CN102074590B - Back-contact electrode in cadmium telluride diaphragm solar battery structure and preparation method - Google Patents

Back-contact electrode in cadmium telluride diaphragm solar battery structure and preparation method Download PDF

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CN102074590B
CN102074590B CN201010541026.9A CN201010541026A CN102074590B CN 102074590 B CN102074590 B CN 102074590B CN 201010541026 A CN201010541026 A CN 201010541026A CN 102074590 B CN102074590 B CN 102074590B
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graphene
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battery
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CN102074590A (en
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黄富强
梁军
李德增
林天全
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Shanghai Institute of Ceramics of CAS
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Shanghai Institute of Ceramics of CAS
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Abstract

The present invention relates to the back-contact electrode in a kind of CdTe thin film solar battery structure, comprise transparent conducting glass layer, Window layer, light-absorption layer, barrier layer successively, it is characterized in that preparing graphene film layer as back-contact electrode at the resistance intercalation back side.The thickness of described graphene layer is 0.1 μm of-1mm.Described back-contact electrode preparation is the preparation comprising conductive glass layer, Window layer, light-absorption layer, barrier layer successively, it is characterized in that in Graphene, add adhesive prepares Graphene slurry, then be prepared into graphene layer by Graphene slurry the invention has the advantages that, technique that manufacture method adopts can with existing CdTe battery process compatible, for solving low cost, high-performance, large-scale CdTe battery provide a kind of new approach.

Description

Back-contact electrode in cadmium telluride diaphragm solar battery structure and preparation method
Technical field
The present invention relates to the back-contact electrode in a kind of cadmium telluride diaphragm solar battery structure and preparation method, relate to a kind of Graphene or rather and be applied to cadmium telluride cells contact back electrode and preparation method, belong to microelectronics technology.
Background technology
21st century is entered the mankind, environmental pollution and energy shortage more and more govern the sustainable development of society, the renewable energy technologies such as solar energy represent the developing direction of clean energy resource, solar energy power generating as most sustainable development desired characteristics will enter mankind's energy resource structure and becomes the important component part of basic energy resource, and China also it can be used as the important foundation condition of the novel society of creating policy sustainable development to list in national medium & long term sci-tech development program.From wide significance, the tellurian energy all comes from the sun after all.Except nuclear energy and geothermal energy etc. can think the energy that stores to get off in earth forming process, other all energy all comes from the huge energy that thermonuclear reaction that the sun occurs discharges, and comprises regenerative resource and fossil energy.The total radiation energy that the sun is launched is approximately 3.75 × 10 26w, consider earth atmosphere reflection and absorb after, the solar energy that in 1 year, earth surface accepts is up to 1.05 × 10 18kWh is approximately the beginning of this century 10,000 times of whole world primary energy total amount consumed.The sun brings light to the mankind, also brings inexhaustible, nexhaustible natural energy resources to the mankind, makes us see following hope.
CdTe solar cell is that a new generation is efficient, low cost, can the thin film solar cell of large-scale industrial production, be described as one of the most promising solar cell.The thickness of CdTe solar cell absorbed layer is only 1% of current commercial silicon solar cell, and materials are considerably less, and cost is very low; And its photoelectric conversion efficiency is relatively high in thin film type solar battery.NREL National Laboratory of the U.S. has the world record of such battery, under the simulated solar illumination of AM1.5, has the photoelectric conversion efficiency of 16.5%, though Distance Theory efficiency 28% still has very large space.CdTe has the advantage of the following aspects inherence as the photoelectric conversion material of solar cell:
(1) CdTe is an II-VI group compound semiconductor, and energy gap is 1.45eV, and therefore it is in optimal solar energy wave band place to the response of spectrum.The absorption coefficient of CdTe at visible-range up to 10 5cm -1, the photon of 99% can be absorbed in the absorbed layer of 1-2 micron thickness, and therefore, prepare solar cell with this material, desired thickness is at 2 microns in theory, and material consumption is few.
(2) CdTe battery is compared with other compound batteries, as compared with CIGS (Copper Indium Gallium Selenide) compound batteries, its maximum advantage of CdTe battery is that phasor is extremely simple, can be easy to prepare single-phase CdTe crystal film, can prepare with multiple method for manufacturing thin film.And CIGS battery has kind more than 20 to exist mutually, therefore single to preparation chalcopyrite phase, proposes stern challenge, and it requires the techniques such as accurately harsh on-line checkingi and subsequent heat treatment, and this directly results in this battery large-scale production and makes slow progress.CdTe changes peak efficiency into 16.5% at current laboratory, is only second to CIGS battery conversion efficiency (20.3%).And CdTe Phase Diagram of Materials is extremely simple, prepare window wider, CdTe large-scale commercial is produced and succeeds.
(3) CdTe does not have Staebler-Wronski effect, and illumination can improve the conversion efficiency of solar cell, therefore the long working life of such solar cell.Existing result shows, the life-span of CdTe battery is longer than monocrystalline silicon battery (being about 40 years).CdTe solar cell other solar cells all many in temperature stability, chemical stability, capability of resistance to radiation, low light level performance etc. are difficult to be equal to, and are desirable space power systems.
Graphene (graphene) is that what to be made up of carbon atom take phenyl ring as the monoatomic layer material with bi-dimensional cellular shape structure of elementary cell.It can be warped into the fullerene (fullerene) of zero dimension (0D), be rolled into the carbon nano-tube (carbonnanotube/CNT) of one dimension (1D) or be stacked to the graphite (graphite) of three-dimensional (3D), therefore Graphene is the elementary cell forming other graphite materials.Why Graphene can cause rapidly the extensive attention of countries in the world scientist to be enriched and the physical phenomenon of novelty because it has not only contained, there is important theoretical research be worth, and the structure of its uniqueness and excellent performance likely make it obtain great practical application in every field, for the economy in future, social development provide new strong growth point.The most peculiar part of Graphene is that it has unique electronic structure and electrical properties.The valence band (pi-electron) of Graphene and conduction band (π *electronics) intersect at Fermi level place (K and K ' point), to be energy gap be zero semiconductor, near Fermi level, its charge carrier presents linear dispersion relation.And the movement velocity of electronics reaches 1/300 of the light velocity in Graphene, its electronic behavior needs to describe with the Dirac equation in relativistic quantum mechanics, and the effective mass of electronics is zero.Therefore, Graphene becomes the unique model system described without quality dirac fermion (masslessDiracfermions) in condensed state physics so far, and this phenomenon result in the electrical properties of many novelties.Such as, Graphene has 10 times of high carrier mobilities to commercial silicon chip and (reaches 15000cm 2v -1s -1), and charge carrier shows the ballistic transport characteristic of obvious ambipolar field performance characteristic and room temperature submicron-scale, and high and continuously adjustable carrier concentration (can reach 10 13cm -2); The intensity of Graphene can reach 130GPa, is more than 100 times of steel.The work function of Graphene can be greater than 5eV, is suitable as the contact electrode of p-type, and these are characterized as Graphene and are applied to CdTe back electrode and lay a good foundation.
The work function of CdTe is about 5.5eV, and so high work function makes can not form ohmic contact between CdTe and the existing material as back electrode, there is a schottky junction, and the existence of this knot has a strong impact on charge carrier conduction.The present metal for CdTe back electrode is generally the noble metal of high work function, can adopt in the case of laboratory research, if will be applied to the cost that industrial production must consider its costliness.The application intends adopting high work function, the Graphene of high conductivity and low cost as the back-contact electrode of CdTe battery to overcome the deficiencies in the prior art.
Summary of the invention
The object of the present invention is to provide the back-contact electrode in a kind of cadmium telluride (CdTe) film solar battery structure and preparation method, the present invention utilizes can reach 10 13cm -2high and continuously adjustable carrier concentration, adopts low cost to smear or printing technology, preparation CdTe battery back electrode.
1. the structure (as Fig. 1) of the CdTe thin film solar cell of the present invention's proposition is by conductive glass layer | resistive formation | and Window layer | light-absorption layer | barrier layer | Graphene back-contact electrode battery structure, is characterized in that,
1) conductive glass layer
Conducting Glass is tin-doped indium oxide (AZO), Al-Doped ZnO or fluorine doped tin oxide glass.Thickness 1mm ~ the 3mm of glass substrate, above the thickness of conductive layer be 300nm ~ 3 μm.
2) resistive formation
Resistive formation is indium oxide, aluminium oxide or tin oxide, zinc oxide; Thickness is 20 ~ 100nm.Also can select without resistive formation.
3) window (cadmium sulfide layer)
Cadmium sulfide layer, thickness is 20nm ~ 300 μm.
4) light-absorption layer (cadmium-telluride layer)
Thickness is in 600nm ~ 10 μm.
5) barrier layer
Zinc telluridse/mix copper zinc telluridse composite bed, its thickness is at 5nm ~ 500nm.This layer also can with telluride mercury/mix copper telluride mercury composite bed, and thickness is 5nm ~ 500nm.
6) Graphene back-contact electrode
The present invention relates to Graphene, can be bought by market and mode that oneself is prepared obtains.In Graphene, add adhesive prepare Graphene slurry, then starched by Graphene and be prepared into graphene film layer,
1) adopt the solute of Kynoar (PVDF), 1-Methyl-2-Pyrrolidone (NMP) is solvent, by 0.01g/ml to 1g/ml proportional arrangement adhesive.
2) by 1) mixed liquor through stirring fully mixing.
3) Graphene is inserted 2) adhesive in, the addition of Graphene is 0.01g/ml to 100g/ml, through fully stirring, obtains thick Graphene slurry.
4) Graphene will prepared, obtains graphene film layer by printing, spin coating or czochralski method at the back side, CdTe battery barrier layer, can as battery terminal contact back electrode.The thickness of back-contact electrode is 0.1 μm ~ 1mm.
5) according to need, step 3 prepare Graphene slurry in by 1% ~ 40%wt ratio (with Graphene slurry for benchmark) by Cu powder or mix copper telluride mercury powder be mixed into Graphene starch, fully stir.
2. the present invention includes the growth of each function film of each battery, burn into annealing in process and printing, spin coating and lift and prepare graphene film, be characterised in that:
1) conductive layer preparation on clear glass: first ultrasonic glass cleaning substrate, first use carbon tetrachloride (or cleaning agent or omit this step), then according to this through acetone, absolute ethyl alcohol, last washed with de-ionized water, nitrogen dries up; Then depositing conducting layer;
2) resistive formation preparation: adopt physical sputtering method (sputter), vapour deposition method or CVD prepare resistive formation; Can select without resistive formation;
3) Window layer preparation: adopt chemical thought (CBD), physical sputtering method (sputter), vapour deposition method or CVD prepare CdS layer;
4) light-absorption layer preparation: adopt nearly vacuum sublimation, electrochemical deposition, physical sputtering or CVD to prepare CdTe layer;
5) extinction district heat treatment: adopt caddy to be applied in CdTe flash annealing, or at CdCl 2anneal under atmosphere;
6) barrier layer preparation: adopt sputter, evaporation or CVD prepare zinc telluridse and mix copper zinc telluridse composite bed or telluride mercury and mix copper telluride mercury composite bed, anneal under nitrogen or hydrogen atmosphere; Can select without barrier layer.
7) back electrode preparation: adopt printing, the mode of spin coating and lift prepares battery back contacts Graphene electrodes.If at transparent conducting glass conductive layer, in the preparation of Graphene slurry, need mixed C u or HgTe:Cu powder.
Accompanying drawing explanation
The structural representation of Fig. 1 CdTe battery;
Electro-conductive glass prepared by Fig. 2;
The SEM photo of cadmium sulphide membrane prepared by Fig. 3;
Graphene back electrode prepared by Fig. 4; A) 2,000 ×; B) 10,000 ×
Fig. 5 cadmium telluride cells (Graphene back electrode) transformation efficiency, (a) prints Graphene back electrode; (b) spin coating Graphene back electrode; (c) lift Graphene back electrode.
Embodiment
Introduce embodiments of the invention below, to increase understanding of the present invention further, with reference to CdTe solar cell schematic diagram, accompanying drawing 1, contrast accompanying drawing 2, accompanying drawing 3 and accompanying drawing 4 describe preparation method of the present invention and optimal way thereof in detail, and embodiment the results are shown in accompanying drawing 5.But the present invention is limited to embodiment absolutely not.
Embodiment 1:
Prepared by transparency conducting layer: adopt sputtering method to prepare AZO electro-conductive glass, glass substrate temperature is room temperature 600 DEG C, carrier gas is argon gas or argon hydrogen gaseous mixture (wherein hydrogen is less than 10%), reaction pressure is 0.1Pa, gas flow 5sccm (standardcubiccentimeterperminute, standard cubic centimeters per minute), power is 50W, range is 5cm, wherein N 2as carrier gas.Deposit thickness is about 600nm.Obtain the transparent conducting glass (Fig. 2) being with conductive layer.
Prepared by Window layer: adopt sputtering method preparation, Conducting Glass temperature is room temperature, and reaction pressure is 0.1Pa, and power is 100W, and target is CdS target, wherein N 2as carrier gas, gas flow 5sccm.Deposit thickness is about 100nm (Fig. 3).
Prepared by light-absorption layer: adopt sputtering method preparation, above-mentioned underlayer temperature is 300 DEG C, and reaction pressure is 0.1Pa, and power is 100W, and argon gas or argon oxygen gas mixture are as carrier gas, and gas flow 5sccm, target is CdTe target, and deposit thickness is about 5 ~ 7 μm.Material object is shown in accompanying drawing 2
Prepared by barrier layer: adopt sputtering method to prepare ZnTe/ZnTe:Cu composite bed, above-mentioned underlayer temperature is 300 DEG C, reaction pressure is 0.1Pa, power is 100W, argon gas or argon oxygen gas mixture are as carrier gas, gas flow 5sccm, target is ZnTe target and ZnTe:Cu, and deposit thickness is respectively 20nm and 70nm.
Prepared by back-contact electrode: pour Kynoar (PVDF) solvent into container, and adopt magnetic agitation, be heated to 80 DEG C, adding 1-Methyl-2-Pyrrolidone (NMP) solvent is adhesive, and concentration is about 20g/L.Through stirring fully mixing.Average mark adds Graphene four times, and every minor tick 28-32 minute, fully stirs, and obtains thick Graphene slurry.Battery is placed on printing machine, fixing.After graphite slurry fully stirs, be poured on printing screen plate, adopt mode of printing to prepare battery back electrode.Be placed in 150 ° of c oven for drying, complete battery unit structure.The photo of the Graphene back-contact electrode of preparation is as shown in Fig. 4 (a) He (b), and its transformation efficiency is as shown in Fig. 5 (a), and transformation efficiency is 7.41%.
Embodiment 2:
Prepared by transparency conducting layer: adopt LPCVD to deposit FTO electro-conductive glass, underlayer temperature is 400 DEG C, and reaction pressure is 3kPa, and precursors is Tetramethyltin (TMT), Bromotrifluoromethane (CBrF3) gas provides F source, passes into O simultaneously 2and N 2, wherein N 2as carrier gas.Deposit thickness is about 500nm.
Prepared by Window layer: adopt sputtering method preparation, Conducting Glass temperature is room temperature, and reaction pressure is 0.1Pa, and power is 100W, and target is CdS target, wherein N 2as carrier gas, gas flow 5sccm.Deposit thickness is about 100nm.。
Prepared by light-absorption layer: adopt sputtering method preparation, above-mentioned underlayer temperature is 300 DEG C, and reaction pressure is 0.1Pa, and power is 100W, and argon gas or argon oxygen gas mixture are as carrier gas, and gas flow 5sccm, target is CdTe target, and deposit thickness is about 5 ~ 7 μm.
Prepared by barrier layer: adopt sputtering method to prepare ZnTe and ZnTe:Cu composite bed, underlayer temperature is 300 DEG C, and reaction pressure is 0.1Pa, power is 100W, argon gas or argon oxygen gas mixture as carrier gas, gas flow 5sccm, target is ZnTe target and ZnTe:Cu, and deposit thickness is respectively 20nm and 70nm.
Prepared by back-contact electrode: pour Kynoar (PVDF) solvent into container, and adopt magnetic agitation, be heated to 80 DEG C, adding 1-Methyl-2-Pyrrolidone (NMP) solvent is adhesive, and concentration is about 20g/L.Through stirring fully mixing.Average mark adds Graphene four times, and every minor tick 28-32 minute, fully stirs, and obtains thick Graphene slurry.Battery is placed on printing machine, fixing.After graphite slurry fully stirs, be poured on printing screen plate, adopt mode of printing to prepare battery back electrode.Be placed in 150 ° of c oven for drying, complete battery unit structure.
All the other are with embodiment 1.
Embodiment 3:
Prepared by transparency conducting layer: adopt LPCVD to deposit FTO electro-conductive glass, underlayer temperature is 400 DEG C, and reaction pressure is 3kPa, and precursors is Tetramethyltin (TMT), Bromotrifluoromethane (CBrF3) gas provides F source, passes into O simultaneously 2and N 2, wherein N 2as carrier gas.Deposit thickness is about 500nm.
Prepared by Window layer: adopt chemical bath legal system for CdS layer, reactant is ammonium acetate, cadmium acetate, ammoniacal liquor and thiocarbamide.First add deionized water by airtight container, be heated to 80 DEG C, add cadmium acetate, ammonium acetate, ammoniacal liquor, deposit thickness is about 100nm.
Prepared by light-absorption layer: adopt sputtering method preparation, above-mentioned underlayer temperature is 300 DEG C, and reaction pressure is 0.1Pa, and power is 100W, and argon gas or argon oxygen gas mixture are as carrier gas, and gas flow 5sccm, target is CdTe target, and deposit thickness is about 5 ~ 7 μm.
Prepared by barrier layer: adopt sputtering method to prepare ZnTe/ZnTe:Cu composite bed, above-mentioned underlayer temperature is 300 DEG C, reaction pressure is 0.1Pa, power is 100W, argon gas or argon oxygen gas mixture are as carrier gas, gas flow 5sccm, target is ZnTe target and ZnTe:Cu, and deposit thickness is respectively 20nm and 70nm.
Prepared by back-contact electrode: pour Kynoar (PVDF) solvent into container, and adopt magnetic agitation, be heated to 80 DEG C, adding 1-Methyl-2-Pyrrolidone (NMP) solvent is adhesive, and concentration is about 20g/L.Through stirring fully mixing.Siccative average mark adds Graphene four times, and every minor tick 28-32 minute, fully stirs, and obtains thick Graphene slurry.Battery is placed on printing machine, fixing.After graphite slurry fully stirs, be poured on printing screen plate, adopt mode of printing to prepare battery back electrode.Be placed in 150 ° of c oven for drying, complete battery unit structure.All the other are with embodiment 1.
Embodiment 4
Prepared by transparency conducting layer: adopt LPCVD to deposit FTO electro-conductive glass, underlayer temperature is 400 DEG C, and reaction pressure is 3kPa, and precursors is Tetramethyltin (TMT), Bromotrifluoromethane (CBrF3) gas provides F source, passes into O simultaneously 2and N 2, wherein N 2as carrier gas.Deposit thickness is about 500nm.
Prepared by Window layer: adopt chemical bath legal system for CdS layer, reactant is ammonium acetate, cadmium acetate, ammoniacal liquor and thiocarbamide.First add deionized water by airtight container, be heated to 80 DEG C, add cadmium acetate, ammonium acetate, ammoniacal liquor, deposit thickness is about 100nm.
Prepared by light-absorption layer: nearly vacuum sublimation prepares CdTe thin film, and underlayer temperature is 500 DEG C, and argon gas or argon oxygen gas mixture are as carrier gas, and reaction pressure 1kPa, evaporation source is CdTe, and deposit thickness is about 7 μm.
Prepared by barrier layer: adopt sputtering method to prepare ZnTe/ZnTe:Cu composite bed, above-mentioned underlayer temperature is 300 DEG C, reaction pressure is 0.1Pa, power is 100W, argon gas or argon oxygen gas mixture are as carrier gas, gas flow 5sccm, target is ZnTe target and ZnTe:Cu, and deposit thickness is respectively 20nm and 70nm.
Prepared by back-contact electrode: pour Kynoar (PVDF) solute into container, and adopt magnetic agitation, be heated to 80 DEG C, adding 1-Methyl-2-Pyrrolidone (NMP) solvent is adhesive, and concentration is about 20g/L.Through stirring fully mixing.Average mark adds Graphene four times, and every minor tick 28-32 minute, fully stirs, and obtains thick Graphene slurry.Battery is placed on printing machine, fixing.After Graphene slurry fully stirs, be poured on printing screen plate, adopt mode of printing to prepare battery back electrode.Be placed in 150 ° of c oven for drying, complete battery unit structure.All the other are with embodiment 1.
Embodiment 5
Prepared by transparency conducting layer: adopt LPCVD to deposit FTO electro-conductive glass, underlayer temperature is 400 DEG C, and reaction pressure is 3kPa, and precursors is Tetramethyltin (TMT), Bromotrifluoromethane (CBrF3) gas provides F source, passes into O simultaneously 2and N 2, wherein N 2as carrier gas.Deposit thickness is about 500nm.
Prepared by Window layer: adopt chemical bath legal system for CdS layer, reactant is ammonium acetate, cadmium acetate, ammoniacal liquor and thiocarbamide.First add deionized water by airtight container, be heated to 80 DEG C, add cadmium acetate, ammonium acetate, ammoniacal liquor, deposit thickness is about 100nm.
Prepared by light-absorption layer: nearly vacuum sublimation prepares CdTe thin film, and underlayer temperature is 500 DEG C, and argon gas or argon oxygen gas mixture are as carrier gas, and reaction pressure 1kPa, evaporation source is CdTe, and deposit thickness is about 7 μm.
Prepared by back-contact electrode: pour Kynoar (PVDF) solvent into container, and adopt magnetic agitation, be heated to 80 DEG C, adding 1-Methyl-2-Pyrrolidone (NMP) solvent is adhesive, and concentration is about 20g/L.Through stirring fully mixing.Siccative average mark adds Graphene four times, and every minor tick 28-32 minute, fully stirs, and obtains thick Graphene slurry.The Cu powder of mixing 6%wt, fully stirs.Battery is placed on printing machine, fixing.After graphite slurry fully stirs, be poured on printing screen plate, adopt mode of printing to prepare battery back electrode.Be placed in 150 DEG C of oven for drying, complete battery unit structure.All the other are with embodiment 1.
Embodiment 6
Prepared by transparency conducting layer: adopt LPCVD to deposit FTO electro-conductive glass, underlayer temperature is 400 DEG C, and reaction pressure is 3kPa, and precursors is Tetramethyltin (TMT), Bromotrifluoromethane (CBrF3) gas provides F source, passes into O simultaneously 2and N 2, wherein N 2as carrier gas.Deposit thickness is about 500nm.
Prepared by Window layer: adopt chemical bath legal system for CdS layer, reactant is ammonium acetate, cadmium acetate, ammoniacal liquor and thiocarbamide.First add deionized water by airtight container, be heated to 80 DEG C, add cadmium acetate, ammonium acetate, ammoniacal liquor, deposit thickness is about 100nm.
Prepared by light-absorption layer: nearly vacuum sublimation prepares CdTe thin film, and underlayer temperature is 500 DEG C, and argon gas or argon oxygen gas mixture are as carrier gas, and reaction pressure 1kPa, evaporation source is CdTe, and deposit thickness is about 7 μm.
Prepared by barrier layer: adopt sputtering method to prepare ZnTe/ZnTe:Cu composite bed, above-mentioned underlayer temperature is 300 DEG C, reaction pressure is 0.1Pa, power is 100W, argon gas or argon oxygen gas mixture are as carrier gas, gas flow 5sccm, target is ZnTe target and ZnTe:Cu, and deposit thickness is respectively 20nm and 70nm.
Prepared by back-contact electrode: pour Kynoar (PVDF) solvent into container, and adopt magnetic agitation, be heated to 80 DEG C, adding 1-Methyl-2-Pyrrolidone (NMP) solvent is adhesive, and concentration is about 20g/L.Through stirring fully mixing.Average mark adds Graphene four times, and every minor tick 28-32 minute, fully stirs, and obtain thick Graphene slurry, be placed in by battery on spin coater, vacuum suction is fixed.After fully being stirred by Graphene slurry, be poured on cell backside, employing rotation parameter is 1000rpm/5s; Battery back electrode is prepared in the spin coating of 2000rpm/30s two step.Be placed in 150 DEG C of oven for drying, complete battery unit structure.Transformation efficiency is as shown in Fig. 5 (b), and transformation efficiency reaches 6.5%.All the other are with embodiment 1.
Embodiment 7
Prepared by transparency conducting layer: adopt LPCVD to deposit FTO electro-conductive glass, underlayer temperature is 400 DEG C, and reaction pressure is 3kPa, and precursors is Tetramethyltin (TMT), Bromotrifluoromethane (CBrF3) gas provides F source, passes into O simultaneously 2and N 2, wherein N 2as carrier gas.Deposit thickness is about 500nm.
Prepared by Window layer: adopt chemical bath legal system for CdS layer, reactant is ammonium acetate, cadmium acetate, ammoniacal liquor and thiocarbamide.First add deionized water by airtight container, be heated to 80 DEG C, add cadmium acetate, ammonium acetate, ammoniacal liquor, deposit thickness is about 100nm.
Prepared by light-absorption layer: nearly vacuum sublimation prepares CdTe thin film, and underlayer temperature is 500 DEG C, and argon gas or argon oxygen gas mixture are as carrier gas, and reaction pressure 1kPa, evaporation source is CdTe, and deposit thickness is about 7 μm.
Prepared by back-contact electrode: pour Kynoar (PVDF) solvent into container, and adopt magnetic agitation, be heated to 80 DEG C, adding 1-Methyl-2-Pyrrolidone (NMP) solvent is adhesive, and concentration is about 20g/L.Through stirring fully mixing.Siccative average mark adds Graphene four times, and every minor tick 28-32 minute, fully stirs, and obtains thick Graphene slurry.The Cu powder of mixing 6%wt, fully stirs.Be placed in by battery on spin coater, vacuum suction is fixed.After fully being stirred by graphite slurry, be poured on cell backside, employing rotation parameter is 1000rpm/5s; Battery back electrode is prepared in the spin coating of 2000rpm/30s two step.Be placed in 150 ° of c oven for drying, complete battery unit structure.Transformation efficiency as shown in Fig. 5 (b), transformation efficiency be 6.5% all the other with embodiment 1.
Embodiment 8
Prepared by transparency conducting layer: adopt LPCVD to deposit FTO electro-conductive glass, underlayer temperature is 400 DEG C, and reaction pressure is 3kPa, and precursors is Tetramethyltin (TMT), Bromotrifluoromethane (CBrF3) gas provides F source, passes into O simultaneously 2and N 2, wherein N 2as carrier gas.Deposit thickness is about 500nm.
Prepared by Window layer: adopt chemical bath legal system for CdS layer, reactant is ammonium acetate, cadmium acetate, ammoniacal liquor and thiocarbamide.First add deionized water by airtight container, be heated to 80 DEG C, add cadmium acetate, ammonium acetate, ammoniacal liquor, deposit thickness is about 100nm.
Prepared by light-absorption layer: nearly vacuum sublimation prepares CdTe thin film, and underlayer temperature is 500 DEG C, and argon gas or argon oxygen gas mixture are as carrier gas, and reaction pressure 1kPa, evaporation source is CdTe, and deposit thickness is about 7 μm.
Prepared by barrier layer: adopt sputtering method to prepare ZnTe/ZnTe:Cu composite bed, above-mentioned underlayer temperature is 300 DEG C, reaction pressure is 0.1Pa, power is 100W, argon gas or argon oxygen gas mixture are as carrier gas, gas flow 5sccm, target is ZnTe target and ZnTe:Cu, and deposit thickness is respectively 20nm and 70nm.
Prepared by back-contact electrode: pour Kynoar (PVDF) solvent into container, and adopt magnetic agitation, be heated to 80 DEG C, adding 1-Methyl-2-Pyrrolidone (NMP) solvent is adhesive, and concentration is about 20g/L.Through stirring fully mixing.Siccative average mark adds Graphene four times, and every minor tick 28-32 minute, fully stirs, and obtains thick Graphene slurry.After fully being stirred by Graphene slurry, battery front side is pasted the protection of blue film, immerse in Graphene slurry, with the lift of 2mm/s speed, take off and be placed on 150 ° of c oven for drying, peel off the blue film in front, complete battery unit structure.Transformation efficiency is as shown in Fig. 5 (c), and transformation efficiency is 7.86%.All the other are with embodiment 1.
Embodiment 9
Prepared by transparent conducting glass layer: adopt LPCVD to deposit FTO electro-conductive glass, underlayer temperature is 400 DEG C, and reaction pressure is 3kPa, and precursors is Tetramethyltin (TMT), Bromotrifluoromethane (CBrF3) gas provides F source, passes into O simultaneously 2and N 2, wherein N 2as carrier gas.Deposit thickness is about 500nm.
Prepared by Window layer: adopt chemical bath legal system for CdS layer, reactant is ammonium acetate, cadmium acetate, ammoniacal liquor and thiocarbamide.First add deionized water by airtight container, be heated to 80 DEG C, add cadmium acetate, ammonium acetate, ammoniacal liquor, deposit thickness is about 100nm.
Prepared by light-absorption layer: nearly vacuum sublimation prepares CdTe thin film, and underlayer temperature is 500 DEG C, and argon gas or argon oxygen gas mixture are as carrier gas, and reaction pressure 1kPa, evaporation source is CdTe, and deposit thickness is about 7 μm.
Prepared by barrier layer: adopt sputtering method to prepare ZnTe/ZnTe:Cu composite bed, above-mentioned underlayer temperature is 300 DEG C, reaction pressure is 0.1Pa, power is 100W, argon gas or argon oxygen gas mixture are as carrier gas, gas flow 5sccm, target is ZnTe target and ZnTe:Cu, and deposit thickness is respectively 20nm and 70nm.
Prepared by back-contact electrode: pour Kynoar (PVDF) solvent into container, and adopt magnetic agitation, be heated to 80 DEG C, adding 1-Methyl-2-Pyrrolidone (NMP) solvent is adhesive, and concentration is about 20g/L.Through stirring fully mixing.The Cu powder of mixing 6%wt, fully stirs.Siccative average mark adds Graphene four times, and every minor tick 28-32 minute, fully stirs, and obtains thick Graphene slurry.After fully being stirred by graphite slurry, battery front side is pasted the protection of blue film, immerse in Graphene slurry, with the lift of 2mm/s speed, take off and be placed on 150 ° of c oven for drying, peel off the blue film in front, complete battery unit structure.Transformation efficiency is 7.86% (as Suo Shi Fig. 5 (c)), and all the other are with embodiment 1.
Embodiment 10
Prepared by transparency conducting layer: adopt LPCVD to deposit FTO electro-conductive glass, underlayer temperature is 400 DEG C, and reaction pressure is 3kPa, and precursors is Tetramethyltin (TMT), Bromotrifluoromethane (CBrF3) gas provides F source, passes into O simultaneously 2and N 2, wherein N 2as carrier gas.Deposit thickness is about 500nm.
Prepared by resistive formation: adopt LPCVD to deposit SnO layer, reacting gas is 0.25sccmTetramethyltin (TMT), 18sccmO2 and 15sccmN2, and underlayer temperature is 550 DEG C, and reaction pressure is 2kPa, and deposit thickness is 500nm
Prepared by Window layer: adopt chemical bath legal system for CdS layer, reactant is ammonium acetate, cadmium acetate, ammoniacal liquor and thiocarbamide.First add deionized water by airtight container, be heated to 80 DEG C, add cadmium acetate, ammonium acetate, ammoniacal liquor, deposit thickness is about 100nm.
Prepared by light-absorption layer: nearly vacuum sublimation prepares CdTe thin film, and underlayer temperature is 500 DEG C, and argon gas or argon oxygen gas mixture are as carrier gas, and reaction pressure 1kPa, evaporation source is CdTe, and deposit thickness is about 7 μm.
Prepared by back-contact electrode: pour Kynoar (PVDF) solvent into container, and adopt magnetic agitation, be heated to 80 DEG C, adding 1-Methyl-2-Pyrrolidone (NMP) solvent is adhesive, and concentration is about 20g/L.Through stirring fully mixing.The Cu powder of mixing 6%wt, fully stirs.Siccative average mark adds Graphene four times, and every minor tick 28-32 minute, fully stirs, and obtains thick Graphene slurry.The Cu powder of mixing 6%wt, fully stirs.To mix after copper Graphene slurry fully stirs, and battery front side be pasted the protection of blue film, immerse graphite slurry, with the lift of 2mm/s speed, take off and be placed on 150 ° of c oven for drying, peel off the blue film in front, complete battery unit structure.Transformation efficiency is 7.86% (as Suo Shi Fig. 5 (c)), and all the other are with embodiment 1.
Embodiment 11
Prepared by transparency conducting layer: adopt LPCVD to deposit FTO electro-conductive glass, underlayer temperature is 400 DEG C, and reaction pressure is 3kPa, and precursors is Tetramethyltin (TMT), Bromotrifluoromethane (CBrF3) gas provides F source, passes into O simultaneously 2and N 2, wherein N 2as carrier gas.Deposit thickness is about 500nm.
Prepared by resistive formation: adopt LPCVD to deposit SnO layer, reacting gas is 0.25sccmTetramethyltin (TMT), 18sccmO 2and 15sccmN 2, underlayer temperature is 550 DEG C, and reaction pressure is 2kPa, and deposit thickness is 500nm
Prepared by Window layer: adopt chemical bath legal system for CdS layer, reactant is ammonium acetate, cadmium acetate, ammoniacal liquor and thiocarbamide.First add deionized water by airtight container, be heated to 80 DEG C, add cadmium acetate, ammonium acetate, ammoniacal liquor, deposit thickness is about 100nm.
Prepared by light-absorption layer: nearly vacuum sublimation prepares CdTe thin film, and underlayer temperature is 500 DEG C, and argon gas or argon oxygen gas mixture are as carrier gas, and reaction pressure 1kPa, evaporation source is CdTe, and deposit thickness is about 7 μm.
Prepared by barrier layer: adopt sputtering method to prepare ZnTe/ZnTe:Cu composite bed, above-mentioned underlayer temperature is 300 DEG C, reaction pressure is 0.1Pa, power is 100W, argon gas or argon oxygen gas mixture are as carrier gas, gas flow 5sccm, target is ZnTe target and ZnTe:Cu, and deposit thickness is respectively 20nm and 70nm.
Prepared by back-contact electrode: pour Kynoar (PVDF) solvent into container, and adopt magnetic agitation, be heated to 80 DEG C, adding 1-Methyl-2-Pyrrolidone (NMP) solvent is adhesive, and concentration is about 20g/L.Through stirring fully mixing.The Cu powder of mixing 6%wt, fully stirs.Siccative average mark adds Graphene four times, and every minor tick 28-32 minute, fully stirs, and obtains thick Graphene slurry.After graphite slurry is fully stirred, battery front side is pasted the protection of blue film, immerse graphite slurry, with the lift of 2mm/s speed, take off and be placed on 150 ° of c oven for drying, peel off the blue film in front, complete battery unit structure.Transformation efficiency is as shown in Fig. 5 (c), and all the other are with embodiment 1.

Claims (5)

1. the preparation method of the back-contact electrode in a CdTe thin film solar battery structure, the preparation method of described back-contact electrode comprises the preparation on conductive glass layer, Window layer, light-absorption layer, barrier layer successively, described back-contact electrode, comprise transparent conducting glass layer, Window layer, light-absorption layer, barrier layer successively, graphene film layer is prepared as back-contact electrode in the back side, barrier layer, and the thickness of graphene layer is 0.1 μm of-1mm; Electro-conductive glass is tin-doped indium oxide, Al-Doped ZnO or fluorine doped tin oxide glass, the thickness 1mm ~ 3mm of glass substrate, above the thickness of conductive layer be 300nm ~ 3 μm; Window layer is cadmium sulfide, and thickness is 20nm ~ 300 μm; Light-absorption layer is cadmium telluride, and thickness is in 600nm ~ 10 μm; Barrier layer is zinc telluridse/mix copper zinc telluridse composite bed, and its thickness is between 5nm ~ 500nm; Or be telluride mercury/mix copper telluride mercury composite bed, thickness is 5nm ~ 500nm;
It is characterized in that in Graphene, add adhesive prepares Graphene slurry, then starched by Graphene and be prepared into graphene layer, concrete steps are: a) adopt Kynoar to be solute, 1-Methyl-2-Pyrrolidone is solvent, by 0.01g/ml to 1g/ml proportional arrangement adhesive; The mixed liquor of the adhesive b) step a) configured, through stirring, fully mixes; C) addition Graphene being inserted Graphene in adhesive b) prepared is 0.01g/ml to 100g/ml, through fully stirring, obtains thick Graphene slurry; D) by step c) obtained Graphene slurry, prepare graphene film layer at the back side on CdTe battery barrier layer, as battery terminal contact back electrode by printing, spin coating or method of pulling up.
2., by preparation method according to claim 1, when it is characterized in that having resistive formation between the transparent conducting glass of the CdTe battery prepared and Window layer, then in Graphene slurry, add 1-40wt%Cu or HgTe:Cu, and fully stir.
3., by preparation method according to claim 2, be placed on spin coater by battery when it is characterized in that steps d spin coating, vacuum suction is fixed, and after fully being stirred by Graphene slurry, is poured on cell backside and adopts two step spin coatings, spin coating post-drying.
4. by preparation method according to claim 2; it is characterized in that the czochralski method described in steps d is that battery front side is pasted the protection of blue film by the Graphene slurry of preparation after fully stirring; immerse in Graphene slurry, with the lift of 2mm/s speed, take off after drying and peel off the blue film in front.
5., by the preparation method described in claim 3 or 4, it is characterized in that bake out temperature is 150 DEG C.
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US20150136215A1 (en) * 2013-11-21 2015-05-21 Tsmc Solar Ltd. Solar cell contacts and method of fabricating same
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CN107204381B (en) * 2016-03-18 2019-08-13 龙焱能源科技（杭州）有限公司 A kind of CdTe battery back electrode and CdTe battery
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CN107887456A (en) * 2017-10-30 2018-04-06 周燕红 A kind of preparation method of back electrode molybdenum (Mo) film
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CN109631354A (en) * 2018-12-13 2019-04-16 广东五星太阳能股份有限公司 External cadmium telluride thin-film battery photovoltaic and photothermal solar flat plate collector

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