CN105716751A - Diffused silicon pressure sensor - Google Patents
Diffused silicon pressure sensor Download PDFInfo
- Publication number
- CN105716751A CN105716751A CN201610056234.7A CN201610056234A CN105716751A CN 105716751 A CN105716751 A CN 105716751A CN 201610056234 A CN201610056234 A CN 201610056234A CN 105716751 A CN105716751 A CN 105716751A
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- China
- Prior art keywords
- electrode
- silicon ring
- silicon
- out wire
- pressure sensor
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
A diffused silicon pressure sensor comprises an electrode a, a leading-out wire a, a diffused type resistor, a leading-out wire b, an electrode b, a monocrystalline silicone diagram and a silicon ring, wherein the silicon ring surrounds the monocrystalline silicone diagram, the electrode a and the electrode b are connected to the upper two sides of the silicon ring respectively, the electrode a and the electrode b are also connected with the diffused type resistor which is placed on the silicon ring, the leading out wire a is connected onto the electrode a, and the leading out wire b is connected onto the electrode b; and a ceramic substrate is arranged under the silicon ring and connected to the silicon ring via a ceramic bonding agent. The ceramic substrate is characterized by high elasticity and resistance to corrosion, wearing, impact and vibration, so that the temperature and time stabilities are improved, and the service life of products is prolonged.
Description
Technical field
The present invention relates to a kind of diffusion silicon pressure sensor.
Background technology
Pressure transducer is a kind of sensor the most commonly used in industrial practice, it is widely used in various industry automatic control environment, relate to numerous industries such as water conservancy and hydropower, railway traffic, intelligent building, production automatic control, Aero-Space, military project, petrochemical industry, oil well, electric power, boats and ships, lathe, pipeline, just simply introduce some sensors principle and application thereof below.Separately there is medical pressure sensor.
Pressure transducer, based on the device of frame for movement type, indicates pressure with the deformation of flexible member, but this physical dimension is big, quality weight, it is impossible to provide electricity output.Along with the development of semiconductor technology, semiconductor pressure sensor also arises at the historic moment.It is characterized in that volume is little, light weight, accuracy high, good temp characteristic.Particular with the development of MEMS technology, semiconductor transducer is towards miniaturization, and its power consumption is little, reliability is high.
The pressure of diffusion silicon pressure sensor measured medium directly acts on (rustless steel or pottery) on the diaphragm of sensor, diaphragm is made to produce the micrometric displacement being directly proportional to pressure medium, the resistance value making sensor changes, detect this change with electronic circuit, and change the output one the canonical measure signal corresponding to this pressure.
Summary of the invention
It is an object of the invention to: provide a kind of simple in construction convenient, the diffusion silicon pressure sensor of long service life.
Present invention provide the technical scheme that
A kind of diffusion silicon pressure sensor, including electrode a, lead-out wire a, diffusion type resistance, lead-out wire b, electrode b, monocrystal silicon diaphragm and silicon ring, described silicon ring is surrounded on monocrystal silicon diaphragm surrounding, above described silicon ring, both sides are connected to electrode a and electrode b, described electrode a and electrode b is connected to diffusion type resistance and is positioned at above silicon ring, described electrode a is connected to lead-out wire a, described electrode b is connected to lead-out wire b, it is connected to ceramic substrate below described silicon ring, and silicon ring is connected by ceramic bonding agent with ceramic substrate.
The medicine have the advantages that
By ceramic substrate high resiliency, anticorrosive, resistance to wear, the characteristic of shock resistance and vibration, improve temperature stability and time stability, extend the life-span of product.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Wherein: 1, electrode a, 2, lead-out wire a, 3, diffusion type resistance, 4, lead-out wire b, 5, electrode b, 6, monocrystal silicon diaphragm, 7, silicon ring, 8, ceramic bonding agent, 9, ceramic substrate.
Detailed description of the invention
A kind of diffusion silicon pressure sensor, including electrode 1a, lead-out wire 2a, diffusion type resistance 3, lead-out wire 4b, electrode 5b, monocrystal silicon diaphragm 6 and silicon ring 7, silicon ring 7 is surrounded on monocrystal silicon diaphragm 6 surrounding, above silicon ring 7, both sides are connected to electrode 1a and electrode 5b, it is connected to diffusion type resistance 3 between electricity 1 pole a and electrode 4b and is positioned at above silicon ring 7, electrode 1a is connected to lead-out wire 2a, electrode 5b is connected to lead-out wire 4b, it is connected to ceramic substrate 9 below silicon ring, and silicon ring 7 is connected by ceramic bonding agent 8 with ceramic substrate 9.By ceramic substrate high resiliency, anticorrosive, resistance to wear, the characteristic of shock resistance and vibration, improve temperature stability and time stability, extend the life-span of product, it is easy to promote.
Claims (1)
1. a diffusion silicon pressure sensor, including electrode a, lead-out wire a, diffusion type resistance, lead-out wire b, electrode b, monocrystal silicon diaphragm and silicon ring, described silicon ring is surrounded on monocrystal silicon diaphragm surrounding, above described silicon ring, both sides are connected to electrode a and electrode b, described electrode a and electrode b is connected to diffusion type resistance and is positioned at above silicon ring, described electrode a is connected to lead-out wire a, described electrode b is connected to lead-out wire b, it is characterized in that: below described silicon ring, be connected to ceramic substrate, and silicon ring is connected by ceramic bonding agent with ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610056234.7A CN105716751A (en) | 2016-01-27 | 2016-01-27 | Diffused silicon pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610056234.7A CN105716751A (en) | 2016-01-27 | 2016-01-27 | Diffused silicon pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105716751A true CN105716751A (en) | 2016-06-29 |
Family
ID=56155105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610056234.7A Pending CN105716751A (en) | 2016-01-27 | 2016-01-27 | Diffused silicon pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105716751A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060137456A1 (en) * | 2004-12-27 | 2006-06-29 | Samhita Dasgupta | Static and dynamic pressure sensor |
| CN200989838Y (en) * | 2006-03-03 | 2007-12-12 | *** | Pressure sensor |
| CN102401715A (en) * | 2010-08-23 | 2012-04-04 | 霍尼韦尔国际公司 | Pressure sensor |
-
2016
- 2016-01-27 CN CN201610056234.7A patent/CN105716751A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060137456A1 (en) * | 2004-12-27 | 2006-06-29 | Samhita Dasgupta | Static and dynamic pressure sensor |
| CN200989838Y (en) * | 2006-03-03 | 2007-12-12 | *** | Pressure sensor |
| CN102401715A (en) * | 2010-08-23 | 2012-04-04 | 霍尼韦尔国际公司 | Pressure sensor |
Non-Patent Citations (2)
| Title |
|---|
| 森村正直等: "《传感器工程学》", 31 August 1988, 大连工学院出版社 * |
| 王雅芳等: "《传感器原理与实用技术》", 31 July 2014, 机械工业出版社 * |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160629 |
|
| RJ01 | Rejection of invention patent application after publication |