CN104576788A - Graphene/cadmium telluride solar battery intensified by cadmium selenide and preparation method thereof - Google Patents
Graphene/cadmium telluride solar battery intensified by cadmium selenide and preparation method thereof Download PDFInfo
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- CN104576788A CN104576788A CN201410827635.9A CN201410827635A CN104576788A CN 104576788 A CN104576788 A CN 104576788A CN 201410827635 A CN201410827635 A CN 201410827635A CN 104576788 A CN104576788 A CN 104576788A
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- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 84
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 79
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 title claims abstract description 56
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 16
- 238000007747 plating Methods 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 230000002708 enhancing effect Effects 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229960001296 zinc oxide Drugs 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000005728 strengthening Methods 0.000 claims 1
- 230000009466 transformation Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 77
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010434 drip painting Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a graphene/cadmium telluride solar battery intensified by cadmium selenide and a preparation method thereof. The graphene/cadmium telluride solar battery sequentially comprises a substrate, a conductive coated film layer, a cadmium telluride layer, a graphene layer and a cadmium selenide layer; the solar battery is further provided with a first electrode and a second electrode, the first electrode is arranged on the conductive coated film layer, and the second electrode is arranged on the graphene layer. The preparation method of the graphene/cadmium telluride solar battery comprises steps as follows: the conductive coated film layer is deposited on the substrate first, and then the cadmium telluride layer is deposited; then graphene is transferred to the cadmium telluride layer; the cadmium selenide layer is prepared on the graphene layer; finally, the electrodes are prepared on the graphene layer and the conductive coated film layer respectively to obtain the solar battery. A photoproduction doping effect introduced by the cadmium selenide is used for obtaining the graphene/cadmium telluride solar battery with high transformation efficiency, the process is simple, and popularization is facilitated.
Description
Technical field
The present invention relates to a kind of novel solar battery and manufacture method thereof, particularly relate to Graphene/cadmium-Te solar battery of cadmium selenide enhancing and preparation method thereof, belong to technical field of solar batteries.
Background technology
Solar cell, as a kind of new green power, is the most important regenerative resource of sustainable development of the mankind.At present, the share of crystal silicon solar energy battery occuping market ~ 90%.But compared with conventional power generation usage, solar cell cost of electricity-generating is still higher, limits its extensive use.One of reason that solar cell cost of electricity-generating is higher is that battery manufacture cost is higher and electricity conversion is lower.
Since grapheme material finds, its excellent properties shown in electricity, optics, magnetics and terms of mechanics such as high carrier mobility, Young's modulus etc. that high printing opacity is new, high have caused the hope that Graphene is applied at numerous areas.Wherein Graphene is that Graphene opens gate in the application of energy field in the application study of area of solar cell.At present, the heterojunction that existing researcher utilizes Graphene and silicon materials to be formed makes solar cell, and the highest transformation efficiency reaches 14.5%, and considerably simplify conventional solar cell manufacturing process, greatly can reduce manufacturing cost.For solar cell application, silicon materials energy gap is narrower, is indirect forbidden band simultaneously, is not optimal basic material.Cadmium telluride has more suitable energy gap, is also direct band gap material, and expection can obtain higher transformation efficiency.Up to the present the research of Graphene/cadmium telluride heterojunction solar battery also do not have report, on this basis, the present invention proposes Graphene/cadmium telluride solar cell that cadmium selenide strengthens, CdSe quantum dots layer or thin layer add the transformation efficiency that greatly can promote Graphene/cadmium telluride heterojunction solar battery.
Summary of the invention
The object of the present invention is to provide a kind of phototranstormation efficiency high and Graphene/cadmium-Te solar battery of the simple cadmium selenide enhancing of preparation technology and preparation method thereof.
Graphene/cadmium-Te solar battery that cadmium selenide of the present invention strengthens, there are substrate, conduction film plating layer, cadmium-telluride layer, graphene layer and cadmium selenide layer from bottom to top successively, described solar cell is also provided with the first electrode and the second electrode, first electrode is arranged on conduction film plating layer, and the second electrode is arranged on graphene layer.
Described conduction film plating layer can be metal, ITO, FTO, N-shaped doping zinc-oxide or p-type doping zinc-oxide.
Graphene in described graphene layer is generally 1-10 layer.
Described cadmium selenide layer can be cadmium selenide thin film or CdSe quantum dots layer, and described CdSe quantum dots diameter is 1nm-1 μm.
Described substrate can be rigid substrate or flexible substrate.
The first described electrode and the second electrode all can be the combination electrode of one or more in gold, palladium, silver, titanium, chromium and nickel.
Prepare the method for Graphene/cadmium-Te solar battery that above-mentioned cadmium selenide strengthens, comprise the steps:
1) at the Grown conduction film plating layer of cleaning;
2) on conduction film plating layer, deposit cadmium-telluride layer, and reserve the area of growth first electrode on conduction film plating layer surface;
3) Graphene is transferred on cadmium-telluride layer;
4) on graphene layer, make cadmium selenide layer, and reserve the area of growth second electrode on graphene layer surface;
5) deposition of first electrode on conduction film plating layer, and on graphene layer, deposit the second electrode.
The beneficial effect that the present invention compared with prior art has is: Graphene/cadmium-Te solar battery that cadmium selenide of the present invention strengthens, by adding CdSe quantum dots layer or thin layer in Graphene/cadmium-Te solar battery, photodoping effect can be played, the electricity conversion of this solar cell is made to promote about 50% on former basis, in addition, compared with conventional crystal silicon solar cell manufacturing process, the preparation technology of solar cell of the present invention is simple, cost is lower, is convenient to promote.
accompanying drawing illustrates:
Fig. 1 is the structural representation of Graphene/cadmium-Te solar battery that cadmium selenide strengthens;
Fig. 2 be cadmium selenide strengthen Graphene/cadmium-Te solar battery can be with schematic diagram.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
With reference to Fig. 1, Graphene/cadmium-Te solar battery that cadmium selenide of the present invention strengthens has substrate 1, conduction film plating layer 2, cadmium-telluride layer 3, graphene layer 4 and cadmium selenide layer 6 from bottom to top successively, described solar cell is also provided with the first electrode 5 and the second electrode 7, first electrode 5 is arranged on conduction film plating layer 2, and the second electrode 7 is arranged on graphene layer 4.
Embodiment 1:
1) polyimide flex substrate cleaned up in deionized water and dry up;
2) what on polyimide flex substrate, utilize magnetron sputtering deposition 40 nanometer thickness mixes indium tin oxide;
3) physical gas phase deposition technology is utilized to deposit the cadmium-telluride layer of 6 micron thickness mixing on indium stannic oxide layer, and the area of reserved growth first electrode on the ito layer;
4) single-layer graphene is transferred on cadmium-telluride layer;
5) spin coating CdSe quantum dots solution on Graphene, and the area reserving growth second electrode on Graphene; Described CdSe quantum dots diameter is 1nm-1 μm;
6) reserve reserved area place coating silver in area place and ITO layer at Graphene starch and dry; Obtain Graphene/cadmium telluride solar cell that cadmium selenide strengthens.
The band structure schematic diagram of Graphene/cadmium-Te solar battery that the cadmium selenide obtained strengthens as shown in Figure 2, the electronics produced in CdSe quantum dots and cadmium-telluride layer under light conditions all injects in Graphene, and cadmium-telluride layer collects hole, thus generation electrical potential difference, the photodoping effect due to cadmium selenide layer can significantly improve the electricity conversion of solar cell.
Embodiment 2:
1) glass substrate cleaned up in deionized water and dry up;
2) fluorine doped tin oxide of magnetron sputtering deposition 200 nanometer thickness is utilized on a glass substrate;
3) on fluorine doped tin oxide layer, utilize physical gas phase deposition technology to deposit the cadmium-telluride layer of 8 micron thickness, and reserve the area of growth first electrode on FTO layer;
4) three layer graphenes are transferred on cadmium-telluride layer;
5) on Graphene, spray CdSe quantum dots solution, and reserve the area of growth second electrode on graphene layer; Described CdSe quantum dots diameter is 1nm-1 μm;
6) reserved area place thermal evaporation gold electrode on area place and fluorine doped tin oxide layer is reserved at graphene layer; Obtain Graphene/cadmium-Te solar battery that cadmium selenide strengthens.
Embodiment 3:
1) ceramic substrate cleaned up in deionized water and dry up;
2) the nickel metal of electron-beam evaporation 60 nanometer thickness is utilized on a ceramic substrate;
3) on nickel metal layer, utilize chemical bath method to deposit the cadmium-telluride layer of 5 micron thickness, and reserve the area of growth first electrode on nickel metal layer;
4) 10 layer graphenes are transferred on cadmium-telluride layer;
5) on Graphene, prepare cadmium selenide thin film, and reserve the area of growth second electrode on graphene layer;
6) reserved area place silk screen printing silver electrode on area place and nickel metal layer is reserved at graphene layer; Obtain Graphene/cadmium-Te solar battery that cadmium selenide strengthens.
Embodiment 4:
1) ceramic substrate cleaned up in deionized water and dry;
2) the nickel metal of electron-beam evaporation 60 nanometer thickness is utilized on a ceramic substrate;
3) on nickel metal layer, utilize chemical bath method to deposit the cadmium-telluride layer of 5 micron thickness, and reserve the area of growth first electrode on nickel metal layer;
4) 10 layer graphenes are transferred on cadmium-telluride layer;
5) on Graphene, drip painting CdSe quantum dots solution, and on graphene layer, reserve the area of growth second electrode; Described CdSe quantum dots diameter is 1nm-1 μm;
6) on Graphene, reserved area place and nickel metal layer reserve area place silk screen printing silver electrode; Obtain Graphene/cadmium-Te solar battery that cadmium selenide strengthens.
Embodiment 5:
1) PETG substrate cleaned up in deionized water and dry up;
2) on PETG substrate, utilize the Al-Doped ZnO of pulsed laser deposition 100 nanometer thickness;
3) on Al-Doped ZnO layer, utilize the cadmium-telluride layer of vapour pressure techniques of deposition 10 micron thickness, and reserve the area of growth first electrode on Al-Doped ZnO;
4) 8 layer graphenes are transferred on cadmium-telluride layer;
5) spin coating CdSe quantum dots solution on Graphene, and the area reserving growth second electrode on graphene layer; Described CdSe quantum dots diameter is 1nm-1 μm;
6) area place is reserved and Al-Doped ZnO layer reserves area place thermal evaporation palladium, silver, titanium combination electrode at graphene layer; Obtain Graphene/cadmium-Te solar battery that cadmium selenide strengthens.
Embodiment 6:
1) silicon carbide substrates cleaned up in deionized water and dry up;
2) Al-Doped ZnO of metal organic chemical vapor deposition 150 nanometer thickness is utilized on silicon carbide substrates;
3) on Al-Doped ZnO layer, utilize the cadmium-telluride layer of vapour pressure techniques of deposition 3 micron thickness, and reserve the area of growth first electrode on Al-Doped ZnO layer;
4) 6 layer graphenes are transferred on cadmium-telluride layer;
5) on Graphene, prepare cadmium selenide thin film, and reserve the area of growth second electrode on graphene layer;
6) area place is reserved and Al-Doped ZnO layer reserves area place thermal evaporation chromium, nickel combination electrode at graphene layer; Obtain Graphene/cadmium-Te solar battery that cadmium selenide strengthens.
Claims (7)
1. Graphene/the cadmium-Te solar battery of a cadmium selenide enhancing, it is characterized in that having substrate (1), conduction film plating layer (2), cadmium-telluride layer (3), graphene layer (4) and cadmium selenide layer (6) from bottom to top successively, described solar cell is also provided with the first electrode (5) and the second electrode (7), first electrode (5) is arranged in conduction film plating layer (2), and the second electrode (7) is arranged on graphene layer (4).
2. Graphene/cadmium-Te solar battery of strengthening of cadmium selenide according to claim 1, it is characterized in that described conduction film plating layer (2) is metal, ITO, FTO, N-shaped doping zinc-oxide or p-type doping zinc-oxide.
3. Graphene/the cadmium-Te solar battery of cadmium selenide enhancing according to claim 1, is characterized in that the Graphene in described graphene layer (4) is 1-10 layer.
4. Graphene/the cadmium-Te solar battery of cadmium selenide enhancing according to claim 1, it is characterized in that described cadmium selenide layer (6) is for cadmium selenide thin film or CdSe quantum dots layer, described CdSe quantum dots diameter is 1nm-1 μm.
5. Graphene/the cadmium-Te solar battery of cadmium selenide enhancing according to claim 1, is characterized in that described substrate (1) is rigid substrate or flexible substrate.
6. Graphene/the cadmium-Te solar battery of cadmium selenide enhancing according to claim 1, it is characterized in that described the first electrode (5) is the combination electrode of one or more in gold, palladium, silver, titanium, chromium and nickel, described the second electrode (7) is the combination electrode of one or more in gold, palladium, silver, titanium, chromium and nickel.
7. the method for the Graphene/cadmium-Te solar battery of the cadmium selenide enhancing of preparation as described in any one of claim 1 ~ 6, is characterized in that comprising the steps:
1) upper growth conduction film plating layer (2) of the substrate (1) of cleaning;
2) in conduction film plating layer (2), deposit cadmium-telluride layer (3), and reserve the area of growth first electrode (5) on conduction film plating layer (2) surface;
3) Graphene is transferred on cadmium-telluride layer (3);
4) at graphene layer (4) upper making cadmium selenide layer (6), and the area of growth second electrode (7) is reserved on graphene layer (4) surface;
5) at the upper deposition of first electrode (5) of conduction film plating layer (2), and at upper deposition second electrode (7) of graphene layer (4).
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105206701A (en) * | 2015-10-13 | 2015-12-30 | 山西国惠光电科技有限公司 | Photoelectric detector directly deposited on readout circuit and preparation method of photoelectric detector |
| CN106449859A (en) * | 2016-11-30 | 2017-02-22 | 庞倩桃 | Gallium arsenide quantum dot reinforced infrared detector and preparation method thereof |
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| CN106770466A (en) * | 2016-11-30 | 2017-05-31 | 庞倩桃 | Enhanced gas sensor of a kind of iron oxide quantum dot and preparation method thereof |
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| CN109065647A (en) * | 2018-10-18 | 2018-12-21 | 君泰创新（北京）科技有限公司 | Solar battery and preparation method thereof |
| CN109852390A (en) * | 2019-03-15 | 2019-06-07 | 苏州科技大学 | Based on cadmium telluride quantum dot/redox graphene complex electrogenerated chemiluminescence material and its preparation method and application |
| CN109852390B (en) * | 2019-03-15 | 2022-03-01 | 苏州科技大学 | Electrochemiluminescence material based on cadmium telluride quantum dot/redox graphene compound and preparation method and application thereof |
| CN114182891A (en) * | 2021-12-13 | 2022-03-15 | 浙江东南网架股份有限公司 | Novel daylighting top film photovoltaic roof panel and connecting device thereof |
| CN116314424A (en) * | 2022-12-21 | 2023-06-23 | 深圳大学 | Multiband ultraviolet photoelectric detector and preparation method thereof |
| CN116875958A (en) * | 2023-09-07 | 2023-10-13 | 北京理工大学 | Cr 5 Te 8 Electromagnetic wave-absorbing material of @ expanded graphite and preparation method and application thereof |
| CN116875958B (en) * | 2023-09-07 | 2023-12-19 | 北京理工大学 | Cr 5 Te 8 Electromagnetic wave-absorbing material of @ expanded graphite and preparation method and application thereof |
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