CN104576788B - Enhanced Graphene/cadmium-Te solar battery of a kind of cadmium selenide and preparation method thereof - Google Patents
Enhanced Graphene/cadmium-Te solar battery of a kind of cadmium selenide and preparation method thereof Download PDFInfo
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- CN104576788B CN104576788B CN201410827635.9A CN201410827635A CN104576788B CN 104576788 B CN104576788 B CN 104576788B CN 201410827635 A CN201410827635 A CN 201410827635A CN 104576788 B CN104576788 B CN 104576788B
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 82
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 78
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title abstract description 8
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000007747 plating Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 10
- 239000011787 zinc oxide Substances 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229960001296 zinc oxide Drugs 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 2
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 claims 11
- 239000004575 stone Substances 0.000 claims 1
- 230000009466 transformation Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 77
- 238000000151 deposition Methods 0.000 description 7
- 229910052793 cadmium Inorganic materials 0.000 description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 241001274660 Modulus Species 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001548 drop coating Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to enhanced Graphene/cadmium-Te solar battery of a kind of cadmium selenide and preparation method thereof, Graphene/the cadmium-Te solar battery has substrate, conductive film plating layer, cadmium-telluride layer, graphene layer and cadmium selenide layer from bottom to top successively, described solar cell is additionally provided with first electrode and second electrode, first electrode is arranged on conductive film plating layer, and second electrode is arranged on graphene layer.Its preparation method is as follows：It is first that conductive film plating layer, redeposited cadmium-telluride layer are deposited on substrate；Then Graphene is transferred on cadmium-telluride layer；Cadmium selenide layer is prepared on graphene layer；Electrode is made respectively on graphene layer and conductive film plating layer after last, obtains solar cell.Obtaining the Graphene/cadmium-Te solar battery with high transformation efficiency, process is simple is easy to popularization to the photoproduction doping effect that the enhanced Graphene/cadmium-Te solar battery of cadmium selenide of the present invention is introduced using cadmium selenide.
Description
Technical field
The present invention relates to a kind of novel solar battery and its manufacture method, more particularly to the enhanced Graphene of cadmium selenide/
Cadmium-Te solar battery and preparation method thereof, belongs to technical field of solar batteries.
Background technology
Solaode, as a kind of new green power, is the most important regenerative resource of sustainable development of the mankind.
At present, the share of crystal silicon solar energy battery occuping market ~ 90%.But compared with conventional power generation usage, solar cell cost of electricity-generating is still
It is higher, limit its extensive application.One of the reason for solar cell cost of electricity-generating is higher is that battery manufacture is relatively costly and photoelectricity
Transformation efficiency is relatively low.
Since finding from grapheme material, the excellent properties which is shown in electricity, optics, magnetics and terms of mechanics are such as
New, high Young's moduluss of high carrier mobility, high printing opacity etc. have caused Graphene in the hope of numerous areas application.Its
Middle Graphene opens gate in the application of energy field for Graphene in the applied research of area of solar cell.At present,
There is researcher to make solaode using the hetero-junctions that Graphene and silicon materials are formed, highest transformation efficiency reaches 14.5%,
And conventional solar cell manufacturing process is considerably simplify, manufacturing cost can be substantially reduced.For the sun
Can be for battery applications, silicon materials energy gap is narrower, while be indirect forbidden band, less than optimal basic material.Cadmium telluride
With appropriate energy gap, and direct band gap material, it is contemplated that higher transformation efficiency can be obtained.Graphene/telluride
Up to the present the research of cadmium heterojunction solar battery also do not have been reported that on this basis, the present invention proposes cadmium selenide increasing
Strong Graphene/cadmium telluride solaode, the addition of CdSe quantum dots layer or thin layer can greatly promote Graphene/tellurium
The transformation efficiency of cadmium heterojunction solar battery.
The content of the invention
It is an object of the invention to provide the enhanced graphite of cadmium selenide of a kind of phototranstormation efficiency height and preparation process is simple
Alkene/cadmium-Te solar battery and preparation method thereof.
Enhanced Graphene/the cadmium-Te solar battery of cadmium selenide of the present invention, has substrate, conductive plated film from bottom to top successively
Layer, cadmium-telluride layer, graphene layer and cadmium selenide layer, described solar cell are additionally provided with first electrode and second electrode, and first is electric
Pole is arranged on conductive film plating layer, and second electrode is arranged on graphene layer.
Described conductive film plating layer can be metal, ITO, FTO, N-shaped doping zinc-oxide or p-type doping zinc-oxide.
Graphene in described graphene layer is usually 1-10 layers.
Described cadmium selenide layer can be cadmium selenide thin film or CdSe quantum dots layer, described CdSe quantum dots diameter
For 1nm-1 μm.
Described substrate can be rigid substrate or flexible substrate.
Described first electrode and second electrode can be the compound of one or more in gold, palladium, silver, titanium, chromium and nickel
Electrode.
The method for preparing the enhanced Graphene/cadmium-Te solar battery of above-mentioned cadmium selenide, comprises the steps：
1）In clean Grown conduction film plating layer；
2）Cadmium-telluride layer is deposited on conductive film plating layer, and the face of growth first electrode is reserved in conductive plated film layer surface
Product；
3）Graphene is transferred on cadmium-telluride layer；
4）Cadmium selenide layer is made on graphene layer, and the area of growth second electrode is reserved on graphene layer surface；
5）The deposition of first electrode on conductive film plating layer, and second electrode is deposited on graphene layer.
The present invention is had an advantageous effect in that compared with prior art：Enhanced Graphene/the telluride of cadmium selenide of the present invention
Cadmium solar cell, by CdSe quantum dots layer or thin layer are added in Graphene/cadmium-Te solar battery, can play light and mix
Miscellaneous effect so that the electricity conversion of the solar cell lifts 50% or so in original basis, additionally, with conventional crystal silicon too
Positive energy battery manufacturing process is compared, and the preparation process is simple of the solar cell of the present invention, cost are relatively low, is easy to promote.
Description of the drawings：
Structural representations of the Fig. 1 for the enhanced Graphene/cadmium-Te solar battery of cadmium selenide；
Energy band schematic diagrams of the Fig. 2 for the enhanced Graphene/cadmium-Te solar battery of cadmium selenide.
Specific embodiment
The present invention will be further described with specific embodiment below in conjunction with the accompanying drawings.
With reference to Fig. 1, the enhanced Graphene/cadmium-Te solar battery of cadmium selenide of the present invention have successively from bottom to top substrate 1,
Conductive film plating layer 2, cadmium-telluride layer 3, graphene layer 4 and cadmium selenide layer 6, described solar cell are additionally provided with first electrode 5 and
Two electrodes 7, first electrode 5 are arranged on conductive film plating layer 2, and second electrode 7 is arranged on graphene layer 4.
Embodiment 1：
1）Polyimide flex substrate is cleaned up in deionized water and is dried up；
2）The indium doped tin oxide of 40 nanometer thickness of magnetron sputtering deposition is utilized on polyimide flex substrate；
3）6 microns of thick cadmium-telluride layers are deposited using physical gas phase deposition technology on indium doped tin oxide layer, and in ITO layer
The area of upper reserved growth first electrode；
4）Single-layer graphene is transferred on cadmium-telluride layer；
5）The spin coating CdSe quantum dots solution on Graphene, and the area of growth second electrode is reserved on Graphene；
The CdSe quantum dots are a diameter of 1nm-1 μm；
6）Reserve at the reserved area of Graphene and in ITO layer and coat at area silver paste and dry；Obtain cadmium selenide increasing
Strong Graphene/cadmium telluride solaode.
The band structure schematic diagram of the enhanced Graphene/cadmium-Te solar battery of cadmium selenide for obtaining as shown in Figure 2, light
The electronics produced in CdSe quantum dots and cadmium-telluride layer according in the case of is injected in Graphene, and cadmium-telluride layer collects empty
Cave, so as to produce electric potential difference, as the photodoping effect of cadmium selenide layer is remarkably improved the electricity conversion of solar cell.
Embodiment 2：
1）Glass substrate is cleaned up in deionized water and is dried up；
2）On a glass substrate using the fluorine doped tin oxide of 200 nanometer thickness of magnetron sputtering deposition；
3）8 microns of thick cadmium-telluride layers are deposited using physical gas phase deposition technology on fluorine doped tin oxide layer, and in FTO layers
The area of upper reserved growth first electrode；
4）Three layer graphenes are transferred on cadmium-telluride layer；
5）CdSe quantum dots solution is sprayed on Graphene, and the face of growth second electrode is reserved on graphene layer
Product；The CdSe quantum dots are a diameter of 1nm-1 μm；
6）Thermal evaporation gold electrode at area is reserved at the reserved area of graphene layer and on fluorine doped tin oxide layer；Obtain selenium
Enhanced Graphene/the cadmium-Te solar battery of cadmium.
Embodiment 3：
1）Ceramic substrate is cleaned up in deionized water and is dried up；
2）On a ceramic substrate using the nickel metal of 60 nanometer thickness of electron-beam evaporation；
3）5 microns of thick cadmium-telluride layers are deposited using chemical bath method on nickel metal layer, and is reserved on nickel metal layer
The area of growth first electrode；
4）10 layer graphenes are transferred on cadmium-telluride layer；
5）Cadmium selenide thin film is prepared on Graphene, and the area of growth second electrode is reserved on graphene layer；
6）Silk screen printing silver electrode at area is reserved at the reserved area of graphene layer and on nickel metal layer；Obtain selenizing
Enhanced Graphene/the cadmium-Te solar battery of cadmium.
Embodiment 4：
1）Ceramic substrate is cleaned up in deionized water and is dried；
2）On a ceramic substrate using the nickel metal of 60 nanometer thickness of electron-beam evaporation；
3）5 microns of thick cadmium-telluride layers are deposited using chemical bath method on nickel metal layer, and is reserved on nickel metal layer
The area of growth first electrode；
4）10 layer graphenes are transferred on cadmium-telluride layer；
5）The drop coating CdSe quantum dots solution on Graphene, and the face of growth second electrode is reserved on graphene layer
Product；The CdSe quantum dots are a diameter of 1nm-1 μm；
6）Reserve on Graphene at area and on nickel metal layer, reserve silk screen printing silver electrode at area；Obtain selenizing
Enhanced Graphene/the cadmium-Te solar battery of cadmium.
Embodiment 5：
1）Polyethylene terephthalate substrate is cleaned up in deionized water and dried up；
2）The Al-Doped ZnO of 100 nanometer thickness of pulsed laser deposition is utilized on polyethylene terephthalate substrate；
3）10 microns of thick cadmium-telluride layers of vapour pressure techniques of deposition are utilized on Al-Doped ZnO layer, and is mixing alumina
Change the area that growth first electrode is reserved on zinc；
4）8 layer graphenes are transferred on cadmium-telluride layer；
5）The spin coating CdSe quantum dots solution on Graphene, and the face of growth second electrode is reserved on graphene layer
Product；The CdSe quantum dots are a diameter of 1nm-1 μm；
6）Thermal evaporation palladium, silver, titanium compound electric at the reserved area of graphene layer and at the reserved area of Al-Doped ZnO layer
Pole；Obtain the enhanced Graphene/cadmium-Te solar battery of cadmium selenide.
Embodiment 6：
1）Silicon carbide substrates are cleaned up in deionized water and is dried up；
2）On silicon carbide substrates using the Al-Doped ZnO of 150 nanometer thickness of metal organic chemical vapor deposition；
3）3 microns of thick cadmium-telluride layers of vapour pressure techniques of deposition are utilized on Al-Doped ZnO layer, and is mixing alumina
Change the area that growth first electrode is reserved in zinc layers；
4）6 layer graphenes are transferred on cadmium-telluride layer；
5）Cadmium selenide thin film is prepared on Graphene, and the area of growth second electrode is reserved on graphene layer；
6）Thermal evaporation chromium, nickel combination electrode at the reserved area of graphene layer and at the reserved area of Al-Doped ZnO layer；
Obtain the enhanced Graphene/cadmium-Te solar battery of cadmium selenide.
Claims (7)
1. the enhanced Graphene/cadmium-Te solar battery of a kind of cadmium selenide, it is characterised in that have substrate from bottom to top successively（1）、
Conductive film plating layer（2）, cadmium-telluride layer（3）, graphene layer（4）And cadmium selenide layer（6）, it is electric that described solar cell is additionally provided with first
Pole（5）And second electrode（7）, first electrode（5）It is arranged on conductive film plating layer（2）On, second electrode（7）It is arranged on graphene layer
（4）On.
2. the enhanced Graphene/cadmium-Te solar battery of cadmium selenide according to claim 1, it is characterised in that described leads
Plating film layer（2）For metal, ITO, FTO, N-shaped doping zinc-oxide or p-type doping zinc-oxide.
3. the enhanced Graphene/cadmium-Te solar battery of cadmium selenide according to claim 1, it is characterised in that described stone
Black alkene layer（4）In Graphene be 1-10 layers.
4. the enhanced Graphene/cadmium-Te solar battery of cadmium selenide according to claim 1, it is characterised in that described selenium
Cadmium layer（6）For cadmium selenide thin film or CdSe quantum dots layer, described CdSe quantum dots are a diameter of 1nm-1 μm.
5. the enhanced Graphene/cadmium-Te solar battery of cadmium selenide according to claim 1, it is characterised in that described lining
Bottom（1）For rigid substrate or flexible substrate.
6. the enhanced Graphene/cadmium-Te solar battery of cadmium selenide according to claim 1, it is characterised in that described
One electrode（5）For the combination electrode of one or more in gold, palladium, silver, titanium, chromium and nickel, described second electrode（7）For gold,
The combination electrode of one or more in palladium, silver, titanium, chromium and nickel.
7. the method for preparing the enhanced Graphene/cadmium-Te solar battery of cadmium selenide as described in any one of claim 1 ~ 6, its
It is characterised by comprising the steps：
1）In clean substrate（1）Upper growth conduction film plating layer（2）；
2）In conductive film plating layer（2）Upper deposition cadmium-telluride layer（3）, and in conductive film plating layer（2）The reserved growth first electrode in surface
（5）Area；
3）Graphene is transferred to into cadmium-telluride layer（3）On；
4）In graphene layer（4）Upper making cadmium selenide layer（6）, and in graphene layer（4）The reserved growth second electrode in surface（7）'s
Area；
5）In conductive film plating layer（2）Upper deposition of first electrode（5）, and in graphene layer（4）Upper deposition second electrode（7）.
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| CN105206701B (en) * | 2015-10-13 | 2017-01-25 | 山西国惠光电科技有限公司 | Photoelectric detector directly deposited on readout circuit and preparation method of photoelectric detector |
| CN106505115B (en) * | 2016-10-17 | 2018-11-13 | 浙江大学 | Quantum dot light doped graphene/boron nitride/gallium nitride ultraviolet detector and preparation method thereof |
| CN106449858A (en) * | 2016-11-30 | 2017-02-22 | 庞倩桃 | Ultraviolet detector enhanced by zinc oxide quantum dots and method for preparing ultraviolet detector |
| CN106770466A (en) * | 2016-11-30 | 2017-05-31 | 庞倩桃 | Enhanced gas sensor of a kind of iron oxide quantum dot and preparation method thereof |
| CN106449859A (en) * | 2016-11-30 | 2017-02-22 | 庞倩桃 | Gallium arsenide quantum dot reinforced infrared detector and preparation method thereof |
| CN106546633A (en) * | 2016-12-07 | 2017-03-29 | 成都聚智工业设计有限公司 | Enhanced gas sensor of a kind of nickel oxide nanoparticle and preparation method thereof |
| CN109065647A (en) * | 2018-10-18 | 2018-12-21 | 君泰创新（北京）科技有限公司 | Solar battery and preparation method thereof |
| CN109852390B (en) * | 2019-03-15 | 2022-03-01 | 苏州科技大学 | Electrochemiluminescence material based on cadmium telluride quantum dot/redox graphene compound and preparation method and application thereof |
| CN114182891A (en) * | 2021-12-13 | 2022-03-15 | 浙江东南网架股份有限公司 | Novel daylighting top film photovoltaic roof panel and connecting device thereof |
| CN116314424A (en) * | 2022-12-21 | 2023-06-23 | 深圳大学 | Multiband ultraviolet photoelectric detector and preparation method thereof |
| CN116875958B (en) * | 2023-09-07 | 2023-12-19 | 北京理工大学 | Cr 5 Te 8 Electromagnetic wave-absorbing material of @ expanded graphite and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101299443A (en) * | 2008-06-17 | 2008-11-05 | 四川大学 | Flexible cadmium telluride thin-film solar cell structure |
| CN102097218A (en) * | 2009-12-11 | 2011-06-15 | 中国科学院物理研究所 | Quantum-dot-sensitized solar cell |
| CN102176382A (en) * | 2011-01-31 | 2011-09-07 | 中国科学院上海硅酸盐研究所 | Method for preparing grapheme-quantum dot composite film and solar battery structured by using same |
| KR20140087383A (en) * | 2012-12-28 | 2014-07-09 | 포항공과대학교 산학협력단 | Manufacturing method of quantum dot solar cell |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9147852B2 (en) * | 2009-03-06 | 2015-09-29 | University Of Florida Research Foundation, Inc. | Air stable organic-inorganic nanoparticles hybrid solar cells |
| KR101300790B1 (en) * | 2012-04-16 | 2013-08-29 | 고려대학교 산학협력단 | Cdte thin film solar cell having diffusion barriers and manufacturing method thereof |
-
2014
- 2014-12-29 CN CN201410827635.9A patent/CN104576788B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101299443A (en) * | 2008-06-17 | 2008-11-05 | 四川大学 | Flexible cadmium telluride thin-film solar cell structure |
| CN102097218A (en) * | 2009-12-11 | 2011-06-15 | 中国科学院物理研究所 | Quantum-dot-sensitized solar cell |
| CN102176382A (en) * | 2011-01-31 | 2011-09-07 | 中国科学院上海硅酸盐研究所 | Method for preparing grapheme-quantum dot composite film and solar battery structured by using same |
| KR20140087383A (en) * | 2012-12-28 | 2014-07-09 | 포항공과대학교 산학협력단 | Manufacturing method of quantum dot solar cell |
Non-Patent Citations (1)
| Title |
|---|
| A low-cost non-toxic post-growth activation step for CdTe solar cells;J.D.Major,R.E.Treharne,L.J.Phillips & K.Durose;《Nature》;20140625;第511卷;全文 * |
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