CN104037324A - Perovskite hybrid solar cell based on cadmium sulfide nanoarray - Google Patents

Perovskite hybrid solar cell based on cadmium sulfide nanoarray Download PDF

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Publication number
CN104037324A
CN104037324A CN201410289152.8A CN201410289152A CN104037324A CN 104037324 A CN104037324 A CN 104037324A CN 201410289152 A CN201410289152 A CN 201410289152A CN 104037324 A CN104037324 A CN 104037324A
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solar cell
cadmium sulfide
layer
metal electrode
perovskite
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陈红征
吴刚
顾卓韦
陈飞
傅伟飞
汪茫
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Zhejiang University ZJU
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Zhejiang University ZJU
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H10K30/352Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Abstract

The invention discloses a perovskite hybrid solar cell based on a cadmium sulfide nanoarray. The perovskite hybrid solar cell comprises a substrate, a transparent metal electrode layer, an inorganic electron transport layer, a photosensitive layer, a hole transport layer and a metal electrode layer; the transparent metal electrode layer, the inorganic electron transport layer, the photosensitive layer, the hole transport layer and the metal electrode layer are orderly arranged on the substrate from bottom to top; the inorganic electron transport layer is formed from the cadmium sulfide nanoarray; the form of the cadmium sulfide nanoarray is nanorod, nanowire or nanotube. The perovskite hybrid solar cell is characterized in that the cadmium sulfide nanoarray is taken as the electron transport layer material instead of high-temperature sintered metal oxides widely used at present, and has relatively small band gap width and is relatively wide in an absorption spectrum to sunlight; the interface area of the electron transport layer material and the material of the photosensitive layer is increased and a continuous electron transport channel is provided; compared with high temperature sintering, the perovskite hybrid solar cell has the advantages of low cost, low energy consumption and easily realizable large-area preparation.

Description

A kind of perovskite hydridization solar cell based on cadmium sulfide nano array
Technical field
The present invention relates to a kind of solar cell, specifically relate to a kind of perovskite hydridization solar cell based on cadmium sulfide nano array.
Background technology
Solar cell can be by being extensively easy to get, free of contamination solar energy changes electric energy into, is that academia and industrial circle are paid close attention to and the focus of research.Inorganic solar cell is the most ripe kind of development in current all solar cells, has relatively high electricity conversion, but high energy consumption and pollution in manufacturing process, improve on the one hand the cost of battery product, brought extra pressure also on the other hand environment and society.
And current used electric transmission layer material is confined to metal oxide, comprise TiO 2, ZnO, ZrO 2.These materials are all the inorganic semiconductors of broad-band gap, and the cut-off band edge of its absorption spectrum is all less than 400nm, can not absorb the above visible solar energy of 400nm wavelength.In addition on the one hand, above-mentioned metal oxide generally need to be through high temperature sintering to ensure crystallinity that it is good and good electron transport ability, but the technical process of high temperature sintering has deviated from the original intention of the solar cell of solution processable undoubtedly.
The solar cell of solution processable, can realize clean, efficient, large-scale mass production by roll-to-roll technology, is one of direction of solar cell future development.The research of the photoelectric conversion efficiency of representational solution processable solar cell (as dye-sensitized cell, organic (polymer) battery, hybrid inorganic-organic battery, quantum dot sensitized battery etc.) is in fast development.
In the end of the year 2012, the photoelectric conversion efficiency of all solid state organic photovoltaic cell of research report hydridization perovskite solar cell reaches 9.7%.The basic structure of hydridization perovskite solar cell is ITO (FTO) glass/TiO 2(or ZnO, ZrO 2) layer/calcium titanium ore bed/spiro-MeOTAD/ metal electrode layer.Wherein TiO 2(or ZnO, ZrO 2) layer as electron transfer layer collect calcium titanium ore bed (photosensitive layer) be subject to the free electron producing after illumination.In theory, it is more abundant that solar cell absorbs sunlight, is more conducive to the raising of its photoelectric conversion efficiency.
Summary of the invention
The problem existing as electric transmission layer material in order to solve the metal oxide of background technology, the object of this invention is to provide a kind of perovskite hydridization solar cell based on cadmium sulfide nano array, substitute and need the metal oxide of high temperature sintering as electric transmission layer material using the semi-conducting material of solution processable, in hybrid inorganic-organic solar cell, each component is all conducive to improve the photoelectric conversion efficiency of battery to the absorption of sunlight, widens the absorption spectrum of electric transmission layer material to sunlight.
The technical solution used in the present invention is:
The present invention includes substrate, transparent metal electrode layer, inorganic electronic transport layer, photosensitive layer, hole transmission layer, metal electrode layer; Be followed successively by transparent metal electrode layer, inorganic electronic transport layer, photosensitive layer, hole transmission layer and metal electrode layer from bottom to top from substrate; Inorganic electronic transport layer is cadmium sulfide nano array.
The form of described cadmium sulfide nano array is nanometer rods, nano wire or nanotube, and it is highly 50-1000nm.
The material of described substrate is glass or quartz.
The material of described transparent metal electrode layer is that tin indium oxide, fluorine are mixed tin oxide.
The chemical structure of general formula of described photosensitive layer is CH 3nH 3pbI 3-xbr xor CH 3nH 3pbI 3-xcl x, wherein 0≤x≤3.
Described hole transmission layer is by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9, and the mixture of 9'-spiral shell two fluorenes, two (trimethyl fluoride sulfonyl) lithiums and 4-tert .-butylpyridine composition, thickness is 30-500nm.
The material of described metal electrode layer is that silver, aluminium, magnesium, copper, gold, tin indium oxide or fluorine are mixed tin oxide, and thickness is 10-300nm.
The invention has the beneficial effects as follows:
Hybrid inorganic-organic solar cell of the present invention, substitutes now widely used high temperature sintering metal oxide using cadmium sulfide nano array as electric transmission layer material.
Cadmium sulfide itself has good electron transport ability, can be used as electric transmission layer material.Importantly, the cadmium sulfide that the present invention selects has narrower band gap width (2.4eV), can absorb the solar radiation below 520nm, and its absorption spectrum to sunlight is wider than TiO 2, ZnO, ZrO 2;
The use of nano array structure simultaneously, nanostructure has increased the interfacial area of electric transmission layer material and photosensitive layer storeroom on the one hand, array structure provides continuous electron propagation ducts on the other hand, the two is all conducive to battery and is subject to after illumination, free electron to the transmission of electrode be collected.
The present invention using the semi-conducting material of solution processable substitute need the metal oxide of high temperature sintering as electric transmission layer material for easy technique, reduce costs and realize large area preparation and have positive meaning.
Brief description of the drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is the absorption spectrum of CdS nano-array.
Fig. 3 is the pattern photo that can be used as in the present invention the CdS nano-array of electron transfer layer.
Fig. 4 is the current-voltage curve of perovskite hydridization solar cell of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
As shown in Figure 1, the present invention includes substrate 1, transparent metal electrode layer 2, inorganic electronic transmitting layer 3, photosensitive layer 4, hole transmission layer 5, metal electrode layer 6; Be followed successively by transparent metal electrode layer 2, inorganic electronic transmitting layer 3, photosensitive layer 4, hole transmission layer 5 and metal electrode layer 6 from bottom to top from substrate 1; Inorganic electronic transmitting layer 3 is cadmium sulfide nano array.
The form of preferred cadmium sulfide nano array can be nanometer rods, nano wire or nanotube, and it is highly 50-1000nm.
The material of preferred substrate 1 is glass or quartz.
The material of preferred transparent metal electrode layer 2 is that tin indium oxide (ITO), fluorine are mixed tin oxide (FTO).
The chemical structure of general formula of preferred photosensitive layer 4 is CH 3nH 3pbI 3-xbr xor CH 3nH 3pbI 3-xcl x, 0≤x≤3.
Preferred hole transmission layer 5 is by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9, the mixture of 9'-spiral shell two fluorenes (spiro-MeOTAD), two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) composition, thickness is 30-500nm.
The material of preferred metal electrode layer 6 is that silver, aluminium, magnesium, copper, gold, tin indium oxide or fluorine are mixed tin oxide, and thickness is 10-300nm.
Preferred 2,2', 7,7'-, tetra-[N, N-bis-(4-methoxyphenyl) amino]-9, mole proportioning of 9'-spiral shell two fluorenes (spiro-MeOTAD), two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine is 2.5:1:3.
Embodiments of the invention are as follows:
Embodiment 1:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 5 minutes the substrate of glass that is coated with tin indium oxide, with rinsed with deionized water oven dry.Adopt sol-gel process CdS nano rod growth array in substrate, array height 100nm, after ultraviolet-ozone treatment, adopts the method for solution spin coating to prepare the CH that thickness is 400nm 3nH 3pbI 3photosensitive layer, toasts 15 minutes at 100 DEG C.At CH 3nH 3pbI 3it is 30nm's that the upper method with spin coating is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9, the mixture that 9'-spiral shell two fluorenes (spiro-MeOTAD), two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, prepare by the method for vacuum evaporation the silver electrode that 10nm is thick.As can see from Figure 3, nanometer rods is grown perpendicular to ito surface, is about 400nm, diameter 100nm.As shown in Figure 2, CdS nano-array is wider than ZnO to the absorption spectrum of sunlight.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1, this battery efficiency is 6.8%, is better than the battery efficiency 3.1% taking wet method ZnO as electric transmission layer material under equal conditions.
Embodiment 2:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 5 minutes the substrate of glass that is coated with fluorine and mixes tin oxide, by rinsed with deionized water and dry.Adopt the hydro thermal method CdS nano-wire array of growing in substrate, array height 1000nm, after air heat treatment, adopts the method for single source vapour deposition to prepare the CH that thickness is 500nm 3nH 3pbBr 3photosensitive layer, toasts 5 minutes at 120 DEG C.At CH 3nH 3pbBr 3it is 500nm's that the upper method with spin coating is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes (spiro-MeOTAD), the mixture that two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, the aluminium electrode that vacuum evaporation 300nm is thick.As shown in Figure 2, CdS nano-array is wider than ZrO to the absorption spectrum of sunlight 2.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1.Battery efficiency is 5.8%, is better than under equal conditions with wet method ZrO 2for the battery efficiency (2.1%) of electric transmission layer material.
Embodiment 3:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 10 minutes the quartz substrate that is coated with fluorine and mixes tin oxide, by rinsed with deionized water and dry.Adopt the electrochemical process CdS nano-tube array of growing in substrate, array height 500nm, after air heat treatment, adopts the method for double source vapour deposition to prepare the CH that thickness is 30nm 3nH 3pbIBr 2photosensitive layer, toasts 10 minutes at 140 DEG C.At CH 3nH 3pbIBr 2it is 400nm's that the upper method with spin coating is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes (spiro-MeOTAD), the mixture that two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, prepare by the method for vacuum evaporation the magnesium electrode that 200nm is thick.As shown in Figure 2, CdS nano-array is wider than TiO to the absorption spectrum of sunlight 2.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1.Battery efficiency is 6.3%, is better than under equal conditions with wet method TiO 2for the battery efficiency (2.8%) of electric transmission layer material.
Embodiment 4:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 7 minutes the quartz substrate that is coated with tin indium oxide, with rinsed with deionized water oven dry.Adopt the electrochemical process CdS nano-tube array of growing in substrate, array height 250nm, after ultraviolet-ozone treatment, adopts the method for solution spin coating to prepare the CH that thickness is 400nm 3nH 3pbI 2br photosensitive layer, toasts 5 minutes at 110 DEG C.At CH 3nH 3pbI 2it is 300nm's that the upper method with spin coating of Br is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes (spiro-MeOTAD), the mixture that two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, the thick copper electrode of sputter 100nm.As shown in Figure 2, CdS nano-array is wider than TiO to the absorption spectrum of sunlight 2.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1.Battery efficiency is 5.3%, is better than under equal conditions with wet method TiO 2for the battery efficiency (2.3%) of electric transmission layer material.
Embodiment 5:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 7 minutes the quartz substrate that is coated with tin indium oxide, with rinsed with deionized water oven dry.Adopt the hydro thermal method CdS nano-tube array of growing in substrate, array height 50nm, after ultraviolet-ozone treatment, adopts the method for solution spin coating to prepare the CH that thickness is 200nm 3nH 3pbICl 2photosensitive layer, toasts 5 minutes at 110 DEG C.At CH 3nH 3pbICl 2it is 300nm's that the upper method with spin coating is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes (spiro-MeOTAD), the mixture that two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, prepare successively by the method for vacuum evaporation the gold electrode that 50nm is thick.As shown in Figure 2, CdS nano-array is wider than ZnO to the absorption spectrum of sunlight.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1.Battery efficiency is 6.0%, is better than the battery efficiency (3.5%) taking wet method ZnO as electric transmission layer material under equal conditions.
Embodiment 6:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 7 minutes the quartz substrate that is coated with tin indium oxide, with rinsed with deionized water oven dry.Adopt the sol-gel process CdS nano-wire array of growing in substrate, array height 800nm, after ultraviolet-ozone treatment, adopts the method for solution spin coating to prepare the CH that thickness is 400nm 3nH 3pbI 2cl photosensitive layer, toasts 8 minutes at 110 DEG C.At CH 3nH 3pbI 2it is 200nm's that the upper method with spin coating of Cl is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes (spiro-MeOTAD), the mixture that two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, the thick indium-tin oxide electrode of sputter 20nm.As shown in Figure 2, CdS nano-array is wider than ZrO to the absorption spectrum of sunlight 2.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1.Battery efficiency is 5.9%, is better than under equal conditions with wet method ZrO 2for the battery efficiency (2.8%) of electric transmission layer material.
Embodiment 7:
Use successively washing agent, isopropyl alcohol, ethanol, acetone supersound washing after 15 minutes the quartz substrate that is coated with tin indium oxide, with rinsed with deionized water oven dry.Adopt hydro thermal method CdS nano rod growth array in substrate, array height 600nm, after ultraviolet-ozone treatment, adopts the method for solution spin coating to prepare the CH that thickness is 200nm 3nH 3pbCl 3photosensitive layer, toasts 8 minutes at 110 DEG C.At CH 3nH 3pbCl 3it is 200nm's that the upper method with spin coating is prepared thickness, by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes (spiro-MeOTAD), the mixture that two (trimethyl fluoride sulfonyl) lithium (Li-TFSI) and 4-tert .-butylpyridine (TBP) mix using mole proportioning as 2.5:1:3 is as hole transmission layer.Finally, the fluorine that sputter 150nm is thick is mixed tin oxide electrode.As shown in Figure 2, CdS nano-array is wider than TiO to the absorption spectrum of sunlight 2.As mentioned above, obtain perovskite hydridization solar cell as shown in Figure 1.Battery efficiency is 4.3%, is better than under equal conditions with wet method TiO 2for the battery efficiency (1.8%) of electric transmission layer material.

Claims (7)

1. the perovskite hydridization solar cell based on cadmium sulfide nano array, is characterized in that: comprise substrate (1), transparent metal electrode layer (2), inorganic electronic transport layer (3), photosensitive layer (4), hole transmission layer (5), metal electrode layer (6); Be followed successively by transparent metal electrode layer (2), inorganic electronic transport layer (3), photosensitive layer (4), hole transmission layer (5) and metal electrode layer (6) from bottom to top from substrate (1); Inorganic electronic transport layer (3) is cadmium sulfide nano array.
2. a kind of perovskite hydridization solar cell based on cadmium sulfide nano array according to claim 1, is characterized in that: the form of described cadmium sulfide nano array is nanometer rods, nano wire or nanotube, and it is highly 50-1000nm.
3. a kind of perovskite hydridization solar cell based on cadmium sulfide nano array according to claim 1, is characterized in that: the material of described substrate (1) is glass or quartz.
4. a kind of perovskite hydridization solar cell based on cadmium sulfide nano array according to claim 1, is characterized in that: the material of described transparent metal electrode layer (2) is that tin indium oxide, fluorine are mixed tin oxide.
5. a kind of perovskite hydridization solar cell based on cadmium sulfide nano array according to claim 1, is characterized in that: the chemical structure of general formula of described photosensitive layer (4) is CH 3nH 3pbI 3 xbr xor CH 3nH 3pbI 3 xcl x, wherein 0≤x≤3.
6. a kind of perovskite hydridization solar cell based on cadmium sulfide nano array according to claim 1, it is characterized in that: described hole transmission layer (5) is by 2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9, the mixture of 9'-spiral shell two fluorenes, two (trimethyl fluoride sulfonyl) lithiums and 4-tert .-butylpyridine composition, thickness is 30-500nm.
7. a kind of perovskite hydridization solar cell based on cadmium sulfide nano array according to claim 1, it is characterized in that: the material of described metal electrode layer (6) is mixed tin oxide for silver, aluminium, magnesium, copper, gold, tin indium oxide or fluorine, and thickness is 10-300nm.
CN201410289152.8A 2014-06-24 2014-06-24 Perovskite hybrid solar cell based on cadmium sulfide nanoarray Pending CN104037324A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105047826A (en) * 2015-08-12 2015-11-11 武汉鑫神光电科技有限公司 Perovskite solar cell with cadmium sulfide-doped perovskite layer and preparation method of perovskite solar cell
CN106025072A (en) * 2016-06-01 2016-10-12 中物院成都科学技术发展中心 Zn<1-x>Cd<x>S solid solution thin film based perovskite solar cell and preparation method therefor
CN106848068A (en) * 2017-02-21 2017-06-13 华侨大学 A kind of preparation method of low temperature perovskite solar cell
CN107039547A (en) * 2017-04-07 2017-08-11 华中科技大学 Perovskite solar cell ultracapacitor integrated device and preparation method thereof
CN107819053A (en) * 2017-11-06 2018-03-20 南京工业大学 Preparation method applied to the printable CdS nanocrystal film of solar cell

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070111368A1 (en) * 2005-11-16 2007-05-17 Sharp Laboratories Of America, Inc. Photovoltaic structure with a conductive nanowire array electrode
WO2008060697A2 (en) * 2006-05-23 2008-05-22 The University Of Akron Dendron-tethered and templated quantum dots on carbon nanotubes
WO2011005462A1 (en) * 2009-06-21 2011-01-13 The Regents Of The University Of California Nanostructure, photovoltaic device, and method of fabrication thereof
CN103700769A (en) * 2013-12-03 2014-04-02 常州大学 Organic/inorganic hybridized perovskite solar battery and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070111368A1 (en) * 2005-11-16 2007-05-17 Sharp Laboratories Of America, Inc. Photovoltaic structure with a conductive nanowire array electrode
WO2008060697A2 (en) * 2006-05-23 2008-05-22 The University Of Akron Dendron-tethered and templated quantum dots on carbon nanotubes
WO2011005462A1 (en) * 2009-06-21 2011-01-13 The Regents Of The University Of California Nanostructure, photovoltaic device, and method of fabrication thereof
CN103700769A (en) * 2013-12-03 2014-04-02 常州大学 Organic/inorganic hybridized perovskite solar battery and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
XIAOXIA JIANG: "template-free synthesis of vertically aligned CdS nanorods and its application in hybrid solar cells", 《SOLAR ENERGY MATERIALS & SOLAR CELLS》 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105047826A (en) * 2015-08-12 2015-11-11 武汉鑫神光电科技有限公司 Perovskite solar cell with cadmium sulfide-doped perovskite layer and preparation method of perovskite solar cell
CN105047826B (en) * 2015-08-12 2017-12-15 武汉鑫神光电科技有限公司 A kind of perovskite solar cell that cadmium sulfide is mixed in calcium titanium ore bed and preparation method thereof
CN106025072A (en) * 2016-06-01 2016-10-12 中物院成都科学技术发展中心 Zn<1-x>Cd<x>S solid solution thin film based perovskite solar cell and preparation method therefor
CN106025072B (en) * 2016-06-01 2018-03-20 中物院成都科学技术发展中心 Based on Zn1‑xCdxPerovskite solar cell of S solid solution films and preparation method thereof
CN106848068A (en) * 2017-02-21 2017-06-13 华侨大学 A kind of preparation method of low temperature perovskite solar cell
CN107039547A (en) * 2017-04-07 2017-08-11 华中科技大学 Perovskite solar cell ultracapacitor integrated device and preparation method thereof
CN107819053A (en) * 2017-11-06 2018-03-20 南京工业大学 Preparation method applied to the printable CdS nanocrystal film of solar cell
CN107819053B (en) * 2017-11-06 2019-06-14 南京工业大学 The preparation method of printable CdS nanocrystal film applied to solar cell

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