CN104393063A - N-type HIT solar cell structure - Google Patents
N-type HIT solar cell structure Download PDFInfo
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- CN104393063A CN104393063A CN201410591937.0A CN201410591937A CN104393063A CN 104393063 A CN104393063 A CN 104393063A CN 201410591937 A CN201410591937 A CN 201410591937A CN 104393063 A CN104393063 A CN 104393063A
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- amorphous silicon
- hit solar
- heavily doped
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 56
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 19
- 229910052681 coesite Inorganic materials 0.000 claims description 16
- 229910052906 cristobalite Inorganic materials 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 229910052682 stishovite Inorganic materials 0.000 claims description 16
- 229910052905 tridymite Inorganic materials 0.000 claims description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 238000004549 pulsed laser deposition Methods 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 abstract description 5
- 238000005036 potential barrier Methods 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 62
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 229910052593 corundum Inorganic materials 0.000 description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000005355 Hall effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000002687 intercalation Effects 0.000 description 3
- 238000009830 intercalation Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910021387 carbon allotrope Inorganic materials 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention provides an N-type HIT solar cell structure. A graphene thin-film is adopted to act as a window layer of the HIT solar cell so that light transmittance and high conductivity can be guaranteed, and the potential barrier of carriers on a p-a-Si and a transparent conductive thin-film layer can be reduced. Meanwhile, short circuit current density of the cell can be enhanced due to high transmittance and conductivity of the graphene thin-film so that efficiency is enhanced.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly a kind of N-type HIT solar battery structure.
Background technology
HIT solar cell had both had high efficiency and the high stability of crystal silicon solar energy battery, and simultaneously owing to there is not pyroprocess in preparation process, energy consumption is little, and technique is relatively simple.Therefore, HIT battery also has temperature characterisitic more better than monocrystalline silicon battery, at high temperature also can have higher output.Therefore, HIT battery, as the solar cell of high efficiency, low cost, enjoys the concern of people in recent years, one of developing direction becoming solar cell.Because the conductivity of amorphous silicon is poor, so in the manufacturing process of HIT, between electrode and amorphous silicon layer, add the collection that one deck TCO film can increase charge carrier effectively.Transparent conductive oxide film has optical clear and conduction dual-use function, and playing key effect to the collection of efficient carrier, can reduce the reflection of light, play good light trapping effect, is good window layer material.The HIT battery efficiency of current Sanyo industrialization reaches 21%, and its Laboratory efficiencies has more been above 25.6%.It all adopts N-shaped IWO film as Window layer in HIT solar cell, because the mobility of IWO film is higher than ito thin film, thus improves the short-circuit current density of HIT solar cell.
In recent years, graphene film material is as a kind of novel transparent conductive film, because its special construction makes it have the physicochemical properties of a series of uniquenesses such as high electron mobility, high theoretical specific surface area, high heat conductance, quantum tunneling effect, half-integer quantum hall effect at ambient temperature, in theory or experimental study, all show great scientific meaning and using value, excite scientific circles to take turns research boom to the another of carbon nanomaterial especially.Graphene is a kind of two-dimensional semimetal nano-sized carbon allotrope, and the hexagonal lattice honeycomb two-dimensional structure be made up of individual layer sp2 carbon atom is the basic structural unit of graphite, fullerene and carbon nano-tube.Graphene is Half-metallic material, and it has unique carrier properties and at room temperature can observe Hall effect without the dirac fermion attribute of quality and show very high carrier mobility, up to 15000cm2/Vs under room temperature.Its resistivity is only 10-6 Ω/cm, and the metal material silver (be about 1.59 × 310-6 Ω/cm) minimum than resistivity under current room temperature is also more lower slightly.Simultaneously Graphene has the characteristic such as quantum tunneling effect and half-integer Hall effect, the reduction phenomenon of Anderson localization, the conductivity that never disappears; And the physicochemical characteristics of some other excellence, as high adsorption, high chemical stability, up to the theoretical specific surface area, ferromagnetism, good thermal conductivity (3080 ~ 5150W/ (mK)) etc. of 2630m2/g, simultaneously the work function of Graphene is that the work function of 4.5eV-5.2eV and IWO is similar.
Summary of the invention
The invention provides a kind of N-type HIT solar battery structure, the short-circuit current density of battery can be improved, improve the efficiency of HIT solar cell further.
A kind of N-type HIT solar battery structure provided by the invention: comprise n type single crystal silicon sheet (1), n type single crystal silicon sheet (1) positive and negative deposition intrinsic amorphous silicon film (2), P type heavily doped amorphous silicon film (3) of the upper deposition of the intrinsic amorphous silicon film (2) in front; At P type heavily doped amorphous silicon film (3) upper deposition SiO2 film (5), by P type doped graphene film (7) directly on SiO2 film surface; Front P type doped graphene thin (7) film prints silver metal grid line positive electrode (9); The intrinsic amorphous silicon film (2) at the n type single crystal silicon sheet back side; The upper deposited n-type heavily doped amorphous silicon film (4) of intrinsic noncrystal membrane (2) overleaf; At the upper depositing Al 2O3 film (6) of N-type heavily doped amorphous silicon film (4), at Al2O3 film (6) upper deposition IWO transparent conductive film (8); IWO conductive film (8) transparent overleaf upper printing silver metal gate line electrode (10); Intrinsic amorphous silicon layer thickness is at 5-15nm.The doping content of the Graphene of described N-type doped graphene film (7) is 10
13cm
-2.
Above-mentioned P type HIT solar battery structure, it is characterized in that, described intrinsic amorphous silicon layer (2), P type heavily doped amorphous silicon layer (3), N-type heavily doped amorphous silicon layer (4), SiO2 film (5), Al2O3 film (6) resilient coating all adopt PECVD to deposit.
Aforementioned p-type HIT solar battery structure, described IWO film (8) adopts pulsed laser deposition to deposit, and the thickness of deposition is about 80nm.
Wherein all intrinsic amorphous silicon layer and N-shaped, P type heavily doped amorphous silicon layer and SiO2 and Al2O3 thin film buffer layer all adopt PECVD to deposit, and the IWO film at the back side adopts pulsed laser deposition to deposit.
Advantageous Effects: adopt in the present invention graphene film as HIT solar cell Window layer can ensure light transmitance and high conductance while can reduce the potential barrier of charge carrier at p-a-Si and transparent conductive film layer (TCO), simultaneously due to the high transport ratio of graphene film and conductivity, thus improve the short-circuit current density of battery, raise the efficiency.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
In figure, 1.N type monocrystalline silicon piece, 2. intrinsic amorphous silicon film, 3.P type heavily doped amorphous silicon film, 4.N type heavily doped amorphous silicon film, 5.SiO2 film, 6, Al2O3 film, 7, p-type doped graphene film, 8, IWO nesa coating, 9. front electrode, 10. backplate.
Embodiment
Embodiment 1: all intrinsic amorphous silicon layer and N-shaped, P type heavily doped amorphous silicon layer and the SiO2 in front and the Al2O3 film intercalation of reverse side all adopt PECVD to deposit, and P type doped graphene transparent conductive film is for being transferred directly to SiO2 film surface, the IWO film at the back side adopts PLD method to deposit.
Preparation process is mainly:
1. on monocrystalline silicon piece, make pyramid structure of uniform size, and the surface requirements of silicon chip is bright, immaculate, cut, washmarking etc.
2. adopt PECVD deposition intrinsic amorphous silicon membrane (i-a-Si) respectively, P type heavily doped amorphous silicon film (p-a-Si), the SiO in N-type heavily doped amorphous silicon film (n-a-Si) and front
2with the Al of reverse side
2o
3layer, intrinsic amorphous silicon layer thickness is at 15nm.
3. by P type doped graphene film transfer to the surface of SiO2 film, the doping content of Graphene is 10
13cm
-2.
4. adopt the IWO film of PLD method deposition HIT cell backside, the thickness of deposition is about 80nm, and the base reservoir temperature of deposition is 150 degree, passes into argon gas and oxygen simultaneously, and oxygen/argon is about than being 0.15.
5., with silk-screen printing technique printing low-temperature silver slurry, do all positive and negative gate electrodes.Bake out temperature is 140 degree, and sintering temperature is 200 degree.
Embodiment 2: all intrinsic amorphous silicon layer and N-shaped, P type heavily doped amorphous silicon layer and the SiO2 in front and the Al2O3 film intercalation of reverse side all adopt PECVD to deposit, and P type doped graphene transparent conductive film is for being transferred directly to SiO2 film surface, the IWO film at the back side adopts PLD method to deposit.
Preparation process is mainly:
1. on monocrystalline silicon piece, make pyramid structure of uniform size, and the surface requirements of silicon chip is bright, immaculate, cut, washmarking etc.
2. adopt PECVD deposition intrinsic amorphous silicon membrane (i-a-Si) respectively, P type heavily doped amorphous silicon film (p-a-Si), the SiO in N-type heavily doped amorphous silicon film (n-a-Si) and front
2with the Al of reverse side
2o
3layer, intrinsic amorphous silicon layer thickness is at 10nm.
3. by P type doped graphene film transfer to the surface of SiO2 film, the doping content of Graphene is 10
13cm
-2.
4. adopt the IWO film of PLD method deposition HIT cell backside, the thickness of deposition is about 80nm, and the base reservoir temperature of deposition is 150 degree, passes into argon gas and oxygen simultaneously, and oxygen/argon is about than being 0.2.
5., with silk-screen printing technique printing low-temperature silver slurry, do all positive and negative gate electrodes.Bake out temperature is 140 degree, and sintering temperature is 200 degree.
Embodiment 3: all intrinsic amorphous silicon layer and N-shaped, P type heavily doped amorphous silicon layer and the SiO2 in front and the Al2O3 film intercalation of reverse side all adopt PECVD to deposit, and P type doped graphene transparent conductive film is for being transferred directly to SiO2 film surface, the IWO film at the back side adopts PLD method to deposit.
Preparation process is mainly:
1. on monocrystalline silicon piece, make pyramid structure of uniform size, and the surface requirements of silicon chip is bright, immaculate, cut, washmarking etc.
2. adopt PECVD deposition intrinsic amorphous silicon membrane (i-a-Si) respectively, P type heavily doped amorphous silicon film (p-a-Si), the SiO in N-type heavily doped amorphous silicon film (n-a-Si) and front
2with the Al of reverse side
2o
3layer, intrinsic amorphous silicon layer thickness is at 15nm.
3. the graphene film that P type adulterates is transferred to the surface of SiO2 film, the doping content of Graphene is 10
13cm
-2.
4. adopt the IWO film of PLD method deposition HIT cell backside, the thickness of deposition is about 80nm, and the base reservoir temperature of deposition is 150 degree, passes into argon gas and oxygen simultaneously, and oxygen/argon is about than being 0.15.
5., with silk-screen printing technique printing low-temperature silver slurry, do all positive and negative gate electrodes.Bake out temperature is 140 degree, and sintering temperature is 200 degree.
Claims (5)
1. a N-type HIT solar battery structure: comprise n type single crystal silicon sheet (1), n type single crystal silicon sheet (1) positive and negative deposition intrinsic amorphous silicon film (2), the intrinsic amorphous silicon film (2) in front deposits P type heavily doped amorphous silicon film (3), SiO2 film (5) and p-type doped graphene film (7) successively, upper printing silver metal grid line positive electrode (9) in front P type doped graphene film (7); Deposited n-type heavily doped amorphous silicon film (4), depositing Al successively on the intrinsic amorphous silicon film (2) at the n type single crystal silicon sheet back side
2o
3film (6) and IWO transparent conductive film (8), IWO conductive film (8) transparent overleaf upper printing silver metal grid line negative electrode (10).
2. N-type HIT solar battery structure according to claim 1, is characterized in that, the doping content of the Graphene of described p-type doped graphene film (7) is 10
13cm
-2.
3. N-type HIT solar battery structure according to claim 1, it is characterized in that, described intrinsic amorphous silicon layer (2), N-type heavily doped amorphous silicon layer (4), P type heavily doped amorphous silicon layer (3), SiO2 film (5), Al
2o
3film (6) resilient coating all adopts PECVD to deposit.
4. N-type HIT solar battery structure according to claim 1, is characterized in that, described intrinsic amorphous silicon layer (2) thickness is at 5-15nm.
5. N-type HIT solar battery structure according to claim 1, is characterized in that, described IWO film (8) adopts pulsed laser deposition to deposit, and the thickness of deposition is about 80nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410591937.0A CN104393063B (en) | 2014-10-29 | 2014-10-29 | N-type HIT solar cell structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410591937.0A CN104393063B (en) | 2014-10-29 | 2014-10-29 | N-type HIT solar cell structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104393063A true CN104393063A (en) | 2015-03-04 |
| CN104393063B CN104393063B (en) | 2017-02-15 |
Family
ID=52610936
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|---|---|---|---|
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376787A (en) * | 2011-11-04 | 2012-03-14 | 电子科技大学 | Graphene solar cell and preparation method thereof |
| CN102856419A (en) * | 2012-08-16 | 2013-01-02 | 常州天合光能有限公司 | Laminated silicon-based heterojunction solar cell |
| CN103311323A (en) * | 2013-06-21 | 2013-09-18 | 杭州格蓝丰纳米科技有限公司 | Graphene/silicon solar cell and manufacturing method thereof |
| CN203250771U (en) * | 2013-04-19 | 2013-10-23 | 巨力新能源股份有限公司 | Heterojunction silicon-based solar cell |
| US20140290727A1 (en) * | 2013-03-26 | 2014-10-02 | Kabushiki Kaisha Toshiba | Solar cell |
-
2014
- 2014-10-29 CN CN201410591937.0A patent/CN104393063B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376787A (en) * | 2011-11-04 | 2012-03-14 | 电子科技大学 | Graphene solar cell and preparation method thereof |
| CN102856419A (en) * | 2012-08-16 | 2013-01-02 | 常州天合光能有限公司 | Laminated silicon-based heterojunction solar cell |
| US20140290727A1 (en) * | 2013-03-26 | 2014-10-02 | Kabushiki Kaisha Toshiba | Solar cell |
| CN203250771U (en) * | 2013-04-19 | 2013-10-23 | 巨力新能源股份有限公司 | Heterojunction silicon-based solar cell |
| CN103311323A (en) * | 2013-06-21 | 2013-09-18 | 杭州格蓝丰纳米科技有限公司 | Graphene/silicon solar cell and manufacturing method thereof |
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|---|---|
| CN104393063B (en) | 2017-02-15 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhang Tianming Inventor before: Gao Ying |
|
| COR | Change of bibliographic data | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20161111 Address after: 1, No. 610000, 21 floor, No. 69, Tianfu Third Street, Chengdu hi tech Zone, Sichuan, 2121 Applicant after: SICHUAN YAOUDING NEW ENERGY TECHNOLOGY CO., LTD. Address before: Chen Ji Zhen Zha village 223800 Suqian City, Jiangsu province twelve groups Sucheng District No. 27 Applicant before: Gao Ying |
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