CN105321994B - A kind of gallium nitride diode and preparation method thereof - Google Patents
A kind of gallium nitride diode and preparation method thereof Download PDFInfo
- Publication number
- CN105321994B CN105321994B CN201510751506.0A CN201510751506A CN105321994B CN 105321994 B CN105321994 B CN 105321994B CN 201510751506 A CN201510751506 A CN 201510751506A CN 105321994 B CN105321994 B CN 105321994B
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- Prior art keywords
- gallium nitride
- nitride layer
- type gallium
- layer
- diode
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 66
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 230000004888 barrier function Effects 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000686 essence Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A kind of gallium nitride diode of present invention offer and preparation method thereof, which increases the schottky barrier height between the semiconductors such as anode metal layer and n type gallium nitride layer, to reduce the leakage current between metal semiconductor.The gallium nitride diode, including：Substrate；N type gallium nitride layer is formed on the upper surface of the substrate；P-type gallium nitride layer is formed on the upper surface of the n type gallium nitride layer；Anode metal layer is formed on the upper surface of the p-type gallium nitride layer and forms Schottky contacts with the p-type gallium nitride layer.The thickness of the p-type gallium nitride layer is 5 ~ 200nm.
Description
Technical field
The present invention relates to a kind of gallium nitride diodes and preparation method thereof.
Background technology
A kind of structure of gallium nitride diode in the prior art is as shown in Figure 1.In conjunction with shown in Fig. 1, in the prior art,
Substrate 1（Silicon, sapphire, silicon carbide）Upper growth n type gallium nitride layer 2, deposits mutually isolated anode on n type gallium nitride layer 2
Metal layer 3 and cathode metal layer 5 are to constitute diode.The gallium nitride diode of above structure has as a drawback that：Anode metal
Schottky barrier height between n type gallium nitride layer is relatively low, and the reverse leakage current between anode metal-semiconductor is higher.
Invention content
In view of the above-mentioned problems, the object of the present invention is to provide a kind of gallium nitride diode and preparation method thereof, the gallium nitride
Diode increases the schottky barrier height between the semiconductors such as anode metal layer and n type gallium nitride layer, to reduce metal-
Reverse leakage current between semiconductor.
In order to solve the above technical problems, the technical solution adopted by the present invention is：
A kind of gallium nitride diode, including：
Substrate；
N type gallium nitride layer is formed on the upper surface of the substrate；
P-type gallium nitride layer is formed on the upper surface of the n type gallium nitride layer；
Anode metal layer is formed on the upper surface of the p-type gallium nitride layer and forms Xiao Te with the p-type gallium nitride layer
Base contacts.
Preferably, the thickness of the p-type gallium nitride layer is 5 ~ 200nm.
A kind of preparation method of gallium nitride diode as described above, the n type gallium nitride layer and the anode metal layer
Between the p-type gallium nitride layer formed by regrowth or ion implanting.
Preferably, the p-type gallium nitride layer is annealed after being formed.
The present invention uses above technical scheme, has the following advantages that compared with prior art：By in anode metal layer and N-type
It is inserted into one layer of p-type gallium nitride between the semiconductor layers such as gallium nitride layer, increases the semiconductors such as anode metal layer and n type gallium nitride layer
Between schottky barrier height, to reduce the reverse leakage current between metal-semiconductor, and promote breakdown reverse voltage.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing, wherein：
Fig. 1 is a kind of structural schematic diagram of gallium nitride diode in the prior art；
Fig. 2 is the structural schematic diagram of the gallium nitride diode of the present invention.
In above-mentioned attached drawing, 1, substrate；2, undoped gallium nitride layer；3, anode metal layer；4, p-type gallium nitride layer；5, cathode
Metal layer.
Specific implementation mode
The preferred embodiments of the present invention will be described in detail below so that advantages and features of the invention can be easier to by
It will be understood by those skilled in the art that.
Fig. 2 show a kind of gallium nitride diode of the present invention.In conjunction with shown in Fig. 2, it include cathode metal layer 5 and from
Under the supreme substrate 1 being cascading, n type gallium nitride layer 2, p-type gallium nitride layer 4, anode metal layer 3, anode metal layer 3 with
P-type gallium nitride layer 4 formed Schottky contacts, cathode metal layer 5 be deposited on n type gallium nitride layer 2 and with p-type gallium nitride layer 4, sun
Pole metal layer 3 is isolated, that is, have one it is intersegmental away from.Wherein, silicon, sapphire, silicon carbide etc. can be selected in substrate 1.P-type gallium nitride layer
Thickness be 5 ~ 200nm.
A kind of preparation method of above-mentioned gallium nitride diode, by again between n type gallium nitride layer 2 and anode metal layer 3
Growth or ion implanting, and annealed and to form the p-type gallium nitride layer 4.
By being inserted into one layer of p-type gallium nitride 4 between anode metal layer 3 and n type gallium nitride layer 2, anode metal is increased
Schottky barrier height between layer 3 and n type gallium nitride layer 2, to reduce the leakage current between metal-semiconductor, and is promoted
Breakdown reverse voltage.P-type gallium nitride layer 4 is formed by regrowth and ion implanting, and is annealed to reduce lattice damage simultaneously
Uniform doping is set to be distributed.
The above embodiments merely illustrate the technical concept and features of the present invention, is a kind of preferred embodiment, and purpose exists
In those skilled in the art can understand the contents of the present invention and implements according to this, the guarantor of the present invention can not be limited with this
Protect range.Equivalent change or modification made by all Spirit Essences according to the present invention, should all cover in protection scope of the present invention
Within.
Claims (4)
1. a kind of gallium nitride diode, which is characterized in that including：
Substrate；
N type gallium nitride layer is formed on the upper surface of the substrate；
P-type gallium nitride layer is formed on the upper surface of the n type gallium nitride layer；
Anode metal layer is formed on the upper surface of the p-type gallium nitride layer and forms schottky junctions with the p-type gallium nitride layer
It touches；
Cathode metal layer is deposited on the n type gallium nitride layer and has with the p-type gallium nitride layer, the anode metal layer
Have one it is intersegmental away from.
2. gallium nitride diode according to claim 1, it is characterised in that：The thickness of the p-type gallium nitride layer be 5 ~
200nm。
3. a kind of preparation method of such as claim 1-2 any one of them gallium nitride diodes, it is characterised in that：The N-type
The p-type gallium nitride layer is formed by regrowth or ion implanting between gallium nitride layer and the anode metal layer.
4. preparation method according to claim 3, it is characterised in that：The p-type gallium nitride layer is annealed after being formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510751506.0A CN105321994B (en) | 2015-11-06 | 2015-11-06 | A kind of gallium nitride diode and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510751506.0A CN105321994B (en) | 2015-11-06 | 2015-11-06 | A kind of gallium nitride diode and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN105321994A CN105321994A (en) | 2016-02-10 |
| CN105321994B true CN105321994B (en) | 2018-08-17 |
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| CN201510751506.0A Active CN105321994B (en) | 2015-11-06 | 2015-11-06 | A kind of gallium nitride diode and preparation method thereof |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6683972B2 (en) * | 2016-08-26 | 2020-04-22 | 学校法人法政大学 | Semiconductor device, method of manufacturing the same, and semiconductor laminate |
| CN106847934A (en) * | 2017-03-24 | 2017-06-13 | 江南大学 | The gallium nitride PN junction and its manufacture method realized using fluorine ion injection |
| CN107221565A (en) * | 2017-05-23 | 2017-09-29 | 江南大学 | The preparation method of high-gain gallium nitride Schottky diode is realized based on ion implanting fluorine |
| CN113130666A (en) * | 2020-01-10 | 2021-07-16 | 苏州晶湛半导体有限公司 | Schottky diode and method of manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1681135A (en) * | 2004-04-07 | 2005-10-12 | 中国科学院半导体研究所 | Barrier height reinforced ultraviolet detector with gallium nitride schottky and production thereof |
| CN101127368A (en) * | 2001-07-23 | 2008-02-20 | 美商克立股份有限公司 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
| EP2421045A1 (en) * | 2005-11-15 | 2012-02-22 | Power Integrations, Inc. | SECOND SCHOTTKY CONTACT METAL LAYER TO IMPROVE GaN SCHOTTKY DIODE PERFORMANCE |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5225549B2 (en) * | 2006-03-15 | 2013-07-03 | 日本碍子株式会社 | Semiconductor element |
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- 2015-11-06 CN CN201510751506.0A patent/CN105321994B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101127368A (en) * | 2001-07-23 | 2008-02-20 | 美商克立股份有限公司 | Gallium nitride based diodes with low forward voltage and low reverse current operation |
| CN1681135A (en) * | 2004-04-07 | 2005-10-12 | 中国科学院半导体研究所 | Barrier height reinforced ultraviolet detector with gallium nitride schottky and production thereof |
| EP2421045A1 (en) * | 2005-11-15 | 2012-02-22 | Power Integrations, Inc. | SECOND SCHOTTKY CONTACT METAL LAYER TO IMPROVE GaN SCHOTTKY DIODE PERFORMANCE |
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| CN105321994A (en) | 2016-02-10 |
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