CN104993819B - The ring oscillator and preparation method of gallium nitride base low-leakage current clamped beam - Google Patents
The ring oscillator and preparation method of gallium nitride base low-leakage current clamped beam Download PDFInfo
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Abstract
The ring oscillator of the gallium nitride base low-leakage current clamped beam of the present invention is joined end to end by three phase inverters and formed, and what these three phase inverters were made up of the N-channel MESFET with MEMS fixed beam structures and P-channel MESFET.The ring oscillator is based on semi-insulating type GaN substrate, N-type MESFET and p-type MESFET therein possess the clamped beam being suspended in above grid, the clamped beam is made of Au, there are two pull-down electrodes below clamped beam, pull-down electrode wherein below N-type MESFET clamped beams is ground connection, and the pull-down electrode below p-type MESFET clamped beams connects power supply, N-type MESFET threshold voltage designs be on the occasion of, p-type MESFET threshold voltage designs are negative value, and the absolute value of N-type MESFET and p-type MESFET threshold voltage be designed as it is equal, the actuation voltage of clamped beam is designed as equal with the absolute value of MESFET threshold voltage.
Description
Technical field
The present invention proposes the ring oscillator of gallium nitride base low-leakage current clamped beam, belongs to the skill of microelectromechanical systems
Art field.
Background technology
In today that integrated circuit continues to develop, either individual devices are still all carried to whole system, people to it
Higher requirement is gone out, especially in terms of speed and power consumption, speed is increasingly faster and power consumption is more and more lower has become weighing apparatus
Measure the major criterion of electronic device quality.GaN metals-semiconductor field effect transistor (MESFET) with its electron mobility it is high,
Many advantages, such as carrier drift speed is fast, energy gap is big, capability of resistance to radiation is strong, operating temperature range is wide and by widely should
For fields such as fiber optic communication, mobile communication, very-high speed computer, high-speed measuring instrument device, Aero-Space.Made by MESFET
Ring oscillator is exactly a kind of widely used high speed device, this oscillator circuit is simple, starting of oscillation easily, small volume, be easy to
It is integrated, it is often more important that due to MESFET characteristic, the frequency of oscillation of oscillator is very high, applies to many high-speed figures and patrols
In volume, also just because of the continuous rise of clock frequency so that the power problemses of this oscillator become increasingly conspicuous, and high power consumption is to shaking
The stability for swinging device proposes huge challenge.Therefore the power consumption for reducing oscillator is problem that people increasingly study, Ye Shiji
A mostly important ring into circuit design.
Traditional MESFET grid directly contacts with raceway groove forms Schottky contacts, if bias voltage is applied directly to this grid
On extremely, an obvious grid leakage current is just had, therefore reduce this leakage current with regard to that can effectively reduce the work(of ring oscillator
Consumption, the present invention are exactly that a kind of ring oscillation of the clamped beam type of the gate leakage current with very little is devised in GaN substrate
Device.
The content of the invention
Technical problem：It is an object of the invention to provide a kind of ring oscillator and system of gallium nitride base low-leakage current clamped beam
Preparation Method, ring oscillator is end to end by odd number phase inverter and forms, when ring oscillator works, in preferable feelings
Under condition, the grid current of this odd number phase inverter should be 0, but in practical situations both, due to MESFET grid and raceway groove
Directly contact, thus inevitably produce grid leakage current, just because of this grid leakage current, ring oscillator
Power consumption just can it is too high, and the present invention just the extremely effective grid leakage current reduced in ring oscillator, so as to drop
The power consumption of low ring oscillator.
Technical scheme：A kind of ring oscillator of gallium nitride base low-leakage current clamped beam of the present invention is by three phase inverter head
Tail is connected and formed, and three phase inverters are made up of the N-type MESFET with MEMS fixed beam structures and p-type MESFET, the ring
Shape oscillator is based on semi-insulating type GaN substrate, N-type MESFET and p-type MESFET therein respectively by source electrode, drain electrode, grid and
Raceway groove forms, and they are owned by a clamped beam being suspended in above grid, and the clamped beam is made by Au materials, under clamped beam
Side is provided with two pull-down electrodes, and they are distributed between grid and anchor area, the drop-down electricity wherein below N-type MESFET clamped beam
Pole is grounded, and the pull-down electrode below p-type MESFET clamped beam connects power supply, covered with silicon nitride medium layer in pull-down electrode.
Voltage signal is loaded on clamped beam, is not attached on grid, N-type MESFET threshold voltage designs
To be negative value on the occasion of, p-type MESFET threshold voltage designs, and the absolute value of N-type MESFET and p-type MESFET threshold voltage
It is designed as equal, the actuation voltage of clamped beam is designed as equal with the absolute value of MESFET threshold voltage.When MESFET is clamped
When voltage between beam and pull-down electrode is less than threshold voltage absolute value, the clamped beam of suspension will not absorb, and now hang
There is a lamellar spacing between floating clamped beam and grid, also just because of this, DC leakage current has obtained good suppression；Work as MESFET
Clamped beam and pull-down electrode between voltage when be more than threshold voltage absolute value, the clamped beam of suspension will be adsorbed to grid
On extremely, MESFET can just be turned on.
When wherein having high level on the clamped beam of some MESFET phase inverter, then N-type MESFET clamped beam will
Drop-down is labelled on grid, and N-type MESFET turns on regard to this, and p-type MESFET is in cut-off state, the now MESFET paraphase
Device exports low level, opposite, when having low level on the clamped beam of the MESFET phase inverters, then N-type MESFET cut-offs, p-type
MESFET is turned on, phase inverter output high level；Because the circulation of three phase inverters connects, the output of previous phase inverter be exactly it is latter fall
The input of phase device, therefore these three MESFET phase inverters produce self-oscillation, so as to form ring oscillator.
The output end and input of these three phase inverters, which join end to end, forms ring-type, forms ring oscillator, ring oscillation
During device starting of oscillation, it is assumed that phase inverter clamped beam is encouraged by high level, because the pull-down electrode below N-type MESFET clamped beams connects
Be ground, so as to which N-type MESFET clamped beam will be pulled down and is labelled on the grid above N-type channel, so as to N-type MESFET
Start normally work, and p-type MESFET is in suspended state, what is now exported is low level；Opposite, when clamped
When voltage on beam is low level, p-type MESFET clamped beam can be just pulled down on the grid being labelled to above P-type channel, p-type
MESFET turns on regard to this, and N-type MESFET ends, and what is now exported is exactly high level, during three phase inverter cooperations, generation
Self-oscillation, so as to form ring oscillator, high level herein refers to the power supply electricity for being more than MESFET threshold voltage absolute values
Pressure, and low level is ground.
The preparation method of the ring oscillator of the gallium nitride base low-leakage current clamped beam of the present invention is as follows：
1) semi-insulating type GaN substrate is prepared；
2) one layer of silicon nitride, photoetching and etch silicon nitride are deposited, removes the silicon nitride of p-type MESFET channel regions；
3) p-type MESFET Channeling implantations：Boron is injected, is annealed in a nitrogen environment；After the completion of annealing, carry out at high temperature miscellaneous
Matter redistributes, and forms p-type MESFET channel region；
4) silicon nitride layer is removed：Silicon nitride is all removed using dry etching technology；
5) one layer of silicon nitride, photoetching and etch silicon nitride are deposited, removes the silicon nitride of N-type MESFET channel regions；
6) N-type MESFET Channeling implantations：Phosphorus is injected, is annealed in a nitrogen environment；After the completion of annealing, carry out at high temperature miscellaneous
Matter redistributes, and forms N-type MESFET channel region；
7) silicon nitride layer is removed：Silicon nitride is all removed using dry etching technology；
8) photoetched grid, the photoresist in grid region is removed；
9) electron beam evaporation titanium/platinum/gold；
10) titanium/platinum/gold on remaining photoresist and photoresist is removed；
11) heat, titanium/platinum/billon is formed Schottky contacts with p-type MESFET raceway grooves and N-type MESFET raceway grooves；
12) photoresist is coated, photoetching simultaneously etches N-type MESFET source electrodes and the photoresist of drain region；
13) N-type heavy doping is carried out to the region, in the N-type heavily doped region that N-type MESFET source electrodes and drain region are formed,
Carry out short annealing processing；
14) photoresist is coated, photoetching simultaneously etches p-type MESFET source electrodes and the photoresist of drain region；
15) p-type heavy doping is carried out to the region, in the p-type heavily doped region that p-type MESFET source electrodes and drain region are formed,
Carry out short annealing processing；
16) photoetching source electrode and drain electrode, source electrode and the photoresist of drain electrode are removed；
17) it is evaporated in vacuo gold germanium ni au；
18) the gold germanium ni au on photoresist and photoresist is removed；
19) alloying forms Ohmic contact, forms source electrode and drain electrode；
20) photoresist is coated, removes the photoetching of the anchor zone position of power line, ground wire, lead, pull-down electrode and clamped beam
Glue；
21) first layer gold is evaporated, its thickness is about 0.3 μm；
22) gold on photoresist and photoresist is removed, forms power line, ground wire, lead, pull-down electrode and clamped beam
Anchor area；
23) one layer is depositedThick silicon nitride；
24) photoetching and etch nitride silicon dielectric layer, the silicon nitride being retained in pull-down electrode；
25) deposit and photoetching polyimide sacrificial layer：The polyimide sacrificial layer of 1.6 μ m-thicks is coated in GaN substrate,
Ask and fill up pit；Photoetching polyimide sacrificial layer, only retain the sacrifice layer below clamped beam；
26) titanium/gold/titanium is evaporated, its thickness is 500/1500/；
27) photoetching：The photoresist in place will be electroplated by removing；
28) plating gold, its thickness are 2 μm；
29) photoresist is removed：The photoresist in place need not be electroplated by removing；
30) titanium/gold/titanium is anti-carved, corrodes down payment, forms MEMS clamped beams；
31) polyimide sacrificial layer is discharged：Developer solution soaks, and removes the polyimide sacrificial layer under clamped beam, deionization
Water soaks slightly, absolute ethyl alcohol dehydration, volatilizees, dries under normal temperature.
In the present invention, can intuitively see clamped in the presence of one above the grid for the MESFET for forming ring oscillator
Beam, voltage signal transmit on clamped beam, are not transmitted on grid, N-type MESFET threshold voltage designs be on the occasion of,
P-type MESFET threshold voltage designs are negative value, and the absolute value of N-type MESFET and p-type MESFET threshold voltage is designed as
Equal, the actuation voltage of clamped beam is designed as equal with the absolute value of MESFET threshold voltage.When MESFET clamped beams are with
When voltage between pulling electrode is less than threshold voltage absolute value, the clamped beam of suspension, which is in up states, to be absorbed, now
Have a lamellar spacing between the clamped beam and grid of suspension, so as to cause MESFET to turn on, also just because of this, DC leakage
Stream has obtained good suppression；When the voltage between MESFET clamped beams and pull-down electrode is more than threshold voltage absolute value,
The clamped beam of suspension will be adsorbed on grid, and MESFET turns on regard to this.
Beneficial effect：The ring oscillator of the gallium nitride base low-leakage current clamped beam of the present invention has the clamped beam knot to suspend
Structure, the DC leakage current of grid is greatly reduced, so as to largely reduce the power consumption of ring oscillator, improves ring
The job stability of shape oscillator.
Brief description of the drawings
Fig. 1, Fig. 2 are the schematic diagram of the ring oscillator of the gallium nitride base low-leakage current clamped beam of the present invention,
Fig. 3 is the top view of the ring oscillator of the gallium nitride base low-leakage current clamped beam of the present invention,
Fig. 4 be Fig. 3 gallium nitride base low-leakage current clamped beams ring oscillator P-P ' to profile,
Fig. 5 be Fig. 3 gallium nitride base low-leakage current clamped beams ring oscillator A-A ' to profile,
Fig. 6 be Fig. 3 gallium nitride base low-leakage current clamped beams ring oscillator B-B ' to profile,
Figure includes：Semi-insulating type GaN substrate 1, p-type MESFET source electrode 2, p-type MESFET drain electrode 3, N-type MESFET
Source electrode 4, N-type MESFET drain electrode 5, N-type MESFET raceway grooves 6, p-type MESFET raceway grooves 7, anchor area 8, clamped beam 9, pull-down electrode
10, silicon nitride medium layer 11, power line 12, ground wire 13, lead 14, grid 15, p-type MESFET16, N-type MESFET17.
Embodiment
The ring oscillator of the gallium nitride base low-leakage current clamped beam of the present invention is made up of three phase inverters, and they are first
Tail, which connects, forms ring-type, and whole ring oscillator is made based on semi-insulating type GaN substrate 1, and three phase inverters pass through lead
14 realize interconnection, and each phase inverter is made up of clamped beam N-type MESFET17 and clamped beam p-type MESFET16 again.
N-type MESFET17 and p-type MESFET16 clamped beam 9 is suspended in above grid 15, and the anchor area 8 of grid
It is deposited in semi-insulating type GaN substrate 1, there are two pull-down electrodes 10 below clamped beam 9, they is distributed in grid 15 and anchor area
Between 8, the pull-down electrode 10 of the wherein lower section of N-type MESFET clamped beams 9 is ground connection, and under the lower section of p-type MESFET clamped beams 9
Pulling electrode 10 connects power supply, covered with silicon nitride medium layer 11 in pull-down electrode 10.
In the present invention, N-type MESFET17 threshold voltage designs are on the occasion of p-type MESFET16 threshold voltage designs
Equal, the drop-down electricity of clamped beam is designed as the absolute value of negative value, and N-type MESFET17 and p-type MESFET16 threshold voltage
Pressure is designed as equal with the absolute value of MESFET threshold voltage.When the voltage between MESFET clamped beams and pull-down electrode is less than
When threshold voltage absolute value, the clamped beam 9 of suspension will not absorb, so as to cause MESFET to turn on, also just
Because therefore, DC leakage current has obtained good suppression；When the voltage between MESFET clamped beam and pull-down electrode is more than threshold value
When absolute value of voltage, the clamped beam 9 of suspension will be adsorbed on grid 15, and MESFET turns on regard to this, start normal work.
The preparation method of the ring oscillator of gallium nitride base low-leakage current clamped beam includes following steps：
1) semi-insulating type GaN substrate 1 is prepared；
2) one layer of silicon nitride, photoetching and etch silicon nitride are deposited, removes the silicon nitride of p-type MESFET channel regions 7；
3) p-type MESFET Channeling implantations：Boron is injected, is annealed in a nitrogen environment；After the completion of annealing, carry out at high temperature miscellaneous
Matter redistributes, and forms p-type MESFET channel region 7；
4) silicon nitride layer is removed：Silicon nitride is all removed using dry etching technology；
5) one layer of silicon nitride, photoetching and etch silicon nitride are deposited, removes the silicon nitride of N-type MESFET channel regions 6；
6) N-type MESFET Channeling implantations：Phosphorus is injected, is annealed in a nitrogen environment；After the completion of annealing, carry out at high temperature miscellaneous
Matter redistributes, and forms N-type MESFET channel region 6；
7) silicon nitride layer is removed：Silicon nitride is all removed using dry etching technology；
8) photoetched grid 15, the photoresist in grid region is removed；
9) electron beam evaporation titanium/platinum/gold；
10) titanium/platinum/gold on remaining photoresist and photoresist is removed；
11) heat, titanium/platinum/billon is formed schottky junctions with p-type MESFET raceway grooves 7 and N-type MESFET raceway grooves 6
Touch；
12) photoresist is coated, photoetching simultaneously etches N-type MESFET source electrodes 4 and the photoresist in 5 regions that drain；
13) N-type heavy doping is carried out to the region, in the N-type heavy doping that N-type MESFET source electrodes 4 and 5 regions of drain electrode are formed
Area, carry out short annealing processing；
14) photoresist is coated, photoetching simultaneously etches p-type MESFET source electrodes 4 and the photoresist in 5 regions that drain；
15) p-type heavy doping is carried out to the region, in the p-type heavy doping that p-type MESFET source electrodes 2 and 3 regions of drain electrode are formed
Area, carry out short annealing processing；
16) photoetching source electrode and drain electrode, source electrode and the photoresist of drain electrode are removed；
17) it is evaporated in vacuo gold germanium ni au；
18) the gold germanium ni au on photoresist and photoresist is removed；
19) alloying forms Ohmic contact, forms source electrode and drain electrode；
20) photoresist is coated, removes 8, the anchor area of power line 12, ground wire 13, lead 14, pull-down electrode 10 and clamped beam
The photoresist put；
21) first layer gold is evaporated, its thickness is about 0.3 μm；
22) gold on photoresist and photoresist is removed, forms power line 12, ground wire 13, lead 14, the and of pull-down electrode 10
The anchor area 8 of clamped beam；
23) one layer is depositedThick silicon nitride；
24) photoetching and etch nitride silicon dielectric layer, the silicon nitride medium layer 11 being retained in pull-down electrode 10；
25) deposit and photoetching polyimide sacrificial layer：The polyimide sacrificial layer of 1.6 μ m-thicks is coated in GaN substrate,
Ask and fill up pit；Photoetching polyimide sacrificial layer, only retain the sacrifice layer of the lower section of clamped beam 9；
26) titanium/gold/titanium is evaporated, its thickness is 500/1500/；
27) photoetching：The photoresist in place will be electroplated by removing；
28) plating gold, its thickness are 2 μm；
29) photoresist is removed：The photoresist in place need not be electroplated by removing；
30) titanium/gold/titanium is anti-carved, corrodes down payment, forms MEMS clamped beams 9；
31) polyimide sacrificial layer is discharged：Developer solution soaks, and removes the polyimide sacrificial layer under clamped beam, deionization
Water soaks slightly, absolute ethyl alcohol dehydration, volatilizees, dries under normal temperature.
Present invention be distinguished in that：
The present invention can effectively reduce the leaky in ring oscillator, and greatly reduce ring oscillator in work
Power consumption when making, in the present invention, N-type MESFET threshold voltage designs are on the occasion of p-type MESFET threshold voltage designs are
Negative value, and the absolute value of N-type MESFET and p-type MESFET threshold voltage is designed as equal, the actuation voltage design of clamped beam
Absolute value for the threshold voltage with MESFET is equal, and MESFET clamped beam is made up of Au materials, and the clamped beam is to suspend
Above grid, fixed beam structure is constituted by anchor area.When the voltage between MESFET clamped beams and pull-down electrode is less than threshold
When threshold voltage absolute value, the clamped beam of suspension will not absorb, the DC leakage current very little inside ring oscillator；When
When voltage between MESFET clamped beam and pull-down electrode is more than threshold voltage absolute value, the clamped beam of suspension will adsorb
To grid, MESFET conductings, due to the reduction of grid leakage current, the power consumption of ring oscillator also reduces.
Meet that the structure of conditions above is considered as the ring oscillator of the gallium nitride base low-leakage current clamped beam of the present invention.
Claims (2)
1. a kind of ring oscillator of gallium nitride base low-leakage current clamped beam, it is characterised in that the oscillator is by three phase inverter head
Tail is connected and formed, and three phase inverters are made up of the N-type MESFET with MEMS fixed beam structures and p-type MESFET, the ring
Shape oscillator is based on semi-insulating type GaN substrate (1), N-type MESFET (17) therein and p-type MESFET (16) respectively by source electrode,
Drain electrode, grid and raceway groove composition, they are owned by a clamped beam being suspended in above grid (15) (9), the clamped beam (9) by
Au materials make, and are provided with two pull-down electrodes (10) below the clamped beam (9), they be distributed in grid (15) and anchor area (8) it
Between, the pull-down electrode (10) below wherein N-type MESFET clamped beam (9) is grounded, below p-type MESFET clamped beam (9)
Pull-down electrode (10) connects power supply, covered with silicon nitride medium layer (11) in pull-down electrode (10)；
Voltage signal is loaded on clamped beam (9), is not attached on grid (15), N-type MESFET (17) threshold value
It on the occasion of, p-type MESFET (16) threshold voltage designs is negative value that voltage design, which is, and N-type MESFET (17) and p-type MESFET
(16) absolute value of threshold voltage is designed as equal, and the actuation voltage of clamped beam (9) is designed as and N-type MESFET (17) and P
The absolute value of type MESFET (16) threshold voltage is equal；When the voltage between clamped beam (9) and pull-down electrode (10) is less than threshold value
When absolute value of voltage, suspension clamped beam (9) will not absorb, between the clamped beam (9) and grid (15) that now suspend
There is a lamellar spacing, also just because of this, DC leakage current has obtained good suppression；
When wherein having high level on the clamped beam (9) of some MESFET phase inverter, then N-type MESFET (17) clamped beam
(9) it will pull down and be labelled on grid (15), N-type MESFET (17) turns on regard to this, and p-type MESFET (16) is in ending shape
State, now MESFET phase inverters output low level is opposite, when having low level on the clamped beam (9) of the MESFET phase inverters
When, then N-type MESFET (17) cut-offs, p-type MESFET (16) conductings, phase inverter output high level；Because three phase inverters circulate
Connecting, the output of previous phase inverter is exactly the input of latter phase inverter, therefore these three MESFET phase inverters produce self-oscillation,
So as to form ring oscillator.
2. a kind of preparation method of the ring oscillator of gallium nitride base low-leakage current clamped beam as claimed in claim 1, it is special
Sign is that the preparation method is as follows：
1) prepares semi-insulating type GaN substrate；
2) deposits one layer of silicon nitride, photoetching and etch silicon nitride, removes the silicon nitride of p-type MESFET channel regions；
3) .P types MESFET Channeling implantations：Boron is injected, is annealed in a nitrogen environment；After the completion of annealing, impurity is carried out at high temperature
Redistribution, form p-type MESFET channel region；
4) removes silicon nitride layer：Silicon nitride is all removed using dry etching technology；
5) deposits one layer of silicon nitride, photoetching and etch silicon nitride, removes the silicon nitride of N-type MESFET channel regions；
6) .N types MESFET Channeling implantations：Phosphorus is injected, is annealed in a nitrogen environment；After the completion of annealing, impurity is carried out at high temperature
Redistribution, form N-type MESFET channel region；
7) removes silicon nitride layer：Silicon nitride is all removed using dry etching technology；
8) photoetched grids, the photoresist in grid region is removed；
9) electron beam evaporations titanium/platinum/gold；
10) removes titanium/platinum/gold on remaining photoresist and photoresist；
11) is heated, and titanium/platinum/billon is formed Schottky contacts with p-type MESFET raceway grooves and N-type MESFET raceway grooves；
12) coats photoresist, and photoetching simultaneously etches N-type MESFET source electrodes and the photoresist of drain region；
13) carries out N-type heavy doping to N-type MESFET source electrodes and drain region, is formed in N-type MESFET source electrodes and drain region
N-type heavily doped region, carry out short annealing processing；
14) coats photoresist, and photoetching simultaneously etches p-type MESFET source electrodes and the photoresist of drain region；
15) carries out p-type heavy doping to p-type MESFET source electrodes and drain region, is formed in p-type MESFET source electrodes and drain region
P-type heavily doped region, carry out short annealing processing；
16) photoetching source electrode and drain electrode, source electrode and the photoresist of drain electrode are removed；
17) is evaporated in vacuo gold germanium ni au；
18) removes the gold germanium ni au on photoresist and photoresist；
19) alloyings form Ohmic contact, form source electrode and drain electrode；
20) coats photoresist, removes the photoresist of the anchor zone position of power line, ground wire, lead, pull-down electrode and clamped beam；
21) evaporates first layer gold, and its thickness is 0.3 μm；
22) removes the gold on photoresist and photoresist, forms the anchor of power line, ground wire, lead, pull-down electrode and clamped beam
Area；
23) deposits one layerThick silicon nitride；
24) photoetching and etch nitride silicon dielectric layer, the silicon nitride being retained in pull-down electrode；
25) deposits and photoetching polyimide sacrificial layer：The polyimide sacrificial layer of 1.6 μ m-thicks is coated in GaN substrate, it is desirable to
Fill up pit；Photoetching polyimide sacrificial layer, only retain the sacrifice layer below clamped beam；
26) evaporates titanium/gold/titanium, and its thickness is 500/1500/
27) photoetching：The photoresist in place will be electroplated by removing；
28) plating gold, its thickness are 2 μm；
29) removes photoresist：The photoresist in place need not be electroplated by removing；
30) anti-carves titanium/gold/titanium, corrodes down payment, forms MEMS clamped beams；
31) discharges polyimide sacrificial layer：Developer solution soaks, and removes the polyimide sacrificial layer under clamped beam, deionized water is slightly
Slightly soak, absolute ethyl alcohol dehydration, volatilize, dry under normal temperature.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0805553A1 (en) * | 1996-05-02 | 1997-11-05 | STMicroelectronics S.r.l. | Voltage-controlled oscillator and phase lock circuit incorporating this oscillator |
| CN102735925A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based frequency detector and detection method |
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
-
2015
- 2015-07-01 CN CN201510378329.6A patent/CN104993819B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0805553A1 (en) * | 1996-05-02 | 1997-11-05 | STMicroelectronics S.r.l. | Voltage-controlled oscillator and phase lock circuit incorporating this oscillator |
| CN102735925A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based frequency detector and detection method |
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
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