CN104532210A - Atomic layer deposition equipment and application - Google Patents
Atomic layer deposition equipment and application Download PDFInfo
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- CN104532210A CN104532210A CN201410749459.1A CN201410749459A CN104532210A CN 104532210 A CN104532210 A CN 104532210A CN 201410749459 A CN201410749459 A CN 201410749459A CN 104532210 A CN104532210 A CN 104532210A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses atomic layer deposition equipment and application. An inert gas storage tank is connected with an air inlet of a first flow meter and an air inlet of a second flow meter respectively through air delivery pipes; an air outlet of the first flow meter and an air outlet of the second flow meter are respectively connected with an air inlet of a reaction cavity through the air delivery pipes; an air outlet of the reaction cavity is connected with a vacuum pump; a first reaction material tank is also arranged on the air delivery pipe between the air outlet of the first flow meter and the air inlet of the reaction cavity; a second reaction material tank is arranged on the air delivery pipe between the air outlet of the second flow meter and the air inlet of the reaction cavity; a first temperature control device is arranged in the first reaction material tank; a second temperature control device is arranged in the second reaction material tank; and a third temperature control device is arranged in the reaction cavity. The atomic layer deposition equipment is simple in structure, and convenient to use; the cost is reduced; the thickness of the film is controlled by controlling the introduction cycle number when the atomic layer deposition equipment is used.
Description
Technical field
The invention belongs to field of chemical equipment, relate in particular to a kind of atomic layer deposition apparatus.
Background technology
Ald (Atomic layer deposition) be a kind of can by material with the monatomic form membrane method being plated in substrate surface in layer.Specifically, ald by vaporous precursors is alternately passed into reactor and on depositing base chemisorption and reaction and form deposited film, precursor reaches depositing base surface, and their are understood in matrix surface chemisorption and surface reaction occurs.Need to clean ald reactor with rare gas element between presoma replaces.Along with nanotechnology and semiconductor integrated circuit are to the requirement of device miniaturization, in the urgent need to having the thin-film material of the performance such as high precision, nanometer grade thickness, technique for atomic layer deposition can accurately control film growth, thicknesses of layers can reach atomic level, film has the features such as level and smooth, even, reproducible, and this makes technique for atomic layer deposition more and more come into one's own in the fields such as microelectronics science, optical thin film, nanosecond science and technology, catalysis engineering.
Summary of the invention
In order to the technique for atomic layer deposition that utilizes that is convenient, low cost prepares atomic layer level thin film material, the invention provides a kind of novel atomic layer deposition apparatus, it uses control simple and effective, and cost is lower, can prepare the atomic layer level thin film material of better quality.
Technical purpose of the present invention is achieved by following technical proposals:
A kind of atomic layer deposition apparatus, comprising: inertial gas tank, variable valve, pneumatic tube, first-class gauge, second gauge, the first electrically-controlled valve, the first reactant batch can, the second electrically-controlled valve, the second reactant batch can, vacuum pump, reaction cavity, wherein:
Described inertial gas tank connects the inlet mouth of first-class gauge and the inlet mouth of second gauge respectively by pneumatic tube, the air outlet place of inertial gas tank is provided with variable valve, is controlled the open and close of inertial gas tank by controlling valve; The air outlet of first-class gauge is connected with the inlet mouth of reaction cavity respectively by pneumatic tube with the air outlet of second gauge, and the air outlet of reaction cavity is connected with vacuum pump;
Air delivering pipeline between the air outlet and the inlet mouth of reaction cavity of first-class gauge is also provided with the first reactant batch can, and the first reactant batch can is connected by the first electrically-controlled valve and pneumatic tube, the first electrically-controlled valve is for controlling conducting between the first reactant batch can and pneumatic tube and closedown; Air delivering pipeline between the air outlet and the inlet mouth of reaction cavity of second gauge is provided with the second reactant batch can, and the second reactant batch can is connected by the second electrically-controlled valve and pneumatic tube, the second electrically-controlled valve is for controlling conducting between the second reactant batch can and pneumatic tube and closedown;
Be provided with the first temperature control unit in first reactant batch can, in the second reactant batch can, be provided with the second temperature control unit, the 3rd temperature control unit is set in reaction cavity.
In technique scheme, described first reactant batch can and the second reactant batch can are vertically placed.
In technique scheme, described reaction cavity is provided with cavity door, for putting into reactive group bottom material, between reaction cavity and cavity door, is provided with rubber seal.
In technique scheme, described first-class gauge, second gauge is tightly connected with pneumatic tube respectively, such as, adopt VCR sealing connection to connect.
In technique scheme, described reaction cavity and pneumatic tube are tightly connected, such as, adopt VCR sealing connection to connect.
In technique scheme, described reaction cavity arranges pressure transmitter, for monitoring the pressure in reaction cavity.
Structure of the present invention is simple, easy to use, cost reduces, when using, placing response substrate (i.e. reactive group bottom material) in reaction cavity, whole system rare gas element is as carrier gas (such as nitrogen, helium or argon gas), outlet simultaneously uses vacuum pump evacuation, make to remain on certain pressure in cavity, two under meters control the flow of carrier gas, precursors is held respectively in two reactant batch cans, by controlling the switch of electrically-controlled valve, control the conducting of respective reaction material pot and pneumatic tube, what presoma produced is brought into cavity at the steam of reactant batch can upper end by carrier gas, react.The temperature of two reactant batch cans is controlled, to produce precursors steam by the first and second temperature control units; The temperature of reaction cavity is controlled again by the 3rd temperature control unit, temperature required to reach presoma reaction.The mode that preiodic type can be adopted to deposit that passes into of precursor vapor is carried out, and is controlled the thickness of the film grown by the cycle life controlling to pass into.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention, wherein: 1 is inertial gas tank, and 2 is variable valve, 3 is pneumatic tube, and 4 is first-class gauge, and 5 is second gauge, 6 is VCR sealing connection, and 7 is the first electrically-controlled valve, and 8 is the first reactant batch can, 9 is the first temperature control unit, and 10 is the second electrically-controlled valve, and 11 is the second reactant batch can, 12 is the second temperature control unit, and 13 is the 3rd temperature control unit, and 14 is cavity door, 15 is vacuum pump, and 16 is reaction cavity.
Fig. 2 utilizes the present invention to carry out Ta
2o
5the transmission electron microscope photo of the sample of atomic layer level thin film deposition.
Embodiment
Technical scheme of the present invention is further illustrated below in conjunction with specific embodiment.
As shown in Figure 1, a kind of atomic layer deposition apparatus, comprising: inertial gas tank, variable valve, pneumatic tube, first-class gauge, second gauge, the first electrically-controlled valve, the first reactant batch can, the second electrically-controlled valve, second reactant batch can, vacuum pump, reaction cavity, wherein:
Described inertial gas tank 1 connects the inlet mouth of first-class gauge 4 and the inlet mouth of second gauge 5 respectively by pneumatic tube 3, the air outlet place of inertial gas tank is provided with variable valve 2, is controlled the open and close of inertial gas tank by controlling valve; The air outlet of first-class gauge is connected by the inlet mouth of pneumatic tube with reaction cavity 16 with the air outlet of second gauge, reaction cavity is provided with inlet mouth and air outlet, and the 3rd temperature control unit 13 and cavity door 14, the air outlet of reaction cavity is connected with vacuum pump 15; Air delivering pipeline between the air outlet and the inlet mouth of reaction cavity of first-class gauge is also provided with the first reactant batch can 8, and the first reactant batch can is connected by the first electrically-controlled valve 7 and pneumatic tube, the first electrically-controlled valve is for controlling conducting between the first reactant batch can and pneumatic tube and closedown; Air delivering pipeline between the air outlet and the inlet mouth of reaction cavity of second gauge is provided with the second reactant batch can 11, and the second reactant batch can is connected by the second electrically-controlled valve 10 and pneumatic tube, the second electrically-controlled valve is for controlling conducting between the second reactant batch can and pneumatic tube and closedown; First reactant batch can and the second reactant batch can are all vertically placed, and are provided with in the first reactant batch can in the first temperature control unit 9, second reactant batch can and are provided with the second temperature control unit 12.
In technique scheme, the connection of under meter, reaction cavity and pneumatic tube is airtight connection, and wherein under meter and reaction cavity are connected respectively by VCR sealing connection 6 and pneumatic tube are airtight.
In technique scheme, by seal with elastometic washer between cavity door and reaction cavity, when opening with cavity door during taking-up reaction substrate during placing response substrate in reaction cavity.
In technique scheme, described reaction cavity arranges pressure transmitter, for monitoring the pressure (not marking in figure) in reaction cavity.
Below to prepare Ta
2o
5atomic layer level thin film is that example illustrates working mechanism of the present invention:
Placing response substrate (i.e. reactive group bottom material) in reaction cavity, whole system N
2as carrier gas, export simultaneously and use vacuum pump evacuation always, make cavity internal pressure at 1torr (being equivalent to 133.3pa).It is 20sccm that two under meters all arrange flow.Hold liquid five (dimethylamino) tantalum in first reactant batch can, in the second reactant batch can, hold liquid H
2o, the presoma of five (dimethylamino) tantalums and water reaction.By the switch of time variable control electrically-controlled valve, what presoma produced is brought in reaction cavity at the steam of reactant batch can upper end by carrier gas, remain on 60-65 DEG C by the first and second temperature control units to make the first reactant batch can, the second reactant batch can remains on 30-40 DEG C; By the 3rd temperature control unit to make in reaction cavity temperature for 150-300 DEG C.
The mode of preiodic type deposition is adopted to carry out Ta
2o
5the deposition of atomic layer level thin film, one-period is made up of following four consecutive steps, i.e. Ta
2o
5a growth cycle of atomic layer level thin film:
(1) first electrically-controlled valve is opened, second electrically-controlled valve is closed, and five (dimethylamino) tantalum steam is brought into reaction cavity by rare gas element, and five (dimethylamino) tantalum is adsorbed on reactive group bottom material, form the saturated film of one deck, the time of passing into is 0.1-5s;
(2) first electrically-controlled valve are closed, second electrically-controlled valve is closed, enter reaction cavity with rare gas element gas to clean, namely rare gas element is utilized to remove Ta (NMe2) 5 unnecessary in reaction chamber, purification cavity, purged by reactant unnecessary in cavity, be pumped away, the time of passing into is 5-20s;
(3) first electrically-controlled valve are closed, and the second electrically-controlled valve is opened, and water vapour is brought into reaction cavity by rare gas element, and are adsorbed on five on reactive group bottom material (dimethylamino) tantalum generation chemical reaction, form Ta
2o
5atomic layer level thin film, the time of passing into is 0.01-1s;
(4) first electrically-controlled valve are closed, and the second electrically-controlled valve is closed, and enter reaction cavity with rare gas element gas and again clean, the time of passing into is 10-30s.
FTO conductive glass is selected to be reactive group bottom material, FTO conductive glass is the fin oxide condutire glass of doped with fluorine, producer is that Wuhan lattice are difficult to understand, nitrogen is selected in carrier gas, deposits according to the method described above, then uses transmission electron microscope (model is NEC JEM-2100F) to characterize, test condition is 200Kv, magnification is 1000k times, as shown in Figure 2, and known unbodied Ta
2o
5film is evenly coated on substrate material surface, and thickness is at nano level.
Above to invention has been exemplary description; should be noted that; when not departing from core of the present invention, any simple distortion, amendment or other those skilled in the art can not spend the equivalent replacement of creative work all to fall into protection scope of the present invention.
Claims (10)
1. an atomic layer deposition apparatus, is characterized in that, comprising: inertial gas tank, variable valve, pneumatic tube, first-class gauge, second gauge, the first electrically-controlled valve, the first reactant batch can, the second electrically-controlled valve, second reactant batch can, vacuum pump, reaction cavity, wherein:
Described inertial gas tank connects the inlet mouth of first-class gauge and the inlet mouth of second gauge respectively by pneumatic tube, and the air outlet place of inertial gas tank is provided with variable valve; The air outlet of first-class gauge is connected with the inlet mouth of reaction cavity respectively by pneumatic tube with the air outlet of second gauge, and the air outlet of reaction cavity is connected with vacuum pump;
Air delivering pipeline between the air outlet and the inlet mouth of reaction cavity of first-class gauge is also provided with the first reactant batch can, and the first reactant batch can is connected by the first electrically-controlled valve and pneumatic tube; Air delivering pipeline between the air outlet and the inlet mouth of reaction cavity of second gauge is provided with the second reactant batch can, and the second reactant batch can is connected by the second electrically-controlled valve and pneumatic tube;
Be provided with the first temperature control unit in first reactant batch can, in the second reactant batch can, be provided with the second temperature control unit, the 3rd temperature control unit is set in reaction cavity.
2. a kind of atomic layer deposition apparatus according to claim 1, is characterized in that, described reaction cavity arranges pressure transmitter.
3. a kind of atomic layer deposition apparatus according to claims 1 or 2, is characterized in that, described first reactant batch can and the second reactant batch can are vertically placed.
4. a kind of atomic layer deposition apparatus according to claims 1 or 2, is characterized in that, described reaction cavity is provided with cavity door, between reaction cavity and cavity door, is provided with rubber seal.
5. a kind of atomic layer deposition apparatus according to claims 1 or 2, is characterized in that, described first-class gauge, second gauge is tightly connected with pneumatic tube respectively.
6. a kind of atomic layer deposition apparatus according to claim 5, is characterized in that, described first-class gauge, and second gauge adopts VCR sealing connection to be connected with pneumatic tube respectively.
7. a kind of atomic layer deposition apparatus according to claims 1 or 2, is characterized in that, described reaction cavity and pneumatic tube are tightly connected.
8. a kind of atomic layer deposition apparatus according to claim 7, is characterized in that, described reaction cavity and pneumatic tube adopt VCR sealing connection to be connected.
9. a kind of atomic layer deposition apparatus as described in claim 1 or 2 is at Ta
2o
5application in atomic layer level thin film preparation, is characterized in that, holds liquid five (dimethylamino) tantalum, hold liquid H in the second reactant batch can in the first reactant batch can
2o, remain on 60-65 DEG C by the first and second temperature control units to make the first reactant batch can, the second reactant batch can remains on 30-40 DEG C; For 150-300 DEG C, the mode of preiodic type deposition is adopted to carry out Ta to make temperature in reaction cavity by the 3rd temperature control unit
2o
5the deposition of atomic layer level thin film, one-period is made up of following four consecutive steps, i.e. Ta
2o
5a growth cycle of atomic layer level thin film:
(1) first electrically-controlled valve is opened, and the second electrically-controlled valve is closed, and five (dimethylamino) tantalum steam is brought into reaction cavity by rare gas element, and five (dimethylamino) tantalum is adsorbed on reactive group bottom material, forms the saturated film of one deck;
(2) first electrically-controlled valve are closed, and the second electrically-controlled valve is closed, and enters reaction cavity clean with rare gas element gas, namely rare gas element is utilized to remove five (dimethylamino) tantalum unnecessary in reaction chamber, purification cavity, purges reactant unnecessary in cavity, is pumped away;
(3) first electrically-controlled valve are closed, and the second electrically-controlled valve is opened, and water vapour is brought into reaction cavity by rare gas element, and are adsorbed on five on reactive group bottom material (dimethylamino) tantalum generation chemical reaction, form Ta
2o
5atomic layer level thin film;
(4) first electrically-controlled valve are closed, and the second electrically-controlled valve is closed, and enters reaction cavity again clean with rare gas element gas.
10. application according to claim 9, is characterized in that, described rare gas element is nitrogen, helium or argon gas; In described preiodic type depositional mode, the time that passes in step (1) is 0.1-5s; The time that passes in step (2) is 5-20s; The time that passes in step (3) is 0.01-1s; The time that passes in step (4) is 10-30s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410749459.1A CN104532210A (en) | 2014-12-09 | 2014-12-09 | Atomic layer deposition equipment and application |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410749459.1A CN104532210A (en) | 2014-12-09 | 2014-12-09 | Atomic layer deposition equipment and application |
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| CN104532210A true CN104532210A (en) | 2015-04-22 |
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| CN201410749459.1A Pending CN104532210A (en) | 2014-12-09 | 2014-12-09 | Atomic layer deposition equipment and application |
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Cited By (8)
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| CN105353680A (en) * | 2015-11-19 | 2016-02-24 | 许昌学院 | Control equipment for atomic layer deposition instrument |
| CN107119264A (en) * | 2017-06-14 | 2017-09-01 | 东南大学 | Iridium alumina high temperature coating apparatus and technique are deposited with chamber In-situ reaction |
| CN107460450A (en) * | 2015-11-11 | 2017-12-12 | 南通大学 | For the device for the gallium aluminium acid bismuth thin film for preparing content gradually variational |
| CN107460452A (en) * | 2015-11-11 | 2017-12-12 | 南通大学 | Organo-aluminium, the miscible formula in gallium source prepare the device of gallium aluminium acid bismuth thin film |
| CN107475687A (en) * | 2015-11-11 | 2017-12-15 | 南通大学 | Prepare BiGaO3The reaction unit of thin-film material |
| CN107868944A (en) * | 2017-10-31 | 2018-04-03 | 北京北方华创微电子装备有限公司 | A kind of titanium nitride apparatus for atomic layer deposition and its deposition process |
| CN109576674A (en) * | 2018-12-25 | 2019-04-05 | 北京北方华创微电子装备有限公司 | Atomic layer deposition apparatus |
| CN112538615A (en) * | 2020-11-16 | 2021-03-23 | 武汉新芯集成电路制造有限公司 | Liquid source storage system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107868944A (en) * | 2017-10-31 | 2018-04-03 | 北京北方华创微电子装备有限公司 | A kind of titanium nitride apparatus for atomic layer deposition and its deposition process |
| CN107868944B (en) * | 2017-10-31 | 2020-02-07 | 北京北方华创微电子装备有限公司 | Titanium nitride atomic layer deposition device and deposition method thereof |
| CN109576674A (en) * | 2018-12-25 | 2019-04-05 | 北京北方华创微电子装备有限公司 | Atomic layer deposition apparatus |
| CN112538615A (en) * | 2020-11-16 | 2021-03-23 | 武汉新芯集成电路制造有限公司 | Liquid source storage system |
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