CN104198051A - Multiband infrared metamaterial wave absorber - Google Patents
Multiband infrared metamaterial wave absorber Download PDFInfo
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- CN104198051A CN104198051A CN201410477247.2A CN201410477247A CN104198051A CN 104198051 A CN104198051 A CN 104198051A CN 201410477247 A CN201410477247 A CN 201410477247A CN 104198051 A CN104198051 A CN 104198051A
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Abstract
The invention discloses a multiband infrared metamaterial wave absorber, belongs to the technical field of multiband infrared metamaterial wave absorbers and solves the problem that high absorption of electromagnetic waves is only realized in a single band. The multiband infrared metamaterial wave absorber comprises a plurality of absorber units, each absorber unit comprises a base layer, a metal layer, a medium layer and a sub-wavelength metal structure sequentially from bottom to top, the sub-wavelength metal structure is composed of two 'L'-shaped structures same in size, the sides of the 'L'-shaped structures are parallel to the sides of the absorber units correspondingly, and diagonal lines of the 'L'-shaped structures are in axial symmetry along the wave absorber units; the arm length of each 'L'-shaped structure ranges from 0.5 micrometer to 1 micrometer, and the arm width ranges from 0.1 micrometer to 0.3 micrometer. The multiband infrared metal material wave absorber is used for high absorption of electromagnetic waves of three bands of the infrared waveband.
Description
Technical field
An infrared excess material wave-absorber for multiband, for electromagnetic high absorption of three frequency bands of infrared band, belongs to the infrared excess material wave-absorber technical field of multiband.
Background technology
The key of preparing high performance infrared eye is mainly high performance infrared absorbing material.Infrared absorbing material refers to that a certain frequency range of infrared light region or certain several frequency range are had to the strong specific function material absorbing.Traditional infrared absorbing material is mainly to utilize the energy level transition of material to absorb, and electromagnetic energy is changed into the potential energy of material internal, and as molecular potential, electronic potential etc., its conversion efficiency can be subject to the restriction of material, the infrared absorption that very difficult realization is higher.But, along with the appearance of super material, for absorbing material has been opened up a new developing direction.Due to the electromagnetic property of super material uniqueness, the novel electromagnetic absorption structure of making based on super material, i.e. super material wave-absorber, can realize electromagnetic almost Perfect is absorbed.
Super material, as a kind of new artificial electromagnetic material, in recent years, enjoys scientific research personnel's concern and makes some progress.Super material is to have the artificial composite structure of the not available extraordinary physical property of natural medium or the general designation of Composite Media, and its physical characteristics does not depend on the intrinsic performance of materials chemistry component, but depends on the ad hoc structure of super material internal.In the time of itself and electromagnetic wave phase interaction, tend to produce the physical characteristics that fabulous, nature or chemical synthetic material cannot obtain.Therefore, it has many special application, as perfect wave-absorber, perfect lens, negative refraction etc.Super material wave-absorber, as one of application of super material, due to its good performance, is therefore with a wide range of applications on selective thermal transmitter, thermo-optical volt, hot bolometer, sensor device.Since the people such as N.I.Landy experimental verification for the first time after the perfect wave-absorber of super material, super material wave-absorber has been obtained fast and has been developed, service band has extended to THz wave band from radio-frequency range gradually, infrared band is visible light wave range even.
Due to, the electromagnetic property of super material wave-absorber uniqueness, makes it be easy to realize high absorption at a certain frequency band.At present, researchist has proposed the infrared excess material wave-absorber of many different structures, but they are more in some single frequency bands, to realize electromagnetic high absorption, and the infrared excess material wave-absorber of multiband seldom proposes.Realize at present the array being formed by multiple single-frequency absorbing structure parallel arranged that mainly adopts of wave-absorber structure that multiband absorbs, although can realizing multiband, this method absorbs, but increase the complexity of structure, process technology is had higher requirement, and the absorptivity of each frequency band is difficult to realize high absorption simultaneously.
Summary of the invention
The present invention is directed to the deficiencies in the prior art part provides a kind of infrared excess material wave-absorber of multiband, solved can only single frequency band in electromagnetic high absorption problem, super material wave-absorber has been realized the characteristic at infrared band with three frequency bands, high absorption.
To achieve these goals, the technical solution used in the present invention is:
A kind of infrared excess material wave-absorber of multiband, it is characterized in that: super material wave-absorber is made up of multiple wave-absorbers unit, wave-absorber unit is made up of the metal construction of the substrate setting gradually from bottom to top, metal level, dielectric layer and sub-wavelength, the metal construction of described sub-wavelength is made up of two the same " L " type structures of size, the limit of " L " type structure is parallel to respectively the limit of corresponding wave-absorber unit, two " L " type structures along the diagonal line of wave-absorber unit axisymmetricly, the brachium of " L " type structure is 0.5 ~ 1 micron, and arm is wide is 0.1 ~ 0.3 micron.
As preferably, the transverse section of described each wave-absorber unit is square, and its length of side is 1.2 ~ 2 microns.
As preferably, the outer edge of described two " L " type structures and the distance on wave-absorber element sides edge are 0.1 ~ 0.3 micron.
As preferably, the thickness of the metal construction of described sub-wavelength is 0.1 ~ 0.3 micron.
As preferably, the thickness of described metal level is 0.05 ~ 0.4 micron, is made up of the one in gold, silver or aluminum metallic material.
As preferably, the thickness of described dielectric layer is 0.15 ~ 0.35 micron, is made up of a kind of infrared absorbing material in silicon, magnesium fluoride or aluminium oxide.
As preferably, the thickness of described substrate is 1 ~ 5000 micron, is made up of the one in silicon, monox or silica glass material.
Compared with prior art, the invention has the advantages that:
One, the present invention proposes a kind of new infrared excess material wave-absorber structure, this structure is made up of " metal-dielectric-metal " structure, wherein the metal construction of sub-wavelength is made up of the structure of two " L " types, two " L " type structures along the diagonal line of wave-absorber unit axisymmetricly, simple in structure, and be easy to realize.
Two, the infrared excess material wave-absorber structure that the present invention proposes, the height that can realize three frequency bands in the wavelength coverage of 4 ~ 11 microns absorbs, and absorptivity is up to more than 90%.
Brief description of the drawings
Fig. 1 is partial top view of the present invention;
Fig. 2 is the perspective view of wave-absorber of the present invention unit;
Fig. 3 is vertical view and the geometrical characteristic parameter thereof of wave-absorber of the present invention unit, and wherein D is the length of side of wave-absorber unit, and L and W are length and the width of two arms of " L " type structure, and X is the distance on the limit of " L " type structure and wave-absorber unit;
Fig. 4 is the absorption curve figure of embodiments of the invention 1;
Fig. 5 is the absorption curve figure of embodiments of the invention 2;
Fig. 6 is the absorption curve figure of embodiments of the invention 3;
In figure: the metal construction of 1-sub-wavelength, 2-dielectric layer, 3-metal level, 4-substrate.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further illustrated.
As shown in Figure 1, 2, a kind of infrared excess material wave-absorber of multiband, super material wave-absorber is made up of multiple wave-absorbers unit, wave-absorber unit is made up of the metal construction 1 of the substrate 4 setting gradually from bottom to top, metal level 3, dielectric layer 2 and sub-wavelength, the metal construction 1 of described sub-wavelength is made up of two " L " type structures, two " L " type structures are separated, and the size of two " L " type structures is just the same, and are parallel to the limit of corresponding wave-absorber unit.Along the diagonal line of wave-absorber unit axisymmetricly, the brachium of " L " type structure is 0.5 ~ 1 micron for two " L " type structures, and arm is wide is 0.1 ~ 0.3 micron.The transverse section of each wave-absorber unit is square, and its length of side is 1.2 ~ 2 microns.The outer edge of described two " L " type structures and the distance on wave-absorber element sides edge are 0.1 ~ 0.3 micron.The thickness of the metal construction 1 of described sub-wavelength is 0.1 ~ 0.3 micron.The thickness of described metal level 3 is 0.05 ~ 0.4 micron, is made up of the one in gold, silver or aluminum metallic material.The thickness of described dielectric layer 2 is 0.15 ~ 0.35 micron, is made up of the one in silicon, magnesium fluoride or aluminium oxide.The thickness of described substrate 4 is 1 ~ 5000 micron, is made up of the one in silicon, monox or silica glass material.
Embodiment 1:
The infrared excess material of each multiband is inhaled ripple unit and is formed by metal construction 1, dielectric layer 2, metal level 3 and the substrate 4 of sub-wavelength.The metal construction 1 of sub-wavelength is positioned at the top of whole wave-absorber unit, and substrate 4 is positioned at the bottom of whole wave-absorber unit, dielectric layer 2 be positioned at sub-wavelength metal construction 1 under, metal level 3 is between dielectric layer 2 and substrate 4.The transverse section of wave-absorber unit is square, and its length of side is 1.4 microns.The metal construction 1 of sub-wavelength and the material of metal level 3 are metallic aluminium, and its thickness is 0.1 micron.The metal construction 1 of sub-wavelength is made up of two the same " L " type structures of size, and is parallel to the limit of corresponding wave-absorber unit.Two " L " type structures along the diagonal line of wave-absorber unit axisymmetricly, the length of its arm and width are respectively 0.8 micron and 0.2 micron, the symcenter of two " L " type structures is positioned at the center of dielectric layer, and the outer edge of two " L " type structures and the distance on wave-absorber element sides edge are 0.15 micron.The material of dielectric layer 2 is silicon, and its thickness is 0.22 micron.The material of substrate 4 is silicon, and its thickness is 1000 microns.By numerical simulation, obtain the absorption curve of this embodiment at infrared band, as shown in Figure 4.
Embodiment 2:
The infrared excess material of each multiband is inhaled ripple unit and is formed by metal construction 1, dielectric layer 2, metal level 3 and the substrate 4 of sub-wavelength.The metal construction 1 of sub-wavelength is positioned at the top one deck of whole wave-absorber unit, and substrate 4 is positioned at the bottom of whole wave-absorber unit, and dielectric layer 2 is positioned under the metal construction 1 of sub-wavelength, and metal level 3 is between dielectric layer 2 and substrate 4.The transverse section of wave-absorber unit is square, and its length of side is 1.4 microns.The metal construction 1 of sub-wavelength and the material of metal level 3 are metallic aluminium, and its thickness is 0.1 micron.The metal construction 1 of sub-wavelength is made up of two the same " L " type structures of size, and be parallel to the limit of corresponding wave-absorber unit, two " L " type structures along the diagonal line of wave-absorber unit axisymmetricly, the length of its arm and width are respectively 0.8 micron and 0.1 micron, the symcenter of two " L " type structures is positioned at the center of dielectric layer, and the outer edge of two " L " type structures and the distance on wave-absorber element sides edge are 0.15 micron.The material of dielectric layer 2 is silicon, and its thickness is 0.22 micron.The material of substrate 4 is silicon, and its thickness is 1000 microns.By numerical simulation, obtain the absorption curve of this embodiment at infrared band, as shown in Figure 5.
Embodiment 3:
The infrared excess material of each multiband is inhaled ripple unit and is made up of metal construction 1, dielectric layer 2, metal level 3 and the substrate 4 of sub-wavelength.The metal construction 1 of sub-wavelength is positioned at the top of whole wave-absorber unit, and substrate 4 is positioned at the bottom of whole wave-absorber unit, dielectric layer 2 be positioned at sub-wavelength metal construction 1 under, metal level 3 is between dielectric layer 2 and substrate 4.The transverse section of wave-absorber unit is square, and its length of side is 1.4 microns.The metal construction 1 of sub-wavelength is made up of two the same " L " type structures of size, and be parallel to the limit of corresponding wave-absorber unit, two " L " type structures along the diagonal line of wave-absorber unit axisymmetricly, the length of its arm and width are respectively 0.8 micron and 0.2 micron, the symcenter of two " L " type structures is positioned at the center of dielectric layer, and the outer edge of two " L " type structures and the distance on wave-absorber element sides edge are 0.15 micron.The metal construction 1 of sub-wavelength and the material of metal level 3 are metallic aluminium, and its thickness is 0.1 micron.The material of dielectric layer 2 is silicon, and its thickness is 0.2 micron.The material of substrate 4 is silicon, and its thickness is 1000 microns.By numerical simulation, obtain the absorption curve of this embodiment at infrared band, as shown in Figure 6.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment is only for giving an example and explanation, but not is intended to limit the invention in described scope of embodiments.In addition it will be appreciated by those skilled in the art that, the present invention is not limited to above-described embodiment, can also make more kinds of variants and modifications according to instruction of the present invention, and these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.
Claims (7)
1. the infrared excess material wave-absorber of a multiband, it is characterized in that: super material wave-absorber is made up of multiple wave-absorbers unit, wave-absorber unit is made up of the metal construction of the substrate setting gradually from bottom to top, metal level, dielectric layer and sub-wavelength, the metal construction of described sub-wavelength is made up of two the same " L " type structures of size, the limit of " L " type structure is parallel to respectively the limit of corresponding wave-absorber unit, two " L " type structures along the diagonal line of wave-absorber unit axisymmetricly, the brachium of " L " type structure is 0.5 ~ 1 micron, and arm is wide is 0.1 ~ 0.3 micron.
2. the infrared excess material wave-absorber of a kind of multiband according to claim 1, is characterized in that: the transverse section of described each wave-absorber unit is square, and its length of side is 1.2 ~ 2 microns.
3. according to the infrared excess material wave-absorber of a kind of multiband described in claim 1,2, it is characterized in that: the distance on described two " L " type structure outer edges and wave-absorber element sides edge is 0.1 ~ 0.3 micron.
4. the infrared excess material wave-absorber of a kind of multiband according to claim 3, is characterized in that: the thickness of the metal construction of described sub-wavelength is 0.1 ~ 0.3 micron.
5. the infrared excess material wave-absorber of a kind of multiband according to claim 1, is characterized in that: the thickness of described metal level is 0.05 ~ 0.4 micron, is made up of the one in gold, silver or aluminium.
6. the infrared excess material wave-absorber of a kind of multiband according to claim 1, is characterized in that: the thickness of described dielectric layer is 0.15 ~ 0.35 micron, is made up of a kind of infrared absorbing material in silicon, magnesium fluoride or aluminium oxide.
7. the infrared excess material wave-absorber of a kind of multiband according to claim 1, is characterized in that: the thickness of described substrate is 1 ~ 5000 micron, is made up of the one in silicon, monox or quartz glass.
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Cited By (12)
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| CN104538743A (en) * | 2014-12-27 | 2015-04-22 | 复旦大学 | Broadband THz wave plate composed of specific electromagnetic surface |
| CN104600434A (en) * | 2014-12-26 | 2015-05-06 | 上海大学 | Double-L-shaped chiral metamaterial micro-unit structure with asymmetric transmission feature |
| CN105549133A (en) * | 2015-12-09 | 2016-05-04 | 同济大学 | Near-infrared omnidirectional absorber based on hyperbolic specific material micro-cavity |
| CN105987757A (en) * | 2015-03-06 | 2016-10-05 | 中国科学院微电子研究所 | Terahertz focal plane array and detecting and imaging device |
| CN106767168A (en) * | 2017-01-11 | 2017-05-31 | 中国人民解放军空军工程大学 | A kind of selective radiation infrared stealth structure |
| CN105742826B (en) * | 2016-03-01 | 2018-10-19 | 重庆大学 | The asymmetric Meta Materials that can be absorbed near infrared band utilization method promise resonant check |
| CN109004369A (en) * | 2018-06-28 | 2018-12-14 | 中国人民解放军空军工程大学 | Reflection-type polarization based on frequency-selective surfaces backboard rotates super surface |
| CN109659704A (en) * | 2019-01-07 | 2019-04-19 | 内蒙古大学 | A kind of ultrabroad band wave absorbing device and its manufacturing method based on combination resonance structure |
| CN110459876A (en) * | 2019-08-29 | 2019-11-15 | 桂林电子科技大学 | A kind of ultra wide band wave-absorber based on two-dimentional simple metamaterial structure |
| CN110687064A (en) * | 2019-09-17 | 2020-01-14 | 中国科学院上海微***与信息技术研究所 | Infrared detector and infrared gas sensor |
| CN111490355A (en) * | 2020-03-23 | 2020-08-04 | 西安交通大学 | Terahertz chiral metamaterial wave absorber with flexible substrate and manufacturing method |
| CN111947788A (en) * | 2020-07-08 | 2020-11-17 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
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| CN103474727A (en) * | 2013-09-14 | 2013-12-25 | 电子科技大学 | Multi-layer metamaterial unit structure and preparation and regulation method thereof |
| CN103675961A (en) * | 2013-12-26 | 2014-03-26 | 哈尔滨工业大学 | Intermediate infrared double-frequency-band metamaterial absorber based on double-L structure |
| CN103984047A (en) * | 2014-05-30 | 2014-08-13 | 电子科技大学 | Infrared metamaterial wave absorbing body |
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| CN103259097A (en) * | 2013-04-19 | 2013-08-21 | 电子科技大学 | Terahertz metamaterial unit structure and preparation, adjusting and control method thereof |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600434A (en) * | 2014-12-26 | 2015-05-06 | 上海大学 | Double-L-shaped chiral metamaterial micro-unit structure with asymmetric transmission feature |
| CN104538743A (en) * | 2014-12-27 | 2015-04-22 | 复旦大学 | Broadband THz wave plate composed of specific electromagnetic surface |
| CN104538743B (en) * | 2014-12-27 | 2017-11-17 | 复旦大学 | A kind of wideband THz wave plates being made up of electromagnetism particular surface |
| CN105987757A (en) * | 2015-03-06 | 2016-10-05 | 中国科学院微电子研究所 | Terahertz focal plane array and detecting and imaging device |
| CN105987757B (en) * | 2015-03-06 | 2018-10-09 | 中国科学院微电子研究所 | Terahertz focal plane arrays (FPA) and detection and imaging device |
| CN105549133A (en) * | 2015-12-09 | 2016-05-04 | 同济大学 | Near-infrared omnidirectional absorber based on hyperbolic specific material micro-cavity |
| CN105549133B (en) * | 2015-12-09 | 2017-12-15 | 同济大学 | A kind of near-infrared omnidirectional absorber based on hyperbolic metamaterials microcavity |
| CN105742826B (en) * | 2016-03-01 | 2018-10-19 | 重庆大学 | The asymmetric Meta Materials that can be absorbed near infrared band utilization method promise resonant check |
| CN106767168A (en) * | 2017-01-11 | 2017-05-31 | 中国人民解放军空军工程大学 | A kind of selective radiation infrared stealth structure |
| CN109004369A (en) * | 2018-06-28 | 2018-12-14 | 中国人民解放军空军工程大学 | Reflection-type polarization based on frequency-selective surfaces backboard rotates super surface |
| CN109659704A (en) * | 2019-01-07 | 2019-04-19 | 内蒙古大学 | A kind of ultrabroad band wave absorbing device and its manufacturing method based on combination resonance structure |
| CN110459876A (en) * | 2019-08-29 | 2019-11-15 | 桂林电子科技大学 | A kind of ultra wide band wave-absorber based on two-dimentional simple metamaterial structure |
| CN110687064A (en) * | 2019-09-17 | 2020-01-14 | 中国科学院上海微***与信息技术研究所 | Infrared detector and infrared gas sensor |
| CN111490355A (en) * | 2020-03-23 | 2020-08-04 | 西安交通大学 | Terahertz chiral metamaterial wave absorber with flexible substrate and manufacturing method |
| CN111947788A (en) * | 2020-07-08 | 2020-11-17 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
| CN111947788B (en) * | 2020-07-08 | 2021-04-23 | 北京北方高业科技有限公司 | Infrared detector and preparation method thereof |
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