CN104992939A - Annular oscillator of nitride-based low-leakage-current cantilever beam, and preparation method - Google Patents
Annular oscillator of nitride-based low-leakage-current cantilever beam, and preparation method Download PDFInfo
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- CN104992939A CN104992939A CN201510377854.6A CN201510377854A CN104992939A CN 104992939 A CN104992939 A CN 104992939A CN 201510377854 A CN201510377854 A CN 201510377854A CN 104992939 A CN104992939 A CN 104992939A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 51
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 40
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 40
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 32
- 238000001259 photo etching Methods 0.000 claims description 27
- 239000010931 gold Substances 0.000 claims description 26
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 24
- 229910052737 gold Inorganic materials 0.000 claims description 24
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 20
- 239000010936 titanium Substances 0.000 claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 229940044658 gallium nitrate Drugs 0.000 claims description 16
- 239000004642 Polyimide Substances 0.000 claims description 15
- 229920001721 polyimide Polymers 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 7
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 230000005465 channeling Effects 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000000717 retained effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 238000001704 evaporation Methods 0.000 claims 2
- 230000008020 evaporation Effects 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000000725 suspension Substances 0.000 description 5
- 230000005669 field effect Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000004087 circulation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses an annular oscillator of a nitride-based low-leakage-current cantilever beam, and a preparation method. The annular oscillator is formed by connecting three phase inverters in an end-to-end manner. The annular oscillator is based on a GaN substrate. The cantilever beams of N-type MESFETs and the cantilever beams of P-type MESFETs are suspended above grids, the cantilever beams are suspended above a GaAs substrate and are made of an Au material, drawing-down electrodes are disposed below the cantilever beams, the drawing-down electrodes below the cantilever beams of the N-type MESFETs are grounded, and the drawing-down electrodes below the cantilever beams of the P-type MESFETs are connected with a power supply. When voltage between the cantilever beams of the MESFETs and the drawing-down electrodes is smaller than absolute values of threshold voltage, the cantilever beams are not dragged down, at the moment, a layer of air gaps are arranged between the cantilever beams and the grids, as a result, the MESFETs cannot be conducted, and thus leakage current of the grids is well inhibited; and only when the voltage between the cantilever beams of the MESFETs and the drawing-down electrodes is greater than the absolute values of the threshold voltage, can the cantilever beams be absorbed to the grids, and thus the MESFETs are conducted.
Description
Technical field
The present invention proposes the ring oscillator of gallium nitrate based low-leakage current cantilever beam, belong to the technical field of microelectromechanical systems.
Background technology
In integrated circuit fields, phase inverter is the most basic a kind of device, it is widely used in various circuit with the advantage of uniqueness, its ring oscillator is exactly modal one application, the ring oscillator be made up of odd number phase inverter, because its circuit is simple, starting of oscillation is easy, volume is little, be convenient to the advantages such as integrated, instead of traditional quartz (controlled) oscillator and the main flow become in integrated circuit.At present, because the electron mobility of GaN field-effect transistor (MESFET) is high, operating temperature range is wide, carrier velocity is fast, antijamming capability is strong, thus the ring oscillator utilizing GaN field-effect transistor (MESFET) to make just has unique advantage, but simultaneously, constantly how little along with device size, the scale of integrated circuit is increasing, clock frequency also becomes more and more higher, under this main trend, the problem that the ring oscillator that tradition MESFET manufactures just has power consumption too high, this is a huge challenge to the stability of ring oscillator.
For the ring oscillator of MESFET element manufacturing, its power consumption greatly reason is because the existence of leakage current.Leakage current has two kinds of situations, and a kind of MESFET of being device is in OFF state channel leak current during cut-off state, and the current leakage between this drain-source can cause the quiescent dissipation of system to increase; Another kind of leakage current is gate leakage current, and this leakage current can bring the heating of device to increase, and power consumption becomes large.And at present, also relatively less for the research reducing leakage current, the present invention devises a kind of ring oscillator with the beam type of very little gate leakage current in GaN substrate.
Summary of the invention
Technical problem: the ring oscillator and the preparation method that the object of this invention is to provide a kind of gallium nitrate based low-leakage current cantilever beam, ring oscillator is connected into loop circuit by end to end for odd number phase inverter, when ring oscillator produces self-oscillation, in the ideal case, the grid of this odd number phase inverter do not have electric current, but in practical situations both, grid due to MESFET is capacitively coupled on the raceway groove of device, Schottky barrier is defined with substrate, i.e. gold-half contact, thus inevitably grid leakage current is produced, just because of this grid leakage current, the performance of ring oscillator just can decline, and the present invention just very effectively reduces the grid leakage current in ring oscillator, thus also can reduce the power consumption of ring oscillator to a certain extent.
Technical scheme: the ring oscillator of gallium nitrate based low-leakage current cantilever beam of the present invention is made up of three phase inverters, their end to end formation ring-types, whole ring oscillator makes based on semi-insulating type GaN substrate, three phase inverters realize interconnection by lead-in wire, each phase inverter is made up of cantilever beam N-type MESFET and cantilever beam P type MESFET, the cantilever beam of this N-type MESFET and P type MESFET is suspended on grid, the anchor district of cantilever beam is deposited in semi-insulating type GaN substrate, a pull-down electrode is had below cantilever beam, be distributed between grid and anchor district, pull-down electrode wherein below N-type MESFET cantilever beam is ground connection, and the pull-down electrode below P type MESFET cantilever beam connects power supply, pull-down electrode is coated with silicon nitride medium layer.
The cantilever beam of the MESFET of looping oscillator is made by Au material, it is suspended in above grid, constitute cantilever beam structure, voltage signal is loaded on cantilever beam, instead of be added on grid, the threshold voltage designs of N-type MESFET be on the occasion of, the threshold voltage designs of P type MESFET is negative value, and the absolute value of the threshold voltage of N-type MESFET and P type MESFET is designed to equal, the actuation voltage of cantilever beam is designed to equal with the absolute value of the threshold voltage of MESFET.Time voltage between MESFET cantilever beam and pull-down electrode is less than threshold voltage absolute value, the cantilever beam of suspension can not absorb, thus causes MESFET can not conducting, and such grid leakage current just obtains good suppression; Time voltage when between the cantilever beam and pull-down electrode of MESFET is greater than threshold voltage absolute value, the cantilever beam of suspension will be adsorbed on raceway groove, and MESFET is with regard to this conducting.
When having high level on the cantilever beam of wherein some MESFET phase inverters, then the cantilever beam of N-type MESFET will drop-downly be labelled on grid, N-type MESFET is with regard to this conducting, and P type MESFET is still in cut-off state, now this MESFET phase inverter output low level, contrary, when having low level on the cantilever beam of this MESFET phase inverter, then N-type MESFET cut-off, P type MESFET conducting, phase inverter exports high level; Because three phase inverter circulations connect, the output of last phase inverter is exactly the input of a rear phase inverter, therefore just creates self-oscillation, thus looping oscillator.
The output of these three phase inverters and input join end to end formation ring-type, composition ring oscillator, during ring oscillator starting of oscillation, suppose excitation phase inverter cantilever beam obtaining a high level voltage, what connect due to the pull-down electrode below N-type MESFET cantilever beam is electronegative potential, so the cantilever beam of N-type MESFET will be drop-down and be labelled on grid, N-type MESFET starts normally work, and now P type MESFET is still in suspended state; Contrary, when the voltage on cantilever beam is low level, the cantilever beam of P type MESFET just can drop-downly be labelled on grid, P type MESFET is with regard to this conducting, and N-type MESFET cut-off, during three phase inverter co-operation, produce self-oscillation, thus formation ring oscillator, high level voltage is herein the supply voltage of the threshold voltage absolute value being greater than MESFET, and namely low level voltage is ground.
The preparation method of the ring oscillator of gallium nitrate based low-leakage current cantilever beam of the present invention is as follows:
1) semi-insulating type GaN substrate is prepared;
2) deposit one deck silicon nitride, photoetching etch silicon nitride, remove the silicon nitride of P type MESFET channel region;
3) P type MESFET Channeling implantation: inject boron, anneal in a nitrogen environment; After having annealed, at high temperature carry out dopant redistribution, form the channel region of P type MESFET;
4) silicon nitride layer is removed: adopt dry etching technology all to be removed by silicon nitride;
5) deposit one deck silicon nitride, photoetching etch silicon nitride, remove the silicon nitride of N-type MESFET channel region;
6) N-type MESFET Channeling implantation: inject phosphorus, anneal in a nitrogen environment; After having annealed, at high temperature carry out dopant redistribution, form the channel region of N-type MESFET;
7) silicon nitride layer is removed: adopt dry etching technology all to be removed by silicon nitride;
8) photoetched grid, removes the photoresist in grid region;
9) electron beam evaporation titanium/platinum/gold;
10) titanium/platinum/gold on remaining photoresist and photoresist is removed;
11) heat, make titanium/platinum/billon and P type MESFET raceway groove and N-type MESFET raceway groove form Schottky contacts;
12) photoresist is applied, photoetching the photoresist of etching N type MESFET source electrode and drain region;
13) N-type heavy doping is carried out to this region, in the N-type heavily doped region that N-type MESFET source electrode and drain region are formed, carry out short annealing process;
14) apply photoresist, photoetching also etches the photoresist of P type MESFET source electrode and drain region;
15) heavy doping of P type is carried out to this region, in the P type heavily doped region that P type MESFET source electrode and drain region are formed, carry out short annealing process;
16) photoetching source electrode and drain electrode, removes the photoresist of source electrode and drain electrode;
17) vacuum evaporation gold germanium nickel/gold;
18) gold germanium nickel/gold on photoresist and photoresist is removed;
19) alloying forms ohmic contact, forms source electrode and drain electrode;
20) apply photoresist, remove the photoresist of the anchor zone position of power line, ground wire, lead-in wire, pull-down electrode and cantilever beam;
21) evaporate ground floor gold, its thickness is about 0.3 μm;
22) remove the gold on photoresist and photoresist, form the anchor district of power line, ground wire, lead-in wire, pull-down electrode and cantilever beam;
23) deposit one deck
thick silicon nitride;
24) photoetching etch nitride silicon dielectric layer, is retained in the silicon nitride in pull-down electrode;
25) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in GaN substrate, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below cantilever beam;
26) evaporate titanium/gold/titanium, its thickness is
27) photoetching: remove and will electroplate local photoresist;
28) electrogilding, its thickness is 2 μm;
29) photoresist is removed: remove and do not need to electroplate local photoresist;
30) anti-carve titanium/gold/titanium, corrosion down payment, forms MEMS cantilever beam;
31) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under cantilever beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
In the present invention, the threshold voltage designs of N-type MESFET be on the occasion of, the threshold voltage designs of P type MESFET is negative value, and the absolute value of the threshold voltage of N-type MESFET and P type MESFET is designed to equal, and the actuation voltage of cantilever beam is designed to equal with the absolute value of the threshold voltage of MESFET.Time voltage when between MESFET cantilever beam and pull-down electrode is less than threshold voltage absolute value, cantilever beam does not obtain enough attractions and can not absorb, now there is one deck air gap between cantilever beam and grid, grid does not obtain bias voltage, thus causing MESFET can not conducting, such grid leakage current just obtains good suppression; Time voltage when between the cantilever beam and pull-down electrode of MESFET is greater than threshold voltage absolute value, cantilever beam just can be adsorbed on grid, now MESFET just conducting.
Beneficial effect: the ring oscillator of gallium nitrate based low-leakage current cantilever beam of the present invention has the cantilever beam structure of suspension, reduce the DC leakage current of grid greatly, thus reduce the power consumption of ring oscillator to a great extent, improve the job stability of ring oscillator.
Accompanying drawing explanation
Fig. 1, Fig. 2 are the schematic diagram of the ring oscillator of gallium nitrate based low-leakage current cantilever beam of the present invention,
Fig. 3 is the vertical view of the ring oscillator of gallium nitrate based low-leakage current cantilever beam of the present invention,
Fig. 4 be the ring oscillator of the gallium nitrate based low-leakage current cantilever beam of Fig. 3 P-P ' to profile,
Fig. 5 be the ring oscillator of the gallium nitrate based low-leakage current cantilever beam of Fig. 3 A-A ' to profile,
Fig. 6 be the ring oscillator of the gallium nitrate based low-leakage current cantilever beam of Fig. 3 B-B ' to profile,
Figure comprises: power line 1, ground wire 2, lead-in wire 3, anchor district 4, cantilever beam 5, pull-down electrode 6, the drain electrode 9 of source electrode 8, the P type MESFET of silicon nitride medium layer 7, P type MESFET, drain electrode 11, the N-type MESFET raceway groove 12 of the source electrode 10, N-type MESFET of N-type MESFET, P type MESFET raceway groove 13, grid 14, semi-insulating type GaN substrate 15, P type MESFET16, N-type MESFET17.
Embodiment
The ring oscillator of gallium nitrate based low-leakage current cantilever beam of the present invention is made up of three phase inverters, their end to end formation ring-types, whole ring oscillator makes based on semi-insulating type GaN substrate 15, three phase inverters realize interconnection by lead-in wire 3, each phase inverter is made up of cantilever beam N-type MESFET and cantilever beam P type MESFET again, the cantilever beam 5 of this N-type MESFET and P type MESFET is suspended on grid 14, and the anchor district 4 of cantilever beam is deposited in semi-insulating type GaN substrate 15, a pull-down electrode 6 is had below cantilever beam 5, be distributed between grid 14 and anchor district 4, pull-down electrode 6 wherein below N-type MESFET cantilever beam 5 is ground connection, and the pull-down electrode 6 below P type MESFET cantilever beam 5 connects power supply, pull-down electrode 6 is coated with silicon nitride medium layer 7.
In the present invention, the threshold voltage designs of N-type MESFET17 be on the occasion of, the threshold voltage designs of P type MESFET16 is negative value, and the absolute value of the threshold voltage of N-type MESFET17 and P type MESFET16 is designed to equal, the actuation voltage of cantilever beam 5 is designed to equal with the absolute value of the threshold voltage of MESFET.Time voltage when between MESFET cantilever beam and pull-down electrode is less than threshold voltage absolute value, the cantilever beam 5 of suspension can not absorb, thus causes MESFET can not conducting, and such grid leakage current just obtains good control; Time voltage when between the cantilever beam and pull-down electrode of MESFET is greater than threshold voltage absolute value, the cantilever beam 5 of suspension will be adsorbed on grid 14, and MESFET, with regard to this conducting, starts normally to work.
The preparation method of the ring oscillator of gallium nitrate based low-leakage current cantilever beam comprises following step:
1) semi-insulating type GaN substrate 15 is prepared;
2) deposit one deck silicon nitride, photoetching etch silicon nitride, remove the silicon nitride of P type MESFET channel region 13;
3) P type MESFET Channeling implantation: inject boron, anneal in a nitrogen environment; After having annealed, at high temperature carry out dopant redistribution, form the channel region 13 of P type MESFET;
4) silicon nitride layer is removed: adopt dry etching technology all to be removed by silicon nitride;
5) deposit one deck silicon nitride, photoetching etch silicon nitride, remove the silicon nitride of N-type MESFET channel region 12;
6) N-type MESFET Channeling implantation: inject phosphorus, anneal in a nitrogen environment; After having annealed, at high temperature carry out dopant redistribution, form the channel region 12 of N-type MESFET;
7) silicon nitride layer is removed: adopt dry etching technology all to be removed by silicon nitride;
8) photoetched grid 14, removes the photoresist in grid region;
9) electron beam evaporation titanium/platinum/gold;
10) titanium/platinum/gold on remaining photoresist and photoresist is removed;
11) heat, make titanium/platinum/billon and P type MESFET raceway groove 13 and N-type MESFET raceway groove 12 form Schottky contacts;
12) photoresist is applied, photoetching the photoresist in etching N type MESFET source electrode 10 and drain electrode 11 regions;
13) N-type heavy doping is carried out to this region, in the N-type heavily doped region that N-type MESFET source electrode 10 and drain electrode 11 region are formed, carry out short annealing process;
14) apply photoresist, photoetching also etches P type MESFET source electrode 8 and the photoresist in 9 regions that drain;
15) heavy doping of P type is carried out to this region, in the P type heavily doped region that P type MESFET source electrode 8 and drain electrode 9 region are formed, carry out short annealing process;
16) photoetching source electrode and drain electrode, removes the photoresist of source electrode and drain electrode;
17) vacuum evaporation gold germanium nickel/gold;
18) gold germanium nickel/gold on photoresist and photoresist is removed;
19) alloying forms ohmic contact, forms source electrode and drain electrode;
20) apply photoresist, remove the photoresist of the position, anchor district 4 of power line 1, ground wire 2, lead-in wire 3, pull-down electrode 6 and cantilever beam;
21) evaporate ground floor gold, its thickness is about 0.3 μm;
22) remove the gold on photoresist and photoresist, form the anchor district 4 of power line 1, ground wire 2, lead-in wire 3, pull-down electrode 6 and cantilever beam;
23) deposit one deck
thick silicon nitride;
24) photoetching etch nitride silicon dielectric layer, is retained in the silicon nitride medium layer 7 in pull-down electrode 6;
25) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in GaN substrate 15, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below cantilever beam 5;
26) evaporate titanium/gold/titanium, its thickness is
27) photoetching: remove and will electroplate local photoresist;
28) electrogilding, its thickness is 2 μm;
29) photoresist is removed: remove and do not need to electroplate local photoresist;
30) anti-carve titanium/gold/titanium, corrosion down payment, forms MEMS cantilever beam 5;
31) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under cantilever beam 5, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
Difference of the present invention is:
The present invention effectively can reduce the grid leakage current in ring oscillator, and reduce ring oscillator power consumption operationally to a certain extent, in the present invention, a cantilever beam is left floating above the grid of the MESFET device of looping oscillator, by anchor, district constitutes cantilever beam structure, and the cantilever beam of MESFET is made by Au material.The threshold voltage designs of N-type MESFET be on the occasion of, the threshold voltage designs of P type MESFET is negative value, and the absolute value of the threshold voltage of N-type MESFET and P type MESFET is designed to equal, the actuation voltage of cantilever beam is designed to equal with the absolute value of the threshold voltage of MESFET.Time voltage when between MESFET cantilever beam and pull-down electrode is less than threshold voltage absolute value, cantilever beam can not absorb, thus causes MESFET to end, and the grid leakage current therefore in ring oscillator just greatly reduces; Time voltage when between the cantilever beam and pull-down electrode of MESFET is greater than threshold voltage absolute value, cantilever beam will be adsorbed on grid, and MESFET is with regard to this conducting, and due to the reduction of grid leakage current, the power consumption of this ring oscillator also reduces.
Namely the structure meeting above condition is considered as the ring oscillator of gallium nitrate based low-leakage current cantilever beam of the present invention.
Claims (2)
1. the ring oscillator of a gallium nitrate based low-leakage current cantilever beam, it is characterized in that what this oscillator was made up of three phase inverters, their end to end formation ring-types, whole ring oscillator makes based on semi-insulating type GaN substrate (15), three phase inverters realize interconnection by lead-in wire (3), each phase inverter is made up of cantilever beam N-type MESFET and cantilever beam P type MESFET, the cantilever beam (5) of this N-type MESFET (17) and P type MESFET (16) is suspended on grid (14), the anchor district (4) of cantilever beam is deposited on semi-insulating type GaN substrate (15), a pull-down electrode (6) is had in cantilever beam (5) below, be distributed between grid (14) and anchor district (4), wherein the pull-down electrode (6) of N-type MESFET (17) cantilever beam (5) below is ground connection, and the pull-down electrode (6) of P type MESFET (16) cantilever beam (5) below connects power supply, pull-down electrode (6) is coated with silicon nitride medium layer (7).
2. a preparation method for the ring oscillator of gallium nitrate based low-leakage current cantilever beam as claimed in claim 1, is characterized in that this preparation method is as follows:
1. prepare semi-insulating type GaN substrate;
2. deposit one deck silicon nitride, photoetching etch silicon nitride, remove the silicon nitride of P type MESFET channel region;
3.P type MESFET Channeling implantation: inject boron, anneal in a nitrogen environment; After having annealed, at high temperature carry out dopant redistribution, form the channel region of P type MESFET;
4. remove silicon nitride layer: adopt dry etching technology all to be removed by silicon nitride;
5. deposit one deck silicon nitride, photoetching etch silicon nitride, remove the silicon nitride of N-type MESFET channel region;
6.N type MESFET Channeling implantation: inject phosphorus, anneal in a nitrogen environment; After having annealed, at high temperature carry out dopant redistribution, form the channel region of N-type MESFET;
7. remove silicon nitride layer: adopt dry etching technology all to be removed by silicon nitride;
8. photoetched grid, removes the photoresist in grid region;
9. electron beam evaporation titanium/platinum/gold;
10. remove the titanium/platinum/gold on remaining photoresist and photoresist;
11. heating, make titanium/platinum/billon and P type MESFET raceway groove and N-type MESFET raceway groove form Schottky contacts;
12. coating photoresists, photoetching the photoresist of etching N type MESFET source electrode and drain region;
N-type heavy doping is carried out in 13. pairs of these regions, in the N-type heavily doped region that N-type MESFET source electrode and drain region are formed, carries out short annealing process;
14. coating photoresists, photoetching also etches the photoresist of P type MESFET source electrode and drain region;
The heavy doping of P type is carried out in 15. pairs of these regions, in the P type heavily doped region that P type MESFET source electrode and drain region are formed, carries out short annealing process;
16. photoetching source electrode and drain electrodes, remove the photoresist of source electrode and drain electrode;
17. vacuum evaporation gold germanium nickel/gold;
18. remove the gold germanium nickel/gold on photoresist and photoresist;
19. alloyings form ohmic contact, form source electrode and drain electrode;
20. coating photoresists, remove the photoresist of the anchor zone position of power line, ground wire, lead-in wire, pull-down electrode and cantilever beam;
21. evaporation ground floor gold, its thickness is about 0.3 μm;
22. remove the gold on photoresist and photoresist, form the anchor district of power line, ground wire, lead-in wire, pull-down electrode and cantilever beam;
23. deposit one decks
thick silicon nitride;
24. photoetching etch nitride silicon dielectric layer, be retained in the silicon nitride in pull-down electrode;
25. deposits photoetching polyimide sacrificial layer: in GaN substrate, apply 1.6 μm of thick polyimide sacrificial layer, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below cantilever beam;
26. evaporation titanium/gold/titaniums, its thickness is
27. photoetching: remove and will electroplate local photoresist;
28. electrogildings, its thickness is 2 μm;
29. remove photoresist: remove and do not need to electroplate local photoresist;
30. anti-carve titanium/gold/titanium, and corrosion down payment, forms MEMS cantilever beam;
31. release polyimide sacrificial layer: developer solution soaks, and remove the polyimide sacrificial layer under cantilever beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
Priority Applications (1)
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| CN105141307A (en) * | 2015-07-01 | 2015-12-09 | 东南大学 | Silicon-based ring oscillator with low leakage current cantilever beam movable gates and preparation method |
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| CN1596507A (en) * | 2001-11-30 | 2005-03-16 | 夏普株式会社 | Oscillator circuit, booster circuit, nonvolatile memory device, and semiconductor device |
| CN102751947A (en) * | 2011-04-20 | 2012-10-24 | 精工爱普生株式会社 | Vibration circuit |
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| CN103490725A (en) * | 2013-08-29 | 2014-01-01 | 苏州苏尔达信息科技有限公司 | Voltage controlled ring oscillator |
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| CN1596507A (en) * | 2001-11-30 | 2005-03-16 | 夏普株式会社 | Oscillator circuit, booster circuit, nonvolatile memory device, and semiconductor device |
| CN102751947A (en) * | 2011-04-20 | 2012-10-24 | 精工爱普生株式会社 | Vibration circuit |
| US20120293271A1 (en) * | 2011-05-20 | 2012-11-22 | Nayfeh Osama M | Voltage tunable oscillator using bilayer graphene and a lead zirconate titanate capacitor |
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| CN105141307A (en) * | 2015-07-01 | 2015-12-09 | 东南大学 | Silicon-based ring oscillator with low leakage current cantilever beam movable gates and preparation method |
| CN105141307B (en) * | 2015-07-01 | 2018-02-06 | 东南大学 | Silicon substrate low-leakage current cantilever beam can moving grid ring oscillator and preparation method |
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