CN107478336A - Terahertz imaging array chip and preparation method thereof, imaging system - Google Patents
Terahertz imaging array chip and preparation method thereof, imaging system Download PDFInfo
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- CN107478336A CN107478336A CN201710783618.3A CN201710783618A CN107478336A CN 107478336 A CN107478336 A CN 107478336A CN 201710783618 A CN201710783618 A CN 201710783618A CN 107478336 A CN107478336 A CN 107478336A
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
Abstract
The invention discloses a kind of terahertz imaging array chip and preparation method thereof, imaging system.Wherein, terahertz imaging array chip, equidistantly arranged according to pixel by terahertz imaging unit, the terahertz imaging unit includes：Substrate；, above substrate, distance between substrate be present in Terahertz absorbent layer structure plate；Hanging actuating arm, positioned at the both sides of Terahertz absorbent layer structure plate, wherein one end is fixed, and one end is hanging, and hanging side is fixed with Terahertz absorbent layer structure plate, includes the material of two layers of different coefficient of expansion；And fixed structure, connect the fixing end of substrate and hanging actuating arm.The terahertz imaging array chip has automatic temperature compensation function；And laser and CCD optical signalling acquisition system direct imagings are used, eliminate integrated with output circuit, simple in construction, cost is relatively low.
Description
Technical field
The disclosure belongs to terahertz imaging construction applications, be related to a kind of terahertz imaging array chip and preparation method thereof,
Imaging system.
Background technology
In electromagnetic wave frequency range, the frequency range of Terahertz (Terahertz, THz) radiation is 100GHz to 10THz, is situated between
Between microwave and far infrared.This section of frequency range is called Terahertz blank gap before, be because microwave and radio frequency source frequency without
Method extends to Terahertz section, and the frequency of optical launcher can not be reduced to this section.But in the more than ten years in past, too
The application of hertz is taken seriously, and has many scholars to enter this field, makes the development process of THz source and detector big greatly
It hurry up, this Terahertz blank gap reduces rapidly.The application field of Terahertz is extensive, can apply to the change of ppm ranks
Learn constituent analysis, the internal information for obtaining material, proximity detection, safety detection, Non-Destructive Testing, imaging technique etc..
For terahertz imaging field, the mode of imaging have single sensing element scan mode and Terahertz sensor array (by
Single sensing unit array composition) two classes.The application of some Terahertzs, such as public place safety check, nondestructive material control,
Very high, it is necessary to using array imaging method is required to the fast imaging of terahertz imaging meter.Sensing unit can be based on light guide
Body antenna, electro optic sampling technology and several major classes of heat radiation tester.Wherein, heat radiation tester is the microcomputer based on silicon substrate
Tool process technology (Micro-Electro-Mechanical System, MEMS), change the electricity of sensing unit using heat absorption
What the principle of property was made.The manufacture craft of heat radiation tester is compatible with CMOS, it is not necessary to introduces the III- of complexity
VI races element manufacture craft.Traditional heat radiation tester uses vanadium oxide (VOx) be used as thermally sensitive layer, mainly using its compared with
High thermal resistivity, but deposited oxide vanadium needs to carry out at higher temperatures, therefore one layer of deposition is usually required on vanadium oxide upper strata
Or the sensitivity of several layers of heat-sink shell increase devices.The material of heat-sink shell generally includes Ni, NiCr, Ti, W, TiN and TiWN,
The layer film that absorbs heat can be deposited by the method for physical vapour deposition (PVD) (PVD).Heat-sink shell and thermally sensitive layer will in manufacturing process
Hanging processing is carried out to be thermally isolated.Sensing unit generally will be with reading circuit (Read Out Integrated
Circuit, ROIC) bonding processing is carried out, reading circuit uses application specific integrated circuit (Application Specific
Integrated Circuit, ASIC), each sensing element corresponds to top sensing unit.Also need to coordinate clock control electricity
Road, filtering and amplifying circuit, analog to digital conversion circuit and export.Temperature sensor and certain algorithm are additionally needed with to sensing unit
Carry out temperature-compensating.
Traditional Terahertz heat radiation tester made based on the thermo-responsive film of vanadium oxide needs and reading circuit
(ROIC) integrate and carry out signal-obtaining；And traditional Terahertz heat radiation tester in itself do not have temperature compensation structure, it is necessary to
With being integrated into together with temperature sensor in terahertz imaging system, carry out the influence of compensation temperature to device in itself.It can be seen that tradition
Heat radiation tester based on thermo-responsive principle need to coordinate with circuit system, self structure is complicated, and the biography built by it
The structure for terahertz imaging system of uniting is also sufficiently complex, and cost is higher.
The content of the invention
(1) technical problems to be solved
Present disclose provides a kind of terahertz imaging array chip and preparation method thereof, imaging system, at least partly to solve
Technical problem certainly set forth above.
(2) technical scheme
According to an aspect of this disclosure, there is provided a kind of terahertz imaging array chip, pressed by terahertz imaging unit
Photograph vegetarian refreshments equidistantly arranges, and the terahertz imaging unit includes：Substrate；Terahertz absorbent layer structure plate, on substrate
, distance between substrate be present in side；Hanging actuating arm, positioned at the both sides of Terahertz absorbent layer structure plate, wherein one end is fixed,
One end is hanging, and hanging side is fixed with Terahertz absorbent layer structure plate, includes the material of two layers of different coefficient of expansion；And
Fixed structure, connect the fixing end of substrate and hanging actuating arm.
In some embodiments of the present disclosure, hanging actuating arm is two groups, and every group of hanging actuating arm includes two L-shaped knots
Structure, it is divided into interior L-shaped structure and outer L-shaped structure, is fixed on respectively by respective fixing end on substrate；The interior L of every group of hanging structure
Shape structure and outer L-shaped structure connect between the two-arm away from fixing end for U-shaped；The two L-shaped structures include lower floor's material
Material, in that two-arm close to fixing end, upper layer of material is also included on subsurface material, and upper layer of material compares subsurface material
With higher thermal coefficient of expansion.
In some embodiments of the present disclosure, Terahertz absorbent layer structure plate includes from bottom to top：Lower protective layer, terahertz
Hereby absorbed layer, optical reflecting layer, structure sheaf and up-protective layer.
In some embodiments of the present disclosure, lower protective layer can pass through Terahertz；And/or Terahertz absorbed layer
Material includes the one or more in following material：Ti, TiN, TiW, TiWN or W；And/or optical reflecting layer is the anti-of laser
The one or more penetrated in layer, including following material：Metal, including：Ag、Al；Or metallic compound, including：AlSiCu、
AlCu；And/or the material of structure sheaf includes：Nitride, oxide or nitrogen oxides；And/or the thickness of structure sheaf is between 1 μm
Between~10 μm.
In some embodiments of the present disclosure, the size of terahertz imaging array chip is between 30 μm~300 μm.
According to another aspect of the disclosure, there is provided a kind of preparation method of terahertz imaging array chip, including：
Photoetching glue victim layer is made on a silicon substrate and carries out photoetching, forms the space as fixed structure；Knot after a photoetching
Second of photoetching is carried out on structure, the bigger shallow grooves of a width are formed in gap, one is formed in the close position of the shallow grooves
Groove structure；Terahertz absorbent layer structure plate is made in structure after photoetching；In obtained Terahertz absorbent layer structure plate
Both sides successively deposition actuating arm subsurface material, actuating arm upper layer of material, and carry out graphical treatment, make double-deck actuating arm knot
Structure；And photoetching glue victim layer is removed, the hanging structure of actuating arm and Terahertz absorbent layer structure plate is formed, completes Terahertz
The making of imaging array chip.
According to the another aspect of the disclosure, there is provided a kind of preparation method of terahertz imaging array chip, including：
Photoetching and etching are carried out to the sacrificial silicon layer on soi wafer substrate, form the space as fixed structure and a groove structure；
Terahertz absorbent layer structure plate is made in structure after etching；In the both sides of obtained Terahertz absorbent layer structure plate successively
Actuating arm subsurface material, actuating arm upper layer of material are deposited, and carries out graphical treatment, makes double-deck driving arm configuration；And go
Except sacrificial silicon layer and the substrate of Terahertz absorbent layer structure plate face part, actuating arm and Terahertz absorbent layer structure plate are formed
Hanging structure, complete terahertz imaging array chip making.
Making Terahertz absorbent layer structure plate in some embodiments of the present disclosure, in the structure after photoetching includes：
Lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf are sequentially depositing in structure after photoetching；Etch away both sides
Point lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf to photoetching glue victim layer upper surface；And etching
Up-protective layer is deposited on structure sheaf afterwards；Terahertz absorbent layer structure plate is made in structure after etching to be included：After etching
Structure on be sequentially depositing lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf；Etch away under two side portions
Protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf are to the upper surface of sacrificial silicon layer；And structure after etching
Up-protective layer is deposited on layer.
According to other one side of the disclosure, there is provided a kind of terahertz imaging system, including：What the disclosure was mentioned
Any terahertz imaging array chip；One laser, the oblique upper of terahertz imaging array chip is positioned over, to the terahertz
Hereby imaging array chip emission laser, and by the reflection of terahertz imaging array chip progress laser；One lens, it will reflect
Laser be focused；And CCD arrays, it is positioned on the imaging plane of reflection laser, receives by terahertz imaging array
Chip reflects and by the laser of lens focus.
In some embodiments of the present disclosure, Terahertz is incident from the bottom of the terahertz imaging array chip, causes too
The rotation of hertz absorbent layer structure plate；Each picture point of ccd array correspond to each picture point of terahertz imaging array chip,
By detecting the incident intensity of CCD picture points, Terahertz image is obtained.
(3) beneficial effect
It can be seen from the above technical proposal that the disclosure provide terahertz imaging array chip and preparation method thereof, into
As system, have the advantages that：
By tectonic forcing arm and the hanging structure of Terahertz absorbent layer structure plate, and use two temperature sensitivity piece thermic
Flexible principle makes actuating arm, and every group of actuating arm includes two L-shaped structures, and the L-shaped structure includes upper layer of material and lower floor's material
Material, and upper layer of material has higher thermal coefficient of expansion than subsurface material；After Terahertz incidence, the rise of absorbed layer temperature is led
The interior L-shaped structure bending of every group of actuating arm is caused, drives absorbent layer structure plate to rotate.After variation of ambient temperature, every group of driving
The internal layer and outer layer L-shaped structure of arm can produce identical angle of bend so that actuating arm distal end and Terahertz absorbent layer structure plate
Node do not produce relative displacement, effectively eliminate influence of the variation of ambient temperature to device so that the terahertz imaging array
Chip has automatic temperature compensation function；And use laser and CCD optical signalling acquisition system direct imagings, eliminate with
Output circuit integrates, and simple in construction, cost is relatively low.
Brief description of the drawings
Figure 1A is the structural representation according to embodiment of the present disclosure terahertz imaging array chip list pixel.
Figure 1B is according to embodiment of the present disclosure terahertz imaging array chip list pixel under Terahertz radiation exposure, too
Structural representation after the plate rotation of hertz absorbent layer structure.
Fig. 2 is the structure chart according to embodiment of the present disclosure terahertz imaging array chip list pixel.
Fig. 3 is the preparation method flow chart according to the embodiment terahertz imaging array chip of the disclosure one.
Fig. 4 is the mistake for making terahertz imaging array chip using silicon face processing technology according to the embodiment of the disclosure one
Journey schematic diagram；Wherein, (a) is the graphical of first time photoetching glue victim layer；(b) it is the figure of second of photoetching glue victim layer
Change；(c) it is to be sequentially depositing lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf；(d) it is to be etched to photoresist
The upper surface of sacrifice layer；(e) it is that up-protective layer is deposited on structure sheaf；Deposited in photoetching glue victim layer upper surface under actuating arm
Layer and upper layer of material, and upper layer of material is graphical；(f) it is the graphical of actuating arm subsurface material；(g) it is removal photoresist
Sacrifice layer, form the hanging structure of actuating arm and Terahertz absorbent layer structure plate.
Fig. 5 is the image of the terahertz imaging array chip made based on Surface Machining MEMS technology, wherein, (a) is light
Optical microscope image before the removal of photoresist sacrifice layer；(b) SEM image after being removed for photoetching glue victim layer.
Fig. 6 is the preparation method flow chart according to another embodiment terahertz imaging array chip of the disclosure.
Fig. 7 is to be combined to make too using silicon face processing technology and Bulk micro machining according to another embodiment of the disclosure
The process schematic of hertz imaging array chip；Wherein, (a) is to the graphical of soi wafer upper layer of silicon, makes a groove knot
Structure；(b) it is that sacrificial silicon layer is etched using reactive ion etching method and photoetching process, etches the space of fixed structure；(c) be according to
Secondary deposition lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf；(d) it is to be etched to the upper table of sacrificial silicon layer
Face；(e) it is that up-protective layer is deposited on structure sheaf；Actuating arm lower floor and upper layer of material are deposited in sacrificial silicon layer upper surface, and
Upper layer of material is graphical；(f) it is the graphical of actuating arm subsurface material；(g) it is to carry out deep silicon etching from substrate back, so
XF is used afterwards2Gas etching falls sacrificial silicon layer, forms the hanging structure of actuating arm and Terahertz absorbent layer structure plate, substrate with
The relative part of Terahertz absorbent layer structure plate carries Terahertz incidence window.
Fig. 8 is the structural representation according to embodiment of the present disclosure terahertz imaging system.
【Symbol description】
100- substrates；
11- Terahertz absorbent layer structure plates；
111- lower protective layers；112- Terahertz absorbed layers；
113- optical reflecting layers；114- structure sheafs；
115- up-protective layers；
The hanging actuating arms of 12-；
121- actuating arm subsurface materials；122- actuating arm upper layer of material；
123- groove structures；
13- fixed structures.
Embodiment
Present disclose provides a kind of terahertz imaging array chip and preparation method thereof, imaging system, pass through tectonic forcing
The hanging structure of arm and Terahertz absorbent layer structure plate, and actuating arm is made using the flexible principle of two temperature sensitivity piece thermic, often
Group actuating arm includes two L-shaped structures, the L-shaped structure including upper strata metal material and subsurface material (oxide, nitride or
Nitrogen oxides), and upper layer of material has higher thermal coefficient of expansion than subsurface material；After ambient temperature changes, every group of drive
The internal layer and outer layer L-shaped structure of swing arm can produce identical angle of bend so that actuating arm distal end and Terahertz absorbed layer knot
The node of structure plate does not produce relative displacement, effectively eliminates influence of the ambient temperature change to device so that the terahertz imaging
Array chip has automatic temperature compensation function；And directly it is built into as system using laser and CCD optical signallings acquisition system
System is imaged, and eliminates integrated with output circuit, and simple in construction, cost is relatively low.
For the purpose, technical scheme and advantage of the disclosure are more clearly understood, below in conjunction with specific embodiment, and join
According to accompanying drawing, the disclosure is further described.
In first exemplary embodiment of the disclosure, there is provided a kind of terahertz imaging array chip.
Figure 1A is the structural representation according to embodiment of the present disclosure terahertz imaging array chip list pixel；Figure 1B is root
According to embodiment of the present disclosure terahertz imaging array chip list pixel under Terahertz radiation exposure, Terahertz absorbent layer structure plate
Structural representation after rotation；Fig. 2 is the structure chart according to embodiment of the present disclosure terahertz imaging array chip list pixel.
With reference to Figure 1A-Figure 1B, the terahertz imaging array chip of the disclosure, by terahertz imaging unit according to pixel
Equidistantly arrangement, the terahertz imaging unit include：Substrate 100；Terahertz absorbent layer structure plate 11, above substrate, with
Distance between substrate be present；Hanging actuating arm 12, positioned at the both sides of Terahertz absorbent layer structure plate 11, wherein one end is fixed, and one
End is hanging, and hanging side is fixed with Terahertz absorbent layer structure plate, includes the material of two layers of different coefficient of expansion；It is and solid
Determine structure 13, connect the fixing end of substrate 100 and hanging actuating arm 12.
Each part of terahertz imaging array chip in the embodiment of the present disclosure is described in detail below.
In the present embodiment, substrate 100 is conductive silicon substrate, and its conductance scope is between the Ω of 0.1 Ω cm~100
Between cm.
The size for the terahertz imaging array chip that the disclosure proposes is between 30 μm~300 μm, pixel in the chip
Specific size depending on the wave-length coverage of the Terahertz of selection.We provide the determination method of Pixel Dimensions.Due to terahertz
Wave-length coverage hereby is 30 μm~3mm, and according to Ruili criterion, for d=1.22 λ F, (wherein, λ is the minimum spacing of two picture points
The wavelength of light, F are the aperture of imaging system).It can be learnt by the minimum spacing formula of two picture points：Select large aperture can be with
Improve the resolution ratio of object, such as F1.0.Assuming that the wavelength of selection is 0.3mm Terahertz ray, obtained according to Ruili criterion
Two picture points minimum spacing d be 370 μm.Pixel Dimensions can be smaller again in actual applications, then by optical compensation or
The optimization that the mode of person's post processing is imaged, but Pixel Dimensions can not be too small, can so cause the waste of pixel.
Shown in reference picture 2, in the present embodiment, the terahertz imaging array chip includes two groups of hanging actuating arms 12, every group
Hanging actuating arm includes two L-shaped structures, is divided into interior L-shaped structure and outer L-shaped structure, silicon is fixed on by respective fixing end
On substrate；Connected between the two-arm of interior L-shaped structure and outer L-shaped structure away from fixing end of every group of hanging structure for U-shaped；This two
Individual L-shaped structure includes subsurface material, and in that two-arm close to fixing end, upper layer of material is also included on subsurface material,
And upper layer of material has higher thermal coefficient of expansion than subsurface material.
In the present embodiment, actuating arm subsurface material 121 is silica, silicon nitride or silicon oxynitride, actuating arm upper layer of material
122 be metal material, aluminium, copper etc., but the disclosure is not limited to this, as long as the coefficient of expansion of actuating arm upper layer of material is big
In the coefficient of expansion of subsurface material.
Shown in reference picture 1A, below hanging actuating arm 11, in addition to a groove structure 123, this groove structure be for
The mechanical strength of increase actuating arm.From the point of view of Figure 1A and Fig. 2, two groups of drivings in the groove structure schematic diagram 2 in Figure 1A
The groove structure of double L-shaped structure subsurface materials in arm.
Shown in reference picture 1A, Terahertz absorbent layer structure plate 11 includes from bottom to top：Lower protective layer 111, Terahertz absorb
Layer 112, optical reflecting layer 113, structure sheaf 114 and up-protective layer 115；Wherein, lower protective layer 111 can make Terahertz saturating
Cross, the one or more that the material of Terahertz absorbed layer 112 includes but is not limited in following material：Ti, TiN, TiW, TiWN or
W etc., it can also be other materials for playing heat-absorbing action；Optical reflecting layer 113 be laser reflecting layer, using flatness compared with
Metallic film high, that there is larger reflectance factor, such as Ag, Al or metallic compound, such as AlSiCu, AlCu, structure sheaf
114 be nitride or oxide, and the thickness of structure sheaf 114 is between 1 μm~10 μm in the present embodiment；Up-protective layer 115
Material include：Silica, silicon nitride or silicon oxynitride etc..
It should be noted that Figure 1A and Figure 1B, to illustrate structure and annexation, the shape and size of various pieces are simultaneously
Non- accompanying drawing is limited, in single pixel structure figure of the terahertz imaging array chip shown in Fig. 2, the L of two groups of hanging actuating arms
Shape structure is upturned, mainly due in chip fabrication process in order to obtain the hanging structure of actuating arm, will below
Sacrifice layer removal process in, generate stress, so as to cause warpage, do not influence the structure and annexation of the disclosure.
Introduce the operation principle of the terahertz imaging array chip of the disclosure below：Shown in reference picture 1B, work as Terahertz
Radiation exposure is to object, and the Terahertz ray through reflecting or transmiting is incided on the terahertz imaging array chip, Tu1BZhong
Black arrow represent Terahertz ray be incident to Terahertz absorbed layer, in Terahertz chip, most of Terahertz ray quilt
Terahertz absorbed layer in Terahertz absorbent layer structure plate is absorbed, and then is converted into heat, and heat is reached by heat exchange pattern
The hanging actuating arm 12 of the both sides of Terahertz absorbent layer structure plate 11.Because hanging actuating arm has different heat expansion coefficient
Two kinds of material layers, usual upper strata are metallics, and lower floor is oxide, nitride or the nitrogen oxides of silicon, is raised in temperature
Afterwards, hanging arm upper layer of material has the higher coefficient of expansion than hanging arm subsurface material, therefore can have bigger extension to grow
Degree so that driving brachiocylloosis, so as to drive Terahertz absorbent layer structure plate to rotate, then by measuring the Terahertz absorbed layer
The anglec of rotation or lateral displacement of structural slab, can be with the intensity of the incident Terahertz ray of acquisition.
Shown in reference picture 2, after Terahertz irradiation, the rise of Terahertz absorbent layer structure plate temperature, temperature heat transfer is to every group
The long arm end of the interior L-shaped structure of actuating arm, in long arm end due to the double layer material with different heat expansion coefficient be present, cause
Interior L rows structural bending, the rotation of driving structure plate.And due to the presence of the hot cooling structure in the U-shaped junction of two L-shaped structures,
The temperature of outer L-shaped keeps constant, does not produce bending.
With reference to the structure of terahertz imaging array chip as shown in Figure 2, to illustrate the terahertz imaging array core
The temperature compensation function that piece has in itself.In the present embodiment, from the point of view of with reference to Fig. 2, after ambient temperature changes, each group
The internal layer and outer layer L-shaped structure of hanging actuating arm can produce identical angle of bend, so ensure that the hanging of actuating arm
End and the node of Terahertz absorbent layer structure plate do not produce relative displacement, eliminate influence of the ambient temperature change to the chip.
In second exemplary embodiment of the disclosure, there is provided a kind of making side of terahertz imaging array chip
Method.
Fig. 3 is the preparation method flow chart according to the embodiment terahertz imaging array chip of the disclosure one.According to Fig. 4
The embodiment of the disclosure one makes the process schematic of terahertz imaging array chip using silicon face processing technology；Wherein, (a)
For the graphical of first time photoetching glue victim layer；(b) it is the graphical of second photoetching glue victim layer；(c) it is to be sequentially depositing down
Protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf；(d) it is to be etched to the upper surface of photoetching glue victim layer；(e)
To deposit up-protective layer on structure sheaf；Actuating arm lower floor and upper layer of material are deposited in photoetching glue victim layer upper surface, and will
Upper layer of material is graphical；(f) it is the graphical of actuating arm subsurface material；(g) to remove photoetching glue victim layer, actuating arm is formed
With the hanging structure of Terahertz absorbent layer structure plate.
From the point of view of Fig. 3 and Fig. 4, the preparation method of the terahertz imaging array chip of the disclosure, including：
Step S302：Photoetching glue victim layer is made on substrate and carries out photoetching, forms the space as fixed structure；
In the present embodiment, substrate is double section silicon chips, its conductance scope between the Ω cm of 0.1 Ω cm~100 it
Between.Plasma enhanced chemical vapor deposition technology (Plasma Enhanced Chemical Vapor are utilized in substrate face
Deposition, PECVD) one layer of nitride or oxide are deposited as laser anti-reflexion layer, its thickness is less than 100nm, tool
Body thickness should be depending on the situation of film and the wavelength of the laser selected.
Then photoetching is carried out in substrate, by being dried to the whirl coating of photoresist, photoetching, development and UV, makes photoetching
Glue sacrifice layer, the space as fixed structure is formed, in Fig. 4 shown in (a), the white space of left is actuating arm and silicon chip
Contact portion, as fixed structure shape, for depositing the material of corresponding fixed structure afterwards.
Step S304：Second of photoetching is carried out in structure after a photoetching, it is bigger to form a width in gap
Shallow grooves, a groove structure is formed in the close position of the shallow grooves；
In the present embodiment, the whirl coating, photoetching, development and the UV baking steps that carry out second of photoresist form shallow grooves, such as
In Fig. 4 shown in (b), the effect of shallow grooves and a groove structure is to pass through the machine after thin film deposition to increase actuating arm below
Tool intensity.
It should be noted that the setting in step S304 on shallow grooves and a groove structure, simply improves mechanical strength
A preferably technical scheme.
In the present embodiment, the gross thickness of two layers of photoresist is 2~10 μm.
Step S306：Terahertz absorbent layer structure plate is made in structure after photoetching；
In the present embodiment, Terahertz absorbent layer structure is made using the mode of chemical vapor deposition or physical vapour deposition (PVD)
Plate 11.
In the present embodiment, step S306 includes：
Lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf are sequentially depositing in structure after photoetching；Carve
Lower protective layer, Terahertz absorbed layer, optical reflecting layer and the structure sheaf of eating away two side portions are to photoetching glue victim layer upper surface；
And deposit up-protective layer on structure sheaf after etching.
The film being sequentially depositing from the bottom up first is respectively：Lower protective layer 111, Terahertz absorbed layer 112, optics are anti-
Penetrate layer 113 and structure sheaf 114.Wherein, the thickness of lower protective layer 111 is less than 200nm, and the selection of its thickness is with can be with maximum journey
Degree is standard through Terahertz, and material can be the insulating materials of silica or silicon nitride etc.；Terahertz absorbed layer 112
The material of use includes but is not limited to：Ti, TiN, TiW, TiWN or W etc.；Optical reflecting layer 113 is laser reflection layer, laser
Reflecting layer should select flatness it is higher, have larger reflectance factor metallic film, such as Ag, Al or category compound such as
AlSiCu, AlCu etc.；Structure sheaf 114 is nitride, oxide or nitrogen oxides, and thickness is 1~10 μm.Wherein, lower protective layer
Photoetching glue victim layer is covered all, and is filled with the space as fixed structure, in reference picture 4 shown in (c)；Then use
Reactive ion etching (Reactive Ion Etching, RIE) is to the photoresist surface being hardened, as a result such as (d) institute in Fig. 4
Show, up-protective layer is deposited on structure sheaf, obtain Terahertz absorbent layer structure plate, in post-depositional result reference picture 4 (e)
Signal on Terahertz absorbent layer structure plate.In the present embodiment, the material of up-protective layer is silica, silicon nitride or nitrogen oxygen
SiClx, thickness are less than 50nm.
Step S308：Actuating arm subsurface material, driving are successively deposited in the both sides of obtained Terahertz absorbent layer structure plate
Arm upper layer of material, and graphical treatment is carried out, make double-deck driving arm configuration；
In the present embodiment, in photoetching glue victim layer upper surface, the actuating arm subsurface material of deposition is silica or silicon nitride,
The actuating arm upper layer of material of deposition is the metals such as Al, Cu, and graphically actuating arm upper layer of material, in Fig. 4 shown in (e), so
Graphical actuating arm subsurface material afterwards, to form complete double-deck driving arm configuration, in Fig. 4 shown in (f).
Step S310：Photoetching glue victim layer is removed, forms the hanging structure of actuating arm and Terahertz absorbent layer structure plate,
Complete the making of terahertz imaging array chip.
In the present embodiment, the photoetching glue victim layer among removing is etched using high-energy oxygen plasma, to form driving
The hanging structure of arm and Terahertz absorbent layer structure plate, in Fig. 4 shown in (g).
The structure for the terahertz imaging array chip that the present embodiment prepares meets：Terahertz ray is from the chip
Below Terahertz absorbent layer structure plate Terahertz absorbed layer is incident to through silicon substrate.
It should be noted that the step of up-protective layer is deposited in step S306, on structure sheaf after etching can also tie
Conjunction is implemented together in step S308, i.e., deposits up-protective layer on the structure sheaf of etching；Sunk in photoetching glue victim layer upper surface
Product actuating arm lower floor and upper layer of material, and carry out graphical treatment.
Fig. 5 is the image of the terahertz imaging array chip made based on Surface Machining MEMS technology, wherein, (a) is light
Optical microscope image before the removal of photoresist sacrifice layer；(b) SEM image after being removed for photoetching glue victim layer.
(a), (b) are understood in reference picture 5, the terahertz imaging array chip made based on Surface Machining MEMS technology
Each imaging unit includes the Terahertz absorbent layer structure plate at center and four hanging actuating arms of both sides, these imaging units
Equidistantly arranged according to pixel.By the size of the terahertz imaging array chip of making and one 10 cents of coin phase
Than its size is suitable with coin, or even the also less than size of coin.
In the 3rd exemplary embodiment of the disclosure, there is provided the making of another terahertz imaging array chip
Method.
Fig. 6 is the preparation method flow chart according to another embodiment terahertz imaging array chip of the disclosure.Fig. 7 is root
Combined according to another embodiment of the disclosure using silicon face processing technology and Bulk micro machining and make terahertz imaging array chip
Process schematic；Wherein, (a) is to the graphical of soi wafer upper layer of silicon, makes a groove structure；(b) it is using reaction
Ion etching method and photoetching process etching sacrificial silicon layer, etch the space of fixed structure；(c) to be sequentially depositing lower protective layer, too
Hertz absorbed layer, optical reflecting layer and structure sheaf；(d) it is to be etched to the upper surface of sacrificial silicon layer；(e) it is on structure sheaf
Deposit up-protective layer；Actuating arm lower floor and upper layer of material are deposited in sacrificial silicon layer upper surface, and upper layer of material is graphical；(f)
For the graphical of actuating arm subsurface material；(g) it is to carry out deep silicon etching from substrate back, then using XF2Gas etching falls silicon
Sacrifice layer, forms the hanging structure of actuating arm and Terahertz absorbent layer structure plate, and substrate is relative with Terahertz absorbent layer structure plate
Part carry Terahertz incidence window.
From the point of view of Fig. 6 and Fig. 7, the preparation method of the terahertz imaging array chip of the disclosure, including：
Step S602：Photoetching and etching are carried out to the sacrificial silicon layer on substrate, form the space and one as fixed structure
Groove structure；
In the present embodiment, substrate is double section SOI (Silicon on Insulator) silicon chips, and its upper layer of silicon is as sacrificial
Domestic animal layer, thickness is between 2 μm~10 μm.
Plasma enhanced chemical vapor deposition technology (Plasma Enhanced Chemical are utilized in substrate face
Vapor Deposition, PECVD) deposition one layer of nitride or oxide be less than as laser anti-reflexion layer, its thickness
100nm, specific thickness should be depending on the situations of film and the wavelength of the laser selected.
Then the fixed structure between hanging actuating arm and substrate is made using the mode of photoetching and reactive ion etching,
And a groove structure is made, to increase the mechanical strength of actuating arm.In the present embodiment, photoetching is carried out on soi wafer,
The upper surface silicon etching of soi wafer is gone out into shape, makes sacrificial silicon layer, the space as fixed structure is formed, in Fig. 7 (a)
Shown, white space therein is a groove structure, and the effect of the groove structure is to pass through film to increase actuating arm below
Post-depositional mechanical strength.Then in conjunction with photoetching and reactive ion etching, be etched to soi wafer silica oxygen buried layer it
On, etching depth is 1 μm~2 μm or so, it is impossible to which etching enters silica oxygen buried layer, in Fig. 7 shown in (b), in left
White space is the shape of the contact portion, as fixed structure of actuating arm and substrate, for depositing corresponding fixed knot afterwards
The material of structure.
In the present embodiment, the gross thickness of two layers of photoresist is 2~10 μm.
Step S604：Terahertz absorbent layer structure plate is made in structure after etching；
In the present embodiment, Terahertz absorbent layer structure is made using the mode of chemical vapor deposition or physical vapour deposition (PVD)
Plate 11.
In the present embodiment, step S604 includes：
Lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf are sequentially depositing in structure after etching；Carve
Lower protective layer, Terahertz absorbed layer, optical reflecting layer and the structure sheaf of eating away two side portions are to the upper surface of sacrificial silicon layer；With
And deposit up-protective layer on structure sheaf after etching.
The film being sequentially depositing from the bottom up first is respectively：Lower protective layer 111, Terahertz absorbed layer 112, optics are anti-
Penetrate layer 113 and structure sheaf 114.Wherein, the thickness of lower protective layer 111 is less than 200nm, and the selection of its thickness is with can be with maximum journey
Degree is standard through Terahertz, and material can be but be not limited to the insulating materials such as silica or silicon nitride；Terahertz absorbed layer
112 materials used include but is not limited to：Ti, TiN, TiW, TiWN or W etc.；Optical reflecting layer 113 is laser reflection layer, is swashed
The reflecting layer of light should select flatness it is higher, have larger reflectance factor metallic film, such as Ag, Al or category compound such as
AlSiCu etc.；Structure sheaf 114 is nitride or oxide, and thickness is 1~4 μm.Wherein, lower protective layer covers all silicon
Sacrifice layer, and the space as fixed structure is filled with, in reference picture 7 shown in (c)；Then reactive ion etching is used
(Reactive Ion Etching, RIE) as a result as shown in (d) in Fig. 7, deposits to the surface of sacrificial silicon layer on structure sheaf
Up-protective layer, obtains Terahertz absorbent layer structure plate, (e's) on Terahertz absorbed layer in post-depositional result reference picture 7
The signal of structural slab.In the present embodiment, the material of up-protective layer is silica or silicon nitride, and thickness is less than 50nm.
Step S606：Actuating arm subsurface material, driving are successively deposited in the both sides of obtained Terahertz absorbent layer structure plate
Arm upper layer of material, and graphical treatment is carried out, make double-deck driving arm configuration；
In the present embodiment, in sacrificial silicon layer upper surface, the actuating arm subsurface material of deposition is silica or silicon nitride, is deposited
Actuating arm upper layer of material be the metal such as Al, Cu, and graphical actuating arm upper layer of material, in Fig. 7 shown in (e), Ran Houtu
Shape actuating arm subsurface material, to form complete double-deck driving arm configuration, in Fig. 7 shown in (f).
Step S608：Remove the substrate of sacrificial silicon layer and Terahertz absorbent layer structure plate face part, formed actuating arm and
The hanging structure of Terahertz absorbent layer structure plate, complete the making of terahertz imaging array chip.
In the present embodiment, it is patterned at the soi wafer back side, the lining in Terahertz absorbent layer structure plate face part
A Terahertz incidence window is opened on bottom, silica oxygen buried layer is etched to using deep silicon etching technology, and go using RIE
Except silica, use XF afterwards2Gas isotropic etching falls sacrificial silicon layer, is absorbed with forming actuating arm and Terahertz
The hanging structure of Rotating fields plate, in Fig. 7 shown in (g).
The structure for the terahertz imaging array chip that the present embodiment prepares meets：Terahertz ray passes through Terahertz
Incidence window, Terahertz absorbed layer is incident to directly below from the Terahertz absorbent layer structure plate of the chip.
It should be noted that the step of up-protective layer is deposited in step S604, on structure sheaf after etching can also tie
Conjunction is implemented together in step S606, i.e., deposits up-protective layer on structure sheaf after etching；Deposited in sacrificial silicon layer upper surface
Actuating arm lower floor and upper layer of material, and carry out graphical treatment.
Carry out the system on terahertz imaging array chip in second embodiment of Integrated comparative and the 3rd embodiment below
Make method：For from preparation technology, the preparation method shown in the 3rd embodiment is more direct and simple；Using second
Method shown in embodiment make terahertz imaging array chip, it is necessary to select suitable photoresist or other working substances
As sacrificial layer material, the sacrificial layer material needs to keep physics, the stabilization of chemical property in follow-up processing technology matter,
Technique is more relative complex；And it is direct to use the method shown in second embodiment to carry out making terahertz imaging array chip
Soi wafer and deep silicon etching technique are selected, directly using the upper silicon layer of soi wafer as sacrifice layer, it is not necessary to select photoetching
Glue or other operation materials are more relatively easy as sacrificial layer material, technique；For from cost of manufacture, because deep silicon is carved
Erosion and SOI substrate are compared and for silicon face processing technology and silicon substrate, cost is higher, therefore shown in second embodiment
Preparation method cost is relatively low；In terms of Vacuum Package, the preparation method shown in second embodiment is without open-minded on a silicon substrate
Terahertz incidence window, therefore the anode linkage mode of glass and silicon can be used to carry out Vacuum Package, the encapsulation is more simple
It is single；Using the preparation method shown in the 3rd embodiment, because the upper and lower faces of chip are required for being bonded with glass, because
This encapsulation is complex, it is contemplated that adding appropriate inert gas such as Ne, He in encapsulation process, increases certain damping
Power, to prevent the periodic vibration of structural slab.
In the 4th exemplary embodiment of the disclosure, there is provided a kind of terahertz imaging system.
Fig. 8 is the structural representation according to embodiment of the present disclosure terahertz imaging system.
Shown in reference picture 8, the terahertz imaging system of the disclosure, including：Terahertz imaging array chip, by Terahertz
Imaging unit equidistantly arranges according to pixel, and the terahertz imaging unit includes：Substrate 100；Terahertz absorbent layer structure plate
11, above substrate, distance between substrate be present；Hanging actuating arm 12, positioned at the two of Terahertz absorbent layer structure plate 11
Side, wherein one end are fixed, and one end is hanging, and hanging side is fixed with Terahertz absorbent layer structure plate, including two layers of different expansion
The material of coefficient；And fixed structure 13, connect the fixing end of substrate 100 and hanging actuating arm 12；One laser, is positioned over
The oblique upper of terahertz imaging array chip, launch laser to the terahertz imaging array chip, and by the terahertz imaging battle array
Row chip carries out the reflection of laser；One lens, the laser of reflection is focused；And a ccd array, it is positioned over reflection and swashs
On the imaging plane of light, receive and reflected by terahertz imaging array chip and by the laser of lens focus.
In the present embodiment, hot spot of the laser on terahertz imaging array chip of laser transmitting is greater than Terahertz
The gross area of imaging array chip, so that the imaging system detects the heat absorption situation of all Terahertz chip pixel units.
The operation principle of the terahertz imaging system is introduced with reference to Fig. 8：Terahertz is from terahertz imaging chip
Bottom is incident, causes the rotation of Terahertz absorbent layer structure plate.One laser is placed on the oblique upper of terahertz imaging chip,
To the chip emission laser, hot spot of the laser on terahertz imaging chip is greater than the gross area of terahertz imaging chip.Instead
The ccd array that the laser penetrated is placed in imaging plane by lens absorbs.The incident intensity of CCD picture points absorbs with Terahertz
The anglec of rotation of Rotating fields plate is related.Therefore, each picture points of CCD correspond to each picture point of terahertz imaging array chip,
By detecting the incident intensity of CCD picture points, Terahertz image can be directly obtained.
The CCD optical signallings acquisition system of the detecting system uses commercial system, eliminates and makes professional Terahertz reading
The complicated manufacturing process of sense circuit, it is simple in construction, it is easy to use.
In summary, the embodiment of the present disclosure provides a kind of structure of terahertz imaging array chip, passes through tectonic forcing
The hanging structure of arm and Terahertz absorbent layer structure plate, and actuating arm is made using the flexible principle of two temperature sensitivity piece thermic, often
Group actuating arm includes two L-shaped structures, and the L-shaped structure includes upper strata metal material and subsurface material (oxide or nitride),
And upper layer of material has higher thermal coefficient of expansion than subsurface material；After ambient temperature changes, the internal layer of every group of actuating arm
Identical angle of bend can be produced with outer layer L shapes structure so that actuating arm distal end and the node of Terahertz absorbent layer structure plate
Relative displacement is not produced, effectively eliminates influence of the ambient temperature change to device so that the terahertz imaging array chip has
There is automatic temperature compensation function；Two kinds of preparation methods of terahertz imaging array chip are additionally provided, and provide one kind
Terahertz imaging system, directly build imaging system by using laser and CCD optical signallings acquisition system and be imaged, save
Go integrated with output circuit, simple in construction, cost is relatively low.
It should be noted that the direction term mentioned in embodiment, for example, " on ", " under ", "front", "rear", " left side ",
" right side " etc., only it is the direction of refer to the attached drawing, is not used for limiting the protection domain of the disclosure.Through accompanying drawing, identical element by
Same or like reference represents.When understanding of this disclosure may be caused to cause to obscure, conventional structure will be omitted
Or construction.And the shape and size of each part do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference symbol between bracket should not be configured to the limit to claim
System.Furthermore word "comprising" or " comprising " do not exclude the presence of element or step not listed in the claims.Positioned at element it
Preceding word "a" or "an" does not exclude the presence of multiple such elements.
In addition, unless specifically described or the step of must sequentially occur, the order of above-mentioned steps, which has no, is limited to above institute
Row, and can change or rearrange according to required design.And above-described embodiment can based on design and reliability consideration,
The collocation that is mixed with each other uses using or with other embodiment mix and match, i.e., the technical characteristic in different embodiments can be free
Combination forms more embodiments.
Particular embodiments described above, the purpose, technical scheme and beneficial effect of the disclosure are carried out further in detail
Describe in detail bright, should be understood that the specific embodiment that the foregoing is only the disclosure, be not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution and improvements done etc., the guarantor of the disclosure should be included in
Within the scope of shield.
Claims (10)
1. a kind of terahertz imaging array chip, equidistantly arranged according to pixel by terahertz imaging unit, the Terahertz into
As unit includes：
Substrate；
, above substrate, distance between substrate be present in Terahertz absorbent layer structure plate；
Hanging actuating arm, positioned at the both sides of Terahertz absorbent layer structure plate, wherein one end is fixed, and one end is hanging, hanging side
Fixed with Terahertz absorbent layer structure plate, include the material of two layers of different coefficient of expansion；And
Fixed structure, connect the fixing end of substrate and hanging actuating arm.
2. terahertz imaging array chip according to claim 1, wherein, the hanging actuating arm is two groups, and every group hangs
Empty actuating arm includes two L-shaped structures, is divided into interior L-shaped structure and outer L-shaped structure, is fixed on substrate by respective fixing end respectively
On；The interior L-shaped structure and outer L-shaped structure of every group of hanging structure connect between the two-arm away from fixing end for U-shaped；The two L
Shape structure includes subsurface material, in that two-arm close to fixing end, also includes upper layer of material on subsurface material, and on
Layer material has higher thermal coefficient of expansion than subsurface material.
3. terahertz imaging array chip according to claim 1, wherein, the Terahertz absorbent layer structure plate from lower and
On include：Lower protective layer, Terahertz absorbed layer, optical reflecting layer, structure sheaf and up-protective layer.
4. terahertz imaging array chip according to claim 3, wherein：
The lower protective layer can pass through Terahertz；And/or
The material of the Terahertz absorbed layer includes the one or more in following material：Ti, TiN, TiW, TiWN or W；And/or
The optical reflecting layer is the reflecting layer of laser, including one or more in following material：Metal, including：Ag、Al；
Or metallic compound, including：AlSiCu、AlCu；And/or
The material of the structure sheaf includes：Nitride, oxide or nitrogen oxides；And/or
The thickness of the structure sheaf is between 1 μm~10 μm.
5. terahertz imaging array chip according to claim 1, the size of the terahertz imaging array chip between
Between 30 μm~300 μm.
6. a kind of preparation method of terahertz imaging array chip, including：
Photoetching glue victim layer is made on a silicon substrate and carries out photoetching, forms the space as fixed structure；
Second of photoetching is carried out in structure after a photoetching, the bigger shallow grooves of a width are formed in gap, it is shallow at this
The close position of groove forms a groove structure；
Terahertz absorbent layer structure plate is made in structure after photoetching；
Actuating arm subsurface material, actuating arm upper layer of material are successively deposited in the both sides of obtained Terahertz absorbent layer structure plate, and
Processing is patterned, makes double-deck driving arm configuration；And
Photoetching glue victim layer is removed, forms the hanging structure of actuating arm and Terahertz absorbent layer structure plate, completes terahertz imaging
The making of array chip.
7. a kind of preparation method of terahertz imaging array chip, including：
Photoetching and etching are carried out to the sacrificial silicon layer on soi wafer substrate, form the space as fixed structure and a groove knot
Structure；
Terahertz absorbent layer structure plate is made in structure after etching；
Actuating arm subsurface material, actuating arm upper layer of material are successively deposited in the both sides of obtained Terahertz absorbent layer structure plate, and
Processing is patterned, makes double-deck driving arm configuration；And
Sacrificial silicon layer and the substrate of Terahertz absorbent layer structure plate face part are removed, forms actuating arm and Terahertz absorbed layer knot
The hanging structure of structure plate, complete the making of terahertz imaging array chip.
8. the preparation method according to claim 6 or 7, wherein：
Terahertz absorbent layer structure plate is made in the structure after photoetching to be included：Under being sequentially depositing in structure after photoetching
Protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf；Etch away the lower protective layers of two side portions, Terahertz absorbed layer,
Optical reflecting layer and structure sheaf are to photoetching glue victim layer upper surface；And deposit up-protective layer on structure sheaf after etching；
Terahertz absorbent layer structure plate is made in the structure after etching to be included：It is sequentially depositing down in structure after etching
Protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf；Etch away the lower protective layers of two side portions, Terahertz absorbed layer,
Optical reflecting layer and structure sheaf are to the upper surface of sacrificial silicon layer；And deposit up-protective layer on structure sheaf after etching.
9. a kind of terahertz imaging system, including：
Terahertz imaging array chip described in any one of claim 1 to 5；
One laser, the oblique upper of terahertz imaging array chip is positioned over, launches laser to the terahertz imaging array chip,
And the reflection of laser is carried out by the terahertz imaging array chip；
One lens, the laser of reflection is focused；And
One ccd array, is positioned on the imaging plane of reflection laser, receives and is reflected by terahertz imaging array chip and by lens
The laser of focusing.
10. imaging system according to claim 9, Terahertz is incident from the bottom of the terahertz imaging array chip,
Cause the rotation of Terahertz absorbent layer structure plate；Each picture point of the ccd array correspond to terahertz imaging array chip
Each picture point, by detecting the incident intensity of CCD picture points, obtain Terahertz image.
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| CN108281504A (en) * | 2018-01-08 | 2018-07-13 | 华东师范大学 | A kind of highly sensitive silicon based opto-electronics of room temperature lead Terahertz detector and preparation method thereof |
| CN110702712A (en) * | 2018-07-09 | 2020-01-17 | 北京声迅电子股份有限公司 | Security check machine and security check channel equipment |
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