CN104935296A - RS trigger of gallium nitride-based low-leakage-current cantilever beam - Google Patents
RS trigger of gallium nitride-based low-leakage-current cantilever beam Download PDFInfo
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- CN104935296A CN104935296A CN201510379289.7A CN201510379289A CN104935296A CN 104935296 A CN104935296 A CN 104935296A CN 201510379289 A CN201510379289 A CN 201510379289A CN 104935296 A CN104935296 A CN 104935296A
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- cantilever beam
- nand gate
- type mesfet
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 229910002601 GaN Inorganic materials 0.000 title abstract 2
- 239000000725 suspension Substances 0.000 claims abstract description 7
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 32
- 229940044658 gallium nitrate Drugs 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000005669 field effect Effects 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000004873 anchoring Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 239000010931 gold Substances 0.000 description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses an RS trigger of a gallium nitride-based low-leakage-current cantilever beam. The RS trigger is manufactured on a semi-insulated GaN substrate (2), and consists of four N-type MESFET (Metal Semiconductor Field Effect Transistor) switches (1) and two resistors R, wherein two of the N-type MESFET switches are connected in series, thereby constructing a first NAND gate 1; the other two N-type MESFET switches (11) are connected in series, thereby constructing a second NAND gate 2; the output end of the first NAND gate is connected with the input end of the second NAND gate through a lead; the output end of the second NAND gate is also connected with the input end of the first NAND gate through a lead, thereby forming a completely symmetrical structure; the RS trigger is provided with two external signal input ends, namely, a first input end R and a second input end S respectively, and two output ends, namely, a first output end Q and a second output Q' respectively; the N-type MESFET switches are provided with suspension cantilever beams (7); one end of each cantilever beam is fixed on an anchoring region (6); and the middle parts and the other ends of the cantilever beams stretch across grids (4).
Description
Technical field
The present invention proposes the rest-set flip-flop of gallium nitrate based low-leakage current cantilever beam, belong to the technical field of microelectromechanical systems.
Background technology
Along with the development of digital integrated circuit, the requirement of people to digital integrated circuit is also more and more higher, people wish that the speed of device can be more and more faster, power consumption can be more and more lower, cost also can be more and more lower, but traditional MOS device can not meet the requirement of people because of its many limitation, and the appearance of GaN metal-semiconductor field effect transistor (MESFET) solves the matter of great urgency of people, this MESFET device is high with electron mobility, carrier drift speed is fast, energy gap is large, capability of resistance to radiation is strong, the plurality of advantages such as operating temperature range is wide are widely used in various digital integrated circuit, wherein utilize this GaN type MESFET switch and the rest-set flip-flop be made just is loved by the people.But the update of digital integrated circuit is very fast, under the trend that nowadays footprint constantly increases, size constantly reduces, it is found that the power consumption of traditional rest-set flip-flop is all a problem all the time, especially along with the integrated level of circuit improves constantly, the problem that this power consumption remains high annoyings people always.
Along with the deep development of MEMS technology, a kind of MESFET switch of the MEMS of having cantilever beam structure effectively can solve the problem of grid leakage current, and the power consumption of whole rest-set flip-flop can be reduced, therefore the present invention devises a kind of rest-set flip-flop with the cantilever beam of very little gate leakage current in semi-insulating type GaN substrate.
Summary of the invention
Technical problem: the object of this invention is to provide a kind of rest-set flip-flop of gallium nitrate based low-leakage current cantilever beam, the grid of tradition MESFET device is formed Schottky contacts by metal and channel region and is formed, because control signal is directly carried on grid, this just inevitably produces leakage current, thus the DC power that result in whole rest-set flip-flop is bigger than normal, and the present invention just very effectively reduces the grid leakage current in rest-set flip-flop, thus the DC power of rest-set flip-flop can be reduced.
Technical scheme: the rest-set flip-flop of gallium nitrate based low-leakage current cantilever beam of the present invention is produced in semi-insulating type GaN substrate, be made up of four N-type MESFET switches and two resistance R, this N-type MESFET switch comprises source electrode, drain electrode, grid and raceway groove composition, wherein two N-type MESFET switch series connection connect to form the first NAND gate, another two N-type MESFET switches series connection connects to form the second NAND gate, wherein the output of the first NAND gate is connected with an input of the second NAND gate by wire, the output of same second NAND gate is also connected with an input of the first NAND gate by wire, form the structure of full symmetric, rest-set flip-flop has two outer signal inputs to be first input end R and the second input S respectively, and two outputs are the first output Q and the second output respectively
n-type MESFET switch has the cantilever beam of suspension, one end of this cantilever beam is fixed in anchor district, mid portion and the other end are across above grid, and have a gap between grid, cantilever beam is made by Au material, below cantilever beam, be also provided with two pull-down electrode, pull-down electrode is ground connection, it is also coated with silicon nitride medium layer, and this structure can reduce gate leakage current greatly, thus reduces the power consumption of device.
The threshold voltage designs of described four N-type MESFET switches is equal, and the actuation voltage of cantilever beam is designed to equal with the threshold voltage of N-type MESFET; When only having the voltage between cantilever beam and pull-down electrode to be greater than threshold voltage, the cantilever beam of suspension just drop-down being labelled on grid can make N raceway groove MESFET conducting, and offset signal is connected on grid by cantilever beam, otherwise N raceway groove MESFET just cut-off.
When R end and S end be all high level, the cantilever beam 7 of the N-type MESFET be connected with these two ends drop-downly can make its conducting, but two input signals to export Q with
not impact, by Q and
the N-type MESFET controlled still is in original state, so flip-flop states remains unchanged; When R end for high level, S end for low level time, with R hold be connected N-type MESFET conducting, hold the N-type MESFET be connected to end with S, therefore
for high level, with
the N-type MESFET conducting that end is connected, so Q output low level, now flip-flop states stabilizes to low level; When R end for low level, S end for high level time, hold the N-type MESFET be connected to end with R, hold the N-type MESFET conducting be connected with S, therefore Q is high level, holds with Q the N-type MESFET conducting be connected, so
output low level, now flip-flop states stabilizes to high level; When R end and S end be all low level time, the N-type MESFET be connected with these two ends ends, therefore Q and
be all high level, at this moment rest-set flip-flop is in neither 1 nondeterministic statement non-zero again, and therefore to make rest-set flip-flop normally work, input signal must observe the constraints of R+S=1, does not namely allow R=S=0.
Beneficial effect: the rest-set flip-flop of gallium nitrate based low-leakage current cantilever beam of the present invention has the cantilever beam structure of suspension, and there is one deck space between grid, therefore can reduce grid leakage current greatly, thus reduce the DC power of whole rest-set flip-flop, improve the stability of system.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the rest-set flip-flop of gallium nitrate based low-leakage current cantilever beam of the present invention,
Fig. 2 is the inside schematic diagram of the rest-set flip-flop of gallium nitrate based low-leakage current cantilever beam of the present invention,
Fig. 3 is the vertical view of the rest-set flip-flop of gallium nitrate based low-leakage current cantilever beam of the present invention,
Fig. 4 be the rest-set flip-flop of the gallium nitrate based low-leakage current cantilever beam of Fig. 3 P-P ' to profile,
Fig. 5 be the rest-set flip-flop of the gallium nitrate based low-leakage current cantilever beam of Fig. 3 A-A ' to profile.
Figure comprises: N-type MESFET switch 1, semi-insulating type GaN substrate 2, lead-in wire 3, grid 4, N-type MESFET raceway groove 5, anchor district 6, cantilever beam 7, pull-down electrode 8, the source electrode 10 of silicon nitride medium layer 9, N-type MESFET, the drain electrode 11 of N-type MESFET, resistance R, 1., the second NAND gate 2. for the first NAND gate.
Embodiment
The rest-set flip-flop of gallium nitrate based low-leakage current cantilever beam of the present invention makes based on semi-insulating type GaN substrate 2, wherein N-type MESFET switch 1 is by source electrode 10, drain electrode 11, anchor district 6, cantilever beam 7, pull-down electrode 8 and silicon nitride medium layer 9 formed, it has unique MEMS cantilever beam structure, this cantilever beam 7 is across above grid 4, this cantilever beam is made by Au material, a pull-down electrode 8 is had below cantilever beam, this pull-down electrode 8 is ground connection, pull-down electrode 8 is coated with silicon nitride medium layer 9, control signal is attached on this cantilever beam 7, and be not be directly carried on grid.
The rest-set flip-flop of gallium nitrate based low-leakage current cantilever beam of the present invention is mainly made up of two NAND gate, and wherein the first NAND gate output Q 1. and a second NAND gate input is 2. connected, and the second NAND gate output 2.
be connected with the first NAND gate input 1., the first NAND gate another input is 1. R end (clear terminal), and the second NAND gate another input is 2. S end (set end).These two NAND gate are all be connected in series formed by two identical N-type MESFET switches and a pull-up resistor R, and get between N-type MESFET and resistance a bit as output Q and
so whole rest-set flip-flop has altogether four N-type MESFET switches.
Whole rest-set flip-flop makes based on semi-insulating type GaN substrate, wherein the most key is exactly the structure of four N-type MESFET switches, they are by source electrode, drain electrode, grid and raceway groove composition, the ohmic contact regions that the source electrode of MESFET and drain electrode are formed by gold and N-type heavily doped region is formed, grid is that the Schottky contact region formed by gold and raceway groove is formed, this N-type MESFET of what is more important has unique MEMS cantilever beam structure, by anchor district across on grid, and there is one deck space between grid, control signal is attached on this cantilever beam, and be not be directly carried on grid as traditional MESFET device, this cantilever beam is made by Au material, a pull-down electrode is had below cantilever beam, be distributed between anchor district and grid, this pull-down electrode is ground connection, pull-down electrode is coated with silicon nitride medium layer.
From single NAND gate, when being all loaded with high level ' 1 ' on the cantilever beam of two N-type MESFET, due to pull-down electrode ground connection, thus the suspension cantilever beam of N-type MESFET is adsorbed by pull-down electrode and is labelled on the grid above N-type raceway groove, now two equal conductings of N-type MESFET, so whole circuit forms path, the dividing potential drop effect due to resistance R makes output be low level ' 0 '; When loading high level ' 1 ' and the cantilever beam of another N-type MESFET loads low level ' 0 ' on the cantilever beam of one of them N-type MESFET, make a N-type MESFET conducting, another N-type MESFET ends, and whole circuit does not form path, so output is high level ' 1 '; When being all loaded with low level ' 0 ' on the cantilever beam of two N-type MESFET, the suspension cantilever beam of two N-type MESFET all can not be drop-down, two N-type MESFET are made to be all cut-off states, whole circuit does not form path, so output is high level ' 1 ', this is the operation principle of single NAND gate.Again from whole rest-set flip-flop, when R end and S end be all high level ' 1 ' time, two input signals to export Q with
not impact, so flip-flop states remains unchanged; When R end for high level ' 1 ', S hold for low level ' 0 ' time, output Q be low level ' 0 ',
for high level ' 1 ', now flip-flop states is low level ' 0 '; When R end for low level ' 0 ', S hold for high level ' 1 ' time, output Q be high level ' 1 ',
for low level ' 0 ', now flip-flop states is high level ' 1 '; When R end and S end be all low level ' 0 ' time, obtain Q hold with
it is all high level ' 1 ' that end exports, and at this moment trigger is in neither 1 nondeterministic statement non-zero again, and therefore to make trigger normally work, input signal must observe the constraints of R+S=1, does not namely allow R=S=0.
The preparation method of the rest-set flip-flop of gallium nitrate based low-leakage current cantilever beam of the present invention is:
1) semi-insulating type GaN substrate 2 is prepared;
2) deposit one deck silicon nitride, photoetching etch silicon nitride, remove the silicon nitride of N-type MESFET channel region 5;
3) N-type MESFET Channeling implantation: inject phosphorus, anneal in a nitrogen environment; After having annealed, at high temperature carry out dopant redistribution, form the channel region 5 of N-type MESFET;
4) silicon nitride layer is removed: adopt dry etching technology all to be removed by silicon nitride;
5) photoetched grid 4, removes the photoresist in grid region;
6) electron beam evaporation titanium/platinum/gold;
7) titanium/platinum/gold on remaining photoresist and photoresist is removed;
8) heat, make titanium/platinum/billon and N-type MESFET raceway groove 5 form Schottky contacts;
9) photoresist is applied, photoetching the photoresist in etching N type MESFET source electrode 10 and drain electrode 11 regions;
10) N-type heavy doping is carried out to this region, in the N-type heavily doped region that N-type MESFET source electrode 10 and drain electrode 11 region are formed, carry out short annealing process;
11) photoetching source electrode 10 and drain electrode 11, remove the photoresist of source electrode 10 and drain electrode 11;
12) vacuum evaporation gold germanium nickel/gold;
13) gold germanium nickel/gold on photoresist and photoresist is removed;
14) alloying forms ohmic contact, forms source electrode 10 and drain electrode 11;
15) apply photoresist, remove the photoresist of the position, anchor district 6 of lead-in wire 3, pull-down electrode 8 and cantilever beam;
16) evaporate ground floor gold, its thickness is about 0.3 μm;
17) remove the gold on photoresist and photoresist, form the anchor district 6 of lead-in wire 3, pull-down electrode 8 and cantilever beam;
18) deposit one deck
thick silicon nitride;
19) photoetching etch nitride silicon dielectric layer, is retained in the silicon nitride medium layer 9 in pull-down electrode;
20) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in GaN substrate 2, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below cantilever beam 7;
21) evaporate titanium/gold/titanium, its thickness is 500/1500/
22) photoetching: remove and will electroplate local photoresist;
23) electrogilding, its thickness is 2 μm;
24) photoresist is removed: remove and do not need to electroplate local photoresist;
25) anti-carve titanium/gold/titanium, corrosion down payment, forms MEMS cantilever beam 7;
26) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under cantilever beam 7, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
Difference of the present invention is:
Four switches forming rest-set flip-flop are made up of the N-type MESFET with cantilever beam structure, this cantilever beam passes through anchor district across above grid, and there is one deck space between grid, two pull-down electrode are provided with below cantilever beam, this pull-down electrode is ground connection, the threshold voltage designs of two N-type MESFET is equal, and the actuation voltage of cantilever beam is designed to equal with the threshold voltage of N-type MESFET.When voltage between cantilever beam and pull-down electrode is greater than threshold voltage, cantilever beam is drop-down to be labelled on grid, thus makes N-type MESFET conducting, otherwise N-type MESFET ends, due to the existence of the cantilever beam of N-type MESFET, grid leakage current is reduced greatly, and DC power also reduces further.
Namely the structure meeting above condition is considered as the rest-set flip-flop of gallium nitrate based low-leakage current cantilever beam of the present invention.
In Fig. 1 the symbol of rest-set flip-flop and truth table as follows:
Claims (2)
1. the rest-set flip-flop of a gallium nitrate based low-leakage current cantilever beam, it is characterized in that this rest-set flip-flop is produced on semi-insulating type GaN substrate (2), be made up of four N-type MESFET switches (1) and two resistance R, this N-type MESFET switch (1) comprises source electrode, drain electrode, grid and raceway groove composition, wherein two N-type MESFET switches (1) are connected in series composition first NAND gate (1.), another two N-type MESFET switches (11) are connected in series composition second NAND gate (2.), wherein the output of the first NAND gate (1.) is connected with an input of the second NAND gate (2.) by wire, the output of same second NAND gate (2.) is also connected with an input of the first NAND gate (1.) by wire, form the structure of full symmetric, rest-set flip-flop has two outer signal inputs to be first input end R and the second input S respectively, and two outputs are the first output Q and the second output respectively
n-type MESFET switch (1) has the cantilever beam (7) of suspension, one end of this cantilever beam (7) is fixed in anchor district (6), mid portion and the other end are across above grid (4), and grid has a gap between (4), cantilever beam (7) is made by Au material, two pull-down electrode (8) are also provided with in cantilever beam (7) below, pull-down electrode (8) is ground connection, it is also coated with silicon nitride medium layer (9), this structure can reduce gate leakage current greatly, thus reduces the power consumption of device.
2. the rest-set flip-flop of gallium nitrate based low-leakage current cantilever beam according to claim 1, the threshold voltage designs that it is characterized in that described four N-type MESFET switches (1) is equal, and the actuation voltage of cantilever beam is designed to equal with the threshold voltage of N-type MESFET; When only having the voltage between cantilever beam (7) and pull-down electrode to be greater than threshold voltage, the cantilever beam (7) suspended just drop-down being labelled on grid (4) can make N raceway groove MESFET conducting, offset signal is connected on grid (4) by cantilever beam (7), otherwise N raceway groove MESFET just cut-off.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510379289.7A CN104935296B (en) | 2015-07-01 | 2015-07-01 | The rest-set flip-flop of gallium nitride base low-leakage current cantilever beam |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510379289.7A CN104935296B (en) | 2015-07-01 | 2015-07-01 | The rest-set flip-flop of gallium nitride base low-leakage current cantilever beam |
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| CN104935296B CN104935296B (en) | 2017-06-30 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6229405B1 (en) * | 1997-11-14 | 2001-05-08 | Seiko Epson Corporation | Low-voltage oscillation amplifying circuit |
| US20030132778A1 (en) * | 2002-01-15 | 2003-07-17 | Matsushita Electric Industrial Co., Ltd. | Level shift circuit |
| CN1744437B (en) * | 2005-09-30 | 2010-04-21 | 清华大学 | High-performance low power consumption master-slave D trigger |
| CN102420586A (en) * | 2011-12-29 | 2012-04-18 | 北京大学 | Clock gate control circuit and trigger |
-
2015
- 2015-07-01 CN CN201510379289.7A patent/CN104935296B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6229405B1 (en) * | 1997-11-14 | 2001-05-08 | Seiko Epson Corporation | Low-voltage oscillation amplifying circuit |
| US20030132778A1 (en) * | 2002-01-15 | 2003-07-17 | Matsushita Electric Industrial Co., Ltd. | Level shift circuit |
| CN1744437B (en) * | 2005-09-30 | 2010-04-21 | 清华大学 | High-performance low power consumption master-slave D trigger |
| CN102420586A (en) * | 2011-12-29 | 2012-04-18 | 北京大学 | Clock gate control circuit and trigger |
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| CN104935296B (en) | 2017-06-30 |
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