CN104900626B - 管芯到管芯接合以及相关联的封装构造 - Google Patents

管芯到管芯接合以及相关联的封装构造 Download PDF

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Publication number
CN104900626B
CN104900626B CN201510062148.2A CN201510062148A CN104900626B CN 104900626 B CN104900626 B CN 104900626B CN 201510062148 A CN201510062148 A CN 201510062148A CN 104900626 B CN104900626 B CN 104900626B
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tube core
package substrate
cavity
package
solder mask
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CN104900626A (zh
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O·G·卡尔哈德
D·马利克
R·V·马哈詹
A·P·阿卢尔
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Intel Corp
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Intel Corp
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    • H01L24/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
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Abstract

本公开内容的实施例涉及管芯到管芯接合以及相关联的集成电路(IC)封装构造。在一个实施例中，封装组件包括封装衬底、第一管芯和第二管芯，所述封装衬底具有设置在第一侧上的阻焊层以及与所述第一侧相对设置的第二侧，所述第一管芯安装在所述第一侧上并且具有通过一个或多个第一管芯级互连件来与所述封装衬底电耦合的有源侧，所述第二管芯使用一个或多个第二管芯级互连件来与所述第一管芯的所述有源侧接合，其中所述第二管芯的至少一部分设置在延伸到所述阻焊层中的空腔中。可以描述和/或要求保护其它实施例。

Description

管芯到管芯接合以及相关联的封装构造
技术领域
本公开内容的实施例总体上涉及集成电路领域，并且更具体地，涉及管芯到管芯接合以及相关联的集成电路(IC)封装构造。
背景技术
响应于顾客对诸如智能电话和平板电脑之类的移动计算设备的需求，正在开发具有更多功能的更小并且更轻的电子设备。在一些情况下，可以在一个封装中将多个管芯耦合到一起。为了在管芯之间建立高带宽连接，可能需要管芯之间具有非常短的互连件长度。例如，管芯的面对面接合可以在管芯之间提供短的电路径。然而，由于管芯的厚度，在一些构造中，面对面接合是困难的。当前的解决方案可以包括例如用于面对面凸点的单独的凸点形成(bumping)工艺，以提供相对于将管芯耦合到封装衬底的第一级互连件(FLI)而言更小的叠层高度，这可能是昂贵的。另一种当前解决方案可以包括将管芯的其中之一削薄到更小的厚度，这可能导致削薄的管芯更易于损坏并且造成产量损失。对于包括磁芯电感器的削薄的管芯而言，电感器的性能可能受到削薄的限制。此外，可能需要减小面对面接合构造的z高度，从而为新兴设备提供更薄的封装。
附图说明
通过结合附图参考以下具体实施方式可以容易地理解实施例。为了便于描述，相似的附图标记表示相似的结构元件。在附图中的图中，通过示例的方式而不是限制的方式示出了实施例。
图1示意性地示出了根据一些实施例的示例性集成电路(IC)封装组件的截面侧视图。
图2示意性地示出了根据一些实施例的面对面接合构造的截面侧视图。
图3示意性地示出了根据一些实施例的另一个面对面接合构造的截面侧视图。
图4示意性地示出了根据一些实施例的制造IC封装组件的方法的流程图。
图5示意性地示出了根据一些实施例的包括本文中所描述的IC封装组件的计算设备。
图6示意性地示出了根据一些实施例的另一个面对面接合构造的截面侧视图。
具体实施方式
本公开内容的实施例描述了管芯到管芯接合以及相关联的集成电路(IC)封装构造。在以下描述中，将使用本领域技术人员通常采用的用于将他们的工作实质传达给本领域的其他技术人员的术语来描述说明性实施例的各种方面。然而，对本领域技术人员来说显而易见的是，可以仅利用所描述的方面中的一些方面来实践本公开内容的实施例。出于解释的目的，阐述了具体的数字、材料和构造以提供对说明性实施方式的深入理解。然而，对本领域技术人员来说显而易见的是，可以在没有这些具体细节的情况下实践本公开内容的实施例。在其它实例中，省略或简化了公知的特征以避免使说明性实施方式难以理解。
在以下具体实施方式中，参考了形成本文的一部分的附图，其中在整个说明书中，相似的附图标记表示相似的部分，并且其中通过说明实施例的方式示出了可以实践本公开内容的主题内容的实施例。应当理解的是，可以利用其它实施例，并且在不脱离本公开内容的范围的情况下可以做出结构上或逻辑上的改变。因此，下面的具体实施方式不能被理解为限制性意义，并且实施例的范围由所附的权利要求及其等同物来限定。
出于本公开内容的目的，术语“A和/或B”表示(A)、(B)或(A和B)。出于本公开内容的目的，术语“A、B、和/或C”表示(A)、(B)、(C)、(A和B)、(A和C)、(B和C)或(A、B和C)。
描述可以使用基于透视的描述，例如顶部/底部、内部/外部、上方/下方等。这种描述仅用于方便论述，并且并非旨在将本文中所描述的实施例的应用限制于任何特定方向。
描述可以使用短语“在实施例中”，其可以指代相同或不同实施例中的一个或多个。此外，关于本公开内容的实施例所使用的术语“包括”、“包含”、“具有”等是同义词。
本文中可以使用术语“与…耦合”及其衍生物。“耦合”可以表示以下内容的一个或多个。“耦合”可以表示两个或更多元件直接物理或电接触。然而，“耦合”还可以表示两个或更多元件彼此间接接触，但仍彼此协作或相互作用，并且可以表示一个或多个其它元件耦合或连接在所述彼此耦合的元件之间。术语“直接耦合”可以表示两个或更多元件直接接触。
在各种实施例中，短语“第一特征形成、淀积、或以其它方式设置在第二特征上”可以表示第一特征形成、淀积、或设置在第二特征之上，并且第一特征的至少一部分可以与第二特征的至少一部分直接接触(例如，直接物理和/或电接触)或间接接触(例如，在第一特征与第二特征之间具有一个或多个其它特征)。
如本文中所使用的，术语“模块”可以指以下部件的一部分或包括以下部件：特殊应用集成电路(ASIC)、电子电路、片上***(SoC)、执行一个或多个软件或固件程序的处理器(共享、专用或组)和/或存储器(共享、专用或组)、组合逻辑电路、和/或提供所描述的功能的其它适当部件。
图1示意性地示出了根据一些实施例的示例性集成电路(IC)封装组件(以下为“封装组件100”)的截面侧视图。在一些实施例中，封装组件100可以包括与封装衬底104电耦合和/或物理耦合的两个或更多管芯102a、102b。在一些实施例中，如可以看到的，封装衬底104可以与电路板106电耦合。
管芯102a、102b均可以表示使用半导体制造技术由半导体材料(例如，硅)制作的分立的产品，所述半导体制造技术例如是与形成CMOS器件结合使用的薄膜淀积、光刻、蚀刻等。在一些实施例中，管芯102a、102b中的每一个可以是处理器、存储器、SoC或ASIC，或者包括它们，或者是它们的一部分。
在一些实施例中，可以使用第一级互连件(FLI)以面对面构造将管芯102a接合到管芯102b，本文中又将第一级互连件称为管芯级互连件108。管芯级互连件108可以包括多种适当结构中的任何结构，所述适当结构包括例如凸点、柱或另一个适当结构。管芯级互连件108还可以将初级管芯102a与封装衬底104耦合。
在一些实施例中，管芯级互连件108可以被配置为在管芯102a、102b和/或其它电器件之间(例如，经由封装衬底104)路由电信号。电信号可以包括例如结合管芯102a、102b的操作所使用的输入/输出(I/O)信号和/或电源/接地信号。
在一些实施例中，管芯102a可以表示初级管芯，并且管芯102b可以表示以面对面构造接合到管芯102a的次级管芯。例如，在一些实施例中，管芯102a可以表示处理器，并且管芯102b可以表示存储器、功率管理部件(例如，具有电容器和/或电感器等)或用于路由电信号的电桥。在其它实施例中，管芯102a、102b可以表示其它适当的IC设备。
如所描绘的，可以将管芯102a以倒装芯片构造与封装衬底104直接耦合。在倒装芯片构造中，使用管芯级互连件108将管芯102a的包括有源电路的有源侧A附接到封装衬底104的表面，管芯级互连件108还可以将管芯102a与封装衬底104电耦合(例如，如结合图2-3所描绘的，管芯级互连件108可以延伸穿过阻焊层105)。例如，如可以看到的，管芯102a的有源侧A可以包括晶体管器件，并且非有源侧I可以被设置在有源侧A的相对侧。
如可以看到的，管芯102b可以设置在形成于阻焊层105中的空腔103中。在一些实施例中，可以使用例如粘合剂或焊料来将管芯102b的背面与空腔103内的封装衬底104耦合。阻焊层105可以是封装衬底104的第一侧S1上的最外层。在一些实施例中，阻焊层105可以由诸如环氧树脂之类的电绝缘聚合物构成，以提供对下层部件的保护，使其不受诸如氧化之类的环境危害。在其它实施例中，阻焊层105可以由其它适当的材料构成。
根据各种实施例，阻焊层105中的空腔103可以容纳管芯102b的一部分或整个管芯102b。在一些实施例中，空腔103可能未完全延伸穿过阻焊层105，或者可以延伸到阻焊层105下面的衬底层中(例如，诸如内建层(build-up layer)之类的层压层)，以容纳管芯102b的厚度。例如，在图6中，空腔103延伸到封装衬底104的设置在阻焊层105下方的层压层中，并且第二管芯102b的至少一部分设置在空腔103的延伸到层压层中的一部分内。相对于不利用空腔103内的空间的封装组件，空腔103内的管芯102b的放置可以减小封装组件100的z高度Z。
在一些实施例中，封装衬底104是具有芯和/或内建层的基于环氧树脂的层压衬底，例如，Ajinomoto内建薄膜(ABF)衬底。在一些实施例中，封装衬底104可以是无芯衬底。在其它实施例中，封装衬底104可以是电路板，例如，使用任何适当的PCB技术形成的印刷电路板(PCB)。例如，在一些实施例中，封装衬底104可以用作母板(例如，图5的母板502)。封装衬底104可以包括其它适当类型的衬底。
封装衬底104可以包括被配置为路由到或来自管芯102a和/或102b的电信号的电布线特征。电布线特征可以包括例如设置在封装衬底104的一个或多个表面上的接触部(例如，图2的焊盘115)和/或诸如线(例如，图2的线112b)、过孔(例如，图2的通孔112a)或其它互连件结构之类的内部布线特征，以路由电信号使其穿过封装衬底104。例如，在一些实施例中，封装衬底104可以包括诸如焊盘之类的被配置为接收管芯102a的相应管芯级互连件108的电布线特征。在一些实施例中，如可以看到的，诸如模制化合物113或底部填充材料之类的电绝缘材料可以包封封装衬底104的至少一部分、管芯102a、102b和/或管芯级互连件108。
在一些实施例中，封装衬底104可以与电路板106耦合。电路板106可以是由诸如环氧树脂层压板之类的电绝缘材料构成的印刷电路板(PCB)。例如，电路板106可以包括由诸如聚四氟乙烯、诸如阻燃剂4(FR-4)、FR-1、棉纸之类的酚醛棉纸材料、以及诸如CEM-1或CEM-3之类的环氧树脂材料之类的材料、或者使用环氧树脂预浸材料来层压在一起的布纹玻璃材料构成的电绝缘层。可以形成穿过电绝缘层的诸如迹线、沟槽、过孔之类的互连件结构(未示出)，以路由管芯102a和/或管芯102b的电信号使其穿过电路板106。在其它实施例中，电路板106可以由其它适当材料构成。在一些实施例中，电路板106是母板(例如，图5的母板502)。
诸如焊球110之类的也可以被称为封装级互连件的第二级互连件(SLI)可以耦合到封装衬底104的第二侧S2上和/或电路板106上的一个或多个焊盘，以形成相应的焊点，其被配置为在封装衬底104与封装衬底104外部的电器件(例如，电路板106)之间进一步路由电信号。在其它实施例中，可以使用其它适当的技术来将封装衬底104与电路板106物理和/或电耦合。
在其它实施例中，封装组件100可以包括各种各样的其它适当的构造，包括例如倒装芯片和/或引线键合构造、中介层、包括封装内***(SiP)和/或封装上封装(PoP)构造的多芯片封装构造的适当组合。在一些实施例中，可以使用其它适当的技术来在管芯102a、102b和封装组件100的其它部件之间路由电信号。封装组件100可以包括本文中所描述的实施例的适当组合。
图2示意性地示出了根据一些实施例的面对面接合构造200的截面侧视图。根据各种实施例，构造200包括安装在封装衬底104上的管芯102a。管芯102a具有使用一个或多个第一管芯级互连件108a来与封装衬底104电耦合的有源侧A。可以使用一个或多个第二管芯级互连件108b来将管芯102a的有源侧A与管芯102b的有源侧A接合。
在管芯102b是功率管理管芯或电桥的实施例中，可以将管芯102a的有源侧A与管芯102b的包括电接触部的一侧接合。在一些实施例中，管芯102b的至少一部分设置在延伸到阻焊层105中的空腔103中。在一些实施例中，可以将厚度约为30微米到50微米的管芯102b设置在空腔103内。在其它实施例中，空腔103内可以容纳其它厚度的管芯102b。
在一些实施例中，空腔103可以延伸到封装衬底104的位于阻焊层105下面的层压层中。例如，空腔103可以延伸到封装衬底104的包括诸如过孔112a和线112b之类的内部布线的层中，以容纳管芯102b的厚度。在这种实施例中，可以使用在过孔112a和/或线112b的制作过程中形成的诸如板之类的金属特征(例如，铜)来提供用于阻焊层105下面的材料(例如，环氧树脂层压材料)的激光钻孔的停止层，并且管芯102b可以与金属特征耦合。
在一些实施例中，可以根据结合空腔103所描述的原理来形成多个空腔。例如，可以将多个管芯(未示出)以面到面的方式与管芯102a耦合，因为102b或构造200可以在同一封装衬底104上重复多次。
在一些实施例中，可以将诸如环氧树脂材料的底部填充物115设置在管芯与第二管芯级互连件108b之间。底部填充物115可以促进管芯102a、102b之间的粘附，并且保护第二管芯级互连件108b和/或管芯102a、102b的有源表面。
图3示意性地示出了根据一些实施例的另一个面对面接合构造300的截面侧视图。在构造300中，将多个管芯102a、102c与设置在空腔103中的管芯102b耦合。可以将管芯102c安装在封装衬底104上，并且管芯102c可以具有通过一个或多个第三管芯级互连件108c与封装衬底104电耦合的有源侧A。还可以使用一个或多个第四管芯级互连件108d来将管芯102c的有源侧A与管芯102b接合。如可以看到的，空腔103可以设置在被配置为分别与管芯级互连件108a和108c耦合的接触部(例如，焊盘115)之间。
在一些实施例中，管芯102b可以被配置为在管芯102a、102c之间路由电信号。例如，在一个实施例中，管芯102a、102c可以是处理器，并且管芯102b可以用作管芯102a、102c之间的硅桥。
在一些实施例中，可以将集成散热器(IHS)333与管芯102a、102c中的一个或多个耦合，以便于从管芯散热。例如，可以使用热粘合剂将IHS333耦合到管芯102a、102c的非有源侧I。
空腔103内的管芯102b的放置可以提供各种益处。例如，这种放置可以允许在面对面接合构造(例如，图2或图3的构造200或300)中使用较厚的管芯102b，这可以通过避免对管芯的削薄处理来提高管芯102b的产量。此外，在一些实施例中，管芯102b可以包括磁芯电感器，在不对功能造成不利影响的情况下磁芯电感器可以具有能够不被削薄的厚度。此外，可以使用与用于形成管芯级互连件(例如，108a、108c)的可焊材料的阻焊层105中的阻焊开口的光刻工艺相同的光刻工艺来执行空腔103的形成，这可以不对工艺产生额外的显著成本。此外，可以通过将管芯102b放置在空腔103内来减小封装组件的z高度。本文中所公开的实施例可以提供其它益处。
图4示意性地示出了根据一些实施例的用于制造IC封装组件(例如，图1的封装组件100)的方法400的流程图。方法400可以与结合图1-3所描述的实施例一致，反之亦然。
在402处，方法400可以包括提供封装衬底(例如，图1-3的封装衬底104)，该封装衬底具有设置在第一侧(例如，图1的S1)上的阻焊层(图1-3的阻焊层105)和与第一侧相对的第二侧(例如，图1的S2)。
在404处，方法400可以包括在阻焊层中形成空腔(例如，图1-3的空腔103)。在一些实施例中，阻焊层的材料可以是光可限定的，并且可以通过使用光刻工艺去除阻焊层的材料来形成空腔。在一些实施例中，同一光刻工艺用于同时形成空腔和用于管芯级互连件的可焊材料的阻焊开口(SRO)。
在空腔延伸到封装衬底的位于阻焊层下面的材料中的实施例中，可以使用诸如在过孔(例如，图2-3的过孔112a)和/或线(例如，图2-3的线112b)的制作过程中形成的板之类的金属特征(例如，铜)来提供用于阻焊层下面的材料(例如，环氧树脂层压材料)的激光钻孔的停止层。
在406处，方法400可以包括将第一管芯(例如，管芯102b)耦合到空腔内的封装衬底。在一些实施例中，将第一管芯耦合到封装衬底可以包括使用与封装衬底上的第一管芯级互连件(例如，图2或图3的第一管芯级互连件108a)对应的接触部(例如，图2-3的焊盘115)来将第一管芯在空腔内对准。在空腔延伸到封装衬底的下层材料中的实施例中，可以将第一管芯与用作停止层的金属特征耦合。
在408处，方法400可以包括使用一个或多个第一管芯级互连件(例如，图2或图3的第一管芯级互连件108a)来将第二管芯(例如，图2或图3的管芯102a)的有源侧与第一管芯耦合。在一些实施例中，可以使用大规模回流焊或热压接合工艺来形成第一管芯级互连件。
在410处，方法400可以包括使用一个或多个第二管芯级互连件(例如，图2或图3的第二管芯级互连件108b)来将第二管芯的有源侧与封装衬底的第一侧耦合。在一些实施例中，可以使用大规模回流焊或热压接合工艺来形成第二管芯级互连件。
在第二管芯级互连件包括可焊材料的一些实施例中，可以将可焊材料沉积在第一管芯上(例如，可以使图2的管芯102b形成凸点)，而可以不将可焊材料沉积在第二管芯上(例如，可以不使图2的管芯102a形成凸点)，这可以节省成本，并且实现第一管芯与第二管芯之间的较小间隙。
在412处，方法400可以包括使用封装级互连件(例如，图1的焊球110)来将封装衬底的第二侧与电路板(例如，图1的电路板106)耦合。按照最有助于理解所要求保护的主题内容的方式来将各种操作依次描述为多个分立的操作。然而，不应将描述的顺序解释为暗示这些操作必须依赖于该顺序。例如，在一些实施例中，工艺流程可以包括在阻焊层中形成空腔，随后通过使第一管芯与封装衬底上的凸点对齐来使用诸如快速固化胶之类的粘合剂将第一管芯面朝上地放置在空腔中，随后使用大规模回流焊或热压接合来同时将第二管芯与第一管芯和封装衬底附接。在其它实施例中，工艺流程可以包括在阻焊层中形成空腔并且在晶片级或者单一化级上将第一管芯与第二管芯附接到一起，随后通过在管芯之间沉积底部填充物来进一步固定管芯，随后使用大规模回流焊或热压接合将管芯的组合附接到封装衬底。方法400可以包括其它适当的顺序变化。
可以将本公开内容的实施例实施到使用任何适合的硬件和/或软件的***中，以按需要进行配置。图5示意性地示出了根据一些实施例的包括本文中所描述的IC封装组件(例如，图1的封装组件)的计算设备500。计算设备500可以(例如，在外壳508中)容纳诸如母板502之类的板。母板502可以包括很多部件，包括但不限于处理器504和至少一个通信芯片506。处理器504可以物理和电耦合到母板502。在一些实施方式中，至少一个通信芯片506也可以物理和电耦合到母板502。在其它实施方式中，通信芯片506可以是处理器504的一部分。
取决于其应用，计算设备500可以包括其它部件，所述其它部件可以或可以不与母板502物理和电耦合。这些其它部件可以包括但不限于易失性存储器(例如，DRAM)、非易失性存储器(例如，ROM)、闪速存储器、图形处理器、数字信号处理器、密码处理器、芯片集、天线、显示器、触摸屏显示器、触摸屏控制器、电池、音频编解码器、视频编解码器、功率放大器、全球定位***(GPS)设备、罗盘、盖格计数器、加速度计、陀螺仪、扬声器、照相机、以及大容量存储设备(例如硬盘驱动器、光盘(CD)、数字多功能盘(DVD)，等等)。
通信芯片506可以实现用于来往于计算设备500的数据传输的无线通信。术语“无线”及其衍生词可以用于描述电路、设备、***、方法、技术、通信信道等等，其可以通过使用调制的电磁辐射而经由非固态介质传送数据。术语并不暗示相关联的设备不包含任何线路，尽管在一些实施例中相关联的设备可能不包含任何线路。通信芯片506可以实施多种无线标准或协议中的任何一种，所述多种无线标准或协议包括但不限于电气和电子工程师学会(IEEE)标准，其包括Wi-Fi(IEEE 802.11族)、IEEE 802.16标准(例如，IEEE 802.16-2005修正案)、长期演进(LTE)项目及其任何修正案、更新、和/或修订本(例如改进的LTE项目、超移动宽带(UMB)项目(也被称为“3GPP2”)等)。兼容BWA网络的IEEE 802.16通常被称为WiMAX网络，WiMAX网络是代表全球微波接入互操作性的首字母缩写，其是通过IEEE 802.16标准的一致性和互操作性测试的产品的认证标志。通信芯片506可以根据全球移动通信***(GSM)、通用分组无线业务(GPRS)、通用移动电信***(UMTS)、高速分组接入(HSPA)、演进的HSPA(E-HSPA)、或LTE网络操作。通信芯片506可以根据增强型数据GSM演进(EDGE)、GSMEDGE无线接入网络(GERAN)、通用陆地无线接入网络(UTRAN)或演进的UTRAN(E-UTRAN)来进行操作。通信芯片506可以根据码分多址(COMA)、时分多址(TDMA)、数字增强型无绳通信(DECT)、演进数据优化(EV-DO)及其衍生物、以及被指定为3G，4G，5G和更高代的任何其它无线协议来进行操作。在其它实施例中，通信芯片506可以根据其它无线协议来进行操作。
计算设备500可以包括多个通信芯片506。例如，第一通信芯片506可以专用于较短范围的无线通信，例如，Wi-Fi和蓝牙，并且第二通信芯片506可以专用于较长范围的无线通信，例如，GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO等。
计算设备500的处理器504可以封装在如本文中所描述的IC封装组件(例如，图1的封装组件100)中。例如，图1的电路板106可以是母板502，并且处理器504可以是与管芯102b接合并且安装在图1的封装衬底104上的管芯102a或102c。封装衬底104和母板502可以使用诸如焊球110之类的封装级互连件来耦合在一起。根据本文中所描述的实施例，可以实施其它适合的构造。术语“处理器”可以指处理来自寄存器和/或存储器的电子数据以将这些电子数据转换成可以存储在寄存器和/或存储器中的其它电子数据的任何设备或设备的一部分。
通信芯片506还可以包括可以封装在本文中所描述的IC封装组件(例如，图1的封装组件100)中的管芯。在其它实施方式中，容纳在计算设备500中的另一个部件(例如，存储器件或其它集成电路器件)可以包括可以封装在本文中所描述的IC封装组件(例如，图1的封装组件100)中的管芯。
在各种实施方式中，计算设备500可以是膝上型电脑、上网本、笔记本、超级本、智能电话、平板电脑、个人数字助理(PDA)、超级移动PC、移动电话、台式计算机、服务器、打印机、扫描仪、监视器、机顶盒、娱乐控制单元、数字照相机、便携式音乐播放器或数字录像机。在一些实施例中，计算设备500可以是移动计算设备。在其它实施方式中，计算设备500可以是处理数据的任何其它电子设备。
示例
根据各种实施例，本公开内容描述了一种装置(例如，封装组件)。封装组件的示例1可以包括封装衬底、第一管芯和第二管芯，封装衬底具有设置在第一侧上的阻焊层以及与第一侧相对设置的第二侧，第一管芯安装在第一侧上并且具有通过一个或多个第一管芯级互连件来与封装衬底电耦合的有源侧，第二管芯使用一个或多个第二管芯级互连件来与第一管芯的有源侧接合，其中第二管芯的至少一部分设置在延伸到阻焊层中的空腔中。示例2可以包括示例1的封装组件，其中空腔延伸到封装衬底的设置在阻焊层下面的层压层中，并且第二管芯的至少一部分设置在空腔的延伸到层压层中的一部分中。示例3可以包括示例1的封装组件，其还包括第三管芯，第三管芯安装在封装衬底的第一侧上并且具有通过一个或多个第三管芯级互连件来与封装衬底电耦合的有源侧，其中第二管芯通过一个或多个第四管芯级互连件来与第三管芯的有源侧接合。示例4可以包括示例3的封装组件，其中第二管芯被配置为在第一管芯与第三管芯之间路由电信号。示例5可以包括示例1的封装组件，其中空腔是第一空腔，封装组件还包括形成在阻焊层中的第二空腔，其中第三管芯的至少一部分设置在第二空腔中。示例6可以包括示例1-5中的任何一个的封装组件，其还包括与第一管芯的非有源侧耦合的集成散热器(IHS)和设置在第一管芯与第二管芯之间的环氧树脂材料。示例7可以包括示例1-5中的任何一个的封装组件，其中厚度为30微米到50微米的第二管芯设置在空腔中。示例8可以包括示例1-5中的任何一个的封装组件，其中第一管芯是处理器，并且第二管芯是存储器或功率管理部件。示例9可以包括示例8的封装组件，其中第二管芯是具有磁芯电感器的功率管理部件。示例10可以包括示例1-5中的任何一个的封装组件，其还包括设置在封装衬底的第二侧上、并且被配置为在第一管芯与封装衬底外部的电器件之间路由电信号的封装级互连件。
根据各种实施例，本公开内容描述了另一种装置(例如，封装衬底)。封装衬底的示例11可以包括设置在第一侧上的阻焊层以及与第一侧相对设置的第二侧、设置在第一侧上并且被配置为与设置在第一管芯的有源侧上的管芯级互连件耦合的接触部、以及延伸到阻焊层中的空腔，空腔被配置为在第二管芯与第一管芯的有源侧接合时容纳第二管芯的至少一部分。示例12可以包括示例11的封装衬底，其中空腔延伸到封装衬底的设置在阻焊层下面的层压层中。示例13可以包括示例11-12中的任何一个的封装衬底，其中接触部是第一接触部，封装衬底还包括设置在第一侧上并且被配置为与设置在第三管芯的有源侧上的管芯级互连件耦合的第二接触部，其中空腔设置在第一接触部与第二接触部之间。
根据各种实施例，本公开内容描述了一种方法。方法的示例14可以包括：提供具有设置在第一侧上的阻焊层以及与第一侧相对设置的第二侧的封装衬底；在阻焊层中形成空腔；在空腔内将第一管芯耦合到封装衬底；使用一个或多个第一管芯级互连件来将第二管芯的有源侧与第一管芯耦合；以及使用一个或多个第二管芯级互连件来将第二管芯的有源侧与封装衬底的第一侧耦合。示例15可以包括示例14的方法，其中形成空腔包括使用光刻工艺来去除阻焊层的材料。示例16可以包括示例14-15中的任何一个的方法，其中使用单个热处理同时执行将第二管芯的有源侧与第一管芯耦合以及将第二管芯的有源侧与封装衬底的第一侧耦合，并且将第一管芯耦合到封装衬底发生在将第二管芯的有源侧与第一管芯耦合之前。示例17可以包括示例16的方法，其中将第一管芯耦合到封装衬底包括：使用封装衬底的与第二管芯级互连件相对应的接触部作为对准的参考来在空腔内将第一管芯对准，并且使用粘合剂将第一管芯附接在空腔内。示例18可以包括示例14的方法，其中在执行在空腔内将第一管芯耦合到封装衬底之前执行将第二管芯的有源侧与第一管芯耦合，并且在将第二管芯的有源侧与第一管芯耦合之后执行将第二管芯的有源侧与封装衬底的第一侧耦合。
根据各种实施例，本公开内容描述了一种***(例如，计算设备)。计算设备的示例19可以包括电路板和与电路板耦合的封装组件，封装组件包括封装衬底、第一管芯和第二管芯，封装衬底具有设置在第一侧上的阻焊层以及与第一侧相对设置的第二侧，第一管芯安装在第一侧上并且具有通过一个或多个第一管芯级互连件与封装衬底电耦合的有源侧，第二管芯使用一个或多个第二管芯级互连件与第一管芯的有源侧接合，其中第二管芯的至少一部分设置在延伸到阻焊层中的空腔中。示例20可以包括示例19的计算设备，其中计算设备是移动计算设备，其包括与电路板耦合的天线、显示器、触摸屏显示器、触摸屏控制器、电池、音频编解码器、视频编解码器、功率放大器、全球定位***(GPS)设备、罗盘、盖格计数器、加速度计、陀螺仪、扬声器或者照相机中的一个或多个。
各种实施例可以包括上述实施例的任何适合的组合，所述实施例包括以上以结合形式(和)描述的实施例的替代的(或)实施例(例如，“和”可以是“和/或”)。此外，一些实施例可以包括具有存储于其上的指令的一个或多个制造的物品(例如，非暂态计算机可读介质)，当执行所述指令时，产生上述实施例中的任何实施例的动作。此外，一些实施例可以包括具有用于实施上述实施例的各种操作的任何适合的模块的装置或***。
包括摘要中所描述的内容的所示出的实施方式的上述描述并非旨在穷举或将本公开内容的实施例限制于所公开的精确形式。尽管出于说明的目的而在本文中描述了具体实施方式和示例，但是相关领域技术人员将认识到，在本公开内容的范围内可以做出各种等同修改。
可以根据以上具体实施方式对本公开内容的实施例做出这些修改。以下权利要求中使用的术语不应被解释为将本公开内容的各种实施例限制于说明书和权利要求中所公开的具体实施方式。相反，范围将完全由根据所建立的由权利要求诠释的原则来解释的以下权利要求来确定。

Claims (18)

1.一种封装组件，包括：
封装衬底，其具有设置在第一侧上的阻焊层和与所述第一侧相对设置的第二侧；
第一管芯，其安装在所述第一侧上并且具有通过一个或多个第一管芯级互连件来与所述封装衬底电耦合的有源侧；以及
第二管芯，其使用一个或多个第二管芯级互连件来与所述第一管芯的所述有源侧接合，其中，所述第二管芯的至少一部分设置在延伸穿过所述阻焊层并且延伸到所述封装衬底的设置在所述阻焊层下面的层压层中的空腔中，并且所述第二管芯的至少一部分设置在所述空腔的延伸到所述层压层中的部分中，以使得所述层压层的材料位于所述封装衬底的所述第二侧与所述第二管芯之间；
金属特征，其设置在所述层压层中、在所述封装衬底的所述第二侧与所述第二管芯之间，其中，所述金属特征是大体上平行于所述第二管芯的停止层并且与所述空腔直接相邻并大体上延伸跨过所述第二管芯；
其中，所述空腔的延伸到所述封装衬底中的深度能够根据所述第二管芯的厚度而变化。
2.根据权利要求1所述的封装组件，还包括：
第三管芯，其安装在所述封装衬底的所述第一侧上并且具有通过一个或多个第三管芯级互连件来与所述封装衬底电耦合的有源侧，其中，所述第二管芯通过一个或多个第四管芯级互连件来与所述第三管芯的所述有源侧接合。
3.根据权利要求2所述的封装组件，其中，所述第二管芯被配置为在所述第一管芯与所述第三管芯之间路由电信号。
4.根据权利要求2所述的封装组件，其中，所述空腔为第一空腔，所述封装组件还包括：
形成在所述阻焊层中的第二空腔，其中，所述第三管芯的至少一部分设置在所述第二空腔中。
5.根据权利要求1-4中的任一项所述的封装组件，还包括：
与所述第一管芯的非有源侧耦合的集成散热器(IHS)；以及
设置在所述第一管芯与所述第二管芯之间的环氧树脂材料。
6.根据权利要求1-4中的任一项所述的封装组件，其中，厚度为30微米到50微米的所述第二管芯设置在所述空腔中。
7.根据权利要求1-4中的任一项所述的封装组件，其中，所述第一管芯为处理器，并且所述第二管芯为存储器或功率管理部件。
8.根据权利要求7所述的封装组件，其中，所述第二管芯为具有磁芯电感器的功率管理部件。
9.根据权利要求1-4中的任一项所述的封装组件，还包括：
封装级互连件，其设置在所述封装衬底的所述第二侧上，并且被配置为在所述第一管芯与所述封装衬底外部的电器件之间路由电信号。
10.一种封装衬底，包括：
设置在所述封装衬底的第一侧上的阻焊层；
与所述第一侧相对设置的所述封装衬底的第二侧；
接触部，其设置在所述第一侧上并且被配置为与设置在第一管芯的有源侧上的管芯级互连件耦合；以及
延伸穿过所述阻焊层并且延伸到所述封装衬底的设置在所述阻焊层下面的层压层中的空腔，所述空腔被配置为在第二管芯与所述第一管芯的所述有源侧接合时容纳所述第二管芯的至少一部分，以使得所述层压层的材料位于所述封装衬底的所述第二侧与所述第二管芯之间；
金属特征，其设置在所述层压层中、在所述封装衬底的所述第二侧与所述第二管芯之间，其中，所述金属特征是大体上平行于所述第二管芯的停止层并且与所述空腔直接相邻并大体上延伸跨过所述第二管芯；
其中，所述空腔的延伸到所述封装衬底中的深度能够根据所述第二管芯的厚度而变化。
11.根据权利要求10所述的封装衬底，其中，所述接触部为第一接触部，所述封装衬底还包括：
第二接触部，其设置在所述第一侧上并且被配置为与设置在第三管芯的有源侧上的管芯级互连件耦合，其中，所述空腔设置在所述第一接触部与所述第二接触部之间。
12.一种用于制造封装组件的方法，包括：
提供封装衬底，所述封装衬底具有设置在第一侧上的阻焊层和与所述第一侧相对设置的第二侧；
在所述阻焊层中形成空腔，其中，所述空腔延伸穿过所述阻焊层并且延伸到所述封装衬底的设置在所述阻焊层下面的层压层中；
在所述空腔内将第一管芯耦合到所述封装衬底，其中，所述第一管芯的至少一部分设置在所述空腔的延伸到所述层压层中的部分中，以使得所述层压层的材料位于所述封装衬底的所述第二侧与所述第一管芯之间；
使用一个或多个第一管芯级互连件来将第二管芯的有源侧与所述第一管芯耦合；以及
使用一个或多个第二管芯级互连件来将所述第二管芯的所述有源侧与所述封装衬底的所述第一侧耦合；
形成金属特征，所述金属特征设置在所述层压层中、在所述封装衬底的所述第二侧与所述第一管芯之间，其中，所述金属特征是大体上平行于所述第一管芯的停止层并且与所述空腔直接相邻并大体上延伸跨过所述第一管芯；
其中，所述空腔的延伸到所述封装衬底中的深度能够根据所述第一管芯的厚度而变化。
13.根据权利要求12所述的方法，其中，形成所述空腔包括使用光刻工艺来去除所述阻焊层的材料。
14.根据权利要求12-13中的任一项所述的方法，其中：
使用单个热处理来同时执行将所述第二管芯的所述有源侧与所述第一管芯耦合以及将所述第二管芯的所述有源侧与所述封装衬底的所述第一侧耦合；并且
将所述第一管芯耦合到所述封装衬底发生在将所述第二管芯的所述有源侧与所述第一管芯耦合之前。
15.根据权利要求14所述的方法，其中，将所述第一管芯耦合到所述封装衬底包括：
使用所述封装衬底的与所述第二管芯级互连件相对应的接触部作为用于对准的参考来在所述空腔内将所述第一管芯对准；以及
使用粘合剂将所述第一管芯附接在所述空腔内。
16.根据权利要求12所述的方法，其中：
在将所述第一管芯在所述空腔内耦合到所述封装衬底之前执行将所述第二管芯的所述有源侧与所述第一管芯耦合；并且
在将所述第二管芯的所述有源侧与所述第一管芯耦合之后执行将所述第二管芯的所述有源侧与所述封装衬底的所述第一侧耦合。
17.一种计算设备，包括：
电路板；以及
与所述电路板耦合的封装组件，所述封装组件包括
封装衬底，其具有设置在第一侧上的阻焊层和与所述第一侧相对设置的第二侧；
第一管芯，其安装在所述第一侧上并且具有通过一个或多个第一管芯级互连件来与所述封装衬底电耦合的有源侧；以及
第二管芯，其使用一个或多个第二管芯级互连件来与所述第一管芯的所述有源侧接合，其中，所述第二管芯的至少一部分设置在延伸穿过所述阻焊层并且延伸到所述封装衬底的设置在所述阻焊层下面的层压层中的空腔中，所述第二管芯的至少一部分设置在所述空腔的延伸到所述层压层中的部分中，以使得所述层压层的材料位于所述封装衬底的所述第二侧与所述第二管芯之间；
金属特征，其设置在所述层压层中、在所述封装衬底的所述第二侧与所述第二管芯之间，其中，所述金属特征是大体上平行于所述第二管芯的停止层并且与所述空腔直接相邻并大体上延伸跨过所述第二管芯；
其中，所述空腔的延伸到所述封装衬底中的深度能够根据所述第二管芯的厚度而变化。
18.根据权利要求17所述的计算设备，其中：
所述计算设备是移动计算设备，其包括与所述电路板耦合的天线、包括触摸屏显示器的显示器、触摸屏控制器、电池、音频编解码器、视频编解码器、功率放大器、全球定位***(GPS)设备、罗盘、盖格计数器、加速度计、陀螺仪、扬声器或者照相机中的一个或多个设备。
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