CN104992939B - The ring oscillator and preparation method of gallium nitride base low-leakage current cantilever beam - Google Patents
The ring oscillator and preparation method of gallium nitride base low-leakage current cantilever beam Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 58
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 40
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 40
- 238000001259 photo etching Methods 0.000 claims description 29
- 239000010931 gold Substances 0.000 claims description 28
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 26
- 229910052737 gold Inorganic materials 0.000 claims description 26
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 21
- 229910052719 titanium Inorganic materials 0.000 claims description 20
- 239000010936 titanium Substances 0.000 claims description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 239000004642 Polyimide Substances 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 229920001721 polyimide Polymers 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000005465 channeling Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
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- 238000002513 implantation Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
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- 238000005566 electron beam evaporation Methods 0.000 claims description 3
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- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 230000000717 retained effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 2
- 238000002242 deionisation method Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 3
- 230000001629 suppression Effects 0.000 abstract description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The ring oscillator of the gallium nitride base low-leakage current cantilever beam of the present invention is joined end to end by three phase inverters and formed, the ring oscillator is based on GaN substrate, N-type MESFET and p-type MESFET therein grid are suspended in the cantilever beam above p-type GaAs substrates, the cantilever beam is that Au materials make, there is a pull-down electrode below cantilever beam, pull-down electrode ground connection wherein below N-type MESFET cantilever beams, and the pull-down electrode below p-type MESFET cantilever beams connects power supply, when the voltage between MESFET cantilever beams and pull-down electrode is less than threshold voltage absolute value, cantilever beam will not draw, now there is a layer of air gap between cantilever beam and grid, so as to cause MESFET to turn on, so grid leakage current has just obtained good suppression；When the voltage between MESFET cantilever beam and pull-down electrode is more than threshold voltage absolute value, cantilever beam can be just adsorbed on grid, and MESFET turns on regard to this.
Description
Technical field
The present invention proposes the ring oscillator of gallium nitride base low-leakage current cantilever beam, belongs to the skill of microelectromechanical systems
Art field.
Background technology
In integrated circuit fields, phase inverter is a kind of most basic device, and it is widely used in the advantage of uniqueness
In various circuits, its ring oscillator is exactly that most common one kind is applied, the annular being made up of odd number phase inverter
Oscillator because its circuit is simple, starting of oscillation easily, small volume, be easy to the advantages that integrated, instead of traditional quartz (controlled) oscillator and
Become the main flow in integrated circuit.At present, due to the electron transfer of GaN metals-semiconductor field effect transistor (MESFET)
Rate is high, operating temperature range is wide, carrier velocity is fast, strong antijamming capability, thus utilizes GaN field-effect transistors (MESFET)
The ring oscillator of making just has the advantage of uniqueness, but simultaneously, with the continuous reduction of device size, the rule of integrated circuit
Mould is increasing, and clock frequency also becomes more and more higher, and under this main trend, the ring oscillator of traditional MESFET manufactures is just
There is the problem of power consumption is too high, this stability to ring oscillator is a huge challenge.
For the ring oscillator of MESFET element manufacturings, its power consumption a big chunk reason is because of leakage current
In the presence of.Leakage current has two kinds of situations, and a kind of is OFF state channel leak current when MESFET devices are in cut-off state, this leakage
Current leakage between source can cause the quiescent dissipation of system to increase；Another leakage current is gate leakage current, this electric leakage
Stream can bring the heating of device to increase, and power consumption becomes big.And it is current, the research for reduction leakage current is also relatively fewer, the present invention
A kind of ring oscillator of the beam type of the gate leakage current with very little is exactly devised in GaN substrate.
The content of the invention
Technical problem：It is an object of the invention to provide a kind of ring oscillator and system of gallium nitride base low-leakage current cantilever beam
Preparation Method, ring oscillator are to be connected into loop circuit by odd number phase inverter is end to end, when ring oscillator produces self-excitation
It is in the ideal case, on the grid of this odd number phase inverter no electric current during vibration, but in practical situations both, due to
MESFET grid is capacitively coupled on the raceway groove of device, and Schottky barrier is formd with substrate, i.e., gold-half contacts, because
And grid leakage current is inevitably produced, just because of this grid leakage current, the performance of ring oscillator can just decline,
And the just extremely effective grid leakage current reduced in ring oscillator of the invention, so as to which ring can also be reduced to a certain extent
The power consumption of shape oscillator.
Technical scheme：The ring oscillator of the gallium nitride base low-leakage current cantilever beam of the present invention is made up of three phase inverters
, their end to end composition ring-types, whole ring oscillator is made based on semi-insulating type GaN substrate, three phase inverters
Realized and interconnected by lead, each phase inverter is made up of cantilever beam N-type MESFET and cantilever beam p-type MESFET, N-type MESFET
It is suspended in p-type MESFET cantilever beam on grid, the anchor area of cantilever beam is deposited in semi-insulating type GaN substrate, under cantilever beam
Fang Youyi pull-down electrode, it is distributed between grid and anchor area, wherein the pull-down electrode below N-type MESFET cantilever beams is ground connection
, and the pull-down electrode below p-type MESFET cantilever beams connects power supply, covered with silicon nitride medium layer in pull-down electrode.
The cantilever beam for forming the MESFET of ring oscillator is made by Au materials, and it is suspended in above grid, is formed
Cantilever beam structure, voltage signal are loaded on cantilever beam, without being added on grid, N-type MESFET threshold value electricity
It is negative value that pressure, which is designed as on the occasion of, p-type MESFET threshold voltage designs, and N-type MESFET and p-type MESFET threshold voltage
Absolute value is designed as equal, and the actuation voltage of cantilever beam is designed as equal with the absolute value of MESFET threshold voltage.When
When voltage between MESFET cantilever beams and pull-down electrode is less than threshold voltage absolute value, the cantilever beam of suspension will not adsorb
Get off, so as to cause MESFET to turn on, such grid leakage current has just obtained good suppression；When MESFET cantilever
When voltage between beam and pull-down electrode is more than threshold voltage absolute value, the cantilever beam of suspension will be adsorbed on raceway groove,
MESFET turns on regard to this.
When wherein having high level on the cantilever beam of some MESFET phase inverter, then N-type MESFET cantilever beam will
Drop-down is labelled on grid, and N-type MESFET turns on regard to this, and p-type MESFET is in cut-off state, the now MESFET paraphase
Device exports low level, opposite, when having low level on the cantilever beam of the MESFET phase inverters, then N-type MESFET cut-offs, p-type
MESFET is turned on, phase inverter output high level；Because the circulation of three phase inverters connects, the output of previous phase inverter be exactly it is latter fall
The input of phase device, therefore self-oscillation is just generated, so as to form ring oscillator.
The output end and input of these three phase inverters, which join end to end, forms ring-type, forms ring oscillator, ring oscillation
During device starting of oscillation, it is assumed that the excitation of a high level voltage is obtained on phase inverter cantilever beam, below N-type MESFET cantilever beams
What pull-down electrode connect is low potential, so N-type MESFET cantilever beam will be pulled down and is labelled on grid, N-type MESFET starts
Normally works, and now p-type MESFET is in suspended state；Opposite, when the voltage on cantilever beam is low level
When, p-type MESFET cantilever beam, which can just pull down, to be labelled on grid, and p-type MESFET turns on regard to this, and N-type MESFET ends, three
During phase inverter cooperation, self-oscillation is produced, so as to form ring oscillator, high level voltage herein is greater than MESFET
Threshold voltage absolute value supply voltage, and low level voltage is ground.
The preparation method of the ring oscillator of the gallium nitride base low-leakage current cantilever beam of the present invention is as follows：
1. prepares semi-insulating type GaN substrate；
2. deposits one layer of silicon nitride, photoetching and etch silicon nitride, the silicon nitride of p-type MESFET channel regions is removed；
3. .P type MESFET Channeling implantations：Boron is injected, is annealed in a nitrogen environment；After the completion of annealing, carry out impurity and divide again
Cloth, form p-type MESFET channel region；
4. removes silicon nitride layer：Silicon nitride is all removed using dry etching technology；
5. deposits one layer of silicon nitride, photoetching and etch silicon nitride, the silicon nitride of N-type MESFET channel regions is removed；
6. .N type MESFET Channeling implantations：Phosphorus is injected, is annealed in a nitrogen environment；After the completion of annealing, carry out impurity and divide again
Cloth, form N-type MESFET channel region；
7. removes silicon nitride layer：Silicon nitride is all removed using dry etching technology；
8. one layer of photoresist of coating, photoetched grid, remove the photoresist in grid region；
9. the alloy of three laminates of electron beam evaporations titanium/platinum/gold, form grid；
10. removes the alloy of three laminates of remaining photoresist and titanium/platinum/gold on photoresist；
Heating, make the alloy and p-type MESFET raceway grooves and N-type MESFET ditches of three laminates of titanium/platinum/gold
Road forms Schottky contacts；
Photoresist is coated, photoetching simultaneously etches N-type MESFET source electrodes and the photoresist of drain region；
The region for needing to be formed source class and drain to N-type MESFET carries out N-type heavy doping, in N-type MESFET source electrodes and
The N-type heavily doped region that drain region is formed, carry out short annealing processing；
Photoresist is coated, photoetching simultaneously etches p-type MESFET source electrodes and the photoresist of drain region；
The region for needing to be formed source class and drain to p-type MESFET carries out p-type heavy doping, in p-type MESFET source electrodes and
The p-type heavily doped region that drain region is formed, carry out short annealing processing；
One layer of photoresist, photoetching source electrode and drain electrode are coated with, removes source electrode and the photoresist of drain electrode；
It is evaporated in vacuo the alloy of two laminates of gold germanium ni au；
Remove the alloy of two laminates of the gold germanium ni au on remaining photoresist and photoresist；
Alloying formation Ohmic contact is carried out to N-type MESFET and p-type MESFET source class and drain, forms source electrode
With the contact zone of drain electrode；
Photoresist is coated, removes the photoetching of the anchor zone position of power line, ground wire, lead, pull-down electrode and cantilever beam
Glue；
First layer gold is evaporated, its thickness is 0.3 μm；
The gold on photoresist and photoresist is removed, forms power line, ground wire, lead, pull-down electrode and cantilever beam
Anchor area；
One layer of depositThick silicon nitride；
Photoetching and etch nitride silicon dielectric layer, the silicon nitride being retained in pull-down electrode；
Deposit simultaneously photoetching polyimide sacrificial layer：The polyimide sacrificial layer of 1.6 μ m-thicks is coated in GaN substrate,
Ask and fill up pit；Photoetching polyimide sacrificial layer, only retain the sacrifice layer below cantilever beam；
In region re-evaporation titanium/gold/titanium of evaporation first layer gold, its thickness is
One layer of photoresist of coating and photoetching：Removal needs to form the photoresist in the region of transmission line；
Plating gold, its thickness are 2 μm；
Remove photoresist：Remove remaining local photoresist；
Corrode titanium/gold/titanium layer, ultimately form MEMS cantilever beams；
Discharge polyimide sacrificial layer：Developer solution soaks, and removes the polyimide sacrificial layer under cantilever beam, deionized water
Immersion, absolute ethyl alcohol are dehydrated, and are volatilized, are dried under normal temperature.
In the present invention, N-type MESFET threshold voltage designs are on the occasion of p-type MESFET threshold voltage designs are negative
Value, and the absolute value of N-type MESFET and p-type MESFET threshold voltage is designed as equal, the actuation voltage of cantilever beam is designed as
It is equal with the absolute value of MESFET threshold voltage.When the voltage between MESFET cantilever beams and pull-down electrode is exhausted less than threshold voltage
When to value, cantilever beam, which does not obtain enough attractions, to be absorbed, and now have one layer between cantilever beam and grid
The air gap, bias voltage is obtained on grid, so as to cause MESFET to turn on, such grid leakage current must
Good suppression is arrived；When the voltage between MESFET cantilever beam and pull-down electrode is more than threshold voltage absolute value, hang
Arm beam can be just adsorbed on grid, and now MESFET is just turned on.
Beneficial effect：The ring oscillator of the gallium nitride base low-leakage current cantilever beam of the present invention has the cantilever beam knot to suspend
Structure, the DC leakage current of grid is greatly reduced, so as to largely reduce the power consumption of ring oscillator, improves ring
The job stability of shape oscillator.
Brief description of the drawings
Fig. 1, Fig. 2 are the schematic diagram of the ring oscillator of the gallium nitride base low-leakage current cantilever beam of the present invention,
Fig. 3 is the top view of the ring oscillator of the gallium nitride base low-leakage current cantilever beam of the present invention,
Fig. 4 be Fig. 3 gallium nitride base low-leakage current cantilever beams ring oscillator P-P ' to profile,
Fig. 5 be Fig. 3 gallium nitride base low-leakage current cantilever beams ring oscillator A-A ' to profile,
Fig. 6 be Fig. 3 gallium nitride base low-leakage current cantilever beams ring oscillator B-B ' to profile,
Figure includes：Power line 1, ground wire 2, lead 3, anchor area 4, cantilever beam 5, pull-down electrode 6 be (wherein p-type MESFET's
Pull-down electrode 6a, N-type MESFET pull-down electrode 6b), silicon nitride medium layer 7, p-type MESFET source electrode 8, p-type MESFET's
Drain electrode 9, N-type MESFET source electrode 10, N-type MESFET drain electrode 11, N-type MESFET raceway grooves 12, p-type MESFET raceway grooves 13, grid
Pole 14, semi-insulating type GaN substrate 15, p-type MESFET16, N-type MESFET17.
Embodiment
The ring oscillator of the gallium nitride base low-leakage current cantilever beam of the present invention is made up of three phase inverters, and they are first
Tail, which connects, forms ring-type, and whole ring oscillator is made based on semi-insulating type GaN substrate 15, and three phase inverters pass through lead
3 realize interconnection, and each phase inverter is made up of cantilever beam N-type MESFET and cantilever beam p-type MESFET again, N-type MESFET and P
Type MESFET cantilever beam 5 is suspended on grid 14, and the anchor area 4 of cantilever beam is deposited in semi-insulating type GaN substrate 15,
There is a pull-down electrode 6 below cantilever beam 5, be distributed between grid 14 and anchor area 4, wherein the lower section of N-type MESFET cantilever beams 5
Pull-down electrode 6a be ground connection, and the pull-down electrode 6b of the lower section of p-type MESFET cantilever beams 5 connects power supply, in pull-down electrode 6
Covered with silicon nitride medium layer 7.
In the present invention, N-type MESFET17 threshold voltage designs are on the occasion of p-type MESFET16 threshold voltage designs
Equal, the drop-down electricity of cantilever beam 5 is designed as the absolute value of negative value, and N-type MESFET17 and p-type MESFET16 threshold voltage
Pressure is designed as equal with the absolute value of MESFET threshold voltage.When the voltage between MESFET cantilever beams and pull-down electrode is less than threshold
When threshold voltage absolute value, the cantilever beam 5 of suspension will not absorb, so as to cause MESFET to turn on, such grid
Pole leakage current has just obtained good control；When the voltage between MESFET cantilever beam and pull-down electrode is absolute more than threshold voltage
When value, the cantilever beam 5 of suspension will be adsorbed on grid 14, and MESFET turns on regard to this, start normal work.
The preparation method of the ring oscillator of gallium nitride base low-leakage current cantilever beam includes following steps：
1. prepares semi-insulating type GaN substrate；
2. deposits one layer of silicon nitride, photoetching and etch silicon nitride, the silicon nitride of p-type MESFET channel regions is removed；
3. .P type MESFET Channeling implantations：Boron is injected, is annealed in a nitrogen environment；After the completion of annealing, carry out impurity and divide again
Cloth, form p-type MESFET channel region；
4. removes silicon nitride layer：Silicon nitride is all removed using dry etching technology；
5. deposits one layer of silicon nitride, photoetching and etch silicon nitride, the silicon nitride of N-type MESFET channel regions is removed；
6. .N type MESFET Channeling implantations：Phosphorus is injected, is annealed in a nitrogen environment；After the completion of annealing, carry out impurity and divide again
Cloth, form N-type MESFET channel region；
7. removes silicon nitride layer：Silicon nitride is all removed using dry etching technology；
8. one layer of photoresist of coating, photoetched grid, remove the photoresist in grid region；
9. the alloy of three laminates of electron beam evaporations titanium/platinum/gold, form grid；
10. removes the alloy of three laminates of remaining photoresist and titanium/platinum/gold on photoresist；
Heating, make the alloy and p-type MESFET raceway grooves and N-type MESFET raceway grooves of three laminates of titanium/platinum/gold
Form Schottky contacts；
Photoresist is coated, photoetching simultaneously etches N-type MESFET source electrodes and the photoresist of drain region；
The region for needing to be formed source class and drain to N-type MESFET carries out N-type heavy doping, in N-type MESFET source electrodes and
The N-type heavily doped region that drain region is formed, carry out short annealing processing；
Photoresist is coated, photoetching simultaneously etches p-type MESFET source electrodes and the photoresist of drain region；
The region for needing to be formed source class and drain to p-type MESFET carries out p-type heavy doping, in p-type MESFET source electrodes and
The p-type heavily doped region that drain region is formed, carry out short annealing processing；
One layer of photoresist, photoetching source electrode and drain electrode are coated with, removes source electrode and the photoresist of drain electrode；
It is evaporated in vacuo the alloy of two laminates of gold germanium ni au；
Remove the alloy of two laminates of the gold germanium ni au on remaining photoresist and photoresist；
Alloying formation Ohmic contact is carried out to N-type MESFET and p-type MESFET source class and drain, forms source electrode
With the contact zone of drain electrode；
Photoresist is coated, removes the photoetching of the anchor zone position of power line, ground wire, lead, pull-down electrode and cantilever beam
Glue；
First layer gold is evaporated, its thickness is 0.3 μm；
The gold on photoresist and photoresist is removed, forms power line, ground wire, lead, pull-down electrode and cantilever beam
Anchor area；
One layer of depositThick silicon nitride；
Photoetching and etch nitride silicon dielectric layer, the silicon nitride being retained in pull-down electrode；
Deposit simultaneously photoetching polyimide sacrificial layer：The polyimide sacrificial layer of 1.6 μ m-thicks is coated in GaN substrate,
Ask and fill up pit；Photoetching polyimide sacrificial layer, only retain the sacrifice layer below cantilever beam；
In region re-evaporation titanium/gold/titanium of evaporation first layer gold, its thickness is
One layer of photoresist of coating and photoetching：Removal needs to form the photoresist in the region of transmission line；
Plating gold, its thickness are 2 μm；
Remove photoresist：Remove remaining local photoresist；
Corrode titanium/gold/titanium layer, ultimately form MEMS cantilever beams；
Discharge polyimide sacrificial layer：Developer solution soaks, and removes the polyimide sacrificial layer under cantilever beam, deionized water
Immersion, absolute ethyl alcohol are dehydrated, and are volatilized, are dried under normal temperature.
Present invention be distinguished in that：
The present invention can effectively reduce the grid leakage current in ring oscillator, and reduce ring oscillation to a certain extent
The power consumption of device at work, in the present invention, one is left floating above the grid for the MESFET devices for forming ring oscillator and is hanged
Arm beam, cantilever beam structure is constituted by anchor area, MESFET cantilever beam is made by Au materials.N-type MESFET threshold value
It on the occasion of, p-type MESFET threshold voltage designs is negative value that voltage design, which is, and N-type MESFET and p-type MESFET threshold voltage
Absolute value be designed as equal, the actuation voltage of cantilever beam is designed as equal with the absolute value of MESFET threshold voltage.When
When voltage between MESFET cantilever beams and pull-down electrode is less than threshold voltage absolute value, cantilever beam will not absorb, from
And cause MESFET to end, therefore the grid leakage current in ring oscillator is greatly lowered；When MESFET cantilever beam with
When voltage between pull-down electrode is more than threshold voltage absolute value, cantilever beam will be adsorbed on grid, and MESFET is led with regard to this
Logical, due to the reduction of grid leakage current, the power consumption of the ring oscillator also reduces.
Meet that the structure of conditions above is considered as the ring oscillator of the gallium nitride base low-leakage current cantilever beam of the present invention.
Claims (2)
1. a kind of ring oscillator of gallium nitride base low-leakage current cantilever beam, it is characterised in that the oscillator is by three phase inverter structures
Into, their end to end composition ring-types, whole ring oscillator is made based on semi-insulating type GaN substrate (15), three
Phase inverter realizes and interconnected that each phase inverter is made up of cantilever beam N-type MESFET and cantilever beam p-type MESFET by lead (3), should
N-type MESFET (17) and p-type MESFET (16) cantilever beam (5) is suspended on grid (14), and the anchor area (4) of cantilever beam is deposited on half
In insulated type GaN substrate (15), there is a pull-down electrode (6) below cantilever beam (5), be distributed in grid (14) and anchor area (4)
Between, the pull-down electrode (6b) of the N-type MESFET wherein below N-type MESFET (17) cantilever beam (5) is ground connection, and p-type
The pull-down electrode (6a) of p-type MESFET below MESFET (16) cantilever beam (5) connects power supply, and pull-down electrode covers on (6)
There is silicon nitride medium layer (7).
2. a kind of preparation method of the ring oscillator of gallium nitride base low-leakage current cantilever beam as claimed in claim 1, it is special
Sign is that the preparation method is as follows：
1. prepares semi-insulating type GaN substrate；
2. deposits one layer of silicon nitride, photoetching and etch silicon nitride, the silicon nitride of p-type MESFET channel regions is removed；
3. .P type MESFET Channeling implantations：Boron is injected, is annealed in a nitrogen environment；After the completion of annealing, dopant redistribution, shape are carried out
Into p-type MESFET channel region；
4. removes silicon nitride layer：Silicon nitride is all removed using dry etching technology；
5. deposits one layer of silicon nitride, photoetching and etch silicon nitride, the silicon nitride of N-type MESFET channel regions is removed；
6. .N type MESFET Channeling implantations：Phosphorus is injected, is annealed in a nitrogen environment；After the completion of annealing, dopant redistribution, shape are carried out
Into N-type MESFET channel region；
7. removes silicon nitride layer：Silicon nitride is all removed using dry etching technology；
8. one layer of photoresist of coating, photoetched grid, remove the photoresist in grid region；
9. the alloy of three laminates of electron beam evaporations titanium/platinum/gold, form grid；
Remove the alloy of three laminates of titanium/platinum/gold on remaining photoresist and photoresist；
Heating, makes the alloy of three laminates of titanium/platinum/gold be formed with p-type MESFET raceway grooves and N-type MESFET raceway grooves
Schottky contacts；
Photoresist is coated, photoetching simultaneously etches N-type MESFET source electrodes and the photoresist of drain region；
N-type heavy doping is carried out to the N-type MESFET regions for needing to form source class and drain, in N-type MESFET source electrodes and drain electrode
The N-type heavily doped region that region is formed, carry out short annealing processing；
Photoresist is coated, photoetching simultaneously etches p-type MESFET source electrodes and the photoresist of drain region；
P-type heavy doping is carried out to the p-type MESFET regions for needing to form source class and drain, in p-type MESFET source electrodes and drain electrode
The p-type heavily doped region that region is formed, carry out short annealing processing；
One layer of photoresist, photoetching source electrode and drain electrode are coated with, removes source electrode and the photoresist of drain electrode；
It is evaporated in vacuo the alloy of two laminates of gold germanium ni au；
Remove the alloy of two laminates of the gold germanium ni au on remaining photoresist and photoresist；
Alloying formation Ohmic contact is carried out to N-type MESFET and p-type MESFET source class and drain, forms source electrode and drain electrode
Contact zone；
Photoresist is coated, removes the photoresist of the anchor zone position of power line, ground wire, lead, pull-down electrode and cantilever beam；
First layer gold is evaporated, its thickness is 0.3 μm；
The gold on photoresist and photoresist is removed, forms the anchor area of power line, ground wire, lead, pull-down electrode and cantilever beam；
One layer of depositThick silicon nitride；
Photoetching and etch nitride silicon dielectric layer, the silicon nitride being retained in pull-down electrode；
Deposit simultaneously photoetching polyimide sacrificial layer：The polyimide sacrificial layer of 1.6 μ m-thicks is coated in GaN substrate, it is desirable to fill out
Full pit；Photoetching polyimide sacrificial layer, only retain the sacrifice layer below cantilever beam；
In region re-evaporation titanium/gold/titanium of evaporation first layer gold, its thickness is
One layer of photoresist of coating and photoetching：Removal needs to form the photoresist in the region of transmission line；
Plating gold, its thickness are 2 μm；
Remove photoresist：Remove remaining local photoresist；
Corrode titanium/gold/titanium layer, ultimately form MEMS cantilever beams；
Discharge polyimide sacrificial layer：Developer solution soaks, and removes the polyimide sacrificial layer under cantilever beam, deionization water logging
Bubble, absolute ethyl alcohol are dehydrated, and are volatilized, are dried under normal temperature.
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| CN1596507A (en) * | 2001-11-30 | 2005-03-16 | 夏普株式会社 | Oscillator circuit, booster circuit, nonvolatile memory device, and semiconductor device |
| CN102751947A (en) * | 2011-04-20 | 2012-10-24 | 精工爱普生株式会社 | Vibration circuit |
| CN103490725A (en) * | 2013-08-29 | 2014-01-01 | 苏州苏尔达信息科技有限公司 | Voltage controlled ring oscillator |
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| CN102751947A (en) * | 2011-04-20 | 2012-10-24 | 精工爱普生株式会社 | Vibration circuit |
| CN103490725A (en) * | 2013-08-29 | 2014-01-01 | 苏州苏尔达信息科技有限公司 | Voltage controlled ring oscillator |
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