CN105518880A - 半导体发光元件 - Google Patents

半导体发光元件 Download PDF

Info

Publication number: CN105518880A
Authority: CN; China
Prior art keywords: layer; semiconductor layer; type semiconductor; insulating barrier; light
Prior art date: 2013-08-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

CN201480047832.7A

Other languages

English (en)

Chinese (zh)

Inventor

杉山彻

月原政志

三好晃平

南部纱织

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Ushio Denki KK

Original Assignee

Ushio Denki KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2013-08-30

Filing date

2014-08-06

Publication date

2016-04-20

2014-08-06 Application filed by Ushio Denki KK filed Critical Ushio Denki KK

2016-04-20 Publication of CN105518880A publication Critical patent/CN105518880A/zh

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 222
239000000758 substrate Substances 0.000 claims abstract description 66
230000004888 barrier function Effects 0.000 claims description 117
150000004767 nitrides Chemical class 0.000 claims description 8
238000000605 extraction Methods 0.000 abstract description 22
239000010410 layer Substances 0.000 description 264
229910052718 tin Inorganic materials 0.000 description 29
238000000034 method Methods 0.000 description 22
229910052594 sapphire Inorganic materials 0.000 description 22
239000010980 sapphire Substances 0.000 description 22
230000015572 biosynthetic process Effects 0.000 description 21
230000000694 effects Effects 0.000 description 16
239000011241 protective layer Substances 0.000 description 16
239000000463 material Substances 0.000 description 15
239000011248 coating agent Substances 0.000 description 14
238000000576 coating method Methods 0.000 description 14
230000000052 comparative effect Effects 0.000 description 14
230000008569 process Effects 0.000 description 13
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
239000012535 impurity Substances 0.000 description 11
239000007789 gas Substances 0.000 description 8
JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
229910021529 ammonia Inorganic materials 0.000 description 6
229910052739 hydrogen Inorganic materials 0.000 description 6
239000001257 hydrogen Substances 0.000 description 6
238000004020 luminiscence type Methods 0.000 description 6
238000004519 manufacturing process Methods 0.000 description 6
229910052757 nitrogen Inorganic materials 0.000 description 6
239000012159 carrier gas Substances 0.000 description 5
229910052751 metal Inorganic materials 0.000 description 5
239000002184 metal Substances 0.000 description 5
229910002704 AlGaN Inorganic materials 0.000 description 4
239000011247 coating layer Substances 0.000 description 4
239000000284 extract Substances 0.000 description 4
229910004298 SiO 2 Inorganic materials 0.000 description 3
239000000956 alloy Substances 0.000 description 3
229910045601 alloy Inorganic materials 0.000 description 3
238000010276 construction Methods 0.000 description 3
229910052759 nickel Inorganic materials 0.000 description 3
229910052709 silver Inorganic materials 0.000 description 3
229910015363 Au—Sn Inorganic materials 0.000 description 2
229910017755 Cu-Sn Inorganic materials 0.000 description 2
229910017927 Cu—Sn Inorganic materials 0.000 description 2
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
230000004913 activation Effects 0.000 description 2
230000008859 change Effects 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
239000013256 coordination polymer Substances 0.000 description 2
238000005516 engineering process Methods 0.000 description 2
238000005530 etching Methods 0.000 description 2
230000008020 evaporation Effects 0.000 description 2
238000001704 evaporation Methods 0.000 description 2
238000009940 knitting Methods 0.000 description 2
238000010030 laminating Methods 0.000 description 2
239000011777 magnesium Substances 0.000 description 2
239000007769 metal material Substances 0.000 description 2
229910052750 molybdenum Inorganic materials 0.000 description 2
230000009467 reduction Effects 0.000 description 2
229910052711 selenium Inorganic materials 0.000 description 2
VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 2
229910052721 tungsten Inorganic materials 0.000 description 2
238000010792 warming Methods 0.000 description 2
102000000584 Calmodulin Human genes 0.000 description 1
108010041952 Calmodulin Proteins 0.000 description 1
229910002677 Pd–Sn Inorganic materials 0.000 description 1
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
229910010413 TiO 2 Inorganic materials 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
238000000137 annealing Methods 0.000 description 1
239000012298 atmosphere Substances 0.000 description 1
229910052790 beryllium Inorganic materials 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000007598 dipping method Methods 0.000 description 1
238000001312 dry etching Methods 0.000 description 1
238000005566 electron beam evaporation Methods 0.000 description 1
238000005538 encapsulation Methods 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
210000004276 hyalin Anatomy 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
239000012774 insulation material Substances 0.000 description 1
238000003698 laser cutting Methods 0.000 description 1
230000031700 light absorption Effects 0.000 description 1
229910052749 magnesium Inorganic materials 0.000 description 1
QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
239000012528 membrane Substances 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
238000013138 pruning Methods 0.000 description 1
229910052703 rhodium Inorganic materials 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000004332 silver Substances 0.000 description 1
238000005245 sintering Methods 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
229910052717 sulfur Inorganic materials 0.000 description 1
229910052714 tellurium Inorganic materials 0.000 description 1
238000001039 wet etching Methods 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Led Devices (AREA)

CN201480047832.7A 2013-08-30 2014-08-06 半导体发光元件 Pending CN105518880A (zh)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2013-180451		2013-08-30
JP2013180451A JP2015050293A (ja)	2013-08-30	2013-08-30	半導体発光素子
PCT/JP2014/070711 WO2015029727A1 (ja)	2013-08-30	2014-08-06	半導体発光素子

Publications (1)

Publication Number	Publication Date
CN105518880A true CN105518880A (zh)	2016-04-20

Family

ID=52586298

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CN201480047832.7A Pending CN105518880A (zh)	2013-08-30	2014-08-06	半导体发光元件

Country Status (5)

Country	Link
JP (1)	JP2015050293A (ja)
KR (1)	KR20160027168A (ja)
CN (1)	CN105518880A (ja)
TW (1)	TW201517311A (ja)
WO (1)	WO2015029727A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2018006535A (ja) *	2016-06-30	2018-01-11	ウシオ電機株式会社	半導体発光素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN101459209A (zh) *	2007-12-14	2009-06-17	台达电子工业股份有限公司	发光二极管装置及其制造方法
JP2010027643A (ja) *	2008-07-15	2010-02-04	Sharp Corp	窒化物半導体発光素子および窒化物半導体発光素子の製造方法
CN101645482B (zh) *	2008-08-05	2012-02-29	夏普株式会社	氮化物半导体发光元件及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH04207781A (ja)	1990-11-30	1992-07-29	Hitachi Plant Eng & Constr Co Ltd	監視装置
JP2976951B2 (ja)	1994-12-02	1999-11-10	日亜化学工業株式会社	窒化物半導体発光ダイオードを備えた表示装置
JP5493252B2 (ja) *	2007-06-28	2014-05-14	日亜化学工業株式会社	半導体発光素子
JP5725927B2 (ja) *	2010-05-18	2015-05-27	ソウルバイオシスカンパニーリミテッドＳｅｏｕｌＶｉｏｓｙｓＣｏ．，Ｌｔｄ．	高効率発光ダイオード及びその製造方法
EP2660882B1 (en) *	2010-12-28	2018-10-03	Nichia Corporation	Semiconductor light-emitting device
JP2012175040A (ja) *	2011-02-24	2012-09-10	Toshiba Corp	半導体発光素子及び発光装置
JP5776535B2 (ja) *	2011-12-16	2015-09-09	豊田合成株式会社	Ｉｉｉ族窒化物半導体発光素子

2013
- 2013-08-30 JP JP2013180451A patent/JP2015050293A/ja active Pending
2014
- 2014-07-04 TW TW103123142A patent/TW201517311A/zh unknown
- 2014-08-06 WO PCT/JP2014/070711 patent/WO2015029727A1/ja active Application Filing
- 2014-08-06 CN CN201480047832.7A patent/CN105518880A/zh active Pending
- 2014-08-06 KR KR1020167002853A patent/KR20160027168A/ko not_active Application Discontinuation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN101459209A (zh) *	2007-12-14	2009-06-17	台达电子工业股份有限公司	发光二极管装置及其制造方法
JP2010027643A (ja) *	2008-07-15	2010-02-04	Sharp Corp	窒化物半導体発光素子および窒化物半導体発光素子の製造方法
CN101645482B (zh) *	2008-08-05	2012-02-29	夏普株式会社	氮化物半导体发光元件及其制造方法

Also Published As

Publication number	Publication date
TW201517311A (zh)	2015-05-01
KR20160027168A (ko)	2016-03-09
JP2015050293A (ja)	2015-03-16
WO2015029727A1 (ja)	2015-03-05

Legal Events

Date	Code	Title	Description
2016-04-20	C06	Publication
2016-04-20	PB01	Publication
2016-05-18	C10	Entry into substantive examination
2016-05-18	SE01	Entry into force of request for substantive examination
2018-04-24	WD01	Invention patent application deemed withdrawn after publication	Application publication date: 20160420
2018-04-24	WD01	Invention patent application deemed withdrawn after publication

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