CN105206680B - 双向瞬态电压抑制二极管及其制造方法 - Google Patents
双向瞬态电压抑制二极管及其制造方法 Download PDFInfo
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CN106158851B (zh) * | 2016-08-31 | 2022-11-11 | 北京燕东微电子有限公司 | 一种双向超低电容瞬态电压抑制器及其制作方法 |
CN107342283B (zh) * | 2017-07-12 | 2019-08-06 | 墙煌新材料股份有限公司 | 瞬态电压抑制器及其制作方法 |
CN107301994B (zh) * | 2017-07-12 | 2019-05-07 | 新昌县长城空调部件股份有限公司 | 瞬态电压抑制器及其制作方法 |
CN113764404B (zh) * | 2021-09-22 | 2024-06-04 | 江苏吉莱微电子股份有限公司 | 一种低电容低残压的双向esd保护器件及其制作方法 |
CN114038902B (zh) * | 2021-12-01 | 2022-07-01 | 上海镓芯科技有限公司 | 一种薄膜型半导体的瞬态电压抑制二极管 |
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CN102013436A (zh) * | 2010-01-15 | 2011-04-13 | 傲迪特半导体(南京)有限公司 | 具有双向击穿防护功能的低电压过电压抑制器及制造方法 |
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KR100625362B1 (ko) * | 2004-05-27 | 2006-09-20 | 주식회사 케이이씨 | 과도 전압 억제 소자 및 그 제조 방법 |
US8552530B2 (en) * | 2010-08-02 | 2013-10-08 | Amazing Microelectronics Corp. | Vertical transient voltage suppressors |
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CN102013436A (zh) * | 2010-01-15 | 2011-04-13 | 傲迪特半导体(南京)有限公司 | 具有双向击穿防护功能的低电压过电压抑制器及制造方法 |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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