CN105048999A - GaN-based low-leakage current dual-cantilever beam switch NOR gate RS trigger - Google Patents
GaN-based low-leakage current dual-cantilever beam switch NOR gate RS trigger Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 16
- 239000010936 titanium Substances 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- 238000013461 design Methods 0.000 claims description 8
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229940044658 gallium nitrate Drugs 0.000 claims description 4
- 238000007667 floating Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 229910002601 GaN Inorganic materials 0.000 description 12
- 238000001259 photo etching Methods 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a GaN-based low-leakage current dual-cantilever beam switch NOR gate RS trigger. An MESFET NOR gate with dual cantilever beam switches replace a traditional NOR gate. The two cantilever beam switches are symmetrical in relative to a source-drain direction of the MESFET. Schottky contact is formed between the gate of the MESFET and a substrate. A depletion layer is formed in the substrate below the gate. The pull-down voltage of the cantilever beam switch is designed to be the same as the threshold voltage of the MESFET. When voltage loaded between the cantilever beam switch and the pull-down electrode is larger than the threshold voltage of the MESFET, the cantilever beam is pulled down to be closely attached to the gate to enable the MESFET to be conducted. When the loaded voltage is smaller than the threshold voltage of the N-type MESFET, the cantilever beam switch can not be pulled down, and the MESFET is cut off. When the RS trigger works and the N-type MESFET is cutoff, the cantilever beam switch is in a suspending state, the gate leakage current is reduced, and power consumption of the RS trigger is reduced.
Description
Technical field
The present invention proposes the rest-set flip-flop of GaN base low-leakage current double cantilever beam switch MESFET NOR gate, belong to the technical field of microelectromechanical systems.
Background technology
Along with the development of wireless communication technology, the chip of radio frequency integrated circuit also develops rapidly, and integrated scale constantly expands, and operating frequency improves constantly, and traditional silica-base material can not meet the demands.MESFET based on gallium nitride substrate is suggested application under this background, because the characteristic that gallium nitride material is good makes the transistor manufactured by it have very high electron mobility, very strong capability of resistance to radiation, larger operating temperature range.Because in chip, the quantity of transistor gets more and more, the thing followed is exactly the power problems of integrated circuit.Along with the development of integrated circuit, the scale of chip becomes very large, and people more and more pay attention to for the power consumption of chip.Too high power consumption can propose higher requirement to the heat sink material of chip, and the performance of chip also can be made to be affected.So the design for the low-power consumption of device seems more and more important in the design of integrated circuit.
Rest-set flip-flop circuit is as the important component part of digital circuit, it is the various basic comprising parts with the flip-flop circuit of sophisticated functions, there is huge application, the rest-set flip-flop of conventional MESFET composition, along with the lifting of integrated level, power consumption becomes more and more serious, the excessive chip overheating problem brought of power consumption can have a strong impact on the performance of integrated circuit, the MESFET with movable cantilever switch structure in this paper effectively can reduce grid leakage current, and then reduces the power consumption of rest-set flip-flop circuit.
Summary of the invention
Technical problem: the rest-set flip-flop that the object of this invention is to provide a kind of GaN base low-leakage current double cantilever beam switch MESFET NOR gate.The rest-set flip-flop circuit of traditional two NOR gate be made up of conventional MESFET is changed to the rest-set flip-flop that two have the MESFET NOR gate of double cantilever beam construction of switch, when this rest-set flip-flop is in running order, effectively can reduce the grid leakage current of transistor, thus reduce the power consumption of this rest-set flip-flop.
Technical scheme: the rest-set flip-flop of gallium nitrate based low-leakage current double cantilever beam switch NOR gate of the present invention is by having double cantilever beam switch first N-type MESFET and the second N-type MESFET, resistance and power supply composition, this double cantilever beam switch first N-type MESFET and the second N-type MESFET is produced on semi-insulating GaN substrate, the source electrode of the first N-type MESFET and the second N-type MESFET and drain electrode form ohmic contact by metal and heavy doping N district and form, grid forms Schottky contacts by titanium/platinum/billon and N-type active layer and forms, the cantilever switch of the symmetric design that two are made with titanium/gold/titanium is left floating above grid, do not interfere with each other when leaving gap between the suspension end of two cantilever switch to ensure that two cantilever switch are drop-down, the position of two cantilever switch is symmetrical about this MESFET source-drain direction, the anchor district of cantilever switch is produced on semi-insulating GaN substrate, pull-down electrode is provided with between cantilever switch and substrate, pull-down electrode is covered by silicon nitride material, pull-down electrode and source ground, drain electrode is connected with power supply VCC by resistance, source electrode makes with the lead-in wire gold that drain electrode is connected, in the first N-type MESFET and the second N-type MESFET of this rest-set flip-flop, a cantilever switch is respectively had to export between the drain electrode and resistance of double cantilever beam switch second N-type MESFET respectively as input S and R of this rest-set flip-flop, output Q, output
export between the drain electrode and resistance of the first N-type MESFET, the other cantilever switch of first N-type MESFET is connected with the drain electrode of the second N-type MESFET by lead-in wire, another cantilever switch of same second N-type MESFET is connected with the drain electrode of the first N-type MESFET by lead-in wire, form symmetrical structure, in order to ensure to show that output is low level by electric resistance partial pressure as double cantilever beam switch first N-type MESFET and the second N-type MESFET conducting, the resistance of resistance is much larger than the impedance of the first N-type MESFET and the second N-type MESFET conducting.
Described cantilever switch be rely on anchor district be supported and suspended on above grid, define Schottky contacts between grid and substrate, two cantilever switch of this first N-type MESFET and the second N-type MESFET actuation voltage design equal with the threshold voltage of this N-type MESFET, when only having voltage added on the cantilever switch of this N-type MESFET to be greater than the threshold voltage of this N-type MESFET, its cantilever switch could be drop-down and contact grid thus make double cantilever beam switch MESFET conducting, when institute's making alive is less than the threshold voltage of double cantilever beam switch MESFET, cantilever switch just can not be drop-down, double cantilever beam switch MESFET turns off, when this rest-set flip-flop works, when double cantilever beam switch MESFET is in shutoff, its cantilever switch is just in suspended state, reduce grid leakage current, thus reduce the power consumption of circuit.
When this rest-set flip-flop is in operating conditions, definition Q=1,
for 1 state of trigger, definition Q=0,
for 0 state of trigger, S is called set end, and R is called reset terminal.As S=1, R=0, because input S connects high level, the cantilever switch that input S is corresponding drop-down and make double cantilever beam switch first N-type MESFET conducting thus export
for low level, namely
q=1, after S=1 blackout, the high level held owing to there being Q takes back another cantilever switch of the double cantilever beam switch first N-type MESFET of this rest-set flip-flop and makes it drop-down, thus makes output
maintain low level, thus 1 state of circuit is kept; As S=0, R=1, because input R connects high level, the cantilever switch that input R is corresponding drop-down and make double cantilever beam switch second N-type MESFET conducting thus export Q be low level, i.e. Q=0,
after R=1 blackout, 0 state of circuit remains unchanged; As S=R=0, it is constant that circuit maintains original state; As S=R=1,
this state does not allow to occur, is the constraints of rest-set flip-flop.N-type MESFET in this trigger along with input signal its state of change also conducting and turn off between change, when N-type MESFET is in OFF state, its cantilever switch is in suspended state, reduce grid leakage current, thus reduce the power consumption of this rest-set flip-flop.Due to the next state Q of rest-set flip-flop
n+1not only relevant with input state, and the state Q original with rest-set flip-flop (also referred to as initial state) is relevant, and the truth table of the rest-set flip-flop obtained is as follows:
| S | R | Q | Q n+1 |
| 0 | 0 | 0 | 0 |
| 0 | 0 | 1 | 1 |
| 1 | 0 | 0 | 1 |
| 1 | 0 | 1 | 1 |
| 0 | 1 | 0 | 0 |
| 0 | 1 | 1 | 0 |
Beneficial effect: the double cantilever beam switch MESFET in the rest-set flip-flop of GaN base low-leakage current double cantilever beam switch MESFET NOR gate of the present invention two cantilever switch drop-down when contacting with N-type MESFET grid, N-type MESFET conducting.When between cantilever switch and pull-down electrode, institute's making alive is less than the threshold voltage of MESFET, cantilever switch can not be drop-down, and N-type MESFET turns off, and now cantilever switch is in suspended state, reduces grid leakage current thus reduce the power consumption of this rest-set flip-flop.
Accompanying drawing explanation
Fig. 1 is the vertical view of the rest-set flip-flop of GaN base low-leakage current double cantilever beam switch MESFET NOR gate of the present invention,
Fig. 2 be the rest-set flip-flop of Fig. 1 GaN base low-leakage current double cantilever beam switch MESFET NOR gate P-P ' to profile,
Fig. 3 be the rest-set flip-flop of Fig. 1 GaN base low-leakage current double cantilever beam switch MESFET NOR gate A-A ' to profile.
Figure comprises: the first N-type MESFET1, second switch N-type MESFET2, semi-insulating GaN substrate 3, lead-in wire 4, grid 5, cantilever switch 6, anchor district 7, pull-down electrode plate 8, silicon nitride layer 9, source electrode 10, N-type active layer 11, drain electrode 12, resistance 13.
Embodiment
The rest-set flip-flop of GaN base low-leakage current double cantilever beam switch MESFET NOR gate of the present invention is by two i.e. the first N-type MESFET1 of double cantilever beam switch N-type MESFET, and second switch N-type MESFET2, resistance 13 form.The source electrode 10 of this MESFET and drain electrode 12 form ohmic contact by metal and heavy doping N district and form, grid 5 forms Schottky contacts by titanium/platinum/billon and N-type active layer 12 and forms, the cantilever switch 6 of the symmetric design that two are made with titanium/gold/titanium is left floating above the grid 5 of cantilever switch N-type MESFET, the suspension end of two cantilever switch 6 does not interfere with each other when leaving certain gap to ensure that two cantilever switch 6 are drop-down, and the position of two cantilever switch 6 is symmetrical about this N-type MESFET source-drain direction.The anchor district 7 of cantilever switch 6 is produced on semi-insulating GaN substrate 3, and between cantilever switch 6 and substrate, there is pull-down electrode 8, pull-down electrode 8 is covered by silicon nitride material 9, pull-down electrode 8 ground connection of cantilever switch N-type MESFET.A cantilever switch is respectively had as input S and R of this rest-set flip-flop at the first N-type MESFET1 of the double cantilever beam switch of this rest-set flip-flop and the second N-type MESFET2, output Q exports between the drain electrode and resistance of double cantilever beam switch first N-type MESFET1, output
export between the drain electrode and resistance of double cantilever beam switch first N-type MESFET1, source electrode all ground connection of the first N-type MESFET1 and the second N-type MESFET2, the other cantilever switch of first N-type MESFET1 is connected with the drain electrode of double cantilever beam switch second N-type MESFET2 by lead-in wire, another cantilever switch of same double cantilever beam switch second N-type MESFET2 is connected with the drain electrode of double cantilever beam switch first N-type MESFET1 by lead-in wire, form symmetrical structure, in order to ensure to show that output is low level by electric resistance partial pressure when this MESFET conducting, the resistance of resistance 13 is much larger than the impedance of this MESFET conducting.
When this rest-set flip-flop is in operating conditions, definition Q=1,
for 1 state of trigger, definition Q=0,
for 0 state of trigger, S is called set end, and R is called reset terminal.As S=1, R=0, because input S connects high level, the cantilever switch that input S is corresponding drop-down and make double cantilever beam switch first N-type MESFET1 conducting thus export
for low level, namely
q=1, after S=1 blackout, the high level held owing to there being Q takes back another cantilever switch of this double cantilever beam switch first N-type MESFET1 and makes it drop-down, thus makes output
for low level, thus 1 state of circuit is kept; As S=0, R=1, because input R connects high level, the cantilever switch that input R is corresponding drop-down and make double cantilever beam switch second N-type MESFET2 conducting thus export Q be low level, i.e. Q=0,
after R=1 blackout, 0 state of circuit remains unchanged; As S=R=0, it is constant that circuit maintains original state; As S=R=1,
this state does not allow to occur, is the constraints of rest-set flip-flop.N-type MESFET in this trigger along with input signal its state of change also conducting and turn off between change, when N-type MESFET is in OFF state, its cantilever switch is in suspended state, reduce grid leakage current, thus reduce the power consumption of this rest-set flip-flop.
The preparation method of the rest-set flip-flop of GaN base low-leakage current double cantilever beam switch MESFET NOR gate comprises following step:
1) semi-insulating GaN substrate is prepared;
2) deposit silicon nitride, grows one deck silicon nitride by plasma-enhanced chemical vapour deposition technique (PECVD), then photoetching and etch silicon nitride, removes the silicon nitride of N-type MESFET active area;
3) N-type MESFET active area ion implantation: after injecting phosphorus, anneal in a nitrogen environment; After having annealed, at high temperature carry out N
+dopant redistribution, forms the N-type active layer of N-type MESFET active area;
4) silicon nitride layer is removed: adopt dry etching technology all to be removed by silicon nitride;
5) photoetching switch region, removes the photoresist of switch region;
6) electron beam evaporation titanium/platinum/gold;
7) titanium/platinum/gold on photoresist and photoresist is removed;
8) heat, make titanium/platinum/billon and N-type GaN active layer form Schottky contacts;
9) photoresist is applied, photoetching the photoresist of etching N type MESFET source electrode and drain region;
10) inject heavily doped N-type impurity, in the N-type heavily doped region that N-type MESFET source electrode and drain region are formed, after injection, carry out short annealing process;
11) photoetching source electrode and drain electrode, removes the photoresist of lead-in wire, source electrode and drain electrode;
12) vacuum evaporation gold germanium nickel/gold;
13) gold germanium nickel/gold on photoresist and photoresist is removed;
14) alloying forms ohmic contact, forms lead-in wire, source electrode and drain electrode;
15) apply photoresist, remove the photoresist of the anchor zone position of input lead, battery lead plate and clamped beam;
16) evaporate ground floor gold, its thickness is about 0.3 μm;
17) remove the gold on photoresist and photoresist, begin to take shape the anchor district of input lead, battery lead plate and clamped beam;
18) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
thick silicon nitride medium layer;
19) photoetching etch nitride silicon dielectric layer, is retained in the silicon nitride on battery lead plate;
20) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam;
21) evaporate titanium/gold/titanium, its thickness is 500/1500/
the down payment of evaporation for electroplating;
22) photoetching: remove and will electroplate local photoresist;
23) electrogilding, its thickness is 2 μm;
24) photoresist is removed: remove and do not need to electroplate local photoresist;
25) anti-carve titanium/gold/titanium, corrosion down payment, forms clamped beam;
26) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
Difference with the prior art of the present invention is:
Two cantilever switch of the double cantilever beam switch MESFET that the rest-set flip-flop in the present invention uses are suspended on its grid, Schottky contacts is defined between the grid of N-type MESFET and substrate, depletion layer is formed in substrate square under the gate, the actuation voltage of the cantilever switch of this N-type MESFET designs equal with the threshold voltage of MESFET, when being carried in the voltage between cantilever switch and pull-down electrode and being greater than the threshold voltage of MESFET, cantilever switch is drop-down to be close to grid, N-type MESFET conducting.When between cantilever switch and pull-down electrode, institute's making alive is less than the threshold voltage of MESFET, cantilever switch can not be drop-down, and its MESFET turns off, and now cantilever switch is in suspended state, reduces grid leakage current thus reduce the power consumption of this rest-set flip-flop.
Namely the structure meeting above condition is considered as the rest-set flip-flop of GaN base low-leakage current double cantilever beam switch MESFET NOR gate of the present invention.
Claims (2)
1. the rest-set flip-flop of a gallium nitrate based low-leakage current double cantilever beam switch NOR gate, it is characterized in that this rest-set flip-flop is by having double cantilever beam switch first N-type MESFET (1) and the second N-type MESFET (2), resistance (13) and power supply composition, this double cantilever beam switch first N-type MESFET (1) and the second N-type MESFET (2) are produced on semi-insulating GaN substrate (3), the source electrode (10) of the first N-type MESFET (1) and the second N-type MESFET (2) and drain electrode (12) form ohmic contact by metal and heavy doping N district and form, grid (5) forms Schottky contacts by titanium/platinum/billon and N-type active layer (11) and forms, the cantilever switch (6) of the symmetric design that two are made with titanium/gold/titanium is left floating in grid (5) top, do not interfere with each other when leaving gap between the suspension end of two cantilever switch (6) to ensure that two cantilever switch (6) are drop-down, the position of two cantilever switch (6) is symmetrical about this MESFET source-drain direction, the anchor district (7) of cantilever switch (6) is produced on semi-insulating GaN substrate (3), pull-down electrode (8) is provided with between cantilever switch (6) and substrate, pull-down electrode (8) is covered by silicon nitride material (9), pull-down electrode (8) and source electrode (10) ground connection, drain electrode (12) is connected with power supply VCC by resistance (2), source electrode (10) makes of gold with the lead-in wire (4) that drain electrode (12) is connected, a cantilever switch (6) is respectively had respectively as input S and R of this rest-set flip-flop in the first N-type MESFET (1) and the second N-type MESFET (2) of this rest-set flip-flop, output Q exports between the drain electrode (12) and resistance of double cantilever beam switch second N-type MESFET (2), output
export between the drain electrode (12) and resistance of the first N-type MESFET (1), the other cantilever switch of first N-type MESFET (1) is connected with the drain electrode of the second N-type MESFET (2) by lead-in wire, another cantilever switch of same second N-type MESFET (2) is connected with the drain electrode of the first N-type MESFET (1) by lead-in wire, form symmetrical structure, in order to ensure to show that output is low level by electric resistance partial pressure as double cantilever beam switch first N-type MESFET (1) and the second N-type MESFET (2) conducting, the resistance of resistance (13) is much larger than the impedance of the first N-type MESFET (1) and the second N-type MESFET (2) conducting.
2. the rest-set flip-flop of gallium nitrate based low-leakage current double cantilever beam switch NOR gate according to claim 1, it is characterized in that described cantilever switch (6) is being supported and suspended on above grid (5) of dependence anchor district (7), between grid (5) and substrate (3), define Schottky contacts, two cantilever switch (6) of this first N-type MESFET (1) and the second N-type MESFET (2) actuation voltage design equal with the threshold voltage of this N-type MESFET, only have when the upper added voltage of cantilever switch (6) of this N-type MESFET is greater than the threshold voltage of this N-type MESFET, its cantilever switch (6) could be drop-down and contact grid (5) thus make double cantilever beam switch MESFET conducting, when institute's making alive is less than the threshold voltage of double cantilever beam switch MESFET, cantilever switch (6) just can not be drop-down, double cantilever beam switch MESFET turns off, when this rest-set flip-flop works, when double cantilever beam switch MESFET is in shutoff, its cantilever switch (6) is just in suspended state, reduce grid leakage current, thus reduce the power consumption of circuit.
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| CN201510379020.9A CN105048999B (en) | 2015-07-01 | 2015-07-01 | Gallium nitride base low-leakage current double cantilever beam switchs the rest-set flip-flop of nor gate |
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| CN103199823A (en) * | 2013-04-08 | 2013-07-10 | 宁波大学 | High-performance low leakage power consumption master-slave type D flip-flop |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020000834A1 (en) * | 1999-02-22 | 2002-01-03 | Tsukasa Ooishi | Semiconductor logic circuit device of low current consumption |
| CN101257289B (en) * | 2008-03-28 | 2011-04-20 | 华中科技大学 | Low-power consumption double-capacitance spread type CMOS oscillator |
| CN101777907A (en) * | 2009-12-31 | 2010-07-14 | 宁波大学 | Low-power dissipation RS latch unit and low-power dissipation master-slave D flip-flop |
| CN103199823A (en) * | 2013-04-08 | 2013-07-10 | 宁波大学 | High-performance low leakage power consumption master-slave type D flip-flop |
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