CN204011437U - 双向瞬态电压抑制二极管 - Google Patents
双向瞬态电压抑制二极管 Download PDFInfo
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- CN204011437U CN204011437U CN201420338708.3U CN201420338708U CN204011437U CN 204011437 U CN204011437 U CN 204011437U CN 201420338708 U CN201420338708 U CN 201420338708U CN 204011437 U CN204011437 U CN 204011437U
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- transient voltage
- suppression diode
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- voltage suppression
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- 230000001052 transient effect Effects 0.000 title claims abstract description 56
- 230000002146 bilateral effect Effects 0.000 title claims abstract description 50
- 230000001629 suppression Effects 0.000 title claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 53
- 239000010410 layer Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 44
- 239000011241 protective layer Substances 0.000 claims description 18
- 239000000178 monomer Substances 0.000 claims description 2
- 230000005764 inhibitory process Effects 0.000 abstract description 5
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201420338708.3U CN204011437U (zh) | 2014-06-24 | 2014-06-24 | 双向瞬态电压抑制二极管 |
Applications Claiming Priority (1)
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CN201420338708.3U CN204011437U (zh) | 2014-06-24 | 2014-06-24 | 双向瞬态电压抑制二极管 |
Publications (1)
Publication Number | Publication Date |
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CN204011437U true CN204011437U (zh) | 2014-12-10 |
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CN201420338708.3U Expired - Lifetime CN204011437U (zh) | 2014-06-24 | 2014-06-24 | 双向瞬态电压抑制二极管 |
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CN (1) | CN204011437U (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107968088A (zh) * | 2017-10-17 | 2018-04-27 | 北方电子研究院安徽有限公司 | 一种双向抗静电保护电路版图结构及其制备方法 |
CN109192785A (zh) * | 2018-07-23 | 2019-01-11 | 富芯微电子有限公司 | 一种低漏电的低压tvs器件及其制造方法 |
CN114388613A (zh) * | 2021-12-30 | 2022-04-22 | 电子科技大学 | 一种双向阻断功率mos器件及其制造方法 |
-
2014
- 2014-06-24 CN CN201420338708.3U patent/CN204011437U/zh not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107968088A (zh) * | 2017-10-17 | 2018-04-27 | 北方电子研究院安徽有限公司 | 一种双向抗静电保护电路版图结构及其制备方法 |
CN109192785A (zh) * | 2018-07-23 | 2019-01-11 | 富芯微电子有限公司 | 一种低漏电的低压tvs器件及其制造方法 |
CN114388613A (zh) * | 2021-12-30 | 2022-04-22 | 电子科技大学 | 一种双向阻断功率mos器件及其制造方法 |
CN114388613B (zh) * | 2021-12-30 | 2023-09-01 | 电子科技大学 | 一种双向阻断功率mos器件及其制造方法 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191216 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: 315800 No. 155, West Mount Lu Road, Ningbo Free Trade Zone, Ningbo, Zhejiang Patentee before: NINGBO BYD SEMICONDUCTOR Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |