CN106816494A - A kind of method of heterojunction solar battery reduction series resistance - Google Patents
A kind of method of heterojunction solar battery reduction series resistance Download PDFInfo
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- CN106816494A CN106816494A CN201510872214.2A CN201510872214A CN106816494A CN 106816494 A CN106816494 A CN 106816494A CN 201510872214 A CN201510872214 A CN 201510872214A CN 106816494 A CN106816494 A CN 106816494A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 45
- 230000008021 deposition Effects 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 238000009832 plasma treatment Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 230000006378 damage Effects 0.000 claims description 4
- 238000004070 electrodeposition Methods 0.000 claims description 4
- 238000010146 3D printing Methods 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005036 potential barrier Methods 0.000 abstract description 2
- 238000001179 sorption measurement Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 15
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 3
- 238000003851 corona treatment Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
It is as follows the invention discloses a kind of method of heterojunction solar battery reduction series resistance, including step：In the face deposition intrinsic amorphous silicon layer of n-type silicon chip one and N-shaped amorphous silicon layer, another side deposition intrinsic amorphous silicon layer and p-type amorphous silicon layer；Transparent conductive oxide film is deposited on amorphous silicon layer surface；Metal grid lines are formed in transparent conductive oxide film layer surface；Wherein, methods described is additionally included in the surface or transparent conductive oxide film surface of deposition of amorphous silicon layers and carries out plasma treatment.The present invention eliminates the adsorption layer or oxide layer of amorphous silicon layer and transparent conductive oxide film layer surface, reduce the contact resistance that interface potential barrier is caused, so as to improve the fill factor, curve factor and conversion efficiency of battery, the performance of heterojunction solar product can be lifted, reduce the unit cost of production.
Description
Technical field
The present invention relates to solar cell manufacture field, more particularly to a kind of method that heterojunction solar battery reduces series resistance.
Background technology
Heterojunction solar battery is in solar battery technology because it has conversion efficiency high, simple technological process and relatively low temperature coefficient and most noticeable.Compared with conventional diffusion method battery, the carrier transmission in hetero-junction solar cell will be by including：The boundary layer of silicon chip surface and positive and negative amorphous silicon layer；The boundary layer of doping type non-crystalline silicon and transparent membrane oxide；The boundary layer of transparent membrane oxide skin(coating) and metal grid lines, the boundary layer between several different kind of material, influence of these boundary layers to cell series resistance and fill factor, curve factor is huge.Resistance in heterojunction solar battery manufacture generally by adjusting electrical conductivity, the doping of adjustment transparent membrane oxide skin(coating), the work function of adjustment metal grid lines or the particle size of doped amorphous silicon layer to reduce conductive layer and boundary layer.
But the doping of the electrical conductivity and transparent membrane oxide skin(coating) for improving amorphous silicon layer can also negatively affect respective translucency simultaneously, there are some researches show the work function of each layer is not only influenceed by each layer doping and structure, the surface very big influence that extremely son equally has.Therefore limited in itself by light transmittance and material character, the space for reducing hetero-junction solar cell series resistance is limited.
The content of the invention
Regarding to the issue above, the invention provides a kind of method of heterojunction solar battery reduction series resistance, solve by the electrical conductivity by adjusting doped amorphous silicon layer, the doping of adjustment transparent membrane oxide skin(coating), the work function of adjustment metal grid lines or particle size to reduce the resistance of conductive layer and boundary layer, limited in itself by light transmittance and material character, reduced the limited defect in the space of hetero-junction solar cell series resistance.
In order to solve the above technical problems, the technical solution adopted in the present invention is：A kind of method of heterojunction solar battery reduction series resistance, is included in the face deposition intrinsic amorphous silicon layer of n-type silicon chip one and N-shaped amorphous silicon layer, another side deposition intrinsic amorphous silicon layer and p-type amorphous silicon layer；Transparent conductive oxide film is deposited on amorphous silicon layer surface；Metal grid lines are formed in transparent conductive oxide film layer surface；Wherein, methods described is additionally included in the surface or transparent conductive oxide film surface of deposition of amorphous silicon layers and carries out plasma treatment：Silicon chip is placed in plasma process chamber, plasma is excited using radio-frequency power supply after reaction pressure is reached, after plasma exciatiaon, use low power processes to process to prevent the destruction to amorphous silicon layer or transparent conductive oxide film.
Further, the reaction pressure is 0.1-10torr.
Further, the gas ions handling process is using one of hydrogen, helium, argon gas or mixed gas.
Further, the low power processes are processed as energy density in 2mW/cm2-100mW/cm2Between, process time is between 5-120sec.
Further, it is 13.56MHz-40MHz that the radio-frequency power supply uses frequency.
Further, the metal grid lines are silver grating line or copper grid line, are realized using the method for silk-screen printing, electrochemical deposition, 3D printing or inkjet printing.
From the above-mentioned description to structure of the present invention, compared to the prior art, the invention has the advantages that：A kind of method of heterojunction solar battery reduction series resistance of the present invention, eliminate the adsorption layer or oxide layer of amorphous silicon layer and transparent conductive oxide film layer surface, reduce the contact resistance that interface potential barrier is caused, so as to improve the fill factor, curve factor and conversion efficiency of battery, technical process is simple, it is suitable to industrialized production, the performance of heterojunction solar product can be lifted, reduces the unit cost of production.
Brief description of the drawings
The accompanying drawing for constituting the part of the application is used for providing a further understanding of the present invention, and schematic description and description of the invention is used to explain the present invention, does not constitute inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is a kind of process chart of the method for heterojunction solar battery reduction series resistance of the invention；
Fig. 2 is the process chart of the embodiment of the present invention 1；
Fig. 3 is the process chart of the embodiment of the present invention 2.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with drawings and Examples, the present invention will be described in further detail.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
A kind of method of heterojunction solar battery reduction series resistance with reference to shown in Fig. 1~Fig. 2, solve by the electrical conductivity by adjusting doped amorphous silicon layer, the doping of adjustment transparent membrane oxide skin(coating), the work function of adjustment metal grid lines or particle size to reduce the resistance of conductive layer and boundary layer, limited in itself by light transmittance and material character, reduced the limited defect in the space of hetero-junction solar cell series resistance.Concrete operation step is as follows：
Step S101, the face deposition intrinsic amorphous silicon layer of n-type silicon chip one and N-shaped amorphous silicon layer, another side deposition intrinsic amorphous silicon layer and p-type amorphous silicon layer successively after having matte and cleaning；
Step S102, by silicon chip conductive oxide film layer deposition it is preposition in plasma process chamber, be passed through one of hydrogen, helium, argon gas or their mixed gas；When corona treatment air pressure is between 0.1-10torr, plasma is excited using the radio-frequency power supply of 13.56MHz-40MHz；After plasma exciatiaon, low power processes are used to process to prevent the destruction to amorphous silicon layer, the energy density of plasma exciatiaon and process for stabilizing is in 2mW/cm2-100mW/cm2Between, the time for the treatment of is between 5-120sec；
Step S103, silicon chip is entered into magnetron sputtering chamber in vacuum environment, the lamination of conductive oxide film layer or conductive oxide film layer and other metals；
If step S104, in step S103 only conductive oxide film layers, the corona treatment of step S102 is carried out again after conductive oxide film layer deposition；
Step S105, formed in conductive oxide film layer surface and metal grid lines and annealed, the metal grid lines are silver grating line or copper grid line, are realized using silk-screen printing, electrochemical deposition, 3D printing or inkjet printing methods.
The series resistance significant portion of hetero-junction solar cell is influenceed with the contact resistance and conductive oxide film layer of conductive oxide film layer by a-Si with the contact resistance of metal grid lines.The present invention is surface-treated before conductive oxide film layer deposition or before metal grid lines are formed by the way of plasma treatment to supplied materials, the a-Si layers of organic molecule for exposing the oxide and absorption for being formed in atmosphere after deposit with conductive oxide film layer can to greatest extent be removed, so as to improve two contact resistances at interface, the fill factor, curve factor and battery efficiency of heterojunction solar battery are improved.
Embodiment 1
A kind of method of heterojunction solar battery reduction series resistance with reference to shown in Fig. 2：
Step S101, the face stringer intrinsic amorphous silicon layer of n-type silicon chip one after having matte and cleaning and the common 10nm of N-shaped amorphous silicon layer, thin intrinsic amorphous silicon layer and the common 10nm of p-type amorphous silicon layer are deposited in n-type silicon chip another side；
Step S102, above-mentioned silicon chip is put in the magnetron sputtering deposition equipment for being configured with plasma processing chambers, is passed through the 1 of Ar gas and hydrogen：1 gaseous mixture；Stop being passed through Ar gas after the radio-frequency power supply starter of 13.56MHz, control cavity air pressure carries out corona treatment 20sec in 2torr on above-mentioned amorphous silicon layer；
The incoming magnetron sputtering chamber of step S103, silicon chip after plasma processing, transparent conductive oxide ito thin film 100nm, and magnetron sputtering deposition copper metal barrier layer and crystal seed layer 200nm in above-mentioned transparent conductive oxide ITO layer are deposited on thin amorphous silicon layer after treatment；
Step S105, silicon chip is annealed in the blanket of nitrogen after copper grid line is formed by graphical and electrochemical deposition process on above-mentioned magnetron sputtering deposition copper metal barrier layer and crystal seed layer.
Damage of the high energy plasma technique to silicon face passivation effect when the present invention can partly even completely eliminate non-crystalline silicon or including transparent conducting oxide layer deposition.
Embodiment 2
With reference to shown in Fig. 3, a kind of method of heterojunction solar battery reduction series resistance：
Step S101, the face stringer intrinsic amorphous silicon layer of n-type silicon chip one after having matte and cleaning and the common 10nm of N-shaped amorphous silicon layer, thin intrinsic amorphous silicon layer and the common 10nm of p-type amorphous silicon layer are deposited in silicon substrate another side；
Step S102, above-mentioned silicon chip is put in the magnetron sputtering deposition equipment for being configured with plasma processing chambers, is passed through the 1 of Ar gas and hydrogen：1 gaseous mixture, stops being passed through Ar gas after 50 watts of radio-frequency power supply starters of 13.56MHz, and control cavity air pressure carries out plasma in 2torr on above-mentioned amorphous silicon layer.
Claims (6)
1. a kind of method that heterojunction solar battery reduces series resistance, it is characterised in that：Including step such as
Under：
In the face deposition intrinsic amorphous silicon layer of n-type silicon chip one and N-shaped amorphous silicon layer, another side deposition intrinsic
Amorphous silicon layer and p-type amorphous silicon layer；
Transparent conductive oxide film is deposited on amorphous silicon layer surface；
Metal grid lines are formed in transparent conductive oxide film layer surface；
Wherein, methods described is additionally included in surface or the transparent conductive oxide film of deposition of amorphous silicon layers
Surface carries out plasma treatment：Silicon chip is placed in plasma process chamber, after reaction pressure is reached
Plasma is excited using radio-frequency power supply, after plasma exciatiaon, using low power processes process in case
Only to the destruction of amorphous silicon layer or transparent conductive oxide film.
2. a kind of method that heterojunction solar battery reduces series resistance according to claim 1, it is special
Levy and be：The reaction pressure of the plasma treatment is 0.1-10torr.
3. a kind of method that heterojunction solar battery reduces series resistance according to claim 1, it is special
Levy and be：The plasma treatment plasma handling process using hydrogen, helium, argon gas its
One of or mixed gas.
4. a kind of method that heterojunction solar battery reduces series resistance according to claim 1, it is special
Levy and be：The low power processes are processed as energy density in 2mW/cm2-100mW/cm2Between, place
The reason time is 5-120sec.
5. a kind of method that heterojunction solar battery reduces series resistance according to claim 1, it is special
Levy and be：It is 13.56MHz-40MHz that the radio-frequency power supply uses frequency.
6. a kind of method that heterojunction solar battery reduces series resistance according to claim 1, it is special
Levy and be：The metal grid lines be silver grating line or copper grid line, using silk-screen printing, electrochemical deposition,
The method of 3D printing or inkjet printing is realized.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510872214.2A CN106816494A (en) | 2015-12-02 | 2015-12-02 | A kind of method of heterojunction solar battery reduction series resistance |
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| CN201510872214.2A CN106816494A (en) | 2015-12-02 | 2015-12-02 | A kind of method of heterojunction solar battery reduction series resistance |
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| CN106816494A true CN106816494A (en) | 2017-06-09 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389936A (en) * | 2018-04-10 | 2018-08-10 | 苏州太阳井新能源有限公司 | The surface treatment method of TCO conductive materials on a kind of solar cell |
| CN112531045A (en) * | 2020-11-27 | 2021-03-19 | 长沙壹纳光电材料有限公司 | Heterojunction solar cell and application thereof |
| CN114709292A (en) * | 2022-03-29 | 2022-07-05 | 通威太阳能（成都）有限公司 | Solar cell and preparation method thereof |
| CN114823990A (en) * | 2022-04-29 | 2022-07-29 | 苏州迈为科技股份有限公司 | Heterojunction battery efficiency improving method |
| CN115241322A (en) * | 2022-06-22 | 2022-10-25 | 通威太阳能（安徽）有限公司 | Electrode deoxidation method, battery preparation method, battery and electronic product |
| CN115588718A (en) * | 2022-10-21 | 2023-01-10 | 通威太阳能（安徽）有限公司 | Preparation method of solar cell and solar cell |
| CN115588718B (en) * | 2022-10-21 | 2024-05-14 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method thereof |
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| CN115588718A (en) * | 2022-10-21 | 2023-01-10 | 通威太阳能（安徽）有限公司 | Preparation method of solar cell and solar cell |
| CN115588718B (en) * | 2022-10-21 | 2024-05-14 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method thereof |
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Application publication date: 20170609 |