CN105845551B - 衬底处理***中用作硬掩模的无定形碳和硅膜的金属掺杂 - Google Patents
衬底处理***中用作硬掩模的无定形碳和硅膜的金属掺杂 Download PDFInfo
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 23
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- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims description 22
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 8
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- 239000011737 fluorine Substances 0.000 description 3
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- 239000000377 silicon dioxide Substances 0.000 description 1
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- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
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Abstract
本发明涉及衬底处理***中用作硬掩模的无定形碳和硅膜的金属掺杂。用于沉积金属掺杂的无定形碳硬掩模膜或金属掺杂的无定形硅硬掩模膜的***和方法包括:将衬底布置在处理室中;供给载气至所述处理室;供给烃前体气体或硅前体气体至所述处理室;供给基于金属的前体气体至所述处理室;使等离子体在所述处理室产生或供给等离子体到所述处理室中的一者;以及分别在所述衬底上沉积金属掺杂的无定形碳硬掩模膜或金属掺杂的无定形硅硬掩模膜。
Description
技术领域
本发明涉及衬底处理***和方法,并且更具体地涉及在衬底上沉积无定形碳硬掩模和无定形硅硬掩模的***和方法。
背景技术
这里提供的背景描述是为了总体呈现本公开的背景的目的。在此背景技术部分中描述的程度上的当前指定的发明人的工作,以及在提交申请时可能无法以其他方式有资格作为现有技术的说明书的各方面,既不明确也不暗示地承认是针对本公开的现有技术。
用于执行沉积和/或蚀刻的衬底处理***包括带有基座的处理室。例如半导体晶片之类的衬底可以被布置在基座上。例如在化学气相沉积(CVD)工艺中,包括一种或多种前体的气体混合物可被引入到处理室中以在衬底上沉积膜或蚀刻衬底。在一些衬底处理***中,等离子体可被用于激活化学反应,并在此被称为等离子体增强CVD(PECVD)。
无定形碳和硅膜可以用作硬掩模,以在衬底处理过程中蚀刻高深宽比特征。例如,在3D存储器应用中,硬掩模膜应是高蚀刻选择性的。其结果是,硬掩模膜应具有较高的模量、更致密以及更抗蚀刻化学品的粘接基质。在能够于打开工艺期间除去硬掩模膜和具有对电介质蚀刻工艺是高选择性的硬掩模膜之间取得平衡。
发明内容
一种用于沉积金属掺杂的无定形碳硬掩模膜的方法包括:将衬底布置在处理室中;供给载气至所述处理室;供给烃前体气体至所述处理室;供给基于金属的(metal-based)前体气体至所述处理室;使等离子体在所述处理室产生或供给等离子体到所述处理室中的一者;以及在所述衬底上沉积金属掺杂的无定形碳硬掩模膜。
在其它特征中,所述处理室包括等离子体增强化学气相沉积(PECVD)处理室。所述基于金属的前体气体包括金属卤化物前体气体。所述金属卤化物前体气体是选自由WFa、TiClb、WClc、HfCld和TaCle组成的群组,其中a、b、c、d和e为大于或等于1的整数。所述基于金属的前体气体包括四(二甲氨基)钛(TDMAT)前体气体。所述基于金属的前体气体包括双(叔丁基亚氨)-双-(二甲氨基)钨(BTBMW)前体气体。所述载气选自由氢分子(H2)、氩(Ar)、氮分子(N2)、氦(He)和/或它们的组合组成的群组。所述烃前体气体包括CxHy,其中x为2至10的整数,y为2至24的整数。所述烃前体气体选自由甲烷、乙炔、乙烯、丙烯、丁烷、环己烷、苯和甲苯组成的群组。所述基于金属的前体气体包括六氟化钨,所述烃前体气体包含甲烷,并且所述载气包括氢分子。
一种用于沉积金属掺杂的无定形硅硬掩模膜的方法包括:将衬底布置在处理室中;供给载气至所述处理室;供给硅前体气体至所述处理室;供给基于金属的前体气体至所述处理室;使等离子体在所述处理室产生或供给等离子体到所述处理室中的一者;以及在所述衬底上沉积金属掺杂的无定形硅硬掩模膜。
在其它特征中,所述处理室包括等离子体增强化学气相沉积(PECVD)处理室。所述基于金属的前体气体包括金属卤化物前体气体。所述金属卤化物前体气体是选自由WFa、TiClb、WClc、HfCld和TaCle组成的群组,其中a、b、c、d和e为大于或等于1的整数。所述基于金属的前体气体包括四(二甲氨基)钛(TDMAT)前体气体。所述基于金属的前体气体包括双(叔丁基亚氨)-双-(二甲氨基)钨(BTBMW)前体气体。所述载气选自由氢分子(H2)、氩(Ar)、氮分子(N2)、氦(He)和/或它们的组合组成的群组。所述硅前体气体选自由硅烷和原硅酸四乙酯组成的群组。
一种用于沉积金属掺杂的无定形碳硬掩模膜的衬底处理***包括:处理室,其包括被配置以支撑衬底的衬底支撑件。气体供给***被配置成选择性地供应处理气体至处理室。等离子体产生器被配置成选择性地供给所述处理室中的等离子体。控制器被配置成控制所述气体供给***和所述等离子体产生器并且被配置成:供给载气至所述处理室;供给烃前体气体至所述处理室;供给基于金属的前体气体至所述处理室;供给所述处理室中的等离子体;以及在所述衬底上沉积金属掺杂的无定形碳硬掩模膜。
在其它特征中,所述处理室包括等离子体增强化学气相沉积(PECVD)处理室。所述基于金属的前体气体包括金属卤化物前体气体。所述金属卤化物前体气体是选自由WFa、TiClb、WClc、HfCld和TaCle组成的群组,其中a、b、c、d和e为大于或等于1的整数。所述基于金属的前体气体包括四(二甲氨基)钛(TDMAT)前体气体。所述基于金属的前体气体包括双(叔丁基亚氨)-双-(二甲氨基)钨(BTBMW)前体气体。所述载气选自由氢分子(H2)、氩(Ar)、氮分子(N2)、氦(He)和/或它们的组合组成的群组。所述烃前体气体包括CxHy,其中x为2至10的整数,y为2至24的整数。所述烃前体气体选自由甲烷、乙炔、乙烯、丙烯、丁烷、环己烷、苯和甲苯组成的群组。所述基于金属的前体气体包括六氟化钨,所述烃前体气体包含甲烷,并且所述载气包括氢分子。
一种用于沉积金属掺杂的无定形硅硬掩模膜的衬底处理***包括:处理室,其包括被配置以支撑衬底的衬底支撑件;被配置成选择性地供应处理气体至处理室的气体供给***;被配置选择性地供给所述处理室中的等离子体的等离子体产生器;控制器,其被配置成控制所述气体供给***和所述等离子体产生器并且被配置成:供给载气至所述处理室;供给硅前体气体至所述处理室;供给基于金属的前体气体至所述处理室;供给所述处理室中的等离子体;以及在所述衬底上沉积金属掺杂的无定形硅硬掩模膜。
在其它特征中,所述处理室包括等离子体增强化学气相沉积(PECVD)处理室。所述基于金属的前体气体包括金属卤化物前体气体。所述金属卤化物前体气体是选自由WFa、TiClb、WClc、HfCld和TaCle组成的群组,其中a、b、c、d和e为大于或等于1的整数。所述基于金属的前体气体包括四(二甲氨基)钛(TDMAT)前体气体。所述基于金属的前体气体包括双(叔丁基亚氨)-双-(二甲氨基)钨(BTBMW)前体气体。所述载气选自由氢分子(H2)、氩(Ar)、氮分子(N2)、氦(He)和/或它们的组合组成的群组。所述硅前体气体选自由硅烷和原硅酸四乙酯组成的群组。
从详细描述、权利要求和附图中本公开内容的适用性的进一步范围将变得显而易见。详细描述和具体实施例仅用于说明的目的,并非意在限制本公开的范围。
附图说明
根据详细描述和附图,本发明将被更充分地理解,其中:
图1是根据本发明图解用于沉积金属掺杂的无定形碳或硅硬掩模的衬底处理室的一实施例的功能性框图;
图2是根据本发明图解用于沉积金属掺杂的无定形碳硬掩模的方法的一实施例的流程图;以及
图3是根据本发明图解用于沉积金属掺杂的无定形硅硬掩模的方法的一实施例的流程图。
在附图中,附图标记可以被重新使用以标识相似和/或相同的元件。
具体实施方式
无定形碳和硅膜可以用作用于蚀刻高深宽比特征的硬掩模。在例如3D存储器之类的一些应用中,硬掩模膜必须是高蚀刻选择性的。其结果是,硬掩模膜应是硬的、致密的并提供去除容易性和蚀刻选择性的平衡。本发明所述的***和方法可用于使无定形碳或硅硬掩模膜致密化,以增加对电介质蚀刻化学品的蚀刻选择性。
本文描述的***和方法用基于金属的掺杂剂对无定形碳或硅硬掩模膜掺杂。仅举例而言,基于金属的掺杂剂可以由金属卤化物前体提供。在一些实施例中,所述金属卤化物前体可以包括钨氟化物(WFa)、钛氯化物(TiClb)、钨氯化物(WClc)、铪氯化物(HfCld)、钽氯化物(TaCle)、或其他合适的金属卤化物前体,其中,a、b、c、d和e是大于零的整数。尽管前面的金属卤化物前体的实例包括氟和氯,但是也可使用其它的包括溴(Br)或碘(I)的金属卤化物前体。在其它实施例中,基于金属的掺杂剂可以由四(二甲氨基)钛(TDMAT)前体、双(叔丁基亚氨)-双-(二甲氨基)钨(BTBMW)前体或其他合适的金属前体提供。
在一些实施例中,无定形碳或硅前体被添加到处理室中的载气中。例如,无定形碳前体可包括烃前体。烃前体可以包括CxHy,其中x为2至10的整数,y为2至24的整数。在一些实例中,烃前体可以包括甲烷、乙炔、乙烯、丙烯、丁烷、环己烷、苯和甲苯(分别为CH4,C2H2,C2H4,C3H6,C4H10,C6H6,C6H12以及C7H8)。仅举例而言,无定形硅前体可包括硅烷或原硅酸四乙酯(TEOS)类前体。在一些实施例中,载气可以包括氢分子(H2)、氩(Ar)、氮分子(N2)、氦(He)和/或它们的组合。本发明所述的PECVD工艺沉积更致密和更具蚀刻选择性的金属掺杂的无定形碳或硅膜。
使用本文所述的基于金属的前体掺杂的无定形碳或硅硬掩模膜由于较高的交联而分别创建包括金属碳化物或金属硅化物的硬掩模膜。较高的掺杂水平增大选择性,但往往增加后续步骤的成本。因此掺杂水平和选择性是平衡的(balanced)。所得到的金属掺杂的无定形碳或硅硬掩模膜是较硬的和较致密的,同时对于半导体硬掩模应用仍然是可去除的。
现在参考图1,示出了用于执行PECVD沉积或蚀刻的衬底处理***100的一个实施例。虽然前述实施例涉及PECVD***,但也可以使用其他基于等离子体的衬底的工艺。其他类型的等离子体工艺包括原子层沉积、电感耦合等离子体、电容耦合等离子体、微波等离子体CVD、远程等离子体增强CVD以及其他类似的工艺。
衬底处理***100包括处理室102,处理室102包围衬底处理***100的其他部件并包含RF等离子体。衬底处理***100包括上电极104和基座106,基座106包括下电极107。衬底108被布置在基座106上,在上电极104和下电极107之间。
仅举例而言,上电极104可包括喷头109,喷头109引入并分配处理气体。替代地,上电极104可包括导电板,而处理气体可以以另一种方式被引入。下电极107可以被布置在不导电的基座中。替代地,基座106可包括静电卡盘,静电卡盘包括作为下电极107的导电板。
RF产生***110生成并输出RF电压到上电极和下电极中的一个中。上电极和下电极中的另一个可以是直流接地、交流接地或悬浮的。仅举例而言,射频产生***110可包括RF电压产生器111,RF电压产生器111产生RF电压,该RF电压经由匹配和分配网络112馈送到上电极104或下电极107。
图1示出了一种气体输送***130的一个实施例。气体输送***130包括一个或多个气体源132-1、132-2、...、和132-N(统称为气体源132),其中N是大于零的整数。这些气体源提供一种或多种前体以及它们的混合物。也可以使用气化的前体。气体源132通过阀134-1、134-2、...、和134-N(统称阀134)和质量流量控制器136-1、136-2、...、和136-N(统称为质量流量控制器136)连接到歧管140。歧管140的输出被馈送到处理室102。仅举例而言,歧管140的输出被馈送到喷头109。
加热器142可被连接到布置在基座106中的加热线圈(未示出)来加热基座106。加热器142可用于控制基座106和衬底108的温度。阀150和泵152可以被用于从处理室102排出反应物。控制器160可用于控制衬底处理***100的各种组件。仅举例而言,控制器160可用于控制:处理气体、载气和前体气体的流动,点燃和熄灭等离子体,反应物的去除,室参数的监控等。
现在参考图2,一种根据本发明用于沉积金属掺杂的无定形碳硬掩模膜的方法200被示出。在204中,将衬底定位于处理室(例如PECVD处理室)中。在208,将载气供给到处理室中。在一些实施例中,载气可以包括氢分子(H2)、氩(Ar)、氮分子(N2)、氦(He)和/或它们的组合。
在216,烃前体被提供到处理室中。在一些实施例中,该烃前体可以包括CxHy,其中x为2至10的整数,y为2至24的整数。在一些实施例中,该烃前体可以包括甲烷、乙炔、乙烯、丙烯、丁烷、环己烷、苯和甲苯。
在220,将基于金属的前体或掺杂剂供给到处理室中。在一些实施例中,基于金属的前体包括金属卤化物前体,例如WFa、TiClb、WClc、HfCld、TaCle或其它合适的金属卤化物前体,其中a、b、c、d和e为大于或等于零的整数。尽管前面的金属卤化物前体的实例包括氟和氯,但是,也可使用其它的包括溴(Br)或碘(I)的金属卤化物前体。在其它实施例中,基于金属的前体可以由四(二甲氨基)钛(TDMAT)前体、双(叔丁基亚氨)-双-(二甲氨基)钨(BTBMW)前体或其他合适的金属前体提供。
在222中,使等离子体在处理室产生或供给等离子体到处理室中。在224,在衬底上沉积金属掺杂的无定形碳硬掩模膜。在衬底处理过程中,金属掺杂的无定形碳硬掩模膜可以用作硬掩模。
现在参考图3,一种根据本发明用于沉积金属掺杂的无定形硅硬掩模膜的方法250被示出。在254中,将衬底定位于处理室(例如PECVD处理室)中。在258,将载气供给到处理室中。在一些实施例中,载气可以包括氢分子(H2)、氩(Ar)、氮分子(N2)、氦(He)和/或它们的组合。
在266,硅前体被提供到处理室中。仅举例而言,无定形硅前体可包括硅烷或原硅酸四乙酯(TEOS)类前体。
在270,将基于金属的前体或掺杂剂供给到处理室中。在一些实施例中,基于金属的前体包括金属卤化物前体,例如WFa、TiClb、WClc、HfCld、TaCle或其它合适的金属卤化物前体,其中a、b、c、d和e为大于或等于零的整数。尽管前面的金属卤化物前体的实例包括氟和氯,但是,也可使用其它的包括溴(Br)或碘(I)的金属卤化物前体。在其它实施例中,基于金属的前体可以由四(二甲氨基)钛(TDMAT)前体、双(叔丁基亚氨)-双-(二甲氨基)钨(BTBMW)前体或其他合适的金属前体提供。
在272中,使等离子体在处理室产生或供给等离子体到处理室中。在274,在衬底上沉积金属掺杂的无定形硅硬掩模膜。在衬底处理过程中,金属掺杂的无定形硅硬掩模膜可以用作硬掩模。
下述表根据本发明列出了烃前体气体、载气、基于金属的前体和金属掺杂的无定形碳硬掩模膜的其它工艺参数的实施例:
<u>工艺参数</u> | <u>值</u> |
温度 | 400℃–500℃ |
压强 | 0.2托至9托 |
WF<sub>6</sub> | 250sccm |
CH<sub>4</sub> | 2000sccm |
H<sub>2</sub> | 500sccm |
高频功率 | 800W至2500W |
低频功率 | 1000W至2500W |
在本实施例中,处理室温度是在400℃-500℃的温度范围内。处理室的真空压强是在0.2托到9托的范围内。高频RF功率设定在800W到2500W的范围内。低频RF功率设定在1000W至2500W的范围内。载气是氢分子,基于金属的前体气体是六氟化钨,而碳前体是甲烷。其它前体可以使用类似的或不同的处理室设置。
在其它实施例中,工艺温度可以高达650℃。在其它实施例中,WFa以6到75sccm供给,CH4以750sccm供给,Ar和N2以5000sccm供给,其中工艺压强在2托至7托之间,工艺温度400℃和500℃之间。
前面的描述在本质上仅仅是说明性的,并且决不旨在限制本公开、本公开的应用或用途。本公开的广泛教导可以以各种形式来实现。由于其它的修改将根据对附图、说明书和权利要求书的研究变得显而易见,因此,虽然本公开包括特定示例,但本公开的真实范围不应当受此限制。如本文所使用的,短语A、B和C中的至少一个应该被解释为指使用非排他性的逻辑或(OR)的逻辑(A或B或C),不应该被解释为指“A中的至少一个,B中的至少一个,和C中的至少一个”。应当理解的是,在方法中的一个或多个步骤可以以不同的顺序(或同时)而不改变本公开的原理来执行。
在一些实现方式中,控制器是***的一部分,该***可以是上述实例的一部分。这种***可以包括半导体处理设备,该半导体处理设备包括一个或多个处理工具、一个或多个处理室、用于处理的一个或多个平台和/或具体的处理组件(晶片基座、气流***等)。这些***可以与用于控制它们在处理半导体晶片或衬底之前、期间和之后的操作的电子器件一体化。电子器件可以称为“控制器”,该控制器可以控制一个或多个***的各种元件或子部件。根据处理要求和/或***的类型,控制器可以被编程以控制本文公开的任何工艺,包括控制处理气体输送、温度设置(例如,加热和/或冷却)、压强设置、真空设置、功率设置、射频(RF)产生器设置、RF匹配电路设置、频率设置、流速设置、流体输送设置、位置及操作设置、晶片转移进出工具和其他转移工具和/或与具体***连接或通过接口连接的装载锁。
宽泛地讲,控制器可以定义为接收指令、发布指令、控制操作、启用清洁操作、启用端点测量等等的具有各种集成电路、逻辑、存储器和/或软件的电子器件。集成电路可以包括存储程序指令的固件形式的芯片、数字信号处理器(DSP)、定义为专用集成电路(ASIC)的芯片和/或一个或多个微处理器或执行程序指令(例如,软件)的微控制器。程序指令可以是以各种单独设置的形式(或程序文件)通信到控制器的指令,该设置定义用于在半导体晶片或***上或针对半导体晶片或***执行特定过程的操作参数。在一些实施方式中,操作参数可以是由工艺工程师定义的用于在制备晶片的一个或多个(种)层、材料、金属、氧化物、硅、二氧化硅、表面、电路和/或管芯期间完成一个或多个处理步骤的配方(recipe)的一部分。
在一些实现方式中,控制器可以是与***集成、耦接或者说是通过网络连接***或它们的组合的计算机的一部分或者与该计算机耦接。例如,控制器可以在“云端”或者是fab主机***的全部或一部分,从而可以允许远程访问晶片处理。计算机可以启用对***的远程访问以监测制造操作的当前进程,检查过去的制造操作的历史,检查多个制造操作的趋势或性能标准,改变当前处理的参数,设置处理步骤以跟随当前的处理或者开始新的工艺。在一些实例中,远程计算机(例如,服务器)可以通过网络给***提供工艺配方,网络可以包括本地网络或互联网。远程计算机可以包括允许输入或编程参数和/或设置的用户界面,该参数和/或设置然后从远程计算机通信到***。在一些实例中,控制器接收数据形式的指令,该指令指明在一个或多个操作期间将要执行的每个处理步骤的参数。应当理解,参数可以针对将要执行的工艺类型以及工具类型,控制器被配置成连接或控制该工具类型。因此,如上所述,控制器可以例如通过包括一个或多个分立的控制器而为分布式,这些分立的控制器通过网络连接在一起并且朝着共同的目标(例如,本文所述的工艺和控制)工作。用于这些目的的分布式控制器的实例可以是与结合以控制室内工艺的一个或多个远程集成电路(例如,在平台水平或作为远程计算机的一部分)通信的室上的一个或多个集成电路。
在非限制性的条件下,示例的***可以包括等离子体蚀刻室或模块、沉积室或模块、旋转清洗室或模块、金属电镀室或模块、清洁室或模块、倒角边缘蚀刻室或模块、物理气相沉积(PVD)室或模块、化学气相沉积(CVD)室或模块、原子层沉积(ALD)室或模块、原子层蚀刻(ALE)室或模块、离子注入室或模块、轨道室或模块、以及在半导体晶片的制备和/或制造中可以关联上或使用的任何其他的半导体处理***。
如上所述,根据工具将要执行的一个或多个工艺步骤,控制器可以与一个或多个其他的工具电路或模块、其他工具组件、组合工具、其他工具界面、相邻的工具、邻接工具、位于整个工厂中的工具、主机、另一个控制器、或者在将晶片的容器往来于半导体制造工厂中的工具位置和/或装载口搬运的材料搬运中使用的工具通信。
Claims (36)
1.一种用于沉积金属掺杂的无定形碳硬掩模膜的方法,其包括:
将衬底布置在处理室中的基座上;
供给载气至所述处理室;
供给烃前体气体至所述处理室;
供给基于金属的前体气体至所述处理室;
在第一频率下将第一RF功率提供到所述基座;
在低于所述第一频率的第二频率下将第二RF功率提供到所述基座;
使等离子体在所述处理室产生或供给等离子体到所述处理室中的一者;以及
在所述衬底上沉积金属掺杂的无定形碳硬掩模膜,其中所述碳硬掩模膜包括金属碳化物,增加了蚀刻选择性。
2.根据权利要求1所述的方法,其中所述处理室包括等离子体增强化学气相沉积(PECVD)处理室。
3.根据权利要求1所述的方法,其中所述基于金属的前体气体包括金属卤化物前体气体。
4.根据权利要求3所述的方法,其中所述金属卤化物前体气体是选自由WFa、TiClb、WClc、HfCld和TaCle组成的群组,其中a、b、c、d和e为大于或等于1的整数。
5.根据权利要求1所述的方法,其中所述基于金属的前体气体包括四(二甲氨基)钛(TDMAT)前体气体。
6.根据权利要求1所述的方法,其中所述基于金属的前体气体包括双(叔丁基亚氨)-双-(二甲氨基)钨(BTBMW)前体气体。
7.根据权利要求1所述的方法,其中所述载气选自由氢分子(H2)、氩(Ar)、氮分子(N2)、氦(He)和/或它们的组合组成的群组。
8.根据权利要求1所述的方法,其中所述烃前体气体包括CxHy,其中x为2至10的整数,y为2至24的整数。
9.根据权利要求1所述的方法,其中所述烃前体气体选自由甲烷、乙炔、乙烯、丙烯、丁烷、环己烷、苯和甲苯组成的群组。
10.根据权利要求1所述的方法,其中所述基于金属的前体气体包括六氟化钨,所述烃前体气体包含甲烷,并且所述载气包括氢分子。
11.一种用于沉积金属掺杂的无定形硅硬掩模膜的方法,其包括:
将衬底布置在处理室中的基座上;
供给载气至所述处理室;
供给硅前体气体至所述处理室;
供给基于金属的前体气体至所述处理室;
在第一频率下将第一RF功率提供到所述基座;
在低于所述第一频率的第二频率下将第二RF功率提供到所述基座;
使等离子体在所述处理室产生或供给等离子体到所述处理室中的一者;以及
在所述衬底上沉积金属掺杂的无定形硅硬掩模膜,其中所述硅硬掩模膜包括金属硅化物,增加了蚀刻选择性。
12.根据权利要求11所述的方法,其中所述处理室包括等离子体增强化学气相沉积(PECVD)处理室。
13.根据权利要求11所述的方法,其中所述基于金属的前体气体包括金属卤化物前体气体。
14.根据权利要求13所述的方法,其中所述金属卤化物前体气体选自由WFa、TiClb、WClc、HfCld和TaCle组成的群组,其中a、b、c、d和e为大于或等于1的整数。
15.根据权利要求11所述的方法,其中所述基于金属的前体气体包括四(二甲氨基)钛(TDMAT)前体气体。
16.根据权利要求11所述的方法,其中所述基于金属的前体气体包括双(叔丁基亚氨)-双-(二甲氨基)钨(BTBMW)前体气体。
17.根据权利要求11所述的方法,其中所述载气选自由氢分子(H2)、氩(Ar)、氮分子(N2)、氦(He)和/或它们的组合组成的群组。
18.根据权利要求11所述的方法,其中所述硅前体气体选自由硅烷和原硅酸四乙酯组成的群组。
19.一种用于沉积金属掺杂的无定形碳硬掩模膜的衬底处理***,其包括:
处理室,其包括被配置成支撑衬底的衬底支撑件;
被配置成选择性地供应处理气体至所述处理室的气体供给***;
被配置成选择性地使等离子体在所述处理室产生或供给等离子体到所述处理室中的等离子体产生器;
控制器,其被配置成控制所述气体供给***和所述等离子体产生器并且被配置成:
供给载气至所述处理室;
供给烃前体气体至所述处理室;
供给基于金属的前体气体至所述处理室;
在第一频率下将第一RF功率提供到所述衬底支撑件;
在低于所述第一频率的第二频率下将第二RF功率提供到所述衬底支撑件;
控制所述等离子体产生器以使等离子体在所述处理室产生或供给等离子体到所述处理室;以及
在所述衬底上沉积金属掺杂的无定形碳硬掩模膜,其中所述碳硬掩模膜包括金属碳化物,增加了蚀刻选择性。
20.根据权利要求19所述的衬底处理***,其中所述处理室包括等离子体增强化学气相沉积(PECVD)处理室。
21.根据权利要求19所述的衬底处理***,其中所述基于金属的前体气体包括金属卤化物前体气体。
22.根据权利要求21所述的衬底处理***,其中所述金属卤化物前体气体选自由WFa、TiClb、WClc、HfCld和TaCle组成的群组,其中a、b、c、d和e为大于或等于1的整数。
23.根据权利要求19所述的衬底处理***,其中所述基于金属的前体气体包括四(二甲氨基)钛(TDMAT)前体气体。
24.根据权利要求19所述的衬底处理***,其中所述基于金属的前体气体包括双(叔丁基亚氨)-双-(二甲氨基)钨(BTBMW)前体气体。
25.根据权利要求19所述的衬底处理***,其中所述载气选自由氢分子(H2)、氩(Ar)、氮分子(N2)、氦(He)和/或它们的组合组成的群组。
26.根据权利要求19所述的衬底处理***,其中所述烃前体气体包括CxHy,其中x为2至10的整数,y为2至24的整数。
27.根据权利要求19所述的衬底处理***,其中所述烃前体气体选自由甲烷、乙炔、乙烯、丙烯、丁烷、环己烷、苯和甲苯组成的群组。
28.根据权利要求19所述的衬底处理***,其中所述基于金属的前体气体包括六氟化钨,所述烃前体气体包含甲烷,并且所述载气包括氢分子。
29.一种用于沉积金属掺杂的无定形硅硬掩模膜的衬底处理***,其包括:
处理室,其包括被配置成支撑衬底的衬底支撑件;
被配置成选择性地供应处理气体至处理室的气体供给***;
被配置成选择性地使等离子体在所述处理室产生或供给等离子体到所述处理室中的等离子体产生器;
控制器,其被配置成控制所述气体供给***和所述等离子体产生器并且被配置成:
供给载气至所述处理室;
供给硅前体气体至所述处理室;
供给基于金属的前体气体至所述处理室;
在第一频率下将第一RF功率提供到所述衬底支撑件;
在低于所述第一频率的第二频率下将第二RF功率提供到所述衬底支撑件;
控制所述等离子体产生器以使等离子体在所述处理室产生或供给等离子体到所述处理室;以及
在所述衬底上沉积金属掺杂的无定形硅硬掩模膜,其中所述硅硬掩模膜包括金属硅化物,增加了蚀刻选择性。
30.根据权利要求29所述的衬底处理***,其中所述处理室包括等离子体增强化学气相沉积(PECVD)处理室。
31.根据权利要求29所述的衬底处理***,其中所述基于金属的前体气体包括金属卤化物前体气体。
32.根据权利要求31所述的衬底处理***,其中所述金属卤化物前体气体选自由WFa、TiClb、WClc、HfCld和TaCle组成的群组,其中a、b、c、d和e为大于或等于1的整数。
33.根据权利要求29所述的衬底处理***,其中所述基于金属的前体气体包括四(二甲氨基)钛(TDMAT)前体气体。
34.根据权利要求29所述的衬底处理***,其中所述基于金属的前体气体包括双(叔丁基亚氨)-双-(二甲氨基)钨(BTBMW)前体气体。
35.根据权利要求29所述的衬底处理***,其中所述载气选自由氢分子(H2)、氩(Ar)、氮分子(N2)、氦(He)和/或它们的组合组成的群组。
36.根据权利要求29所述的衬底处理***,其中所述硅前体气体选自由硅烷和原硅酸四乙酯组成的群组。
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US9520295B2 (en) | 2016-12-13 |
CN105845551A (zh) | 2016-08-10 |
TWI718120B (zh) | 2021-02-11 |
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