CN107768467B - A kind of silica-based solar cell and preparation method thereof - Google Patents
A kind of silica-based solar cell and preparation method thereof Download PDFInfo
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- CN107768467B CN107768467B CN201711249674.5A CN201711249674A CN107768467B CN 107768467 B CN107768467 B CN 107768467B CN 201711249674 A CN201711249674 A CN 201711249674A CN 107768467 B CN107768467 B CN 107768467B
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 238000002360 preparation method Methods 0.000 title claims abstract description 67
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 36
- 229920000144 PEDOT:PSS Polymers 0.000 claims abstract description 128
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 97
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 94
- 239000010703 silicon Substances 0.000 claims abstract description 94
- 238000000137 annealing Methods 0.000 claims description 69
- 238000004528 spin coating Methods 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 239000012298 atmosphere Substances 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 235000019441 ethanol Nutrition 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000004073 vulcanization Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000004140 cleaning Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 83
- 230000015572 biosynthetic process Effects 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 208000037656 Respiratory Sounds Diseases 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000009396 hybridization Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- NWJKPSLXLQLUTC-UHFFFAOYSA-N ethane-1,2-diol;sodium Chemical compound [Na].OCCO NWJKPSLXLQLUTC-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
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- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
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- Life Sciences & Earth Sciences (AREA)
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- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of silica-based solar cells and preparation method thereof, belong to technical field of solar batteries.The preparation method of the silica-based solar cell includes: the cleaning of n-type silicon chip；The surface passivating treatment of n-type silicon chip；First PEDOT:PSS layers of preparation；2nd PEDOT:PSS layers of preparation；3rd PEDOT:PSS layers of preparation；4th PEDOT:PSS layers of preparation；5th PEDOT:PSS layers of preparation；The preparation of front electrode；The preparation of rear electrode.The photoelectric conversion efficiency of the silica-based solar cell is up to 12.4%.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of silica-based solar cell and its preparation side
Method.
Background technique
Silica-based solar cell mainly include single crystal silicon solar cell, amorphous silicon film solar battery, polysilicon membrane too
Positive electricity pond and organic inorganic hybridization solar battery.Wherein the Typical Representative in organic inorganic hybridization solar battery is Si/
PEDOT:PSS hybrid solar cell, in the preparation process of conventional Si/PEDOT:PSS hybrid solar cell, usually
It simple spin coating PEDOT:PSS solution and anneals on a silicon substrate to form PEDOT:PSS layers, and existing method preparation
PEDOT:PSS layers of compactness are poor, and then cause the photoelectric conversion efficiency of Si/PEDOT:PSS hybrid solar cell poor.Such as
The preparation process what designs a kind of novel Si/PEDOT:PSS hybrid solar cell is to improve its photoelectric conversion efficiency
Industry urgent problem to be solved
Summary of the invention
The purpose of the present invention is overcoming above-mentioned the deficiencies in the prior art, a kind of silica-based solar cell and its preparation side are provided
Method.
To achieve the above object, the preparation method of a kind of silica-based solar cell proposed by the present invention, comprising the following steps:
1) n-type silicon chip is cleaned；2) surface passivating treatment is carried out to n-type silicon chip；3) the first PEDOT:PSS layers of preparation: in step
The positive spin coating concentration of rapid 2 obtained n-type silicon chips is the PEDOT:PSS solution of 15-18mg/ml, wherein revolving speed 1500-
It 1900 revs/min, is then made annealing treatment, PEDOT:PSS layers of formation the first；4) the 2nd PEDOT:PSS layers of preparation: in step
The positive spin coating concentration of rapid 3 obtained n-type silicon chips is the PEDOT:PSS solution of 12-14mg/ml, wherein revolving speed 2000-
It 2400 revs/min, is then made annealing treatment, PEDOT:PSS layers of formation the 2nd；5) the 3rd PEDOT:PSS layers of preparation: in step
The positive spin coating concentration of rapid 4 obtained n-type silicon chips is the PEDOT:PSS solution of 9-11mg/ml, wherein revolving speed 3000-3400
Rev/min, it is then made annealing treatment, PEDOT:PSS layers of formation the 3rd；6) the 4th PEDOT:PSS layers of preparation: in step 5
The positive spin coating concentration of obtained n-type silicon chip be 6-8mg/ml PEDOT:PSS solution, wherein revolving speed be 3500-3900 turn/
Minute, it is then made annealing treatment, PEDOT:PSS layers of formation the 4th；7) it the 5th PEDOT:PSS layers of preparation: is obtained in step 6
N-type silicon chip positive spin coating concentration be 3-5mg/ml PEDOT:PSS solution, wherein revolving speed be 4000-4500 revs/min,
Then it is made annealing treatment, PEDOT:PSS layers of formation the 5th；8) front electrode is prepared；9) rear electrode is prepared.
Preferably, the process cleaned to n-type silicon chip includes: by n-type silicon chip successively third in the step 1
Ketone, ethyl alcohol are cleaned by ultrasonic in deionized water, and the silicon oxide layer on the n-type silicon chip surface is then removed using HF solution.
Preferably, including: to obtain step 1 to the process that n-type silicon chip carries out surface passivating treatment in the step 2
To n-type silicon chip immerse vulcanized sodium ethylene glycol solution in, carry out plating vulcanizing treatment, with obtain vulcanization passivation layer.
Preferably, the spin-coating time in the step 3 is 1-2 minutes, the spin-coating time in the step 4 is 2-3 points
Clock, the spin-coating time in the step 5 are 3-4 minute, and the spin-coating time in the step 6 is 4-5 minutes, in the step 7
Spin-coating time be 5-6 minutes.
Preferably, the atmosphere of the annealing in the step 3-6 is nitrogen or argon gas, annealing temperature 110-
120 DEG C, annealing time is 3-5 minutes.
Preferably, the atmosphere of the annealing in the step 7 is nitrogen or argon gas, annealing temperature 110-120
DEG C, annealing time is 10-15 minutes.
Preferably, in the step 8, the process for preparing front electrode include: using vapour deposition method or magnetron sputtering method,
The metal gate electrode with a thickness of 80-150 nanometers, the material of the metal gate electrode are formed in the described 5th PEDOT:PSS layers of front
It is of fine quality to be selected as one of silver, copper, aluminium, titanium, palladium or a variety of.
Preferably, in the step 9, the process for preparing rear electrode include: using vapour deposition method or magnetron sputtering method,
The metal back electrode with a thickness of 100-200 nanometers is formed at the n-type silicon chip back side, the material of the metal back electrode is preferably
One of silver, copper, aluminium, titanium, palladium are a variety of.
The present invention also provides a kind of silica-based solar cell, the silica-based solar cell is to be prepared using the above method
The silica-based solar cell of formation.
Compared with the prior art, the invention has the following advantages:
Single layer PEDOT:PSS is easy to produce crackle in annealing process and then corresponding solar cell photoelectric is caused to be converted
It is inefficient, in the preparation method of silica-based solar cell of the invention, by selecting five spin coating PEDOT:PSS solution, and
It is all made annealing treatment after each spin coating, rear primary spin-coat process can effectively cover first one time PEDOT:PSS layers of annealing
The crackle that processing is formed, while successively being reduced by the concentration of the PEDOT:PSS solution of selection spin coating, the time of spin coating and revolving speed
It successively increases, so that the PEDOT:PSS layer formed is successively thinned, and PEDOT:PSS in rear primary spin-coat process is more held
Easily enter in first one time PEDOT:PSS layer of crackle, and then form the PEDOT:PSS layer of densification, reduces PEDOT:PSS layers
Defect state density improves the stability of heterojunction boundary, improves the efficiency of transmission in hole, and then improve the corresponding silicon substrate sun
Open-circuit voltage, short circuit current and the fill factor of energy battery, and then the photoelectricity for effectively improving silica-based solar cell turns
Efficiency is changed, by optimizing the specific process parameter of each step, so that the photoelectric conversion efficiency of the silica-based solar cell is up to
12.4%.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of silica-based solar cell of the invention.
Specific embodiment
The preparation method for a kind of silica-based solar cell that the present invention specifically proposes, comprising the following steps: 1) to n-type silicon chip
It is cleaned；2) surface passivating treatment is carried out to n-type silicon chip；3) the first PEDOT:PSS layers of preparation: in the N-shaped that step 2 obtains
The positive spin coating concentration of silicon wafer is the PEDOT:PSS solution of 15-18mg/ml, wherein revolving speed is 1500-1900 revs/min, so
After made annealing treatment, form the first PEDOT:PSS layers；4) the 2nd PEDOT:PSS layers of preparation: in the n-type silicon that step 3 obtains
The positive spin coating concentration of piece is the PEDOT:PSS solution of 12-14mg/ml, wherein revolving speed is 2000-2400 revs/min, then
It is made annealing treatment, PEDOT:PSS layers of formation the 2nd；5) the 3rd PEDOT:PSS layers of preparation: in the n-type silicon chip that step 4 obtains
Positive spin coating concentration be 9-11mg/ml PEDOT:PSS solution, wherein revolving speed be 3000-3400 revs/min, then carry out
Annealing, PEDOT:PSS layers of formation the 3rd；6) the 4th PEDOT:PSS layers of preparation: the n-type silicon chip that step 5 obtains just
Spin coating concentration in face is the PEDOT:PSS solution of 6-8mg/ml, wherein revolving speed is 3500-3900 revs/min, is then annealed
Processing, PEDOT:PSS layers of formation the 4th；7) the 5th PEDOT:PSS layers of preparation: in the front rotation for the n-type silicon chip that step 6 obtains
Applying the PEDOT:PSS solution that concentration is 3-5mg/ml, wherein revolving speed is 4000-4500 revs/min, is then made annealing treatment,
Form the 5th PEDOT:PSS layers；8) front electrode is prepared；9) rear electrode is prepared.
Wherein, in the step 1, the process cleaned to n-type silicon chip includes: by n-type silicon chip successively in acetone, second
It is cleaned by ultrasonic in alcohol, deionized water, the silicon oxide layer on the n-type silicon chip surface is then removed using HF solution.Described
It include: that the n-type silicon chip for obtaining step 1 immerses vulcanized sodium to the process that n-type silicon chip carries out surface passivating treatment in step 2
In ethylene glycol solution, plating vulcanizing treatment is carried out, to obtain vulcanization passivation layer.Spin-coating time in the step 3 is 1-2 points
Clock, the spin-coating time in the step 4 are 2-3 minute, and the spin-coating time in the step 5 is 3-4 minutes, in the step 6
Spin-coating time be 4-5 minute, the spin-coating time in the step 7 is 5-6 minutes.Annealing in the step 3-6
Atmosphere be nitrogen or argon gas, annealing temperature be 110-120 DEG C, annealing time be 3-5 minutes.Annealing in the step 7
The atmosphere of processing is nitrogen or argon gas, and annealing temperature is 110-120 DEG C, and annealing time is 10-15 minutes.In the step 8,
The process for preparing front electrode includes: to be formed in the described 5th PEDOT:PSS layers of front thick using vapour deposition method or magnetron sputtering method
Degree is 80-150 nanometer of metal gate electrode, one of material preferably silver, copper, aluminium, titanium, palladium of the metal gate electrode or
It is a variety of.In the step 9, the process for preparing rear electrode includes: using vapour deposition method or magnetron sputtering method, in the n-type silicon
The piece back side is formed with a thickness of 100-200 nanometer of metal back electrode, the material of the metal back electrode preferably silver, copper, aluminium,
One of titanium, palladium are a variety of.
As shown in Figure 1, the silica-based solar cell that the present invention is prepared according to the above method, the silica-based solar cell from
Under supreme rear electrode 9, n-type silicon chip 1, passivation layer 2, the first PEDOT:PSS layer 3, the 2nd PEDOT:PSS layer 4, the 3rd PEDOT:
PSS layer 5, the 4th PEDOT:PSS layer 6, the 5th PEDOT:PSS layer 7 and front electrode 8.
Embodiment 1:
A kind of preparation method of silica-based solar cell, comprising the following steps: 1) n-type silicon chip is cleaned；2) to N-shaped
Silicon wafer carries out surface passivating treatment；3) the first PEDOT:PSS layers of preparation: dense in the positive spin coating for the n-type silicon chip that step 2 obtains
Degree is the PEDOT:PSS solution of 16mg/ml, wherein revolving speed is 1700 revs/min, is then made annealing treatment, and forms first
PEDOT:PSS layers；4) the 2nd PEDOT:PSS layers of preparation: being 13mg/ in the positive spin coating concentration for the n-type silicon chip that step 3 obtains
The PEDOT:PSS solution of ml, wherein revolving speed is 2100 revs/min, is then made annealing treatment, and the 2nd PEDOT:PSS is formed
Layer；5) the 3rd PEDOT:PSS layers of preparation: being 10mg/ml's in the positive spin coating concentration for the n-type silicon chip that step 4 obtains
PEDOT:PSS solution, wherein revolving speed is 3100 revs/min, is then made annealing treatment, PEDOT:PSS layers of formation the 3rd；6)
4th PEDOT:PSS layers of preparation: the PEDOT:PSS for being 7mg/ml in the positive spin coating concentration for the n-type silicon chip that step 5 obtains is molten
Liquid, wherein revolving speed is 3600 revs/min, is then made annealing treatment, PEDOT:PSS layers of formation the 4th；7) the 5th PEDOT:
The preparation of PSS layer: the PEDOT:PSS solution for being 4mg/ml in the positive spin coating concentration for the n-type silicon chip that step 6 obtains, wherein turn
Speed is 4100 revs/min, is then made annealing treatment, PEDOT:PSS layers of formation the 5th；8) front electrode is prepared；9) preparation back
Face electrode.
Wherein, in the step 1, the process cleaned to n-type silicon chip includes: by n-type silicon chip successively in acetone, second
It is cleaned by ultrasonic in alcohol, deionized water, the silicon oxide layer on the n-type silicon chip surface is then removed using HF solution.Described
It include: that the n-type silicon chip for obtaining step 1 immerses vulcanized sodium to the process that n-type silicon chip carries out surface passivating treatment in step 2
In ethylene glycol solution, plating vulcanizing treatment is carried out, to obtain vulcanization passivation layer.Spin-coating time in the step 3 is 1.5 points
Clock, the spin-coating time in the step 4 are 2.5 minutes, and the spin-coating time in the step 5 is 3.5 minutes, in the step 6
Spin-coating time be 4.5 minutes, the spin-coating time in the step 7 is 5.5 minutes.Annealing in the step 3-6
Atmosphere be nitrogen, annealing temperature be 115 DEG C, annealing time be 4 minutes.The atmosphere of annealing in the step 7 is
Nitrogen, annealing temperature are 115 DEG C, and annealing time is 12 minutes.In the step 8, the process for preparing front electrode includes: benefit
With magnetron sputtering method, the metal gate electrode with a thickness of 100 nanometers, the metal are formed in the described 5th PEDOT:PSS layers of front
The material of gate electrode is silver.In the step 9, the process for preparing rear electrode includes: using magnetron sputtering method, in the n
The metal back electrode that type silicon chip back side is formed with a thickness of 150 nanometers, the material of the metal back electrode are aluminium.
Silica-based solar cell prepared by the above method, the multilayer PEDOT:PSS compact structure of this method preparation, the silicon
The open-circuit voltage of based solar battery is 0.59V, short circuit current 29.2mA/cm2, fill factor 0.72, photoelectric conversion effect
Rate is 12.4%.
Embodiment 2
A kind of preparation method of silica-based solar cell, comprising the following steps: 1) n-type silicon chip is cleaned；2) to N-shaped
Silicon wafer carries out surface passivating treatment；3) the first PEDOT:PSS layers of preparation: dense in the positive spin coating for the n-type silicon chip that step 2 obtains
Degree is the PEDOT:PSS solution of 18mg/ml, wherein revolving speed is 1900 revs/min, is then made annealing treatment, and forms first
PEDOT:PSS layers；4) the 2nd PEDOT:PSS layers of preparation: being 14mg/ in the positive spin coating concentration for the n-type silicon chip that step 3 obtains
The PEDOT:PSS solution of ml, wherein revolving speed is 2400 revs/min, is then made annealing treatment, and the 2nd PEDOT:PSS is formed
Layer；5) the 3rd PEDOT:PSS layers of preparation: being 11mg/ml's in the positive spin coating concentration for the n-type silicon chip that step 4 obtains
PEDOT:PSS solution, wherein revolving speed is 3400 revs/min, is then made annealing treatment, PEDOT:PSS layers of formation the 3rd；6)
4th PEDOT:PSS layers of preparation: the PEDOT:PSS for being 8mg/ml in the positive spin coating concentration for the n-type silicon chip that step 5 obtains is molten
Liquid, wherein revolving speed is 3900 revs/min, is then made annealing treatment, PEDOT:PSS layers of formation the 4th；7) the 5th PEDOT:
The preparation of PSS layer: the PEDOT:PSS solution for being 5mg/ml in the positive spin coating concentration for the n-type silicon chip that step 6 obtains, wherein turn
Speed is 4500 revs/min, is then made annealing treatment, PEDOT:PSS layers of formation the 5th；8) front electrode is prepared；9) preparation back
Face electrode.
Wherein, in the step 1, the process cleaned to n-type silicon chip includes: by n-type silicon chip successively in acetone, second
It is cleaned by ultrasonic in alcohol, deionized water, the silicon oxide layer on the n-type silicon chip surface is then removed using HF solution.Described
It include: that the n-type silicon chip for obtaining step 1 immerses vulcanized sodium to the process that n-type silicon chip carries out surface passivating treatment in step 2
In ethylene glycol solution, plating vulcanizing treatment is carried out, to obtain vulcanization passivation layer.Spin-coating time in the step 3 is 2 minutes,
Spin-coating time in the step 4 is 3 minutes, and the spin-coating time in the step 5 is 4 minutes, when spin coating in the step 6
Between be 5 minutes, the spin-coating time in the step 7 is 6 minutes.The atmosphere of annealing in the step 3-6 is nitrogen
Or argon gas, annealing temperature are 120 DEG C, annealing time is 5 minutes.The atmosphere of annealing in the step 7 is argon gas, is moved back
Fiery temperature is 120 DEG C, and annealing time is 15 minutes.In the step 8, the process for preparing front electrode includes: to utilize vapor deposition
Method forms the metal gate electrode with a thickness of 150 nanometers, the material of the metal gate electrode in the described 5th PEDOT:PSS layers of front
Matter is copper.In the step 9, the process for preparing rear electrode includes: to be formed using vapour deposition method at the n-type silicon chip back side
With a thickness of 200 nanometers of metal back electrode, the material of the metal back electrode is aluminium.
Silica-based solar cell prepared by the above method, the multilayer PEDOT:PSS compact structure of this method preparation, the silicon
The open-circuit voltage of based solar battery is 0.57V, short circuit current 28.8mA/cm2, fill factor 0.69, photoelectric conversion effect
Rate is 11.3%.
Embodiment 3
A kind of preparation method of silica-based solar cell, comprising the following steps: 1) n-type silicon chip is cleaned；2) to N-shaped
Silicon wafer carries out surface passivating treatment；3) the first PEDOT:PSS layers of preparation: dense in the positive spin coating for the n-type silicon chip that step 2 obtains
Degree is the PEDOT:PSS solution of 15mg/ml, wherein revolving speed is 1500 revs/min, is then made annealing treatment, and forms first
PEDOT:PSS layers；4) the 2nd PEDOT:PSS layers of preparation: being 12mg/ in the positive spin coating concentration for the n-type silicon chip that step 3 obtains
The PEDOT:PSS solution of ml, wherein revolving speed is 2000 revs/min, is then made annealing treatment, and the 2nd PEDOT:PSS is formed
Layer；5) the 3rd PEDOT:PSS layers of preparation: the PEDOT for being 9mg/ml in the positive spin coating concentration for the n-type silicon chip that step 4 obtains:
PSS solution, wherein revolving speed is 3000 revs/min, is then made annealing treatment, PEDOT:PSS layers of formation the 3rd；6) the 4th
PEDOT:PSS layers of preparation: the PEDOT:PSS solution for being 6mg/ml in the positive spin coating concentration for the n-type silicon chip that step 5 obtains,
Wherein, revolving speed is 3500 revs/min, is then made annealing treatment, PEDOT:PSS layers of formation the 4th；7) the 5th PEDOT:PSS layers
Preparation: the PEDOT:PSS solution for being 3mg/ml in the positive spin coating concentration for the n-type silicon chip that step 6 obtains, wherein revolving speed is
It 4000 revs/min, is then made annealing treatment, PEDOT:PSS layers of formation the 5th；8) front electrode is prepared；9) preparation back side electricity
Pole.
Wherein, in the step 1, the process cleaned to n-type silicon chip includes: by n-type silicon chip successively in acetone, second
It is cleaned by ultrasonic in alcohol, deionized water, the silicon oxide layer on the n-type silicon chip surface is then removed using HF solution.Described
It include: that the n-type silicon chip for obtaining step 1 immerses vulcanized sodium to the process that n-type silicon chip carries out surface passivating treatment in step 2
In ethylene glycol solution, plating vulcanizing treatment is carried out, to obtain vulcanization passivation layer.Spin-coating time in the step 3 is 1 minute,
Spin-coating time in the step 4 is 2 minutes, and the spin-coating time in the step 5 is 3 minutes, when spin coating in the step 6
Between be 4 minutes, the spin-coating time in the step 7 is 5 minutes.The atmosphere of annealing in the step 3-6 is nitrogen,
Annealing temperature is 110 DEG C, and annealing time is 3 minutes.The atmosphere of annealing in the step 7 is nitrogen or argon gas, is moved back
Fiery temperature is 110 DEG C, and annealing time is 10 minutes.In the step 8, the process for preparing front electrode includes: to utilize vapor deposition
Method forms the metal gate electrode with a thickness of 80 nanometers, the material of the metal gate electrode in the described 5th PEDOT:PSS layers of front
For silver.In the step 9, the process for preparing rear electrode includes: to form thickness at the n-type silicon chip back side using vapour deposition method
The metal back electrode that degree is 100 nanometers, the material of the metal back electrode are aluminium.
Silica-based solar cell prepared by the above method, the multilayer PEDOT:PSS compact structure of this method preparation, the silicon
The open-circuit voltage of based solar battery is 0.58V, short circuit current 29.1mA/cm2, fill factor 0.71, photoelectric conversion effect
Rate is 12%.
Comparative example:
In order to protrude silica-based solar cell of the present invention with excellent photoelectric conversion efficiency, as a comparison, a kind of silicon/
The preparation method of PEDOT:PSS solar battery, comprising the following steps: the following steps are included: 1) being cleaned to n-type silicon chip；
2) surface passivating treatment is carried out to n-type silicon chip；3) PEDOT:PSS layers of preparation: in the front rotation for the n-type silicon chip that step 2 obtains
Apply the PEDOT:PSS solution that conductivity is 1000, wherein revolving speed is 2000 revs/min, and spin-coating time is 2 minutes, then in nitrogen
Atmosphere enclose it is interior made annealing treatment, annealing temperature be 115 DEG C, annealing time be 20 minutes, formed PEDOT:PSS layers；4) it prepares
Front electrode；5) rear electrode is prepared.Wherein, in the step 1, the process cleaned to n-type silicon chip includes: by N-shaped
Silicon wafer is successively cleaned by ultrasonic in acetone, ethyl alcohol, deionized water, then removes the n-type silicon chip surface using HF solution
Silicon oxide layer.In the step 2, the process for carrying out surface passivating treatment to n-type silicon chip includes: the N-shaped for obtaining step 1
Silicon wafer immerses in the ethylene glycol solution of vulcanized sodium, carries out plating vulcanizing treatment, to obtain vulcanization passivation layer.In the step 4,
The process for preparing front electrode includes: to be formed using magnetron sputtering method in the front PEDOT:PSS layers of with a thickness of 100 nanometers
Metal gate electrode, the material of the metal gate electrode is silver.In the step 5, the process for preparing rear electrode includes: benefit
With magnetron sputtering method, the metal back electrode with a thickness of 150 nanometers is formed at the n-type silicon chip back side, the metal back electrode
Material is aluminium.
The silicon/PEDOT:PSS solar battery open-circuit voltage is 0.55V, short circuit current 27mA/cm2, fill factor
It is 0.62, photoelectric conversion efficiency 9.2%.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (8)
1. a kind of preparation method of silica-based solar cell, it is characterised in that: the following steps are included:
1) n-type silicon chip is cleaned；
2) surface passivating treatment is carried out to n-type silicon chip；
3) the first PEDOT:PSS layers of preparation: being 15-18mg/ml's in the positive spin coating concentration for the n-type silicon chip that step 2 obtains
PEDOT:PSS solution, wherein revolving speed is 1500-1900 revs/min, is then made annealing treatment, and the first PEDOT:PSS is formed
Layer；
4) the 2nd PEDOT:PSS layers of preparation: being 12-14mg/ml's in the positive spin coating concentration for the n-type silicon chip that step 3 obtains
PEDOT:PSS solution, wherein revolving speed is 2000-2400 revs/min, is then made annealing treatment, and the 2nd PEDOT:PSS is formed
Layer；
5) the 3rd PEDOT:PSS layers of preparation: being 9-11mg/ml's in the positive spin coating concentration for the n-type silicon chip that step 4 obtains
PEDOT:PSS solution, wherein revolving speed is 3000-3400 revs/min, is then made annealing treatment, and the 3rd PEDOT:PSS is formed
Layer；
6) the 4th PEDOT:PSS layers of preparation: being 6-8mg/ml's in the positive spin coating concentration for the n-type silicon chip that step 5 obtains
PEDOT:PSS solution, wherein revolving speed is 3500-3900 revs/min, is then made annealing treatment, and the 4th PEDOT:PSS is formed
Layer；
7) the 5th PEDOT:PSS layers of preparation: being 3-5mg/ml's in the positive spin coating concentration for the n-type silicon chip that step 6 obtains
PEDOT:PSS solution, wherein revolving speed is 4000-4500 revs/min, is then made annealing treatment, and the 5th PEDOT:PSS is formed
Layer；
8) front electrode is prepared；
9) rear electrode is prepared；
Wherein, the spin-coating time in the step 3 is 1-2 minutes, and the spin-coating time in the step 4 is 2-3 minutes, the step
Spin-coating time in rapid 5 is 3-4 minutes, and the spin-coating time in the step 6 is 4-5 minutes, the spin-coating time in the step 7
It is 5-6 minutes.
2. the preparation method of silica-based solar cell according to claim 1, it is characterised in that: right in the step 1
The process that n-type silicon chip is cleaned includes: successively to be cleaned by ultrasonic n-type silicon chip in acetone, ethyl alcohol, deionized water, so
The silicon oxide layer on the n-type silicon chip surface is removed using HF solution afterwards.
3. the preparation method of silica-based solar cell according to claim 1, it is characterised in that: right in the step 2
The process that n-type silicon chip carries out surface passivating treatment includes: that the n-type silicon chip for obtaining step 1 immerses the ethylene glycol solution of vulcanized sodium
In, plating vulcanizing treatment is carried out, to obtain vulcanization passivation layer.
4. the preparation method of silica-based solar cell according to claim 1, it is characterised in that: in the step 3-6
Annealing atmosphere be nitrogen or argon gas, annealing temperature be 110-120 DEG C, annealing time be 3-5 minutes.
5. the preparation method of silica-based solar cell according to claim 4, it is characterised in that: in the step 7
The atmosphere of annealing is nitrogen or argon gas, and annealing temperature is 110-120 DEG C, and annealing time is 10-15 minutes.
6. the preparation method of silica-based solar cell according to claim 1, it is characterised in that: in the step 8, system
The process of standby front electrode includes: to form thickness in the described 5th PEDOT:PSS layers of front using vapour deposition method or magnetron sputtering method
For 80-150 nanometers of metal gate electrode.
7. the preparation method of silica-based solar cell according to claim 1, it is characterised in that: in the step 9, system
The process of standby rear electrode includes: to be formed using vapour deposition method or magnetron sputtering method at the n-type silicon chip back side with a thickness of 100-
200 nanometers of metal back electrode.
8. a kind of silica-based solar cell, which is characterized in that the silica-based solar cell is using any one of claim 1-7
The method prepares the silica-based solar cell to be formed.
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