CN103915346A - 薄膜晶体管及其制作方法与液晶显示面板 - Google Patents
薄膜晶体管及其制作方法与液晶显示面板 Download PDFInfo
- Publication number
- CN103915346A CN103915346A CN201310157160.2A CN201310157160A CN103915346A CN 103915346 A CN103915346 A CN 103915346A CN 201310157160 A CN201310157160 A CN 201310157160A CN 103915346 A CN103915346 A CN 103915346A
- Authority
- CN
- China
- Prior art keywords
- film transistor
- thin
- nitrogen
- grid
- gate insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000004973 liquid crystal related substance Substances 0.000 title abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 27
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 18
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000007769 metal material Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 239000012212 insulator Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 12
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 11
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 150000002829 nitrogen Chemical class 0.000 claims 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 claims 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 3
- 229910007991 Si-N Inorganic materials 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 229910006294 Si—N Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Liquid Crystal (AREA)
Abstract
Description
薄膜晶体管 | 10 |
基板 | 11 |
栅极 | 12 |
栅极绝缘层 | 13 |
半导体层 | 14 |
源极 | 15 |
漏极 | 16 |
步骤 | S201~S205 |
液晶显示面板 | 100 |
扫描线 | 101 |
数据线 | 102 |
像素电极 | 104 |
公共电极 | 105 |
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101150833A TWI479664B (zh) | 2012-12-28 | 2012-12-28 | 薄膜電晶體及其製作方法與液晶顯示面板 |
TW101150833 | 2012-12-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103915346A true CN103915346A (zh) | 2014-07-09 |
CN103915346B CN103915346B (zh) | 2017-02-15 |
Family
ID=51040943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310157160.2A Active CN103915346B (zh) | 2012-12-28 | 2013-04-30 | 薄膜晶体管及其制作方法与液晶显示面板 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103915346B (zh) |
TW (1) | TWI479664B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021179271A1 (zh) * | 2020-03-12 | 2021-09-16 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示面板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6245652B1 (en) * | 1998-09-04 | 2001-06-12 | Advanced Micro Devices, Inc. | Method of forming ultra thin gate dielectric for high performance semiconductor devices |
CN1692480A (zh) * | 2002-01-15 | 2005-11-02 | 东京毅力科创株式会社 | 形成含硅绝缘膜的cvd方法和装置 |
CN101393936A (zh) * | 2008-11-10 | 2009-03-25 | 友达光电股份有限公司 | 下栅极式薄膜晶体管及其制作方法 |
CN102473729A (zh) * | 2009-07-03 | 2012-05-23 | 株式会社半导体能源研究所 | 制造半导体装置的方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102319490B1 (ko) * | 2009-07-10 | 2021-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치의 제작 방법 |
-
2012
- 2012-12-28 TW TW101150833A patent/TWI479664B/zh active
-
2013
- 2013-04-30 CN CN201310157160.2A patent/CN103915346B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6245652B1 (en) * | 1998-09-04 | 2001-06-12 | Advanced Micro Devices, Inc. | Method of forming ultra thin gate dielectric for high performance semiconductor devices |
CN1692480A (zh) * | 2002-01-15 | 2005-11-02 | 东京毅力科创株式会社 | 形成含硅绝缘膜的cvd方法和装置 |
CN101393936A (zh) * | 2008-11-10 | 2009-03-25 | 友达光电股份有限公司 | 下栅极式薄膜晶体管及其制作方法 |
CN102473729A (zh) * | 2009-07-03 | 2012-05-23 | 株式会社半导体能源研究所 | 制造半导体装置的方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021179271A1 (zh) * | 2020-03-12 | 2021-09-16 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示面板 |
Also Published As
Publication number | Publication date |
---|---|
CN103915346B (zh) | 2017-02-15 |
TWI479664B (zh) | 2015-04-01 |
TW201427029A (zh) | 2014-07-01 |
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C06 | Publication | ||
PB01 | Publication | ||
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20161010 Address after: 518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two Applicant after: Hongfujin Precise Industry (Shenzhen) Co., Ltd. Applicant after: Hon Hai Precision Industry Co., Ltd. Address before: Taiwan Hsinchu County Chinese jhubei City, Taiwan 1 yuan a Street No. 7 Building 1 Applicant before: YEXIN TECHNOLOGY CONSULATION CO., LTD. Applicant before: AU OPTRONICS CO., LTD. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant |