TWI718120B - 使用作為基板處理系統中的硬遮罩之非晶碳與矽膜的金屬摻雜 - Google Patents
使用作為基板處理系統中的硬遮罩之非晶碳與矽膜的金屬摻雜 Download PDFInfo
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- TWI718120B TWI718120B TW105102278A TW105102278A TWI718120B TW I718120 B TWI718120 B TW I718120B TW 105102278 A TW105102278 A TW 105102278A TW 105102278 A TW105102278 A TW 105102278A TW I718120 B TWI718120 B TW I718120B
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- 238000012545 processing Methods 0.000 title claims abstract description 149
- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 229910003481 amorphous carbon Inorganic materials 0.000 title claims abstract description 45
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 14
- 239000002184 metal Substances 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 10
- 239000010703 silicon Substances 0.000 title description 10
- 239000002243 precursor Substances 0.000 claims abstract description 129
- 239000007789 gas Substances 0.000 claims abstract description 123
- 238000000034 method Methods 0.000 claims abstract description 63
- 238000000151 deposition Methods 0.000 claims abstract description 55
- 239000012159 carrier gas Substances 0.000 claims abstract description 30
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 24
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 24
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 24
- 239000012686 silicon precursor Substances 0.000 claims abstract description 13
- 229910001507 metal halide Inorganic materials 0.000 claims description 29
- 150000005309 metal halides Chemical class 0.000 claims description 29
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical group C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 22
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims description 22
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 18
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 229910052786 argon Inorganic materials 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- PPJPTAQKIFHZQU-UHFFFAOYSA-N bis(tert-butylimino)tungsten;dimethylazanide Chemical compound C[N-]C.C[N-]C.CC(C)(C)N=[W]=NC(C)(C)C PPJPTAQKIFHZQU-UHFFFAOYSA-N 0.000 claims description 11
- -1 butylimino Chemical group 0.000 claims description 11
- 239000001307 helium Substances 0.000 claims description 11
- 229910052734 helium Inorganic materials 0.000 claims description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 11
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 8
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 6
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N protonated dimethyl amine Natural products CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910021385 hard carbon Inorganic materials 0.000 claims 1
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 238000005530 etching Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- JVCWKXBYGCJHDF-UHFFFAOYSA-N CC(C)(C)N=[W](N(C)C)(=NC(C)(C)C)N(C)C Chemical compound CC(C)(C)N=[W](N(C)C)(=NC(C)(C)C)N(C)C JVCWKXBYGCJHDF-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- OCVXZQOKBHXGRU-UHFFFAOYSA-N iodine(1+) Chemical compound [I+] OCVXZQOKBHXGRU-UHFFFAOYSA-N 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000007833 carbon precursor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000019800 disodium phosphate Nutrition 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- VQTGUFBGYOIUFS-UHFFFAOYSA-N nitrosylsulfuric acid Chemical group OS(=O)(=O)ON=O VQTGUFBGYOIUFS-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000663 remote plasma-enhanced chemical vapour deposition Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
用於沉積金屬摻雜非晶碳硬遮罩膜或金屬摻雜非晶矽硬遮罩膜的系統與方法包含在處理腔室中配置基板;將載氣供應至該處理腔室;分別將烴前驅物氣體或矽前驅物氣體供應至該處理腔室;將金屬型前驅物氣體供應至該處理腔室;在該處理腔室中產生電漿或供應電漿其中一者;及分別在基板上沉積金屬摻雜非晶碳硬遮罩膜或金屬摻雜非晶矽硬遮罩膜。
Description
本揭露內容係關於基板處理系統及方法,更具體而言,係關於用於在基板上沉積非晶碳及非晶矽硬遮罩的系統及方法。
說明書所提供的背景敘述係為了概略地呈現本揭露內容的背景。在本「先前技術」段落中所描述的範圍內之目前所列名的發明人之成果、以及在申請時可能未以其他方式認定為先前技術的描述之態樣,並未明示或默示地被承認為是相對於本揭露內容的先前技術。
用於執行沉積及/或蝕刻的基板處理系統包含具有基座之處理腔室。例如半導體晶圓的基板可配置於基座上。例如在化學氣相沉積(CVD)製程中,可將包含一或更多前驅物之氣體混合物導入至處理腔室中以在基板上沉積膜或蝕刻基板。在若干基板處理系統中,可使用電漿以活化化學反應,而在本說明書中被稱為電漿輔助CVD(PECVD)。
在基板處理期間,可使用非晶碳及矽膜作為用於蝕刻高縱橫比特徵部的硬遮罩。例如在3D記憶體之應用中,硬遮罩膜應為高蝕刻選擇性的。因
此,該硬遮罩膜應具有較高模量、較緻密、及較高蝕刻化學作用抗性之鍵結的基質。應在下列兩者間取得平衡:在開放製程期間可移除該硬遮罩膜以及使該硬遮罩膜對介電質蝕刻製程為高選擇性的。
用於沉積金屬摻雜非晶碳硬遮罩膜的方法包含在處理腔室中配置基板;將載氣供應至該處理腔室;將烴前驅物氣體供應至該處理腔室;將金屬型前驅物氣體供應至該處理腔室;進行以下其中一者:在該處理腔室中產生電漿或將電漿供應至該處理腔室;及將金屬摻雜非晶碳硬遮罩膜沉積於該基板上。
在其他特徵中,該處理腔室包含電漿輔助化學氣相沉積(PECVD,plasma enhanced chemical vapor deposition)處理腔室。該金屬型前驅物氣體包含金屬鹵化物前驅物氣體。該金屬鹵化物前驅物氣體係選自由WFa、TiClb、WClc、HfCld、及TaCle所構成之群組,其中a、b、c、d、及e為大於或等於1的整數。該金屬型前驅物氣體包含四(二甲基胺基)鈦(TDMAT)前驅物氣體。該金屬型前驅物氣體包含雙(三級丁基亞胺基)-雙-(二甲基胺基)鎢(BTBMW)前驅物氣體。該載氣係選自由分子氫(H2)、氬(Ar)、分子氮(N2)、氦(He)、及/或其組合所構成之群組。該烴前驅物氣體包含CxHy,其中x為從2至10的整數,而y為從2至24的整數。該烴前驅物氣體係選自由甲烷、乙炔、乙烯、丙烯、丁烷、環己烷、苯、或甲苯所構成之群組。該金屬型前驅物氣體包含六氟化鎢,該烴前驅物氣體包含甲烷,而該載氣包含分子氫。
用於沉積金屬摻雜非晶矽硬遮罩膜的方法包含在處理腔室中配置基板;將載氣供應至該處理腔室;將矽前驅物氣體供應至該處理腔室;將金屬型前驅物氣體供應至該處理腔室;進行以下其中一者:在該處理腔室中產生電漿或將電漿供應至該處理腔室;及將金屬摻雜非晶矽硬遮罩膜沉積於該基板上。
在其他特徵中,該處理腔室包含電漿輔助化學氣相沉積(PECVD,plasma enhanced chemical vapor deposition)處理腔室。該金屬型前驅物氣體包含金屬鹵化物前驅物氣體。該金屬鹵化物前驅物氣體係選自由WFa、TiClb、WClc、HfCld、及TaCle所構成之群組,其中a、b、c、d、及e為大於或等於1的整數。該金屬型前驅物氣體包含四(二甲基胺基)鈦(TDMAT)前驅物氣體。該金屬型前驅物氣體包含雙(三級丁基亞胺基)-雙-(二甲基胺基)鎢(BTBMW)前驅物氣體。該載氣係選自由分子氫(H2)、氬(Ar)、分子氮(N2)、氦(He)、及/或其組合所構成之群組。該矽前驅物氣體係選自由矽烷及四乙氧基矽烷所構成之群組。
用於沉積金屬摻雜非晶碳硬遮罩膜的基板處理系統包含處理腔室,其含有配置以支撐基板的基板支撐體。氣體供應系統,其配置以選擇性地將製程氣體供應至該處理腔室。電漿產生器,其配置以選擇性地在該處理腔室中供應電漿;控制器,其配置以控制該氣體供應系統及該電漿產生器,且配置以進行下列操作:將載氣供應至該處理腔室;將烴前驅物氣體供應至該處理腔室;將金屬型前驅物氣體供應至該處理腔室;在該處理腔室中供應電漿;及將金屬摻雜非晶碳硬遮罩膜沉積於該基板上。
在其他特徵中,該處理腔室包含電漿輔助化學氣相沉積(PECVD,plasma enhanced chemical vapor deposition)處理腔室。該金屬型前驅物氣體包含
金屬鹵化物前驅物氣體。該金屬鹵化物前驅物氣體係選自由WFa、TiClb、WClc、HfCld、及TaCle所構成之群組,其中a、b、c、d、及e為大於或等於1的整數。該金屬型前驅物氣體包含四(二甲基胺基)鈦(TDMAT)前驅物氣體。該金屬型前驅物氣體包含雙(三級丁基亞胺基)-雙-(二甲基胺基)鎢(BTBMW)前驅物氣體。該載氣係選自由分子氫(H2)、氬(Ar)、分子氮(N2)、氦(He)、及/或其組合所構成之群組。該烴前驅物氣體包含CxHy,其中x為從2至10的整數,而y為從2至24的整數。該烴前驅物氣體係選自由甲烷、乙炔、乙烯、丙烯、丁烷、環己烷、苯、或甲苯所構成之群組。該金屬型前驅物氣體包含六氟化鎢,該烴前驅物氣體包含甲烷,而該載氣包含分子氫。
用於沉積金屬摻雜非晶矽硬遮罩膜的基板處理系統包含處理腔室,其含有配置以支撐基板的基板支撐體;氣體供應系統,其配置以選擇性地將製程氣體供應至該處理腔室;電漿產生器,其配置以選擇性地在該處理腔室中供應電漿;控制器,其配置以控制該氣體供應系統及該電漿產生器,且配置以進行下列操作:將載氣供應至該處理腔室;將矽前驅物氣體供應至該處理腔室;將金屬型前驅物氣體供應至該處理腔室;在該處理腔室中供應電漿;及將金屬摻雜非晶矽硬遮罩膜沉積於該基板上。
在其他特徵中,該處理腔室包含電漿輔助化學氣相沉積(PECVD,plasma enhanced chemical vapor deposition)處理腔室。該金屬型前驅物氣體包含金屬鹵化物前驅物氣體。該金屬鹵化物前驅物氣體係選自由WFa、TiClb、WClc、HfCld、及TaCle所構成之群組,其中a、b、c、d、及e為大於或等於1的整數。該金屬型前驅物氣體包含四(二甲基胺基)鈦(TDMAT)前驅物氣體。該金屬型前驅物氣體包含雙(三級丁基亞胺基)-雙-(二甲基胺基)鎢(BTBMW)前驅物氣體。該載氣
係選自由分子氫(H2)、氬(Ar)、分子氮(N2)、氦(He)、及/或其組合所構成之群組。該矽前驅物氣體係選自由矽烷及四乙氧基矽烷所構成之群組。
本揭露內容的可應用性之進一步範圍將從實施方式、請求項、及圖式而變得清楚明瞭。實施方式及具體範例僅意為說明之目的且並非意為限制本揭露內容之範疇。
100:基板處理系統
102:處理腔室
104:上電極
106:基座
107:下電極
108:基板
109:噴淋頭
110:射頻產生系統
111:射頻電壓產生器
112:匹配與分配網路
130:氣體輸送系統
132:氣體源
134:閥
136:質量流量控制器
140:歧管
142:加熱器
150:閥
152:泵浦
160:控制器
200:方法
204:步驟
208:步驟
216:步驟
220:步驟
222:步驟
224:步驟
250:方法
254:步驟
258:步驟
266:步驟
270:步驟
272:步驟
274:步驟
從實施方式及隨附圖式將更充分理解本揭露內容,其中:
圖1依據本揭露內容,係為繪示用於沉積金屬摻雜非晶碳或矽硬遮罩的基板處理腔室之範例的功能性方塊圖;
圖2依據本揭露內容,係為繪示用於沉積金屬摻雜非晶碳硬遮罩的方法之範例的流程圖;及
圖3依據本揭露內容,係為繪示用於沉積金屬摻雜非晶矽硬遮罩的方法之範例的流程圖。
在該等圖式中,可重複使用參考符號以識別相似及/或相同的元件。
非晶碳及矽膜係作為用於蝕刻高縱橫比之特徵部的硬遮罩來使用。在例如3-D記憶體的若干應用中,硬遮罩膜需要為高蝕刻選擇性的。因此,該硬遮罩膜應為堅硬、緻密的,且提供易於移除及蝕刻選擇性之平衡。本說明書中所述之系統及方法可用於使非晶碳或矽之硬遮罩膜緻密化以增加對於介電質蝕刻化學物之蝕刻選擇性。
本說明書中所述之該等系統及方法利用金屬型摻雜劑來摻雜非晶碳或矽之硬遮罩膜。僅以舉例而言,可由金屬鹵化物前驅物來製備金屬型摻雜劑。在若干範例中,金屬鹵化物前驅物可包含鎢氟化物(WFa)、鈦氯化物(TiClb)、鎢氯化物(WClc)、鉿氯化物(HfCld)、鉭氯化物(TaCle)、或其他合適的金屬鹵化物前驅物,其中a、b、c、d、及e為大於零的整數。儘管該前述金屬鹵化物前驅物範例包含氟及氯,然而可使用包含溴(Br)及碘(I)的其他金屬鹵化物前驅物。在其他範例中,可由四(二甲基胺基)鈦(TDMAT)前驅物、雙(三級丁基亞胺基)-雙-(二甲基胺基)鎢(BTBMW)前驅物、或其他合適的金屬前驅物來製備金屬型摻雜劑。
在若干範例中,在處理腔室中將非晶碳或矽前驅物加入載氣中。例如,非晶碳前驅物可包含烴前驅物。烴前驅物可包含CxHy,其中x為從2至10的整數,而y為從2至24的整數。在若干範例中,烴前驅物可包含甲烷、乙炔、乙烯、丙烯、丁烷、環己烷、苯、或甲苯(分別為CH4、C2H2、C2H4、C3H6、C4H10、C6H6、C6H12、及C7H8)。僅以舉例而言,非晶矽前驅物可包含矽烷或類似四乙氧基矽烷(TEOS)的前驅物。在若干範例中,載氣可包含分子氫(H2)、氬(Ar)、分子氮(N2)、氦(He)、及/或其組合。本說明書中所述之電漿輔助化學氣相沉積(PECVD)製程沉積金屬摻雜之非晶碳或矽膜,其更為緻密且更具蝕刻選擇性。
由於較高度的交聯作用所致,使用本說明書中所述之金屬型前驅物來摻雜的非晶碳或矽硬遮罩膜分別產生包含金屬碳化物或金屬矽化物的硬遮罩膜。較高的摻雜程度可增加選擇性但易增加隨後步驟之費用。因此,使摻雜程度及選擇性平衡。該產生之金屬摻雜非晶碳或矽硬遮罩膜係更堅硬且更緻密,同時保持為針對半導體硬遮罩應用係可移除的。
現參照圖1,顯示用於執行PECVD沉積或蝕刻之基板處理系統100的範例。儘管前述範例係關於PECVD系統,然而可使用其他電漿式的基板製程。
其他類型的電漿製程包含原子層沉積、感應耦合電漿、電容耦合電漿、微波電漿CVD、遠端電漿輔助CVD、及其他相似的製程。
基板處理系統100包含處理腔室102,其包圍基板處理系統100的其他構件並容納射頻(RF)電漿。基板處理系統100包含上電極104及包含下電極107的基座106。基板108係配置於基座106上,介於上電極104與下電極107之間。
僅以舉例而言,上電極104可包含導入及分配製程氣體的噴淋頭109。或者,上電極104可包含導板,且製程氣體可以另一方式導入。下電極107係可配置於非傳導性的基座中。或者,基座106可包含靜電卡盤,其包含作為下電極107之導板。
RF產生系統110產生並輸出RF電壓至上電極與下電極其中一者。上電極與下電極其中另一者可為直流(DC)接地、交流(AC)接地、或浮動。舉例而言,RF產生系統110可包含產生RF電壓之RF電壓產生器111,該RF電壓係藉由匹配與分配網路112而供至上電極104或下電極107。
圖1中顯示氣體輸送系統130之範例。氣體輸送系統130包含一或更多氣體源132-1、132-2、…、及132-N(統稱為氣體源132),其中N為大於零的整數。該氣體源供應一或更多前驅物及其混合物。亦可使用汽化之前驅物。氣體源132藉由閥134-1、134-2、…,及134-N(統稱為閥134),與質量流量控制器136-1、136-2、…,及136-N(統稱為質量流量控制器136),連接至岐管140。岐管140之輸出物則供至處理腔室102。僅以舉例而言,岐管140之輸出物係供至噴淋頭109。
可將加熱器142連接至配置於基座106中的加熱器線圈(未顯示)以加熱基座106。可使用加熱器142以控制基座106及基板108的溫度。可使用閥150及泵浦152以自處理腔室102將反應物抽空。可使用控制器160以控制基板處理系
統100的各種構件。僅以舉例而言,可使用控制器160來控制製程氣體、載氣、及前驅物氣體的流動、引燃及熄滅電漿、移除反應物、監測腔室參數等。
現參照圖2,顯示依據本揭露內容之用於沉積金屬摻雜非晶碳硬遮罩膜的方法200。在204,將基板放置於例如PECVD處理腔室之處理腔室中。在208,將載氣供應至該處理腔室。在若干範例中,載氣可包含分子氫(H2)、氬(Ar)、分子氮(N2)、氦(He)、及/或其組合。
在216,將烴前驅物供應至該處理腔室中。在若干範例中,烴前驅物可包含CxHy,其中x為從2至10的整數,而y為從2至24的整數。在若干範例中,烴前驅物可包含甲烷、乙炔、乙烯、丙烯、丁烷、環己烷、苯、或甲苯。
在220,將金屬型前驅物或摻雜劑供應至該處理腔室。在若干範例中,金屬型前驅物包含金屬鹵化物前驅物,例如WFa、TiClb、WClc、HfCld、TaCle、或其他合適的金屬鹵化物前驅物,其中a、b、c、d、及e為大於零的整數。儘管前述金屬鹵化物前驅物範例包含氟及氯,然而可使用包含溴(Br)或碘(I)的其他金屬鹵化物前驅物。在其他範例中,可由四(二甲基胺基)鈦(TDMAT)前驅物、雙(三級丁基亞胺基)-雙-(二甲基胺基)鎢(BTBMW)前驅物、或其他合適的金屬前驅物來製備金屬型前驅物。
在222,在該處理腔室中產生電漿、或將電漿供應至該處理腔室。在224,在基板上沉積金屬摻雜非晶碳硬遮罩膜。在基板處理期間,該金屬摻雜非晶碳硬遮罩膜可作為硬遮罩來使用。
現參照圖3,顯示依據本揭露內容之用於沉積金屬摻雜非晶矽硬遮罩膜的方法250。在254,將基板放置於例如PECVD處理腔室之處理腔室中。在258,將載氣供應至該處理腔室。在若干範例中,載氣可包含分子氫(H2)、氬(Ar)、分子氮(N2)、氦(He)、及/或其組合。
在266,將矽前驅物供應至該處理腔室中。僅以舉例而言,非晶矽前驅物可包含矽烷或類似四乙氧基矽烷(TEOS)的前驅物。
在270,將金屬型前驅物或摻雜劑供應至該處理腔室。在若干範例中,金屬型前驅物包含金屬鹵化物前驅物,例如WFa、TiClb、WClc、HfCld、TaCle、或其他合適的金屬鹵化物前驅物,其中a、b、c、d、及e為大於零的整數。儘管前述金屬鹵化物前驅物範例包含氟及氯,然而可使用包含溴(Br)或碘(I)的其他金屬鹵化物前驅物。在其他範例中,可由四(二甲基胺基)鈦(TDMAT)前驅物、雙(三級丁基亞胺基)-雙-(二甲基胺基)鎢(BTBMW)前驅物、或其他合適的金屬前驅物來製備金屬型前驅物。
在272,在該處理腔室中產生電漿、或將電漿供應至該處理腔室。在274,在基板上沉積金屬摻雜非晶矽硬遮罩膜。在基板處理期間,該金屬摻雜非晶矽硬遮罩膜可作為硬遮罩來使用。
在此範例中,處理腔室溫度在400℃-500℃的範圍中。處理腔室真空壓力在0.2Torr至9Torr的範圍中。高頻RF功率係設定於800W至2500W的範圍中。低頻RF功率係設定於1000W至2500W的範圍中。載氣為分子氫,金屬型前驅物氣體為六氟化鎢(tungsten hexafluoride),而碳前驅物為甲烷。其他前驅物可使用相似或不同的製程腔室設定。
在其他範例中,製程溫度可為高達650℃。在其他範例中,以6至75sccm來供應WFa,以750sccm來供應CH4,以5000sccm來供應Ar及N2,並有2Torr至7Torr間的製程壓力以及400℃與500℃間的製程溫度。
先前的敘述實質上僅為說明性,且無限制本揭露內容、其應用、或用途之意圖。可以各種形式來實施本揭露內容之主要教示。因此,儘管本揭露內容包含特定的範例,由於根據圖式、說明書、及下列請求項的研究,其他修改將變得清楚明瞭,故本揭露內容的真實範疇不應受到如此限制。如本說明書中所使用,用語「A、B、及C其中至少一者」應解釋為意指使用非排除性邏輯上的OR之邏輯上的(A or B or C),且不應解釋為意指「A中之至少一者、B中之至少一者、及C中之至少一者」。應瞭解,可在不改變本揭露內容之原則的情況下,以不同的順序(或同時)執行方法中的一或更多步驟。
在若干實施例中,控制器係為系統的部分,其可為上述範例的部分。此類系統可包含半導體處理設備,含一或複數處理工具、一或複數腔室、用於處理的一或複數工作台、及/或特定處理元件(晶圓基座、氣流系統等)。該等系統可與電子裝置整合,以於半導體晶圓或基板之處理前、處理期間、及處理後控制其操作。可將該等電子裝置稱為「控制器」,其可控制一或複數系統的各種元件或子部件。依據處理之需求及/或系統之類型,可將控制器程式化以控制本說明書中所揭露之製程的任一者,包含處理氣體之輸送、溫度設定(如:加熱及/或冷卻)、壓力設定、真空設定、功率設定、射頻(RF,radio frequency)產
生器設定、RF匹配電路設定、頻率設定、流率設定、流體輸送設定、位置及操作設定、進出工具及連接至特定系統或與特定系統介面接合的其他傳送工具及/或負載鎖室之晶圓傳送。
廣泛而言,可將控制器定義為具有接收指令、發送指令、控制操作、允許清潔操作、允許終點量測等之各種積體電路、邏輯、記憶體、及/或軟體的電子設備。該積體電路可包含儲存程式指令的韌體形式之晶片、數位信號處理器(DSPs,digital signal processors)、定義為特殊應用積體電路(ASICs,application specific integrated circuits)之晶片、及/或執行程式指令(如:軟體)之一或更多的微處理器或微控制器。程式指令可為以各種個別設定(或程式檔案)之形式傳送到控制器的指令,其定義用以在半導體晶圓上、或針對半導體晶圓、或對系統執行特定製程的操作參數。在若干實施中,該操作參數可為由製程工程師所定義之配方的部分,該配方係用以在一或更多的層、材料、金屬、氧化物、矽、二氧化矽、表面、電路、及/或晶圓之晶粒的製造期間,完成一或更多的處理步驟。
在若干實施中,控制器可為電腦的部分或耦接至電腦,該電腦係與系統整合、耦接至系統、或透過網路連接至系統、或上述之組合。舉例而言,控制器係可位於「雲端」、或為晶圓廠主機電腦系統的全部或部分,其可允許晶圓處理之遠端存取。該電腦能達成對該系統之遠端存取,以監視製造操作之目前製程、查看過去製造操作之歷史、查看來自多個製造操作之趨勢或性能指標,來改變目前處理之參數,以設定處理步驟來接續目前的處理、或開始新的製程。在若干範例中,遠端電腦(如:伺服器)可透過網路將製程配方提供給系統,該網路可包含區域網路或網際網路。該遠端電腦可包含可達成參數及/或設定之輸入或編程的使用者介面,該等參數或設定接著自該遠端電腦傳送至該系統。在若干範例中,控制器接收資料形式之指令,在一或更多的操作期間,其針對
該待執行的處理步驟之每一者而指定參數。應瞭解,該等參數可特定於待執行之製程的類型、及工具(控制器係配置成與該工具介面接合或控制該工具)的類型。因此,如上所述,控制器可分散,例如藉由包含一或更多的分離的控制器,其透過網路連接在一起並朝共同的目標而作業,例如本說明書中所敘述之製程及控制。用於此類目的之分開的控制器之範例可為腔室上之一或更多的積體電路,其與位於遠端(例如為平台等級、或為遠端電腦的部分)之一或更多的積體電路連通,其結合以控制該腔室上的製程。
範例系統可包含電漿蝕刻腔室或模組、沉積腔室或模組、旋轉沖洗腔室或模組、金屬電鍍腔室或模組、潔淨腔室或模組、斜邊蝕刻腔室或模組、物理氣相沉積(PVD,physical vapor deposition)腔室或模組、化學氣相沉積(CVD,chemical vapor deposition)腔室或模組、原子層沉積(ALD,atomic layer deposition)腔室或模組、原子層蝕刻(ALE,atomic layer etch)腔室或模組、離子植入腔室或模組、徑跡腔室或模組、及可與半導體晶圓之製造及/或生產有關或用於其中的任何其他半導體處理系統,但不限於此。
如上所述,依據待由工具執行之製程步驟(或複數製程步驟),控制器可與下列一或多者通訊:其他工具電路或模組、其他工具元件、群集工具、其他工具介面、鄰接工具、附近工具、位於整個工廠的工具、主要電腦、另一控制器、或將晶圓之容器帶往或帶離半導體製造廠中的工具位置及/或載入埠的用於材料傳送之工具。
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Claims (36)
- 一種用於沉積金屬摻雜非晶碳硬遮罩膜的方法,包含下列步驟:在處理腔室中之基座上配置基板;將載氣供應至該處理腔室;將烴前驅物氣體供應至該處理腔室;將金屬型前驅物氣體供應至該處理腔室;將在第一頻率下的第一RF功率提供至該基座;將在低於該第一頻率之第二頻率下的第二RF功率提供至該基座;進行以下其中一者:在該處理腔室中產生電漿或將電漿供應至該處理腔室;及將金屬摻雜非晶碳硬遮罩膜沉積於該基板上,其中該碳硬遮罩膜包含金屬碳化物。
- 如申請專利範圍第1項之用於沉積金屬摻雜非晶碳硬遮罩膜的方法,其中該處理腔室包含電漿輔助化學氣相沉積(PECVD,plasma enhanced chemical vapor deposition)處理腔室。
- 如申請專利範圍第1項之用於沉積金屬摻雜非晶碳硬遮罩膜的方法,其中該金屬型前驅物氣體包含金屬鹵化物前驅物氣體。
- 如申請專利範圍第3項之用於沉積金屬摻雜非晶碳硬遮罩膜的方法,其中該金屬鹵化物前驅物氣體係選自由WFa、TiClb、WClc、HfCld、及TaCle所構成之群組,其中a、b、c、d、及e為大於或等於1的整數。
- 如申請專利範圍第1項之用於沉積金屬摻雜非晶碳硬遮罩膜的方法,其中該金屬型前驅物氣體包含四(二甲基胺基)鈦(TDMAT)前驅物氣體。
- 如申請專利範圍第1項之用於沉積金屬摻雜非晶碳硬遮罩膜的方法,其中該金屬型前驅物氣體包含雙(三級丁基亞胺基)-雙-(二甲基胺基)鎢(BTBMW)前驅物氣體。
- 如申請專利範圍第1項之用於沉積金屬摻雜非晶碳硬遮罩膜的方法,其中該載氣係選自由分子氫(H2)、氬(Ar)、分子氮(N2)、氦(He)、及/或其組合所構成之群組。
- 如申請專利範圍第1項之用於沉積金屬摻雜非晶碳硬遮罩膜的方法,其中該烴前驅物氣體包含CxHy,其中x為從2至10的整數,而y為從2至24的整數。
- 如申請專利範圍第1項之用於沉積金屬摻雜非晶碳硬遮罩膜的方法,其中該烴前驅物氣體係選自由甲烷、乙炔、乙烯、丙烯、丁烷、環己烷、苯、或甲苯所構成之群組。
- 如申請專利範圍第1項之用於沉積金屬摻雜非晶碳硬遮罩膜的方法,其中該金屬型前驅物氣體包含六氟化鎢,該烴前驅物氣體包含甲烷,而該載氣包含分子氫。
- 一種用於沉積金屬摻雜非晶矽硬遮罩膜的方法,包含下列步驟:在處理腔室中配置基板;將載氣供應至該處理腔室;將矽前驅物氣體供應至該處理腔室;將金屬型前驅物氣體供應至該處理腔室;進行以下其中一者:在該處理腔室中產生電漿或將電漿供應至該處理腔室;及將金屬摻雜非晶矽硬遮罩膜沉積於該基板上。
- 如申請專利範圍第11項之用於沉積金屬摻雜非晶矽硬遮罩膜的方法,其中該處理腔室包含電漿輔助化學氣相沉積(PECVD,plasma enhanced chemical vapor deposition)處理腔室。
- 如申請專利範圍第11項之用於沉積金屬摻雜非晶矽硬遮罩膜的方法,其中該金屬型前驅物氣體包含金屬鹵化物前驅物氣體。
- 如申請專利範圍第13項之用於沉積金屬摻雜非晶矽硬遮罩膜的方法,其中該金屬鹵化物前驅物氣體係選自由WFa、TiClb、WClc、HfCld、及TaCle所構成之群組,其中a、b、c、d、及e為大於或等於1的整數。
- 如申請專利範圍第11項之用於沉積金屬摻雜非晶矽硬遮罩膜的方法,其中該金屬型前驅物氣體包含四(二甲基胺基)鈦(TDMAT)前驅物氣體。
- 如申請專利範圍第11項之用於沉積金屬摻雜非晶矽硬遮罩膜的方法,其中該金屬型前驅物氣體包含雙(三級丁基亞胺基)-雙-(二甲基胺基)鎢(BTBMW)前驅物氣體。
- 如申請專利範圍第11項之用於沉積金屬摻雜非晶矽硬遮罩膜的方法,其中該載氣係選自由分子氫(H2)、氬(Ar)、分子氮(N2)、氦(He)、及/或其組合所構成之群組。
- 如申請專利範圍第11項之用於沉積金屬摻雜非晶矽硬遮罩膜的方法,其中該矽前驅物氣體係選自由矽烷及四乙氧基矽烷所構成之群組。
- 一種用於沉積金屬摻雜非晶碳硬遮罩膜的基板處理系統,包含:處理腔室,其包含配置以支撐基板的基板支撐體;氣體供應系統,其配置以選擇性地將製程氣體供應至該處理腔室;電漿產生器,其配置以選擇性地在該處理腔室中產生電漿或將電漿供應至該處理腔室; 控制器,其配置以控制該氣體供應系統及該電漿產生器,且配置以進行下列操作:將載氣供應至該處理腔室;將烴前驅物氣體供應至該處理腔室;將金屬型前驅物氣體供應至該處理腔室;將在第一頻率下的第一RF功率提供至該基板支撐體;將在低於該第一頻率之第二頻率下的第二RF功率提供至該基板支撐體;控制該電漿產生器以在該處理腔室中產生電漿或將電漿供應至該處理腔室;及將金屬摻雜非晶碳硬遮罩膜沉積於該基板上,其中該碳硬遮罩膜包含金屬碳化物。
- 如申請專利範圍第19項之用於沉積金屬摻雜非晶碳硬遮罩膜的基板處理系統,其中該處理腔室包含電漿輔助化學氣相沉積(PECVD,plasma enhanced chemical vapor deposition)處理腔室。
- 如申請專利範圍第19項之用於沉積金屬摻雜非晶碳硬遮罩膜的基板處理系統,其中該金屬型前驅物氣體包含金屬鹵化物前驅物氣體。
- 如申請專利範圍第21項之用於沉積金屬摻雜非晶碳硬遮罩膜的基板處理系統,其中該金屬鹵化物前驅物氣體係選自由WFa、TiClb、WClc、HfCld、及TaCle所構成之群組,其中a、b、c、d、及e為大於或等於1的整數。
- 如申請專利範圍第19項之用於沉積金屬摻雜非晶碳硬遮罩膜的基板處理系統,其中該金屬型前驅物氣體包含四(二甲基胺基)鈦(TDMAT)前驅物氣體。
- 如申請專利範圍第19項之用於沉積金屬摻雜非晶碳硬遮罩膜的基板處理系統,其中該金屬型前驅物氣體包含雙(三級丁基亞胺基)-雙-(二甲基胺基)鎢(BTBMW)前驅物氣體。
- 如申請專利範圍第19項之用於沉積金屬摻雜非晶碳硬遮罩膜的基板處理系統,其中該載氣係選自由分子氫(H2)、氬(Ar)、分子氮(N2)、氦(He)、及/或其組合所構成之群組。
- 如申請專利範圍第19項之用於沉積金屬摻雜非晶碳硬遮罩膜的基板處理系統,其中該烴前驅物氣體包含CxHy,其中x為從2至10的整數,而y為從2至24的整數。
- 如申請專利範圍第19項之用於沉積金屬摻雜非晶碳硬遮罩膜的基板處理系統,其中該烴前驅物氣體係選自由甲烷、乙炔、乙烯、丙烯、丁烷、環己烷、苯、或甲苯所構成之群組。
- 如申請專利範圍第19項之用於沉積金屬摻雜非晶碳硬遮罩膜的基板處理系統,其中該金屬型前驅物氣體包含六氟化鎢,該烴前驅物氣體包含甲烷,而該載氣包含分子氫。
- 一種用於沉積金屬摻雜非晶矽硬遮罩膜的基板處理系統,包含:處理腔室,其包含配置以支撐基板的基板支撐體;氣體供應系統,其配置以選擇性地將製程氣體供應至該處理腔室;電漿產生器,其配置以選擇性地在該處理腔室中產生電漿或將電漿供應至該處理腔室;控制器,其配置以控制該氣體供應系統及該電漿產生器,且配置以進行下列操作:將載氣供應至該處理腔室;將矽前驅物氣體供應至該處理腔室; 將金屬型前驅物氣體供應至該處理腔室;控制該電漿產生器以在該處理腔室中產生電漿或將電漿供應至該處理腔室;及將金屬摻雜非晶矽硬遮罩膜沉積於該基板上。
- 如申請專利範圍第29項之用於沉積金屬摻雜非晶矽硬遮罩膜的基板處理系統,其中該處理腔室包含電漿輔助化學氣相沉積(PECVD,plasma enhanced chemical vapor deposition)處理腔室。
- 如申請專利範圍第29項之用於沉積金屬摻雜非晶矽硬遮罩膜的基板處理系統,其中該金屬型前驅物氣體包含金屬鹵化物前驅物氣體。
- 如申請專利範圍第31項之用於沉積金屬摻雜非晶矽硬遮罩膜的基板處理系統,其中該金屬鹵化物前驅物氣體係選自由WFa、TiClb、WClc、HfCld、及TaCle所構成之群組,其中a、b、c、d、及e為大於或等於1的整數。
- 如申請專利範圍第29項之用於沉積金屬摻雜非晶矽硬遮罩膜的基板處理系統,其中該金屬型前驅物氣體包含四(二甲基胺基)鈦(TDMAT)前驅物氣體。
- 如申請專利範圍第29項之用於沉積金屬摻雜非晶矽硬遮罩膜的基板處理系統,其中該金屬型前驅物氣體包含雙(三級丁基亞胺基)-雙-(二甲基胺基)鎢(BTBMW)前驅物氣體。
- 如申請專利範圍第29項之用於沉積金屬摻雜非晶矽硬遮罩膜的基板處理系統,其中該載氣係選自由分子氫(H2)、氬(Ar)、分子氮(N2)、氦(He)、及/或其組合所構成之群組。
- 如申請專利範圍第29項之用於沉積金屬摻雜非晶矽硬遮罩膜的基板處理系統,其中該矽前驅物氣體係選自由矽烷及四乙氧基矽烷所構成之群組。
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CN105845551B (zh) | 2021-01-01 |
JP2016166405A (ja) | 2016-09-15 |
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US9520295B2 (en) | 2016-12-13 |
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