CN105632943A - 芯片的超薄嵌入式封装方法及封装体 - Google Patents
芯片的超薄嵌入式封装方法及封装体 Download PDFInfo
- Publication number
- CN105632943A CN105632943A CN201610088006.8A CN201610088006A CN105632943A CN 105632943 A CN105632943 A CN 105632943A CN 201610088006 A CN201610088006 A CN 201610088006A CN 105632943 A CN105632943 A CN 105632943A
- Authority
- CN
- China
- Prior art keywords
- chip
- carrier band
- window
- matrix
- ultra
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 31
- 239000011159 matrix material Substances 0.000 claims description 79
- 238000012856 packing Methods 0.000 claims description 30
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 238000009434 installation Methods 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000000053 physical method Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 6
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Packaging Frangible Articles (AREA)
- Packages (AREA)
Abstract
Description
Claims (13)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610088006.8A CN105632943B (zh) | 2016-02-17 | 2016-02-17 | 芯片的超薄嵌入式封装方法 |
PCT/CN2016/106615 WO2017140138A1 (zh) | 2016-02-17 | 2016-11-21 | 芯片的超薄嵌入式封装方法及封装体 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610088006.8A CN105632943B (zh) | 2016-02-17 | 2016-02-17 | 芯片的超薄嵌入式封装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105632943A true CN105632943A (zh) | 2016-06-01 |
CN105632943B CN105632943B (zh) | 2018-05-18 |
Family
ID=56047744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610088006.8A Active CN105632943B (zh) | 2016-02-17 | 2016-02-17 | 芯片的超薄嵌入式封装方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN105632943B (zh) |
WO (1) | WO2017140138A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017140138A1 (zh) * | 2016-02-17 | 2017-08-24 | 上海伊诺尔信息技术有限公司 | 芯片的超薄嵌入式封装方法及封装体 |
CN107995392A (zh) * | 2017-11-28 | 2018-05-04 | 信利光电股份有限公司 | 一种多摄像头模组及其加工方法 |
CN108012055A (zh) * | 2017-11-28 | 2018-05-08 | 信利光电股份有限公司 | 一种多摄像头模组 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107612226B (zh) * | 2017-10-31 | 2024-05-03 | 珠海格力电器股份有限公司 | 表面贴装结构、表面贴装方法、电机及表面贴装芯片 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1302455A (zh) * | 1998-05-07 | 2001-07-04 | 美国3M公司 | 层叠的集成电路封装 |
CN101315939A (zh) * | 2007-05-30 | 2008-12-03 | 育霈科技股份有限公司 | 具有晶粒接收开孔的芯片尺寸影像传感器及其制造方法 |
CN101752338A (zh) * | 2008-12-11 | 2010-06-23 | 三星电子株式会社 | 球栅阵列封装结构及其封装工艺 |
CN102903682A (zh) * | 2011-07-28 | 2013-01-30 | 株式会社吉帝伟士 | 半导体器件、通过垂直层叠半导体器件配置的半导体模块结构及其制造方法 |
CN103779319A (zh) * | 2012-10-19 | 2014-05-07 | 英飞凌科技股份有限公司 | 具有集成天线的半导体封装及其形成方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013002938A (ja) * | 2011-06-16 | 2013-01-07 | Seiko Epson Corp | センサーデバイス、およびその製造方法 |
CN105632943B (zh) * | 2016-02-17 | 2018-05-18 | 上海伊诺尔信息技术有限公司 | 芯片的超薄嵌入式封装方法 |
-
2016
- 2016-02-17 CN CN201610088006.8A patent/CN105632943B/zh active Active
- 2016-11-21 WO PCT/CN2016/106615 patent/WO2017140138A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1302455A (zh) * | 1998-05-07 | 2001-07-04 | 美国3M公司 | 层叠的集成电路封装 |
CN101315939A (zh) * | 2007-05-30 | 2008-12-03 | 育霈科技股份有限公司 | 具有晶粒接收开孔的芯片尺寸影像传感器及其制造方法 |
CN101752338A (zh) * | 2008-12-11 | 2010-06-23 | 三星电子株式会社 | 球栅阵列封装结构及其封装工艺 |
CN102903682A (zh) * | 2011-07-28 | 2013-01-30 | 株式会社吉帝伟士 | 半导体器件、通过垂直层叠半导体器件配置的半导体模块结构及其制造方法 |
CN103779319A (zh) * | 2012-10-19 | 2014-05-07 | 英飞凌科技股份有限公司 | 具有集成天线的半导体封装及其形成方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017140138A1 (zh) * | 2016-02-17 | 2017-08-24 | 上海伊诺尔信息技术有限公司 | 芯片的超薄嵌入式封装方法及封装体 |
CN107995392A (zh) * | 2017-11-28 | 2018-05-04 | 信利光电股份有限公司 | 一种多摄像头模组及其加工方法 |
CN108012055A (zh) * | 2017-11-28 | 2018-05-08 | 信利光电股份有限公司 | 一种多摄像头模组 |
Also Published As
Publication number | Publication date |
---|---|
CN105632943B (zh) | 2018-05-18 |
WO2017140138A1 (zh) | 2017-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101675518B (zh) | 芯片上功率引线球栅阵列封装 | |
CN102344110B (zh) | 微机电***器件的方形扁平无引脚封装结构及方法 | |
CN103474406A (zh) | 一种aaqfn框架产品无铜扁平封装件及其制作工艺 | |
CN105632943A (zh) | 芯片的超薄嵌入式封装方法及封装体 | |
CN104022097A (zh) | 具有不锈钢引线框的ic封装 | |
CN102110672B (zh) | 芯片堆叠封装结构及其制造方法 | |
CN112736031A (zh) | 转接板及其制作方法,半导体器件及其制作方法 | |
CN103985720A (zh) | 太阳能供电的ic芯片 | |
CN104025273A (zh) | 连接装置、连接构造体的制造方法、芯片堆叠部件的制造方法及电子部件的安装方法 | |
CN107195555A (zh) | 一种芯片封装方法 | |
CN102412225A (zh) | Bga半导体封装及其制造方法 | |
CN101399261A (zh) | 半导体封装件及其制造方法 | |
CN103531549A (zh) | 半导体芯片封装结构和封装方法 | |
CN101432871A (zh) | 微波芯片支撑结构 | |
JP4952266B2 (ja) | デュアルインターフェースicカードとその製造方法、接触・非接触兼用icモジュール | |
CN206774530U (zh) | 用于双基岛封装电路的引线框架 | |
CN202297105U (zh) | 微机电***mems器件的方形扁平无引脚封装qfn结构 | |
CN102709199B (zh) | 包覆基板侧边的模封阵列处理方法 | |
CN201421841Y (zh) | 引线框架和封装件 | |
KR20080074468A (ko) | 초음파를 이용한 반도체 칩의 표면실장방법 | |
CN114899182A (zh) | 微型led器件的封装结构及方法以及显示装置 | |
CN108630626A (zh) | 无基板封装结构 | |
MX2008012339A (es) | Metodos para sujetar un montaje de circuito integrado de un chip invertido a un sustrato. | |
CN105590904A (zh) | 一种指纹识别多芯片封装结构及其制备方法 | |
CN203325892U (zh) | 一种晶圆颗粒 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190619 Address after: Room 301, Room 3, Building 2, No. 3576 Zhaolou Road, Minhang District, Shanghai, 201112 Patentee after: Shanghai Inore Information Electronics Co.,Ltd. Address before: Room 1001, No. 1628 Suzhao Road, Minhang District, Shanghai 201100 Patentee before: SHANGHAI ETERNAL INFORMATION TECHNOLOGY Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Room 301, Room 3, Building 2, No. 3576 Zhaolou Road, Minhang District, Shanghai, 201112 Patentee after: Lianxin (Shanghai) Microelectronics Technology Co.,Ltd. Country or region after: China Address before: Room 301, Room 3, Building 2, No. 3576 Zhaolou Road, Minhang District, Shanghai, 201112 Patentee before: Shanghai Inore Information Electronics Co.,Ltd. Country or region before: China |