CN105097483B - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

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CN105097483B
CN105097483B CN201510242728.XA CN201510242728A CN105097483B CN 105097483 B CN105097483 B CN 105097483B CN 201510242728 A CN201510242728 A CN 201510242728A CN 105097483 B CN105097483 B CN 105097483B
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卡尔·普利瓦西尔
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Abstract

晶片的加工方法。在晶片的正面具有形成了多个器件的器件区域和围绕该器件区域的外周剩余区域，并且形成有对应于该器件区域的背面被磨削为规定的厚度的圆形凹部和围绕该圆形凹部且对应于该外周剩余区域的环状凸部，加工方法具有：第一带贴附步骤，在晶片的正面贴附第一带，并将晶片隔着该第一带安装于第一环状框架上；分离步骤，在实施了该第一带贴附步骤后，隔着该第一带通过卡盘台保持晶片，对该环状凸部与该器件区域之间的边界照射激光束，将晶片与该第一带一起截断，分离为该器件区域和该环状凸部；以及去除步骤，在实施了该分离步骤后，将隔着该第一带安装于该第一环状框架上的该环状凸部与该第一环状框架一起从晶片的该器件区域上去除。

Description

晶片的加工方法
技术领域
本发明涉及从在背面形成有圆形凹部和围绕圆形凹部的环状凸部的晶片上去除环状凸部的晶片的加工方法。
背景技术
在半导体器件制造工艺中，在呈大致圆板形状的半导体晶片(以下，也简称为晶片)的正面被呈格子状排列的被称作切割线的分割预定线划分出多个区域，并在该被划分出的区域上形成IC、LSI等的器件。而且，通过切削装置沿着切割线切削半导体晶片，从而半导体晶片被分割为各个半导体芯片(器件)。
在沿着切割线切削待分割的晶片之前，先磨削其背面使之形成为规定的厚度。近些年来，为了达成电气设备的轻量化、小型化，要求进一步降低晶片的厚度，例如为50μm左右。
如上较薄形成的晶片如纸般不存在腰部而难以处理，在搬运等时可能发生破损。于是，例如在日本特开2007-19461号公报中提出了如下的磨削方法，仅磨削对应于晶片的器件区域的背面，并且在与围绕器件区域的外周剩余区域对应的晶片的背面上形成加强用的环状凸部。
作为如上沿着切割线(分割预定线)分割在背面的外周上形成有环状凸部的晶片的方法，已提出了在去除了环状凸部后，通过切削刀从晶片的正面侧切削的方法(参照日本特开2007-19379号公报)。
在日本特开2007-17379号公报中，作为去除环状凸部的方法，公开了通过磨削去除环状凸部的方法、以及在通过切削刀将圆形凹部与环状凸部的界面切削为圆形后，去除环状凸部的方法。
专利文献1日本特开2007-19461号公报
专利文献2日本特开2007-19379号公报
然而，在从器件区域上去除环状凸部时，会存在环状凸部易于破损、环状凸部破损而损伤器件区域、需要用于去除环状凸部的特殊装置等问题，去除环状凸部时存在难度。
发明内容
本发明就是鉴于上述情况而完成的，其目的在于，提供一种在不破损环状凸部的情况下能够容易去除的晶片的加工方法。
本发明提供一种晶片的加工方法，该晶片在正面具有形成了多个器件的器件区域和围绕该器件区域的外周剩余区域，且形成有与该器件区域对应的背面被磨削为规定的厚度的圆形凹部和围绕该圆形凹部的与该外周剩余区域对应的环状凸部，该晶片的加工方法的特征在于，具有：第一带贴附步骤，在晶片的正面贴附第一带，并且隔着该第一带将晶片安装于第一环状框架上；分离步骤，在实施了该第一带贴附步骤后，隔着该第一带通过卡盘台保持晶片，对该环状凸部与该器件区域之间的边界照射激光束，将晶片与该第一带一起截断，分离为该器件区域和该环状凸部；以及去除步骤，在实施了该分离步骤后，将隔着该第一带安装于该第一环状框架上的该环状凸部与该第一环状框架一起从晶片的该器件区域去除。
本发明的晶片的加工方法还具有：第二带贴附步骤，在实施了该去除步骤后，在仅由该器件区域构成的晶片的背面贴附第二带，并隔着该第二带将晶片安装于第二环状框架上；第一带去除步骤，在实施该第二带贴附步骤之前或之后，从晶片的正面去除该第一带；以及分割步骤，在实施了该第二带贴附步骤和该第一带去除步骤后，将晶片分割为各个器件。
本发明的晶片的加工方法还具有：保护膜覆盖步骤，在实施该分离步骤之前，在晶片的背面覆盖水溶性保护膜；以及保护膜去除步骤，至少在实施了该保护膜覆盖步骤和该分离步骤后，对晶片的背面供给清洗水并去除该保护膜。
根据本发明的加工方法，在实施了基于激光束照射的分离步骤后，将贴附于第一带上的环状凸部与第一环状框架一起从晶片的器件区域上去除，因此能够在不破损环状凸部的情况下容易地将其从器件区域上去除。
由于通过激光束的照射来实施分离步骤，因此即使在作为圆形凹部的底部的晶片的背面上覆盖有金属膜也不会产生腐蚀。此外，使用激光束进行分离步骤，因此能够使切口小于通过切削刀切割时的大小，因此能够最大限度保证有效器件的区域。
附图说明
图1是半导体晶片的正面侧立体图。
图2是在正面上贴附有保护带的状态的晶片的背面侧立体图。
图3是表示磨削步骤的立体图。
图4是磨削步骤结束后的晶片的剖面图。
图5是表示第一带贴附步骤的立体图。
图6是激光加工装置的立体图。
图7是表示保护膜覆盖步骤的剖面图。
图8是表示分离步骤的立体图。
图9是表示分离步骤的放大剖面图。
图10是表示去除步骤的立体图。
图11是表示清洗步骤的剖面图。
图12是表示第二带贴附步骤的立体图。
图13是表示第一带去除步骤的立体图。
图14是表示分割步骤的立体图。
标号说明
10：磨削轮，11：半导体晶片，14：磨削磨石，17：器件区域，18：圆形凹部，19：外周剩余区域，20：环状凸部，23：保护带，44：激光束照射组件，48：聚光器，50：保护膜覆盖装置，54：旋转台，62：水溶性树脂供给喷嘴，66：清洗水供给喷嘴，74：切削组件，78：切削刀，T1：第一切割带，T2：第二切割带，F1：第一环状框架，F2：第二环状框架。
具体实施方式
以下，参照附图详细说明本发明的实施方式。参照图1，示出半导体晶片(以下，也简称为晶片)11的正面侧立体图。半导体晶片11由例如厚度为700μm的硅晶片构成，且在正面11a上呈格子状形成有多条切割线(分割预定线)13，并且在被多条切割线13划分出的各区域上形成有IC、LSI等的器件15。
如上构成的半导体晶片11在正面11a上具有形成有器件15的器件区域17、以及围绕器件区域17的外周剩余区域19。此外，在半导体晶片11的外周形成有作为表示硅晶片的结晶方位的标记的凹口21。
在磨削晶片11的背面11b时，在晶片11的正面11a上贴附有保护带23。因此，晶片11的正面11a被保护带23保护，如图2所示，成为背面11b露出的形式。
在作为本发明的加工方法的加工对象的晶片11上，与器件区域17对应的晶片11的背面11b被磨削为规定的厚度且形成有圆形凹部，并且该晶片还形成有围绕圆形凹部的与外周剩余区域19对应的环状凸部，参照图3和图4说明晶片的磨削方法。
在图3中，符号2是磨削装置的磨削组件，其具有以能够旋转的方式收容于主轴壳体4中的主轴6、固定于主轴6的前端上的轮安装器8、以自由拆装的方式安装于轮安装器8上的磨削轮10。磨削轮10由环状的轮基座12和呈环状贴附于轮基座12的下端外周部上的多个磨削磨石14构成。
在背面磨削步骤中，通过磨削装置的卡盘台16吸附保持贴附于晶片11的正面11a上的保护带23，使晶片11的背面11b露出。然后，使卡盘台16在箭头A所示的方向上例如以300rpm进行旋转，并且使磨削轮10在箭头B所示的方向上例如以6000rpm进行旋转，并且驱动未图示的磨削组件进给机构，使磨削磨石14接触晶片11的背面11b。然后，使磨削轮10以规定的磨削进给速度向下方规定的量进行磨削进给。
其结果，在半导体晶片11的背面11b上，如图4所示，与器件区域17对应的区域被磨削去除而形成圆形凹部18，并且残留外周剩余区域19而形成环状凸部20。
在晶片11的背面磨削结束后，本发明的晶片的加工方法，如图5所示，实施第一带贴附步骤，剥离贴附于晶片11的正面11a上的保护带23，在晶片正面11a上贴附作为粘结带的第一切割带T1，隔着第一切割带T1将晶片11安装于第一环状框架F1上。即，将晶片11的正面11a贴附于第一切割带T1上，该第一切割带T1的外周部贴附于第一环状框架F1上。
也可以不剥离贴附于晶片11的正面11a上的保护带23，而是隔着保护带23将第一切割带T1贴附于晶片正面11a上。
参照图6，示出在分离器件区域17与环状凸部20时使用的激光加工装置22的立体图。在激光加工装置22的前表面侧设有用于由操作者输入加工条件等的对于装置的指示的操作面板24。装置上部设有显示对于操作者的引导画面和由后述的摄像组件摄像的图像的CRT等的监视器26。
如图5所示，晶片11处于隔着第1切割带T1支撑于第1环状框架F1上的状态，在图6所示的晶片盒28中收容有多块(例如25块)晶片。晶片盒28放置于能够上下移动的盒升降器29上。
在晶片盒28的后方配设有搬入搬出单元30，该搬入搬出单元30用于从晶片盒28中搬出激光加工前的晶片11，并将加工后的晶片搬入晶片盒28。
在晶片盒28与搬入搬出单元30之间设有作为暂时放置搬入搬出对象的晶片的区域的暂放区域32，在暂放区域32配设有用于使晶片11对准一定的位置的对位单元34。
50是保护膜覆盖装置，该保护膜覆盖装置50兼作为对加工后的晶片进行清洗的清洗装置。在暂放区域32的附近配设有搬运单元36，该搬运单元36具有吸附并搬运与晶片11形成为一体的第1框架F1。
被搬出到暂放区域32上的晶片11被搬运单元36吸附而搬运至保护膜覆盖装置50。保护膜覆盖装置50，如后详细所述，在晶片11的背面涂布水溶性树脂以覆盖保护膜。
背面覆盖有保护膜的晶片11被搬运单元36吸附并搬运至卡盘台38上，其吸附于卡盘台38上，通过被多个固定单元(夹钳)39固定住第1框架F，从而该晶片11保持于卡盘台38上。
卡盘台38构成为能够进行旋转且能够在X轴方向上进行往返移动，在卡盘台38的X轴方向的移动路径的上方配设有检测晶片11的待激光加工区域的校准组件40。
校准组件40具有对晶片11摄像的摄像组件42，其根据通过摄像而取得的图像，能够通过图案匹配等的图像处理检测待激光加工的区域。由摄像组件42取得的图像显示于显示组件26上。
在校准组件40的左侧配设有对保持于卡盘台38上的晶片11照射激光束的激光束照射组件44。激光束照射组件44能够在Y轴方向上移动。
激光束照射组件44具有激光束发生组件，该激光束发生组件具有收容于壳体46中的YAG激光振荡器等的激光振荡器，从激光束发生组件射出的激光束从安装于壳体46的前端上的聚光器48照射到保持于卡盘台38上的晶片11上。
激光加工结束后的晶片11被搬运单元52保持住且搬运到兼作为被清洗装置的保护膜覆盖装置50，被兼用作清洗装置的保护膜覆盖装置50清洗。
接着，参照图7，说明在晶片11的背面11b覆盖保护膜的保护膜覆盖步骤。该保护膜覆盖步骤为可选步骤，通常不需要该步骤，针对在晶片11的背面11b、即凹部18的底面形成有金属膜的晶片11实施。
在图7中，保护膜覆盖装置52具有旋转台54和以包围旋转台54的方式配设的清洗水收纳容器56。旋转台54具有由多孔陶瓷等的多孔性材料形成的吸附保持部、以及围绕吸附保持部的框体构成，且具有钳住第一环状框架F1的多个夹钳58。旋转台54与电动机58的输出轴60连结。
保护膜覆盖装置52具有对保持于旋转台54上的激光加工前的半导体晶片11供给水溶性树脂的水溶性树脂供给喷嘴62、以及对激光加工后的晶片11供给清洗水的清洗水供给喷嘴66。水溶性树脂供给喷嘴62凭借电动机64而在退避位置与供给位置之间进行转动，清洗水供给喷嘴66凭借电动机68而在退避位置与供给位置之间进行转动。
在实施保护膜覆盖步骤时，通过搬运单元36将图5所示的第一带贴附步骤实施后的晶片11搬运至保护膜覆盖装置50，并放置于保护膜覆盖装置50的旋转台54上。
然后，驱动电动机64，使水溶性树脂供给喷嘴62在图7所示的供给位置上转动，将水溶性树脂供给至晶片11上，然后驱动电动机58，使旋转台54在R1方向上以大约2000rpm进行旋转，将所供给的水溶性树脂旋转涂布于在晶片11的背面上形成的圆形凹部18的整个面上。
旋转台54以2000rpm这样比较高的速度进行旋转，因此振子式的夹钳58凭借离心力而转动，钳住第一环状框架F1使其固定。由此，被供给至晶片11的圆形凹部18中的水溶性树脂全方位被旋转涂布于凹部18的底部上，从而覆盖住水溶性保护膜。
作为形成水溶性保护膜的水溶性树脂，优选使用PVA(聚乙烯醇)、PEG(聚乙二醇)、PEO(聚氧化乙烯)等的水溶性抗蚀膜。
在第一带贴附步骤实施后，或在第一带贴附步骤和保护膜覆盖步骤实施后，实施分离晶片11的器件区域17与环状凸部20的分离步骤。参照图8说明该分离步骤。
通过激光加工装置22的卡盘台38隔着第一切割带T1吸附保持形成有圆形凹部18和环状凸部20的晶片11。而且，通过摄像组件42对晶片11进行摄像，实施检测环状凸部20与器件区域17(圆形凹部18)之间的边界的校准，并将检测的边界的坐标值存储于校准组件40的存储器中。
在校准实施后，从激光束照射组件44的聚光器48对环状凸部20与圆形凹部18之间的边界照射对晶片具有吸收性的波长(例如355mm)的激光束，并使卡盘台38进行旋转，使用从聚光器48照射的激光束通过烧蚀将环状凸部20与圆形凹部18之间的边界去除为圆形。
优选如图9所示，在卡盘台38的框体38b上形成对应于环状凸部20与圆形凹部18之间的边界部分的环状槽27，并在该环状槽27中配设激光束吸收部件29。由此，可防止通过从聚光器48照射的激光束对卡盘台38的框体38b部分进行加工。
通过向环状凸部20与圆形凹部18之间的边界的全周照射激光束，晶片11的器件区域17和环状凸部20与第一切割带T1一起分离(分离步骤)。
在分离步骤实施后，如图10所示，实施去除步骤，将隔着第一切割带T1安装于第一环状框架F1上的环状凸部20与第一环状框架F1一起从晶片11的器件区域17上去除。
在去除步骤实施后，实施了保护膜覆盖步骤的情况下，实施对晶片11的背面11b供给清洗水并去除保护膜的保护膜去除步骤。参照图11说明该保护膜去除步骤。
通过保护膜覆盖装置52的旋转台54吸附保持在器件区域17的背面覆盖有保护膜的晶片11。然后，驱动电动机68，使清洗水供给喷嘴66从退避位置起向图11所示的供给位置转动。
接着，从清洗水供给喷嘴66供给清洗水并驱动电动机58，使旋转台54以大约1000rpm进行旋转。保护膜为水溶性保护膜，因而通过该清洗步骤(保护膜去除步骤)，保护膜从器件区域17的背面被去除。
在分离步骤和保护膜去除步骤实施后，如图10所示，实施将隔着第一切割带T1安装于第一环状框架F1上的环状凸部20与第一环状框架F1一起从器件区域17上去除的去除步骤。因此，在卡盘台38上残留着贴附于第一切割带T1上的器件区域17。
在实施了去除步骤后，如图12所示，实施第二带贴附步骤，将第二切割带T2贴附于仅由器件区域17构成的晶片11的背面11b上，并将其隔着第二切割带T2安装于第二环状框架F2上。
通过实施该第二带贴附步骤，仅由器件区域17构成的晶片11隔着第二切割带T2而支撑于第二环状框架F2上，作为晶片11的正面11a的器件区域17为上侧。
在实施了第二带贴附步骤后，如图13所示，实施将第一切割带T1从晶片11的正面11a上去除的第一带去除步骤。此外，该第一带去除步骤也可以在实施第二带贴附步骤之前进行。
在实施了第二带贴附步骤和第一带去除步骤后，实施将晶片分割为各个器件的分割步骤。该分割步骤例如是通过在图14中示出了要部的切削装置实施的。
74是切削装置70的切削组件，其具有被收容于主轴壳体76中且未图示的电动机旋转驱动的主轴、以及以能够拆装的方式安装于主轴前端上的切削刀78。
切削刀78被轮罩80覆盖。安装于轮罩80上的管82与未图示的切削水供给源连接。从管82导入的切削水从被配置为夹住切削刀78的切削水供给喷嘴84中喷出，从而完成器件区域17的切削。
在器件区域17的切削时，从切削水供给喷嘴84中喷射切削水，同时使切削刀78在箭头A方向上高速(例如30000rpm)旋转，并使卡盘台72在X轴方向上进行加工进给，从而器件区域17沿着切割线13被切削而形成切削槽31。
使切削组件74在Y轴方向上按照切割线13的间距逐次进行分度进给，并依次切削在第1方向上伸长的切割线13。对在第1方向上伸长的所有切割线13的切削结束后，使卡盘台72旋转90°，然后沿着在第2方向上伸长的切割线13执行同样的切削，将晶片11的器件区域17分割为各个器件15。
分割步骤不限于切削装置的切割，还可以进行使用激光束的烧蚀加工，或照射激光束以在晶片内部形成改质层，对形成了改质层的晶片施加外力，从而将晶片11的器件区域17分割为各个器件15。此外，使用激光束的加工时的激光束既可以从晶片的正面侧、射入，也可以从背面侧射入。
此外，在本实施方式中，在晶片的正面贴附正面保护带而磨削背面，从而形成了圆形凹部和环状凸部，然而也可以如下实施第一带安装步骤，即在晶片的磨削前在晶片正面贴附作为粘结带的第一切割带，并且隔着第一切割带将晶片安装于第一环状框架上。

Claims (3)

1.一种晶片的加工方法，该晶片在正面具有形成了多个器件的器件区域和围绕该器件区域的外周剩余区域，且该晶片形成有圆形凹部和环状凸部，其中，该圆形凹部是与该器件区域对应的背面被磨削为规定的厚度而形成的，该环状凸部围绕该圆形凹部并与该外周剩余区域对应，
该晶片的加工方法的特征在于，具有：
第一带贴附步骤，在晶片的正面贴附第一带，并且隔着该第一带将晶片安装于第一环状框架上；
分离步骤，在实施了该第一带贴附步骤后，通过卡盘台隔着该第一带保持晶片，实施检测环状凸部与器件区域之间的边界的校准，在校准实施后，对该环状凸部与该器件区域之间的该边界的全周照射激光束，将晶片与该第一带一起被所述激光束截断，分离为该器件区域和该环状凸部；以及
去除步骤，在实施了该分离步骤后，将隔着该第一带安装于该第一环状框架上的该环状凸部与该第一环状框架一起从晶片的该器件区域去除，
由此，在不破损所述环状凸部的情况下容易地将其从器件区域上去除，同时使切口小于通过切刀切割时的大小而最大限度地保证有效的器件区域。
2.根据权利要求1所述的晶片的加工方法，其中，该加工方法还具有：
第二带贴附步骤，在实施了该去除步骤后，对仅由该器件区域构成的晶片的背面贴附第二带，并隔着该第二带将晶片安装于第二环状框架上；
第一带去除步骤，在实施该第二带贴附步骤之前或之后，从晶片的正面去除该第一带；以及
分割步骤，在实施了该第二带贴附步骤和该第一带去除步骤后，将晶片分割为各个器件。
3.根据权利要求1或2所述的晶片的加工方法，其中，该加工方法还具有：
保护膜覆盖步骤，在实施该分离步骤之前，在晶片的背面覆盖水溶性保护膜；以及
保护膜去除步骤，在至少实施了该保护膜覆盖步骤和该分离步骤后，对晶片的背面供给清洗水而去除该保护膜。
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