CN109148598A - 薄膜晶体管及其制备方法 - Google Patents
薄膜晶体管及其制备方法 Download PDFInfo
- Publication number
- CN109148598A CN109148598A CN201810949812.9A CN201810949812A CN109148598A CN 109148598 A CN109148598 A CN 109148598A CN 201810949812 A CN201810949812 A CN 201810949812A CN 109148598 A CN109148598 A CN 109148598A
- Authority
- CN
- China
- Prior art keywords
- layer
- channel region
- active layer
- film transistor
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 53
- 238000002161 passivation Methods 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 6
- 238000003851 corona treatment Methods 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810949812.9A CN109148598B (zh) | 2018-08-20 | 2018-08-20 | 薄膜晶体管及其制备方法 |
Applications Claiming Priority (1)
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---|---|---|---|
CN201810949812.9A CN109148598B (zh) | 2018-08-20 | 2018-08-20 | 薄膜晶体管及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109148598A true CN109148598A (zh) | 2019-01-04 |
CN109148598B CN109148598B (zh) | 2022-04-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201810949812.9A Active CN109148598B (zh) | 2018-08-20 | 2018-08-20 | 薄膜晶体管及其制备方法 |
Country Status (1)
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CN (1) | CN109148598B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113327989A (zh) * | 2021-05-19 | 2021-08-31 | 厦门天马微电子有限公司 | 薄膜晶体管、阵列基板、显示面板及显示装置 |
CN116314017A (zh) * | 2023-05-18 | 2023-06-23 | 长鑫存储技术有限公司 | 半导体结构及其制造方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11186557A (ja) * | 1997-12-22 | 1999-07-09 | Sharp Corp | 半導体装置及びその製造方法 |
US20020125535A1 (en) * | 2000-12-19 | 2002-09-12 | Tohru Ueda | Thin-film transistor, method for fabricating the same, and liquid crystal display device |
CN101401213A (zh) * | 2006-03-17 | 2009-04-01 | 佳能株式会社 | 使用氧化物膜用于沟道的场效应晶体管及其制造方法 |
CN101626034A (zh) * | 2008-07-08 | 2010-01-13 | 乐金显示有限公司 | 薄膜晶体管及其制造方法 |
US20130207101A1 (en) * | 2012-02-09 | 2013-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN103915508A (zh) * | 2013-01-17 | 2014-07-09 | 上海天马微电子有限公司 | 一种底栅结构的氧化物薄膜晶体管及其制作方法 |
KR20150136363A (ko) * | 2014-05-27 | 2015-12-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 이의 제조 방법 |
CN107195672A (zh) * | 2017-05-27 | 2017-09-22 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其控制方法 |
CN107895726A (zh) * | 2017-11-30 | 2018-04-10 | 武汉天马微电子有限公司 | 一种阵列基板及其制作方法和显示装置 |
CN108054172A (zh) * | 2017-11-30 | 2018-05-18 | 武汉天马微电子有限公司 | 阵列基板及其制作方法和显示装置 |
-
2018
- 2018-08-20 CN CN201810949812.9A patent/CN109148598B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11186557A (ja) * | 1997-12-22 | 1999-07-09 | Sharp Corp | 半導体装置及びその製造方法 |
US20020125535A1 (en) * | 2000-12-19 | 2002-09-12 | Tohru Ueda | Thin-film transistor, method for fabricating the same, and liquid crystal display device |
CN101401213A (zh) * | 2006-03-17 | 2009-04-01 | 佳能株式会社 | 使用氧化物膜用于沟道的场效应晶体管及其制造方法 |
CN101626034A (zh) * | 2008-07-08 | 2010-01-13 | 乐金显示有限公司 | 薄膜晶体管及其制造方法 |
US20130207101A1 (en) * | 2012-02-09 | 2013-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
CN103915508A (zh) * | 2013-01-17 | 2014-07-09 | 上海天马微电子有限公司 | 一种底栅结构的氧化物薄膜晶体管及其制作方法 |
KR20150136363A (ko) * | 2014-05-27 | 2015-12-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 이의 제조 방법 |
CN107195672A (zh) * | 2017-05-27 | 2017-09-22 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其控制方法 |
CN107895726A (zh) * | 2017-11-30 | 2018-04-10 | 武汉天马微电子有限公司 | 一种阵列基板及其制作方法和显示装置 |
CN108054172A (zh) * | 2017-11-30 | 2018-05-18 | 武汉天马微电子有限公司 | 阵列基板及其制作方法和显示装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113327989A (zh) * | 2021-05-19 | 2021-08-31 | 厦门天马微电子有限公司 | 薄膜晶体管、阵列基板、显示面板及显示装置 |
CN113327989B (zh) * | 2021-05-19 | 2022-05-17 | 厦门天马微电子有限公司 | 薄膜晶体管、阵列基板、显示面板及显示装置 |
CN116314017A (zh) * | 2023-05-18 | 2023-06-23 | 长鑫存储技术有限公司 | 半导体结构及其制造方法 |
CN116314017B (zh) * | 2023-05-18 | 2023-10-27 | 长鑫存储技术有限公司 | 半导体结构及其制造方法 |
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CN109148598B (zh) | 2022-04-26 |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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Denomination of invention: Thin film transistors and their preparation methods Effective date of registration: 20231113 Granted publication date: 20220426 Pledgee: Industrial and Commercial Bank of China Limited Shenzhen Guangming Sub branch Pledgor: TCL China Star Optoelectronics Technology Co.,Ltd. Registration number: Y2023980065368 |