CN104393063A - N型hit太阳能电池结构 - Google Patents
N型hit太阳能电池结构 Download PDFInfo
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 56
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 19
- 229910052681 coesite Inorganic materials 0.000 claims description 16
- 229910052906 cristobalite Inorganic materials 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 229910052682 stishovite Inorganic materials 0.000 claims description 16
- 229910052905 tridymite Inorganic materials 0.000 claims description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 238000004549 pulsed laser deposition Methods 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
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- 238000005036 potential barrier Methods 0.000 abstract description 2
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- 238000000034 method Methods 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 229910052593 corundum Inorganic materials 0.000 description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
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- 229910052760 oxygen Inorganic materials 0.000 description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
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- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910021387 carbon allotrope Inorganic materials 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
本发明提供一种N型HIT太阳能电池结构，采用石墨烯薄膜作为HIT太阳能电池的窗口层可以在保证光的透过率及其的高的导电率的同时可以降低载流子在p-a-Si与透明导电薄膜层的势垒，同时由于石墨烯薄膜高的透移率和导电性，从而提高电池的短路电流密度，提高效率。
Description
技术领域
本发明涉及太阳能电池技术领域，特别是一种N型HIT太阳能电池结构。
背景技术
HIT太阳能电池既具有晶体硅太阳能电池的高效率和高稳定性,同时由于制备过程中不存在高温过程，能耗小,工艺相对简单。因此，HIT电池还具有比单晶硅电池更好的温度特性,在高温下也能有较高的输出。因此，HIT电池作为高效率、低成本的太阳能电池,近年来备受人们的关注，已经成为太阳能电池的发展方向之一。由于非晶硅的导电性较差，所以在HIT的制作过程中，在电极和非晶硅层之间加一层TCO膜可以有效地增加载流子的收集。透明导电氧化薄膜具有光学透明和导电双重功能，对有效载流子的收集起着关键作用，可以减少光的反射，起到很好的陷光作用，是很好的窗口层材料。目前三洋公司产业化的HIT电池效率已达到21％，其实验室效率更是超过了25.6％。其在HIT太阳能电池中均采用n型IWO薄膜作为窗口层，因为IWO薄膜的迁移率高于ITO薄膜，从而提高HIT太阳能电池的短路电流密度。
近年来，石墨烯薄膜材料作为一种新型的透明导电薄膜，由于其特殊结构使其在室温条件下具有高电子迁移率、高理论比表面积、高热导率、量子隧道效应、半整数量子霍尔效应等一系列独特的物理化学性质，无论在理论还是实验研究方面都展示出重大的科学意义和应用价值，更是激发起科学界对碳纳米材料的又一轮研究热潮。石墨烯是一种二维半金属纳米碳同素异形体，是由单层sp2碳原子组成的六方点阵蜂巢状二维结构，是石墨、富勒烯以及碳纳米管的基本结构单元。石墨烯是半金属性材料，它有着独特的载流子特性和无质量的狄拉克费米子属性使其能够在室温下观测到霍尔效应且表现出很高的载流子迁移率，室温下高达15000cm2/V·s。其电阻率仅为10-6Ω/cm，比目前室温下电阻率最低的金属材料银(约为1.59×310-6Ω/cm)还略低些。同时石墨烯具有量子隧道效应及半整数霍尔效应、安德森局域化的弱化现象、永不消失的电导率等特性；以及其它一些优异的物理化学特性，如高吸附性、高化学稳定性，高达2630m2/g的理论比表面积、铁磁性、良好的导热性(3080～5150W/(m·K))等，同时石墨烯的功函数为4.5eV-5.2eV与IWO的功函数相似。
发明内容
本发明提供一种N型HIT太阳能电池结构，可以提高电池的短路电流密度，进一步提高HIT太阳能电池的效率。
本发明提供的一种N型HIT太阳能电池结构：包括N型单晶硅片(1)、N型单晶硅片(1)正反面沉积本征非晶硅膜(2)，在正面的本征非晶硅薄膜(2)上沉积的P型重掺杂非晶硅膜(3)；在P型重掺杂非晶硅薄膜(3)上沉积SiO2薄膜(5)，将P型掺杂石墨烯薄膜(7)直接在SiO2薄膜表面上；在正面P型掺杂石墨烯薄(7)膜上印刷银金属栅线正电极(9)；N型单晶硅片背面的本征非晶硅薄膜(2)；在背面的本征非晶薄膜(2)上沉积N型重掺杂非晶硅薄膜(4)；在N型重掺杂非晶硅薄膜(4)上沉积Al2O3薄膜(6)，在Al2O3薄膜(6)上沉积IWO透明导电薄膜(8)；在背面透明的IWO导电薄膜(8)上印刷银金属栅线电极(10)；本征非晶硅层厚度在5-15nm。所述的N型掺杂石墨烯薄膜(7)的石墨烯的掺杂浓度为1013cm-2。
上述的P型HIT太阳能电池结构，其特征在于，所述的本征非晶硅层(2)、P型重掺杂非晶硅层(3)、N型重掺杂非晶硅层(4)、SiO2薄膜(5)、Al2O3薄膜(6)缓冲层均采用PECVD沉积。
上述P型HIT太阳能电池结构，所述的IWO薄膜(8)采用脉冲激光沉积法进行沉积，沉积的厚度约为80nm。
其中所有的本征非晶硅层和n型、P型重掺杂非晶硅层及SiO2以及Al2O3薄膜缓冲层均采用PECVD沉积，背面的IWO薄膜采用脉冲激光沉积法进行沉积。
有益技术效果：本发明中采用石墨烯薄膜作为HIT太阳能电池的窗口层可以在保证光的透过率及其的高的导电率的同时可以降低载流子在p-a-Si与透明导电薄膜层(TCO)的势垒，同时由于石墨烯薄膜高的透移率和导电性，从而提高电池的短路电流密度，提高效率。
附图说明
图1是本发明的结构示意图；
图中，1.N型单晶硅片，2.本征非晶硅膜，3.P型重掺杂非晶硅膜，4.N型重掺杂非晶硅膜，5.SiO2薄膜，6，Al2O3薄膜，7，p型掺杂石墨烯薄膜，8，IWO透明导电膜，9.正面电极，10.背面电极。
具体实施方式
实施例1：所有的本征非晶硅层和n型、P型重掺杂非晶硅层及正面的SiO2和反面的Al2O3薄膜插层均采用PECVD沉积，而P型掺杂石墨烯透明导电薄膜为直接转移到SiO2薄膜表面，背面的IWO薄膜采用PLD方法进行沉积。
制备过程主要为：
1.在单晶硅片上做成大小均匀的金字塔结构，且硅片的表面要求光亮，无斑点，划痕，水痕等。
2.采用PECVD分别沉积本征非晶硅薄膜(i-a-Si),P型重掺杂非晶硅薄膜(p-a-Si),N型重掺杂非晶硅薄膜(n-a-Si)以及正面的SiO2和反面的Al2O3层，本征非晶硅层厚度在15nm。
3.将P型掺杂石墨烯薄膜转移至SiO2薄膜的表面，石墨烯的掺杂浓度为1013cm-2。
4.采用PLD方法沉积HIT电池背面的IWO薄膜，沉积的厚度约为80nm,沉积的基底温度为150度，同时通入氩气与氧气，且氧气/氩气约比为0.15。
5.用丝网印刷工艺印刷低温银浆料，做所有正反面栅电极。烘干温度为140度，烧结温度为200度。
实施例2：所有的本征非晶硅层和n型、P型重掺杂非晶硅层及正面的SiO2和反面的Al2O3薄膜插层均采用PECVD沉积，而P型掺杂石墨烯透明导电薄膜为直接转移到SiO2薄膜表面，背面的IWO薄膜采用PLD方法进行沉积。
制备过程主要为：
1.在单晶硅片上做成大小均匀的金字塔结构，且硅片的表面要求光亮，无斑点，划痕，水痕等。
2.采用PECVD分别沉积本征非晶硅薄膜(i-a-Si),P型重掺杂非晶硅薄膜(p-a-Si),N型重掺杂非晶硅薄膜(n-a-Si)以及正面的SiO2和反面的Al2O3层，本征非晶硅层厚度在10nm。
3.将P型掺杂石墨烯薄膜转移至SiO2薄膜的表面，石墨烯的掺杂浓度为1013cm-2。
4.采用PLD方法沉积HIT电池背面的IWO薄膜，沉积的厚度约为80nm,沉积的基底温度为150度，同时通入氩气与氧气，且氧气/氩气约比为0.2。
5.用丝网印刷工艺印刷低温银浆料，做所有正反面栅电极。烘干温度为140度，烧结温度为200度。
实施例3：所有的本征非晶硅层和n型、P型重掺杂非晶硅层及正面的SiO2和反面的Al2O3薄膜插层均采用PECVD沉积，而P型掺杂石墨烯透明导电薄膜为直接转移到SiO2薄膜表面，背面的IWO薄膜采用PLD方法进行沉积。
制备过程主要为：
1.在单晶硅片上做成大小均匀的金字塔结构，且硅片的表面要求光亮，无斑点，划痕，水痕等。
2.采用PECVD分别沉积本征非晶硅薄膜(i-a-Si),P型重掺杂非晶硅薄膜(p-a-Si),N型重掺杂非晶硅薄膜(n-a-Si)以及正面的SiO2和反面的Al2O3层，本征非晶硅层厚度在15nm。
3.将P型掺杂的石墨烯薄膜转移至SiO2薄膜的表面，石墨烯的掺杂浓度为1013cm-2。
4.采用PLD方法沉积HIT电池背面的IWO薄膜，沉积的厚度约为80nm,沉积的基底温度为150度，同时通入氩气与氧气，且氧气/氩气约比为0.15。
5.用丝网印刷工艺印刷低温银浆料，做所有正反面栅电极。烘干温度为140度，烧结温度为200度。
Claims (5)
1.一种N型HIT太阳能电池结构：包括N型单晶硅片(1)、N型单晶硅片(1)正反面沉积本征非晶硅膜(2)，在正面的本征非晶硅薄膜(2)上依次沉积P型重掺杂非晶硅膜(3)、SiO2薄膜(5)和p型掺杂石墨烯薄膜(7)，在正面P型掺杂石墨烯薄膜(7)上印刷银金属栅线正电极(9)；在N型单晶硅片背面的本征非晶硅薄膜(2)上依次沉积N型重掺杂非晶硅薄膜(4)、沉积Al2O3薄膜(6)和IWO透明导电薄膜(8)，在背面透明的IWO导电薄膜(8)上印刷银金属栅线负电极(10)。
2.根据权利要求1所述的N型HIT太阳能电池结构，其特征在于，所述的p型掺杂石墨烯薄膜(7)的石墨烯的掺杂浓度为1013cm-2。
3.根据权利要求1所述的N型HIT太阳能电池结构，其特征在于，所述的本征非晶硅层(2)、N型重掺杂非晶硅层(4)、P型重掺杂非晶硅层(3)、SiO2薄膜(5)、Al2O3薄膜(6)缓冲层均采用PECVD沉积。
4.根据权利要求1所述的N型HIT太阳能电池结构，其特征在于，所述的本征非晶硅层(2)厚度在5-15nm。
5.根据权利要求1所述的N型HIT太阳能电池结构，其特征在于，所述的IWO薄膜(8)采用脉冲激光沉积法进行沉积，沉积的厚度约为80nm。
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| CN103311323A (zh) * | 2013-06-21 | 2013-09-18 | 杭州格蓝丰纳米科技有限公司 | 一种石墨烯/硅太阳电池及其制造方法 |
| CN203250771U (zh) * | 2013-04-19 | 2013-10-23 | 巨力新能源股份有限公司 | 一种异质结硅基太阳能电池 |
| US20140290727A1 (en) * | 2013-03-26 | 2014-10-02 | Kabushiki Kaisha Toshiba | Solar cell |
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| CN102376787A (zh) * | 2011-11-04 | 2012-03-14 | 电子科技大学 | 一种石墨烯太阳能电池及其制备方法 |
| CN102856419A (zh) * | 2012-08-16 | 2013-01-02 | 常州天合光能有限公司 | 叠层硅基异质结太阳能电池 |
| US20140290727A1 (en) * | 2013-03-26 | 2014-10-02 | Kabushiki Kaisha Toshiba | Solar cell |
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