CN104935261B - Gallium nitride base low-leakage current cantilever switch field effect transistor mixer - Google Patents
Gallium nitride base low-leakage current cantilever switch field effect transistor mixer Download PDFInfo
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- CN104935261B CN104935261B CN201510378148.3A CN201510378148A CN104935261B CN 104935261 B CN104935261 B CN 104935261B CN 201510378148 A CN201510378148 A CN 201510378148A CN 104935261 B CN104935261 B CN 104935261B
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 32
- 230000005669 field effect Effects 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 27
- 230000010355 oscillation Effects 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000007667 floating Methods 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- PMAYAKHWRDUMCW-UHFFFAOYSA-N [Ti].[Ti].[Au] Chemical compound [Ti].[Ti].[Au] PMAYAKHWRDUMCW-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
It is an object of the invention to provide a kind of gallium nitride base low-leakage current cantilever switch field effect transistor mixer,The MESFET with three with MEMS cantilever switch structures replaces traditional MESFET,Reduce the grid leakage current of transistor in frequency mixer,Reduce the power consumption of circuit,The frequency mixer small volume is easily integrated,Using the gallium nitride material with high electron mobility,Very high switching frequency can be achieved,Another innovation of the present invention is second of working method of the frequency mixer,If DC voltage V and the state for being on the 3rd cantilever beam grid N-type MESFET (4) are only loaded on the grid of the 3rd cantilever beam grid N-type MESFET (4) below differential pair,3rd cantilever beam grid N-type MESFET (4) is considered a constant-current source,Now the frequency mixer can also use as difference amplifier,It is such to be designed to make the present invention realize two kinds of different functions using same amount of transistor.
Description
Technical field
The present invention proposes gallium nitride base low-leakage current cantilever switch MESFET frequency mixers, belongs to microelectromechanical systems
Technical field.
Background technology
With the development of wireless communication technology, the global tide that mobile terminal device quickly updates that attacked is various advanced
Technology successively invented and be applied in the middle of the manufacture of mobile terminal device.At the same time it is indispensable as this kind equipment
Important component, the chip of RF IC also develops rapidly, and collection constantly expands on a large scale, and working frequency constantly carries
Height, traditional silica-base material can not meet to require.MESFET based on gallium nitride substrate is exactly to be carried under this background
Go out application, because the good characteristic of gallium nitride material causes there is very high electron mobility by the transistor that it is manufactured, very by force
Capability of resistance to radiation, larger operating temperature range.Because the quantity of transistor in chip is more and more, the thing followed is exactly
The power problemses of integrated circuit, and too high power consumption can cause chip overheating, the working characteristics of transistor can be by the shadow of temperature
Ring and change, so the chip temperature of overheat can not only make chip service life reduction, and the stability of chip can be influenceed.
Analogue mixer circuit is to realize the Nonlinear Electron Devices that two analog quantitys are multiplied, and it is used as base using difference channel
Plinth, circuit performance are well easy to integrate, and Analogue mixer is the important component of RF IC, natural to reducing its work(
The research of consumption just seems very significant, and the sustainable development of MEMS technology makes manufacture have the crystal of movable cantilever switch structure
Pipe becomes a reality, the transistor with movable cantilever switch structure at work with less grid leakage current, so as to
To reduce the power consumption of mixer.
The content of the invention
Technical problem：It is an object of the invention to provide a kind of gallium nitride base low-leakage current cantilever switch field-effect transistor
Frequency mixer, the MESFET with three with MEMS cantilever switch structures replace traditional MESFET, reduce crystal in frequency mixer
The grid leakage current of pipe, reduce the power consumption of circuit.Another innovation of the present invention is the cantilever switch below differential pair
MESFET, only add DC voltage on its gate, and turn on the MESFET, now the MESFET is considered one
Constant-current source, now the frequency mixer can also be used as difference amplifier, it is such to be designed to make the present invention using same number
The transistor of amount realizes two kinds of different functions.
Technical scheme：The gallium nitride base low-leakage current cantilever switch field effect transistor mixer of the present invention is produced on P
On type gallium nitride substrate, the MESFET by three with cantilever switch is the first cantilever beam grid N-type MESFET, the second cantilever beam
Grid N-type MESFET, the 3rd cantilever beam grid N-type MESFET are formed, wherein also being made on the 3rd cantilever beam grid N-type MESFET grid
One layer of silicon nitride, remaining structure is identical with the first cantilever beam grid N-type MESFET, the second cantilever beam grid N-type MESFET, and first
Cantilever beam grid N-type MESFET, the second cantilever beam grid N-type MESFET form differential pair, and its source electrode links together, and jointly with the
Three cantilever beam grid N-type MESFET drain electrode connects, the 3rd cantilever beam grid N-type MESFET source ground, the first cantilever beam grid N-type
MESFET, the second cantilever beam grid N-type MESFET drain electrode connect with resistance respectively, and resistance uses as load, two load resistances
It is connected jointly with supply voltage, local oscillation signal υ LO are in differential pair the first cantilever beam grid N-type MESFET, the second cantilever beam grid N
Inputted between type MESFET cantilever switch, radiofrequency signal υ RF are then loaded into the 3rd cantilever beam grid N-type MESFET cantilever
On beam switch, output signal passes through the signal υ IF required for an intermediate-frequency filter frequency-selecting output；MESFET is by grid, source electrode
Formed with drain electrode, wherein source electrode and drain electrode is formed Ohmic contact and formed by metal and heavy doping N areas, and grid is by metal and channel region
Form Schottky contacts to form, lead is made by Al, MEMS cantilever switch is left floating above MESFET grids, the cantilever beam
Switch is made up of titanium/gold/titanium, and anchor area is produced on p-type gallium nitride substrate, and whole N-type MESFET is produced in N traps, active area
Including source electrode and drain electrode, pull-down electrode between cantilever switch and substrate be present, pull-down electrode is covered by silicon nitride material.
In the first cantilever beam grid N-type MESFET, the second cantilever beam grid N-type MESFET, the 3rd cantilever beam grid N-type MESFET
In, cantilever switch is to be supported and suspended on by anchor area on MESFET grid, the first cantilever beam grid N-type MESFET, the
The actuation voltage of two cantilever beam grid N-type MESFET cantilever switch designs equal with its threshold voltage, only works as cantilever beam
When added voltage is more than its threshold voltage between switch and pull-down electrode, it just can pull down cantilever switch and contact
MESFET grid, the first cantilever beam grid N-type MESFET, the second cantilever beam grid N-type MESFET can be turned on, otherwise the cantilever
Beam switch is just constantly in suspended state, and the first cantilever beam grid N-type MESFET, the second cantilever beam grid N-type MESFET are also at pass
Disconnected state, the presence of cantilever switch cause grid leakage current to greatly reduce, so as to reduce the power consumption of the mixer；
For the 3rd cantilever beam grid N-type MESFET, one layer of silicon nitride is also made on grid, only when in cantilever switch and drop-down
When added DC voltage V2 is more than the actuation voltage of cantilever switch between electrode, it just can pull down cantilever switch and contact
Silicon nitride layer on MESFET grid, otherwise the cantilever switch be just constantly in suspended state, to make cantilever switch
Three cantilever beam grid N-type MESFET conductings then need to load DC voltage V1 in addition on its gate.
Described pull-down electrode is all grounded by high frequency choke coil, to prevent AC signal to be lost in by ground, in differential pair
In the first cantilever beam grid N-type MESFET, the second cantilever beam grid N-type MESFET cantilever switch between add local oscillation signal υ
LO, local oscillation signal υ LO are one kind in the two kinds of AC signals inputted in frequency mixer, and local oscillation signal υ LO are sufficiently high, work as local oscillator
Signal makes the cantilever switch of the first cantilever beam grid N-type MESFET in differential pair pull down the grid with MESFET when being in positive half period
Pole is close to, and MESFET width of depletion region is reduced conductive capability and is lifted and turned on, the second cantilever beam grid N-type MESFET, which is in, to close
Disconnected state, it is then opposite when local oscillation signal is in negative half period；Therefore the first cantilever beam grid N-type MESFET in differential pair, second
Cantilever beam grid N-type MESFET leads to a disconnected alternate state in the presence of local oscillation signal υ LO in one, that is, makes two
MESFET cantilever switch is in drop-down or the alternate state that suspends, and when cantilever switch is in suspended state, first is outstanding
The grid leakage current being just not present in arm beam grid N-type MESFET, the second cantilever beam grid N-type MESFET；In the 3rd cantilever beam grid N
Sufficiently large DC voltage V1 is added by high frequency choke coil on type MESFET grid, DC voltage V1 can make the 3rd to hang
Arm beam grid N-type MESFET is turned on, and is accessed separately by high frequency choke coil on the 3rd cantilever beam grid N-type MESFET cantilever switch
One DC voltage V2, DC voltage V2 are more than the actuation voltage of cantilever switch, make the 3rd cantilever beam grid N-type MESFET's
Cantilever switch drop-down is adjacent to silicon nitride layer on the 3rd cantilever beam grid N-type MESFET grid, this silicon nitride layer serve every
The effect of DC capacitor, DC voltage V2 can be prevented to be loaded on the grid of the MESFET, and remain able to make cantilever beam
The AC signal inputted on switch is loaded on the grid of the MESFET, and high frequency choke coil can prevent input exchange signal pair
Added DC voltage has an impact on 3rd cantilever beam grid N-type MESFET, on this basis by radiofrequency signal υ RF via outstanding
Arm beam switch is loaded on the 3rd cantilever beam grid N-type MESFET grid, and this radiofrequency signal υ RF are inputted in frequency mixer
Another in two kinds of AC signals；After two-way AC signal is all input to the mixer, that is, realize exchange letter
Number mixing, after mixing output by an intermediate-frequency filter select required for signal frequency υ IF.
Second of working method of the frequency mixer, if in the 3rd cantilever beam grid N-type MESFET below differential pair
The grid state that only loads DC voltage V1 and be on the 3rd cantilever beam grid N-type MESFET, the 3rd cantilever
Beam grid N-type MESFET is considered a constant-current source, and now the frequency mixer can also use as difference amplifier, this
Sample is designed to make the present invention to realize two kinds of different functions using same amount of transistor.
Beneficial effect：The gallium nitride base low-leakage current cantilever switch MESFET frequency mixer small volumes of the present invention, are easy to collect
Into, the gallium nitride material with high electron mobility is applied, can be achieved very high switching frequency, it is used outstanding in frequency mixer
Arm beam switchs MESFET, grid leakage current is effectively reduced at work, so that the cantilever switch in the present invention
The power consumption of MESFET frequency mixers is effectively reduced.
Brief description of the drawings
Fig. 1 is the top view of the gallium nitride base low-leakage current cantilever switch MESFET frequency mixers of the present invention,
Fig. 2 be gallium nitride base low-leakage current cantilever switch MESFET frequency mixers A-A' to profile,
Fig. 3 be gallium nitride base low-leakage current cantilever switch MESFET frequency mixers B-B' to profile,
Fig. 4 be gallium nitride base low-leakage current cantilever switch MESFET frequency mixers C-C' to profile,
Fig. 5 be gallium nitride base low-leakage current cantilever switch MESFET frequency mixers D-D' to profile,
Fig. 6 is the schematic diagram of Fig. 1 gallium nitride base low-leakage current cantilever switch MESFET frequency mixers.
Figure includes：P-type gallium nitride substrate 1, the first cantilever beam grid N-type MESFET 2, the second cantilever beam grid N-type MESFET
3rd, the 3rd cantilever beam grid N-type MESFET 4, lead 5, cantilever switch 6, grid 7, anchor area 8, N traps 9, active area 10, drop-down electricity
Pole 11, silicon nitride layer 12.
Embodiment
The gallium nitride base low-leakage current cantilever switch MESFET frequency mixers of the present invention, are produced on gallium nitride substrate 1, by
It is the first cantilever beam grid N-type MESFET 2, the second cantilever beam grid N-type MESFET that three, which have the N-type MESFET of cantilever switch,
3rd, the 3rd cantilever beam grid N-type MESFET 4 is formed, and one layer of silicon nitride has been made on the 3rd cantilever beam grid N-type MESFET 4 grid
12, MESFET are made up of grid 7, source electrode and drain electrode, and wherein source electrode and drain electrode forms Ohmic contact structure by metal and heavy doping N areas
Into grid forms Schottky contacts by metal and channel region and formed, and lead 5 is made by Al, left floating above MESFET grids 7
MEMS cantilever switch 6, the cantilever switch 6 are made up of titanium/gold/titanium, and anchor area 8 is produced on gallium nitride substrate 1, whole N-type
MESFET is produced in N traps 9, and active area 10 includes source electrode and drain electrode, pull-down electrode 11 between cantilever beam and substrate be present, under
Pulling electrode 11 is covered by silicon nitride material.
Three N-type MESFET of frequency mixer pull-down electrode 11 is all grounded by high frequency choke coil, in a differential pair
First cantilever beam grid N-type MESFET 2, the second cantilever beam grid N-type MESFET 3 cantilever switch between add local oscillation signal,
Local oscillation signal is one kind in the two kinds of AC signals inputted in frequency mixer, and local oscillation signal is sufficiently high, when local oscillation signal is in just
The drop-down of cantilever switch 6 and the MESFET grid of the first cantilever beam grid N-type MESFET2 of left side in differential pair can be made during the half period
Pole 7 is close to, and the width of depletion region in MESFET raceway grooves is reduced conductive capability lifting, right side the second cantilever beam grid N-type MESFET
3 are off state, then opposite when local oscillation signal is in negative half period.Therefore two MESFET in differential pair are in local oscillation signal
In the presence of break alternate state in one logical one, that is, two MESFET cantilever switch 6 is in drop-down or outstanding
Float alternate state, when cantilever switch 6 is in suspended state, the grid leakage current that is just not present in MESFET；In cantilever
Beam switchs and adds sufficiently large DC voltage V1 by high frequency choke coil on the 3rd cantilever beam grid N-type MESFET 4 grid, high
Frequency choke coil can prevent input exchange signal from being had an impact to DC voltage added on MESFET4, and DC voltage V1 can
So that the 3rd cantilever beam grid N-type MESFET 4 is turned on, pass through on the 3rd cantilever beam grid N-type MESFET 4 cantilever switch 6
High frequency choke coil accesses another DC voltage V2, and DC voltage V2 can make hanging for the 3rd cantilever beam grid N-type MESFET 4
The drop-down of arm beam switch 6 is adjacent to the silicon nitride layer 12 on the 3rd cantilever beam grid N-type MESFET 4 grid 7, this silicon nitride layer 12
The effect of stopping direct current °~appearance is served, DC voltage V2 can be prevented to be loaded on the grid 7 of the MESFET, and from still
AC signal is loaded on the grid 7 of the MESFET, on this basis add radiofrequency signal υ RF via cantilever switch 6
It is downloaded on the 3rd cantilever beam grid N-type MESFET 4 grid 7, this radiofrequency signal υ RF are the two kinds of exchanges inputted in frequency mixer
Another in signal；After two-way AC signal is all input to the mixer, you can realize the mixed of AC signal
Frequently, required signal frequency υ IF are selected in the output after mixing by an intermediate-frequency filter,
The preparation method of gallium nitride base low-leakage current cantilever switch MESFET frequency mixers includes following steps：
1) semi-insulating type gallium nitride substrate 1 is prepared；
2) one layer of silicon nitride, photoetching and etch silicon nitride are deposited, removes the silicon nitride of N-type MESFET channel regions；
3) N-type MESFET Channeling implantations, phosphorus is injected, is annealed in a nitrogen environment；After the completion of annealing, carry out at high temperature miscellaneous
Matter redistributes, and forms N-type MESFET channel region；
4) silicon nitride layer is removed：Silicon nitride is all removed using dry etching technology；
5) photoetched grid, the photoresist of gate regions is removed；
6) electron beam evaporation titanium/platinum/gold；
7) titanium/platinum/gold on remaining photoresist and photoresist is removed；
8) heat, titanium/platinum/billon is formed Schottky contacts with N-type MESFET raceway grooves；
9) one layer of silicon nitride 12 is being deposited on the grid of the MESFET pipes below differential pair；
10) photoresist is coated, photoetching simultaneously etches N-type MESFET source electrodes and the photoresist of drain region；
11) N-type heavy doping is carried out to the region, in the N-type heavily doped region that N-type MESFET source electrodes and drain region are formed,
Carry out short annealing processing；
12) photoetching source electrode and drain electrode, source electrode and the photoresist of drain electrode are removed；
13) it is evaporated in vacuo gold germanium ni au；
14) the gold germanium ni au on photoresist and photoresist is removed；
15) alloying forms Ohmic contact, forms source electrode and drain electrode；
16) photoresist is coated, removes the position of anchor area 8 of power line, ground wire, lead, pull-down electrode 11 and cantilever switch
Photoresist；
17) first layer gold is evaporated, its thickness is about 0.3 μm；
18) gold on photoresist and photoresist is removed, forms power line, ground wire, lead, pull-down electrode 11
19) and cantilever switch anchor area 8；
20) one layer is depositedThick silicon nitride；
21) photoetching and etch nitride silicon dielectric layer, the silicon nitride being retained in pull-down electrode 11；
22) deposit and photoetching polyimide sacrificial layer：The polyimides that 1.6 μ m-thicks are coated in GaN substrate is sacrificial
Domestic animal layer, it is desirable to fill up pit；Photoetching polyimide sacrificial layer, only retain the sacrifice layer below cantilever beam；
23) titanium/gold/titanium is evaporated, its thickness is 500/1500/
24) photoetching：The photoresist in place will be electroplated by removing；
25) plating gold, its thickness are 2 μm；
26) photoresist is removed：The photoresist in place need not be electroplated by removing；
27) titanium/gold/titanium is anti-carved, corrodes down payment, forms MEMS cantilever switch 6；
28) polyimide sacrificial layer is discharged：Developer solution soaks, and removes the polyimide sacrificial layer under cantilever beam,
Deionized water is soaked slightly, absolute ethyl alcohol dehydration, is volatilized, is dried under normal temperature.
Difference with the prior art of the present invention is
The gallium nitride base low-leakage current cantilever switch MESFET frequency mixers of the present invention are that have cantilever switch by three
N-type MESFET compositions, wherein also having made one layer of silicon nitride on the grid of MESFET below differential pair, both are new
The MESFET of type cantilever switch is being supported and suspended on MESFET grid by anchor area, the first cantilever beam grid N-type
MESFET 2, the second cantilever beam grid N-type MESFET 3 cantilever switch actuation voltage be designed to and MESFET threshold value electricity
Press equal.Two MESFET for forming differential pair, only when voltage added between cantilever switch and pull-down electrode is big
When MESFET threshold voltage, it just can pull down cantilever switch and contact MESFET grid, such MESFET can
Conducting, otherwise the cantilever switch is just constantly in suspended state, and MESFET is also at the state of shut-off, and cantilever switch is deposited
Grid leakage current in circuit is caused greatly reduces, so as to reduce the power consumption of the mixer；For in differential pair
The cantilever switch MESFET of lower section, only when added DC voltage between cantilever switch and pull-down electrode is more than cantilever
During the actuation voltage of beam switch, just cantilever switch can be made pull down and contact the silicon nitride layer on MESFET grid, otherwise this
Cantilever switch is just constantly in suspended state, and MESFET conducting then needs to load another DC voltage on its gate.
Second of working method of the frequency mixer in the present invention is, if only in the grid of the MESFET below differential pair
Pole loads DC voltage and the state for being on the MESFET, the MESFET are considered a constant-current source, this
When the frequency mixer can also be used as difference amplifier, it is such to be designed to make the present invention to utilize same amount of transistor
Realize two kinds of different functions.
Meet that the structure of conditions above can be considered that the gallium nitride base low-leakage current cantilever switch MESFET of the present invention is mixed
Frequency device.
Claims (3)
1. a kind of gallium nitride base low-leakage current cantilever switch field effect transistor mixer, it is characterised in that the frequency mixer makes
On p-type gallium nitride substrate (1), by three have cantilever switch MESFET be the first cantilever beam grid N-type MESFET (2),
Second cantilever beam grid N-type MESFET (3), the 3rd cantilever beam grid N-type MESFET (4) are formed, wherein the 3rd cantilever beam grid N-type
Also made one layer of silicon nitride (12) on MESFET (4) grid (7), remaining structure with the first cantilever beam grid N-type MESFET
(2), the second cantilever beam grid N-type MESFET (3) is identical, the first cantilever beam grid N-type MESFET (2), the second cantilever beam grid N-type
MESFET (3) forms differential pair, and its source electrode links together, and the drain electrode phase with the 3rd cantilever beam grid N-type MESFET (4) jointly
Connect, the 3rd cantilever beam grid N-type MESFET (4) source ground, the first cantilever beam grid N-type MESFET (2), the second cantilever beam grid N
Type MESFET (3) drain electrode connects with resistance respectively, and resistance uses as load, and two load resistances are connected with supply voltage jointly
Connect, local oscillation signal υ LO are in differential pair the first cantilever beam grid N-type MESFET (2), the second cantilever beam grid N-type MESFET (3) cantilever
Being inputted between beam switch, radiofrequency signal υ RF are then loaded on the 3rd cantilever beam grid N-type MESFET (4) cantilever switch (6),
Output signal passes through the signal υ IF required for an intermediate-frequency filter frequency-selecting output；MESFET is by grid (7), source electrode and drain electrode
Form, wherein source electrode and drain electrode is formed Ohmic contact and formed by metal and heavy doping N areas, and grid forms Xiao by metal and channel region
Te Ji contacts are formed, and lead (5) is made by Al, and MEMS cantilever switch (6) is left floating above MESFET grids (7), and this is outstanding
Arm beam switch (6) is made up of titanium-gold-titanium, and anchor area (8) are produced on p-type gallium nitride substrate (1), and whole N-type MESFET is produced on
In N traps (9), active area (10) includes source electrode and drain electrode, pull-down electrode (11) between cantilever switch and substrate be present, drop-down
Electrode (11) is covered by silicon nitride material.
2. gallium nitride base low-leakage current cantilever switch field effect transistor mixer according to claim 1, its feature
It is in the first cantilever beam grid N-type MESFET (2), the second cantilever beam grid N-type MESFET (3), the 3rd cantilever beam grid N-type MESFET
(4) in, cantilever switch (6) is on the grid (7) for being supported and suspended on MESFET by anchor area (8), the first cantilever beam grid N
Type MESFET (2), the second cantilever beam grid N-type MESFET (3) cantilever switch (6) actuation voltage design with its threshold value electricity
Press it is equal, only when voltage added between cantilever switch (6) and pull-down electrode (11) is more than its threshold voltage, ability
Pull down cantilever switch (6) and contact MESFET grid (7), the first cantilever beam grid N-type MESFET (2), the second cantilever beam
Grid N-type MESFET (3) can be turned on, and otherwise the cantilever switch (6) is just constantly in suspended state, the first cantilever beam grid N
Type MESFET (2), the second cantilever beam grid N-type MESFET (3) are also at the state of shut-off, and the presence of cantilever switch (6) causes
Grid leakage current greatly reduces, so as to reduce the power consumption of the mixer；For the 3rd cantilever beam grid N-type MESFET (4),
One layer of silicon nitride (12) is also made on grid (7), only when added between cantilever switch (6) and pull-down electrode (11)
When DC voltage V2 is more than the actuation voltage of cantilever switch (6), cantilever switch (6) can just pulled down and contacts MESFET's
Silicon nitride layer (12) on grid (7), otherwise the cantilever switch (6) be just constantly in suspended state, to make cantilever switch
3rd cantilever beam grid N-type MESFET (4) conductings then need to load DC voltage V1 in addition on its grid (7).
3. gallium nitride base low-leakage current cantilever switch field effect transistor mixer according to claim 1, its feature
It is that described pull-down electrode (11) is all grounded by high frequency choke coil, to prevent AC signal to be lost in by ground, in differential pair
In the first cantilever beam grid N-type MESFET (2), the second cantilever beam grid N-type MESFET (3) cantilever switch between add local oscillator
Signal υ LO, local oscillation signal υ LO are one kind in the two kinds of AC signals inputted in frequency mixer, and local oscillation signal υ LO are sufficiently high, when
Local oscillation signal make when being in positive half period the first cantilever beam grid N-type MESFET (2) in differential pair cantilever switch pull down with
MESFET grid (7) is close to, and MESFET width of depletion region is reduced conductive capability and is lifted and turned on, the second cantilever beam grid N
Type MESFET (3) is off state, then opposite when local oscillation signal is in negative half period；Therefore the first cantilever beam in differential pair
Grid N-type MESFET (2), the second cantilever beam grid N-type MESFET (3) break off a friendship in one logical one in the presence of local oscillation signal υ LO and replaced
State, that is, make two MESFET cantilever switch (6) be in drop-down or the alternate state that suspends, when cantilever beam is opened
When pass (6) is in suspended state, just it is not present in the first cantilever beam grid N-type MESFET (2), the second cantilever beam grid N-type MESFET (3)
Grid leakage current；By high frequency choke coil plus sufficiently large on the 3rd cantilever beam grid N-type MESFET (4) grid (7)
DC voltage V1, DC voltage V1 can make the 3rd cantilever beam grid N-type MESFET (4) turn on, in the 3rd cantilever beam grid N-type
Another DC voltage V2 is accessed by high frequency choke coil on MESFET (4) cantilever switch (6), DC voltage V2 is more than
The actuation voltage of cantilever switch (6), pull down the 3rd cantilever beam grid N-type MESFET (4) cantilever switch (6) and be adjacent to the 3rd
Silicon nitride layer (12) on cantilever beam grid N-type MESFET (4) grid (7), this silicon nitride layer (12) serve partiting dc capacitor
Effect, DC voltage V2 can be prevented to be loaded on the grid (7) of the MESFET, and from remaining able to make cantilever switch
(6) AC signal inputted on is loaded on the grid (7) of the MESFET, and high frequency choke coil can prevent input exchange signal
DC voltage added on 3rd cantilever beam grid N-type MESFET (4) is had an impact, on this basis passed through radiofrequency signal υ RF
It is loaded into by cantilever switch (6) on the 3rd cantilever beam grid N-type MESFET (4) grid (7), this radiofrequency signal υ RF are mixed
Another in the two kinds of AC signals inputted in frequency device；After two-way AC signal is all input to the mixer,
The mixing of AC signal is realized, required signal frequency υ IF are selected in the output after mixing by an intermediate-frequency filter.
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| US5250826A (en) * | 1992-09-23 | 1993-10-05 | Rockwell International Corporation | Planar HBT-FET Device |
| CN101083450B (en) * | 2007-07-16 | 2010-06-02 | 北京航空航天大学 | Substrate bias frequency mixer |
| US8139370B2 (en) * | 2009-03-24 | 2012-03-20 | Viasat, Inc. | Electronic system having field effect transistors and interconnect bumps on a semiconductor substrate |
| CN101944882A (en) * | 2010-08-24 | 2011-01-12 | 上海集成电路研发中心有限公司 | Mixer |
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