CN106770466A - Enhanced gas sensor of a kind of iron oxide quantum dot and preparation method thereof - Google Patents
Enhanced gas sensor of a kind of iron oxide quantum dot and preparation method thereof Download PDFInfo
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- CN106770466A CN106770466A CN201611082017.1A CN201611082017A CN106770466A CN 106770466 A CN106770466 A CN 106770466A CN 201611082017 A CN201611082017 A CN 201611082017A CN 106770466 A CN106770466 A CN 106770466A
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
Abstract
The present invention relates to the enhanced Graphene of a kind of iron oxide quantum dot/tin oxide gas sensor and preparation method thereof, the Graphene/tin oxide gas sensor has substrate, conductive film plating layer, stannic oxide layer, graphene layer and iron oxide quantum dot layer successively from bottom to top, described gas sensor is additionally provided with first electrode and second electrode, first electrode is arranged on conductive film plating layer, and second electrode is arranged on graphene layer.Its preparation method is as follows：Conductive film plating layer, redeposited stannic oxide layer are first deposited on substrate；Then Graphene is transferred on stannic oxide layer；Iron oxide quantum dot layer is prepared on graphene layer；It is last to make electrode respectively on graphene layer and conductive film plating layer, obtain gas sensor.Enhanced Graphene/tin oxide the gas sensor of iron oxide quantum dot of the invention obtains the Graphene with transformation efficiency high/tin oxide gas sensor using the doping effect that iron oxide quantum dot is introduced.
Description
Technical field
The present invention relates to a kind of new gas sensor and its manufacture method, more particularly to the enhanced stone of iron oxide quantum dot
Black alkene/tin oxide gas sensor and preparation method thereof, belongs to gas sensor technical field.
Background technology
Nano material has the features such as specific surface area is big, electrical properties are sensitive to adsorption, and nanometer technology is applied to
Sensory field, is expected to the senser element for preparing fast response time, sensitivity is high, selectivity is good.Metal oxide semiconductor, especially
It is tin oxide base nano material, of great interest due to its superior optics, electricity and gas sensing characteristicses.Grind
Study carefully and show, doping can further improve the gas sensing performance of tin oxide base nano material.Although tin oxide base gas sensing
Device has been achieved for certain achievement, but its sensitivity and selectivity still need to further raising.Reduce size and the increasing of particle
Plus the specific surface area of material is to improve the key point of sensitivity and selectivity.
2004, the Geim and Novosolevo of Univ Manchester UK prepared monatomic lamella, with cellular
The Graphene of lattice structure.Due to its typical two-dimensional structure, there is Graphene the specific surface area of superelevation, electrical conductivity surface is inhaled
Attached sensitive the advantages of.Recent studies have found that, Graphene can be applied to prepare gas sensor and to vapor, carbon monoxide,
Ammonia and nitrogen dioxide gas have good response.But, detection of the graphene sensor to some dangerous gas, such as
Methane, not yet finds report so far.
The content of the invention
It is an object of the invention to provide the iron oxide quantum dot increasing of a kind of detection of gas efficiency high and preparation process is simple
Strong Graphene/tin oxide gas sensor and preparation method thereof.
Enhanced Graphene/tin oxide the gas sensor of iron oxide quantum dot of the invention, have successively from bottom to top substrate,
Conductive film plating layer, stannic oxide layer, graphene layer and iron oxide quantum dot layer, described gas sensor be additionally provided with first electrode and
Second electrode, first electrode is arranged on conductive film plating layer, and second electrode is arranged on graphene layer.
Described conductive film plating layer can be metal, ITO, FTO, N-shaped doped ferric oxide or p-type doped ferric oxide.
Graphene in described graphene layer is usually 1-10 layers.
Described iron oxide quantum dot layer can be iron oxide quantum dot film, and described iron oxide lateral size of dots is
1nm-1μm。
Described substrate can be rigid substrate or flexible substrate.
Described first electrode and second electrode being combined for one or more in gold, palladium, silver, titanium, chromium and nickel
Electrode.
The method for preparing the enhanced Graphene of above-mentioned iron oxide quantum dot/tin oxide gas sensor, including following step
Suddenly：
1) in clean Grown conduction film plating layer；
2) the deposited oxide tin layers on conductive film plating layer, and reserve the face of growth first electrode in conductive plated film layer surface
Product；
3) boron doped graphene is transferred on stannic oxide layer；
4) iron oxide quantum dot layer is made on graphene layer, and the face of growth second electrode is reserved on graphene layer surface
Product；
5) deposition of first electrode on conductive film plating layer, and second electrode is deposited on graphene layer.
The present invention has an advantageous effect in that compared with prior art：The enhanced graphite of iron oxide quantum dot of the invention
Alkene/tin oxide gas sensor, by iron oxide quantum dot film layer is added in Graphene/tin oxide gas sensor, can
Play photodoping effect so that the detection efficient of the gas sensor lifts 10% or so in original basis, additionally, with traditional gas
Body sensor manufacturing process is compared, and the preparation process is simple of gas sensor of the invention, cost is relatively low, is easy to promote.
Brief description of the drawings
Fig. 1 Fig. 1 is the structural representation of the enhanced Graphene of iron oxide quantum dot/tin oxide gas sensor.
Specific embodiment
The present invention will be further described with specific embodiment below in conjunction with the accompanying drawings.
Reference picture 1, the enhanced Graphene/tin oxide gas sensor of iron oxide quantum dot of the invention is from bottom to top successively
There are substrate 1, conductive film plating layer 2, stannic oxide layer 3, graphene layer 4 and iron oxide quantum dot layer 6, described gas sensor also sets
There are first electrode 5 and second electrode 7, first electrode 5 is arranged on conductive film plating layer 2, and second electrode 7 is arranged on graphene layer 4
On.
Embodiment 1：
1) polyimide flex substrate is cleaned up in deionized water and is dried up；
2) using the indium doped tin oxide of the nanometer thickness of magnetron sputtering deposition 40 on polyimide flex substrate；
3) 6 microns of stannic oxide layers of thickness are deposited using physical gas phase deposition technology on indium doped tin oxide layer, and in ITO layer
The area of upper reserved growth first electrode；
4) single-layer graphene is transferred on stannic oxide layer；
5) the spin coating iron oxide quantum dot solution on Graphene, and the area of growth second electrode is reserved on Graphene；
The iron oxide lateral size of dots is 1nm-1 μm；
6) coat silver paste at reserved area at the reserved area of Graphene and in ITO layer and dry；Obtain aoxidizing iron
The son enhanced Graphene/tin oxide gas sensor of point.
The electronics that gas is produced in the iron oxide quantum dot and stannic oxide layer in the case of being passed through to Graphene in injection, and
Stannic oxide layer collects hole, so that electrical potential difference is produced, because the photodoping effect of iron oxide quantum dot layer is remarkably improved gas
The detection efficient of sensor.
Embodiment 2：
1) glass substrate is cleaned up in deionized water and is dried up；
2) on a glass substrate using the fluorine doped tin oxide of the nanometer thickness of magnetron sputtering deposition 200；
3) 8 microns of stannic oxide layers of thickness are deposited using physical gas phase deposition technology on fluorine doped tin oxide layer, and at FTO layers
The area of upper reserved growth first electrode；
4) three layer graphenes are transferred on stannic oxide layer；
5) iron oxide quantum dot solution is sprayed on Graphene, and the face of growth second electrode is reserved on graphene layer
Product；The iron oxide lateral size of dots is 1nm-1 μm；
6) thermal evaporation gold electrode at area is reserved at the reserved area of graphene layer and on fluorine doped tin oxide layer；Obtain oxygen
Change the enhanced Graphene/tin oxide gas sensor of iron quantum dot.
Embodiment 3：
1) ceramic substrate is cleaned up in deionized water and is dried up；
2) on a ceramic substrate using the nickel metal of the nanometer thickness of electron-beam evaporation 60；
3) 5 microns of stannic oxide layers of thickness are deposited using chemical bath method on nickel metal layer, and is reserved on nickel metal layer
Grow the area of first electrode；
4) 10 layer graphenes are transferred on stannic oxide layer；
5) iron oxide quantum dot film is prepared on Graphene, and the face of growth second electrode is reserved on graphene layer
Product；
6) silk-screen printing silver electrode at area is reserved at the reserved area of graphene layer and on nickel metal layer；Aoxidized
The enhanced Graphene of iron quantum dot/tin oxide gas sensor.
Embodiment 4：
1) ceramic substrate is cleaned up in deionized water and is dried；
2) on a ceramic substrate using the nickel metal of the nanometer thickness of electron-beam evaporation 60；
3) 5 microns of stannic oxide layers of thickness are deposited using chemical bath method on nickel metal layer, and is reserved on nickel metal layer
Grow the area of first electrode；
4) 10 layer graphenes are transferred on stannic oxide layer；
5) the drop coating iron oxide quantum dot solution on Graphene, and the face of growth second electrode is reserved on graphene layer
Product；The iron oxide lateral size of dots is 1nm-1 μm；
6) silk-screen printing silver electrode at area is reserved at reserved area on Graphene and on nickel metal layer；Aoxidized
The enhanced Graphene of iron quantum dot/tin oxide gas sensor.
Embodiment 5：
1) polyethylene terephthalate substrate is cleaned up and is dried up in deionized water；
2) aluminium iron oxide is mixed using the nanometer thickness of pulsed laser deposition 100 on polyethylene terephthalate substrate；
3) 10 microns of stannic oxide layers of thickness of vapour pressure techniques of deposition are utilized on aluminium iron oxide layer is mixed, and is mixing alumina
Change the area that growth first electrode is reserved on iron；
4) 8 layer graphenes are transferred on stannic oxide layer；
5) the spin coating iron oxide quantum dot solution on Graphene, and the face of growth second electrode is reserved on graphene layer
Product；The iron oxide lateral size of dots is 1nm-1 μm；
6) reserve at area and mix thermal evaporation palladium, silver, titanium compound electric at the reserved area of aluminium iron oxide layer in graphene layer
Pole；Obtain the enhanced Graphene of iron oxide quantum dot/tin oxide gas sensor.
Embodiment 6：
1) silicon carbide substrates are cleaned up in deionized water and is dried up；
2) aluminium iron oxide is mixed using the nanometer thickness of metal organic chemical vapor deposition 150 on silicon carbide substrates；
3) 3 microns of stannic oxide layers of thickness of vapour pressure techniques of deposition are utilized on aluminium iron oxide layer is mixed, and is mixing alumina
Change the area that growth first electrode is reserved in iron layer；
4) 6 layer graphenes are transferred on stannic oxide layer；
5) iron oxide quantum dot film is prepared on Graphene, and the face of growth second electrode is reserved on graphene layer
Product；
6) reserve at area and mix thermal evaporation chromium, nickel combination electrode at the reserved area of aluminium iron oxide layer in graphene layer；
Obtain the enhanced Graphene of iron oxide quantum dot/tin oxide gas sensor.
Claims (7)
1. the enhanced Graphene of a kind of iron oxide quantum dot/tin oxide gas sensor, it is characterised in that have successively from bottom to top
Substrate (1), conductive film plating layer (2), stannic oxide layer (3), graphene layer (4) and iron oxide quantum dot layer (6), described gas are passed
Sensor is additionally provided with first electrode (5) and second electrode (7), and first electrode (5) is arranged on conductive film plating layer (2), second electrode
(7) it is arranged on graphene layer (4).
2. the enhanced Graphene of iron oxide quantum dot according to claim 1/tin oxide gas sensor, it is characterised in that
Described conductive film plating layer (2) is metal, ITO, FTO, N-shaped doped ferric oxide or p-type doped ferric oxide.
3. the enhanced Graphene of iron oxide quantum dot according to claim 1/tin oxide gas sensor, it is characterised in that
Graphene in described graphene layer (4) is 1-10 layers.
4. the enhanced Graphene of iron oxide quantum dot according to claim 1/tin oxide gas sensor, it is characterised in that
Described iron oxide quantum dot layer (6) is iron oxide quantum dot layer, and described iron oxide lateral size of dots is 1nm-1 μm.
5. the enhanced Graphene of iron oxide quantum dot according to claim 1/tin oxide gas sensor, it is characterised in that
Described substrate (1) is rigid substrate or flexible substrate.
6. the enhanced Graphene of iron oxide quantum dot according to claim 1/tin oxide gas sensor, it is characterised in that
Described first electrode (5) is the combination electrode of one or more in gold, palladium, silver, titanium, chromium and nickel, described second electrode
(7) it is the combination electrode of one or more in gold, palladium, silver, titanium, chromium and nickel.
7. the enhanced Graphene of the iron oxide quantum dot/tin oxide gas sensor as described in any one of claim 1~6 is prepared
Method, it is characterised in that comprise the following steps：
1) conductive film plating layer (2) is grown on clean substrate (1)；
2) the deposited oxide tin layers (3) on conductive film plating layer (2), and in the reserved growth first electrode in conductive film plating layer (2) surface
(5) area；
3) Graphene is transferred on stannic oxide layer (3)；
4) iron oxide quantum dot layer (6) is made on graphene layer (4), and in the reserved electricity of growth regulation two in graphene layer (4) surface
The area of pole (7)；
5) deposition of first electrode (5) on conductive film plating layer (2), and second electrode (7) is deposited on graphene layer (4).
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Cited By (3)
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|---|---|---|---|---|
| CN109142467A (en) * | 2018-07-23 | 2019-01-04 | 杭州电子科技大学 | A kind of high sensitive NO2Gas sensor and preparation method thereof |
| WO2019100674A1 (en) * | 2017-11-24 | 2019-05-31 | 深圳大学 | Graphene material and sensor for detecting gas component |
| CN111308122A (en) * | 2019-12-06 | 2020-06-19 | 云南师范大学 | Gas flow velocity detector and system based on boron-doped silicon quantum dots |
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Cited By (4)
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|---|---|---|---|---|
| WO2019100674A1 (en) * | 2017-11-24 | 2019-05-31 | 深圳大学 | Graphene material and sensor for detecting gas component |
| CN109142467A (en) * | 2018-07-23 | 2019-01-04 | 杭州电子科技大学 | A kind of high sensitive NO2Gas sensor and preparation method thereof |
| CN111308122A (en) * | 2019-12-06 | 2020-06-19 | 云南师范大学 | Gas flow velocity detector and system based on boron-doped silicon quantum dots |
| CN111308122B (en) * | 2019-12-06 | 2022-02-25 | 云南师范大学 | Gas flow velocity detector and system based on boron-doped silicon quantum dots |
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