CN201873751U - Atom layer deposition device for preparing thin film at inner wall of porous material - Google Patents
Atom layer deposition device for preparing thin film at inner wall of porous material Download PDFInfo
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- CN201873751U CN201873751U CN2010206380177U CN201020638017U CN201873751U CN 201873751 U CN201873751 U CN 201873751U CN 2010206380177 U CN2010206380177 U CN 2010206380177U CN 201020638017 U CN201020638017 U CN 201020638017U CN 201873751 U CN201873751 U CN 201873751U
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- porous material
- reaction cavity
- air outlet
- layer deposition
- material sample
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Abstract
The utility model discloses an atom layer deposition device for preparing a thin film at the inner wall of a porous material, which comprises a reaction cavity body, a clamping device, a precursor source, a carrier gas source and a vacuum pump, wherein an air inlet and an air outlet are respectively arranged at two ends of the reaction cavity body; the clamping device is used for clamping a porous material sample; the precursor source and the carrier gas source are respectively connected with the air inlet through a valve and a pipeline; and the vacuum pump is connected with the air outlet with the pipeline. By adopting the atom layer deposition device for preparing the thin film at the inner wall of the porous material, the thickness uniformity of the thin film of the porous material can be improved by atom layer deposition, so that batch production can be realized.
Description
Technical field
The relevant a kind of atomic layer deposition apparatus of the utility model refers in particular to a kind of atomic layer deposition apparatus for preparing porous material inwall film.
Background technology
Ald (ALD, Atomic Layer Deposition) is a kind ofly the presoma ALT pulse can be fed reactor, make the technology of presoma chemisorption and reaction in substrate forming deposit film.Adopt the deposit film of described technique for atomic layer deposition preparation, compare with the deposit film that adopts general chemistry vapour deposition preparation, have the following advantages: (1) can carry out at a lower temperature; (2) can prepare the nano level film; (3) obtaining 100% naturally successively covers; (4) thickness is even; (5) You Yi consistence.
At present, conventional atomic layer deposition apparatus reaction chamber mainly contains following several: (1) has the rotation base station, and substrate is placed on the rotation base station, passes in and out the precursor source air-flow successively, and the centre is separated with rare gas element; (2) precursor source flows through the hot-wall cvd tubular reactor; (3) travelling-wave type reactor (traveling-wave reactor).Wherein, the gas flow pattern mainly contains cross-flow mode (cross-flow) or spray model (showerhead).Cross-flow mode mainly is meant gas flow direction and substrate surface level; Spray model is meant that mainly gas flow direction is vertical with substrate surface.
Adopt above-mentioned atomic layer deposition apparatus reaction chamber, can be on the plane, the uniform deposit film of substrate surface preparation special-shaped curved or less form ratio.But, the sedimentary film of porous material inwall with higher form ratio, thicknesses of layers reduces gradually along gas flow direction, and homogeneity is relatively poor.Be difficult to realize have the batch process of the porous substrate of higher form ratio.
The utility model content
Main purpose of the present utility model is to provide a kind of atomic layer deposition apparatus for preparing porous material inwall film, can improve the homogeneity of porous material ald film thickness, and then realizes mass production.
For achieving the above object, the utility model also provides a kind of atomic layer deposition apparatus for preparing porous material inwall film, comprising: reaction cavity, two ends are respectively arranged with inlet mouth and air outlet; The clamping device that is used for clamping porous material sample; Precursor source and carrier gas source are connected with described inlet mouth respectively by valve and pipeline; And vacuum pump, be connected with described air outlet by described pipeline.
Further, described clamping device comprises: be used for fixing the anchor clamps of described porous material sample, be arranged at described reaction cavity inside; Be used to drive the power set of described anchor clamps rotation, be arranged at described reaction cavity outside, described reaction cavity is provided with the through hole that wears for rotating shaft, and described power set is connected with described anchor clamps by described rotating shaft; Tightness system is arranged between described through hole and the described rotating shaft; And be used to prevent to deposit described presoma to protect the protector of described rotating shaft and described tightness system.
Further, being used to purge described rotating shaft and described tightness system comprises to prevent the described protector that deposits described presoma: the gas tube that runs through described reaction cavity; And the gas-holder that is connected with described gas tube, described gas-holder is arranged at described reaction cavity outside.
Further, described reaction cavity also is provided with heating/refrigeration plant and temp probe.
Further, also be provided with exhaust gas processing device between described air outlet and the described vacuum pump.
For achieving the above object, the utility model also provides a kind of atomic layer deposition apparatus for preparing porous material inwall film, comprising: be used to seal two end caps that are arranged on porous material sample two ends, be respectively arranged with inlet mouth and air outlet on each end cap; Precursor source and carrier gas source are connected with described inlet mouth respectively by valve and pipeline; And vacuum pump, be connected with described air outlet by described pipeline.
Further, described end cap is arranged on the two ends of described porous material sample by the sealing-ring sealing.
Compared with prior art, the atomic layer deposition apparatus of preparation porous material inwall film of the present utility model can improve the homogeneity of porous material ald film thickness, and then realizes producing in batches; And, the clamping device suitable according to the shaped design of substrate, the porous material substrate that reaction chamber can be applicable to have different physical dimension has improved versatility, has reduced cost.
Description of drawings
Fig. 1 is the user mode synoptic diagram one of the atomic layer deposition apparatus of preparation porous material inwall film of the present utility model;
Fig. 2 is the user mode synoptic diagram two of the atomic layer deposition apparatus of preparation porous material inwall film of the present utility model;
Fig. 3 is the user mode synoptic diagram three of the atomic layer deposition apparatus of preparation porous material inwall film of the present utility model;
Fig. 4 is the user mode synoptic diagram four of the atomic layer deposition apparatus of preparation porous material inwall film of the present utility model;
Fig. 5 is the structural representation of another embodiment of the atomic layer deposition apparatus of preparation porous material inwall film of the present utility model.
Embodiment
Relevant the utility model technology contents and detailed description, existing conjunction with figs. is described as follows:
See also Fig. 1-Fig. 4, a kind of atomic layer deposition apparatus for preparing porous material inwall film of the present utility model comprises: reaction cavity 10, precursor source, carrier gas source and vacuum pump.Wherein:
One end of reaction cavity 10 is provided with inlet mouth 11 and air outlet 13, and the other end is provided with inlet mouth 12 and air outlet 14.Reaction cavity 10 can arbitrarily angledly be placed, and in addition, reaction cavity 10 can axially rotate.The exit of reaction cavity 10 can also be provided with pressure transmitter, is used for the pressure change of dynamic monitoring reaction cavity 10.
Described clamping device is used for fixing or clamping porous material sample rotatably.Described clamping device comprises anchor clamps 15, power set, tightness system and protector, and wherein, anchor clamps 15 are used for fixing porous material sample 20, is arranged at reaction cavity 10 inside, and anchor clamps 15 can radially rotate, and also can realize axial rotation.Anchor clamps 15 are commercially available matured product with described power set, do not repeat them here.The quantity of anchor clamps 15 is one or more.Described power set is used to drive anchor clamps 15 rotations, is arranged at reaction cavity 10 outsides, and reaction cavity 10 is provided with the through hole that wears for rotating shaft, and described power set is connected with described anchor clamps by described rotating shaft.Described tightness system is arranged between described through hole and the described rotating shaft.Described protector is used to prevent to deposit described presoma to protect described rotating shaft and described tightness system.
Described protector comprises gas tube that runs through described reaction cavity and the gas-holder that is connected with described gas tube, is used to purge described rotating shaft and described tightness system to prevent to deposit described presoma.Wherein, described gas-holder is arranged at reaction cavity 10 outsides.Described protector can be nitrogen protection device, i.e. gas-holder stored nitrogen, and described gas tube output described rotating shaft of nitrogen purging and described tightness system are to prevent to deposit described presoma.Not as limit, can also be other gas shield devices, any gas that does not participate in reacting all can.
The shape of anchor clamps 15 can be thin slice shape, can also be cylindricality.For the porous material sample of large-size, can select the cylindricality anchor clamps, the two ends of porous material sample are fixed or with the center fixed of porous material sample.For the porous material sample of thinner thickness, can select thin slice clevis tool.The shape of anchor clamps is not as limit, and the Any shape that can match with the shape of porous material sample all can.In addition, for larger-size porous material sample, each porous material sample can be separately positioned on each anchor clamps 15, and, a plurality of porous material samples can be fixed on the same anchor clamps 15 for the less porous material sample of size.
Described precursor source and carrier gas source are connected with inlet mouth 11 respectively by valve and pipeline, are used for feeding different presomas to the internal pulses of reaction cavity 10.In addition, can also be provided with mass flow controller between the outlet of described carrier gas source and the inlet mouth 11, be used to control the flow of carrier gas.Wherein, described presoma is gaseous state, liquid state, solid-state or plasmoid; Liquid, solid-state described presoma can be brought reaction zone into by carrier gas, and the described presoma of gaseous state, plasmoid can directly enter reaction zone also can bring described reaction zone into by carrier gas; During actual the use, can feed presoma and/or carrier gas that valve control enters inlet mouth 11.
Described vacuum pump is connected with air outlet 12 by described pipeline, be used to remove the unnecessary described presoma and the byproduct of reaction of reaction cavity 10 inside, in addition, can also be provided with exhaust gas processing device between air outlet 12 and the described vacuum pump, discharged by described vacuum pump again after described exhaust gas processing device purifies by the tail gas that unnecessary presoma and byproduct of reaction constitute, to reduce the infringement that described tail gas causes described vacuum pump.
In addition, reaction cavity 10 also is provided with heating/refrigeration plant and temp probe, and described heating/refrigeration plant is used for heating or refrigeration reaction cavity 10.
A kind of using method of the atomic layer deposition apparatus of preparation porous material inwall film of the present utility model, particular case is as follows: horizontal positioned reaction cavity 10, the inside of reaction cavity 10 is provided with anchor clamps 15, anchor clamps 15 fixed clamp porous material samples 20 (two ends of clamping porous material sample 20), the two ends of porous material sample 20 are made as end face 21 and end face 22 respectively, inside is provided with many ducts 23, duct 23 schematically shows the internal structure and the feature of porous material sample 20, not with this condition as restriction porous material sample 20.With two kinds of presomas (precursor A and precursor B) is example, and its use is described:
Step 1: after one or more porous material samples 20 are arranged on reaction cavity 10, reaction cavity 10 is carried out vacuum-treat, and the quantity of porous material sample 20 can rationally be set according to the volume of porous material sample 20 and the volume size of reaction cavity 10.
Step 2: processing that reaction cavity 10 is heated or freezes, after reaching working temperature, precursor A is fed reaction cavity 10 from inlet mouth 11 with the spray pattern pulse, precursor A is retained in duct 23 inwalls of porous material sample 20 by chemisorption or physical adsorption, and unnecessary precursor A 14 is discharged from the air outlet; Then, precursor B is fed reaction cavity 10 from inlet mouth 11 with the spray pattern pulse, the precursor A generation chemical reaction of the inwall of precursor B and porous material sample 20 forms thin film, and unnecessary precursor B and byproduct of reaction be 14 discharges from the air outlet, as shown in Figure 1.
Step 3: precursor A is fed reaction cavity 10 from inlet mouth 12 with the spray pattern pulse, and reaction and adsorption process are identical with said process, do not repeat them here, and unnecessary precursor A and byproduct of reaction be 13 discharges from the air outlet; Precursor B is fed reaction cavity 10 from inlet mouth 12 with the spray pattern pulse, and after reaction and the absorption, unnecessary precursor B and byproduct of reaction be 13 discharges from the air outlet, as shown in Figure 2.
Step 4: recirculation above-mentioned steps two and step 3, until the coating film of the inwall of porous material sample 20 deposition desired thickness.
In the above-mentioned steps, precursor A and precursor B are with the duct 23 of cross-flow mode by porous material sample 20.
In the above-mentioned steps two, precursor A and precursor B also can feed reaction cavity 10 from inlet mouth 12 pulses, and unnecessary presoma and byproduct of reaction be 13 discharges from the air outlet; Correspondingly, in the above-mentioned steps three, precursor A and precursor B feed reaction cavity 10 from inlet mouth 11 pulses, and unnecessary presoma and byproduct of reaction be 14 discharges from the air outlet.
Above-mentioned steps two can repeat a plurality of circulations, and correspondingly, above-mentioned steps three also can repeat a plurality of circulations.
The another kind of using method of the atomic layer deposition apparatus of preparation porous material inwall film of the present utility model, roughly the same with aforementioned using method, difference is: the two ends shape difference of reaction cavity 10, reaction cavity 10 is vertically to place, anchor clamps 15 in the reaction cavity 10 are clamping porous material sample 20 (centre of clamping porous material sample 20) rotatably, and the difference of use and aforementioned use is:
Step 3: with porous material sample 20 radially behind the symmetry axis Rotate 180 degree (as shown in Figures 3 and 4), precursor A is fed reaction cavity 10 from inlet mouth 11 with the spray pattern pulse, after reaction and the absorption, unnecessary precursor A and byproduct of reaction be 14 discharges from the air outlet; Precursor B is fed reaction cavity 10 from inlet mouth 11 with the spray pattern pulse, and after reaction and the absorption, unnecessary precursor B and byproduct of reaction be 14 discharges from the air outlet.
In step 2 described in the present embodiment and the step 3, precursor A and precursor B also can feed reaction cavity 10 from inlet mouth 12 pulses, and unnecessary presoma and byproduct of reaction be 13 discharges from the air outlet.
In addition, another embodiment of the atomic layer deposition apparatus of preparation porous material inwall film of the present utility model, comprise: two end caps 30, be respectively arranged with inlet mouth 31,32 and air outlet 33,34 on each end cap, be used to seal the two ends that are arranged on larger-size porous material sample 20; Precursor source and carrier gas source are connected with inlet mouth 31,32 respectively by valve and pipeline, are used for feeding different presomas by inlet mouth 31,32 to porous material sample 20 internal pulses; And vacuum pump, be connected with air outlet 33,34 by described pipeline, be used to remove the unnecessary described presoma and the byproduct of reaction of porous material sample 20 inside, as shown in Figure 5.
Wherein, end cap 30 is arranged on the two ends of porous material sample 20 by sealing-ring 35 sealings.
Annexation in the present embodiment is identical with using method and previous embodiment, does not repeat them here.
Above-mentioned is preferred embodiment of the present utility model only, is not to be used for limiting the scope that the utility model is implemented.Be that all equalizations of being done according to the utility model claims change and modification, be the utility model claim and contain.
Claims (7)
1. an atomic layer deposition apparatus for preparing porous material inwall film is characterized in that, comprising:
Reaction cavity, two ends are respectively arranged with inlet mouth and air outlet;
The clamping device that is used for clamping porous material sample;
Precursor source and carrier gas source are connected with described inlet mouth respectively by valve and pipeline; And
Vacuum pump is connected with described air outlet by described pipeline.
2. equipment as claimed in claim 1 is characterized in that, described clamping device comprises:
The anchor clamps that are used for fixing described porous material sample are arranged at described reaction cavity inside;
Be used to drive the power set of described anchor clamps rotation, be arranged at described reaction cavity outside, described reaction cavity is provided with the through hole that wears for rotating shaft, and described power set is connected with described anchor clamps by described rotating shaft;
Tightness system is arranged between described through hole and the described rotating shaft; And
Be used to prevent to deposit described presoma to protect the protector of described rotating shaft and described tightness system.
3. equipment as claimed in claim 2 is characterized in that, is used to purge described rotating shaft and described tightness system and comprises to prevent the described protector that deposits described presoma:
The gas tube that runs through described reaction cavity; And
With the gas-holder that described gas tube is connected, described gas-holder is arranged at described reaction cavity outside.
4. equipment as claimed in claim 1 is characterized in that described reaction cavity also is provided with heating/refrigeration plant and temp probe.
5. equipment as claimed in claim 1 is characterized in that, also is provided with exhaust gas processing device between described air outlet and the described vacuum pump.
6. an atomic layer deposition apparatus for preparing porous material inwall film is characterized in that, comprising:
Be used to seal two end caps that are arranged on porous material sample two ends, be respectively arranged with inlet mouth and air outlet on each end cap;
Precursor source and carrier gas source are connected with described inlet mouth respectively by valve and pipeline; And
Vacuum pump is connected with described air outlet by described pipeline.
7. equipment as claimed in claim 6 is characterized in that, described end cap is arranged on the two ends of described porous material sample by the sealing-ring sealing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206380177U CN201873751U (en) | 2010-11-26 | 2010-11-26 | Atom layer deposition device for preparing thin film at inner wall of porous material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206380177U CN201873751U (en) | 2010-11-26 | 2010-11-26 | Atom layer deposition device for preparing thin film at inner wall of porous material |
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| CN201873751U true CN201873751U (en) | 2011-06-22 |
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| CN2010206380177U Expired - Fee Related CN201873751U (en) | 2010-11-26 | 2010-11-26 | Atom layer deposition device for preparing thin film at inner wall of porous material |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102645455A (en) * | 2012-03-22 | 2012-08-22 | 南京工业大学 | Preparation method for sensitive humidity sensor material |
| CN103866288A (en) * | 2014-03-27 | 2014-06-18 | 北京七星华创电子股份有限公司 | Reaction unit and method for atom layer film deposition |
| CN105925959A (en) * | 2016-05-13 | 2016-09-07 | 上海纳米技术及应用国家工程研究中心有限公司 | Composite ALD gas guiding device |
| CN105925960A (en) * | 2016-06-07 | 2016-09-07 | 江苏微导纳米装备科技有限公司 | Atomic layer deposition-based vacuum coating device for solar cell production |
-
2010
- 2010-11-26 CN CN2010206380177U patent/CN201873751U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102645455A (en) * | 2012-03-22 | 2012-08-22 | 南京工业大学 | Preparation method for sensitive humidity sensor material |
| CN102645455B (en) * | 2012-03-22 | 2014-02-26 | 南京工业大学 | Preparation method for sensitive humidity sensor material |
| CN103866288A (en) * | 2014-03-27 | 2014-06-18 | 北京七星华创电子股份有限公司 | Reaction unit and method for atom layer film deposition |
| CN103866288B (en) * | 2014-03-27 | 2016-06-01 | 北京七星华创电子股份有限公司 | A kind of reaction unit for atomic layer level thin film deposition and method |
| CN105925959A (en) * | 2016-05-13 | 2016-09-07 | 上海纳米技术及应用国家工程研究中心有限公司 | Composite ALD gas guiding device |
| CN105925959B (en) * | 2016-05-13 | 2018-10-16 | 上海纳米技术及应用国家工程研究中心有限公司 | A kind of compound ALD gas operated devices |
| CN105925960A (en) * | 2016-06-07 | 2016-09-07 | 江苏微导纳米装备科技有限公司 | Atomic layer deposition-based vacuum coating device for solar cell production |
| CN105925960B (en) * | 2016-06-07 | 2018-10-30 | 江苏微导纳米装备科技有限公司 | A kind of atomic layer deposition vacuum coater for solar battery sheet production |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110622 Termination date: 20161126 |