CN104752235A - 一种铜钯银合金高精超细键合引线制造方法 - Google Patents

一种铜钯银合金高精超细键合引线制造方法 Download PDF

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CN104752235A
CN104752235A CN201510133949.3A CN201510133949A CN104752235A CN 104752235 A CN104752235 A CN 104752235A CN 201510133949 A CN201510133949 A CN 201510133949A CN 104752235 A CN104752235 A CN 104752235A
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copper
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陈晓东
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Yingtan Rui Xingtong Industry Co Ltd
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Abstract

本发明提供一种铜钯银合金高精超细键合引线制造方法，该键合引线是由下列重量百分比的原料组成：银4%，钯0.03%，混合型稀土0.0002%，其余为铜，其制造方法包括：制备铜合金铸锭，连铸成铸态单晶母线，粗拔，热处理，表面镀银，精拔，热处理，表面清洗，本发明可以有效提升键合引线的抗氧化性能，有利于进一步缩小键合引线的线径，缩短焊接间距，更加适用于高密度，多引脚集成电路封装。

Description

一种铜钯银合金高精超细键合引线制造方法
技术领域
本发明涉及微电子后道封装工序用金属键合引线的制造方法，尤其涉及一种铜钯银合金高精超细键合引线制造方法。
背景技术
微电子器件芯片的键合工序，是指在一定温度下采用超声波加压的方法将键合引线两端分别焊接在芯片盘和引线框架引脚上，实现芯片内部电路与外部电路的连接。早期的键合引线多由纯金制成，直至现今大多厂家用的键合引线也是纯金制成，随着黄金贵重金属资源的日益稀缺，价格持续攀升，微电子封装成本大幅上升，给生产厂家、用户带来难以承受的成本压力，因此，业界正在积极寻求，研发成本相对低廉、性能稳定可靠、加工方便的新型键合引线材料。
目前用于替代黄金键合引线的研究应用大多集中于铜基键合引线，但这类键合引线也有它的不足之处：1、铜丝在拉制过程中因加工硬化，使得难以拉制与黄金键合引线一样细的微细线径；2、由于铜丝过硬，会导致第一焊点容易逃丝，使得键合操作频繁中断，给下道工序的集成电路封装造成较大的困难。
3、由于铜丝具有易氧化的特性，在保存及焊接过程中容易产生氧化，打开包装后必须尽快用完，而且使用时必须加氮氢混合气体加以保护，使得操作危险性增加。
发明内容
本发明的目的就是针对上述情况提供一种生产成本低，使用效果好的铜钯银合金高精超细键合引线制造方法。
本发明的目的可通过以下方案来实现：一种铜钯银合金高精超细键合引线制造方法，该键合引线是由下列重量百分比的原料组成：银4%，钯0.03%，混合型稀土0.0002%，其余为铜，之和等于100%，其制造方法如下：
1、制备铜合金铸锭：提取纯度大于99.9995%的高纯铜，然后加入钯、稀土，含量按照重量百分比分别为Pd0.03%—0.08%、Re0.0002%—0.0008%、其余为铜，钯的纯度大于99.999%，Re为混合型稀土，这些金属经机械混合后放入高纯石墨坩埚中，在惰性气体保护条件下使用感应电炉熔化，制备成铜合金铸锭；
2、连铸成铸态单晶母线：将制备好的铜合金铸锭加入有氮气保护的水平连铸金属单晶连铸室，应用中频感应加热至（1150—1220）℃，待完全熔化、精炼和除气后，将熔液注入连铸室中间的储液池保温，在维持（2—5）L/min净化氮气流量的连铸室中，完成对铜合金熔液的水平单晶连铸，得到Φ3mm、纵向和横向晶粒数均为1个的铜钯合金铸态单晶母线；
3、粗拔：采用常规拉丝设备和工艺、工装、将Φ3mm的铜钯合金铸态单晶母线经多道次过模拉拔工序，拉拔成Φ0.20mm左右的铜钯合金单晶丝；
4、热处理：将拉拔成Φ0.20mm左右的铜钯合金单晶丝置于退火炉中，在（420—460）℃温度下保温25min，保温期间通以氮气保护气体，然后随炉冷却；
5、表面镀银：应用常规电镀设备和工艺，对退火后的Φ0.20mm左右的铜钯合金单晶丝电镀纯银防氧化保护层，电镀用银的纯度要求大于99.99%；
6、精拔：将表面已镀银的镀银铜钯合金单晶键合引线经多道次过模拉拔工序，拉拔成不同的规格的（0.013mm—0.028mm）成品键合引线；
7、热处理：将镀银铜钯合金单晶键合引线置于退火炉中，在（400—420）℃温度下保温25min，保温期间通以氮气保护气体，然后随炉冷却；
8、表面清洗：将镀银铜钯合金单晶键合引线先用酸液清洗，然后经超声波清洗，再由高纯水清洗、烘干。
本发明可以有效提升键合引线的抗氧化性能，有利于进一步缩小键合引线的线径，缩短焊接间距，更加适用于高密度，多引脚集成电路封装。

Claims (1)

1.一种铜钯银合金高精超细键合引线制造方法，该键合引线是由下列重量百分比的原料组成：银4%，钯0.03%，混合型稀土0.0002%，其余为铜，之和等于100%，其制造方法如下：（1）制备铜合金铸锭：提取纯度大于99.9995%的高纯铜，然后加入钯、稀土，含量按照重量百分比分别为Pd0.03%—0.08%、Re0.0002%—0.0008%、其余为铜，钯的纯度大于99.999%，Re为混合型稀土，这些金属经机械混合后放入高纯石墨坩埚中，在惰性气体保护条件下使用感应电炉熔化，制备成铜合金铸锭；（2）连铸成铸态单晶母线：将制备好的铜合金铸锭加入有氮气保护的水平连铸金属单晶连铸室，应用中频感应加热至（1150—1220）℃，待完全熔化、精炼和除气后，将熔液注入连铸室中间的储液池保温，在维持（2—5）L/min净化氮气流量的连铸室中，完成对铜合金熔液的水平单晶连铸，得到Φ3mm、纵向和横向晶粒数均为1个的铜钯合金铸态单晶母线；（3）粗拔：采用常规拉丝设备和工艺、工装、将Φ3mm的铜钯合金铸态单晶母线经多道次过模拉拔工序，拉拔成Φ0.20mm左右的铜钯合金单晶丝；（4）热处理：将拉拔成Φ0.20mm左右的铜钯合金单晶丝置于退火炉中，在（420—460）℃温度下保温25min，保温期间通以氮气保护气体，然后随炉冷却；（5）表面镀银：应用常规电镀设备和工艺，对退火后的Φ0.20mm左右的铜钯合金单晶丝电镀纯银防氧化保护层，电镀用银的纯度要求大于99.99%；（6）精拔：将表面已镀银的镀银铜钯合金单晶键合引线经多道次过模拉拔工序，拉拔成不同的规格的（0.013mm—0.028mm）成品键合引线；（7）热处理：将镀银铜钯合金单晶键合引线置于退火炉中，在（400—420）℃温度下保温25min，保温期间通以氮气保护气体，然后随炉冷却；（8）表面清洗：将镀银铜钯合金单晶键合引线先用酸液清洗，然后经超声波清洗，再由高纯水清洗、烘干。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106077535A (zh) * 2016-07-14 2016-11-09 深圳市烯世传奇科技有限公司 一种石墨烯改性单晶铜的方法
CN108231243A (zh) * 2017-12-30 2018-06-29 安徽晋源铜业有限公司 一种镀银超细铜丝及其制备方法
CN115673007A (zh) * 2022-02-22 2023-02-03 深圳中宝新材科技有限公司 一种用于集成电路双层叠加封装的绝缘键合金丝制造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106077535A (zh) * 2016-07-14 2016-11-09 深圳市烯世传奇科技有限公司 一种石墨烯改性单晶铜的方法
CN106077535B (zh) * 2016-07-14 2018-06-29 深圳市烯世传奇科技有限公司 一种石墨烯改性单晶铜的方法
CN108231243A (zh) * 2017-12-30 2018-06-29 安徽晋源铜业有限公司 一种镀银超细铜丝及其制备方法
CN108231243B (zh) * 2017-12-30 2019-11-19 安徽晋源铜业有限公司 一种镀银超细铜丝及其制备方法
CN115673007A (zh) * 2022-02-22 2023-02-03 深圳中宝新材科技有限公司 一种用于集成电路双层叠加封装的绝缘键合金丝制造方法
CN115673007B (zh) * 2022-02-22 2023-04-18 深圳中宝新材科技有限公司 一种用于集成电路双层叠加封装的绝缘键合金丝制造方法

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