CN101465382B - 台型半导体装置及其制造方法 - Google Patents
台型半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN101465382B CN101465382B CN200810183342.6A CN200810183342A CN101465382B CN 101465382 B CN101465382 B CN 101465382B CN 200810183342 A CN200810183342 A CN 200810183342A CN 101465382 B CN101465382 B CN 101465382B
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- China
- Prior art keywords
- semiconductor layer
- dielectric film
- type
- mesa
- ditch
- Prior art date
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- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 122
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000009413 insulation Methods 0.000 claims abstract description 8
- 239000004642 Polyimide Substances 0.000 claims abstract description 4
- 229920001721 polyimide Polymers 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 23
- 239000003822 epoxy resin Substances 0.000 claims 2
- 229920000647 polyepoxide Polymers 0.000 claims 2
- 229920005989 resin Polymers 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000009623 Bosch process Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-330329 | 2007-12-21 | ||
JP2007330329A JP5074172B2 (ja) | 2007-12-21 | 2007-12-21 | メサ型半導体装置及びその製造方法 |
JP2007330329 | 2007-12-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101465382A CN101465382A (zh) | 2009-06-24 |
CN101465382B true CN101465382B (zh) | 2010-12-22 |
Family
ID=40787615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810183342.6A Expired - Fee Related CN101465382B (zh) | 2007-12-21 | 2008-12-02 | 台型半导体装置及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8362595B2 (zh) |
JP (1) | JP5074172B2 (zh) |
KR (1) | KR101023872B1 (zh) |
CN (1) | CN101465382B (zh) |
TW (1) | TWI401807B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009158589A (ja) * | 2007-12-25 | 2009-07-16 | Sanyo Electric Co Ltd | メサ型半導体装置及びその製造方法 |
TW200933899A (en) * | 2008-01-29 | 2009-08-01 | Sanyo Electric Co | Mesa type semiconductor device and method for making the same |
CN102231388A (zh) * | 2011-06-23 | 2011-11-02 | 中国电子科技集团公司第十三研究所 | 一种有划片槽的台面或准台面半导体器件及其制备方法 |
US9082629B2 (en) * | 2013-09-30 | 2015-07-14 | Infineon Technologies Ag | Semiconductor device and method for forming a semiconductor device |
US9147727B2 (en) | 2013-09-30 | 2015-09-29 | Infineon Technologies Ag | Semiconductor device and method for forming a semiconductor device |
JP6678549B2 (ja) * | 2016-09-27 | 2020-04-08 | 株式会社 日立パワーデバイス | 半導体装置およびその製造方法、並びに電力変換システム |
WO2020105097A1 (ja) * | 2018-11-19 | 2020-05-28 | 三菱電機株式会社 | 半導体装置 |
CN109904109B (zh) * | 2019-01-31 | 2021-05-28 | 上海朕芯微电子科技有限公司 | 一种双极集成电路的隔离结构及隔离结构的形成方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327617A (zh) * | 1999-10-18 | 2001-12-19 | 日本板硝子株式会社 | 受光器件阵列和受光器件阵列芯片 |
JP2004303927A (ja) * | 2003-03-31 | 2004-10-28 | Sanken Electric Co Ltd | 半導体素子 |
Family Cites Families (40)
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JPS5719869B2 (zh) | 1974-09-18 | 1982-04-24 | ||
US4227975A (en) * | 1979-01-29 | 1980-10-14 | Bell Telephone Laboratories, Incorporated | Selective plasma etching of dielectric masks in the presence of native oxides of group III-V compound semiconductors |
US4656497A (en) * | 1984-11-01 | 1987-04-07 | Ncr Corporation | Trench isolation structures |
JPH0728044B2 (ja) | 1985-08-23 | 1995-03-29 | サンケン電気株式会社 | ガラス被覆半導体チツプの製造方法 |
US4824797A (en) * | 1985-10-31 | 1989-04-25 | International Business Machines Corporation | Self-aligned channel stop |
JPH0244729A (ja) * | 1988-08-05 | 1990-02-14 | Fuji Electric Co Ltd | 半導体素子の製造方法 |
US5164218A (en) | 1989-05-12 | 1992-11-17 | Nippon Soken, Inc. | Semiconductor device and a method for producing the same |
US4974050A (en) * | 1989-05-30 | 1990-11-27 | Motorola Inc. | High voltage semiconductor device and method |
JPH06204232A (ja) * | 1992-12-28 | 1994-07-22 | Shindengen Electric Mfg Co Ltd | 半導体装置の製造方法及び半導体装置 |
JP3155894B2 (ja) * | 1994-09-29 | 2001-04-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5726086A (en) | 1996-11-18 | 1998-03-10 | Mosel Vitelic Inc. | Method of making self-aligned cylindrical capacitor structure of stack DRAMS |
US6127720A (en) * | 1997-05-19 | 2000-10-03 | Matsushita Electronics Corporation | Semiconductor device and method for manufacturing the same |
KR19990003500A (ko) | 1997-06-25 | 1999-01-15 | 김영환 | 레이저 다이오드 및 그 제조 방법 |
US5882986A (en) | 1998-03-30 | 1999-03-16 | General Semiconductor, Inc. | Semiconductor chips having a mesa structure provided by sawing |
JP4200626B2 (ja) | 2000-02-28 | 2008-12-24 | 株式会社デンソー | 絶縁ゲート型パワー素子の製造方法 |
JP3514227B2 (ja) | 2000-10-23 | 2004-03-31 | サンケン電気株式会社 | 半導体素子 |
JP2002353227A (ja) * | 2001-05-28 | 2002-12-06 | Sanken Electric Co Ltd | 半導体素子 |
JP4421144B2 (ja) | 2001-06-29 | 2010-02-24 | 株式会社東芝 | 半導体装置 |
JP2003124478A (ja) | 2001-10-09 | 2003-04-25 | Matsushita Electric Ind Co Ltd | 半導体装置 |
DE10162065A1 (de) | 2001-12-17 | 2003-06-26 | Infineon Technologies Ag | Verfahren zum Grabenätzen |
TWI241028B (en) | 2002-03-08 | 2005-10-01 | Sanken Electric Co Ltd | Semiconductor device and its manufacturing method |
JP3985582B2 (ja) | 2002-05-24 | 2007-10-03 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JP2004128063A (ja) | 2002-09-30 | 2004-04-22 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3972846B2 (ja) | 2003-03-25 | 2007-09-05 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP2005051111A (ja) | 2003-07-30 | 2005-02-24 | Matsushita Electric Ind Co Ltd | メサ型半導体装置 |
TWI266367B (en) | 2003-11-14 | 2006-11-11 | Ind Tech Res Inst | Method for smoothing the sidewall ripples of an etching structure |
JP2005276877A (ja) | 2004-03-23 | 2005-10-06 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2006012889A (ja) | 2004-06-22 | 2006-01-12 | Canon Inc | 半導体チップの製造方法および半導体装置の製造方法 |
JP4982948B2 (ja) | 2004-08-19 | 2012-07-25 | 富士電機株式会社 | 半導体装置の製造方法 |
US7776672B2 (en) | 2004-08-19 | 2010-08-17 | Fuji Electric Systems Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2006130868A (ja) | 2004-11-09 | 2006-05-25 | Canon Inc | インクジェット記録ヘッド及びその製造方法 |
JP2006287118A (ja) | 2005-04-04 | 2006-10-19 | Canon Inc | 半導体装置及びその製造方法 |
JP2006310672A (ja) * | 2005-05-02 | 2006-11-09 | Renesas Technology Corp | 半導体装置の製造方法 |
JP4967340B2 (ja) | 2005-12-28 | 2012-07-04 | セイコーエプソン株式会社 | 半導体装置、半導体装置の製造方法、及び電子機器 |
JP2007207796A (ja) * | 2006-01-31 | 2007-08-16 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2007305906A (ja) * | 2006-05-15 | 2007-11-22 | Renesas Technology Corp | ダイオード |
JP4789713B2 (ja) | 2006-06-29 | 2011-10-12 | 株式会社豊田中央研究所 | ウェットエッチング方法、ダメージ層除去方法、半導体装置の製造方法、および半導体基板の製造方法 |
US7646015B2 (en) | 2006-10-31 | 2010-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device and semiconductor device |
JP2009158589A (ja) * | 2007-12-25 | 2009-07-16 | Sanyo Electric Co Ltd | メサ型半導体装置及びその製造方法 |
TW200933899A (en) | 2008-01-29 | 2009-08-01 | Sanyo Electric Co | Mesa type semiconductor device and method for making the same |
-
2007
- 2007-12-21 JP JP2007330329A patent/JP5074172B2/ja active Active
-
2008
- 2008-11-20 TW TW097144815A patent/TWI401807B/zh not_active IP Right Cessation
- 2008-12-02 CN CN200810183342.6A patent/CN101465382B/zh not_active Expired - Fee Related
- 2008-12-18 US US12/338,686 patent/US8362595B2/en active Active
- 2008-12-18 KR KR1020080129418A patent/KR101023872B1/ko not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327617A (zh) * | 1999-10-18 | 2001-12-19 | 日本板硝子株式会社 | 受光器件阵列和受光器件阵列芯片 |
JP2004303927A (ja) * | 2003-03-31 | 2004-10-28 | Sanken Electric Co Ltd | 半導体素子 |
Non-Patent Citations (1)
Title |
---|
JP昭60-117681A 1985.06.25 |
Also Published As
Publication number | Publication date |
---|---|
TW200929552A (en) | 2009-07-01 |
KR101023872B1 (ko) | 2011-03-22 |
JP2009152457A (ja) | 2009-07-09 |
CN101465382A (zh) | 2009-06-24 |
US8362595B2 (en) | 2013-01-29 |
TWI401807B (zh) | 2013-07-11 |
JP5074172B2 (ja) | 2012-11-14 |
US20090160034A1 (en) | 2009-06-25 |
KR20090068148A (ko) | 2009-06-25 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SANYO SEMICONDUCTOR CO., LTD. NIIGATA SANYO ELECTR Free format text: FORMER OWNER: SANYO SEMICONDUCTOR CO., LTD. SANYO SEMICONDUCTOR MANUFACTURING CO., LTD. |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Japan Osaka Co-patentee after: Sanyo Semiconductor Co.,Ltd. Patentee after: Sanyo Electric Co.,Ltd. Co-patentee after: Sanyo Semiconductor Manufacturing Co.,Ltd. Address before: Japan Osaka Co-patentee before: Sanyo Semiconductor Co.,Ltd. Patentee before: Sanyo Electric Co.,Ltd. Co-patentee before: Xinxie Sanyo Electronics Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20110121 Address after: Japan Osaka Co-patentee after: Sanyo Semiconductor Co.,Ltd. Patentee after: Sanyo Electric Co.,Ltd. Co-patentee after: Xinxie Sanyo Electronics Co.,Ltd. Address before: Japan's Osaka Moriguchi city Beijing Sakamoto 2 D eyes 5 times 5 Co-patentee before: Sanyo Semiconductor Co.,Ltd. Patentee before: Sanyo Electric Co.,Ltd. Co-patentee before: Sanyo Semiconductor Manufacturing Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101222 Termination date: 20211202 |
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CF01 | Termination of patent right due to non-payment of annual fee |