CN103219413A - Grapheme radial heterojunction solar cell and preparation method thereof - Google Patents
Grapheme radial heterojunction solar cell and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a grapheme radial heterojunction solar cell and a preparation method of the grapheme radial heterojunction solar cell. The grapheme radial heterojunction solar cell comprises a monocrystalline silicon substrate, p-type or n-type silicon nanorods which are formed on the monocrystalline silicon substrate, passivating films, amorphous silicon thin films, grapheme, transparent conductive oxide (TCO) films, metal gate electrodes, and back electrodes, wherein the passivating films, the amorphous silicon thin films, the grapheme, and the TCO films are formed on the monocrystalline silicon substrate and the p-type or n-type silicon nanorods sequentially, the type of the amorphous silicon thin films and the type of the silicon nanorods are reverse, the metal gate electrodes are manufactured on the TCO films, and the back electrodes are manufactured on the back surface of the monocrystalline silicon substrate. The grapheme radial heterojunction solar cell combines advantages of a radial junction cell and a heterojunction cell, and indirectly reduces production cost by means of high efficiency and low-temperature technology of the heterojunction cell. In addition, radial junction effectively improves absorption and utilization of light and improves collection efficiency of photo-induced carriers, and therefore efficiency of the cell is effectively improved. Meanwhile, by means of the low-temperature technology of heterojunction, the grapheme radial heterojunction solar cell is simple in manufacturing technology, good in temperature stability, and suitable for large-scale popularization and application.
Description
Technical field
The present invention relates to technical field of solar batteries, be specifically related to radially heterojunction solar battery and preparation method thereof of a kind of Graphene.
Background technology
Solar energy is considered to effectively to substitute a kind of novel energy of fossil fuel as a kind of regenerative resource.Simultaneously, the whole world increases year by year to the demand of solar energy.Solar cell is a kind of effective electrooptical device, is considered to effectively to protect environment, effectively utilizes clean energy resource, one of the most promising new technique.And the efficient of solar cell and cost of manufacture are two key factors of restriction solar cell development, and therefore, for the efficient that improves solar cell and reduce its manufacturing cost, various in recent years solar battery technologies and new structure are gushed out in succession.Heterojunction solar battery is expected to become the dominant direction of following solar cell industryization as a kind of high efficiency solar cell, and the radial junction solar cell has very big development prospect as a kind of new structure, and Graphene has very wide applications as a kind of novel conductive material on solar cell.
Heterojunction solar battery is a kind of high performance solar batteries that SANYO GS company creates, according to document [Kinoshita, T.; Fujishima, D.; Yano, A.The approaches for high efficiency HITTM solar cell with very thin (＜100 μ m) silicon wafer over23%.The 26th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 2011:871-874] report that its efficient has reached 23.7% at present.Heterojunction solar battery has utilized the advantage of thin-film technique in manufacturing process, combine the characteristics of amorphous silicon and crystalline silicon material, the sharpest edges of this solar cell are low temperature process, requirement to silicon substrate is lower, the attenuate that helps silicon substrate simultaneously, saved the cost of manufacture of solar cell effectively, high stability, battery performance can not raise with temperature and decay, the phenomenon that fails because of illumination that similar non-crystal silicon solar cell can not occur, and its preparation technology is simple, and low temperature process not only helps energy savings simultaneously, and can the optimised devices characteristic, avoided issuable performance degradation in the high-temperature process.
Its absorption to light of radial junction solar cell occurs in axially, can improve the utilization of light effectively, the separation of charge carrier simultaneously occurs in radially, reduce transport distance, reduce the compound of electron hole, effectively improve the collection efficiency of charge carrier, thereby improved the short circuit current and the conversion efficiency of solar cell significantly.
Graphene is a kind of novel material with good light permeability and conductivity that grows up, and it at room temperature has electron mobility at a high speed, reaches 1.5 * 10
4Cm
2V
-1S
-1, document [Becerril, H.A.; Mao, J.; Liu, Z.F.; Stoltenberg, R.M.; Bao, Z.N.; Chen, Y.S.Evaluation of Solution-Processed Reduced Graphene Oxide Films as Transparent Conductors.ACSNano, 2008,2 (3): 463-470] point out in, after people such as author were spun to quartz surfaces to graphene oxide and it is carried out thermal reduction and handle, its conductivity was 10
2Scm-1, and can reach 80% in 400-1800nm wave-length coverage iuuminting rate, show that this material has good printing opacity conductivity, therefore there is very big potential to be applied on the solar cell, can be used for substituting ITO as the transparent conductive oxide film.
In view of the above, the present invention has designed radially heterojunction solar battery of a kind of Graphene, this solar cell fully combines the advantage of heterojunction and radial junction solar cell, utilize the optimization performance of heterojunction boundary to reduce complex effect when improving carrier collection efficient, effectively improve the conversion efficiency of solar cell, reduce the production cost of solar cell indirectly, and the printing opacity conductivity of utilizing Graphene has improved the collection efficiency of short circuit current, this cell production process temperature is lower simultaneously, utilize the advantage of thin film fabrication technology to bring into play the advantage of crystal silicon amorphous silicon material performance again, be fit to large-scale promotion.
Summary of the invention
(1) technical problem that will solve
In view of this, the present invention combines the advantage of heterojunction solar battery and radial junction solar cell, under the prerequisite of complete and existing solar cell preparation technology compatibility, innovation structure and technological process are proposed, radially heterojunction solar battery and preparation method thereof of a kind of Graphene is provided, angle sedimentation growth of passivation film on the monocrystalline silicon nano-pillar is plunderred in utilization, the transoid amorphous silicon membrane, Graphene and TCO film, form p (n)-C-Sia/a-Si passivating film/n (p)-a-Si/ Graphene/TCO radial structure (as Fig. 1) from the inside to the outside, make metal grid lines at last on the battery top as electrode, make back of the body field in the bottom of battery, by the transformation efficiency of this new structure in the hope of the raising solar cell, reduce cost.
(2) technical scheme
For achieving the above object, the invention provides radially heterojunction solar battery of a kind of Graphene, comprising: monocrystalline substrate and be formed at p type or n type silicon nano-pillar on this monocrystalline substrate; The passivating film that on this monocrystalline substrate and this p type or n type silicon nano-pillar, forms successively, with amorphous silicon membrane, Graphene and the TCO film of silicon nano-pillar transoid; The metal gate electrode of on this TCO film, making; And the back electrode of making at this monocrystalline substrate back side.
In the such scheme, described monocrystalline substrate is n type monocrystalline substrate or p type monocrystalline substrate, and its purity is 6N.
In the such scheme, described p type or n type silicon nano-pillar, its diameter is 50nm-4000nm, highly is 10nm-5000nm.
In the such scheme, the radially heterojunction that this p type or n type silicon nano-pillar and the passivating film that forms successively on it, the amorphous silicon membrane with silicon nano-pillar transoid, Graphene and TCO film constitute.
In the such scheme, described passivating film is individual layer passivation film or lamination passivation film.Described passivating film is an intrinsic amorphous silicon, and thickness is 5nm.
In the such scheme, described and amorphous silicon membrane silicon nano-pillar transoid are n type amorphous silicon membrane when the silicon nano-pillar is p type silicon nano-pillar, and described and amorphous silicon membrane silicon nano-pillar transoid are p type amorphous silicon membrane when the silicon nano-pillar is n type silicon nano-pillar.
In the such scheme, described and amorphous silicon membrane silicon nano-pillar transoid is a doped amorphous silicon film, is phosphorus-doped amorphous silicon thin film for this doped amorphous silicon film of p type monocrystalline substrate, is the boron mixing non-crystal silicon thin film for this doped amorphous silicon film of n type monocrystalline substrate.
For achieving the above object, the present invention also provides a kind of radially method of heterojunction solar battery of Graphene for preparing, and comprising: select p type or n type monocrystalline silicon piece for use, prepare p+p knot or n+n knot overleaf, make the silicon nano-pillar at front surface; On this monocrystalline silicon piece and this silicon nano-pillar, form successively passivating film, with amorphous silicon membrane, Graphene and the TCO film of silicon nano-pillar transoid; On this TCO film, make metal gate electrode; And at this monocrystalline substrate back side making back electrode.
In the such scheme, described on this monocrystalline silicon piece and this silicon nano-pillar, form successively passivating film, with amorphous silicon membrane, Graphene and the TCO film of silicon nano-pillar transoid, comprise: growth intrinsic amorphous passivating film on this monocrystalline silicon piece and this silicon nano-pillar, this intrinsic amorphous passivating film is individual layer or lamination passivating film; Growing n-type or the heavily doped amorphous silicon film of p type on this intrinsic amorphous passivating film; Transforming growth graphene layer on this n type or the heavily doped amorphous silicon film of p type; Growth TCO film on this graphene layer, the radially heterojunction that this silicon nano-pillar and the intrinsic amorphous passivating film, n type or the heavily doped amorphous silicon film of p type that form successively on it, graphene layer and TCO film constitute.
In the such scheme, described intrinsic amorphous passivating film, n type or the heavily doped amorphous silicon film of p type, graphene layer or TCO film all adopt plunders angle sedimentation preparation.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this Graphene provided by the invention heterojunction solar battery and preparation method thereof radially, intrinsic amorphous passivating film, n type or the heavily doped amorphous silicon film of p type, graphene layer or TCO film all adopt plunders angle sedimentation preparation, but growth fraction is film uniformly, avoided traditional VLS high-temperature technology, compatible mutually with the low temperature process of heterojunction, help the raising of battery efficiency.In passivation film and transoid amorphous silicon membrane growth course, control the structure and the performance of film by adjustments of gas flow-rate ratio, depositing temperature and radio-frequency power.
2, this Graphene provided by the invention heterojunction solar battery and preparation method thereof radially, the absorption of sunlight occurs in axially, increased the propagation light path of sunlight in battery effectively, and the absorption coefficient of amorphous silicon has improved absorbing of light greater than crystal silicon.
3, this Graphene provided by the invention is heterojunction solar battery and preparation method thereof radially, adopt crystal silicon/non crystal heterogeneous agglomeration the common photic attenuating effect of amorphous silicon battery can not occur, between crystal silicon and amorphous silicon, add passivation layer simultaneously and can reduce interface state density, reduce surface recombination, solved the big problem of radial junction surface recombination, open circuit voltage and fill factor, curve factor have been improved, this kind battery is made at low temperature environment simultaneously, require lower to substrate, and radial junction all has very big advantage on the transporting and collect of charge carrier, improved minority carrier lifetime to a great extent.
4, this Graphene provided by the invention heterojunction solar battery and preparation method thereof radially, combine the grapheme material that new development is got up, its good light transmission and conductivity have been made full use of, improved the transmission of charge carrier, but do not increase absorption, good effect is played in the collection of charge carrier light.
In sum, battery structure of the present invention has many advantages and practical value, has large improvement technically, and good effect is arranged, and is fit to promote.
Description of drawings
Fig. 1 is according to the Graphene of the embodiment of the invention structural representation of heterojunction solar battery radially; Wherein, what illustrate is single silicon nano-pillar, and its each layer is respectively: 1, p type monocrystalline silicon, 2, passivating film, 3, the heavily doped amorphous silicon membrane of n type, 4, the Graphene thin layer, 5, the TCO film, 6, metal gates, 7, the back of the body;
Fig. 2 is according to the preparation Graphene of the embodiment of the invention method flow diagram of heterojunction solar battery radially;
Fig. 3 is the Ag electrode/TCO/ Graphene/np heterojunction/Al aluminum back surface field schematic diagram according to the embodiment of the invention, its each layer is respectively: 1, p type monocrystalline silicon, 2, SiO2 and i-a-Si lamination passivating film, 3, the heavily doped amorphous silicon membrane of n type, 4, Graphene thin layer, 5, TCO film, 6, the Ag electrode, 7, Al carries on the back;
Fig. 4 is the Ag electrode/TCO/ Graphene/npp+ knot/Graphene/TCO/Ag electrode structure schematic diagram according to the embodiment of the invention, its each layer is respectively: 1, p type monocrystalline silicon, 2, i-a-Si film, 3, the heavily doped amorphous silicon membrane of n type, 4, p+ amorphous silicon membrane, 5, Graphene thin layer, 6, the TCO film, 7, the Ag electrode.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is that this solar cell comprises according to the Graphene of the embodiment of the invention structural representation of heterojunction solar battery radially: monocrystalline substrate and be formed at p type or n type silicon nano-pillar on this monocrystalline substrate; The passivating film that on this monocrystalline substrate and this p type or n type silicon nano-pillar, forms successively, with amorphous silicon membrane, Graphene and transparent conductive oxide (transparent conductive oxide, the TCO) film of silicon nano-pillar transoid; The metal gate electrode of on this TCO film, making; And the back electrode of making at this monocrystalline substrate back side.
Wherein, described monocrystalline substrate is n type monocrystalline substrate or p type monocrystalline substrate, and its purity is 6N.Described p type or n type silicon nano-pillar, its diameter is 50nm-4000nm, highly is 10nm-5000nm.The radially heterojunction that this p type or n type silicon nano-pillar and the passivating film that forms successively on it, the amorphous silicon membrane with silicon nano-pillar transoid, Graphene and TCO film constitute.Described passivating film is individual layer passivation film or lamination passivation film.Described passivating film is an intrinsic amorphous silicon, and thickness is 5nm.Described and amorphous silicon membrane silicon nano-pillar transoid are n type amorphous silicon membrane when the silicon nano-pillar is p type silicon nano-pillar, and described and amorphous silicon membrane silicon nano-pillar transoid are p type amorphous silicon membrane when the silicon nano-pillar is n type silicon nano-pillar.Described and amorphous silicon membrane silicon nano-pillar transoid is a doped amorphous silicon film, is phosphorus-doped amorphous silicon thin film for this doped amorphous silicon film of p type monocrystalline substrate, is the boron mixing non-crystal silicon thin film for this doped amorphous silicon film of n type monocrystalline substrate.
Based on Graphene shown in Figure 1 heterojunction solar battery radially, Fig. 2 shows the radially method of heterojunction solar battery of this Graphene of preparation, may further comprise the steps:
Step 1: select p type or n type monocrystalline silicon piece for use, prepare p+p knot or n+n knot overleaf, make the silicon nano-pillar at front surface;
Step 2: on this monocrystalline silicon piece and this silicon nano-pillar, form successively passivating film, with amorphous silicon membrane, Graphene and the TCO film of silicon nano-pillar transoid;
Step 3: on this TCO film, make metal gate electrode; And
Step 4: make back electrode at this monocrystalline substrate back side.
On this monocrystalline silicon piece and this silicon nano-pillar, form successively described in the step 2 passivating film, with amorphous silicon membrane, Graphene and the TCO film of silicon nano-pillar transoid, comprising:
Growth intrinsic amorphous passivating film on this monocrystalline silicon piece and this silicon nano-pillar, this intrinsic amorphous passivating film is individual layer or lamination passivating film;
Growing n-type or the heavily doped amorphous silicon film of p type on this intrinsic amorphous passivating film;
Transforming growth graphene layer on this n type or the heavily doped amorphous silicon film of p type;
Growth TCO film on this graphene layer, the radially heterojunction that this silicon nano-pillar and the intrinsic amorphous passivating film, n type or the heavily doped amorphous silicon film of p type that form successively on it, graphene layer and TCO film constitute.
Wherein, described intrinsic amorphous passivating film, n type or the heavily doped amorphous silicon film of p type, graphene layer or TCO film all adopt and plunder angle sedimentation preparation.Plunderring the angle deposition technique is to tilt to be placed on substrate on the device that can horizontally rotate at a certain angle, utilize technology growth material on substrate such as electron beam evaporation, magnetron sputtering, chemical deposition then, can make material more evenly be grown on the comparatively complicated substrate of surface texture.
Below by the operating procedure of specific embodiment the present invention is done to describe in further detail, but the present invention not only is confined to following examples:
Example one
With reference to Fig. 1, Fig. 1 is the schematic diagram of single silicon nano-pillar, and its each layer is respectively: 1, p type monocrystalline silicon, 2, passivating film, 3, the heavily doped amorphous silicon membrane of n type, 4, the Graphene thin layer, 5, the TCO film, 6, metal gates, 7, the back of the body.The preparation method of solar cell shown in Figure 1 is as follows:
Step 1: on p type monocrystalline silicon, make the silicon nano-pillar;
Step 2: the monocrystalline silicon that will be shaped on nano-pillar cleans with the RCA method of standard;
Step 3: (hot wire chemical vapor deposition HWCVD) is plunderred angle deposition SiO in the heated filament vapour deposition
2Nano thin-film, thickness is approximately 5-8nm;
Step 4:HWCVD is plunderred angle deposition intrinsic amorphous silicon membrane, and thickness is approximately 3-10nm;
Step 5:HWCVD is plunderred the heavily doped amorphous silicon membrane of angle deposition N type, and thickness is approximately 5-20nm;
Step 6:CVD is plunderred angle deposition Graphene thin layer, and thickness is approximately about 10nm;
Step 7: magnetron sputtering is plunderred angle deposition TCO film;
Step 8: silk screen printing low temperature Ag electrode;
Step 9: silk screen printing Al carries on the back the field.
In the above-mentioned steps, intrinsic amorphous silicon layer and SiO
2Film reduces the compound of surface as the lamination passivation film.
Concrete preparation process in this example is as follows:
1. cleaning
RCA method with standard in the cleaning process is cleaned, and the silicon chip after the cleaning dries up with nitrogen, anhydrous mark, spot.
2. HWCVD technology
Use multi-cavity chamber HWCVD to plunder angle deposition SiO respectively
2Nano thin-film, intrinsic amorphous silicon, n type amorphous silicon, substrate rotation in the deposition process, depositing temperature is approximately 200 ℃～300 ℃.
3. magnetron sputtering technique
Utilize magnetron sputtering to plunder angle deposition TCO, substrate rotation in the deposition process, 200 ℃～300 ℃ of depositing temperatures, the about 80nm of TCO film thickness.
4. silk screen printing process
With screen process press silk-screen low temperature Ag slurry, Al slurry, form Ag electrode and Al back of the body field, avoid the high temperature sintering step.
Example two
As shown in Figure 3, Fig. 3 is the Ag electrode/TCO/ Graphene/np heterojunction/Al aluminum back surface field schematic diagram according to the embodiment of the invention, and its each layer is respectively: 1, p type monocrystalline silicon, 2, SiO
2With i-a-Si lamination passivating film, 3, the heavily doped amorphous silicon membrane of n type, 4, the Graphene thin layer, 5, the TCO film, 6, the Ag electrode, 7, Al carries on the back.The preparation method of solar cell shown in Figure 3 is as follows:
Step 1: on p type monocrystalline silicon, make the silicon nano-pillar;
Step 2: the monocrystalline silicon that will be shaped on nano-pillar cleans with the RCA method of standard;
Step 3: at two-sided angle cvd silicon oxide and the intrinsic amorphous silicon film of plunderring of monocrystalline silicon piece, thickness is approximately 3-10nm respectively with HWCVD;
Step 4: plunder the heavily doped amorphous silicon membrane of angle deposition n type with HWCVD on silicon nano-pillar direction, thickness is approximately 5-20nm;
Step 5: at silicon chip backside deposition p+ amorphous silicon membrane, thickness is approximately 5-20nm with HWCVD;
Step 6: plunder angle deposition Graphene thin layer with CVD on n type amorphous silicon, thickness is approximately about 10nm;
Step 7: two-sided magnetron sputtering is plunderred angle deposition TCO film;
Step 8: silk screen printing low temperature Ag electrode on the TCO film;
In the above-mentioned steps, the heterojunction that constitutes at the p+ of silicon chip backside deposition amorphous silicon membrane and p type crystal silicon is as the back of the body, and passivating film is an individual layer intrinsic amorphous silicon film.
Concrete preparation process in this example is as follows:
1. cleaning
RCA method with standard in the cleaning process is cleaned, and the silicon chip after the cleaning dries up with nitrogen, anhydrous mark, spot.
2. HWCVD technology
Use multi-cavity chamber HWCVD to plunder angle deposition intrinsic amorphous silicon respectively, n type amorphous silicon, the p+ amorphous silicon, substrate rotation in the deposition process, depositing temperature is approximately 200 ℃～300 ℃.
3. magnetron sputtering technique
Utilize magnetron sputtering to plunder angle deposition TCO, substrate rotation in the deposition process, 200 ℃～300 ℃ of depositing temperatures, the about 80nm of TCO film thickness.
4. silk screen printing process
With screen process press silk-screen low temperature Ag slurry, form the Ag electrode, avoid the high temperature sintering step.
Example three
As shown in Figure 4, Fig. 4 is the Ag electrode/TCO/ Graphene/npp+ knot/Graphene/TCO/Ag electrode structure schematic diagram according to the embodiment of the invention, its each layer is respectively: 1, p type monocrystalline silicon, 2, i-a-Si film, 3, the heavily doped amorphous silicon membrane of n type, 4, the p+ amorphous silicon membrane, 5, the Graphene thin layer, 6, TCO film, 7, the Ag electrode.The preparation method of solar cell shown in Figure 4 is as follows:
Step 1: on p type monocrystalline silicon, make the silicon nano-pillar;
Step 2: the monocrystalline silicon that will be shaped on nano-pillar cleans with the RCA method of standard;
Step 3: at the two-sided angle deposition intrinsic amorphous silicon membrane of plunderring of monocrystalline silicon piece, thickness is approximately 3-10nm with HWCVD;
Step 4: plunder the heavily doped amorphous silicon membrane of angle deposition n type with HWCVD on silicon nano-pillar direction, thickness is approximately 5-20nm;
Step 5: at silicon chip backside deposition p+ amorphous silicon membrane, thickness is approximately 5-20nm with HWCVD;
Step 6: plunder angle deposition Graphene thin layer with CVD on n type amorphous silicon, thickness is approximately about 10nm;
Step 7: two-sided magnetron sputtering is plunderred angle deposition TCO film;
Step 8: silk screen printing low temperature Ag electrode on the TCO film;
In the above-mentioned steps, the heterojunction that constitutes at the p+ of silicon chip backside deposition amorphous silicon membrane and p type crystal silicon is as the back of the body, and passivating film is an individual layer intrinsic amorphous silicon film.
Concrete preparation process in this example is as follows:
1. cleaning
RCA method with standard in the cleaning process is cleaned, and the silicon chip after the cleaning dries up with nitrogen, anhydrous mark, spot.
2. HWCVD technology
Use multi-cavity chamber HWCVD to plunder angle deposition intrinsic amorphous silicon respectively, n type amorphous silicon, the p+ amorphous silicon, substrate rotation in the deposition process, depositing temperature is approximately 200 ℃～300 ℃.
3. magnetron sputtering technique
Utilize magnetron sputtering to plunder angle deposition TCO, substrate rotation in the deposition process, 200 ℃～300 ℃ of depositing temperatures, the about 80nm of TCO film thickness.
4. silk screen printing process
With screen process press silk-screen low temperature Ag slurry, form the Ag electrode, avoid the high temperature sintering step.
From the foregoing description as can be seen, the invention relates to a kind of Graphene radially heterojunction solar battery and preparation method.Preparation technology of the present invention combines the production technology of radial junction solar cell and the production technology of heterojunction solar battery, the battery of this kind structure comprises p or n type monocrystalline silicon nano-pillar, passivating film, n type or the heavily doped amorphous silicon film of p type, the Graphene thin layer, the TCO film, the metal gates on battery top is as electrode and back of the body field, the comprehensive advantage of radial junction battery and heterojunction battery of Zhi Bei battery by this method, utilize the high efficiency and the low temperature process of heterojunction battery, can reduce production costs indirectly, radial junction can effectively improve absorbing of light simultaneously, improves the collection efficiency of photo-generated carrier, thereby improves the efficient of battery effectively, and the conductivity of utilizing Graphene improves the collecting action of electrode pair electric current, improve short circuit current, utilize the low temperature process of heterojunction simultaneously, preparation technology is simple, temperature stability is good, is suitable for large-scale promotion application.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. Graphene heterojunction solar battery radially is characterized in that, comprising:
Monocrystalline substrate and be formed at p type or n type silicon nano-pillar on this monocrystalline substrate;
The passivating film that on this monocrystalline substrate and this p type or n type silicon nano-pillar, forms successively, with amorphous silicon membrane, Graphene and the TCO film of silicon nano-pillar transoid;
The metal gate electrode of on this TCO film, making; And
The back electrode of making at this monocrystalline substrate back side.
2. Graphene according to claim 1 is heterojunction solar battery radially, it is characterized in that, described monocrystalline substrate is n type monocrystalline substrate or p type monocrystalline substrate, and its purity is 6N.
3. Graphene according to claim 1 is heterojunction solar battery radially, it is characterized in that, described p type or n type silicon nano-pillar, and its diameter is 50nm-4000nm, highly is 10nm-5000nm.
4. Graphene according to claim 1 is heterojunction solar battery radially, it is characterized in that the radially heterojunction that this p type or n type silicon nano-pillar and the passivating film that forms successively on it, the amorphous silicon membrane with silicon nano-pillar transoid, Graphene and TCO film constitute.
5. according to claim 1 or 4 described Graphenes heterojunction solar battery radially, it is characterized in that described passivating film is individual layer passivation film or lamination passivation film.
6. Graphene according to claim 5 is heterojunction solar battery radially, it is characterized in that, described passivating film is an intrinsic amorphous silicon, and thickness is 5nm.
7. Graphene according to claim 1 is heterojunction solar battery radially, it is characterized in that, described and amorphous silicon membrane silicon nano-pillar transoid are n type amorphous silicon membrane when the silicon nano-pillar is p type silicon nano-pillar, and described and amorphous silicon membrane silicon nano-pillar transoid are p type amorphous silicon membrane when the silicon nano-pillar is n type silicon nano-pillar.
8. Graphene according to claim 1 is heterojunction solar battery radially, it is characterized in that, described and amorphous silicon membrane silicon nano-pillar transoid is a doped amorphous silicon film, for this doped amorphous silicon film of p type monocrystalline substrate is phosphorus-doped amorphous silicon thin film, is the boron mixing non-crystal silicon thin film for this doped amorphous silicon film of n type monocrystalline substrate.
9. one kind prepares in the claim 1 to 8 the radially method of heterojunction solar battery of each described Graphene, it is characterized in that, comprising:
Select p type or n type monocrystalline silicon piece for use, prepare p+p knot or n+n knot overleaf, make the silicon nano-pillar at front surface;
On this monocrystalline silicon piece and this silicon nano-pillar, form successively passivating film, with amorphous silicon membrane, Graphene and the TCO film of silicon nano-pillar transoid;
On this TCO film, make metal gate electrode; And
Make back electrode at this monocrystalline substrate back side.
10. the radially method of heterojunction solar battery of Graphene for preparing according to claim 9, it is characterized in that, described on this monocrystalline silicon piece and this silicon nano-pillar, form successively passivating film, with amorphous silicon membrane, Graphene and the TCO film of silicon nano-pillar transoid, comprising:
Growth intrinsic amorphous passivating film on this monocrystalline silicon piece and this silicon nano-pillar, this intrinsic amorphous passivating film is individual layer or lamination passivating film;
Growing n-type or the heavily doped amorphous silicon film of p type on this intrinsic amorphous passivating film;
Transforming growth graphene layer on this n type or the heavily doped amorphous silicon film of p type;
Growth TCO film on this graphene layer, the radially heterojunction that this silicon nano-pillar and the intrinsic amorphous passivating film, n type or the heavily doped amorphous silicon film of p type that form successively on it, graphene layer and TCO film constitute.
11. the radially method of heterojunction solar battery of Graphene for preparing according to claim 10 is characterized in that, described intrinsic amorphous passivating film, n type or the heavily doped amorphous silicon film of p type, graphene layer or TCO film all adopt plunders angle sedimentation preparation.
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| CN113437145A (en) * | 2021-06-08 | 2021-09-24 | 苏州奥谱毫通电子科技有限公司 | Preparation method of III-nitride transistor and transistor |
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