CN107478336B - Terahertz imaging array chip and preparation method thereof, imaging system - Google Patents
Terahertz imaging array chip and preparation method thereof, imaging system Download PDFInfo
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- CN107478336B CN107478336B CN201710783618.3A CN201710783618A CN107478336B CN 107478336 B CN107478336 B CN 107478336B CN 201710783618 A CN201710783618 A CN 201710783618A CN 107478336 B CN107478336 B CN 107478336B
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- 238000003384 imaging method Methods 0.000 title claims abstract description 133
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 116
- 239000002250 absorbent Substances 0.000 claims abstract description 78
- 230000002745 absorbent Effects 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 230000003287 optical effect Effects 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims description 284
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 56
- 229910052710 silicon Inorganic materials 0.000 claims description 56
- 239000010703 silicon Substances 0.000 claims description 56
- 239000011241 protective layer Substances 0.000 claims description 50
- 238000001259 photo etching Methods 0.000 claims description 49
- 238000004519 manufacturing process Methods 0.000 claims description 43
- 238000005530 etching Methods 0.000 claims description 33
- 239000003292 glue Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 21
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910016570 AlCu Inorganic materials 0.000 claims description 4
- -1 comprising: AlSiCu Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910000765 intermetallic Inorganic materials 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 230000011664 signaling Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 238000005452 bending Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 229910001935 vanadium oxide Inorganic materials 0.000 description 4
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000005439 thermosphere Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
Abstract
The invention discloses a kind of terahertz imaging array chips and preparation method thereof, imaging system.Wherein, terahertz imaging array chip is equidistantly arranged by terahertz imaging unit according to pixel, which includes: substrate；Terahertz absorbent layer structure plate is located above substrate, and there are distances between substrate；Hanging actuating arm, positioned at the two sides of Terahertz absorbent layer structure plate, wherein one end is fixed, and one end is hanging, and hanging side is fixed with Terahertz absorbent layer structure plate, the material including two layers of different coefficient of expansion；And fixed structure, connect the fixing end of substrate and hanging actuating arm.The terahertz imaging array chip has automatic temperature compensation function；And laser and CCD optical signalling acquisition system direct imaging are used, eliminate integrated with output circuit, structure is simple, and cost is relatively low.
Description
Technical field
The disclosure belongs to terahertz imaging construction applications, be related to a kind of terahertz imaging array chip and preparation method thereof,
Imaging system.
Background technique
In electromagnetic wave frequency range, the frequency range of Terahertz (Terahertz, THz) radiation is 100GHz to 10THz, is situated between
Between microwave and far infrared.This section of frequency range is called Terahertz blank gap before, be because microwave and radio frequency source frequency without
Method extends to Terahertz section, and the frequency of optical launcher can not be reduced to this section.However in more than ten years in past, terahertz
Application hereby is taken seriously, and is had many scholars to enter this field, is greatly speeded up the development process of THz source and detector, this
A Terahertz blank gap reduces rapidly.The application field of Terahertz is extensive, can be applied to the chemical component point of ppm rank
Analysis, the internal information, proximity detection, safety detection, non-destructive testing, the imaging technique that obtain material etc..
For terahertz imaging field, the mode of imaging have single sensing element scanning mode and Terahertz sensor array (by
Single sensing unit array composition) two classes.The application of some Terahertzs, such as public place safety check, nondestructive material control, it is right
The fast imaging requirement of terahertz imaging meter is very high, needs using array imaging method.Sensing unit can be based on optical conductor
Antenna, electro optic sampling technology and several major class of heat radiation tester.Wherein, heat radiation tester is that the micromechanics based on silicon substrate adds
Work technology (Micro-Electro-Mechanical System, MEMS) changes the electrical properties of sensing unit using heat absorption
Principle made.The manufacture craft of heat radiation tester is compatible with CMOS, does not need to introduce complicated III-VI race member
Plain manufacture craft.Traditional heat radiation tester uses vanadium oxide (VOx) it is used as thermally sensitive layer, mainly utilize its higher thermal resistance
Coefficient, but deposited oxide vanadium needs to carry out at higher temperatures, therefore usually requires deposition one layer or several layers of suctions on vanadium oxide upper layer
The sensitivity of thermosphere increase device.The material of heat-sink shell generally includes Ni, NiCr, Ti, W, TiN and TiWN, and absorb heat layer film
It can be deposited by the method for physical vapour deposition (PVD) (PVD).Heat-sink shell and thermally sensitive layer will vacantly be located in the production process
Reason is to be thermally isolated.Sensing unit will usually be carried out with reading circuit (Read Out Integrated Circuit, ROIC)
Bonding processing, reading circuit using specific integrated circuit (Application Specific Integrated Circuit,
ASIC), each sensing element corresponds to top sensing unit.Also need cooperation clock control circuit, filtering and amplifying circuit, modulus
Conversion circuit and export.Temperature sensor and certain algorithm are additionally needed to carry out temperature-compensating to sensing unit.
Traditional Terahertz heat radiation tester based on the thermo-responsive film production of vanadium oxide needs and reading circuit
(ROIC) it integrates and carries out signal-obtaining；And traditional Terahertz heat radiation tester itself does not have temperature compensation structure, needs
It is integrated into together with temperature sensor in terahertz imaging system, carrys out influence of the compensation temperature to device itself.As it can be seen that traditional
Heat radiation tester based on thermo-responsive principle needs to cooperate with circuit system, and self structure is complicated, and the tradition built by it
The structure of terahertz imaging system is also sufficiently complex, higher cost.
Summary of the invention
(1) technical problems to be solved
Present disclose provides a kind of terahertz imaging array chips and preparation method thereof, imaging system, at least partly to solve
Technical problem certainly set forth above.
(2) technical solution
According to one aspect of the disclosure, a kind of terahertz imaging array chip is provided, is pressed by terahertz imaging unit
Photograph vegetarian refreshments equidistantly arranges, which includes: substrate；Terahertz absorbent layer structure plate is located above substrate,
There are distances between substrate；Hanging actuating arm, positioned at the two sides of Terahertz absorbent layer structure plate, wherein one end is fixed, one end
Vacantly, hanging side is fixed with Terahertz absorbent layer structure plate, the material including two layers of different coefficient of expansion；And fixed knot
Structure connects the fixing end of substrate and hanging actuating arm.
In some embodiments of the present disclosure, hanging actuating arm is two groups, and every group of hanging actuating arm includes two L shape knots
Structure is divided into interior L-shaped structure and outer L-shaped structure, fixed on substrate by respective fixing end respectively；The interior L of every group of hanging structure
Shape structure and outer L-shaped structure connect between the two-arm far from fixing end for U-shaped；The two L-shaped structures include subsurface material,
It include also upper layer of material on subsurface material, and upper layer of material has than subsurface material in that two-arm close to fixing end
Higher thermal expansion coefficient.
In some embodiments of the present disclosure, Terahertz absorbent layer structure plate includes: lower protective layer, Terahertz from bottom to top
Absorbed layer, optical reflecting layer, structure sheaf and up-protective layer.
In some embodiments of the present disclosure, lower protective layer can be such that Terahertz penetrates；And/or the material of Terahertz absorbed layer
Material includes one or more of following material: Ti, TiN, TiW, TiWN or W；And/or optical reflecting layer is the reflection of laser
Layer, including one or more of following material: metal, comprising: Ag, Al；Or metallic compound, comprising: AlSiCu,
AlCu；And/or the material of structure sheaf includes: nitride, oxide or nitrogen oxides；And/or the thickness of structure sheaf between 1 μm~
Between 10 μm.
In some embodiments of the present disclosure, the size of terahertz imaging array chip is between 30 μm~300 μm.
A kind of production method of terahertz imaging array chip another aspect of the present disclosure provides, comprising:
Photoetching glue victim layer is made on silicon substrate and carries out photoetching, forms the gap for being used as fixed structure；Structure after a photoetching
Second of photoetching of upper progress, forms the bigger shallow grooves of a width in gap, and it is recessed to form one in the close position of the shallow grooves
Slot structure；Terahertz absorbent layer structure plate is made in structure after photoetching；The two of obtained Terahertz absorbent layer structure plate
Side successively deposits actuating arm subsurface material, actuating arm upper layer of material, and carries out graphical treatment, makes the double-deck driving arm configuration；
And removal photoetching glue victim layer, the hanging structure of actuating arm and Terahertz absorbent layer structure plate is formed, terahertz imaging is completed
The production of array chip.
According to the another aspect of the disclosure, a kind of production method of terahertz imaging array chip is provided, comprising: right
Sacrificial silicon layer on soi wafer substrate carries out lithography and etching, forms the gap for being used as fixed structure and a groove structure；It is carving
Terahertz absorbent layer structure plate is made in structure after erosion；Drive is successively deposited in the two sides of obtained Terahertz absorbent layer structure plate
Swing arm subsurface material, actuating arm upper layer of material, and graphical treatment is carried out, make the double-deck driving arm configuration；And removal silicon is sacrificial
The substrate of domestic animal layer and Terahertz absorbent layer structure plate face part, forms the hanging knot of actuating arm and Terahertz absorbent layer structure plate
Structure completes the production of terahertz imaging array chip.
In some embodiments of the present disclosure, in the structure after photoetching make Terahertz absorbent layer structure plate include:
Lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf are sequentially depositing in structure after photoetching；Etch away two side portions
Lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf to photoetching glue victim layer upper surface；And after etching
Up-protective layer is deposited on structure sheaf；It includes: knot after etching that Terahertz absorbent layer structure plate is made in structure after etching
Lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf are sequentially depositing on structure；Etch away the lower protection of two side portions
Layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf are to the upper surface of sacrificial silicon layer；And it sinks on structure sheaf after etching
Product up-protective layer.
According to other one aspect of the disclosure, a kind of terahertz imaging system is provided, comprising: what the disclosure was mentioned appoints
A kind of terahertz imaging array chip；One laser is placed in the oblique upper of terahertz imaging array chip, to the Terahertz at
As array chip transmitting laser, and by the reflection of terahertz imaging array chip progress laser；One lens, by the laser of reflection
It is focused；And a ccd array, it is placed on the imaging plane of reflection laser, receives anti-by terahertz imaging array chip
It penetrates and by the laser of lens focus.
In some embodiments of the present disclosure, Terahertz is incident from the bottom of the terahertz imaging array chip, causes too
The rotation of hertz absorbent layer structure plate；Each picture point of ccd array corresponds to each picture point of terahertz imaging array chip, leads to
The incident intensity for crossing detection CCD picture point, obtains terahertz image.
(3) beneficial effect
It can be seen from the above technical proposal that the disclosure provide terahertz imaging array chip and preparation method thereof, at
As system, have the advantages that
It is stretched by the hanging structure of tectonic forcing arm and Terahertz absorbent layer structure plate, and using two temperature sensitivity piece is thermotropic
Contracting principle makes actuating arm, and every group of actuating arm includes two L-shaped structures, which includes upper layer of material and subsurface material, and
Upper layer of material has higher thermal expansion coefficient than subsurface material；After Terahertz incidence, the raising of absorbed layer temperature leads to every group
The interior L-shaped structure of actuating arm is bent, and drives the rotation of absorbent layer structure plate.After variation of ambient temperature, every group of actuating arm it is interior
Layer and outer layer L-shaped structure can generate identical bending angle, so that the node of actuating arm distal end and Terahertz absorbent layer structure plate
Relative displacement is not generated, influence of the variation of ambient temperature to device has been effectively removed, so that the terahertz imaging array chip has
There is automatic temperature compensation function；And laser and CCD optical signalling acquisition system direct imaging are used, it eliminates and output circuit
It is integrated, structure is simple, and cost is relatively low.
Detailed description of the invention
Figure 1A is the structural schematic diagram according to embodiment of the present disclosure terahertz imaging array chip list pixel.
Figure 1B is the terahertz according to embodiment of the present disclosure terahertz imaging array chip list pixel under Terahertz radiation exposure
Structural schematic diagram after hereby absorbent layer structure plate rotation.
Fig. 2 is the structure chart according to embodiment of the present disclosure terahertz imaging array chip list pixel.
Fig. 3 is the production method flow chart according to one embodiment terahertz imaging array chip of the disclosure.
Fig. 4 is the process for being made terahertz imaging array chip of silicon face processing technology according to one embodiment of the disclosure
Schematic diagram；Wherein, (a) is the graphical of first time photoetching glue victim layer；It (b) is the graphical of second of photoetching glue victim layer；
It (c) is to be sequentially depositing lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf；It (d) is to be etched to photoresist sacrifice
The upper surface of layer；It (e) is that up-protective layer is deposited on structure sheaf；Actuating arm lower layer and upper is deposited in photoetching glue victim layer upper surface
Layer material, and upper layer of material is graphical；It (f) is the graphical of actuating arm subsurface material；It (g) is removal photoetching glue victim layer,
Form the hanging structure of actuating arm and Terahertz absorbent layer structure plate.
Fig. 5 is the image that the terahertz imaging array chip of MEMS technology production is processed based on surface, wherein (a) is light
Optical microscope image before the removal of photoresist sacrificial layer；It (b) is the SEM image after photoetching glue victim layer removal.
Fig. 6 is the production method flow chart according to another embodiment terahertz imaging array chip of the disclosure.
Fig. 7 is to combine production terahertz using silicon face processing technology and Bulk micro machining according to another embodiment of the disclosure
The hereby process schematic of imaging array chip；Wherein, (a) is to make a groove structure to the graphical of soi wafer upper layer of silicon；
(b) to etch sacrificial silicon layer using reactive ion etching method and photoetching process, the gap of fixed structure is etched；It (c) is successively to sink
Product lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf；It (d) is the upper surface for being etched to sacrificial silicon layer；(e)
To deposit up-protective layer on structure sheaf；Actuating arm lower layer and upper layer of material are deposited in sacrificial silicon layer upper surface, and by upper layer material
Material is graphical；It (f) is the graphical of actuating arm subsurface material；(g) to carry out deep silicon etching from substrate back, XF is then used2
Gas etching falls sacrificial silicon layer, forms the hanging structure of actuating arm and Terahertz absorbent layer structure plate, and substrate and Terahertz absorb
The opposite part of layer structural slab has Terahertz incident window.
Fig. 8 is the structural schematic diagram according to embodiment of the present disclosure terahertz imaging system.
[symbol description]
100- substrate；
11- Terahertz absorbent layer structure plate；
111- lower protective layer；112- Terahertz absorbed layer；
113- optical reflecting layer；114- structure sheaf；
115- up-protective layer；
The hanging actuating arm of 12-；
121- actuating arm subsurface material；122- actuating arm upper layer of material；
123- groove structure；
13- fixed structure.
Specific embodiment
Present disclose provides a kind of terahertz imaging array chips and preparation method thereof, imaging system, pass through tectonic forcing
The hanging structure of arm and Terahertz absorbent layer structure plate, and actuating arm is made using the thermotropic flexible principle of two temperature sensitivity piece, often
Group actuating arm includes two L-shaped structures, which includes upper layer metal material and subsurface material (oxide, nitride or nitrogen
Oxide), and upper layer of material has higher thermal expansion coefficient than subsurface material；After ambient temperature variation, every group of driving
The internal layer and outer layer L-shaped structure of arm can generate identical bending angle, so that actuating arm distal end and Terahertz absorbent layer structure plate
Node do not generate relative displacement, effectively removed ambient temperature and changed influence to device, so that the terahertz imaging array
Chip has automatic temperature compensation function；And using laser and CCD optical signalling acquisition system directly build imaging system into
Row imaging, eliminates integrated with output circuit, and structure is simple, and cost is relatively low.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
In first exemplary embodiment of the disclosure, a kind of terahertz imaging array chip is provided.
Figure 1A is the structural schematic diagram according to embodiment of the present disclosure terahertz imaging array chip list pixel；According to Figure 1B
Embodiment of the present disclosure terahertz imaging array chip list pixel is under Terahertz radiation exposure, the rotation of Terahertz absorbent layer structure plate
Structural schematic diagram later；Fig. 2 is the structure chart according to embodiment of the present disclosure terahertz imaging array chip list pixel.
In conjunction with Figure 1A-Figure 1B, the terahertz imaging array chip of the disclosure, by terahertz imaging unit according to pixel etc.
Spacing arrangement, the terahertz imaging unit include: substrate 100；Terahertz absorbent layer structure plate 11 is located above substrate, with lining
There are distances between bottom；Hanging actuating arm 12, positioned at the two sides of Terahertz absorbent layer structure plate 11, wherein one end is fixed, one end
Vacantly, hanging side is fixed with Terahertz absorbent layer structure plate, the material including two layers of different coefficient of expansion；And fixed knot
Structure 13 connects the fixing end of substrate 100 and hanging actuating arm 12.
It describes in detail below to each component part of terahertz imaging array chip in the embodiment of the present disclosure.
In the present embodiment, substrate 100 is conductive silicon substrate, and conductivity range is between 0.1 Ω of Ω cm~100 cm
Between.
The size for the terahertz imaging array chip that the disclosure proposes is between 30 μm~300 μm, pixel in the chip
Specific size depending on the wave-length coverage of the Terahertz of selection.We provide the determination method of Pixel Dimensions.Due to terahertz
Wave-length coverage hereby is 30 μm~3mm, and according to Ruili criterion, the minimum spacing of two picture points is that (wherein, λ is light to d=1.22 λ F
Wavelength, F be imaging system aperture).Can be learnt by the minimum spacing formula of two picture points: selection large aperture can be improved
The resolution ratio of object, such as F1.0.Assuming that Terahertz ray of the wavelength selected for 0.3mm, two pictures obtained according to Ruili criterion
The minimum spacing d of point is 370 μm.Pixel Dimensions can be smaller again in practical applications, then passes through optical compensation or rear place
The optimization that the mode of reason is imaged, but Pixel Dimensions cannot be too small, will cause the waste of pixel in this way.
Referring to shown in Fig. 2, in the present embodiment, which includes two groups of hanging actuating arms 12, and every group
Hanging actuating arm includes two L-shaped structures, is divided into interior L-shaped structure and outer L-shaped structure, is fixed on silicon lining by respective fixing end
On bottom；The interior L-shaped structure and outer L-shaped structure of every group of hanging structure are far from being that U-shaped connects between the two-arm of fixing end；The two L
Shape structure includes subsurface material, also includes upper layer of material on subsurface material in that two-arm close to fixing end, and on
Layer material has higher thermal expansion coefficient than subsurface material.
In the present embodiment, actuating arm subsurface material 121 is silica, silicon nitride or silicon oxynitride, actuating arm upper layer of material
122 be metal material, aluminium, copper etc., but the disclosure is not limited to this, as long as the coefficient of expansion of actuating arm upper layer of material is greater than
The coefficient of expansion of subsurface material.
Further include a groove structure 123 below hanging actuating arm 11 referring to Fig.1 shown in A, this groove structure be for
Increase the mechanical strength of actuating arm.From the point of view of Figure 1A and Fig. 2, two groups of drivings in the groove structure schematic diagram 2 in Figure 1A
The groove structure of double L-shaped structure subsurface materials in arm.
Referring to Fig.1 shown in A, Terahertz absorbent layer structure plate 11 includes: lower protective layer 111 from bottom to top, and Terahertz absorbs
Layer 112, optical reflecting layer 113, structure sheaf 114 and up-protective layer 115；Wherein, lower protective layer 111 can make Terahertz saturating
It crosses, the material of Terahertz absorbed layer 112 includes but is not limited to one or more of following material: Ti, TiN, TiW, TiWN or W
Deng can also be that other play the material of heat-absorbing action；Optical reflecting layer 113 is the reflecting layer of laser, higher using flatness,
Metallic film with larger reflection coefficient, such as Ag, Al or metallic compound, such as AlSiCu, AlCu, structure sheaf 114 are
Nitride or oxide, the thickness of structure sheaf 114 is between 1 μm~10 μm in the present embodiment；The material of up-protective layer 115
It include: silica, silicon nitride or silicon oxynitride etc..
It should be noted that Figure 1A and Figure 1B is to illustrate structure and connection relationship, the shape and size of various pieces are simultaneously
Non- attached drawing is limited, in single pixel structure figure of terahertz imaging array chip shown in Fig. 2, the L of two groups of hanging actuating arms
Shape structure is upturned, will below mainly due to the hanging structure of actuating arm in order to obtain in chip fabrication process
Sacrificial layer removal process in, produce stress, so as to cause warpage, do not influence the structure and connection relationship of the disclosure.
Below come introduce the disclosure terahertz imaging array chip working principle: referring to Fig.1 shown in B, work as Terahertz
Radiation exposure is to object, and the Terahertz ray for being reflected or being transmitted is incident on the terahertz imaging array chip, Tu1BZhong
Black arrow indicate Terahertz ray be incident to Terahertz absorbed layer, in Terahertz chip, most of Terahertz ray quilt
Terahertz absorbed layer in Terahertz absorbent layer structure plate absorbs, and then is converted into heat, and heat is reached by heat exchange pattern
The hanging actuating arm 12 of 11 two sides of Terahertz absorbent layer structure plate.Since hanging actuating arm has the two of different heat expansion coefficient
Kind material layer, usual upper layer are metallics, and lower layer is oxide, nitride or the nitrogen oxides of silicon, after temperature raising, are hanged
Empty arm upper layer of material has the higher coefficient of expansion than hanging arm subsurface material, therefore can have bigger development length, so that
Brachiocylloosis is driven, to drive Terahertz absorbent layer structure plate to rotate, then by measuring the Terahertz absorbent layer structure plate
Angle or lateral displacement are rotated, the intensity of incident Terahertz ray can be obtained.
Referring to shown in Fig. 2, after Terahertz irradiation, Terahertz absorbent layer structure plate temperature is increased, and temperature heat transfer is to every group
The long arm end of the interior L-shaped structure of actuating arm causes interior in long arm end due to there is the double layer material with different heat expansion coefficient
L row structural bending, the rotation of driving structure plate.And due to the presence of the hot cooling structure in the U-shaped junction of two L-shaped structures, outer L
The temperature of shape remains unchanged, and does not generate bending.
Below with reference to the structure of terahertz imaging array chip as shown in Figure 2, to illustrate the terahertz imaging array core
The temperature compensation function that piece itself has.In the present embodiment, from the point of view of in conjunction with Fig. 2, after ambient temperature variation, each group outstanding
The internal layer and outer layer L-shaped structure of empty actuating arm can generate identical bending angle, ensure that the free end of actuating arm in this way
Relative displacement is not generated with the node of Terahertz absorbent layer structure plate, eliminates influence of the ambient temperature variation to the chip.
In second exemplary embodiment of the disclosure, a kind of production side of terahertz imaging array chip is provided
Method.
Fig. 3 is the production method flow chart according to one embodiment terahertz imaging array chip of the disclosure.Fig. 4 is according to this
One embodiment is disclosed using the process schematic of silicon face processing technology production terahertz imaging array chip；Wherein, (a) is the
Photoetching glue victim layer it is graphical；It (b) is the graphical of second of photoetching glue victim layer；It (c) is to be sequentially depositing lower protection
Layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf；It (d) is the upper surface for being etched to photoetching glue victim layer；(e) for
Up-protective layer is deposited on structure sheaf；Actuating arm lower layer and upper layer of material are deposited in photoetching glue victim layer upper surface, and by upper layer material
Material is graphical；It (f) is the graphical of actuating arm subsurface material；(g) it is removal photoetching glue victim layer, forms actuating arm and Terahertz
The hanging structure of absorbent layer structure plate.
From the point of view of Fig. 3 and Fig. 4, the production method of the terahertz imaging array chip of the disclosure, comprising:
Step S302: making photoetching glue victim layer on substrate and carries out photoetching, forms the gap for being used as fixed structure；
In the present embodiment, substrate is double section silicon wafers, and conductivity range is between 0.1 Ω of Ω cm~100 cm.
Plasma enhanced chemical vapor deposition technology (Plasma Enhanced Chemical Vapor is utilized in substrate face
Deposition, PECVD) one layer of nitride or oxide are deposited as laser anti-reflexion layer, thickness is less than 100nm, tool
Body thickness should be according to the case where film and depending on the wavelength of the laser of selection.
Then photoetching is carried out in substrate, is dried by whirl coating, photoetching, development and the UV to photoresist, makes photoetching
Glue sacrificial layer forms the gap for being used as fixed structure, and in Fig. 4 shown in (a), the white space of left is actuating arm and silicon wafer
Contact portion, the as shape of fixed structure, for depositing the material of corresponding fixed structure later.
Step S304: carrying out second of photoetching in the structure after a photoetching, and it is bigger to form a width in gap
Shallow grooves form a groove structure in the close position of the shallow grooves；
In the present embodiment, whirl coating, photoetching, development and the UV baking step for carrying out second of photoresist form shallow grooves, such as
In Fig. 4 shown in (b), the effect of shallow grooves and a groove structure is to increase actuating arm below and pass through the post-depositional machinery of film
Intensity.
It should be noted that the setting in step S304 about shallow grooves and a groove structure, only improves mechanical strength
A preferably technical solution.
In the present embodiment, the overall thickness of two layer photoresists is 2~10 μm.
Step S306: Terahertz absorbent layer structure plate is made in the structure after photoetching；
In the present embodiment, Terahertz absorbent layer structure plate is made in the way of chemical vapor deposition or physical vapour deposition (PVD)
11。
In the present embodiment, step S306 includes:
Lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf are sequentially depositing in structure after photoetching；Etching
Fall lower protective layer, Terahertz absorbed layer, optical reflecting layer and the structure sheaf of two side portions to photoetching glue victim layer upper surface；And
Up-protective layer is deposited on structure sheaf after etching.
The film being sequentially depositing from the bottom up first is respectively as follows: lower protective layer 111, Terahertz absorbed layer 112, optical reflection
Layer 113 and structure sheaf 114.Wherein, the thickness of lower protective layer 111 is less than 200nm, and the selection of thickness is with can utmostly thoroughly
Crossing Terahertz is standard, and material can be the insulating materials of silicon oxide or silicon nitride etc.；What Terahertz absorbed layer 112 used
Material includes but is not limited to: Ti, TiN, TiW, TiWN or W etc.；Optical reflecting layer 113 is laser reflection layer, the reflecting layer of laser
It should select that flatness is higher, metallic film with larger reflection coefficient, such as Ag, Al or belong to compound such as AlSiCu, AlCu
Deng；Structure sheaf 114 is nitride, oxide or nitrogen oxides, with a thickness of 1~10 μm.Wherein, lower protective layer covers all light
Photoresist sacrificial layer, and it is filled with the gap as fixed structure, referring to shown in (c) in Fig. 4；Then reactive ion etching is used
(Reactive Ion Etching, RIE) to the photoresist surface being hardened, as a result (d) is shown such as in Fig. 4, on structure sheaf
Up-protective layer is deposited, obtains Terahertz absorbent layer structure plate, (e's) absorbs about Terahertz in post-depositional result reference Fig. 4
The signal of layer structural slab.In the present embodiment, the material of up-protective layer is silica, silicon nitride or silicon oxynitride, and thickness is less than
50nm。
Step S308: actuating arm subsurface material, driving are successively deposited in the two sides of obtained Terahertz absorbent layer structure plate
Arm upper layer of material, and graphical treatment is carried out, make the double-deck driving arm configuration；
In the present embodiment, in photoetching glue victim layer upper surface, the actuating arm subsurface material of deposition is silicon oxide or silicon nitride,
The actuating arm upper layer of material of deposition is the metals such as Al, Cu, and graphically actuating arm upper layer of material, in Fig. 4 shown in (e), so
Graphical actuating arm subsurface material afterwards, to form the complete double-deck driving arm configuration, in Fig. 4 shown in (f).
Step S310: removal photoetching glue victim layer forms the hanging structure of actuating arm and Terahertz absorbent layer structure plate, complete
At the production of terahertz imaging array chip.
In the present embodiment, the intermediate photoetching glue victim layer of removal is etched using high-energy oxygen plasma, to form driving
The hanging structure of arm and Terahertz absorbent layer structure plate, in Fig. 4 shown in (g).
The structure of the terahertz imaging array chip that the present embodiment prepares meets: Terahertz ray from the chip too
Silicon substrate, which is passed through, below hertz absorbent layer structure plate is incident to Terahertz absorbed layer.
It should be noted that the step of depositing up-protective layer in step S306, on structure sheaf after etching can also tie
Conjunction is implemented together in step S308, i.e., deposits up-protective layer on the structure sheaf of etching；It is heavy in photoetching glue victim layer upper surface
Product actuating arm lower layer and upper layer of material, and carry out graphical treatment.
Fig. 5 is the image that the terahertz imaging array chip of MEMS technology production is processed based on surface, wherein (a) is light
Optical microscope image before the removal of photoresist sacrificial layer；It (b) is the SEM image after photoetching glue victim layer removal.
Referring to (a), (b) in Fig. 5 it is found that processing the every of the terahertz imaging array chip of MEMS technology production based on surface
A imaging unit includes the Terahertz absorbent layer structure plate at center and four hanging actuating arms of two sides, these imaging units according to
Pixel equidistantly arranges.By the size of the terahertz imaging array chip of production compared with one 10 cents of coin,
Size is suitable with coin, or even the size of also less than coin.
In the third exemplary embodiment of the disclosure, the production side of another terahertz imaging array chip is provided
Method.
Fig. 6 is the production method flow chart according to another embodiment terahertz imaging array chip of the disclosure.According to Fig. 7
Another embodiment of the disclosure combines production terahertz imaging array chip using silicon face processing technology and Bulk micro machining
Process schematic；Wherein, (a) is to make a groove structure to the graphical of soi wafer upper layer of silicon；(b) for using reactive ion
Etching method and photoetching process etch sacrificial silicon layer, etch the gap of fixed structure；It (c) is to be sequentially depositing lower protective layer, Terahertz
Absorbed layer, optical reflecting layer and structure sheaf；It (d) is the upper surface for being etched to sacrificial silicon layer；It (e) is to be deposited on structure sheaf
Protective layer；Actuating arm lower layer and upper layer of material are deposited in sacrificial silicon layer upper surface, and upper layer of material is graphical；It (f) is driving
Arm subsurface material it is graphical；(g) to carry out deep silicon etching from substrate back, XF is then used2Gas etching falls sacrificial silicon layer,
Form the hanging structure of actuating arm and Terahertz absorbent layer structure plate, the substrate part band opposite with Terahertz absorbent layer structure plate
There is Terahertz incident window.
From the point of view of Fig. 6 and Fig. 7, the production method of the terahertz imaging array chip of the disclosure, comprising:
Step S602: lithography and etching is carried out to the sacrificial silicon layer on substrate, forms the gap and one for being used as fixed structure
Groove structure；
In the present embodiment, substrate is double section SOI (Silicon on Insulator) silicon wafers, and upper layer of silicon is as sacrifice
Layer, thickness is between 2 μm~10 μm.
Plasma enhanced chemical vapor deposition technology (Plasma Enhanced Chemical is utilized in substrate face
Vapor Deposition, PECVD) one layer of nitride or oxide are deposited as laser anti-reflexion layer, thickness is less than
100nm, specific thickness should be according to the case where film and depending on the wavelength of the laser of selection.
Then the fixed structure between hanging actuating arm and substrate is made in the way of photoetching and reactive ion etching, and
A groove structure is made, to increase the mechanical strength of actuating arm.In the present embodiment, photoetching is carried out on soi wafer, it will
The upper surface silicon etching of soi wafer goes out shape, makes sacrificial silicon layer, forms the gap for being used as fixed structure, (a) institute in Fig. 7
Show, white space therein is a groove structure, and the effect of the groove structure is heavy by film in order to increase actuating arm below
Mechanical strength after product.Then in conjunction with photoetching and reactive ion etching, it is etched on the silica buried oxide layer of soi wafer,
Etching depth is 1 μm~2 μm or so, cannot be etched into silica buried oxide layer, in Fig. 7 shown in (b), the blank in left
Region is the contact portion of actuating arm and substrate, the as shape of fixed structure, for depositing corresponding fixed structure later
Material.
In the present embodiment, the overall thickness of two layer photoresists is 2~10 μm.
Step S604: Terahertz absorbent layer structure plate is made in structure after etching；
In the present embodiment, Terahertz absorbent layer structure plate is made in the way of chemical vapor deposition or physical vapour deposition (PVD)
11。
In the present embodiment, step S604 includes:
Lower protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf are sequentially depositing in structure after etching；Etching
Fall lower protective layer, Terahertz absorbed layer, optical reflecting layer and the structure sheaf of two side portions to the upper surface of sacrificial silicon layer；And
Up-protective layer is deposited on structure sheaf after etching.
The film being sequentially depositing from the bottom up first is respectively as follows: lower protective layer 111, Terahertz absorbed layer 112, optical reflection
Layer 113 and structure sheaf 114.Wherein, the thickness of lower protective layer 111 is less than 200nm, and the selection of thickness is with can utmostly thoroughly
Crossing Terahertz is standard, and material can be but be not limited to the insulating materials such as silicon oxide or silicon nitride；Terahertz absorbed layer 112 uses
Material include but is not limited to: Ti, TiN, TiW, TiWN or W etc.；Optical reflecting layer 113 is laser reflection layer, the reflection of laser
Layer should select that flatness is higher, metallic film with larger reflection coefficient, such as Ag, Al or belong to compound such as AlSiCu etc.；
Structure sheaf 114 is nitride or oxide, with a thickness of 1~4 μm.Wherein, lower protective layer covers all sacrificial silicon layer, and fills out
The gap as fixed structure is filled, referring to shown in (c) in Fig. 7；Then reactive ion etching (Reactive Ion is used
Etching, RIE) up-protective layer is deposited on structure sheaf, is obtained too as a result as shown in (d) in Fig. 7 to the surface of sacrificial silicon layer
Hertz absorbent layer structure plate, signal about Terahertz absorbent layer structure plate of the post-depositional result referring to (e) in Fig. 7.This reality
It applies in example, the material of up-protective layer is silicon oxide or silicon nitride, and thickness is less than 50nm.
Step S606: actuating arm subsurface material, driving are successively deposited in the two sides of obtained Terahertz absorbent layer structure plate
Arm upper layer of material, and graphical treatment is carried out, make the double-deck driving arm configuration；
In the present embodiment, in sacrificial silicon layer upper surface, the actuating arm subsurface material of deposition is silicon oxide or silicon nitride, deposition
Actuating arm upper layer of material be the metals such as Al, Cu, and graphical actuating arm upper layer of material is then schemed in Fig. 7 shown in (e)
Shape actuating arm subsurface material, to form the complete double-deck driving arm configuration, in Fig. 7 shown in (f).
Step S608: removal sacrificial silicon layer and Terahertz absorbent layer structure plate face part substrate, formed actuating arm and
The hanging structure of Terahertz absorbent layer structure plate completes the production of terahertz imaging array chip.
It in the present embodiment, is patterned at the soi wafer back side, the substrate in Terahertz absorbent layer structure plate face part
One Terahertz incident window of upper opening is etched to silica buried oxide layer using deep silicon etching technology, and using RIE removal two
Silica uses XF later2Gas isotropic etching falls sacrificial silicon layer, to form actuating arm and Terahertz absorbent layer structure
The hanging structure of plate, in Fig. 7 shown in (g).
The structure for the terahertz imaging array chip that the present embodiment prepares meets: Terahertz ray enters across Terahertz
Window is penetrated, is incident to Terahertz absorbed layer directly below from the Terahertz absorbent layer structure plate of the chip.
It should be noted that the step of depositing up-protective layer in step S604, on structure sheaf after etching can also tie
Conjunction is implemented together in step S606, i.e., deposits up-protective layer on structure sheaf after etching；It is deposited in sacrificial silicon layer upper surface
Actuating arm lower layer and upper layer of material, and carry out graphical treatment.
It is comprehensively compared the system in second embodiment and third embodiment about terahertz imaging array chip below
Make method: for from preparation process, production method shown in third embodiment is more direct and simple；Using second reality
It applies method shown in example and carries out production terahertz imaging array chip, need that suitable photoresist or other operation materials is selected to make
For sacrificial layer material, which needs to keep the stabilization of physics, chemical property, technique phase in subsequent processing technology
To more complex；And it uses method shown in second embodiment to carry out production terahertz imaging array chip and directly selects SOI
Silicon wafer and deep silicon etching technique directly adopt the upper silicon layer of soi wafer as sacrificial layer, do not need selection photoresist or other works
Make substance as sacrificial layer material, technique is more relatively easy；For from cost of manufacture, due to deep silicon etching and SOI substrate
It compares with for silicon face processing technology and silicon substrate, cost is higher, therefore production method cost shown in second embodiment
It is lower；In terms of Vacuum Package, production method shown in second embodiment does not open Terahertz entrance window on a silicon substrate
Mouthful, therefore Vacuum Package can be carried out using the anode linkage mode of glass and silicon, the encapsulation is relatively simple；It is real using third
Production method shown in example is applied, since the upper and lower faces of chip require to be bonded with glass, encapsulation is complex,
It is contemplated that inert gas such as Ne, He appropriate is added in encapsulation process, increase certain damping force, to prevent structural slab
Periodic vibration.
In the 4th exemplary embodiment of the disclosure, a kind of terahertz imaging system is provided.
Fig. 8 is the structural schematic diagram according to embodiment of the present disclosure terahertz imaging system.
Referring to shown in Fig. 8, the terahertz imaging system of the disclosure, comprising: terahertz imaging array chip, by Terahertz at
As unit is equidistantly arranged according to pixel, which includes: substrate 100；Terahertz absorbent layer structure plate 11,
Above substrate, there are distances between substrate；Hanging actuating arm 12, positioned at the two sides of Terahertz absorbent layer structure plate 11,
Wherein one end is fixed, and one end is hanging, and hanging side is fixed with Terahertz absorbent layer structure plate, including two layers of different coefficient of expansion
Material；And fixed structure 13, connect the fixing end of substrate 100 and hanging actuating arm 12；One laser, is placed in Terahertz
The oblique upper of imaging array chip emits laser to the terahertz imaging array chip, and by the terahertz imaging array chip
Carry out the reflection of laser；The laser of reflection is focused by one lens；And a ccd array, it is placed in the imaging of reflection laser
In plane, reception is reflected by terahertz imaging array chip and by the laser of lens focus.
In the present embodiment, hot spot of the laser on terahertz imaging array chip of laser transmitting be greater than Terahertz at
As the gross area of array chip, so that the imaging system detects the heat absorption situation of all Terahertz chip pixel units.
Introduce the working principle of the terahertz imaging system below with reference to Fig. 8: Terahertz is from terahertz imaging chip
Bottom is incident, causes the rotation of Terahertz absorbent layer structure plate.One laser is placed on the oblique upper of terahertz imaging chip, to
The chip emission laser, hot spot of the laser on terahertz imaging chip are greater than the gross area of terahertz imaging chip.Reflection
Laser by lens be placed in imaging plane ccd array absorb.The incident intensity and Terahertz absorbed layer knot of CCD picture point
The rotation angle of structure plate is related.Therefore, each picture point of CCD corresponds to each picture point of terahertz imaging array chip, passes through inspection
The incident intensity for surveying CCD picture point, can directly obtain terahertz image.
The CCD optical signalling acquisition system of the detection system uses commercial system, eliminates the professional Terahertz of production and reads
The complicated manufacturing process of sense circuit, structure is simple, easy to use.
In conclusion the embodiment of the present disclosure provides a kind of structure of terahertz imaging array chip, pass through tectonic forcing
The hanging structure of arm and Terahertz absorbent layer structure plate, and actuating arm is made using the thermotropic flexible principle of two temperature sensitivity piece, often
Group actuating arm includes two L-shaped structures, which includes upper layer metal material and subsurface material (oxide or nitride),
And upper layer of material has higher thermal expansion coefficient than subsurface material；After ambient temperature variation, the internal layer of every group of actuating arm
Identical bending angle can be generated with outer layer L-shaped structure so that actuating arm distal end with the node of Terahertz absorbent layer structure plate not
Relative displacement is generated, influence of the ambient temperature variation to device has been effectively removed, so that the terahertz imaging array chip has
Automatic temperature compensation function；Two kinds of production methods of terahertz imaging array chip are additionally provided, and provide one kind too
Hertz imaging system, directly builds imaging system by using laser and CCD optical signalling acquisition system and is imaged, eliminated
With integrating for output circuit, structure is simple, and cost is relatively low.
It should be noted that the direction term mentioned in embodiment, such as "upper", "lower", "front", "rear", "left", "right"
Deng being only the direction with reference to attached drawing, not be used to limit the protection scope of the disclosure.Through attached drawing, identical element is by identical
Or similar appended drawing reference indicates.When may cause understanding of this disclosure and cause to obscure, conventional structure or structure will be omitted
It makes.And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the content of the embodiment of the present disclosure.
In addition, in the claims, any reference symbol between parentheses should not be configured to limitations on claims.Again
Person, word "comprising" or " comprising " do not exclude the presence of element or step not listed in the claims.List located in front of the element
Word "a" or "an" does not exclude the presence of multiple such elements.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in the above institute for the sequence of above-mentioned steps
Column, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, that
This mix and match is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be freely combined
Form more embodiments.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (9)
1. a kind of terahertz imaging array chip is equidistantly arranged by terahertz imaging unit according to pixel, the Terahertz at
As unit includes:
Substrate；
Terahertz absorbent layer structure plate is located above substrate, and there are distances between substrate；
Hanging actuating arm, positioned at the two sides of Terahertz absorbent layer structure plate, wherein one end is fixed, and one end is hanging, hanging side
It is fixed with Terahertz absorbent layer structure plate, the material including two layers of different coefficient of expansion；And
Fixed structure connects the fixing end of substrate and hanging actuating arm；
Wherein, the hanging actuating arm is two groups, and every group of hanging actuating arm includes two L-shaped structures, is divided into interior L-shaped structure and outer
L-shaped structure, it is fixed on substrate by respective fixing end respectively；The interior L-shaped structure and outer L-shaped structure of every group of hanging structure are remote
It is connected between the two-arm of fixing end for U-shaped；The two L-shaped structures include subsurface material, in that two-arm close to fixing end
On, it also include upper layer of material on subsurface material, and upper layer of material has higher thermal expansion coefficient than subsurface material.
2. terahertz imaging array chip according to claim 1, wherein the Terahertz absorbent layer structure plate from lower and
On include: lower protective layer, Terahertz absorbed layer, optical reflecting layer, structure sheaf and up-protective layer.
3. terahertz imaging array chip according to claim 2, in which:
The lower protective layer can be such that Terahertz penetrates；And/or
The material of the Terahertz absorbed layer includes one or more of following material: Ti, TiN, TiW, TiWN or W；And/or
The optical reflecting layer is one or more of the reflecting layer, including following material of laser: metal, comprising: Ag, Al；
Or metallic compound, comprising: AlSiCu, AlCu；And/or
The material of the structure sheaf includes: nitride, oxide or nitrogen oxides；And/or
The thickness of the structure sheaf is between 1 μm~10 μm.
4. terahertz imaging array chip according to claim 1, the size of the terahertz imaging array chip between
Between 30 μm~300 μm.
5. a kind of production method of terahertz imaging array chip, comprising:
Photoetching glue victim layer is made on a silicon substrate and carries out first time photoetching, forms the gap for being used as fixed structure；
Second of photoetching is carried out in the structure after first time photoetching, the bigger shallow grooves of a width is formed in gap, at this
The close position of shallow grooves forms a groove structure；
Terahertz absorbent layer structure plate is made in structure after second of photoetching；
Actuating arm subsurface material, actuating arm upper layer of material are successively deposited in the two sides of obtained Terahertz absorbent layer structure plate, and
It is patterned processing, makes the double-deck driving arm configuration, bilayer driving arm configuration includes the material of two layers of different coefficient of expansion；
And
Photoetching glue victim layer is removed, forms hanging actuating arm and between substrate there are the Terahertz absorbent layer structure plate of distance,
Complete the production of terahertz imaging array chip；
Wherein, the hanging actuating arm is two groups, and every group of hanging actuating arm includes two L-shaped structures, is divided into interior L-shaped structure and outer
L-shaped structure, it is fixed on substrate by respective fixing end respectively；The interior L-shaped structure and outer L-shaped structure of every group of hanging structure are remote
It is connected between the two-arm of fixing end for U-shaped；The two L-shaped structures include subsurface material, in that two-arm close to fixing end
On, it also include upper layer of material on subsurface material, and upper layer of material has higher thermal expansion coefficient than subsurface material.
6. a kind of production method of terahertz imaging array chip, comprising:
Lithography and etching is carried out to the sacrificial silicon layer on soi wafer substrate, forms the gap for being used as fixed structure and a groove knot
Structure；
Terahertz absorbent layer structure plate is made in structure after etching；
Actuating arm subsurface material, actuating arm upper layer of material are successively deposited in the two sides of obtained Terahertz absorbent layer structure plate, and
It is patterned processing, makes the double-deck driving arm configuration, bilayer driving arm configuration includes the material of two layers of different coefficient of expansion；
And
The substrate for removing sacrificial silicon layer and Terahertz absorbent layer structure plate face part, forms hanging actuating arm and between substrate
There are the Terahertz absorbent layer structure plates of distance, complete the production of terahertz imaging array chip；
Wherein, the hanging actuating arm is two groups, and every group of hanging actuating arm includes two L-shaped structures, is divided into interior L-shaped structure and outer
L-shaped structure, it is fixed on substrate by respective fixing end respectively；The interior L-shaped structure and outer L-shaped structure of every group of hanging structure are remote
It is connected between the two-arm of fixing end for U-shaped；The two L-shaped structures include subsurface material, in that two-arm close to fixing end
On, it also include upper layer of material on subsurface material, and upper layer of material has higher thermal expansion coefficient than subsurface material.
7. production method according to claim 5 or 6, in which:
Production Terahertz absorbent layer structure plate includes: under being sequentially depositing in the structure after photoetching in the structure after photoetching
Protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf；Etch away the lower protective layers of two side portions, Terahertz absorbed layer,
Optical reflecting layer and structure sheaf are to photoetching glue victim layer upper surface；And up-protective layer is deposited on structure sheaf after etching；
Production Terahertz absorbent layer structure plate includes: to be sequentially depositing down in structure after etching in the structure after etching
Protective layer, Terahertz absorbed layer, optical reflecting layer and structure sheaf；Etch away the lower protective layers of two side portions, Terahertz absorbed layer,
Optical reflecting layer and structure sheaf are to the upper surface of sacrificial silicon layer；And up-protective layer is deposited on structure sheaf after etching.
8. a kind of terahertz imaging system, comprising:
The described in any item terahertz imaging array chips of Claims 1-4；
One laser is placed in the oblique upper of terahertz imaging array chip, emits laser to the terahertz imaging array chip,
And the reflection of laser is carried out by the terahertz imaging array chip；
The laser of reflection is focused by one lens；And
One ccd array, is placed on the imaging plane of reflection laser, and reception is reflected by terahertz imaging array chip and by lens
The laser of focusing.
9. imaging system according to claim 8, Terahertz is incident from the bottom of the terahertz imaging array chip, draws
Play the rotation of Terahertz absorbent layer structure plate；Each picture point of the ccd array corresponds to the every of terahertz imaging array chip
A picture point obtains terahertz image by detecting the incident intensity of CCD picture point.
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| CN104916920B (en) * | 2015-05-29 | 2018-04-06 | 上海交通大学 | The THz wave Meta Materials of double frequency-band continuously adjustabe based on thermal drivers |
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