CN202193841U - Novel atomic layer depositing equipment - Google Patents
Novel atomic layer depositing equipment Download PDFInfo
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- CN202193841U CN202193841U CN2011202714633U CN201120271463U CN202193841U CN 202193841 U CN202193841 U CN 202193841U CN 2011202714633 U CN2011202714633 U CN 2011202714633U CN 201120271463 U CN201120271463 U CN 201120271463U CN 202193841 U CN202193841 U CN 202193841U
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Abstract
The utility model discloses novel atomic layer depositing equipment, which comprises an air loading pipeline, a reaction source pipeline, a reaction cavity body, an exhaust tube and a vacuum pump. The air loading pipeline is communicated with a reaction source; the reaction source pipeline is communicated with the reaction source and the reaction cavity body respectively; the exhaust pipeline is communicated with the reaction cavity body and the vacuum pump respectively; a closed type outer layer sealing ring and an inner layer sealing ring are arranged on the reaction cavity body; a sealing channel is formed among the outer surface part, the outer layer sealing ring, the inner layer sealing ring and a closed cabin door of the reaction cavity body, and is communicated with a sealing channel air inlet pipeline and a sealing channel exhaust pipeline respectively, wherein the outer surface part is between the outer layer sealing ring and the inner layer sealing ring on the outer layer sealing ring, the inner layer of sealing ring and the reaction cavity body; the sealing channel exhaust pipeline is communicated with the exhaust pipeline; and a flow regulating device is arranged on the exhaust pipeline. The novel atomic layer depositing equipment can provide excellent sealing performance and has an excellent depositing effect on a three-dimensional structure with complex height breadth depth ratio.
Description
Technical field
The utility model relates to a kind of novel atomic layer deposition apparatus.
Background technology
(Atomic Layer Deposition ALD), claims atomic layer epitaxy (Atomic Layer Epitaxy) again to ald, is at first to be proposed and be used for polycrystalline fluorescent material ZnS:Mn and amorphous Al by the Finland scientist
2O
3The development of insulating film, previous materials are applied to flat-panel monitor mostly.Because this technology relates to complex surfaces chemical process and low deposition speed, in the middle and later periods eighties in last century, this technology does not obtain substantive breakthroughs.Up to the mid-90 in 20th century, along with the demand for development device of microelectronics and deep-submicron chip technology and the size of material constantly reduce, and the depth-width ratio in the device constantly increases, and employed like this material thickness is reduced to the order of magnitude of several nanometers.Therefore, the advantage of technique for atomic layer deposition is able to embody, deposit one by one like monoatomic layer, and settled layer utmost point homogeneous thickness, and excellent consistence etc., the slow deficiency of sedimentation velocity has also receded into the background.
At present, atomic layer deposition apparatus mostly need react under vacuum condition.In order to realize vacuum condition, other parts except that hatch door of reaction cavity are not owing to need frequent unlatching, thereby the mode that can adopt atmosphere such as welding to be difficult to reveal realizes sealing; For the hatch door that needs are often opened, generally adopt one deck elastic sealed body such as cushion rubber to wait and realize sealing.But sealing mode effect is relatively poor, and gases such as the oxygen in the atmosphere, water vapour get into reaction cavity through hatch door easily, makes to contain oxygen element in the non-oxidized substance film of preparation and can't guarantee the purity of film, thereby influences the quality and the function of film.
Secondly, can also reaction cavity or hatch door be sealed in the glove box or cavity of secluding air, get into this reaction cavity to prevent atmosphere.But, increase the cost that extra glove box or cavity can improve equipment greatly, cause device structure complicated and be difficult to safeguard, also increased the occupation of land space of equipment.
Once more, can also adopt metallic seal to realize the sealing of hatch door.But it is disposable that metal o-ring is merely.Very inconvenience is installed, also causes material and temporal significant wastage.
In addition; In the very big form ratio of deposition (＞1: during 100) complex three-dimensional structure; Generally need be with breaking off between vacuum-pumping system and the reaction cavity; Thereby air-bleed system disconnection afterreaction source can rest on and increase the reaction times in the reaction cavity, thereby the pressure change has improved the fully coating of reaction source to the ability realization three-dimensional structure of big form ratio inside configuration diffusions such as deep hole groove greatly in the while cavity.But this mode can be assembled between valve pipeline owing to broken off the refluence that air-bleed system can cause reaction source simultaneously, and long-time use can cause the valve blockage to influence the work-ing life of equipment.And, in the process of stopping valve switch, will cause the fluctuation of pumping speed very greatly, thereby influence the thin film deposition quality owing to variations in flow.
The utility model content
In view of this, the main purpose of the utility model is to provide a kind of novel atomic layer deposition apparatus, and excellent sealing performance can be provided, and has good deposition effect for the complex three-dimensional structure of high form ratio.
For achieving the above object; The technical scheme of the utility model is achieved in that a kind of novel atomic layer deposition apparatus; Comprise: gas-carrier pipeline, reaction source pipeline, reaction cavity, bleed line and vacuum pump; Said gas-carrier pipeline is connected with reaction source, and said reaction source pipeline is connected with said reaction source and said reaction cavity respectively, and said bleed line is connected with said reaction cavity and said vacuum pump respectively; Said reaction cavity is provided with the outer sealing-ring and the internal layer sealing-ring of closed form; Wherein, Between the closed hatch door of outer surface part between said outer sealing-ring and the said internal layer sealing-ring and said reaction cavity, form seal channel on said outer sealing-ring, said internal layer sealing-ring, the said reaction cavity; Said seal channel is connected with seal channel admission passage and seal channel bleed line respectively, and said seal channel bleed line is connected with said bleed line; Said bleed line is provided with flow regulation device.
Further, vacuumize to said seal channel feeding rare gas element or to said seal channel through said seal channel admission passage and said seal channel bleed line.
Further, said bleed line is provided with stopping valve, and said flow regulation device is parallelly connected with said stopping valve.
Further, said bleed line is provided with stopping valve, and said flow regulation device is connected with said stopping valve, and said flow regulation device is between said reaction cavity and said stopping valve.
Further, also be respectively arranged with said flow regulation device on said gas-carrier pipeline, said seal channel admission passage and the said seal channel bleed line.
Further, said flow regulation device is manual valve or manual mass flowmeter.
Further, said reaction cavity is provided with the groove of two closed forms, and said outer sealing-ring and said internal layer sealing-ring are placed in respectively in the said groove.
Further, said outer sealing-ring and said internal layer sealing-ring are processed by resilient material, and the cross-sectional shape of said outer sealing-ring and said internal layer sealing-ring is circular, oval or star-like.
Further, also be provided with the tail gas adsorption unit on the said bleed line, said tail gas adsorption unit is arranged at the end near said reaction cavity of said bleed line.
Further; Be provided with temp probe and heating/refrigeration plant on said gas-carrier pipeline, said reaction source pipeline, said inert gas inleting pipe road, said reaction cavity, said bleed line and the said rare gas element bleed line, said temp probe is connected with said heating/refrigeration plant.
Compared with prior art; The novel atomic layer deposition apparatus of the utility model has adopted double-layer seal circle (internal layer sealing-ring and outer sealing-ring); Can be for reaction cavity provide excellent sealing performance, the high vacuum that adopts the individual layer sealing-ring to be difficult to reach usually is easy to reach after having adopted the double-layer seal circle; Vacuumize or feed protection of inert gas between the double-layer seal circle, significantly reduced the chance that atmosphere gets into reaction cavity, improved the purity and the quality of deposit film; Compare with the mode of sealing means that increases a glove box or cavity and employing metallic seal, the double-layer seal circle is simple, has practiced thrift hardware cost and maintenance cost widely.
In addition, the novel atomic layer deposition apparatus of the utility model is provided with flow regulation device on bleed line, has avoided stopping valve to close phenomenons such as the refluence of afterreaction source, gathering; And, avoided the variations in flow that causes in the stopping valve switching process, make pumping speed more stable, thereby improved the thin film deposition quality.
Description of drawings
Fig. 1 is the structural representation of the novel atomic layer deposition apparatus of the utility model;
Fig. 2 is the structural representation of the double-layer seal circle of the utility model;
Fig. 3 is the cross-sectional schematic along C-C line among Fig. 2.
Embodiment
Technology contents of relevant the utility model and detailed description, existing accompanying drawings is following.
As shown in Figure 1; The utility model provides a kind of novel atomic layer deposition apparatus, comprising: flow regulation device 1, gas-carrier pipeline 2, ald valve 3, reaction source pipeline 4, seal channel admission passage 5, flow regulation device 6, outer sealing-ring 7, reaction cavity 8, internal layer sealing-ring 9, bleed line 10, flow regulation device 11, seal channel bleed line 12, tail gas adsorption unit 13, flow regulation device 14, stopping valve 15 and vacuum pump 16.Wherein:
Gas-carrier pipeline 2 is connected with reaction source a, and gas-carrier pipeline 2 is provided with flow regulation device 1, in order to regulate the flow of carrier gas (can be rare gas element) in the gas-carrier pipeline 2;
Reaction source pipeline 4 is connected with reaction source a and reaction cavity 8 respectively, and reaction source pipeline 4 is provided with ald valve 3, gets into/stop through reaction source pipeline 4 in order to control reaction source a to get into reaction cavity 8; Ald valve 3 is corresponding one by one with reaction source a, and promptly reaction source a is a multichannel, and the quantity of ald valve 3 should be identical with the quantity of reaction source a;
Be provided with pressure detection means in the reaction cavity 8, in order to the intravital pressure in detection reaction chamber; Also be provided with the outer sealing-ring 7 and the internal layer sealing-ring 9 of closed form on the reaction cavity 8; Like Fig. 2 and shown in Figure 3; Wherein, Between the closed hatch door of outer surface part between outer sealing-ring 7 and the internal layer sealing-ring 9 and reaction cavity 8, form seal channel on outer sealing-ring 7, internal layer sealing-ring 9, the reaction cavity 8; Said seal channel is connected with seal channel admission passage 5 and seal channel bleed line 12 respectively, and seal channel admission passage 5 can be connected with inert gas source, and seal channel bleed line 12 is connected with bleed line 10;
Further, feed rare gas element through seal channel admission passage 5 and seal channel bleed line 12 to said seal channel; Can also vacuumize said seal channel, all can improve sealing property.
Further, the flow regulation device 14 on the bleed line 10 is parallelly connected with stopping valve 15; Flow regulation device 14 can also be connected with stopping valve 15, and flow regulation device 14 (being the upper reaches of stopping valve 15 on the bleed line 10) between reaction cavity 8 and stopping valve 15.When depositing the complex three-dimensional structure of very big form ratio, need close stopping valve 15, then can only adopt parallel way, promptly according to the detection numerical value of said pressure detection means, adjust the internal pressure of reaction cavities 8 through flow regulation device 14; When the deposition common product, can not close stopping valve 15, then can adopt parallel way or series system, when series connection, according to the detection numerical value of said pressure detection means, through the internal pressure of flow regulation device 14 and stopping valve 15 adjustment reaction cavities 8.
Further, seal channel admission passage 5 is provided with flow regulation device 6, in order to regulate the flow of rare gas element in the seal channel admission passage 5; Seal channel bleed line 12 is provided with flow regulation device 11, in order to regulate the flow of rare gas element in the seal channel bleed line 12.
Further, flow regulation device 1, flow regulation device 6, flow regulation device 11 and flow regulation device 14 can be manual valve or manual mass flowmeter.
Further; Reaction cavity 8 is provided with the groove of two closed forms; Outer sealing-ring 7 and internal layer sealing-ring 9 are placed in respectively in the said groove; And then be embedded on reaction cavity 8, not as limit, outer sealing-ring 7 and internal layer sealing-ring 9 can also be set on the reaction cavity 8 through other modes that is fit to.Said groove can be for annular, square etc.
Further, outer sealing-ring 7 and internal layer sealing-ring 9 are processed by resilient material, and cross-sectional shape can be circle, ellipse, star-like etc.
Further; Also be provided with tail gas adsorption unit 13 on the bleed line 10; Tail gas adsorption unit 13 is arranged at the end near reaction cavity 8 (being the upper reaches of flow regulation device 14 on the bleed line 10, stopping valve 15 and vacuum pump 16) of bleed line 10; In order to the reaction source a that contains among the tail gas b behind the filtering reaction, in case fluid stopping quantity regulating device 14, stopping valve 15 and vacuum pump 16 are realized protection by reaction source a corrosion.
Further; Be provided with temp probe and heating/refrigeration plant on gas-carrier pipeline 2, reaction source pipeline 4, inert gas inleting pipe road 5, reaction cavity 8, bleed line 10 and the rare gas element bleed line 12; Said temp probe is connected with said heating/refrigeration plant; In order to control the temperature of above-mentioned pipeline and reaction cavity 8, the temperature condition in the time of can making it reach preferable working order.
Each integral part in the utility model is commercially available matured product, and its structure and use are easy to understood and grasp by those skilled in the art, repeat no more at this.
The utility model atomic layer deposition apparatus in use; After will treating that deposited product is put into reaction cavity 8; The hatch door of off-response cavity 8; Between outer surface part between outer sealing-ring 7 and the internal layer sealing-ring 9 and hatch door, form seal channel on then outer sealing-ring 7, internal layer sealing-ring 9, the reaction cavity 8, said seal channel is charged into rare gas element or vacuumizes, can good sealing effectiveness of time limit.According to the detection numerical value of said pressure detection means, adjust the internal pressure of reaction cavity 8 through flow regulation device 14, make pumping speed more stable, thereby improved the thin film deposition quality.
The above is merely the preferred embodiment of the utility model, is not the protection domain that is used to limit the utility model.
Claims (10)
1. novel atomic layer deposition apparatus; Comprise: gas-carrier pipeline, reaction source pipeline, reaction cavity, bleed line and vacuum pump; Said gas-carrier pipeline is connected with reaction source; Said reaction source pipeline is connected with said reaction source and said reaction cavity respectively, and said bleed line is connected with said reaction cavity and said vacuum pump respectively; It is characterized in that; Said reaction cavity is provided with the outer sealing-ring and the internal layer sealing-ring of closed form; Wherein, Between the closed hatch door of outer surface part between said outer sealing-ring and the said internal layer sealing-ring and said reaction cavity, form seal channel on said outer sealing-ring, said internal layer sealing-ring, the said reaction cavity; Said seal channel is connected with seal channel admission passage and seal channel bleed line respectively, and said seal channel bleed line is connected with said bleed line; Said bleed line is provided with flow regulation device.
2. novel atomic layer deposition apparatus as claimed in claim 1 is characterized in that, vacuumizes to said seal channel feeding rare gas element or to said seal channel through said seal channel admission passage and said seal channel bleed line.
3. novel atomic layer deposition apparatus as claimed in claim 1 is characterized in that said bleed line is provided with stopping valve, and said flow regulation device is parallelly connected with said stopping valve.
4. novel atomic layer deposition apparatus as claimed in claim 1; It is characterized in that; Said bleed line is provided with stopping valve, and said flow regulation device is connected with said stopping valve, and said flow regulation device is between said reaction cavity and said stopping valve.
5. novel atomic layer deposition apparatus as claimed in claim 1 is characterized in that, also is respectively arranged with said flow regulation device on said gas-carrier pipeline, said seal channel admission passage and the said seal channel bleed line.
6. novel atomic layer deposition apparatus as claimed in claim 5 is characterized in that, said flow regulation device is manual valve or manual mass flowmeter.
7. novel atomic layer deposition apparatus as claimed in claim 1 is characterized in that said reaction cavity is provided with the groove of two closed forms, and said outer sealing-ring and said internal layer sealing-ring are placed in respectively in the said groove.
8. novel atomic layer deposition apparatus as claimed in claim 1 is characterized in that, said outer sealing-ring and said internal layer sealing-ring are processed by resilient material, and the cross-sectional shape of said outer sealing-ring and said internal layer sealing-ring is circular, oval or star-like.
9. novel atomic layer deposition apparatus as claimed in claim 1 is characterized in that, also is provided with the tail gas adsorption unit on the said bleed line, and said tail gas adsorption unit is arranged at the end near said reaction cavity of said bleed line.
10. novel atomic layer deposition apparatus as claimed in claim 1; It is characterized in that; Be provided with temp probe and heating/refrigeration plant on said gas-carrier pipeline, said reaction source pipeline, said inert gas inleting pipe road, said reaction cavity, said bleed line and the said rare gas element bleed line, said temp probe is connected with said heating/refrigeration plant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202714633U CN202193841U (en) | 2011-07-28 | 2011-07-28 | Novel atomic layer depositing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202714633U CN202193841U (en) | 2011-07-28 | 2011-07-28 | Novel atomic layer depositing equipment |
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| Publication Number | Publication Date |
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| CN202193841U true CN202193841U (en) | 2012-04-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011202714633U Expired - Lifetime CN202193841U (en) | 2011-07-28 | 2011-07-28 | Novel atomic layer depositing equipment |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102703882A (en) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | Method for reducing ALD (atom layer deposition) process pipeline particles |
| WO2014121450A1 (en) * | 2013-02-05 | 2014-08-14 | Wang Dongjun | Roll-to-roll type atomic layer deposition equipment and method of use thereof |
| CN103993295A (en) * | 2014-05-15 | 2014-08-20 | 无锡迈纳德微纳技术有限公司 | Micro accurate coating system |
| CN104532210A (en) * | 2014-12-09 | 2015-04-22 | 天津大学 | Atomic layer deposition equipment and application |
| CN108677165A (en) * | 2018-05-28 | 2018-10-19 | 滁州国凯电子科技有限公司 | A kind of novel ALD equipment precursor source carrier gas heating means |
| CN109423621A (en) * | 2017-08-22 | 2019-03-05 | 北京北方华创微电子装备有限公司 | A kind of novel oxidized al atomic layer precipitation equipment and its deposition method |
-
2011
- 2011-07-28 CN CN2011202714633U patent/CN202193841U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102703882A (en) * | 2012-05-22 | 2012-10-03 | 上海华力微电子有限公司 | Method for reducing ALD (atom layer deposition) process pipeline particles |
| WO2014121450A1 (en) * | 2013-02-05 | 2014-08-14 | Wang Dongjun | Roll-to-roll type atomic layer deposition equipment and method of use thereof |
| CN103993295A (en) * | 2014-05-15 | 2014-08-20 | 无锡迈纳德微纳技术有限公司 | Micro accurate coating system |
| CN104532210A (en) * | 2014-12-09 | 2015-04-22 | 天津大学 | Atomic layer deposition equipment and application |
| CN109423621A (en) * | 2017-08-22 | 2019-03-05 | 北京北方华创微电子装备有限公司 | A kind of novel oxidized al atomic layer precipitation equipment and its deposition method |
| CN108677165A (en) * | 2018-05-28 | 2018-10-19 | 滁州国凯电子科技有限公司 | A kind of novel ALD equipment precursor source carrier gas heating means |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120418 |
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| CX01 | Expiry of patent term |