CN103956399A - Silicon solar cell backboard and manufacturing method thereof - Google Patents
Silicon solar cell backboard and manufacturing method thereof Download PDFInfo
- Publication number
- CN103956399A CN103956399A CN201410153100.8A CN201410153100A CN103956399A CN 103956399 A CN103956399 A CN 103956399A CN 201410153100 A CN201410153100 A CN 201410153100A CN 103956399 A CN103956399 A CN 103956399A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- silicon
- silicon solar
- doped layer
- back plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 89
- 239000010703 silicon Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 37
- 239000010936 titanium Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- 239000004411 aluminium Substances 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 238000005245 sintering Methods 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract 4
- 238000000576 coating method Methods 0.000 abstract 4
- 230000004927 fusion Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a silicon solar cell backboard and a manufacturing method of the silicon solar cell backboard. The silicon solar cell backboard comprises a silicon slice substrate and an aluminum coating, wherein the aluminum coating is printed on the silicon slice substrate; a titanium doped layer is arranged between the aluminum coating and the silicon slice substrate. The manufacturing method of the silicon solar cell backboard comprises the following steps that (a), the silicon slice substrate is provided; (b), titanium atoms are injected on the back surface of the silicon slice substrate in an ion-injection mode; (c), the silicon slice substrate is arranged in a laser rapid fusion system, and the titanium doped layer is formed on the back surface of the silicon slice substrate; (d), aluminum paste is printed on the back surface of the silicon slice substrate with the titanium doped layer, the back surface of the silicon slice substrate with the titanium doped layer is sintered, and then the aluminum coating covering the titanium doped layer is formed. According to the silicon solar cell backboard and the manufacturing method of the silicon solar cell backboard, the titanium within the appointed concentration is evenly doped on the back surface of the silicon slice substrate to form an infrared absorption layer, and therefore the absorption coefficient of a silicon solar cell on the infrared band is improved greatly, and the efficiency of the solar cell is improved.
Description
Technical field
The present invention relates to a kind of solar module and preparation method thereof, relate in particular to a kind of silicon solar cell back plate and preparation method thereof.
Background technology
The back surface field of existing silicon solar cell is made and is generally used aluminium paste to print the method for sintering after a while at silicon chip back side.Comparative maturity of technology at present, the advantage of aluminium back surface field embodies in the commodity production of silicon solar cell.Titanium elements is as the impurity element in a kind of silicon, after nearest research shows (to exceed mott phase Variable Composition) in the time that the content of titanium elements in silicon reaches finite concentration, silicon can be with band gap in can suppress non-radiative compound impurity band by forming, thereby silicon is strengthened the ultrared absorption between 1000nm～2000nm.At present the efficiency of ordinary silicon solar cell is along with the maturation of technique, convergence and theoretical efficiency gradually, and efficiency has been difficult to increase substantially.And titanium elements is carried out to silicon chip top doping, to make the technology application of typical Intermediate Gray solar cell extremely difficult, at present still in phase of basic research.Because infrared band has very strong penetration capacity in silicon chip, penetrable to silicon chip back side top layer, therefore, be necessary to provide a kind of silicon solar cell back plate and preparation method thereof, introduce titanium doped layer, promote silicon solar cell efficiency.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of silicon solar cell back plate and preparation method thereof, can increase the absorption of silicon solar cell at infrared spectrum wave band, improve the photoelectric conversion efficiency of silicon solar cell, and simple in structure, be easy to apply.
The present invention solves the problems of the technologies described above the technical scheme adopting to be to provide a kind of silicon solar cell back plate, comprises silicon chip substrate and aluminium film, and wherein, described aluminium film is printed on silicon chip substrate, is provided with titanium doped layer between described aluminium film and silicon chip substrate.
Above-mentioned silicon solar cell back plate, wherein, the thickness of described titanium doped layer is 10～30nm.
Above-mentioned silicon solar cell back plate, wherein, described silicon chip substrate is P type polysilicon chip, the thickness of described P type polysilicon chip is 180 μ m.
The present invention, for solving the problems of the technologies described above the manufacture method that a kind of above-mentioned silicon solar cell back plate is also provided, wherein, comprises the steps: a) first to provide silicon chip substrate; B) then pass through the mode Implanted Titanium atom of Implantation on silicon wafer-based backboard surface; C) again silicon chip substrate is put into laser Flashmelt system, formed titanium doped layer on silicon wafer-based backboard surface; D) finally aluminium paste printing and sintering are carried out in the silicon wafer-based backboard surface with titanium doped layer, form the aluminium film covering on titanium doped layer.
The manufacture method of above-mentioned silicon solar cell back plate, wherein, the silicon chip substrate of described step in a) is P type polysilicon chip, and the thickness of described P type polysilicon chip is 180 μ m, and electrical resistivity range is 1～3 Ω cm.
The manufacture method of above-mentioned silicon solar cell back plate, wherein, the described step b) implantation dosage of middle titanium atom is 10
16cm
-2.
The manufacture method of above-mentioned silicon solar cell back plate, wherein, described step c) middle lf annealing time is 10～20ns, the titanium doped maximum concentration in the titanium doped layer of formation is 5*10
19cm
-3～1*10
20cm
-3.
The manufacture method of above-mentioned silicon solar cell back plate, wherein, described steps d) in sintering temperature be 800 DEG C, sintering time is 20～40s.
The present invention contrasts prior art following beneficial effect: silicon solar cell back plate provided by the invention and preparation method thereof, before silicon solar cell is made aluminium back surface field, form infrared absorption layer at the titanium elements of silicon chip substrate back top layer Uniform Doped prescribed concentration scope; After adulterating by ion implantation, adopt lf to anneal, and then carry out the printing of aluminium back surface field and sintering, thereby can increase substantially the absorption coefficient of silicon solar cell to infrared band, and then improve the efficiency of solar cell.
Brief description of the drawings
Fig. 1 is that silicon solar cell back plate of the present invention is made schematic flow sheet.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
The invention provides a kind of silicon solar cell back plate, comprise silicon chip substrate and aluminium film, wherein, described aluminium film is printed on silicon chip substrate, is provided with titanium doped layer between described aluminium film and silicon chip substrate.The thickness of described titanium doped layer is preferably 10～30nm; Described silicon chip substrate can be P type polysilicon chip, and the thickness of described P type polysilicon chip is about 180 μ m.
Fig. 1 is that silicon solar cell back plate of the present invention is made schematic flow sheet.
Refer to Fig. 1, the manufacture method of silicon solar cell back plate provided by the invention is method Doped with Titanium element (the about 5*10 to finite concentration that adopts Implantation at silicon chip back side
19cm
-3～1*10
20cm
-3), use lf short annealing processing, make titanium elements in narrower depth bounds, in (10～30nm), keep higher CONCENTRATION DISTRIBUTION, to reach the object of abundant introducing impurity band; Then silicon chip back side is carried out carrying out high temperature Fast Sintering (about 40s) after aluminium paste printing.Thereby make the silicon solar cell back surface field of preparation can increase the absorption that is easy to the infrared band that penetrates ordinary silicon solar cell, thereby improve the efficiency of solar cell.
Concrete steps are as follows:
Step S1: first silicon chip substrate is provided; The present embodiment preferred type polysilicon chip, thickness approximately 180 μ m, electrical resistivity range is 1～3 Ω cm;
Step S2: then pass through the mode Implanted Titanium atom of Implantation on polysilicon chip back of the body surface; Implantation dosage is about 10
16cm
-2
Step S3: polysilicon chip is put into laser Flashmelt system, the melting time forms titanium doped layer on polysilicon chip back of the body surface within being controlled at 20ns again, and the titanium doped maximum concentration in the titanium doped layer of formation is 5*10
19cm
-3～1*10
20cm
-3;
Step S4: finally aluminium paste printing, sintering are carried out in the polysilicon chip back of the body surface of adulterating, sintering is taked the mode of high temperature Fast Sintering, within sintering time is controlled at 40s at 800 DEG C, forms the aluminium film covering on titanium doped layer.Other preparation process of this solar battery sheet are identical with common polysilicon solar battery slice, and this is no longer going to repeat them.
Although the present invention discloses as above with preferred embodiment; so it is not in order to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when doing a little amendment and perfect, therefore protection scope of the present invention is worked as with being as the criterion that claims were defined.
Claims (8)
1. a silicon solar cell back plate, comprises silicon chip substrate and aluminium film, it is characterized in that, described aluminium film is printed on silicon chip substrate, is provided with titanium doped layer between described aluminium film and silicon chip substrate.
2. silicon solar cell back plate as claimed in claim 1, is characterized in that, the thickness of described titanium doped layer is 10～30nm.
3. silicon solar cell back plate as claimed in claim 1 or 2, is characterized in that, described silicon chip substrate is P type polysilicon chip, and the thickness of described P type polysilicon chip is 180 μ m.
4. a manufacture method for silicon solar cell back plate as claimed in claim 1, is characterized in that, comprises the steps:
A) first provide silicon chip substrate;
B) then pass through the mode Implanted Titanium atom of Implantation on silicon wafer-based backboard surface;
C) again silicon chip substrate is put into laser Flashmelt system, formed titanium doped layer on silicon wafer-based backboard surface;
D) finally aluminium paste printing and sintering are carried out in the silicon wafer-based backboard surface with titanium doped layer, form the aluminium film covering on titanium doped layer.
5. the manufacture method of silicon solar cell back plate as claimed in claim 4, is characterized in that, the silicon chip substrate of described step in a) is P type polysilicon chip, and the thickness of described P type polysilicon chip is 180 μ m, and electrical resistivity range is 1～3 Ω cm.
6. the manufacture method of silicon solar cell back plate as claimed in claim 4, is characterized in that, the described step b) implantation dosage of middle titanium atom is 10
16cm
-2.
7. the manufacture method of silicon solar cell back plate as claimed in claim 4, is characterized in that, described step c) middle lf annealing time is 10～20ns, and the titanium doped maximum concentration in the titanium doped layer of formation is 5*10
19cm
-3～1*10
20cm
-3.
8. the manufacture method of silicon solar cell back plate as claimed in claim 4, is characterized in that, described steps d) in sintering temperature be 800 DEG C, sintering time is 20～40s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410153100.8A CN103956399B (en) | 2014-04-16 | 2014-04-16 | Silicon solar cell backboard and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410153100.8A CN103956399B (en) | 2014-04-16 | 2014-04-16 | Silicon solar cell backboard and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103956399A true CN103956399A (en) | 2014-07-30 |
| CN103956399B CN103956399B (en) | 2017-01-11 |
Family
ID=51333649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410153100.8A Active CN103956399B (en) | 2014-04-16 | 2014-04-16 | Silicon solar cell backboard and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103956399B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112289893A (en) * | 2020-12-15 | 2021-01-29 | 杭州旭菱光伏电力科技有限公司 | Efficient solar panel manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
| CN102191563A (en) * | 2011-04-22 | 2011-09-21 | 中国科学院半导体研究所 | Preparation method of codoped silicon-base impurity intermediate belt material |
| CN102496638A (en) * | 2011-11-28 | 2012-06-13 | 中国科学院半导体研究所 | Deep-level impurity-doped crystalline silicon infrared detector and preparation method thereof |
-
2014
- 2014-04-16 CN CN201410153100.8A patent/CN103956399B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
| CN102191563A (en) * | 2011-04-22 | 2011-09-21 | 中国科学院半导体研究所 | Preparation method of codoped silicon-base impurity intermediate belt material |
| CN102496638A (en) * | 2011-11-28 | 2012-06-13 | 中国科学院半导体研究所 | Deep-level impurity-doped crystalline silicon infrared detector and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112289893A (en) * | 2020-12-15 | 2021-01-29 | 杭州旭菱光伏电力科技有限公司 | Efficient solar panel manufacturing method |
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| Publication number | Publication date |
|---|---|
| CN103956399B (en) | 2017-01-11 |
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