CN109576674A - Atomic layer deposition apparatus - Google Patents
Atomic layer deposition apparatus Download PDFInfo
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- CN109576674A CN109576674A CN201811587575.2A CN201811587575A CN109576674A CN 109576674 A CN109576674 A CN 109576674A CN 201811587575 A CN201811587575 A CN 201811587575A CN 109576674 A CN109576674 A CN 109576674A
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- Prior art keywords
- source bottle
- presoma
- air inlet
- inlet pipe
- main air
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The invention discloses a kind of atomic layer deposition apparatus, the control device in main air inlet pipe road, the supply source bottle and recycling source bottle and the temperature for controlling supply source bottle and recycling source bottle that are respectively connected to main air inlet pipe road including reaction chamber and connection reaction chamber, when main air inlet pipe road is opened, supply source bottle provides the first presoma, and carrier gas carries the first presoma and is passed through reaction chamber through main air inlet pipe road；When main air inlet pipe road is closed, supply source bottle and the recovered pipeline connection of recycling source bottle, recycling source bottle carry out condensing recovery to the first presoma that supply source bottle provides, realize the recycling and storage of presoma.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate more specifically to a kind of atomic layer deposition apparatus.
Background technique
Tantalum nitride (Tantalum nitride, TaN) is because of thermal stability with higher, high-melting-point, excellent electric conductivity
And the features such as adhesiveness, a kind of good barrier material in the field IC is become, such as applied to copper diffusion barrier layer
(copper diffusion barrier)。
Physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) and chemical vapor deposition (Chemical
Vapor Deposition, CVD) it is the main method for depositing TaN film.It is former but compared with traditional film deposition techniques
Sublayer deposition technique (ALD) is because having accurately film control, excellent uniformity, step coverage height and film densification etc.
Many merits and be concerned by people.The skill being continuously improved especially with the reduction of device feature size, hole depth-to-width ratio
Under art development trend, the TaN film of atomic layer deposition has wider array of application prospect.
Atomic layer deposition is by the way that precursors pulse is alternately passed through reaction chamber and on substrate chemisorption
And react and formed a kind of technology of deposition film.When precursors reach substrate surface, they can be in its chemical absorption of surface
And surface reaction occurs.
Atomic layer deposition prepare TaN presoma mainly include tantalum halide, such as it is tantalum pentafluoride (TaF5), phosphoric
Tantalum (TaCl5) etc. or organic metal tantalum compound, such as tert-butyl imido three (lignocaine) tantalum (TBTDET), five (diformazan ammonia
Base) tantalum (PDMAT) and five (lignocaine) tantalums (PDEAT) etc..Nitrogen source is used as using NH3, N2/H2 mixed gas etc. simultaneously, it will
Reaction temperature and deposition pressure control respectively to be reacted in 200 DEG C~300 DEG C and 1~8torr.
Existing atomic layer deposition apparatus has deficiency below: in ALD deposition reaction, in order to guarantee that it is good that presoma has
There is biggish fluctuation, shadow in good mobility, and the amount for leading to be passed through the presoma in reaction chamber that prevents from building the pressure because of air-flow
Ring the quality for preparing film.Presoma is often passed through reaction chamber using when driving body deposition before necessary in technique, is not needed
Presoma directly discharges it into the technology mode of vacuum pump when depositing, substantially increase the consumption of presoma, improve industry
The cost of production.
Summary of the invention
In view of this, will can not be passed through reaction chamber the purpose of the present invention is to provide a kind of atomic layer deposition apparatus
Presoma recycling, improves the utilization rate of presoma, reduces industrial production cost.
A kind of atomic layer deposition apparatus provided according to embodiments of the present invention, comprising: reaction chamber and the connection reaction
The main air inlet pipe road of chamber；Supply source bottle and recycling source bottle, are respectively connected to the main air inlet pipe road；And control device, it is used for
Control the temperature of the supply source bottle and recycling source bottle, wherein when the main air inlet pipe road is opened, before carrier gas carries first
Drive body and be passed through the reaction chamber through the main air inlet pipe road, the supply source bottle provides first presoma, the master into
When feed channel is closed, the supply source bottle and the recovered pipeline connection of recycling source bottle, the recycling source bottle is to the supply
First presoma that source bottle provides carries out condensing recovery.
Preferably, the supply source bottle accesses the main air inlet pipe road through the first transmission pipeline, and the recycling source bottle is through the
Two transmission pipelines access the main air inlet pipe road, first transmission pipeline, second transmission pipeline and the main air inlet pipe
The opening and closing in road are controlled by first to third valve.
Preferably, when the content of first presoma in the supply source bottle is lower than given threshold, the supply
Source bottle and recycling source bottle exchange function.
Preferably, the control device includes: the first thermal module, for controlling the temperature of the supply source bottle, so that
First presoma is in gaseous state in the supply source bottle；And second temperature module, for controlling the recycling source bottle
Temperature, so that first presoma is in a liquid state in the recycling source bottle or solid-state.
Preferably, the control device further include: third thermal module, for controlling the main air inlet pipe road, described
The temperature of one transmission pipeline and second transmission pipeline, so that the main air inlet pipe road, first transmission pipeline and institute
State the second transmission pipeline transmission gaseous material.
Preferably, the atomic layer deposition apparatus further include: vacuum pump and the main exhaust being connected to the vacuum pump
Road；And first exhaust pipeline, it is connected between the recycling source bottle and the vacuum pump, when the main air inlet pipe road is closed
When, the recycling source bottle discharges the carrier gas through the first exhaust pipeline and the main exhaust pipeline.
Preferably, the atomic layer deposition apparatus further includes third transmission pipeline, and purge gas is transmitted via the third
Pipeline and main air inlet pipe road enter the reaction chamber and purge the reaction chamber.
Preferably, the atomic layer deposition apparatus further includes the 4th transmission pipeline, and the second presoma is passed via the described 4th
Defeated pipeline enters the reaction chamber, and second presoma is used to generate film with the first forerunner precursor reactant.
Preferably, the atomic layer deposition apparatus further includes second exhaust pipeline, when the 4th transmission pipeline is closed, institute
It states the second presoma and enters the vacuum pump via the second exhaust pipeline.
Preferably, first presoma is metal precursor.
Atomic layer deposition apparatus provided in an embodiment of the present invention includes supply source bottle, recycling source bottle and supplies for controlling
The control device of the temperature of source bottle and recycling source bottle.When main air inlet pipe road is opened, supply source bottle provides the first presoma, carrier gas
It carries the first presoma and is passed through reaction chamber through main air inlet pipe road；When main air inlet pipe road is closed, supply source bottle and recycling source bottle
Recovered pipeline connection, recycling source bottle carry out condensing recovery to the first presoma that supply source bottle provides, and realize returning for presoma
It receives and stores.
In a preferred embodiment, when the content of the first presoma in supply source bottle is lower than given threshold, supply source
Bottle is with recycling source bottle exchange function, it can be achieved that the multiple recycling of presoma, improves the utilization rate of presoma, reduce industrial production
Cost.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from.
Fig. 1 shows the structural schematic diagram of atomic layer deposition apparatus according to prior art；
Fig. 2 shows the saturated vapor pressure curve schematic diagrames of PDMAT；
Fig. 3 shows the flow diagram of Atomic layer deposition method according to prior art；
Fig. 4 shows the structural schematic diagram of atomic layer deposition apparatus according to a first embodiment of the present invention；
Fig. 5 shows the flow diagram of Atomic layer deposition method according to a second embodiment of the present invention.
It include: reaction chamber 1 in figure；Gas distributing device 2；Heating pedestal 3；Substrate 4；Source bottle 5；First source bottle 51；The
Two sources bottle 52；Butterfly valve 6；Vacuum pump 7；Second presoma 11；First gas 12；Second gas 13；Main air inlet pipe road 31；Main exhaust
Pipeline 32；Transmission pipeline 33,36,37,371,372,373 and 374；Exhaust pipe 321,322,34 and 35；Thermal module 41,
42,511,512 and 513；And operated pneumatic valve 211,212,221,222,241,242,23,25,26 and 27.
Specific embodiment
Hereinafter reference will be made to the drawings, and the present invention will be described in more detail.In various figures, identical element is using similar attached
Icon is remembered to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.In addition, may not show in figure
Certain well known parts out.
Many specific details of the invention, such as structure, material, size, the processing work of component is described hereinafter
Skill and technology, to be more clearly understood that the present invention.But it just as the skilled person will understand, can not press
The present invention is realized according to these specific details.
Fig. 1 shows the structural schematic diagram of atomic layer deposition apparatus according to prior art.As shown in Figure 1, atomic layer deposition
Equipment includes reaction chamber 1, source bottle 5, the gas delivery conduit of vacuum pump 7 and connection between the various devices.
Reaction chamber 1 includes gas distributing device 2 (gas distributor, i.e. spray head (showerhead)) and adds
Hot radical seat 3, heating pedestal 3 are used to support substrate 4, and film is deposited on substrate (wafer) 4 in technical process.Source bottle 5 is for filling
Carry the first presoma (such as PDMAT).
One end of transmission pipeline 33 is connected to reaction chamber 1, and the other end is connect with the source bottle equipped with the second presoma 11.The
Two presomas 11 are usually ammonia (NH3), film is generated for chemical reaction to occur with the first presoma (such as PDMAT).
One end of transmission pipeline 37 is connected to source bottle 5, and the other end is connect with the gas source of first gas 12, transmission pipeline 36
One end is connected to main air inlet pipe road 31, and the other end is connect with the gas source of second gas 13.First gas 12 and second gas 13 are logical
Often it is the inert gases such as high pure nitrogen, enters reaction for carrying the first presoma as carrier gas in the first presoma supply stage
Chamber 1 is equably adsorbed on substrate 4 so that the first presoma can sufficiently be spread in reaction chamber 1.Second gas 13 is also
It can be used for after presoma supply terminates purging reaction chamber 1 as purge gas.
Existing atomic layer deposition apparatus further includes main exhaust pipeline 32, exhaust pipe 34 and exhaust pipe 35.Main row
One end of feed channel 32 is connected to main air inlet pipe road 31, and the other end is connected to vacuum pump 7.One end of exhaust pipe 34 is connected to
Two presomas 11, the other end are connected to vacuum pump 7.Reaction chamber 1 is connect by exhaust pipe 35 with vacuum pump 7, and butterfly valve 6 is located at
On exhaust pipe 35, for controlling the pressure in reaction chamber 1.
Thermal module 41 and thermal module 42 are used to distinguish the temperature of voltage input bottle 5 and main air inlet pipe road 31, to guarantee
The first presoma in technical process in source bottle 5 and main air inlet pipe road 31 is gaseous state.
The reaction source that existing ALD deposition tantalum nitride uses is generally PDMAT and ammonia (NH3), since PDMAT is solid-state
Source has lower saturated vapour pressure compared with liquid source.As shown in Fig. 2, PDMAT saturated vapour pressure can reach 1torr at 90 DEG C
(support) left and right；At 10 DEG C, saturated vapour pressure is essentially 0torr.Therefore in atomic layer deposition process, thermal module 41
Temperature is controlled at 90 DEG C or so, and the control of the temperature of thermal module 42 is at 90 DEG C~120 DEG C.
Existing ALD deposition tantalum nitride generally uses the first presoma (such as PDMAT) and the second presoma (such as ammonia) to exist
Substrate surface reactions obtain film, and complete process flow is as shown in Figure 3, comprising the following steps:
In step s101, relative growth parameter is set.It specifically includes: being by the temperature control of atomic layer deposition process
200 DEG C~325 DEG C, set 0.5 support~10 supports for reaction pressure, by first gas 12 and second gas 13 (high pure nitrogen or
Inert gas) transmission rate be set as 10-5000 standard milliliters/minute.
In step s 102, the first presoma (such as PDMAT) enters reaction chamber.It specifically includes: opening valve 21,22 and
23, the first gas 12 (generally 20-1000 standard milliliters/minute) of certain flow carries first by main air inlet pipe road 31
Presoma enters reaction chamber 1.Open simultaneously valve 27, the second gas 13 of certain flow (generally 20-100 standard milliliters/
Minute) mixed in the top of reaction chamber 1 with the first gas 12 for carrying the first presoma by transmission pipeline 36, mixed gas
Enter reaction chamber 1 together.At this point, valve 24 and valve 25 are closed, valve 26 is opened, the second presoma (one of certain flow
As be 200-2000 standard milliliters/minute) vacuum pump 7 is directly discharged by exhaust pipe 34.General first presoma is passed through instead
Saturation absorption can be reached for chamber 5 milliseconds~30 seconds in reaction chamber 1 by answering.
In step s 103, reaction chamber is purged.It specifically includes: on the basis of step S102, closing valve 23, open
Valve 24, second gas 13 (such as nitrogen inert gas) purge reaction chamber 1, and purge time is -3 minutes 1 second.
In step S104, the second presoma (such as ammonia) enters reaction chamber.It specifically includes: in the basis of step S103
On, valve 26 is closed, the second presoma (generally 200-10000 standard milliliters/minute) of Open valve 25, certain flow is logical
It crosses transmission pipeline 33 and is passed through reaction chamber 1.Second presoma, which is passed through reaction chamber 100 milliseconds~30 seconds, to be reached in chamber
Saturation absorption.
In step s105, reaction chamber is purged.Detailed process: on the basis of step S104, valve 25 is closed, is opened
Valve 26, second gas 13 purge reaction chamber 1, and purge time is -30 seconds 1 second.
In step s 106, judge whether film reaches expected thickness, if reaching expected thickness, process ends mistake
Journey；If not up to expected thickness, return step S102.
Atomic layer deposition apparatus provided in an embodiment of the present invention is illustrated referring to the drawings.
Fig. 4 shows the structural schematic diagram of atomic layer deposition apparatus according to a first embodiment of the present invention.As shown in figure 4, former
Sublayer depositing device includes reaction chamber 1, butterfly valve 6, vacuum pump 7, control device, the first source bottle 51 and the second source bottle 52 and connects
Connect the gas delivery conduit between each device.
Reaction chamber 1 includes gas distributing device 2 (gas distributor, i.e. spray head (showerhead)) and adds
Hot radical seat 3, film are deposited on substrate (wafer) 4.Reaction chamber 1 connects butterfly valve 6 and vacuum pump 7, butterfly by exhaust pipe 35
Valve 6 is mainly used for controlling the pressure in reaction chamber 1.Control device is mainly used for controlling in the first source bottle 51 and the second source bottle 52
Temperature.
One end of transmission pipeline 371 and transmission pipeline 372 is connected to main air inlet pipe road 31, and the other end is respectively connected to first
Source bottle 51 and the second source bottle 52, the other end in main air inlet pipe road 31 is connected to reaction chamber 1.
One end of transmission pipeline 373 and transmission pipeline 374 is respectively connected to the first source bottle 51 and the second source bottle 52, the other end
It is connected to the gas source of first gas 12.One end of transmission pipeline 36 is connected to main air inlet pipe road 31, and the other end is connected to the second gas
The gas source of body 13.First gas 12 and second gas 13 are usually the inert gases such as high pure nitrogen, for supplying in the first presoma
The first presoma is carried as carrier gas to the stage and enters reaction chamber 1, so that the first presoma can be abundant in reaction chamber 1
Diffusion is equably adsorbed on substrate 4.Second gas 13 can also be used in after presoma supply terminates as purge gas pair
Reaction chamber 1 is purged.
When main air inlet pipe road 31 is opened, carrier gas carries the first presoma and is passed through the reaction chamber 1 through main air inlet pipe road 31,
One of the first source bottle 51 and the second source bottle 52 provide the first presoma as supply source bottle at this time.When main air inlet pipe road 31 is closed,
It is connected between first source bottle 51 and the second source bottle 52, another in the first source bottle 51 and the second source bottle 52 is right as recycling source bottle
The first presoma that supply source bottle provides carries out condensing recovery.
Using the first source bottle 51 as supply source bottle, for the second source bottle 52 is as recycling source bottle, main air inlet pipe road 31 is opened
When, the first source bottle 51 provides the first presoma to reaction chamber 1 through transmission pipeline 371 and main air inlet pipe road 31.Main air inlet pipe road
When 31 closing, the second source bottle 52 carries out the first presoma in the first source bottle 51 via transmission pipeline 371 and transmission pipeline 372
Condensing recovery, it is ensured that the continuity of the first presoma supply, and can cause to be passed through reaction chamber to avoid because gas builds the pressure
Fluctuation that the amount of the first presoma in room occurs and the quality for influencing film.
Further, control device includes thermal module 511 and thermal module 512, thermal module 511 and thermal module
512 for controlling the temperature of the first source bottle 51 and the second source bottle 52 respectively, so that the first presoma is in gas in supply source bottle
State, is in a liquid state or solid-state in the bottle of the recycling source.
Exemplary, the first source bottle 51 is used as supply source bottle, and the second source bottle 52 passes through thermal module 511 as recycling source bottle
The temperature that the first source bottle 51 is arranged is 90 DEG C, is 10 DEG C by the temperature that the second source bottle 52 is arranged in thermal module 512.Because of PDMAT
It is Solid Source, there is lower saturated vapour pressure compared with liquid source, at 90 DEG C, PDMAT saturated vapour pressure can reach 1torr (support)
Left and right；At 10 DEG C, saturated vapour pressure is essentially 0torr.Therefore gaseous first forerunner can be obtained in the first source bottle 51
Body obtains solid first presoma in the second source bottle 52.
Further, control device further includes thermal module 513, and thermal module 513 is for controlling main air inlet pipe road 31, passing
The temperature of defeated pipeline 371 and transmission pipeline 372, so that main air inlet pipe road 31, transmission pipeline 371 and transmission pipeline 372 transmit
Gaseous material.
Further, atomic layer deposition apparatus further includes exhaust pipe 321, exhaust pipe 322 and main exhaust pipeline 32.
Main exhaust pipeline 32 is connected to vacuum pump 7, and exhaust pipe 321 is connected between the first source bottle 51 and vacuum pump 7, exhaust pipe
322 are connected between the second source bottle 52 and vacuum pump 7.When main air inlet pipe road 31 is closed, recycling source bottle through exhaust pipe 321 or
Exhaust pipe 322 is connected to vacuum pump 7, and supply source bottle and vacuum pump 7 disconnect.
Exemplary, the first source bottle 51 is used as supply source bottle, and the second source bottle 52 is as recycling source bottle, when main air inlet pipe road 31 is disconnected
When opening, extra carrier gas is discharged into vacuum pump 7 through exhaust pipe 322 and main exhaust pipeline 32 by the second source bottle 52.In some implementations
In example, the first source bottle 51 is used as supply source bottle as recycling source bottle, the second source bottle 52, when main air inlet pipe road 31 disconnects, first
Extra carrier gas is discharged into vacuum pump 7 through exhaust pipe 321 and main exhaust pipeline 32 by source bottle 51.
Further, atomic layer deposition apparatus further includes transmission pipeline 33, the second presoma 11 via transmission pipeline 33 into
Enter reaction chamber 1.Second presoma 11 be, for example, ammonia (NH3), on the substrate in reaction chamber 1 with the first presoma
Chemical reaction occurs and generates film.
Atomic layer deposition apparatus further includes exhaust pipe 34, do not need the second presoma participate in reaction when can be by second before
It drives body and vacuum pump 7 is discharged by exhaust pipe 34, guarantee the continuity that the second presoma supplies in technical process.
Further, when the content of the first presoma in supply source bottle is lower than given threshold, the first source bottle and second
Source bottle exchange function.Using the first source bottle 51 as supply source bottle, for the second source bottle 52 is as recycling source bottle, when the first source bottle 51
In the first presoma when exhausting, be 10 DEG C by the temperature that the first source bottle 51 is arranged in thermal module 511, pass through thermal module
The temperature of 512 the second source of setting bottles 52 is 90 DEG C, then before the second source bottle 52 will provide first to reaction chamber 1 as supply source bottle
Drive body, the first source bottle 51 will be as the first presoma for providing of recycling source bottle condensing recovery supply source bottle, then the first source bottle 51
With 52 alternative supplies of bottle of the second source and the first presoma of recycling, it can be achieved that the multiple recycling of presoma, improves the benefit of presoma
With rate.
Fig. 5 shows the process flow chart of Atomic layer deposition method according to a second embodiment of the present invention, hereinafter with reference to Fig. 4
It is illustrated with Atomic layer deposition method of the Fig. 5 to second embodiment of the invention.Wherein, the first source bottle 51 in Fig. 4 is confession
Source bottle is given, the second source bottle 52 is recycling source bottle.As shown in figure 5, Atomic layer deposition method the following steps are included:
In step s 201, relative growth parameter is set.It specifically includes: being by the temperature control of atomic layer deposition process
200 DEG C~325 DEG C, set 0.5 support~10 supports for reaction pressure, by first gas 12 and second gas 13 (high pure nitrogen or
Inert gas) transmission rate be set as 10-5000 standard milliliters/minute.
In step S202, the first presoma (such as PDMAT) enters reaction chamber.It specifically includes: by the first source bottle 51
Temperature setting be 90 DEG C, open valve 221,211 and 23, certain flow first gas 12 (generally 20-1000 standard milli
Liter/min) the first presoma is carried by transmission pipeline 371 and main air inlet pipe road 31 enter reaction chamber 1.Open simultaneously valve
27, the second gas 13 (generally 20-100 standard milliliters/minute) of certain flow is by transmission pipeline 36 in reaction chamber 1
Top is mixed with the carrier gas for carrying the first presoma, and mixed gas enters reaction chamber 1.Valve 241,242 and 25 is simultaneously closed off,
The second presoma (generally 200-2000 standard milliliters/minute) of Open valve 26, certain flow is straight by exhaust pipe 34
Run in into vacuum pump 7.General first presoma is passed through can reach saturation suction for reaction chamber 5 milliseconds~30 seconds in reaction chamber
It is attached.
It in this step, further include the first source when the content of the first presoma in supply source bottle is lower than given threshold
Bottle and the second source bottle exchange function.Such as when the first presoma in the first source bottle 51 exhausts, it is arranged by thermal module 511
The temperature in the first source bottle 51 is 10 DEG C, is 90 DEG C by the temperature that the second source bottle 52 is arranged in thermal module 512, opening valve 222,
212 and 23, close valve 221 and 211.Then the second source bottle 52 will provide the first presoma to reaction chamber 1 as supply source bottle,
First source bottle 51 will be as the first presoma for providing of recycling source bottle condensing recovery supply source bottle, then the first source bottle 51 and second
Source 52 alternative supplies of bottle are with the first presoma of recycling, it can be achieved that the multiple recycling of presoma, improves the utilization rate of presoma.
In step S203, reaction chamber is purged.It specifically includes: on the basis of step S202, closing valve 23, centainly
The second gas 13 (such as nitrogen inert gas) of flow purges reaction chamber 1, and purge time is -3 minutes 1 second.Together
When Open valve 212 and 242, carrier gas carries the first presoma and enters the second source bottle by transmission pipeline 371 and transmission pipeline 372
52 condense again and stay in the second source bottle 52, and extra carrier gas enters vacuum by exhaust pipe 322 and main exhaust pipeline 32
Pump 7.
In step S204, the second presoma enters reaction chamber.It specifically includes: on the basis of step S203, closing
The second presoma (generally 200-10000 standard milliliters/minute) of valve 26, Open valve 25, certain flow passes through transmission
Pipeline 33 enters reaction chamber 1.General second presoma, which is passed through reaction chamber 100 milliseconds~30 seconds, to reach full in chamber
And absorption.
In this step, enter reaction chamber 1 using high-purity reactant ammonia as the second presoma pulse.Using high-purity ammon
Gas does not need inert gas as carrier gas, high-purity ammonia and the PDMAT reaction for being adsorbed on substrate surface and generates tantalum nitride membrane.
In step S205, reaction chamber is purged.Detailed process: on the basis of step S204, valve 25 is closed, is opened
The second gas 13 (such as nitrogen inert gas) of valve 26, certain flow purges reaction chamber 1, purge time 1
- 30 seconds seconds.
In step S206, judge whether film thickness reaches expected thickness, if reaching expected thickness, process ends
Process；If not up to expected thickness, return step S202.
In conclusion atomic layer deposition apparatus provided in an embodiment of the present invention, including supply source bottle, recycling source bottle and
For controlling the control device of the temperature of supply source bottle and recycling source bottle.When main air inlet pipe road is opened, supply source bottle provides the
One presoma, carrier gas carry the first presoma and are passed through reaction chamber through main air inlet pipe road；When main air inlet pipe road is closed, supply source
Bottle and the recovered pipeline connection of recycling source bottle, recycling source bottle carries out condensing recovery to the first presoma that supply source bottle provides, real
The recycling and storage of existing presoma.
In a preferred embodiment, when the first presoma in supply source bottle exhausts, supply source bottle and recycling source bottle function
The multiple recycling, it can be achieved that presoma can be exchanged, the utilization rate of presoma is improved, reduces industrial production cost.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
It is as described above according to the embodiment of the present invention, these embodiments details all there is no detailed descriptionthe, also not
Limiting the invention is only the specific embodiment.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is principle and practical application in order to better explain the present invention, thus belonging to making
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right
The limitation of claim and its full scope and equivalent.
Claims (10)
1. a kind of atomic layer deposition apparatus characterized by comprising
Reaction chamber and the main air inlet pipe road for connecting the reaction chamber；
Supply source bottle and recycling source bottle, are respectively connected to the main air inlet pipe road；And
Control device, for controlling the temperature of the supply source bottle and recycling source bottle,
Wherein, when the main air inlet pipe road is opened, carrier gas carries the first presoma and is passed through the reaction through the main air inlet pipe road
Chamber, the supply source bottle provide first presoma,
When the main air inlet pipe road is closed, the supply source bottle and the recovered pipeline connection of recycling source bottle, the recycling source
Bottle carries out condensing recovery to first presoma that the supply source bottle provides.
2. atomic layer deposition apparatus according to claim 1, which is characterized in that
The supply source bottle accesses the main air inlet pipe road through the first transmission pipeline, and the recycling source bottle connects through the second transmission pipeline
Enter the main air inlet pipe road,
The opening and closing of first transmission pipeline, second transmission pipeline and the main air inlet pipe road are controlled by
One to third valve.
3. atomic layer deposition apparatus according to claim 1, which is characterized in that described first in the supply source bottle
When the content of presoma is lower than given threshold, the supply source bottle and recycling source bottle exchange function.
4. atomic layer deposition apparatus according to claim 1, which is characterized in that the control device includes:
First thermal module, for controlling the temperature of the supply source bottle, so that first presoma is in the supply source bottle
In be in gaseous state；And
Second temperature module, for controlling the temperature of the recycling source bottle, so that first presoma is in the recycling source bottle
In be in a liquid state or solid-state.
5. atomic layer deposition apparatus according to claim 4, which is characterized in that the control device further include:
Third thermal module, for controlling the main air inlet pipe road, first transmission pipeline and second transmission pipeline
Temperature so that the main air inlet pipe road, first transmission pipeline and the second transmission pipeline transport materials be in gaseous state.
6. atomic layer deposition apparatus according to claim 1, which is characterized in that further include:
Vacuum pump and the main exhaust pipeline being connected to the vacuum pump；And
First exhaust pipeline is connected between the recycling source bottle and the vacuum pump,
When the main air inlet pipe road is closed, the recycling source bottle is released through the first exhaust pipeline and the main exhaust pipeline
Put the carrier gas.
7. atomic layer deposition apparatus according to claim 1, which is characterized in that further include:
Third transmission pipeline, purge gas enter the reaction chamber via the third transmission pipeline and main air inlet pipe road and blow
Sweep the reaction chamber.
8. atomic layer deposition apparatus according to claim 6, which is characterized in that further include:
4th transmission pipeline, the second presoma enter the reaction chamber, second forerunner via the 4th transmission pipeline
Body is used to generate film with the first forerunner precursor reactant.
9. atomic layer deposition apparatus according to claim 8, which is characterized in that further include:
Second exhaust pipeline, the 4th transmission pipeline close when, second presoma via the second exhaust pipeline into
Enter the vacuum pump.
10. atomic layer deposition apparatus according to claim 1, which is characterized in that first presoma is metal front
Body.
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| CN111378960A (en) * | 2020-04-27 | 2020-07-07 | 复旦大学 | Microwave-assisted atomic layer deposition method and reactor |
| WO2020211630A1 (en) * | 2019-04-16 | 2020-10-22 | 北京北方华创微电子装备有限公司 | Reaction gas supply system and control method therefor |
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| CN109576674B (en) | 2021-07-13 |
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