CN105390404A - 银基键合丝的制备方法 - Google Patents
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 65
- 239000004332 silver Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 17
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 51
- 239000000956 alloy Substances 0.000 claims abstract description 51
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000002808 molecular sieve Substances 0.000 claims abstract description 14
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 11
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- 238000004804 winding Methods 0.000 claims abstract description 6
- 229910002065 alloy metal Inorganic materials 0.000 claims abstract description 5
- 238000009749 continuous casting Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 22
- 238000002360 preparation method Methods 0.000 claims description 17
- 238000005491 wire drawing Methods 0.000 claims description 17
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000005266 casting Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
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- 241001226615 Asphodelus albus Species 0.000 claims description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 3
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 244000137852 Petrea volubilis Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
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- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L21/4889—Connection or disconnection of other leads to or from wire-like parts, e.g. wires
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
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Abstract
本发明公开了一种银基键合丝的制备方法,该银基键合丝是首先在纯度高于99.999%的Ag中添加2.0%-4.0%?Pd、3.0%-5.0%?Ce和4.0%-6.0%?Cu混合为合金基材,并通过对合金基材进行熔炼、拉丝、清洗、退火、绕线、包装等步骤制成,在熔炼过程中不需要加氮气保护,采用添加高温分子筛和反复抽真空进行除氧,同时通过多次反复熔炼使合金金属熔液完全熔合均匀,制得的银基键合丝一致性好,性能稳定,延伸率和拉伸强度高,确保了焊接质量和器件的可靠性和稳定性,并使整个生产工艺流畅,提高了生产效率,同时其还具有良好的抗氧化,导电性,成本适中,可广泛应用于IC、LED等电子封装领域。
Description
技术领域
本发明涉及键合丝加工技术领域,特别涉及一种银基键合丝的制备方法。
背景技术
键合丝作为半导体器件,大规模集成电路封装业的重要结构材料之一,
起联结硅片电极与引线框架的外部引出端子的作用,并传递芯片的电信号、散发芯片内产生的热量,是集成电路封装的关键材料,键合丝材料的质量好坏直接影响焊接质量,从而对器件的可靠性和稳定性产生很大影响。
在元素周期表中过渡组金属元素中银、铜、金和铝四种金属元素具有较高的导电性能,其中,键合金丝因具备优异的导热、机械性能以及化学稳定性,在键合丝使用中占主导地位,但也存在其自身无法克服的缺点:价格昂贵,受市场金件大幅上涨影响较大,制约了封装成本的控制,导致终端产品的价格过高,不利于企业提高竞争力。键合铜丝价格优势明显,但是还存在一些缺点:如铜丝过硬引起的第二焊点容易缩丝,致使键合操作中断,给后续封装工序造成困难,严重影响生成效率和成品率;铜的氧化温度低,键合铜丝的高氧化性,使得键合铜丝在开包后必须在较短时间内用完,键合丝成品长度受限,并且保存需要真空或保护气体。
键合银丝价格便宜,导电性和散热性都好,反光性好不吸光,一般采取多元掺杂合金加入微量元素,减少金属化合物的形成,降低结合性能的退化,使结合性能和金丝一样稳定,银基键合丝的制备总体是按照母合金制备-连续铸造-拉丝-退火-绕线-包装的工艺流程来进行,但现有的银基合金键合丝制备工艺为了防止键合丝氧化均需要在合金熔炼过程中加氮气保护,而且由于关键因素控制不当很难实现合金熔合后的完全均匀化,制得的银基合金键合丝延伸率和拉伸强度等性能波动范围大,影响焊接质量,降低了器件的可靠性和稳定性,同时还影响了整个键合丝生产的流畅性,降低了生产效率。
发明内容
本发明的任务是提供一种熔炼过程中不需加氮气保护,合金熔液熔合均匀,抗氧化性良好,性能稳定的银基键合丝的制备方法以解决现有技术中存在的问题。
本发明通过以下技术方案来实现发明目的:
一种银基键合丝的制备方法,包括以下步骤:
(一)在纯度高于99.999%的Ag中添加2.0%-4.0%Pd、3.0%-5.0%Ce和4.0%-6.0%Cu混合为合金基材;
(二)使用金相砂纸对连铸炉中的坩埚、结晶器以及牵引棒进行抛光后,将步骤一中的合金金属材料加入安装有高温分子筛的连铸炉内,然后抽真空升温,使合金基材在真空度为1.0×10-2MPa-2×10-3MPa,温度为600℃-700℃的连铸炉内搅拌30min-1h进行精炼,并采用水温温控设备控制循环冷却水的温度;
(三)升温到1100℃-1200℃,持续搅拌10-20min,将完全熔化好的合金金属熔液注入连铸炉内的储液池保温,以4-8cm/min的连铸速度完成对合金金属熔液的连铸,熔铸得到合金银棒材;
(四)将步骤三中的合金银棒其投入连铸炉中,重复步骤二和步骤三,制得均匀的合金银棒材;
(五)将上述直径为8-10mm的合金银棒胚料粗拔至直径为0.5mm,然后进行拉丝,拉丝温度为32-36℃,拉丝环境为1000级或10000级,将前述金属细丝加工至直径15μm-50μm,拉制速度控制在500m/min,速度变化控制在10%以内;
(六)采用超声波将上述拉制好的银基键合丝进行表面清洗后,氮气保护下对银丝进行退火处理,热处理温度为400℃-420℃,处理时间为1.0s-2.5s,退火时张力大小为2.0g-2.8g;
(七)绕线,使用专用绕线机,将键合银丝定长绕制在两英寸直径的线轴上,绕线速度控制在50m/min-100m/min,线间距约为5mm,分卷长度为50米至1000米;
(八)包装,采用普通包装,常温保存。
在熔铸过程中,银的表面因部分氧化生成的Ag2O在600-700℃时已完成分解为单质银和氧气,经过多次连续抽真空除去了合金内部的气泡,经过上述工艺制得防氧化和合金熔合均匀的银基键合丝。
进一步地,步骤二中采用的高温分子筛为ZSM-5分子筛,ZSM-5分子筛是美国Mobil公司开发的高硅铝比沸石分子筛,其孔道结构由截面呈椭圆形的直筒形孔道和近似为圆形的Z字型孔道交叉组成,由于骨架中含有稳定的五元环和高硅铝比而具有非常高的热稳定性,在1200℃分子筛仍可保持结构,在高温熔铸过程中吸附空气中的水、氧气和氮气分子,但不吸附银分子,可以防止银蒸发。
进一步地,步骤二中水温温控设备控制循环冷却水的温度在18℃-22℃,通常连铸炉的冷却水采用循环水冷却,冷却水的温度会随着使用频次的变化以及气温的变化产生变化,冬季冷却水温度最低可达到15℃,夏季连续多次使用后最高可达到29℃,这个温度差不影响金属棒的结晶过程,但影响金属棒结晶的程度,冷却水温度越低,结晶越充分,形成晶粒越细小;温度越高,晶粒越粗大,不同冷却水温度下生产的金属棒由于内部结构的不同,会导致后期金属丝性能相差较大,为了增加金属棒生产的一致性与稳定性,因此,增加冷却水温控设备,将温度控制在18~22℃范围内。
进一步地,步骤二中金相砂纸的目数大于2000目,坩埚、结晶器以及牵引头与金属液直接接触,采用专用砂纸金相砂纸和洁净布对坩埚、结晶器以及牵引头进行抛光,以减少金属液、结晶金属棒与接触表面之间的摩擦,获得表面光滑的银基合金棒材。
进一步地,超声波清洗银基键合丝的超声波频率为60W,由此,采用键合丝拉制过程中的在线超声波清洗,提高了键合丝生产的效率,同时调整超声波频率为60W,既能清除键合丝表面的附着物,避免其在封装后对键合丝表面腐蚀而降低电子器件的可靠性加速器件的老化,又不会对危害人体和损伤线材表面。
进一步地,拉丝过程中还采用了拉丝用水性润滑剂,浓度为4%-8%,在拉丝过程中,润滑液的浓度对拉丝过程有严重的影响:浓度过低起不到润滑的目的,增加模具的磨损,并造成键合丝表面出现划痕、沟槽等缺陷,起不到润滑作用,致使拉制力增加、线径变细,或者造成线材表面缺陷并使润滑液残留在线材表面,给线材表面造成严重污染,此外,还会导致模具加速磨损等,润滑剂的稀释采用去离子水,主要因为普通自来水中含有大量钙离子,钙离子容易结碱且不易清除干净。
进一步地,步骤四中对步骤二和步骤三的重复次数为3-6次,经过多次连续熔铸,使合金银基键合丝完全熔合均匀。
优选地,步骤四中对步骤二和步骤三的重复次数为4次。
本发明提供的银基键合丝的制备方法,采用多次连续抽真空和使用高温分子筛除去熔炼过程中的空气,防止合金银基键合丝氧化,同时高温分子筛还可以防止银蒸发,并通过反复熔铸使合金银基键合丝完全熔合均匀,制得的合金银基键合丝延伸率和拉伸强度波动小,性能稳定,成本适中,是半导体器件和大规模集成电路封装领域的首选材料。
具体实施方式
下面结合具体实施例对本发明作进一步详细的说明。
本发明中采用常用的银基键合丝的制备工艺做为对比例
对比例一
(一)在纯度高于99.999%的Ag中添加2.0%Pd、3.0%Ce和4.0%Cu混合为合金基材;
(二)使用2000目金相砂纸对连铸炉中的坩埚、结晶器以及牵引棒进行抛光后,抽真空升温,使合金基材在真空度为1.0×10-2MPa-2×10-3MPa,温度为500℃的连铸炉内搅拌20min进行精炼。
(三)升温到1000℃,持续搅拌10min,将完全熔化好的合金金属熔液注入连铸炉内的储液池保温,以10cm/min的连铸速度完成对合金金属熔液的连铸,熔铸得到合金银棒材;
(四)将步骤三中的合金银棒其投入连铸炉中,制得均匀的合金银棒材;
(五)将上述直径为10mm的合金银棒胚料粗拔至直径为0.5mm,然后进行拉丝,拉丝温度为40℃,拉丝环境10000级,将前述金属细丝加工至直径20μm,拉制速度控制在400m/min,速度变化控制在10%以内;
(六)采用超声波将上述拉制好的银基键合丝进行表面清洗后,氮气保护下对银丝进行退火处理,热处理温度为430℃,处理时间为3.0s,退火时张力大小为3.0g;
(七)绕线,使用专用绕线机,将键合银丝定长绕制在两英寸直径的线轴上,绕线速度控制在80m/min,线间距约为5mm,分卷长度为500米;
(八)包装,采用普通包装,常温保存。
实施例一
(一)在纯度高于99.999%的Ag中添加2.0%Pd、3.0%Ce和4.0%Cu混合为合金基材;
(二)使用2000目金相砂纸对连铸炉中的坩埚、结晶器以及牵引棒进行抛光后,将步骤一中的合金金属材料加入安装有ZSM-5高温分子筛的连铸炉内,然后抽真空升温,使合金基材在真空度为1.0×10-2MPa-2×10-3MPa,温度为600℃的连铸炉内搅拌30min进行精炼,并采用水温温控设备将循环冷却水的温度控制在20℃;
(三)升温到1100℃,持续搅拌10min,将完全熔化好的合金金属熔液注入连铸炉内的储液池保温,以6cm/min的连铸速度完成对合金金属熔液的连铸,熔铸得到合金银棒材;
(四)将步骤三中的合金银棒其投入连铸炉中,依次重复步骤二和步骤三,重复5次,制得均匀的合金银棒材;
(五)将上述直径为8-10mm的合金银棒胚料粗拔至直径为0.5mm,然后进行拉丝,拉丝温度为36℃,拉丝环境10000级,将前述金属细丝加工至直径20μm,拉制速度控制在500m/min,速度变化控制在10%以内;
(六)采用超声波将上述拉制好的银基键合丝进行表面清洗后,氮气保护下对银丝进行退火处理,热处理温度为420℃,处理时间为1.5s,退火时张力大小为2.8g;
(七)使用专用绕线机,将键合银丝定长绕制在两英寸直径的线轴上,绕线速度控制在80m/min,线间距约为5mm,分卷长度为500米;
(八)采用普通包装,常温保存。
实施例二
(一)在纯度高于99.999%的Ag中添加3.0%Pd、4.0%Ce和5.0%Cu混合为合金基材;
(二)使用2500目金相砂纸对连铸炉中的坩埚、结晶器以及牵引棒进行抛光后,将步骤一中的合金金属材料加入安装有5A高温分子筛的连铸炉内,然后抽真空升温,使合金基材在真空度为1.0×10-2MPa-2×10-3MPa,温度为650℃的连铸炉内搅拌1h进行精炼,并采用水温温控设备将循环冷却水的温度控制在20℃;
(三)升温到1200℃,持续搅拌15min,将完全熔化好的合金金属熔液注入连铸炉内的储液池保温,以5cm/min的连铸速度完成对合金金属熔液的连铸,熔铸得到合金银棒材;
(四)将步骤三中的合金银棒其投入连铸炉中,依次重复4次步骤二和步骤三,制得均匀的合金银棒材;
(五)将上述直径为10mm的合金银棒胚料粗拔至直径为0.5mm,然后进行拉丝,拉丝温度为32℃,拉丝环境1000级,将前述金属细丝加工至直径25μm,拉制速度控制在500m/min,速度变化控制在10%以内;
(六)采用超声波将上述拉制好的银基键合丝进行表面清洗后,氮气保护下对银丝进行退火处理,热处理温度为410℃,处理时间为2.0s,退火时张力大小为2.4g;
(七)绕线,使用专用绕线机,将键合银丝定长绕制在两英寸直径的线轴上,绕线速度控制在60m/min,线间距约为5mm,分卷长度为600米;
(八)包装,采用普通包装,常温保存。
对实施例一、实施例二以及对比例一中制得的银基键合丝进行延伸率和拉伸强度测试,测试结果见表1:
表1
由表1可以看出,对比例一制得的20μm银基键合丝的延伸率为8.6%-12.5%,拉伸强度为5.3g-7.3g,两个性能均波动很大,性能非常不稳定,而实施例一中的键合丝延伸率为12.0-12.7%,拉伸强度为7.0g-7.5g,键合丝熔合均匀,延伸率和拉伸强度都较对比例大大提高,并且波动小,一致性好性能稳定,由实施例二也同样能看出由发明的制备方法制得的银基键合丝性能稳定,同时本发明制得的产品经木林森、国兴光电、长方照明等用户认证,对比例一制作线材使用时,断线率达到5.4-8.1%,而实施例一和实施例二制作的线材使用时断线率小于1%。
以上所述的仅是本发明的一些实施方式,对于本领域的普通技术人员来说,在不脱离本发明创造构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。
Claims (7)
1.银基键合丝的制备方法,其特征在于:所述银基键合丝的制备方法包括以下步骤:
(一)在纯度高于99.999%的Ag中添加2.0%-4.0%Pd、3.0%-5.0%Ce和4.0%-6.0%Cu混合为合金基材;
(二)使用金相砂纸对连铸炉中的坩埚、结晶器以及牵引棒进行抛光后,将步骤一中的合金金属材料加入安装有高温分子筛的连铸炉内,然后抽真空升温,使合金基材在真空度为1.0×10-2MPa-2×10-3MPa,温度为600℃-700℃的连铸炉内搅拌30min-1h进行精炼,并采用水温温控设备控制循环冷却水的温度;
(三)升温到1100℃-1200℃,持续搅拌10-20min,将完全熔化好的合金金属熔液注入连铸炉内的储液池保温,以4-8cm/min的连铸速度完成对合金金属熔液的连铸,熔铸得到合金银棒材;
(四)将步骤三中的合金银棒其投入连铸炉中,依次重复步骤二和步骤三,制得均匀的合金银棒材;
(五)将上述直径为8-10mm的合金银棒胚料粗拔至直径为0.5mm,然后进行拉丝,拉丝温度为32-36℃,拉丝环境为1000级或10000级,将前述金属细丝加工至直径15μm-50μm,拉制速度控制在500m/min,速度变化控制在10%以内;
(六)采用超声波将上述拉制好的银基键合丝进行表面清洗后,氮气保护下对银丝进行退火处理,热处理温度为400℃-420℃,处理时间为1.0s-2.5s,退火时张力大小为2.0g-2.8g;
(七)绕线,使用专用绕线机,将键合银丝定长绕制在两英寸直径的线轴上,绕线速度控制在50m/min-100m/min,线间距约为5mm,分卷长度为50米至1000米;
(八)包装,采用普通包装,常温保存。
2.根据权利要求1所述的银基键合丝的制备方法,其特征在于:所述步骤二中采用的高温分子筛为ZSM-5分子筛。
3.根据权利要求1所述的银基键合丝的制备方法,其特征在于:所述步骤二中水温温控设备控制循环冷却水的温度在18℃-22℃。
4.根据权利要求1所述的银基键合丝的制备方法,其特征在于:所述步骤二中金相砂纸的目数大于2000目。
5.根据权利要求1所述的银基键合丝的制备方法,其特征在于:所述超声波清洗银基键合丝的超声波频率为60W。
6.根据权利要求1所述的银基键合丝的制备方法,其特征在于:所述拉丝过程中还采用了拉丝用水性润滑剂,浓度为4%-8%。
7.根据权利要求1所述的银基键合丝的制备方法,其特征在于:所述步骤四中对步骤二和步骤三的重复次数为3-6次。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108509754A (zh) * | 2018-05-15 | 2018-09-07 | 北京航空航天大学 | 一种高密度封装集成电路键合丝触碰风险评估方法 |
CN110219029A (zh) * | 2019-06-20 | 2019-09-10 | 广东禾木科技有限公司 | 一种键合丝阴极钝化保护处理工艺 |
CN115948675A (zh) * | 2022-12-06 | 2023-04-11 | 合肥矽格玛应用材料有限公司 | 一种键合银丝的三元配方及制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1949493A (zh) * | 2006-11-03 | 2007-04-18 | 宁波康强电子股份有限公司 | 键合铜丝及其制备方法 |
US20070274906A1 (en) * | 2006-05-24 | 2007-11-29 | Dai-Su Lee | Method for manufacturing aromatic metal containing zeolite |
CN102776405A (zh) * | 2012-07-25 | 2012-11-14 | 烟台招金励福贵金属股份有限公司 | 一种键合金银合金丝的制备方法 |
CN103194637A (zh) * | 2013-04-27 | 2013-07-10 | 烟台招金励福贵金属股份有限公司 | 一种键合合金银丝及制备方法 |
CN104388861A (zh) * | 2014-10-10 | 2015-03-04 | 河南理工大学 | 一种多晶串联led用微细银金合金键合线的制造方法 |
-
2015
- 2015-10-30 CN CN201510723930.4A patent/CN105390404B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070274906A1 (en) * | 2006-05-24 | 2007-11-29 | Dai-Su Lee | Method for manufacturing aromatic metal containing zeolite |
CN1949493A (zh) * | 2006-11-03 | 2007-04-18 | 宁波康强电子股份有限公司 | 键合铜丝及其制备方法 |
CN102776405A (zh) * | 2012-07-25 | 2012-11-14 | 烟台招金励福贵金属股份有限公司 | 一种键合金银合金丝的制备方法 |
CN103194637A (zh) * | 2013-04-27 | 2013-07-10 | 烟台招金励福贵金属股份有限公司 | 一种键合合金银丝及制备方法 |
CN104388861A (zh) * | 2014-10-10 | 2015-03-04 | 河南理工大学 | 一种多晶串联led用微细银金合金键合线的制造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108509754A (zh) * | 2018-05-15 | 2018-09-07 | 北京航空航天大学 | 一种高密度封装集成电路键合丝触碰风险评估方法 |
CN110219029A (zh) * | 2019-06-20 | 2019-09-10 | 广东禾木科技有限公司 | 一种键合丝阴极钝化保护处理工艺 |
CN115948675A (zh) * | 2022-12-06 | 2023-04-11 | 合肥矽格玛应用材料有限公司 | 一种键合银丝的三元配方及制备方法 |
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Denomination of invention: Method for preparing silver-based bonding wire Effective date of registration: 20190416 Granted publication date: 20181127 Pledgee: Guangzhou Caold financing Company limited by guarantee Pledgor: Guangzhou JB Electronic Technology Co., Ltd. Registration number: 2019440000157 |