CN203191141U - Silicon piezoresistive MEMS pressure transducer for gas and liquid pressure measurement - Google Patents
Silicon piezoresistive MEMS pressure transducer for gas and liquid pressure measurement Download PDFInfo
- Publication number
- CN203191141U CN203191141U CN 201320236428 CN201320236428U CN203191141U CN 203191141 U CN203191141 U CN 203191141U CN 201320236428 CN201320236428 CN 201320236428 CN 201320236428 U CN201320236428 U CN 201320236428U CN 203191141 U CN203191141 U CN 203191141U
- Authority
- CN
- China
- Prior art keywords
- silicon
- monocrystalline silicon
- vitreum
- measurement gas
- pressure transducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Disclosed is a silicon piezoresistive MEMS pressure transducer for gas and liquid pressure measurement and the pressure transducer belongs to the technical field of pressure transducer. The silicon piezoresistive MEMS pressure transducer for gas and liquid pressure measurement solves the problem that existing MEME gas pressure transducers have poor oxidization resistance and corrosion resistance. The transducer is axially symmetrical in structure. A first glass body of the transducer is cylindrical in structure, and a silicone-rubber thin film covers and is fixed on the lower end face of the first glass body; a monocrystal silicon is cylindrical in shape and the opening side end surface of the monocrystal silicon is fixedly connected with the upper end face of the first glass body; and the enclosure space formed by the silicone-rubber thin film, the monocrystal silicon and the first glass body is a stress cup. A second glass body is cylindrical in shape; the outer side of the bottom of the cylindrical monocrystal silicon is fixedly connected with the opening side end face of the second glass body; the enclosed space formed between the monocrystal silicon and the second glass body is a vacuum cavity; a resistance strain gauge bridge circuit is generated on the outer side surface of the bottom of the cylindrical monocrystal silicon after a photoetching processing. The monocrystal silicon, the first glass body and the second glass body are coaxial. The silicon piezoresistive MEMS pressure transducer can be used for gas and liquid pressure measurement.
Description
Technical field
The utility model belongs to the pressure sensor application technical field.
Background technology
Microminiaturized, intelligent and integrated MEMS (micro electro mechanical system) (MEMS) development in recent years is swift and violent, has been widely used in fields such as IT, Aeronautics and Astronautics, biomedicine, forms flourish new high-tech industry.The MEMS gas pressure sensor can carry out high precision, produce in enormous quantities cheaply with similar integrated circuit (IC) designing technique and manufacturing process.Traditional mechanical quantity pressure transducer is based on metallic elastic body stress deformation, is exported to the electric weight conversion by the mechanical quantity elastic deformation.With respect to traditional mechanical quantity sensor, the size of MEMS pressure transducer is littler, and cost is lower.But the MEMS gas pressure sensor directly contacted with gas when measuring, so its inoxidizability and corrosion resistance are relatively poor, so the MEMS gas pressure sensor should not measure wet gas and corrosive gas for a long time, and this has just caused the limitation of its working environment.
The utility model content
The utility model has proposed to be used for the silicon piezoresistance type MEMS pressure transducer of measurement gas and fluid pressure in order to solve the problem of existing MEMS gas pressure sensor inoxidizability and corrosion-resistant.
The novel silicon piezoresistance type MEMS pressure transducer that two kinds of structures are provided of this use:
Scheme one: the silicon piezoresistance type MEMS pressure transducer that is used for measurement gas and fluid pressure, this device is axially symmetric structure, it comprises silicon rubber film, monocrystalline silicon, first vitreum, secondary vitreous and resistance strain gage bridge diagram, first vitreum is cylindrical structural, silicon rubber film covers and is fixed on this first Vitrea lower surface, monocrystalline silicon is drum shape, fixedlying connected with the first Vitrea upper surface of the end face of monocrystalline silicon opening one side, silicon rubber film, it is the stress cup that monocrystalline silicon and first vitreum form airtight space, secondary vitreous is drum shape, fixedly connected with the opening side end face of secondary vitreous in the outside, the bucket end of monocrystalline silicon 2, the confined space that forms between monocrystalline silicon and the secondary vitreous is vacuum chamber, the bucket end lateral surface of monocrystalline silicon generates resistance strain gage bridge diagram, monocrystalline silicon through photoetching, first vitreum and secondary vitreous are coaxial.
Scheme two: the silicon piezoresistance type MEMS pressure transducer that is used for measurement gas and fluid pressure, this device is mirror symmetrical structure, it comprises silicon rubber film, monocrystalline silicon, first vitreum, secondary vitreous and resistance strain gage bridge diagram, first vitreum is rectangle shape structure, silicon rubber film covers and is fixed on this first Vitrea lower surface, monocrystalline silicon is the rectangle that has groove, fixedlying connected with the first Vitrea upper surface of the end face of monocrystalline silicon opening one side, silicon rubber film, it is the stress cup that monocrystalline silicon and first vitreum form airtight space, secondary vitreous is the rectangle that has groove, fixedly connected with the opening side end face of secondary vitreous in the outside, bottom surface of monocrystalline silicon, the confined space that forms between monocrystalline silicon and the secondary vitreous is vacuum chamber, the bucket end lateral surface of monocrystalline silicon generates resistance strain gage bridge diagram, monocrystalline silicon through photoetching, first vitreum and secondary vitreous are coaxial.
The utility model is owing to increase silicon rubber film, dampness to be measured and corrosive gas have effectively been intercepted, inoxidizability and the corrosion resistance of silicon piezoresistance type MEMS gas pressure sensor have been improved, performance difference according to used silicon rubber film, the degree of its inoxidizability and corrosion resistance is also different, also owing to increase silicon rubber film, the utility model can also be measured has volatile corrosive liquids and liquid such as various solution and water, and the very wide scope of application is arranged.
Description of drawings
Fig. 1 is the cut-open view of the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment one;
Fig. 2 is the circuit diagram of embodiment one described resistance strain gage bridge diagram, and wherein arrow is represented the direction of voltage drop;
Fig. 3 measures the constitutional diagram of fluid pressure for using the utility model, and wherein arrow is represented the pressure direction of external atmosphere pressure;
Fig. 4 is the vertical view of embodiment 11 described monocrystalline silicon;
Fig. 5 is the vertical view of embodiment two described monocrystalline silicon.
Embodiment
Embodiment one: present embodiment is described referring to Fig. 1.The described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of present embodiment, this device is axially symmetric structure, it comprises silicon rubber film 1, monocrystalline silicon 2, first vitreum 3, secondary vitreous 4 and resistance strain gage bridge diagram 5, first vitreum 3 is cylindrical structural, silicon rubber film 1 covers and is fixed on the lower surface of this first vitreum 3, monocrystalline silicon 2 is drum shape, fixedly connected in the upper surface with first vitreum 3 of the end face of monocrystalline silicon 2 openings one side, silicon rubber film 1, it is stress cup B that monocrystalline silicon 2 and first vitreum 3 form airtight space, secondary vitreous 4 is drum shape, fixedly connected with the opening side end face of secondary vitreous 4 in the outside, the bucket end of monocrystalline silicon 2, the confined space that forms between monocrystalline silicon 2 and the secondary vitreous 4 is vacuum chamber A, the bucket end lateral surface of monocrystalline silicon 2 generates resistance strain gage bridge diagram 5, monocrystalline silicon 2 through photoetching, first vitreum 3 and secondary vitreous 4 are coaxial.
Embodiment two: present embodiment is described referring to Fig. 5, present embodiment is the further restriction to the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment one, the monocrystalline silicon 2 of described drum shape is to use the etching technics processing and fabricating, and the bottom of the monocrystalline silicon 2 of drum shape is monocrystalline silicon thin film.
Embodiment three: present embodiment is to the further restriction of the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment two, satisfies relation between the stress value σ of the external diameter R of the thickness h of described monocrystalline silicon thin film, monocrystalline silicon 2, stress cup B, the pressure range p of measured matter
Embodiment four: present embodiment is the further restriction to the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment two, and the height of described monocrystalline silicon 2 is 8 times of thickness of monocrystalline silicon thin film.
Embodiment five: present embodiment is the further restriction to the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment two, and the height of described secondary vitreous 4 is 3 to 4 times of thickness of monocrystalline silicon thin film.
Embodiment six: present embodiment is the further restriction to the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment one, the inner nitrogen of filling of described stress cup B.
Embodiment seven: present embodiment is that the thickness of described silicon rubber film 1 is that 10 μ m are to 25 μ m to the further restriction of the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment one.
Embodiment eight: present embodiment is that the height of described first vitreum 3 is identical with the height of monocrystalline silicon 2 to the further restriction of the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment one.
Embodiment nine: present embodiment is that described first vitreum 3 is provided with shoulder with the inwall that monocrystalline silicon 2 is connected an end to the further restriction of the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment one.
Embodiment ten: the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of present embodiment, this device is mirror symmetrical structure, it comprises silicon rubber film 1, monocrystalline silicon 2, first vitreum 3, secondary vitreous 4 and resistance strain gage bridge diagram 5, first vitreum 3 is rectangle shape structure, silicon rubber film 1 covers and is fixed on the lower surface of this first vitreum 3, monocrystalline silicon 2 is for having the rectangle of groove, fixedly connected in the upper surface with first vitreum 3 of the end face of monocrystalline silicon 2 openings one side, silicon rubber film 1, it is stress cup B that monocrystalline silicon 2 and first vitreum 3 form airtight space, secondary vitreous 4 is for having the rectangle of groove, fixedly connected with the opening side end face of secondary vitreous 4 in the outside, bottom surface of monocrystalline silicon 2, the confined space that forms between monocrystalline silicon 2 and the secondary vitreous 4 is vacuum chamber A, the bucket end lateral surface of monocrystalline silicon 2 generates resistance strain gage bridge diagram 5, monocrystalline silicon 2 through photoetching, first vitreum 3 and secondary vitreous 4 are coaxial.
Embodiment 11: present embodiment is described referring to Fig. 4, present embodiment is the further restriction to the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment two, described for the monocrystalline silicon 2 of rectangle that has groove is to use the etching technics processing and fabricating, its bottom is monocrystalline silicon thin film.
Embodiment 12: present embodiment is to the further restriction of the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment 11, satisfies relation between the stress value σ of the long l of the thickness h of described monocrystalline silicon thin film, monocrystalline silicon 2, stress cup B, the pressure range p of measured matter
Embodiment 13: present embodiment is the further restriction to the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment 11, and the height of described monocrystalline silicon 2 is 8 times of thickness of monocrystalline silicon thin film.
Embodiment 14: present embodiment is the further restriction to the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment 11, and the height of described secondary vitreous 4 is 3 to 4 times of thickness of monocrystalline silicon thin film.
Embodiment 15: present embodiment is the further restriction to the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment ten, the inner nitrogen of filling of described stress cup B.
Embodiment 16: present embodiment is that the thickness of described silicon rubber film 1 is that 10 μ m are to 25 μ m to the further restriction of the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment ten.
Embodiment 17: present embodiment is that the height of described first vitreum 3 is identical with the height of monocrystalline silicon 2 to the further restriction of the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment ten.
Embodiment 18: present embodiment is that described first vitreum 3 is provided with shoulder with the inwall that monocrystalline silicon 2 is connected an end to the further restriction of the described silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure of embodiment ten.
Principle of work:
The two-layer up and down of silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure described in the utility model is vitreum, and the centre is monocrystalline silicon 2, and a stress cup B is made at monocrystalline silicon 2 middle parts, and a vacuum chamber A is arranged at its stress monocrystalline silicon 2 tops.Monocrystalline silicon contacts this one side through the resistance strain gage bridge diagram of photoetching generation as Fig. 2 with vacuum chamber A.Outside orlop glass, do the high airtight silicon rubber film 1 of one deck deformation nature, make among the stress cup B and form confined space, wherein the nitrogen that approaches very much with molal weight and air is filled, and wherein pressure and 1 atmospheric pressure approach.Ambient pressure is greater than among the stress cup B during pressure, and the silicon rubber film that deformation nature is high will be recessed to vacuum chamber A one side, gas among the extrusion stress cup B, so monocrystalline silicon can be because slightly upwards being heaved by the external force effect, the generation elastic deformation.When ambient pressure less than stress cup B in during pressure, the silicon rubber film that deformation nature is high will be given prominence to laterally, air pressure reduces among the stress cup B, and then monocrystalline silicon deformation diminishes.Therefore resistance variations takes place because different deformation takes place in four resistance strain gages, destroys original whiston bridge circuit balance, the voltage signal that electric bridge output is directly proportional with pressure.
Measuring principle: at first measure ambient atmosphere pressure with the silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure described in the utility model, measure atmospheric pressure and liquid pressure in the sealed tube D then, as shown in Figure 3, wherein C represents the silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure described in the utility model, so through calculating the liquid pressure of the liquid E that just can draw the measuring tube bottom.
Claims (10)
1. the silicon piezoresistance type MEMS pressure transducer that is used for measurement gas and fluid pressure, it is characterized in that, this device is axially symmetric structure, it comprises silicon rubber film (1), monocrystalline silicon (2), first vitreum (3), secondary vitreous (4) and resistance strain gage bridge diagram (5), first vitreum (3) is cylindrical structural, silicon rubber film (1) covers and is fixed on the lower surface of this first vitreum (3), monocrystalline silicon (2) is drum shape, fixedly connected in the upper surface with first vitreum (3) of the end face of monocrystalline silicon (2) opening one side, silicon rubber film (1), it is stress cup (B) that monocrystalline silicon (2) and first vitreum (3) form airtight space, secondary vitreous (4) is drum shape, fixedly connected with the opening side end face of secondary vitreous (4) in the outside, the bucket end of monocrystalline silicon (2), the confined space that forms between monocrystalline silicon (2) and the secondary vitreous (4) is vacuum chamber (A), the bucket end lateral surface of monocrystalline silicon (2) generates resistance strain gage bridge diagram (5), monocrystalline silicon (2) through photoetching, first vitreum (3) and secondary vitreous (4) are coaxial.
2. the silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure according to claim 1, it is characterized in that, the monocrystalline silicon of described drum shape (2) is to use the etching technics processing and fabricating, and the bottom of the monocrystalline silicon of drum shape (2) is monocrystalline silicon thin film.
3. the silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure according to claim 1, it is characterized in that, satisfy relation between the pressure range p of the external diameter R of the thickness h of described monocrystalline silicon thin film, monocrystalline silicon (2), the stress value σ of stress cup (B), measured matter
4. the silicon piezoresistance type MEMS pressure transducer that is used for measurement gas and fluid pressure, this device is mirror symmetrical structure, it is characterized in that, it comprises silicon rubber film (1), monocrystalline silicon (2), first vitreum (3), secondary vitreous (4) and resistance strain gage bridge diagram (5), first vitreum (3) is rectangle shape structure, silicon rubber film (1) covers and is fixed on the lower surface of this first vitreum (3), monocrystalline silicon (2) is for having the rectangle of groove, fixedly connected in the upper surface with first vitreum (3) of the end face of monocrystalline silicon (2) opening one side, silicon rubber film (1), it is stress cup (B) that monocrystalline silicon (2) and first vitreum (3) form airtight space, secondary vitreous (4) is for having the rectangle of groove, fixedly connected with the opening side end face of secondary vitreous (4) in the outside, bottom surface of monocrystalline silicon (2), the confined space that forms between monocrystalline silicon (2) and the secondary vitreous (4) is vacuum chamber (A), the bucket end lateral surface of monocrystalline silicon (2) generates resistance strain gage bridge diagram (5), monocrystalline silicon (2) through photoetching, first vitreum (3) and secondary vitreous (4) are coaxial.
5. the silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure according to claim 4 is characterized in that, described for the monocrystalline silicon (2) of rectangle that has groove is to use the etching technics processing and fabricating, its bottom is monocrystalline silicon thin film.
6. the silicon piezoresistance type MEMS pressure transducer for measurement gas and fluid pressure according to claim 5, it is characterized in that, satisfy relation between the pressure range p of the long l of the thickness h of described monocrystalline silicon thin film, monocrystalline silicon (2), the stress value σ of stress cup (B), measured matter
7. according to claim 2 or 5 described silicon piezoresistance type MEMS pressure transducers for measurement gas and fluid pressure, it is characterized in that the height of described monocrystalline silicon (2) is 8 times of thickness of monocrystalline silicon thin film.
8. according to claim 1 or 4 described silicon piezoresistance type MEMS pressure transducers for measurement gas and fluid pressure, it is characterized in that the inner nitrogen of filling of described stress cup (B).
9. according to claim 1 or 4 described silicon piezoresistance type MEMS pressure transducers for measurement gas and fluid pressure, it is characterized in that the thickness of described silicon rubber film (1) is that 10 μ m are to 25 μ m.
10. according to claim 1 or 4 described silicon piezoresistance type MEMS pressure transducers for measurement gas and fluid pressure, it is characterized in that described first vitreum (3) is provided with shoulder with the inwall that monocrystalline silicon (2) is connected an end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320236428 CN203191141U (en) | 2013-05-03 | 2013-05-03 | Silicon piezoresistive MEMS pressure transducer for gas and liquid pressure measurement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320236428 CN203191141U (en) | 2013-05-03 | 2013-05-03 | Silicon piezoresistive MEMS pressure transducer for gas and liquid pressure measurement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203191141U true CN203191141U (en) | 2013-09-11 |
Family
ID=49107994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320236428 Expired - Fee Related CN203191141U (en) | 2013-05-03 | 2013-05-03 | Silicon piezoresistive MEMS pressure transducer for gas and liquid pressure measurement |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203191141U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103731771A (en) * | 2013-12-20 | 2014-04-16 | 苏州恒听电子有限公司 | Corrosion-resistant telephone receiver |
| CN103808387A (en) * | 2014-01-20 | 2014-05-21 | 哈尔滨博强机器人技术有限公司 | Automatic record retention device for refueling of automobile fuel tank |
| CN108955993A (en) * | 2018-05-23 | 2018-12-07 | 易彩科技（杭州）有限责任公司 | A kind of ductwork pressure transmitter of super low-power consumption |
| CN109642841A (en) * | 2016-08-25 | 2019-04-16 | 株式会社电装 | Pressure sensor |
| ES2811679A1 (en) * | 2019-09-12 | 2021-03-12 | Komsenso Soluciones Slu | SYSTEM FOR THE PRECISE MEASUREMENT OF HYDROSTATIC PRESSURE AND OTHER VARIABLES OF A LIQUID CONTAINED INSIDE A TANK (Machine-translation by Google Translate, not legally binding) |
-
2013
- 2013-05-03 CN CN 201320236428 patent/CN203191141U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103731771A (en) * | 2013-12-20 | 2014-04-16 | 苏州恒听电子有限公司 | Corrosion-resistant telephone receiver |
| CN103808387A (en) * | 2014-01-20 | 2014-05-21 | 哈尔滨博强机器人技术有限公司 | Automatic record retention device for refueling of automobile fuel tank |
| CN109642841A (en) * | 2016-08-25 | 2019-04-16 | 株式会社电装 | Pressure sensor |
| CN108955993A (en) * | 2018-05-23 | 2018-12-07 | 易彩科技（杭州）有限责任公司 | A kind of ductwork pressure transmitter of super low-power consumption |
| ES2811679A1 (en) * | 2019-09-12 | 2021-03-12 | Komsenso Soluciones Slu | SYSTEM FOR THE PRECISE MEASUREMENT OF HYDROSTATIC PRESSURE AND OTHER VARIABLES OF A LIQUID CONTAINED INSIDE A TANK (Machine-translation by Google Translate, not legally binding) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203191141U (en) | Silicon piezoresistive MEMS pressure transducer for gas and liquid pressure measurement | |
| CN205785644U (en) | MEMS minute-pressure pressure transducer | |
| CN103941041B (en) | A kind of single mass three-shaft mems accelerometer of three-frame structure | |
| CN103983395B (en) | A kind of micropressure sensor and preparation thereof and detection method | |
| CN103105248A (en) | Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor | |
| CN104729784A (en) | Beam and groove combined stepped island film micropressure sensor chip and manufacturing method thereof | |
| CN104764547A (en) | Relief-type island film stress concentration structure micro-pressure sensor chip and preparing method | |
| JP2012233872A (en) | Semiconductor pressure sensor and manufacturing method thereof | |
| CN212807437U (en) | Core body of differential pressure sensor | |
| CN103674355A (en) | Suspended force-sensitive sensor chip capable of eliminating encapsulation stress and manufacture method thereof | |
| CN106248267B (en) | Miniature three-dimensional soil pressure cell and its method of testing | |
| CN215448264U (en) | Composite diaphragm type MEMS pressure sensor | |
| CN103837288A (en) | Piezoresistive transducer with low thermal noise | |
| CN203178006U (en) | Pressure transducer packaging structure | |
| CN103837290B (en) | High-precision capacitance pressure transducer, | |
| CN207636232U (en) | A kind of strain-type differential pressure pickup | |
| CN101750173A (en) | Piezoelectric type six-dimensional force sensor | |
| CN104316227B (en) | A kind of two-sided pressure sensing type soil pressure sensor | |
| CN102175305A (en) | Single chip integrated trivector vibration sensor | |
| CN104236766A (en) | Double-suspension-type force sensor chip with packaging stress and temperature drift self-compensation function and manufacturing method | |
| CN104502003A (en) | Silica glass mosaic structure micromachine differential capacitance type pressure gauge | |
| CN102602879A (en) | Two-step corrosion manufacturing method for resonant beam and support beam of resonance type accelerometer | |
| CN201600168U (en) | Anti-condensation static-pressure type liquid level transmitter | |
| CN103017948A (en) | Piezoresistive type pressure sensor | |
| CN102435381A (en) | Liquid-state metallic sodium experiment loop pressure sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130911 Termination date: 20150503 |
|
| EXPY | Termination of patent right or utility model |