CN105390404A - Method for preparing silver-based bonding wire - Google Patents
Method for preparing silver-based bonding wire Download PDFInfo
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- CN105390404A CN105390404A CN201510723930.4A CN201510723930A CN105390404A CN 105390404 A CN105390404 A CN 105390404A CN 201510723930 A CN201510723930 A CN 201510723930A CN 105390404 A CN105390404 A CN 105390404A
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- silver
- bonding wire
- based bonding
- alloy
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 65
- 239000004332 silver Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 17
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 51
- 239000000956 alloy Substances 0.000 claims abstract description 51
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000002808 molecular sieve Substances 0.000 claims abstract description 14
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 238000004804 winding Methods 0.000 claims abstract description 6
- 229910002065 alloy metal Inorganic materials 0.000 claims abstract description 5
- 238000009749 continuous casting Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 22
- 238000002360 preparation method Methods 0.000 claims description 17
- 238000005491 wire drawing Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 239000000498 cooling water Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000005266 casting Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 6
- 241001226615 Asphodelus albus Species 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 238000013019 agitation Methods 0.000 claims description 5
- 238000005275 alloying Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 238000012856 packing Methods 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 238000007670 refining Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 4
- 239000000314 lubricant Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 3
- 238000010309 melting process Methods 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000003723 Smelting Methods 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 238000004100 electronic packaging Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000005086 pumping Methods 0.000 abstract 1
- 239000002585 base Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910001424 calcium ion Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000007499 fusion processing Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001050 lubricating effect Effects 0.000 description 2
- 238000005461 lubrication Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 244000137852 Petrea volubilis Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
- H01L21/4889—Connection or disconnection of other leads to or from wire-like parts, e.g. wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
- C22C5/08—Alloys based on silver with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
- H01L21/4896—Mechanical treatment, e.g. cutting, bending
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal Extraction Processes (AREA)
- Wire Bonding (AREA)
Abstract
The present invention discloses a method for preparing a silver-based bonding wire. Firstly, 2.0% to 4.0% of Pd, 3.0% to 5.0% of Ce and 4.0% to 6.0% of Cu are added into Ag whose purity is higher than 99.999% to be mixed to be an alloy substrate, and the silver-based bonding wire is prepared through the smelting, drawing, cleaning, annealing, winding, packaging and other steps of the alloy substrate. The nitrogen protection is not needed in the melting process, and the adding of a high temperature molecular sieve and repeated vacuum pumping are used to carry out oxide removing. At the same time the alloy metal melted liquid is completely and uniformly melted through repeated melting, the prepared silver-based bonding wire has the advantages of good consistency, stable performance, and high extension rate and tensile strength, the reliability and stability of welding quality and a device are ensured, the whole production process is smooth, and the production efficiency is improved. At the same time, the silver-based bonding wire has the advantages of good oxidation resistance, good electrical conductivity and moderate cost and can be widely applied to the field of electronic packaging of an IC, an LED and the like.
Description
Technical field
The present invention relates to bonding wire processing technique field, particularly a kind of preparation method of silver based bonding wire.
Background technology
Bonding wire as semiconductor device, one of important feature material of lsi package industry,
Work bringing-out connecting silicon chip electrode and lead frame, and transmit chip the signal of telecommunication, distribute the heat produced in chip, it is the critical material of integrated antenna package, the quality of bonding wire material directly affects welding quality, thus produces a very large impact the reliability and stability of device.
In the periodic table of elements, in transition group metallic element, silver, copper, gold and aluminium four kinds of metallic elements have higher electric conductivity, wherein, bonding gold wire is because possessing excellent heat conduction, mechanical performance and chemical stability, occupy an leading position in bonding wire uses, but also there is the shortcoming that himself cannot overcome: expensive, sharp rising by market gold part affects comparatively greatly, constrains the control of packaging cost, cause the selling at exorbitant prices of end product, be unfavorable for that enterprise enhances competitiveness.Bonding brass wire price advantage is obvious, but also there are some shortcomings: the second solder joint caused as copper wire is really up to the mark easily contracting silk, causes bonding operation to interrupt, cause difficulty to subsequent packaging procedures, have a strong impact on formation efficiency and rate of finished products; The oxidizing temperature of copper is low, the high oxidative of bonding brass wire, bonding brass wire must be finished within a short period of time after opening bag, bonding wire finished product length limited, and preservation needs vacuum or protective gas.
Bonding filamentary silver low price, conductivity and thermal diffusivity are all good, reflective well not extinction, multi-element doping alloy is generally taked to add trace element, reduce the formation of metallic compound, reduce the degeneration of binding ability, make binding ability the same with spun gold stable, the preparation of silver based bonding wire is totally carry out according to the technological process of foundry alloy preparation-continuous casting-wire drawing-annealing-coiling-packaging, but existing silver-base alloy bonding wire preparation technology all needs to add nitrogen protection in alloy melting process to prevent bonding wire to be oxidized, and be difficult to the complete homogenizing after realizing alloy fusion because key factor control is improper, the performance inconsistency scopes such as obtained silver-base alloy bonding wire elongation and hot strength are large, affect welding quality, reduce the reliability and stability of device, also have impact on the fluency that whole bonding wire is produced simultaneously, reduce production efficiency.
Summary of the invention
Task of the present invention is to provide in a kind of fusion process not to be needed to add nitrogen protection, and evenly, non-oxidizability is good, and the preparation method of the silver based bonding wire of stable performance is to solve problems of the prior art in alloy molten solution fusion.
The present invention is achieved through the following technical solutions goal of the invention:
A preparation method for silver based bonding wire, comprises the following steps:
(1) in the Ag of purity higher than 99.999%, add 2.0%-4.0%Pd, 3.0%-5.0%Ce and 4.0%-6.0%Cu and be mixed into alloy base material;
(2) after using abrasive paper for metallograph to carry out polishing to the crucible in continuous casting furnace, crystallizer and drawing bar, alloy metal material in step one is added in the continuous casting furnace being provided with high temperature molecular sieve, then vacuumize intensification, make alloy base material be 1.0 × 10 in vacuum degree
-2mPa-2 × 10
-3mPa, temperature is that the interior 30min-1h that stirs of the continuous casting furnace of 600 DEG C-700 DEG C carries out refining, and adopts the temperature of water temperature temperature control device controlled circulation cooling water;
(3) 1100 DEG C-1200 DEG C are warmed up to, Keep agitation 10-20min, the alloying metal liquation melted completely is injected the liquid storage tank insulation in continuous casting furnace, complete the continuous casting of alloy molten metal with the casting speed of 4-8cm/min, founding obtains alloy silver bar;
(4) by the alloy silver rod in step 3, it drops in continuous casting furnace, repeats step 2 and step 3, obtained uniform alloy silver bar;
(5) by above-mentioned diameter be 8-10mm alloy silver excellent stock slightly pull out to diameter be 0.5mm, then wire drawing is carried out, wire-drawing temperature is 32-36 DEG C, wire drawing environment is 1000 grades or 10000 grades, aforementioned metal filament is machined to diameter 15 μm-50 μm, draw rate controls at 500m/min, and velocity variations controls within 10%;
(6), after adopting ultrasonic wave that silver based bonding wire good for above-mentioned drawing is carried out surface clean, carry out annealing in process to filamentary silver under nitrogen protection, heat treatment temperature is 400 DEG C-420 DEG C, and the processing time is 1.0s-2.5s, and during annealing, Tensity size is 2.0g-2.8g;
(7) coiling, uses special coil winding machine, and bonding filamentary silver fixed length be wound on the bobbin of two inch diameters, threading speed controls at 50m/min-100m/min, and distance between centers of tracks is about 5mm, and bundling length is 50 meters to 1000 meters;
(8) pack, adopt ordinary packing, normal temperature is preserved.
In fusion-casting process, the Ag that silver-colored surface generates because of partial oxidation
2o has completed when 600-700 DEG C and has been decomposed into elemental silver and oxygen, through repeatedly vacuumizing the bubble eliminating alloy inside continuously, obtaining anti-oxidation and alloy fuse uniform silver based bonding wire through above-mentioned technique.
Further, the high temperature molecular sieve adopted in step 2 is ZSM-5 molecular sieve, ZSM-5 molecular sieve is the high silica alumina ratio zeolite molecular sieve of Mobil company of U.S. exploitation, its pore passage structure is made up of with the Z-shaped duct intersection being approximately circle the straight tube shape duct of ellipsoidal cross section, owing to there is very high thermal stability containing stable five-membered ring and high silica alumina ratio in skeleton, still can holding structure at 1200 DEG C of molecular sieves, water in high temperature fusion-casting process in absorbed air, oxygen and nitrogen molecule, but not Adsorption For Ag molecule, can prevent silver evaporation.
Further, in step 2, the temperature of water temperature temperature control device controlled circulation cooling water is at 18 DEG C-22 DEG C, the cooling water of usual continuous casting furnace adopts circulating water, the temperature of cooling water can change along with the change of the change of frequency of usage and temperature, winter, cooling water temperature minimumly reached 15 DEG C, summer, continuous several times can reach 29 DEG C after using, this temperature difference does not affect the crystallization process of metal bar, but affect the degree of metal bar crystallization, cooling water temperature is lower, crystallization is more abundant, forms crystal grain more tiny; Temperature is higher, crystal grain is thicker, the metal bar produced under different cooling water temperature is due to the difference of internal structure, later stage wire performance difference can be caused larger, in order to increase consistency and the stability of metal bar production, therefore, increase cooling water temperature control equipment, temperature is controlled within the scope of 18 ~ 22 DEG C.
Further, in step 2, the order number of abrasive paper for metallograph is greater than 2000 orders, crucible, crystallizer and drawing head directly contact with molten metal, special sand paper abrasive paper for metallograph and clean-cloth is adopted to carry out polishing to crucible, crystallizer and drawing head, with reduce molten metal, crystal metal rod and contact surface between friction, obtain ganoid silver-base alloy bar.
Further, the ultrasonic frequency of Ultrasonic Cleaning silver based bonding wire is 60W, thus, adopt the online Ultrasonic Cleaning in bonding wire pulling process, improve the efficiency that bonding wire is produced, adjust ultrasonic frequency is 60W simultaneously, can the attachment on clear key plying surface, avoid its para-linkage silk surface corrosion and the reliability that reduces electronic device accelerates device aging after packaging, again can not to harmful to human and damage wire surface.
Further, wire drawing use lubricant is additionally used in drawing process, concentration is 4%-8%, in drawing process, the concentration of lubricating fluid has serious impact to drawing process: the too low object not having lubrication of concentration, increase the wearing and tearing of mould, and cause bonding wire surface to occur cut, the defects such as groove, do not have lubrication, drawing power is caused to increase, wire diameter attenuates, or cause wire surface defect and make lubricating fluid remain in wire surface, severe contamination is caused to wire surface, in addition, also can cause mould accelerated wear test etc., the dilution of lubricant adopts deionized water, main because containing a large amount of calcium ion in ordinary tap water, calcium ion easily ties alkali and easy-clear is unclean.
Further, be 3-6 time to the number of repetition of step 2 and step 3 in step 4, through repeatedly continuous fusion-cast, alloy silver based bonding wire fused evenly completely.
Preferably, it is 4 times to the number of repetition of step 2 and step 3 in step 4.
The preparation method of silver based bonding wire provided by the invention, adopt the air repeatedly vacuumizing continuously and use in high temperature molecular sieve removing fusion process, alloy silver based bonding wire is prevented to be oxidized, high temperature molecular sieve can also prevent silver evaporation simultaneously, and making alloy silver based bonding wire fuse evenly completely by Recasts, obtained alloy silver based bonding wire elongation and hot strength fluctuate little, stable performance, moderate cost is the preferred material in semiconductor device and lsi package field.
Embodiment
Below in conjunction with specific embodiment, the present invention is further detailed explanation.
Adopt the preparation technology of conventional silver based bonding wire as comparative example in the present invention
Comparative example one
(1) in the Ag of purity higher than 99.999%, add 2.0%Pd, 3.0%Ce and 4.0%Cu and be mixed into alloy base material;
(2) after using 2000 order abrasive paper for metallograph to carry out polishing to the crucible in continuous casting furnace, crystallizer and drawing bar, vacuumize intensification, make alloy base material be 1.0 × 10 in vacuum degree
-2mPa-2 × 10
-3mPa, temperature is that the interior 20min that stirs of the continuous casting furnace of 500 DEG C carries out refining.
(3) be warmed up to 1000 DEG C, Keep agitation 10min, the alloying metal liquation melted completely injected the liquid storage tank insulation in continuous casting furnace, complete the continuous casting of alloy molten metal with the casting speed of 10cm/min, founding obtains alloy silver bar;
(4) by the alloy silver rod in step 3, it drops in continuous casting furnace, obtained uniform alloy silver bar;
(5) be that slightly to pull out to diameter be 0.5mm for the excellent stock of alloy silver of 10mm by above-mentioned diameter, then carry out wire drawing, wire-drawing temperature is 40 DEG C, wire drawing environment 10000 grades, aforementioned metal filament is machined to diameter 20 μm, draw rate controls at 400m/min, and velocity variations controls within 10%;
(6), after adopting ultrasonic wave that silver based bonding wire good for above-mentioned drawing is carried out surface clean, carry out annealing in process to filamentary silver under nitrogen protection, heat treatment temperature is 430 DEG C, and the processing time is 3.0s, and during annealing, Tensity size is 3.0g;
(7) coiling, uses special coil winding machine, and bonding filamentary silver fixed length be wound on the bobbin of two inch diameters, threading speed controls at 80m/min, and distance between centers of tracks is about 5mm, and bundling length is 500 meters;
(8) pack, adopt ordinary packing, normal temperature is preserved.
Embodiment one
(1) in the Ag of purity higher than 99.999%, add 2.0%Pd, 3.0%Ce and 4.0%Cu and be mixed into alloy base material;
(2) after using 2000 order abrasive paper for metallograph to carry out polishing to the crucible in continuous casting furnace, crystallizer and drawing bar, alloy metal material in step one is added in the continuous casting furnace being provided with ZSM-5 high temperature molecular sieve, then vacuumize intensification, make alloy base material be 1.0 × 10 in vacuum degree
-2mPa-2 × 10
-3mPa, temperature is that the interior 30min that stirs of the continuous casting furnace of 600 DEG C carries out refining, and adopts water temperature temperature control device to control at 20 DEG C by the temperature of recirculated cooling water;
(3) be warmed up to 1100 DEG C, Keep agitation 10min, the alloying metal liquation melted completely injected the liquid storage tank insulation in continuous casting furnace, complete the continuous casting of alloy molten metal with the casting speed of 6cm/min, founding obtains alloy silver bar;
(4) by the alloy silver rod in step 3, it drops in continuous casting furnace, repeats step 2 and step 3 successively, repeats 5 times, obtained uniform alloy silver bar;
(5) be that slightly to pull out to diameter be 0.5mm for the excellent stock of alloy silver of 8-10mm by above-mentioned diameter, then carry out wire drawing, wire-drawing temperature is 36 DEG C, wire drawing environment 10000 grades, aforementioned metal filament is machined to diameter 20 μm, draw rate controls at 500m/min, and velocity variations controls within 10%;
(6), after adopting ultrasonic wave that silver based bonding wire good for above-mentioned drawing is carried out surface clean, carry out annealing in process to filamentary silver under nitrogen protection, heat treatment temperature is 420 DEG C, and the processing time is 1.5s, and during annealing, Tensity size is 2.8g;
(7) use special coil winding machine, bonding filamentary silver fixed length be wound on the bobbin of two inch diameters, threading speed controls at 80m/min, and distance between centers of tracks is about 5mm, and bundling length is 500 meters;
(8) adopt ordinary packing, normal temperature is preserved.
Embodiment two
(1) in the Ag of purity higher than 99.999%, add 3.0%Pd, 4.0%Ce and 5.0%Cu and be mixed into alloy base material;
(2) after using 2500 order abrasive paper for metallograph to carry out polishing to the crucible in continuous casting furnace, crystallizer and drawing bar, alloy metal material in step one is added in the continuous casting furnace being provided with 5A high temperature molecular sieve, then vacuumize intensification, make alloy base material be 1.0 × 10 in vacuum degree
-2mPa-2 × 10
-3mPa, temperature is that the interior 1h that stirs of the continuous casting furnace of 650 DEG C carries out refining, and adopts water temperature temperature control device to control at 20 DEG C by the temperature of recirculated cooling water;
(3) be warmed up to 1200 DEG C, Keep agitation 15min, the alloying metal liquation melted completely injected the liquid storage tank insulation in continuous casting furnace, complete the continuous casting of alloy molten metal with the casting speed of 5cm/min, founding obtains alloy silver bar;
(4) by the alloy silver rod in step 3, it drops in continuous casting furnace, repeats 4 step 2 and step 3 successively, obtained uniform alloy silver bar;
(5) be that slightly to pull out to diameter be 0.5mm for the excellent stock of alloy silver of 10mm by above-mentioned diameter, then carry out wire drawing, wire-drawing temperature is 32 DEG C, wire drawing environment 1000 grades, aforementioned metal filament is machined to diameter 25 μm, draw rate controls at 500m/min, and velocity variations controls within 10%;
(6), after adopting ultrasonic wave that silver based bonding wire good for above-mentioned drawing is carried out surface clean, carry out annealing in process to filamentary silver under nitrogen protection, heat treatment temperature is 410 DEG C, and the processing time is 2.0s, and during annealing, Tensity size is 2.4g;
(7) coiling, uses special coil winding machine, and bonding filamentary silver fixed length be wound on the bobbin of two inch diameters, threading speed controls at 60m/min, and distance between centers of tracks is about 5mm, and bundling length is 600 meters;
(8) pack, adopt ordinary packing, normal temperature is preserved.
Carry out elongation and hot strength test to silver based bonding wire obtained in embodiment one, embodiment two and comparative example one, test result is in table 1:
Table 1
As can be seen from Table 1, the elongation of 20 μm of silver based bonding wires that comparative example one is obtained is 8.6%-12.5%, hot strength is 5.3g-7.3g, two performances all fluctuate very large, performance is very unstable, and the bonding wire elongation in embodiment one is 12.0-12.7%, hot strength is 7.0g-7.5g, bonding wire fusion evenly, elongation and hot strength all comparatively comparative example improve greatly, and it is little to fluctuate, the good stable performance of consistency, the silver based bonding wire stable performance obtained by the preparation method invented can be found out too by embodiment two, the product that the present invention simultaneously obtains is gloomy through wooden woods, the emerging photoelectricity of state, the user authentication such as rectangular illumination, when comparative example one makes wire rod use, outage reaches 5.4-8.1%, and the wire rod that embodiment one and embodiment two make when using outage be less than 1%.
Above-described is only some embodiments of the present invention, and for the person of ordinary skill of the art, without departing from the concept of the premise of the invention, can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (7)
1. the preparation method of silver based bonding wire, is characterized in that: the preparation method of described silver based bonding wire comprises the following steps:
(1) in the Ag of purity higher than 99.999%, add 2.0%-4.0%Pd, 3.0%-5.0%Ce and 4.0%-6.0%Cu and be mixed into alloy base material;
(2) after using abrasive paper for metallograph to carry out polishing to the crucible in continuous casting furnace, crystallizer and drawing bar, alloy metal material in step one is added in the continuous casting furnace being provided with high temperature molecular sieve, then vacuumize intensification, make alloy base material be 1.0 × 10 in vacuum degree
-2mPa-2 × 10
-3mPa, temperature is that the interior 30min-1h that stirs of the continuous casting furnace of 600 DEG C-700 DEG C carries out refining, and adopts the temperature of water temperature temperature control device controlled circulation cooling water;
(3) 1100 DEG C-1200 DEG C are warmed up to, Keep agitation 10-20min, the alloying metal liquation melted completely is injected the liquid storage tank insulation in continuous casting furnace, complete the continuous casting of alloy molten metal with the casting speed of 4-8cm/min, founding obtains alloy silver bar;
(4) by the alloy silver rod in step 3, it drops in continuous casting furnace, repeats step 2 and step 3 successively, obtained uniform alloy silver bar;
(5) by above-mentioned diameter be 8-10mm alloy silver excellent stock slightly pull out to diameter be 0.5mm, then wire drawing is carried out, wire-drawing temperature is 32-36 DEG C, wire drawing environment is 1000 grades or 10000 grades, aforementioned metal filament is machined to diameter 15 μm-50 μm, draw rate controls at 500m/min, and velocity variations controls within 10%;
(6), after adopting ultrasonic wave that silver based bonding wire good for above-mentioned drawing is carried out surface clean, carry out annealing in process to filamentary silver under nitrogen protection, heat treatment temperature is 400 DEG C-420 DEG C, and the processing time is 1.0s-2.5s, and during annealing, Tensity size is 2.0g-2.8g;
(7) coiling, uses special coil winding machine, and bonding filamentary silver fixed length be wound on the bobbin of two inch diameters, threading speed controls at 50m/min-100m/min, and distance between centers of tracks is about 5mm, and bundling length is 50 meters to 1000 meters;
(8) pack, adopt ordinary packing, normal temperature is preserved.
2. the preparation method of silver based bonding wire according to claim 1, is characterized in that: the high temperature molecular sieve adopted in described step 2 is ZSM-5 molecular sieve.
3. the preparation method of silver based bonding wire according to claim 1, is characterized in that: in described step 2, the temperature of water temperature temperature control device controlled circulation cooling water is at 18 DEG C-22 DEG C.
4. the preparation method of silver based bonding wire according to claim 1, is characterized in that: in described step 2, the order number of abrasive paper for metallograph is greater than 2000 orders.
5. the preparation method of silver based bonding wire according to claim 1, is characterized in that: the ultrasonic frequency of described Ultrasonic Cleaning silver based bonding wire is 60W.
6. the preparation method of silver based bonding wire according to claim 1, is characterized in that: additionally use wire drawing use lubricant in described drawing process, and concentration is 4%-8%.
7. the preparation method of silver based bonding wire according to claim 1, is characterized in that: be 3-6 time to the number of repetition of step 2 and step 3 in described step 4.
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Denomination of invention: Method for preparing silver-based bonding wire Effective date of registration: 20190416 Granted publication date: 20181127 Pledgee: Guangzhou Caold financing Company limited by guarantee Pledgor: Guangzhou JB Electronic Technology Co., Ltd. Registration number: 2019440000157 |