/or first medium layer 108.This absorption
Structure defines the resonator cavity of Meta Materials, and it is adjustable that Meta Materials has dielectric constant, pcrmeability and refractive index
Unique property, it is achieved the superabsorbent of the terahertz emission low to energy.Week at metal squares array
Collarette is arranged with metal square frame array spacings around split ring resonator 102, split ring resonator 102, opening
Resonant ring 102 is also metal material, and its opening 1021 can set along the formed symmetrical of metal squares array
Put, the frequency of absorbed radiation can be widened.
In a specific embodiment, metal squares array is the array of metal squares 104 composition of 2x3,
The opening 1021 of split ring resonator 102 is positioned at the top in the gap of two row metal squares, and along this gap
It is symmetrical arranged.
Wherein, the first metal layer, metal squares array and split ring resonator can use the metals such as Au, Al
Material, metal squares array and split ring resonator can be formed the most in the lump, have identical thickness,
In a specific embodiment, the first metal layer, metal squares array and split ring resonator are Au, first
Dielectric layer can be the dielectric material such as silicon nitride, silicon nitride, in a specific embodiment, first medium
Layer is SiNx。
With reference to shown in Fig. 1 and Fig. 2, in the relative two sides of metal squares array, it is respectively provided with outstanding
Arm beam 106, this cantilever beam 106 is to be in turn connected to form by vertical portion 1061 and transverse part 1062 head and the tail
Many material deformations beam, many material deformations beam refer to this cantilever beam at least one section have employed different from other sections
The material of the coefficient of expansion, is the most at least formed by two kinds of different materials so that send out during by thermal change
Raw deformation, cantilever beam generally uses dielectric material, it is also possible to for the lamination of dielectric material Yu other materials.
In certain embodiments, this cantilever beam can be the structure of monolayer, at least one section of cantilever beam
Using the material different from other section, thus constitute many material deformations beam, such as, the portion of indulging uses one
Kind of material is formed, and as silicon nitride, the vertical portion being adjacent uses another kind of material to be formed, as oxygen
SiClx.In further embodiments, this cantilever beam can be laminated construction, at least the one of cantilever beam
The different material with other sections of a kind of material of section, such as one portion's of indulging employing silicon nitride is folded with Au's
Layer, the vertical portion being adjacent uses the lamination of silicon nitride and silicon oxide.In an embodiment of the present invention,
Cantilever beam is the mixed structure of monolayer and multilamellar, in the part of multilamellar at least one layer with the portion of monolayer
Point using different material, the vertical portion that can be adjacent includes different materials, transverse part employing wherein
The material in individual vertical portion, in a specific embodiment, a vertical portion is formed by the first material, with it
Adjacent vertical portion is formed by the lamination of the first material and the second material thereon, and the first material is the most permissible
For silicon nitride, the second material can be such as Au, and transverse part uses the first material to be formed, concrete at this
In embodiment, as depicted in figs. 1 and 2, this cantilever beam 106 is two inflection structure compositions connected
Cantilever beam, inflection structure includes two vertical portions and connects the transverse part composition in adjacent vertical portion.Multiple
The cantilever beam of bending composition can effectively amplify deformation quantity, improves the capturing ability of signal.
One end of this cantilever beam is fixing with framework 100 to be connected, and the other end is fixing with absorbing structure to be connected, outstanding
Absorbing structure is fixed on framework 100 by arm beam, framework 100 usually dielectric material, the most permissible
For silicon nitride, silicon nitride etc., absorbing structure transfers heat to cantilever beam after absorbing radiation, in the present embodiment,
Be provided with second dielectric layer 112 in the lower section of the first metal layer 110, the other end of cantilever beam 106 is by being somebody's turn to do
Second dielectric layer 112 is fixing with absorbing structure to be connected, and this second dielectric layer 112 can be and the first metal
Layer has the block structure of same size, does not i.e. have hollow out or the pattern of non-hollow out in second dielectric layer, this
Sample can increase the contact surface with the first metal layer, preferably transmits heat to cantilever beam.Certainly, exist
In other embodiments, in order to alleviate the purposes such as quality, it is also possible to arrange pattern in second dielectric layer,
Can also fixing with absorbing structure by other means be connected.
The Terahertz focal plane arrays (FPA) that the present embodiment provides, absorbing structure defines the resonator cavity of Meta Materials,
And at metal squares array outer shroud around arranging split ring resonator, the terahertz emission that energy is low is had by this device
Stronger absorbability and there is wider adsorption frequency, after absorbing terahertz emission, absorbing structure temperature
Raising and pass to the deformation beam of many materials, the different materials of the deformation beam of many materials has different expansion systems
Number, when there being heat to transmit, it may occur that thermal deformation, under this thermal deformation drives, absorbing structure generation angle
Deflection so that the visible ray of metal squares array reflection changes, by detecting this visible ray, it is achieved too
The detection of hertz signal and recycling.
The visible ray reflected for above-mentioned array, by building 4f optical detection apparatus, thus can realize
The detection of terahertz signal and imaging.
The above, be only presently preferred embodiments of the present invention, not the present invention is made any in form
Restriction.
Although the present invention discloses as above with preferred embodiment, but is not limited to the present invention.Any
Those of ordinary skill in the art, without departing under technical solution of the present invention ambit, may utilize
Technical solution of the present invention is made many possible variations and modification by method and the technology contents of stating announcement, or
It is revised as the Equivalent embodiments of equivalent variations.Therefore, every content without departing from technical solution of the present invention,
And repair any simple modification made for any of the above embodiments, equivalent variations according to the technical spirit of the present invention
Decorations, all still fall within the range of technical solution of the present invention protection.
Claims (10)
1. a Terahertz focal plane arrays (FPA), it is characterised in that include framework, cantilever beam and absorption knot
Structure;Wherein,
Absorbing structure, including the first metal layer stacked gradually, first medium layer and metal squares array;
Cantilever beam, two cantilever beams lay respectively at the opposite side of metal squares array, and each cantilever beam is
The many material deformations beam being in turn connected to form by vertical portion and transverse part head and the tail, its one end is fixing with framework to be connected,
The other end is fixing with absorbing structure to be connected.
Terahertz focal plane arrays (FPA) the most according to claim 1, it is characterised in that absorbing structure
Also including split ring resonator, split ring resonator is positioned on first medium layer and around metal squares array.
Terahertz focal plane arrays (FPA) the most according to claim 2, it is characterised in that opening resonance
The opening of ring is arranged along the formed symmetrical of metal squares array.
Terahertz focal plane arrays (FPA) the most according to claim 1, it is characterised in that also include
Second medium layer, second dielectric layer is positioned under the first metal layer, the other end of cantilever beam and second dielectric layer
Fixing connection.
Terahertz focal plane arrays (FPA) the most according to claim 4, it is characterised in that described second
Dielectric layer is to have the block structure of same size with the first metal layer.
6. according to the Terahertz focal plane arrays (FPA) according to any one of claim 1-5, it is characterised in that
Cantilever beam is laminated construction, and at least one section of material a kind of at cantilever beam is different from other sections
Material.
Terahertz focal plane arrays (FPA) the most according to claim 6, it is characterised in that adjacent is vertical
Portion includes different materials, and transverse part uses the material in one of them vertical portion.
Terahertz focal plane arrays (FPA) the most according to claim 7, it is characterised in that a vertical portion
Being formed by the first material, the vertical portion being adjacent is by the first material and the lamination shape of the second material thereon
Become.
9. according to the Terahertz focal plane arrays (FPA) according to any one of claim 1-5, it is characterised in that
Described cantilever beam is the structure of monolayer, at the material that at least one section of employing of cantilever beam is different from other section.
10. a Terahertz detection and imaging device, it is characterised in that to appoint in claim 1-9
The visible ray of one described Terahertz focal plane arrays (FPA) reflection is as input.
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CN106645016A (en) * | 2016-11-23 | 2017-05-10 | 电子科技大学 | Transmission type terahertz microfluidic channel sensor based on L-shaped structured metamaterial |
CN107478336A (en) * | 2017-09-01 | 2017-12-15 | 中国科学院电子学研究所 | Terahertz imaging array chip and preparation method thereof, imaging system |
CN108493567A (en) * | 2018-02-13 | 2018-09-04 | 浙江大学 | Adjustable Terahertz resonant cavity based on superstructure and its method for species analysis |
CN112140092A (en) * | 2020-09-29 | 2020-12-29 | 西安交通大学 | Terahertz wave induction-based micro robot |
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CN108493567A (en) * | 2018-02-13 | 2018-09-04 | 浙江大学 | Adjustable Terahertz resonant cavity based on superstructure and its method for species analysis |
CN108493567B (en) * | 2018-02-13 | 2020-03-20 | 浙江大学 | Adjustable terahertz resonant cavity based on superstructure and method for analyzing substances by using same |
CN112140092A (en) * | 2020-09-29 | 2020-12-29 | 西安交通大学 | Terahertz wave induction-based micro robot |
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