CN103983364B - Metamaterial pixel structure and focal plane array imaging detector using same - Google Patents
Metamaterial pixel structure and focal plane array imaging detector using same Download PDFInfo
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- CN103983364B CN103983364B CN201410228063.2A CN201410228063A CN103983364B CN 103983364 B CN103983364 B CN 103983364B CN 201410228063 A CN201410228063 A CN 201410228063A CN 103983364 B CN103983364 B CN 103983364B
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Abstract
The invention relates to a metamaterial pixel structure used for terahertz and millimeter wave detection and a focal plane array imaging detector using the metamaterial pixel structure. The metamaterial pixel structure comprises a top layer and a bottom layer. A resonator is formed on the top player and comprises at least one split ring set which is longitudinally arranged, each split ring is provided with a hollowed-out region which is exposed out of the bottom layer and is of a special shape, and therefore the top layer of the metamaterial pixel structure serves both as a micro reflecting mirror and the resonator to form the metamaterial pixel structure. Meanwhile, a double-material cantilever beam actuator is made of a top layer material and a bottom layer material. The focal plane array imaging detector comprises a focal plane array formed by periodically arranging a plurality of metamaterial pixel structures, the metamaterial pixel structures are arranged to form a metamaterial periodical structure, so that high-resolution imaging and high absorptivity of terahertz or millimeter waves are realized, and detection sensitivity is high.
Description
Technical field
The invention belongs to Terahertz (THz-Terahertz) and millimeter wave detection and technical field of imaging, it is related to a kind of super
Material pixel structure, more particularly to a kind of Meta Materials pixel structure for Terahertz and millimeter wave detection and using this surpass
The focal plane array image-forming detector of material pixel structure, is mainly used in non-refrigeration type Terahertz or millimeter wave realtime imaging
In system.
Background technology
Terahertz and millimeter wave detection and imaging technique are in national defence, safety check, lossless detection, biologic medical, commercial production, base
The fields such as plinth scientific research have a wide range of applications.At present, Meta Materials absorbing structure is applied to terahertz by correlational study both at home and abroad
Hereby wave band, solves the problems, such as that terahertz imaging detector absorbance is low.For example：2010, Boston University Hu Tao et al. profit
The ray machine sensor array for microwave and terahertz wave band with Meta Materials Design Theory, Meta Materials resonant ring is added double materials
Material cantilever beam element；2013, USN graduate Fabio Alves et al. adopted SiOx and Al as bi-material layers cantilever
The bi-material of beam, designs and has made the beam type terahertz detector based on Meta Materials；Application No.
It is directed to employ in a kind of 201210250324 Chinese patent application " Terahertz focal plane arrays (FPA) based on MEMS technology "
Meta Materials absorbing structure is as Terahertz absorbing structure layer.
But the metamaterial structure currently used for terahertz detection and the bi-material layers beam type terahertz imaging spy using it
Survey device and be primarily present following shortcoming：1. each metamaterial structure is resonator it is impossible to execute as micro-reflector and cantilever beam
Device；2. micro-reflector area is less, is unfavorable for optical read-out；3. the single pixel of detector is by multiple metamaterial modular construction groups
Become, need extra addition micro-reflector and cantilever beam executor；4. between pixel and pixel, gap is big, and resolution is low；5. manufacture
Complex process, relatively costly.
Content of the invention
In view of the foregoing it is proposed that the present invention is to provide a kind of Meta Materials picture overcoming disadvantages mentioned above at least in part
Meta structure and the focal plane array image-forming detector using this Meta Materials pixel structure.
According to the first aspect of the invention, there is provided a kind of Meta Materials pixel structure, described Meta Materials pixel structure comprises
Top layer and bottom, described top layer forms resonator, and described resonator includes longitudinally disposed least one set splitting ring, each of which
Group splitting ring comprises a splitting ring, and each splitting ring includes exposing bottomShape void region, and onlyShape hollow out
One end hollow out extending laterally outward in region goes out top layer.
According to the second aspect of the invention, there is provided a kind of Meta Materials pixel structure, described Meta Materials pixel structure comprises
Top layer and bottom, described top layer forms resonator, and described resonator includes longitudinally disposed least one set splitting ring, each of which
Group splitting ring comprises two laterally symmetrical back-to-back splitting rings, and each splitting ring includes exposing bottomShape void region,
And onlyOne end hollow out extending laterally outward of shape void region goes out top layer, two divisions in each group of splitting ring
RingThe vertical section of shape void region is near to form back-to-back symmetrical structure.
The Meta Materials pixel structure that first or second aspect according to the present invention provides, wherein, it is preferred that described resonator
It is made up of two groups of longitudinally disposed splitting rings；The size being preferably located at one group of splitting ring of top is more than underlying one
The size of group splitting ring.
According to the third aspect of the invention we, there is provided a kind of Meta Materials pixel structure, described Meta Materials pixel structure comprises
Top layer and bottom, described top layer forms resonator, and described resonator includes a single splitting ring, and this splitting ring includes E word
One end hollow out that the intermediate lateral part of shape void region, only E font void region stretches out goes out top layer, and E font
The intermediate lateral part of void region exposes bottom, and other parts are together with bottom hollow out.
The Meta Materials pixel structure being provided according to any one in above-mentioned the first to the third aspect of the present invention, its
In, it is preferred that the size of the described resonator being formed is 10 microns～120 microns；
It is preferred that the size of the described resonator being formed is 121 microns～1000 microns；
It is preferred that described top layer constitutes to form metal resonators by metal material, described bottom is by dielectric substance structure
Become；
Preferably, described metal material is gold or aluminum, and described dielectric substance is silicon nitride or silicon dioxide.
Wherein, the top layer of metal material, both as micro-reflector, constitutes metamaterial structure, simultaneously by quilting material and bottom again
Layer material constitutes bi-material layers cantilever beam executor.
According to the fourth aspect of the invention, there is provided a kind of focal plane array image-forming detector, this imaging detector comprises
Press periodic arrangement group by multiple as any one the Meta Materials pixel structure providing in terms of the present invention first, second or third
The focal plane arrays (FPA) becoming, wherein, multiple described Meta Materials pixel arrangement form Meta Materials periodic structures, the horizontal cycle is one and surpasses
The length of material pixel, longitudinal cycle is the width of a Meta Materials pixel.
Compared with prior art, the Meta Materials pixel structure that the present invention provides is beneficial in that：1. each Meta Materials
The top layer of pixel is both used for optical read-out as micro-reflector, and is used for absorbing electromagnetism spoke as resonator composition metamaterial structure
Penetrate energy, bi-material layers cantilever beam executor is constituted by quilting material and primer simultaneously；2. micro-reflector area is big, beneficial to light
Learn and read imaging.
The focal plane array image-forming detector that the present invention provides is beneficial in that：1. each pixel of such detector
It is made up of single Meta Materials pixel, between pixel and pixel, gap is little, high resolution；2. it is capable of to THz wave or milli
The high-absorbility of metric wave；3. pixel is sub-wavelength size, breaches the Terahertz or millimetre wavelength limit to object resolution
System；4. such detector thickness is nanometer scale, has high detection sensitivity, is capable of high frame frequency Terahertz or millimeter wave
Imaging.
Described above is only the general introduction of technical solution of the present invention, in order to better understand the technological means of the present invention,
And can be practiced according to the content of description, and in order to allow the above and other objects of the present invention, feature and advantage can
Become apparent, below especially exemplified by the specific embodiment of the present invention.
Brief description
Fig. 1 is the schematic diagram of the Meta Materials single band pixel structure of embodiment 1 description.
Fig. 2 is the schematic diagram of the resonator in the Meta Materials single band pixel structure of embodiment 1 description.
Fig. 3 is the schematic diagram of the focal plane arrays (FPA) being made up of multiple Meta Materials single band pixels of embodiment 1 description.
Fig. 4 is the schematic diagram of the Meta Materials two waveband pixel structure of embodiment 2 description.
Fig. 5 is the schematic diagram of the resonator in the Meta Materials two waveband pixel structure of embodiment 2 description.
Fig. 6 is the schematic diagram of the focal plane arrays (FPA) being made up of multiple Meta Materials two waveband pixels of embodiment 2 description.
Fig. 7 is the schematic diagram of the symmetric form Meta Materials single band pixel structure of embodiment 3 description.
Fig. 8 is the schematic diagram of the resonator of symmetric form Meta Materials single band pixel structure of embodiment 3 description.
Fig. 9 is the signal of the focal plane arrays (FPA) being made up of multiple symmetric form Meta Materials single band pixels of embodiment 3 description
Figure.
Figure 10 is the schematic diagram of the symmetric form Meta Materials two waveband pixel structure of embodiment 4 description.
Figure 11 is the schematic diagram of the resonator of symmetric form Meta Materials two waveband pixel structure of embodiment 4 description.
Figure 12 is the signal of the focal plane arrays (FPA) being made up of multiple symmetric form Meta Materials two waveband pixels of embodiment 4 description
Figure.
Figure 13 is the schematic diagram of the Meta Materials pixel structure of embodiment 5 description.
Figure 14 is the schematic diagram of the resonator in the Meta Materials pixel structure of embodiment 5 description.
Figure 15 is the schematic diagram of the focal plane arrays (FPA) being made up of multiple Meta Materials pixels of embodiment 5 description.
Specific embodiment
In order that technological means, creation characteristic, reached purpose and work(that those of ordinary skill in the art realize to the present invention
Effect is easy to understand, and below in conjunction with the accompanying drawings, the present invention is expanded on further.
Embodiment 1：
A kind of Meta Materials single band pixel structure that Fig. 1 provides for the embodiment of the present invention 1, this Meta Materials single band pixel is tied
Structure differs larger metal material by two kinds of thermal coefficient of expansions and dielectric substance is constituted, and metal material can be using gold or aluminum, electricity
Dielectric material can adopt silicon nitride or silicon dioxide；This Meta Materials single band pixel structure comprises top layer 1 and bottom 2, and top layer 1 is
Metal material, bottom 2 is dielectric substance, and metal material top layer 1 forms resonator, and Fig. 2 is that this Meta Materials single band pixel is tied
The schematic diagram of the resonator in structure, described resonator includes one group of splitting ring, and this group splitting ring comprises a splitting ring 3, division
Ring 3 includes exposing bottomShape void region, and onlyOne end hollow out extending laterally outward of shape void region goes out
Top layer；Wherein, top layer 1 is both used for optical read-out as micro-reflector, and is used for as metal resonators composition metamaterial structure
Absorption of electromagnetic radiation energy, constitutes bi-material layers cantilever beam executor by top layer 1 metal material and bottom 2 dielectric substance simultaneously.
Metal resonators form Meta Materials absorber by periodic arrangement, produce strong resonance to incident electromagnetic wave, realize to specific list
The high-absorbility of wave band electromagnetic radiation.Wherein, the size of the described resonator of formation can be 10 microns～120 microns, to be formed
Absorb the Meta Materials absorbing structure of terahertz electromagnetic radiation；The size of the described resonator being formed is alternatively 121 microns～1000
Micron, to form the Meta Materials absorbing structure absorbing millimeter wave electromagnetic radiation.
Fig. 3 is the focal plane arrays (FPA) being made up of by periodic arrangement this Meta Materials single band pixel multiple, thus obtaining super material
Material focal plane arrays (FPA) single band imaging detector, this imaging detector comprises this focal plane arrays (FPA), wherein, multiple Meta Materials unicasts
Section pixel arrangement form Meta Materials periodic structure, the horizontal cycle is the length of a Meta Materials single band pixel, and longitudinal cycle is
The width of one Meta Materials single band pixel, the silicon nitride material that connects through between each Meta Materials single band pixel is realized.
This Meta Materials focal plane arrays (FPA) single band imaging detector bi-material layers cantilever after absorption of electromagnetic radiation, in Meta Materials pixel
Beam temperature raises, and the bi-material thermal coefficient of expansion difference of composition cantilever beam is larger therefore to deflect, the size pair of amount of deflection
Should be in the size of electromagnetic radiation energy；For two-dimensional focal plane array, the distribution of each pixel reflecting surface deflection angle just embodies
The energy field distribution of target emanation, reads energy field distribution using optical meanss high-speed parallel, thus realizing real-time surface battle array
Picture.
Embodiment 2：
A kind of Meta Materials two waveband pixel structure that Fig. 4 provides for the embodiment of the present invention 2, this Meta Materials two waveband pixel is tied
Structure differs larger metal material by two kinds of thermal coefficient of expansions and dielectric substance is constituted, and metal material can be using gold or aluminum, electricity
Dielectric material can adopt silicon nitride or silicon dioxide；This Meta Materials two waveband pixel structure comprises top layer 4 and bottom 5, and top layer 4 is
Metal material, bottom 5 is dielectric substance, and metal material top layer 4 forms resonator, and Fig. 5 is that this Meta Materials two waveband pixel is tied
The schematic diagram of the resonator in structure, described resonator includes longitudinally disposed two group splitting ring, and one group of division above
The size of ring 6 is more than the size of underlying one group of splitting ring 7, and each group of splitting ring comprises a splitting ring, each division
Ring includes exposing bottomShape void region, and onlyOne end hollow out extending laterally outward of shape void region goes out
Top layer,；Wherein, top layer 4 is both used for optical read-out as micro-reflector, and is used for as metal resonators composition metamaterial structure
Absorption of electromagnetic radiation energy, constitutes bi-material layers cantilever beam executor by top layer 4 metal material and bottom 5 dielectric substance simultaneously.
Metal resonators form Meta Materials absorber by periodic arrangement, produce strong resonance to incident electromagnetic wave, realize to specific double
The high-absorbility of wave band electromagnetic radiation.Wherein, the size of the described resonator of formation can be 10 microns～120 microns, to be formed
Absorb the Meta Materials absorbing structure of terahertz electromagnetic radiation；The size of the described resonator being formed is alternatively 121 microns～1000
Micron, to form the Meta Materials absorbing structure absorbing millimeter wave electromagnetic radiation.
Fig. 6 is the focal plane arrays (FPA) being made up of by periodic arrangement this Meta Materials two waveband pixel multiple, thus obtaining super material
Material focal plane arrays (FPA) dual-waveband imaging detector, this imaging detector comprises this focal plane arrays (FPA), wherein, multiple Meta Materials double waves
Section pixel arrangement form Meta Materials periodic structure, the horizontal cycle is the length of a Meta Materials two waveband pixel, and longitudinal cycle is
The width of one Meta Materials two waveband pixel, the silicon nitride material that connects through between each Meta Materials two waveband pixel is realized.
This Meta Materials focal plane arrays (FPA) dual-waveband imaging detector bi-material layers cantilever after absorption of electromagnetic radiation, in Meta Materials pixel
Beam temperature raises, and the bi-material thermal coefficient of expansion difference of composition cantilever beam is larger therefore to deflect, the size pair of amount of deflection
Should be in the size of electromagnetic radiation energy；For two-dimensional focal plane array, the distribution of each pixel reflecting surface deflection angle just embodies
The energy field distribution of target emanation, reads energy field distribution using optical meanss high-speed parallel, thus realizing real-time surface battle array
Picture.
Embodiment 3：
A kind of symmetric form Meta Materials single band pixel structure that Fig. 7 provides for the embodiment of the present invention 3, this symmetric form Meta Materials
Single band pixel structure differs larger metal material by two kinds of thermal coefficient of expansions and dielectric substance is constituted, and metal material can be adopted
With gold or aluminum, dielectric substance can adopt silicon nitride or silicon dioxide；This symmetric form Meta Materials single band pixel structure comprises to push up
Layer 8 and bottom 9, top layer 8 is metal material, and bottom 9 is dielectric substance, and metal material top layer 8 forms resonator, and Fig. 8 is should
The schematic diagram of the resonator in symmetric form Meta Materials single band pixel structure, described resonator includes one group of splitting ring, this component
Driffractive ring comprises laterally symmetrical back-to-back two splitting rings 10,11, and each splitting ring 10,11 includes exposing bottomShape hollow out
Region, and onlyOne end hollow out extending laterally outward of shape void region goes out top layer, two points in this group splitting ring
Driffractive ring 10,11The vertical section of shape void region is near to form back-to-back symmetrical structure；Wherein, top layer 8 is both as micro- anti-
Penetrate mirror for optical read-out, and constitute metamaterial structure as metal resonators and be used for absorption of electromagnetic radiation energy, simultaneously by pushing up
Layer 8 metal material and bottom 9 dielectric substance constitute bi-material layers cantilever beam executor.Metal resonators are formed by periodic arrangement
Meta Materials absorber, produces strong resonance to incident electromagnetic wave, realizes the high-absorbility to specific single band electromagnetic radiation.Its
In, the size of the described resonator of formation can be 10 microns～120 microns, to form the Meta Materials absorbing terahertz electromagnetic radiation
Absorbing structure；The size of the described resonator being formed is alternatively 121 microns～1000 microns, absorbs millimeter wave electromagnetism spoke to be formed
The Meta Materials absorbing structure penetrated.
Fig. 9 is the focal plane arrays (FPA) being made up of by periodic arrangement this symmetric form Meta Materials single band pixel multiple, thus
To symmetric form Meta Materials focal plane arrays (FPA) single band imaging detector, this imaging detector comprises this focal plane arrays (FPA), wherein, many
Individual symmetric form Meta Materials single band pixel arrangement form Meta Materials periodic structure, the horizontal cycle is a symmetric form Meta Materials unicast
The length of section pixel, longitudinal cycle is the width of a symmetric form Meta Materials single band pixel, each symmetric form Meta Materials unicast
The silicon nitride material that connects through between section pixel is realized.This symmetric form Meta Materials focal plane arrays (FPA) single band imaging detector exists
After absorption of electromagnetic radiation, the bi-material layers cantilever beam temperature in Meta Materials pixel raises, and the bi-material heat constituting cantilever beam is swollen
Swollen coefficient difference is larger therefore to deflect, and the size of amount of deflection corresponds to the size of electromagnetic radiation energy；Burnt flat for two dimension
Face array, the distribution of each pixel reflecting surface deflection angle just embodies the energy field distribution of target emanation, using optical meanss
High-speed parallel reads energy field distribution, thus realizing the imaging of real-time surface battle array.
Embodiment 4：
A kind of symmetric form Meta Materials two waveband pixel structure that Figure 10 provides for the embodiment of the present invention 4, the super material of this symmetric form
Material two waveband pixel structure differs larger metal material by two kinds of thermal coefficient of expansions and dielectric substance is constituted, and metal material can
Using gold or aluminum, dielectric substance can adopt silicon nitride or silicon dioxide；This symmetric form Meta Materials two waveband pixel structure comprises
Top layer 12 and bottom 13, top layer 12 is metal material, and bottom 13 is dielectric substance, and metal material top layer 12 forms resonator,
Figure 11 is the schematic diagram of the resonator in this symmetric form Meta Materials two waveband pixel structure, and described resonator includes longitudinally disposed
Two groups of splitting rings, and the size of one group of splitting ring 14 and 15 above is more than underlying one group of splitting ring 16 and 17
Size, each of which group splitting ring comprises two laterally symmetrical back-to-back splitting rings, and each splitting ring includes exposing bottomShape void region, and onlyOne end hollow out extending laterally outward of shape void region goes out top layer, each group of splitting ring
In two splitting ringsThe vertical section of shape void region is near to form back-to-back symmetrical structure；Wherein, top layer 12 was both made
It is used for optical read-out for micro-reflector, and constitutes metamaterial structure as metal resonators being used for absorption of electromagnetic radiation energy, with
When bi-material layers cantilever beam executor is constituted by top layer 12 metal material and bottom 13 dielectric substance.Metal resonators pass through the cycle
Arrangement form Meta Materials absorber, produces strong resonance to incident electromagnetic wave, realizes the height suction to specific two waveband electromagnetic radiation
Yield.Wherein, the size of the described resonator of formation can be 10 microns～120 microns, to form absorption terahertz electromagnetic radiation
Meta Materials absorbing structure；The size of the described resonator being formed is alternatively 121 microns～1000 microns, to form absorption millimeter
The Meta Materials absorbing structure of ripple electromagnetic radiation.
Figure 12 is the focal plane arrays (FPA) being made up of by periodic arrangement this symmetric form Meta Materials two waveband pixel multiple, thus
To symmetric form Meta Materials focal plane arrays (FPA) dual-waveband imaging detector, this imaging detector comprises this focal plane arrays (FPA), wherein, many
Individual symmetric form Meta Materials two waveband pixel arrangement form Meta Materials periodic structure, the horizontal cycle is a symmetric form Meta Materials double wave
The length of section pixel, longitudinal cycle is the width of a symmetric form Meta Materials two waveband pixel, each symmetric form Meta Materials double wave
The silicon nitride material that connects through between section pixel is realized.This symmetric form Meta Materials focal plane arrays (FPA) dual-waveband imaging detector exists
After absorption of electromagnetic radiation, the bi-material layers cantilever beam temperature in Meta Materials pixel raises, and the bi-material heat constituting cantilever beam is swollen
Swollen coefficient difference is larger therefore to deflect, and the size of amount of deflection corresponds to the size of electromagnetic radiation energy；Burnt flat for two dimension
Face array, the distribution of each pixel reflecting surface deflection angle just embodies the energy field distribution of target emanation, using optical meanss
High-speed parallel reads energy field distribution, thus realizing the imaging of real-time surface battle array.
In addition to each Meta Materials single band pixel structure that above-described embodiment provides and each Meta Materials two waveband pixel structure,
Resonator in Meta Materials pixel structure also can be made up of multigroup splitting ring, thus obtaining Meta Materials multiband pixel structure, real
The now absorption to specific multiband electromagnetic radiation, here is omitted.
Embodiment 5：
A kind of Meta Materials pixel structure that Figure 13 provides for the embodiment of the present invention 5, this Meta Materials pixel structure is by two kinds of heat
The larger metal material of coefficient of expansion difference and dielectric substance are constituted, and metal material can be using gold or aluminum, and dielectric substance can
Using silicon nitride or silicon dioxide；This Meta Materials pixel structure comprises top layer 18 and bottom 19, and top layer 18 is metal material, bottom
19 is dielectric substance, and metal material top layer 18 forms resonator, and Figure 14 is showing of the resonator in this Meta Materials pixel structure
It is intended to, described resonator includes a single splitting ring 20, and this splitting ring 20 includes E font void region, and only E font is engraved
One end hollow out that the intermediate lateral part of dummy section stretches out goes out top layer, and the intermediate lateral part of E font void region
Expose bottom, other parts are together with bottom hollow out；Wherein, top layer 18 is both used for optical read-out as micro-reflector, makees again
Constitute metamaterial structure for metal resonators and be used for absorption of electromagnetic radiation energy, simultaneously by top layer 18 metal material and bottom 19 electricity
Dielectric material constitutes bi-material layers cantilever beam executor.Metal resonators form Meta Materials absorber by periodic arrangement, to incidence
Electromagnetic wave produce strong resonance, realize high-absorbility to specific band electromagnetic radiation.Wherein, the chi of the described resonator of formation
Very little be 10 microns～120 microns, with formed absorb terahertz electromagnetic radiation Meta Materials absorbing structure；The described resonance being formed
The size of device is alternatively 121 microns～1000 microns, to form the Meta Materials absorbing structure absorbing millimeter wave electromagnetic radiation.
Figure 15 is the focal plane arrays (FPA) being made up of by periodic arrangement this Meta Materials pixel multiple, thus it is burnt flat to obtain Meta Materials
Face array imaging detectors, this imaging detector comprises this focal plane arrays (FPA), wherein, the super material of multiple Meta Materials pixel arrangement form
Material periodic structure, the horizontal cycle is the length of a Meta Materials pixel, and longitudinal cycle is the width of a Meta Materials pixel, each
The silicon nitride material that connects through between Meta Materials pixel is realized.This Meta Materials focal plane array image-forming detector is absorbing electromagnetism
After radiation, the bi-material layers cantilever beam temperature in Meta Materials pixel raises, and constitutes the bi-material thermal coefficient of expansion phase of cantilever beam
Difference is larger therefore to deflect, and the size of amount of deflection corresponds to the size of electromagnetic radiation energy；For two-dimensional focal plane array, respectively
The distribution of individual pixel reflecting surface deflection angle just embodies the energy field distribution of target emanation, is read using optical meanss high-speed parallel
Go out energy field distribution, thus realizing the imaging of real-time surface battle array.
The foregoing describe ultimate principle and principal character and the advantage of the present invention.Those of ordinary skill in the art should
Solution, the present invention is not restricted to the described embodiments, merely illustrating the principles of the invention described in above-described embodiment and description,
Without departing from the spirit and scope of the present invention, the present invention also has various changes and modifications, and these changes and improvements are all
Fall in scope of the claimed invention.Claimed scope is by appending claims and its equivalent circle.
Fixed.
Claims (10)
1. a kind of Meta Materials pixel structure, comprises top layer and bottom it is characterised in that described top layer forms resonator, described humorous
The device that shakes includes longitudinally disposed least one set splitting ring, and each of which group splitting ring comprises a splitting ring, each splitting ring bag
Include and expose bottomShape void region, and onlyOne end hollow out extending laterally outward of shape void region goes out top layer.
2. a kind of Meta Materials pixel structure, comprises top layer and bottom it is characterised in that described top layer forms resonator, described humorous
The device that shakes includes longitudinally disposed least one set splitting ring, and each of which group splitting ring comprises two laterally symmetrical back-to-back divisions
Ring, each splitting ring includes exposing bottomShape void region, and onlyThe extending laterally outward of shape void region
One end hollow out goes out top layer, two splitting rings in each group of splitting ringThe vertical section of shape void region leans against near to be formed
Back of the body symmetrical structure.
3. Meta Materials pixel structure as claimed in claim 1 or 2, described resonator is by two groups of longitudinally disposed splitting ring groups
Become.
4. Meta Materials pixel structure as claimed in claim 3, wherein, the size of one group of splitting ring above is more than and is located at
The size of one group of splitting ring of lower section.
5. a kind of Meta Materials pixel structure, comprises top layer and bottom it is characterised in that described top layer forms resonator, described humorous
The device that shakes includes a single splitting ring, and this splitting ring includes E font void region, and only E font void region is middle horizontal
Go out top layer to one end hollow out that part stretches out, and the intermediate lateral part of E font void region exposes bottom, this E word
The vertical section of the upside lateral part, downside lateral part and left side of shape void region is all together with bottom hollow out.
6. as any one of Meta Materials pixel structure of claim 1 or 2 or 5, wherein, the chi of the described resonator of formation
Very little is 10 microns～120 microns.
7. as any one of Meta Materials pixel structure of claim 1 or 2 or 5, wherein, the chi of the described resonator of formation
Very little is 121 microns～1000 microns.
8. as any one of Meta Materials pixel structure of claim 1 or 2 or 5, described top layer be made up of metal material with
Form metal resonators, described bottom is made up of dielectric substance.
9. Meta Materials pixel structure as claimed in claim 8, described metal material is gold or aluminum, and described dielectric substance is nitrogen
SiClx or silicon dioxide.
10. a kind of focal plane array image-forming detector, this imaging detector comprises by multiple as any one in claim 1 or 2 or 5
Individual described Meta Materials pixel structure presses the focal plane arrays (FPA) of periodic arrangement composition it is characterised in that multiple described Meta Materials picture
Identical permutation forms Meta Materials periodic structure, and the horizontal cycle is the length of a Meta Materials pixel, and longitudinal cycle is Meta Materials
The width of pixel.
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