WO2011160819A3 - Method for fabrication of a back side contact solar cell - Google Patents
Method for fabrication of a back side contact solar cell Download PDFInfo
- Publication number
- WO2011160819A3 WO2011160819A3 PCT/EP2011/003066 EP2011003066W WO2011160819A3 WO 2011160819 A3 WO2011160819 A3 WO 2011160819A3 EP 2011003066 W EP2011003066 W EP 2011003066W WO 2011160819 A3 WO2011160819 A3 WO 2011160819A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phosphorous
- back side
- phosphorous diffusion
- diffusion region
- fabrication
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 8
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 7
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000005360 phosphosilicate glass Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Method for fabrication of a back side contact solar cell comprising the steps of simultaneously diffusing a phosphorous dopant on at least part of the front side and at least part of the back side of a crystalline silicon substrate (101), thereby forming a front phosphorous diffusion region (201) and a back phosphorous diffusion region (203) with the same diffusion depth and phosphosilicate glass layers (202, 204) on the front and back phosphorous diffusion regions (201, 203), respectively; forming a first dielectric coating film (305) on at least part of the back side of the substrate; removing at least part of the front-side phosphosilicate glass layer (202); and heating the product thus obtained for a period of time and at a temperature chosen in such a way that said front and back phosphorous diffusion regions (201, 203) expand further into the crystal up to a second diffusion depth that is different for the front phosphorous diffusion region (201A) and the back phosphorous diffusion region (203A), respectively, after the heating.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010024835A DE102010024835A1 (en) | 2010-06-23 | 2010-06-23 | Method for fabrication of a backside contact solar cell |
DE102010024835.5 | 2010-06-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011160819A2 WO2011160819A2 (en) | 2011-12-29 |
WO2011160819A3 true WO2011160819A3 (en) | 2013-03-21 |
Family
ID=44629833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2011/003066 WO2011160819A2 (en) | 2010-06-23 | 2011-06-21 | Method for fabrication of a back side contact solar cell |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102010024835A1 (en) |
WO (1) | WO2011160819A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103606596A (en) * | 2013-11-26 | 2014-02-26 | 英利集团有限公司 | Phosphorus doping silicon wafer, manufacturing method of phosphorus doping silicon wafer, solar cell and manufacturing method of solar cell |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013102573A1 (en) | 2012-03-13 | 2013-09-19 | centrotherm cell & module GmbH | Method for manufacturing solar cell e.g. interdigitated-back contact solar cell, involves cleaning cell substrate, and diffusing boron from boron source layer and diffusing phosphorus into solar cell substrate in common diffusion step |
DE102013102574A1 (en) | 2012-03-13 | 2013-09-19 | centrotherm cell & module GmbH | Method for manufacturing back contact solar cell, involves diffusing second type dopant containing paste into solar cell substrate in common-emitter type impurity regions by sintering second type dopant containing paste |
CN107785456A (en) * | 2017-09-27 | 2018-03-09 | 泰州中来光电科技有限公司 | A kind of preparation method of back contact solar cell |
CN109809699B (en) * | 2019-01-21 | 2021-05-28 | 西北大学 | Phosphorus-doped glass powder, preparation method thereof and method for preparing front silver paste for solar cell by using phosphorus-doped glass powder |
CN113948611B (en) * | 2021-10-15 | 2023-12-01 | 浙江爱旭太阳能科技有限公司 | P-type IBC battery, preparation method thereof, assembly and photovoltaic system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090227095A1 (en) * | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Counterdoping for solar cells |
WO2010049230A2 (en) * | 2008-10-31 | 2010-05-06 | Bosch Solar Energy Ag | Method for producing monocrystalline n-silicon rear contact solar cells |
US20100147378A1 (en) * | 2008-12-15 | 2010-06-17 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6998288B1 (en) | 2003-10-03 | 2006-02-14 | Sunpower Corporation | Use of doped silicon dioxide in the fabrication of solar cells |
DE102008030880A1 (en) | 2007-12-11 | 2009-06-18 | Institut Für Solarenergieforschung Gmbh | Rear contact solar cell with large backside emitter areas and manufacturing method therefor |
-
2010
- 2010-06-23 DE DE102010024835A patent/DE102010024835A1/en not_active Withdrawn
-
2011
- 2011-06-21 WO PCT/EP2011/003066 patent/WO2011160819A2/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090227095A1 (en) * | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Counterdoping for solar cells |
WO2010049230A2 (en) * | 2008-10-31 | 2010-05-06 | Bosch Solar Energy Ag | Method for producing monocrystalline n-silicon rear contact solar cells |
US20100147378A1 (en) * | 2008-12-15 | 2010-06-17 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103606596A (en) * | 2013-11-26 | 2014-02-26 | 英利集团有限公司 | Phosphorus doping silicon wafer, manufacturing method of phosphorus doping silicon wafer, solar cell and manufacturing method of solar cell |
CN103606596B (en) * | 2013-11-26 | 2016-08-17 | 英利集团有限公司 | Phosphorus doping silicon chip, its manufacture method, solar battery sheet and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
DE102010024835A1 (en) | 2011-12-29 |
WO2011160819A2 (en) | 2011-12-29 |
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